CN108129075A - The semiconductor lighting high heat sink material of thermal matching energy - Google Patents
The semiconductor lighting high heat sink material of thermal matching energy Download PDFInfo
- Publication number
- CN108129075A CN108129075A CN201711495657.XA CN201711495657A CN108129075A CN 108129075 A CN108129075 A CN 108129075A CN 201711495657 A CN201711495657 A CN 201711495657A CN 108129075 A CN108129075 A CN 108129075A
- Authority
- CN
- China
- Prior art keywords
- parts
- mixture
- heat sink
- sink material
- semiconductor lighting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B26/00—Compositions of mortars, concrete or artificial stone, containing only organic binders, e.g. polymer or resin concrete
- C04B26/02—Macromolecular compounds
- C04B26/28—Polysaccharides or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/90—Electrical properties
- C04B2111/92—Electrically insulating materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2201/00—Mortars, concrete or artificial stone characterised by specific physical values
- C04B2201/30—Mortars, concrete or artificial stone characterised by specific physical values for heat transfer properties such as thermal insulation values, e.g. R-values
- C04B2201/32—Mortars, concrete or artificial stone characterised by specific physical values for heat transfer properties such as thermal insulation values, e.g. R-values for the thermal conductivity, e.g. K-factors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2201/00—Mortars, concrete or artificial stone characterised by specific physical values
- C04B2201/50—Mortars, concrete or artificial stone characterised by specific physical values for the mechanical strength
Abstract
A kind of semiconductor lighting high heat sink material of thermal matching energy, it is related to technical field of semiconductor illumination, including graphene, boron oxide, schmigel, nickel conducting resinl, barium titanate, sodium chloride, citric acid, chromic anhybride, lamp powder, polyurethane, calcium oxide, diatomite, hydroxyapatite, zirconia sol, rare earth, grape seed extract, dimethyl itaconate, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent.The present invention has good comprehensive performance and good mechanical performance, excellent insulating properties, thermal conductivity and the relatively low coefficient of expansion, thermally matched ability can be effectively improved, the heat sink material that the semiconductor lighting that can be widely applied in semiconductor technology can be high with thermal matching.
Description
Technical field：
The present invention relates to technical field of semiconductor illumination, and in particular to the heat that a kind of semiconductor lighting can be high with thermal matching
Dead-wood material.
Background technology：
Light emitting diode is referred to as LED.It is made of the compound for containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N) etc..Work as electricity
Son with that can give off visible ray during hole-recombination can be used for that light emitting diode is made.It is used as and refers in circuit and instrument
Show lamp or composition word or number display.Gallium arsenide diode glows, gallium phosphide diode green light, two pole of schmigel
Pipe Yellow light-emitting low temperature, gallium nitride diode blue light-emitting.Because chemical property is divided into Organic Light Emitting Diode OLED and inorganic light-emitting diode
LED。
LED product is mainly used in backlight, color screen, three big field of room lighting.Since backlight is that LED is most at this stage
Big application market drove LED industry rapid growth in recent years.Future prohibits selling white in product price decline and the new round whole world
Under the influence of the factors such as vehement lamp climax rise, room lighting, which will substitute backlight, becomes future LED fastest-rising subdivision field.
In addition, in recent years under the driving of the product up-gradation such as small clearance display screen factor, LED product speedup is also constantly promoted, and it is steady to present
The trend of growth.In general, sustainable growth will be presented in following LED aggregate demands.
Heat sink material, which is applied, to be referred in semiconductor lighting in current LED illumination encapsulation, can be generated when being shone due to LED
High heat can use the copper post of high thermal conductivity, heat is made to be oriented to outside packaging body.This LED copper post is just named heat sink.LD also generate compared with
More heats, it is also desirable to be installed on heat sink to help to radiate so as to stabilized operating temperature.And this patent is just to provide one kind and partly leads
The body illumination high heat sink material of thermal matching energy, it is insufficient scarce on thermal matching energy so as to reach current heat sink material
It falls into.
Invention content：
The invention reside in order to overcome above-mentioned technological deficiency, disclose a kind of with good comprehensive performance and good machine
Tool performance, excellent insulating properties, thermal conductivity and the relatively low coefficient of expansion, so as to play better thermally matched effect, and can be with
The semiconductor lighting high heat sink material of thermal matching energy being widely used in semiconductor technology.
