CN108121378A - Temperature control point overriding intelligent temperature control circuit and method for repairing and regulating - Google Patents
Temperature control point overriding intelligent temperature control circuit and method for repairing and regulating Download PDFInfo
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- CN108121378A CN108121378A CN201611087787.5A CN201611087787A CN108121378A CN 108121378 A CN108121378 A CN 108121378A CN 201611087787 A CN201611087787 A CN 201611087787A CN 108121378 A CN108121378 A CN 108121378A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The present invention relates to the intelligent temperature control circuit that a kind of temperature control point is overriding, including band-gap reference module, for generating bandgap voltage reference and positive temperature coefficient electric current；Temperature control modules, for adjusting the resistance value of internal resistance to trim temperature control point；A kind of method realized temperature control point and trimmed is further included, is comprised the following steps：(1) according to the intelligent temperature control waveform with discreteness, form is made；(2) test temperature keeps 25 DEG C of constant temperature, is closed K1, disconnects K2, tests the voltage value of VREF；(3) according to the voltage value of VREF, by tabling look-up to obtain the target resistance value of setting resistance；(4) K1 is disconnected, is closed the resistance value that K2 adjusts the setting resistance.The circuit and method are employed, trimming fuse by middle survey changes intelligent temperature control point, improves the uniformity of temperature control point between different circuits, improve the discrete sex chromosome mosaicism of temperature control point, and will not reduce into and survey yield, temperature control point can reach 130 DEG C during normal work, be with a wide range of applications.
Description
Technical field
The present invention relates to LED drive circuit technical field more particularly to intelligent temperature control circuit technical fields, in particular to one
Kind temperature control point overriding intelligent temperature control circuit and method for repairing and regulating.
Background technology
It in LED drive circuit, flows through that the electric current of power tube is bigger, is added in the voltage at power tube both ends with input voltage
It raising and raises, the fever of chip can be obvious, and the heat-sinking capability of chip in itself is limited, and the temperature of chip can be raised constantly,
The power excessively high service life that can also reduce LED.It generates heat for chip, intelligent temperature control is common solution method, existing one kind
The intelligent temperature control circuit of linear LED drivings, certain value T is increased in chip temperatureADJWhen, reduce output current, adjust chip
Temperature.But the circuit intelligent temperature control point is influenced greatly, to cause different chip chamber intelligent temperature control point discretenesses big by technological fluctuation.
Have at present regarding to the issue above a kind of way be by into survey when allow chip with fixed one section of a current work
Time, the temperature drift of test chip this period choose the circuit for meeting specification, this method is measured by round-about way
, the temperature of chip is not allowed after a period of time that works, and causes test result inaccurate, and into specification will be unsatisfactory in survey
Circuit card fall, finished product yield can be caused low.
Existing solution 1：Circuit is tested as follows when dispatching from the factory into and surveying, and Drain ends add a DC voltage, sampling electricity
It hinders for RCS, circuit works on power the time as T, test input current variation, and the electric current temperature drift after circuit work a period of time T is being advised
It is non-defective unit to determine scope.The test method is to be worked based on circuit under identical operating current the identical time, the hair of chip
Heat is identical, i.e., chip Wen Sheng is identical after chip operation T time.
The shortcomings that scheme 1, is that the conducting resistance of different chip power pipes can be variant, on chip temperature rise influence compared with
Greatly, after circuit work a period of time T, the Wen Shenghui of circuit is variant, since the electric current temperature drift measured is not in identical temperature difference
Under measure, so the intelligent temperature control point measured by it is inaccurate.
Existing solution 2：During test, test intelligent temperature control point is heated directly to chip.
The shortcomings that scheme 2, is that intelligent temperature control point is generally all disposed within 130 DEG C or so, and test condition does not allow at present, and
Cost is higher.
In conclusion both schemes are all into survey method, yield can be caused relatively low, it is impossible to be trimmed to temperature control point.
The content of the invention
It the shortcomings that the purpose of the present invention is overcoming the above-mentioned prior art, provides one kind and can realize and be effectively improved temperature control
The discrete sex chromosome mosaicism of point, and the overriding intelligent temperature control circuit and method for repairing and regulating of temperature control point for surveying yield will not be reduced into.