A kind of semiconductor lighting high heat sink material of thermal matching energy includes the component of following mass fraction：Graphene
30~40 parts, 4~8 parts of boron oxide, 3~6 parts of schmigel, 2~8 parts of nickel conducting resinl, 0.5~3 part of barium titanate, sodium chloride 3~5
Part, 4~6 parts of citric acid, 10~15 parts of chromic anhybride, 10~20 parts of lamp powder, 5~10 parts of polyurethane, 2~4 parts of calcium oxide, diatomite
2~4 parts, 2~3 parts of hydroxyapatite, 4~6 parts of zirconia sol, 3~5 parts of rare earth, 9~13 parts of grape seed extract, clothing health
3~5 parts of dimethyl phthalate, 5~12 parts of binding agent, 1~2 part of coupling agent, 1~2 part of compatilizer, 0.8~1.4 part of antioxidant, peace
Determine 0.5~2 part of agent.
Further technology, the preferred mass number of above-mentioned heat sink material each component are：32~38 parts of graphene, boron oxide 5
~7 parts, 4~5 parts of schmigel, 3~7 parts of nickel conducting resinl, 1~2 part of barium titanate, 4~5 parts of sodium chloride, 5~6 parts of citric acid, chromic acid
11~14 parts of acid anhydride, 12~18 parts of lamp powder, 6~9 parts of polyurethane, 3~4 parts of calcium oxide, 2~3 parts of diatomite, hydroxyapatite 2~3
Part, bonds 4~5 parts of zirconia sol, 3~4 parts of rare earth, 10~12 parts of grape seed extract, 4~5 parts of dimethyl itaconate
6~10 parts of agent, 1~2 part of coupling agent, 1~2 part of compatilizer, 1~1.3 part of antioxidant, 0.8~1.5 part of stabilization agent.
Further, the best in quality number of above-mentioned heat sink material each component is：35 parts of graphene, boron oxide 6
Part, 5 parts of schmigel, 5 parts of nickel conducting resinl, 1.5 parts of barium titanate, 4.5 parts of sodium chloride, 5 parts of citric acid, 12 parts of chromic anhybride, lamp powder 15
Part, 8 parts of polyurethane, 3 parts of calcium oxide, 2 parts of diatomite, 3 parts of hydroxyapatite, 4 parts of zirconia sol, 4 parts of rare earth, grape pip carry
Take 11 parts of object, 4 parts of dimethyl itaconate, 8 parts of binding agent, 2 parts of coupling agent, 1 part of compatilizer, 1.2 parts of antioxidant, stabilization agent 1
Part.
Diatomite wherein in said components is before use by modification, by the diatomite of 10 mass fractions during processing
It is mixed with the glycerine of 2 mass fractions, then adds in the citric acid of 0.5 mass fraction, 3-8 points are stirred under the conditions of 55 DEG C
Mixture is placed in microwave equipment at the frequency microwave of 55-60GHz by clock, 300 revs/min of mixing speed after stirring
10-15S is managed, after treatment adds in glycerine and is mixed evenly, by above-mentioned modified diatomite when in use
Viscosity can play more preferable, contribute to the combination between diatomite and other ingredients；
Binding agent in said components is prepared from the following components：10-18 parts of bentonite, 1-3 parts of pine tar, hot melt adhesive 1-
5 parts, 0.5-3 parts of phenolic resin, 1-2 parts of sugar-cane juice, 0.5-3 parts of trehalose, 3-5 parts of clear water.
The preparation method of above-mentioned bonding agent is：Pine tar is added in after bentonite is diluted with clear water, enters in mixing plant and stirs
Uniformly, it then adds in hot melt adhesive and is warming up to hot melt adhesive thawing, enter in magnetic stirring equipment and stir evenly, then add in phenolic resin
10-15min is stirred with the rotating speed of 300r/min with trehalose, is eventually adding after sugar-cane juice stirs evenly and is used in microwave equipment
After the frequency processing 5-8S of 65-76GHz both.
In addition conductive silver glue and barium titanate are added in component can promote graphene electric current when conduction to pass through
Property it is more steady, will not cause electric current circulation amplitude change greatly, ensure that conduction stationarity, then carried using grape pip
The thermal matching energy of whole heat sink material after use can be ensured by taking the addition of object, diatomite etc., pass through modified bonding
Agent can cause fitting between heat sink material evenly, to be more bonded effect so as to play, increase the heat after use with this
Matching effect.
In addition a kind of preparation method of heat sink material that can be high with thermal matching the present invention also provides semiconductor lighting：Tool
Body includes the following steps：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into grape seed extract and dilute
Soil is dried to water content≤10% at 50-65 DEG C after impregnating 6-7h, mixture I is made, by mixture I and itaconic acid diformazan
After ester mixed grinding 3-6h, mixture II is made；
(2) by graphene, lamp powder, barium titanate, aluminium nitride, schmigel, boron oxide, nickel conducting resinl, diatomite in microwave work(
Rate is 100-300W, and temperature is 400-600 DEG C, and rotating speed is to stir 3-5h under 100-400r/min, and then gains are done
It is dry, mixture III is made；
(3) it is stirred after mixing rare earth, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent, with 300r/min's
Rotating speed stirring 12-15min thickness stands 1-5min, then enters mixture and 3-5h is refrigerated in low temp freezing appts, mixture is made
Ⅳ；
(4) after mixture II is mixed with mixture III, citric acid, chromic anhybride, polyurethane and calcium oxide are added in, stirring is equal
It is even, it is placed in the environment of temperature is 80-160 DEG C and stands 3-4h, then stir evenly, it is for use that mixture V is made；
(5) enter after stirring evenly mixture IV and mixture V in magnetic stirring equipment and 10- is stirred with 60 DEG C of temperature
15min had both obtained the heat sink material that semiconductor lighting can be high with thermal matching.
Further technology, the mass fraction of the water used in step 1 is hydroxyapatite, zirconia sol and sodium chloride
3-5 times of molten gross mass number；
Further technology is to water content≤10% to the degree of gains drying in the step 2.
Further technology, the refrigerated storage temperature in the step 3 are set as 1-3 DEG C.
Have by semiconductor lighting prepared by the above method high heat sink material of thermal matching energy good comprehensive
Can, wherein impact strength has reached more than 25MPa, and elongation has reached more than 10%, elongation at break reached 210% with
On, thermal conductivity has reached more than 200w/ (mK), and coefficient of thermal expansion has reached 5.0 × 10-6/ DEG C hereinafter, with good machine
Tool performance, excellent insulating properties, thermal conductivity and the relatively low coefficient of expansion, can be extensive so as to play better thermally matched effect
Applied in semiconductor technology diode heat conduction, heat dissipation heat sink material.
Experiment and related data detection, specific test result are grouped to the heat sink material of the above method and technique productions
Statistics is as follows：(during grouping, every group of selection sample number 10 takes every cell mean to be registered after data measured)
The beneficial effects of the invention are as follows：Pass through semiconductor lighting prepared by the above method high heat sink material of thermal matching energy
Material has good comprehensive performance, and wherein impact strength has reached more than 25MPa, and elongation has reached more than 10%, and fracture is stretched
Long rate has reached more than 210%, and thermal conductivity has reached more than 200w/ (mK), and coefficient of thermal expansion has reached 5.0 × 10-6/ DEG C
Hereinafter, with good mechanical performance, excellent insulating properties, thermal conductivity and the relatively low coefficient of expansion, so as to play better heat
Matching effect, the diode heat conduction that can be widely applied in semiconductor technology, the heat sink material to radiate.
Specific embodiment：
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Specific example is closed, the present invention is further explained.
Embodiment 1：
A kind of semiconductor lighting high heat sink material of thermal matching energy includes the component of following mass fraction：Graphene
30 parts, 4 parts of boron oxide, 3 parts of schmigel, 2 parts of nickel conducting resinl, 0.5 part of barium titanate, 3 parts of sodium chloride, 4 parts of citric acid, chromic anhybride 10
Part, 10 parts of lamp powder, 5 parts of polyurethane, 2 parts of calcium oxide, 2 parts of diatomite, 2 parts of hydroxyapatite, 4 parts of zirconia sol, rare earth 3
Part, 9 parts of grape seed extract, 3 parts of dimethyl itaconate, 5 parts of binding agent, 1 part of coupling agent, 1 part of compatilizer, antioxidant 0.8
Part, 0.5 part of stabilization agent.