To achieve these goals, the overriding intelligent temperature control circuit of temperature control point of the invention and method for repairing and regulating have as follows
It forms：
The overriding intelligent temperature control circuit of the temperature control point, including：
Band-gap reference module, for generating bandgap voltage reference and positive temperature coefficient electric current, the band-gap reference module
Including bandgap voltage reference output terminal and positive temperature coefficient current output terminal；
Temperature control modules, for adjusting the resistance value of internal resistance to trim temperature control point, it is ensured that chip temperature is in safe model
In enclosing, the temperature control modules are defeated with the bandgap voltage reference output terminal and the positive temperature coefficient electric current respectively
Outlet is connected.
It is preferred that the temperature control modules include the test resistance of the voltage value of VREF during for testing 25 DEG C, with
And for trimming the setting resistance of temperature control point, the test resistance and institute according to the voltage value of the VREF measured adjustment resistance value
The setting resistor coupled in parallel stated is connected between the positive temperature coefficient current output terminal and ground terminal.
It is preferred that the band-gap reference module include the first p-type metal-oxide-semiconductor, the second p-type metal-oxide-semiconductor, the 3rd p-type metal-oxide-semiconductor,
4th p-type metal-oxide-semiconductor, first resistor, second resistance, 3rd resistor, the first triode, the second triode and N-type metal-oxide-semiconductor, it is described
The first p-type metal-oxide-semiconductor grid respectively with the draining of the first p-type metal-oxide-semiconductor, the grid of the second p-type metal-oxide-semiconductor,
The collector of first triode, the grid of the 4th p-type metal-oxide-semiconductor are connected with start-up circuit, the first P
The source electrode of type metal-oxide-semiconductor respectively with the source electrode of the second p-type metal-oxide-semiconductor, the source electrode of the 3rd p-type metal-oxide-semiconductor and described
The source electrode of 4th p-type metal-oxide-semiconductor is connected and meets VCC, and the drain electrode of the 4th p-type metal-oxide-semiconductor and the positive temperature coefficient are electric
Stream output terminal is connected, the drain electrode of the second p-type metal-oxide-semiconductor respectively with the collector of second triode and described
The grid of N-type metal-oxide-semiconductor is connected, the 3rd p-type metal-oxide-semiconductor drain electrode respectively with the grid of the 3rd p-type metal-oxide-semiconductor and
The drain electrode of the N-type metal-oxide-semiconductor is connected, the source electrode of the N-type metal-oxide-semiconductor respectively with the base stage of first triode,
The base stage of second triode is connected with the bandgap voltage reference output terminal, the transmitting of first triode
Pole is connected with the first end of the first resistor, the second end of the first resistor respectively with the second resistance
First end is connected with the emitter of second triode, the second end of the second resistance and the 3rd resistor
First end be connected, the second end of 3rd resistor ground connection.
It is preferred that the temperature control modules include the 4th resistance, the 5th resistance, the 6th resistance, test resistance, setting
Resistance, the 9th resistance, the first telegraph key, the second telegraph key and third transistor, the second end of the test resistance respectively with it is described
The second end of setting resistance, the emitter of the third transistor, the second end of the 6th resistance be connected and connect
Ground, the first end of the test resistance are connected with the second end of first telegraph key, and the first of the setting resistance
End is connected with the second end of second telegraph key, the first end of first telegraph key respectively with second telegraph key
First end, the second end of the 9th resistance are connected with the base stage of the third transistor, the 9th resistance
First end is connected with the positive temperature coefficient current output terminal, the collector of the third transistor respectively with it is described
The second end of 4th resistance is connected with the first end of the 5th resistance, the first end of the 4th resistance with it is described
Bandgap voltage reference output terminal is connected, and the second end of the 5th resistance is connected with the first end of the 6th resistance
And meet VREF.
More preferably, it is described to set resistance as two-way adjustable resistance.