Wherein diatomite is before use by modification, by the diatomite of 10 mass fractions and 2 mass fractions during processing
Glycerine be mixed, then add in the citric acid of 0.5 mass fraction, stirred 3 minutes under the conditions of 55 DEG C, mixing speed 300
Rev/min, mixture is placed in microwave equipment after stirring and handles 15S with the frequency microwave of 55GHz, after treatment adds
Enter glycerine to be mixed evenly, can play more preferable by the viscosity of above-mentioned modified diatomite when in use, have
Help the combination between diatomite and other ingredients；
Wherein binding agent is prepared from the following components：10 parts of bentonite, 1 part of pine tar, 1 part of hot melt adhesive, phenolic resin 0.5
Part, 1 part of sugar-cane juice, 0.5 part of trehalose, 3 parts of clear water.
A kind of preparation method of the semiconductor lighting high heat sink material of thermal matching energy：Specifically include following steps：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into grape seed extract and dilute
Soil is dried to water content≤10% at 505 DEG C after impregnating 6h, mixture I is made, mixture I is mixed with dimethyl itaconate
After closing grinding 3h, mixture II is made；
(2) by graphene, lamp powder, barium titanate, aluminium nitride, schmigel, boron oxide, nickel conducting resinl, diatomite in microwave work(
Rate is 100W, and temperature is 400 DEG C, and rotating speed is to stir 5h under 100r/min, and then gains are dried, mixture is made
Ⅲ；
(3) it is stirred after mixing rare earth, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent, with 300r/min's
Rotating speed stirring 12min thickness stands 1min, then enters mixture and 5h is refrigerated in low temp freezing appts, mixture IV is made；
(4) after mixture II is mixed with mixture III, citric acid, chromic anhybride, polyurethane and calcium oxide are added in, stirring is equal
It is even, it is placed in the environment of temperature is 160 DEG C and stands 3h, then stir evenly, it is for use that mixture V is made；
(5) enter after stirring evenly mixture IV and mixture V in magnetic stirring equipment and 10- is stirred with 60 DEG C of temperature
15min had both obtained the heat sink material that semiconductor lighting can be high with thermal matching.
The mass fraction of the water used in step 1 is hydroxyapatite, zirconia sol and the molten gross mass part of sodium chloride
Several 3 times；
It is to water content≤10% to the degree of gains drying in step 2；
Refrigerated storage temperature in step 3 is set as 1 DEG C.
Embodiment 2：
A kind of semiconductor lighting high heat sink material of thermal matching energy includes the component of following mass fraction：Graphene
35 parts, 6 parts of boron oxide, 5 parts of schmigel, 5 parts of nickel conducting resinl, 1.5 parts of barium titanate, 4.5 parts of sodium chloride, 5 parts of citric acid, chromic anhybride
12 parts, 15 parts of lamp powder, 8 parts of polyurethane, 3 parts of calcium oxide, 2 parts of diatomite, 3 parts of hydroxyapatite, 4 parts of zirconia sol, rare earth 4
Part, 11 parts of grape seed extract, 4 parts of dimethyl itaconate, 8 parts of binding agent, 2 parts of coupling agent, 1 part of compatilizer, antioxidant 1.2
Part, 1 part of stabilization agent.
Wherein diatomite is before use by modification, by the diatomite of 10 mass fractions and 2 mass fractions during processing
Glycerine be mixed, then add in the citric acid of 0.5 mass fraction, stirred 5 minutes under the conditions of 55 DEG C, mixing speed 300
Rev/min, mixture is placed in microwave equipment after stirring and handles 15S with the frequency microwave of 60GHz, after treatment adds
Enter glycerine to be mixed evenly, can play more preferable by the viscosity of above-mentioned modified diatomite when in use, have
Help the combination between diatomite and other ingredients；
Wherein binding agent is prepared from the following components：15 parts of bentonite, 2 parts of pine tar, 4 parts of hot melt adhesive, phenolic resin 1.5
Part, 1 part of sugar-cane juice, 2 parts of trehalose, 4 parts of clear water.
A kind of preparation method of the semiconductor lighting high heat sink material of thermal matching energy：Specifically include following steps：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into grape seed extract and dilute
Soil is dried to water content≤10% at 60 DEG C after impregnating 6h, mixture I is made, mixture I is mixed with dimethyl itaconate
After grinding 5h, mixture II is made；
(2) by graphene, lamp powder, barium titanate, aluminium nitride, schmigel, boron oxide, nickel conducting resinl, diatomite in microwave work(
Rate is 200W, and temperature is 500 DEG C, and rotating speed is to stir 4h under 250r/min, and then gains are dried, mixture is made
Ⅲ；
(3) it is stirred after mixing rare earth, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent, with 300r/min's
Rotating speed stirring 14min thickness stands 3min, then enters mixture and 4h is refrigerated in low temp freezing appts, mixture IV is made；
(4) after mixture II is mixed with mixture III, citric acid, chromic anhybride, polyurethane and calcium oxide are added in, stirring is equal
It is even, it is placed in the environment of temperature is 100 DEG C and stands 3.5h, then stir evenly, it is for use that mixture V is made；
(5) enter after stirring evenly mixture IV and mixture V in magnetic stirring equipment and stirred with 60 DEG C of temperature
13min had both obtained the heat sink material that semiconductor lighting can be high with thermal matching.
The mass fraction of the water used in step 1 is hydroxyapatite, zirconia sol and the molten gross mass part of sodium chloride
Several 4 times；
It is to water content≤10% to the degree of gains drying in step 2；
Refrigerated storage temperature in step 3 is set as 2 DEG C.
Embodiment 3：
A kind of semiconductor lighting high heat sink material of thermal matching energy includes the component of following mass fraction：Graphene
40 parts, 8 parts of boron oxide, 6 parts of schmigel, 8 parts of nickel conducting resinl, 3 parts of barium titanate, 5 parts of sodium chloride, 6 parts of citric acid, chromic anhybride 15
Part, 20 parts of lamp powder, 10 parts of polyurethane, 4 parts of calcium oxide, 4 parts of diatomite, 3 parts of hydroxyapatite, 6 parts of zirconia sol, rare earth 5
Part, 13 parts of grape seed extract, 5 parts of dimethyl itaconate, 12 parts of binding agent, 2 parts of coupling agent, 2 parts of compatilizer, antioxidant
1.4 parts, 2 parts of stabilization agent.
Wherein diatomite is before use by modification, by the diatomite of 10 mass fractions and 2 mass fractions during processing
Glycerine be mixed, then add in the citric acid of 0.5 mass fraction, stirred 8 minutes under the conditions of 55 DEG C, mixing speed 300
Rev/min, mixture is placed in microwave equipment after stirring and handles 10S with the frequency microwave of 60GHz, after treatment adds
Enter glycerine to be mixed evenly, can play more preferable by the viscosity of above-mentioned modified diatomite when in use, have
Help the combination between diatomite and other ingredients；
Wherein binding agent is prepared from the following components：18 parts of bentonite, 3 parts of pine tar, 5 parts of hot melt adhesive, phenolic resin 3
Part, 2 parts of sugar-cane juice, 3 parts of trehalose, 5 parts of clear water.
A kind of preparation method of the semiconductor lighting high heat sink material of thermal matching energy：Specifically include following steps：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into grape seed extract and dilute
Soil is dried to water content≤10% at 65 DEG C after impregnating 7h, mixture I is made, mixture I is mixed with dimethyl itaconate
After grinding 6h, mixture II is made；
(2) by graphene, lamp powder, barium titanate, aluminium nitride, schmigel, boron oxide, nickel conducting resinl, diatomite in microwave work(
Rate is 300W, and temperature is 600 DEG C, and rotating speed is to stir 3h under 400r/min, and then gains are dried, mixture is made
Ⅲ；
(3) it is stirred after mixing rare earth, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent, with 300r/min's
Rotating speed stirring 15min thickness stands 5min, then enters mixture and 3h is refrigerated in low temp freezing appts, mixture IV is made；
(4) after mixture II is mixed with mixture III, citric acid, chromic anhybride, polyurethane and calcium oxide are added in, stirring is equal
It is even, it is placed in the environment of temperature is 160 DEG C and stands 4h, then stir evenly, it is for use that mixture V is made；
(5) enter after stirring evenly mixture IV and mixture V in magnetic stirring equipment and 10- is stirred with 60 DEG C of temperature
15min had both obtained the heat sink material that semiconductor lighting can be high with thermal matching.
The mass fraction of the water used in step 1 is hydroxyapatite, zirconia sol and the molten gross mass part of sodium chloride
Several 5 times；
It is to water content≤10% to the degree of gains drying in step 2；
Refrigerated storage temperature in step 3 is set as 3 DEG C.
Comparative example：
A kind of effective heat sink material of light-emitting diodes includes the component of following mass fraction：35 parts of graphene, 4 parts of sodium chloride,
5 parts of citric acid, 15 parts of lamp powder, 8 parts of polyurethane, 23 parts of calcium oxide, 2 parts of hydroxyapatite, 4 parts of zirconia sol, 5 parts of rare earth,
3 parts of dimethyl itaconate, 12 parts of binding agent, 1 part of coupling agent, 1 part of compatilizer, 0.5 part of antioxidant.