A kind of method trimmed by foregoing circuit realization temperature control point is further included, is comprised the following steps：
(1) according to the intelligent temperature control waveform with discreteness, form is made；
(2) test temperature keeps 25 DEG C of constant temperature, is closed the first telegraph key, disconnects the second telegraph key, tests the voltage value of VREF；
(3) according to the voltage value of the VREF, the target resistance value of setting resistance is obtained by searching the form；
(4) the first telegraph key is disconnected, is closed the second telegraph key, and adjusts the resistance value of the setting resistance.
It is preferred that the step (1) is further comprising the steps of：
(1-1) determines each voltage value at 25 DEG C in the intelligent temperature control oscillogram with discreteness；
Voltage value (1-2) adjacent to size is averaged；
(1-3) determines multiple sections according to obtained multiple average values, and each section corresponds to the target of a setting resistance
Resistance value.
It is preferred that the resistance value of the setting resistance described in the adjusting, is specially：
According to checking result, trimmed by scorification silk by resistance is set to desired value.
Temperature control point in the invention overriding intelligent temperature control circuit and method for repairing and regulating are employed, by being surveyed at 25 DEG C of room temperature
Examination value can be evaluated whether the size of the off-center value of actual intelligent temperature control point, then setting resistance trimmed that test method is more accurate；
The fuse that setting resistance is trimmed by middle survey changes intelligent temperature control point, improves the uniformity of intelligent temperature control point between different circuits, has
Effect improves the discrete sex chromosome mosaicism of temperature control point, and will not reduce into and survey yield, and temperature control point can reach 130 DEG C during normal work, tool
Be widely used scope.
Description of the drawings
Fig. 1 is the electrical block diagram of the overriding intelligent temperature control circuit of the temperature control point of the present invention.
Fig. 2 is the intelligent temperature control waveform diagram of the discreteness for the method that the realization temperature control point of the present invention trims.
Specific embodiment
In order to more clearly describe the technology contents of the present invention, carried out with reference to specific embodiment further
Description.
The overriding intelligent temperature control circuit of the temperature control point, including：
Band-gap reference module, for generating bandgap voltage reference and positive temperature coefficient electric current, the band-gap reference module
Including bandgap voltage reference output terminal and positive temperature coefficient current output terminal；
Temperature control modules, for adjusting the resistance value of internal resistance to trim temperature control point, it is ensured that chip temperature is in safe model
In enclosing, the temperature control modules are defeated with the bandgap voltage reference output terminal and the positive temperature coefficient electric current respectively
Outlet is connected.
In a kind of preferable embodiment, the temperature control modules include the voltage of VREF during for testing 25 DEG C
The test resistance of value and for trimming the setting resistance of temperature control point, institute according to the voltage value of the VREF that measures adjustment resistance value
The test resistance and the setting resistor coupled in parallel stated are connected between the positive temperature coefficient current output terminal and ground terminal.
In a kind of preferable embodiment, the band-gap reference module includes the first p-type metal-oxide-semiconductor P1, the second p-type
Metal-oxide-semiconductor P2, the 3rd p-type metal-oxide-semiconductor P3, the 4th p-type metal-oxide-semiconductor P4, first resistor R1, second resistance R2,3rd resistor R3, the one or three
Pole pipe Q1, the second triode Q2 and N-type metal-oxide-semiconductor N1, the grid of the first p-type metal-oxide-semiconductor respectively with first p-type
The draining of metal-oxide-semiconductor, the collector of the grid of the second p-type metal-oxide-semiconductor, first triode, the 4th p-type
The grid of metal-oxide-semiconductor is connected with start-up circuit, the source electrode of the first p-type metal-oxide-semiconductor respectively with the second p-type metal-oxide-semiconductor
Source electrode, the source electrode of the 3rd p-type metal-oxide-semiconductor be connected with the source electrode of the 4th p-type metal-oxide-semiconductor and meet VCC, it is described
The drain electrode of 4th p-type metal-oxide-semiconductor is connected with the positive temperature coefficient current output terminal, the drain electrode of the second p-type metal-oxide-semiconductor
The grid with the collector of second triode and the N-type metal-oxide-semiconductor is connected respectively, the 3rd p-type metal-oxide-semiconductor
Drain electrode of the drain electrode respectively with the grid and the N-type metal-oxide-semiconductor of the 3rd p-type metal-oxide-semiconductor be connected, the N-type MOS
The source electrode of pipe is electric with the base stage of first triode, the base stage of second triode and the band-gap reference respectively
Pressure output terminal is connected, and the emitter of first triode is connected with the first end of the first resistor, described
Emitter of the second end of first resistor respectively with the first end of the second resistance and second triode is connected,
The second end of the second resistance is connected with the first end of the 3rd resistor, the second termination of the 3rd resistor
Ground.