In addition a kind of preparation method of heat sink material that can be high with thermal matching the present invention also provides semiconductor lighting：Tool
Body includes the following steps：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into rare earth, impregnated after 6h 65
It is dried at DEG C to water content≤10%, mixture I is made, after mixture I and dimethyl itaconate mixed grinding 1h, be made mixed
Close object II；
(2) by graphene, lamp powder, aluminium nitride, rare earth, binding agent, coupling agent, compatilizer, antioxidant in microwave power
For 300W, temperature is 400 DEG C, and rotating speed is to stir 2h under 100r/min, and then gains are dried, mixture III is made；
(3) after mixture II is mixed with mixture III, citric acid, polyurethane and calcium oxide is added in, stirs evenly, is placed in
Temperature stands 3h in the environment of being 50 DEG C, and the effective heat sink material of light-emitting diodes is both obtained after then stirring evenly.
Related data detection is carried out to embodiment 1-3 and comparative example respectively, it is as follows to measure related data：
By the comparison of above-mentioned experimental data it is found that can be high with thermal matching by semiconductor lighting prepared by the above method
Heat sink material there is good comprehensive performance, wherein impact strength has reached more than 25MPa, elongation reached 10% with
On, elongation at break has reached more than 210%, and thermal conductivity has reached more than 200w/ (mK), and coefficient of thermal expansion has reached 5.0
× 10-6/ DEG C hereinafter, with good mechanical performance, excellent insulating properties, thermal conductivity and the relatively low coefficient of expansion, so as to play
Better thermally matched effect, the diode heat conduction that can be widely applied in semiconductor technology, the heat sink material to radiate.
The basic principles, main features and the advantages of the invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (7)
1. the heat sink material that semiconductor lighting can be high with thermal matching, it is characterised in that：Include the component of following mass fraction：Stone
Black 30~40 parts of alkene, 4~8 parts of boron oxide, 3~6 parts of schmigel, 2~8 parts of nickel conducting resinl, 0.5~3 part of barium titanate, sodium chloride 3
~5 parts, 4~6 parts of citric acid, 10~15 parts of chromic anhybride, 10~20 parts of lamp powder, 5~10 parts of polyurethane, 2~4 parts of calcium oxide, silicon
2~4 parts of diatomaceous earth, 2~3 parts of hydroxyapatite, 4~6 parts of zirconia sol, 3~5 parts of rare earth, 9~13 parts of grape seed extract,
3~5 parts of dimethyl itaconate, 5~12 parts of binding agent, 1~2 part of coupling agent, 1~2 part of compatilizer, antioxidant 0.8~1.4
Part, 0.5~2 part of stabilization agent.
2. the heat sink material that semiconductor lighting according to claim 1 can be high with thermal matching, it is characterised in that：Each component
Mass fraction be：32~38 parts of graphene, 5~7 parts of boron oxide, 4~5 parts of schmigel, 3~7 parts of nickel conducting resinl, barium titanate 1
~2 parts, 4~5 parts of sodium chloride, 5~6 parts of citric acid, 11~14 parts of chromic anhybride, 12~18 parts of lamp powder, 6~9 parts of polyurethane, oxidation
3~4 parts of calcium, 2~3 parts of diatomite, 2~3 parts of hydroxyapatite, 4~5 parts of zirconia sol, 3~4 parts of rare earth, grape pip extraction
It is 10~12 parts of object, 4~5 parts of dimethyl itaconate, 6~10 parts of binding agent, 1~2 part of coupling agent, 1~2 part of compatilizer, anti-oxidant
1~1.3 part of agent, 0.8~1.5 part of stabilization agent.
3. the heat sink material that semiconductor lighting according to claim 1 can be high with thermal matching, it is characterised in that：Each component
Mass fraction be：35 parts of graphene, 6 parts of boron oxide, 5 parts of schmigel, 5 parts of nickel conducting resinl, 1.5 parts of barium titanate, sodium chloride 4.5
Part, 5 parts of citric acid, 12 parts of chromic anhybride, 15 parts of lamp powder, 8 parts of polyurethane, 3 parts of calcium oxide, 2 parts of diatomite, 3 parts of hydroxyapatite, two
4 parts of zirconia sol, 4 parts of rare earth, 11 parts of grape seed extract, 4 parts of dimethyl itaconate, 8 parts of binding agent, 2 parts of coupling agent, phase
Hold 1 part of agent, 1.2 parts of antioxidant, 1 part of stabilization agent.
4. the preparation method for the heat sink material that semiconductor lighting can be high with thermal matching：It is characterized in that：Specifically include following step
Suddenly：
(1) hydroxyapatite, zirconia sol, sodium chloride are dissolved in water, then put into grape seed extract and rare earth, leaching
It is dried at 50-65 DEG C to water content≤10% after steeping 6-7h, mixture I is made, mixture I is mixed with dimethyl itaconate
After grinding 3-6h, mixture II is made；
(2) it is in microwave power by graphene, lamp powder, barium titanate, aluminium nitride, schmigel, boron oxide, nickel conducting resinl, diatomite
100-300W, temperature are 400-600 DEG C, and rotating speed is to stir 3-5h under 100-400r/min, and then gains are dried, are made
Obtain mixture III；
(3) it is stirred after mixing rare earth, binding agent, coupling agent, compatilizer, antioxidant, stabilization agent, with the rotating speed of 300r/min
It stirs 12-15min thickness and stands 1-5min, then mixture is entered, 3-5h is refrigerated in low temp freezing appts, mixture IV is made；
(4) after mixture II is mixed with mixture III, citric acid, chromic anhybride, polyurethane and calcium oxide is added in, is stirred evenly,
It is placed in the environment of temperature is 80-160 DEG C and stands 3-4h, then stir evenly, it is for use that mixture V is made；
(5) enter after stirring evenly mixture IV and mixture V in magnetic stirring equipment and 10-15min is stirred with 60 DEG C of temperature
Both the heat sink material that semiconductor lighting can be high with thermal matching had been obtained.
5. the preparation method for the heat sink material that semiconductor lighting according to claim 4 can be high with thermal matching, feature
It is：The mass fraction of the water used in step 1 is hydroxyapatite, zirconia sol and the molten gross mass number of sodium chloride
3-5 times.
6. the preparation method for the heat sink material that semiconductor lighting according to claim 4 can be high with thermal matching, feature
It is：It is to water content≤10% to the degree of gains drying in the step 2.
7. the preparation method for the heat sink material that semiconductor lighting according to claim 4 can be high with thermal matching, feature
It is：Refrigerated storage temperature in the step 3 is set as 1-3 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711495657.XA CN108129075A (en) | 2017-12-31 | 2017-12-31 | The semiconductor lighting high heat sink material of thermal matching energy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711495657.XA CN108129075A (en) | 2017-12-31 | 2017-12-31 | The semiconductor lighting high heat sink material of thermal matching energy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108129075A true CN108129075A (en) | 2018-06-08 |
Family
ID=62394303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711495657.XA Pending CN108129075A (en) | 2017-12-31 | 2017-12-31 | The semiconductor lighting high heat sink material of thermal matching energy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108129075A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115572548A (en) * | 2022-09-28 | 2023-01-06 | 湖南万祺科技有限公司 | High-shear-strength insulating hot melt adhesive film for metal-shell power battery and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102067719A (en) * | 2008-04-22 | 2011-05-18 | 达泰克涂料股份公司 | Thick film high temperature thermoplastic insulated heating element |
| CN105753463A (en) * | 2014-12-17 | 2016-07-13 | 黄更生 | Mixed stone ceramic material |
| CN105957951A (en) * | 2016-07-26 | 2016-09-21 | 黄宇 | Novel heat sink material for semiconductors |
| CN106380814A (en) * | 2016-10-20 | 2017-02-08 | 蒙宇 | High-flame-retardancy computer keyboard composite material |
| CN106548994A (en) * | 2016-10-28 | 2017-03-29 | 乐山凯亚达光电科技有限公司 | A kind of quasiconductor heat sink material |
| US20170102043A1 (en) * | 2015-10-07 | 2017-04-13 | Goodrich Corporation | Composite brake disks with an integrated heat sink, methods for manufacturing the same, and methods for producing encapsulated heat sink material |
| CN106992243A (en) * | 2017-04-27 | 2017-07-28 | 乐山凯亚达光电科技有限公司 | A kind of semiconductor heat sink material |
-
2017