In a kind of preferable embodiment, the temperature control modules include the 4th resistance R4, the 5th resistance R5, the
Six resistance R6, test resistance R7, setting resistance R8, the 9th resistance R9, the first telegraph key K1, the second telegraph key K2 and third transistor
Q3, the second end transmitting with the second end, the third transistor of the setting resistance respectively of the test resistance
Pole, the second end of the 6th resistance are connected and are grounded, the first end of the test resistance and first telegraph key
Second end be connected, the first end of the setting resistance is connected with the second end of second telegraph key, described
The first end of one telegraph key respectively with the first end of second telegraph key, the second end and the described the 3rd of the 9th resistance
The base stage of triode is connected, and the first end of the 9th resistance is connected with the positive temperature coefficient current output terminal,
The collector of the third transistor respectively with the second end of the 4th resistance and the first end of the 5th resistance
It is connected, the first end of the 4th resistance is connected with the bandgap voltage reference output terminal, the 5th resistance
Second end be connected with the first end of the 6th resistance and meet VREF.
In a kind of more preferably embodiment, described sets resistance as two-way adjustable resistance.
A kind of method trimmed by foregoing circuit realization temperature control point is further included, is comprised the following steps：
(1) according to the intelligent temperature control waveform with discreteness, form is made；
(2) test temperature keeps 25 DEG C of constant temperature, is closed the first telegraph key, disconnects the second telegraph key, tests the voltage value of VREF；
(3) according to the voltage value of the VREF, the target resistance value of setting resistance is obtained by searching the form；
(4) the first telegraph key is disconnected, is closed the second telegraph key, and adjusts the resistance value of the setting resistance.
In a kind of preferable embodiment, the step (1) is further comprising the steps of：
(1-1) determines each voltage value at 25 DEG C in the intelligent temperature control oscillogram with discreteness；
Voltage value (1-2) adjacent to size is averaged；
(1-3) determines multiple sections according to obtained multiple average values, and each section corresponds to the target of a setting resistance
Resistance value.
In a kind of preferable embodiment, the resistance value of the setting resistance described in the adjusting is specially：
According to checking result, trimmed by scorification silk by resistance is set to desired value.
The circuit structure of the present invention is as shown in Figure 1, wherein, VBG is a fixed nearly zero-temperature coefficient voltage, flows through electricity
The electric current of resistance R9 is that positive temperature coefficient (PTAT) electric current, K1 and K2 switch for two, sets resistance R8 as that can pass through fuse
The resistance trimmed.PTAT current flows through test resistance R7 or R8, as temperature rise Q3 base voltages raise, while VBE_Q3
Reduce, Q3 is turned on when reaching certain temperature value, and electric current gradually increases, and the electric current got from R4 is raised with temperature, flows through R6
Electric current be gradually reduced, VREF voltages with temperature rise continuously decrease.When PTAT current flows only through R7, the center of intelligent temperature control point
Value is at 25 DEG C or so, and when PTAT current flows only through R8, the central value of intelligent temperature control point is at 130 DEG C or so, R7=k × R8 (k>1),
R7 and R8 is composed in parallel by equal proportion resistance string.
During middle survey, the first step, test temperature keeps 25 DEG C of constant temperature, and K1 is closed, and K2 is opened, and PTAT current flows only through R7, this
When test VREF voltage value；Second step, the voltage value tested according to the first step table look-up and calculate R8 values, by scorification silk by R8
It trims as desired value.
A kind of specific embodiment is as follows：
Set resistance R8 (can trim rear)=R8 (before trimming) ± m × R to big and small bidirectional modulation, R8, and the value of m can use
It is the unit resistance set according to actual needs for 1,2,3, R, the value of R is smaller, and degree of regulation is higher, has the intelligence of discreteness
For temperature control waveform as shown in Fig. 2, the voltage value of VREF is 0.9V when being introduced into intelligent temperature control, VREF varies with temperature curve difference,
At 25 degrees Celsius, 1~curve of curve, 7 corresponding VREF values are VREF1~VREF7, First step K1 is closed during middle survey, and K2 is disconnected, 25 DEG C of tests of steady temperature
VREF, second step K1 are disconnected, and K2 is closed, and according to table one scorification silk are selected to trim R8.
Table 1
In the technical solution of the overriding intelligent temperature control circuit of temperature control point of the invention and method for repairing and regulating, wherein included
Each function device and modular device can correspond to actual particular hardware circuit structure, therefore these modules and unit are only
Using hardware circuit it is achieved that need not aid in realizing corresponding function automatically with specific control software.
Temperature control point in the invention overriding intelligent temperature control circuit and method for repairing and regulating are employed, by being surveyed at 25 DEG C of room temperature
Examination value, can be evaluated whether the size of the off-center value of actual intelligent temperature control point, then resistance is trimmed, and test method is more accurate；Pass through
Middle survey trims fuse and changes intelligent temperature control point, improves the uniformity of intelligent temperature control point between different circuits, is effectively improved temperature control point
Discrete sex chromosome mosaicism, and will not reduce into and survey yield, temperature control point can reach 130 DEG C during normal work, have a wide range of applications model
It encloses.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that it can still make
Various modifications and alterations are without departing from the spirit and scope of the present invention.Therefore, specification and drawings should be considered as illustrative
And not restrictive.
Claims (8)
1. the overriding intelligent temperature control circuit of a kind of temperature control point, which is characterized in that the circuit includes：
Band-gap reference module, for generating bandgap voltage reference and positive temperature coefficient electric current, the band-gap reference module includes
Bandgap voltage reference output terminal and positive temperature coefficient current output terminal；
Temperature control modules, for adjusting the resistance value of internal resistance to trim temperature control point, it is ensured that chip temperature in safe range,
The temperature control modules respectively with the bandgap voltage reference output terminal and the positive temperature coefficient current output terminal
It is connected.
2. the overriding intelligent temperature control circuit of temperature control point according to claim 1, which is characterized in that the temperature control
The voltage value tune of the test resistance of the voltage value of VREF and the VREF measured for basis when module is included for testing 25 DEG C
Whole resistance value to trim the setting resistance of temperature control point, the test resistance and the setting resistor coupled in parallel be connected to it is described just
Between temperature coefficient current output terminal and ground terminal.
3. the overriding intelligent temperature control circuit of temperature control point according to claim 1, which is characterized in that the band-gap reference
Module includes the first p-type metal-oxide-semiconductor, the second p-type metal-oxide-semiconductor, the 3rd p-type metal-oxide-semiconductor, the 4th p-type metal-oxide-semiconductor, first resistor, the second electricity
Resistance, 3rd resistor, the first triode, the second triode and N-type metal-oxide-semiconductor, the grid of the first p-type metal-oxide-semiconductor respectively with institute
It is the draining of the first p-type metal-oxide-semiconductor stated, the collector of the grid of the second p-type metal-oxide-semiconductor, first triode, described
The grid of the 4th p-type metal-oxide-semiconductor be connected with start-up circuit, the source electrode of the first p-type metal-oxide-semiconductor is respectively with described second
The source electrode of p-type metal-oxide-semiconductor, the source electrode of the 3rd p-type metal-oxide-semiconductor are connected and connect with the source electrode of the 4th p-type metal-oxide-semiconductor
VCC, the drain electrode of the 4th p-type metal-oxide-semiconductor are connected with the positive temperature coefficient current output terminal, second p-type
Grid of the drain electrode of metal-oxide-semiconductor respectively with the collector of second triode and the N-type metal-oxide-semiconductor is connected, described
Drain electrode of the drain electrode of 3rd p-type metal-oxide-semiconductor respectively with the grid and the N-type metal-oxide-semiconductor of the 3rd p-type metal-oxide-semiconductor is connected,
The source electrode of the N-type metal-oxide-semiconductor respectively with the base stage of first triode, the base stage of second triode and described
Bandgap voltage reference output terminal be connected, the emitter of first triode and the first end phase of the first resistor
Connection, the second end of the first resistor respectively with the first end of the second resistance and the hair of second triode
Emitter-base bandgap grading is connected, and the second end of the second resistance is connected with the first end of the 3rd resistor, the described the 3rd electricity
The second end ground connection of resistance.