- 2017-12-31 CN CN201711495657.XA patent/CN108129075A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102067719A (en) * | 2008-04-22 | 2011-05-18 | 达泰克涂料股份公司 | Thick film high temperature thermoplastic insulated heating element |
| CN105753463A (en) * | 2014-12-17 | 2016-07-13 | 黄更生 | Mixed stone ceramic material |
| US20170102043A1 (en) * | 2015-10-07 | 2017-04-13 | Goodrich Corporation | Composite brake disks with an integrated heat sink, methods for manufacturing the same, and methods for producing encapsulated heat sink material |
| CN105957951A (en) * | 2016-07-26 | 2016-09-21 | 黄宇 | Novel heat sink material for semiconductors |
| CN106380814A (en) * | 2016-10-20 | 2017-02-08 | 蒙宇 | High-flame-retardancy computer keyboard composite material |
| CN106548994A (en) * | 2016-10-28 | 2017-03-29 | 乐山凯亚达光电科技有限公司 | A kind of quasiconductor heat sink material |
| CN106992243A (en) * | 2017-04-27 | 2017-07-28 | 乐山凯亚达光电科技有限公司 | A kind of semiconductor heat sink material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115572548A (en) * | 2022-09-28 | 2023-01-06 | 湖南万祺科技有限公司 | High-shear-strength insulating hot melt adhesive film for metal-shell power battery and preparation method thereof |
| CN115572548B (en) * | 2022-09-28 | 2023-10-03 | 湖南万祺科技有限公司 | High-shear-strength insulating hot melt adhesive film for metal shell power battery and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gong et al. | Novel synthesis and optical characterization of phosphor-converted WLED employing Ce: YAG-doped glass | |
| Yang et al. | A novel deep red phosphor Ca14Zn6Ga10O35: Mn4+ as color converter for warm W-LEDs: structure and luminescence properties | |
| Chen et al. | Transparent Ce3+: Y3Al5O12 glass ceramic for organic-resin-free white-light-emitting diodes | |
| He et al. | Sm3+-activated gadolinium molybdate: an intense red-emitting phosphor for solid-state lighting based on InGaN LEDs | |
| CN104910828B (en) | Adhesive for LED (light emitting diode), adhesive preparation method and LED lamp | |
| CN104531053B (en) | Solid crystal gel for LED as well as preparation method and application of solid crystal gel | |
| Liu et al. | A route for white LED package using luminescent low-temperature co-fired ceramics | |
| CN1870310A (en) | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste | |
| CN108003558A (en) | A kind of phase-change heat conductive material of low transformation temperature and preparation method thereof | |
| CN103043908A (en) | Novel fluorescent glass and preparation method thereof | |
| CN108129075A (en) | The semiconductor lighting high heat sink material of thermal matching energy | |
| Wang et al. | The study of luminescence properties on Ce: YAG phosphor in glass co-sintered at different temperatures | |
| CN103468264A (en) | Manufacture method of polycrystalline Ce:YAG fluorophor | |
| Deng et al. | Performance enhancement of white LED with TAG-Al2O3: Ce eutectic phosphor by partial Gd ion substitution | |
| CN107446528B (en) | A kind of heat-conducting glue and preparation method thereof | |
| Yan et al. | A novel Mn4+-activated Li3CsGe8O18 red phosphor and cation substitution induced photoluminescence improvement | |
| CN103956637B (en) | High-frequency BSCCO-THz source | |
| CN105957951A (en) | Novel heat sink material for semiconductors | |
| CN104788919A (en) | Heat-conducting electric-insulation flame-retardancy-enhanced PBT (polybutylene terephthalate) plastic and preparation method thereof | |
| Peng et al. | Improving thermal stability of KSrPO4: Tb3+ phosphors prepared by microwave assisted sintering | |
| Du et al. | Discovery of a novel yellow-orange-emitting low oxygen nitride phosphor Lu6. 254Si11N20. 762O0. 238: Ce3+ for white LED | |
| Jung et al. | Enhancement of red emission in aluminum garnet yellow phosphors by Sb3+ substitution for the octahedral site | |
| CN108269906A (en) | The heat sink material of semiconductor lighting good seal performance | |
| CN108822830A (en) | A kind of preparation method and products thereof of rare earth aluminic acid alkali composite red color luminescent material | |
| CN206003824U (en) | The long-range fluorophor of double-decker and remote LED device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180608 |
|
| RJ01 | Rejection of invention patent application after publication |