4. the overriding intelligent temperature control circuit of temperature control point according to claim 2, which is characterized in that the temperature control
Module includes the 4th resistance, the 5th resistance, the 6th resistance, test resistance, setting resistance, the 9th resistance, the first telegraph key, the second electricity
Key and third transistor, the second end of the test resistance respectively with the second end of the setting resistance, the described the 3rd
The emitter of triode, the second end of the 6th resistance are connected and are grounded, the first end of the test resistance and institute
The second end for the first telegraph key stated is connected, and the first end of the setting resistance is connected with the second end of second telegraph key
Connect, the first end of first telegraph key respectively with the first end of second telegraph key, the second end of the 9th resistance
It is connected with the base stage of the third transistor, the first end of the 9th resistance and the positive temperature coefficient electric current are defeated
Outlet is connected, and the collector of the third transistor is electric with the second end of the 4th resistance and the described the 5th respectively
The first end of resistance is connected, and the first end of the 4th resistance is connected with the bandgap voltage reference output terminal, described
The second end of the 5th resistance be connected with the first end of the 6th resistance and meet VREF.
5. the overriding intelligent temperature control circuit of temperature control point according to claim 4, which is characterized in that the setting resistance
For two-way adjustable resistance.
A kind of 6. method trimmed by circuit described in claim 1 realization temperature control point, which is characterized in that the method bag
Include following steps：
(1) according to the intelligent temperature control waveform with discreteness, form is made；
(2) test temperature keeps 25 DEG C of constant temperature, is closed the first telegraph key, disconnects the second telegraph key, tests the voltage value of VREF；
(3) according to the voltage value of the VREF, the target resistance value of setting resistance is obtained by searching the form；
(4) the first telegraph key is disconnected, is closed the second telegraph key, and adjusts the resistance value of the setting resistance.
7. the method according to claim 6 realized temperature control point and trimmed, which is characterized in that the step (1) further includes
Following steps：
(1-1) determines each voltage value at 25 DEG C in the intelligent temperature control oscillogram with discreteness；
Voltage value (1-2) adjacent to size is averaged；
(1-3) determines multiple sections according to obtained multiple average values, and each section corresponds to the target resistance value of a setting resistance.
8. the method according to claim 6 realized temperature control point and trimmed, which is characterized in that the adjusting institute described in step (4)
The resistance value for the setting resistance stated, specially：
According to checking result, trimmed by scorification silk by resistance is set to desired value.
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| CN201611087787.5A CN108121378B (en) | 2016-11-30 | 2016-11-30 | Intelligent temperature control circuit with temperature control point capable of being adjusted and adjustment method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113465783A (en) * | 2020-03-31 | 2021-10-01 | 圣邦微电子（北京）股份有限公司 | Intercept trimming method for linear analog output of temperature sensor |
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| CN102323842A (en) * | 2011-05-13 | 2012-01-18 | 电子科技大学 | Band-gap voltage reference source for high-order temperature compensation |
| CN103383585A (en) * | 2013-07-10 | 2013-11-06 | 电子科技大学 | Wide input range and ultra low temperature drift band gap reference voltage source |
| CN105739589A (en) * | 2016-05-11 | 2016-07-06 | 成都信息工程大学 | Temperature coefficient automatic tuning method for reference circuit |
| CN106020318A (en) * | 2016-07-28 | 2016-10-12 | 北方电子研究院安徽有限公司 | High-accuracy low-temperature-drift bandgap reference voltage source |
| CN206270779U (en) * | 2016-11-30 | 2017-06-20 | 无锡华润矽科微电子有限公司 | The overriding intelligent temperature control circuit of temperature control point |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113465783A (en) * | 2020-03-31 | 2021-10-01 | 圣邦微电子（北京）股份有限公司 | Intercept trimming method for linear analog output of temperature sensor |
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