CN108121179A - 一种调焦调平装置 - Google Patents

一种调焦调平装置 Download PDF

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CN108121179A
CN108121179A CN201611089618.5A CN201611089618A CN108121179A CN 108121179 A CN108121179 A CN 108121179A CN 201611089618 A CN201611089618 A CN 201611089618A CN 108121179 A CN108121179 A CN 108121179A
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substrate surface
leveling device
light beam
group
focusing leveling
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蓝科
王诗华
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to CN201611089618.5A priority Critical patent/CN108121179A/zh
Priority to KR1020197017503A priority patent/KR102246791B1/ko
Priority to PCT/CN2017/113118 priority patent/WO2018099348A1/zh
Priority to JP2019528720A priority patent/JP6810801B2/ja
Priority to US16/465,354 priority patent/US10809059B2/en
Priority to EP17875619.3A priority patent/EP3550365A4/en
Priority to TW106141801A priority patent/TWI658289B/zh
Publication of CN108121179A publication Critical patent/CN108121179A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70641Focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00Measuring inclination, e.g. by clinometers, by levels
    • G01C9/02Details
    • G01C9/06Electric or photoelectric indication or reading means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034Leveling
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Automatic Focus Adjustment (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本发明公开了一种调焦调平装置,包括依次设置在光束传播方向上的照明单元、带投影狭缝标记的投影标记板、投影成像组、折光棱镜、分光镜、探测单元及信号处理单元,所述照明单元产生的光束经所述投影标记板后形成测量光斑,所述投影成像组将所述测量光斑成像至基底表面,所述分光镜用于将经所述基底表面第二次反射的光束折转至所述探测单元,所述信号处理单元根据所述探测单元测得的探测光斑计算所述基底表面的离焦倾斜量。所述调焦调平装置中的各个机构均集中在基底的同一侧,节省了结构空间;另外,所述调焦调平装置使光束两次经过基底表面,导致基底的离焦、倾斜对探测光斑成像位置的影响加倍,探测精度加倍。

Description

一种调焦调平装置
技术领域
本发明涉及一种调焦调平装置。
背景技术
请参见图1,一种目前常用的调焦调平装置,按照光线传播的方向依次设有投影标记板1、投影前组2、投影后组3、硅片4、探测前组5、探测后组6和探测标记板7,其中投影标记板1、投影前组2、投影后组3、硅片4形成4F系统,硅片4、探测前组5、探测后组6、探测标记板7也形成4F系统。照明单元发出的光把投影标记板1上的标记,通过投影前组2、投影后组3,在硅片4上形成光斑;所述光斑在硅片4反射后,经过探测前组5、探测后组6,通过探测标记板7成像。
请参见图1和图2,投影标记板1、探测标记板7均为漏光的狭缝,当硅片4位于理想0位面(图2中虚线表示0位面)时,投影狭缝在探测标记板7上所成像的中心刚好与探测标记板7自身的狭缝重合。当硅片4离焦、倾斜时,投影狭缝在探测标记板7上所成像的中心会漂移,如图2所示,当硅片4离焦h时,经几何计算,探测支路光轴的偏移Δ为:
其中,α为光束与硅片面的夹角。
硅片4离焦导致透过探测狭缝的光能量会减小。通过透过探测狭缝的光能量变化,可监测硅片离焦、倾斜状况。
目前的调焦调平装置,在硅片的左、右侧分别有投影、探测两个4F系统。结构复杂,且占用空间大,成本高,装调难度大。
发明内容
本发明提供了一种调焦调平装置,用以解决目前的调焦调平装置结构复杂,且占用空间大,成本高,装调难度大的问题。
为了解决上述技术问题,本发明的技术方案是:
一种调焦调平装置,包括依次设置在光束传播方向上的照明单元、带投影狭缝标记的投影标记板、投影成像组、折光棱镜、分光镜、探测单元及信号处理单元,所述照明单元产生的光束经所述投影标记板后形成测量光斑,所述投影成像组将所述测量光斑成像至基底表面,所述折光棱镜用于将经所述基底表面第一次反射的光束折转后再次入射至所述基底表面,所述分光镜用于将经所述基底表面第二次反射的光束折转至所述探测单元,所述信号处理单元根据所述探测单元测得的探测光斑计算所述基底表面的离焦倾斜量。
作为优选,所述折光棱镜的横截面为等腰直角三角形。
作为优选,所述折光棱镜的斜面垂直于经所述基底表面第一次反射的光束的光轴,且两直角面的交线棱位于经所述基底表面第一次反射的光束的光轴上。
作为优选,所述等腰直角三角形的角度分别为45度、90度、45度。
作为优选,所述投影成像组包括前透镜组和后透镜组,所述测量光斑经所述分光镜透射后依次入射至所述前透镜组、后透镜组及所述基底表面,经所述基底表面第二次反射的光束沿原路返回,并经所述分光镜反射至所述探测单元。
作为优选,所述投影成像组包括前透镜组、双反射镜组及后透镜组,所述测量光斑依次入射至所述前透镜组和双反射镜组,之后经所述分光镜透射后依次入射至所述后透镜组及所述基底表面,经所述基底表面第二次反射的光束再次入射至所述后透镜组后被所述分光镜反射至所述探测单元。
作为优选,所述调焦调平装置还包括探测镜组,所述探测镜组沿光束传播方向设置在所述分光镜和所述探测单元之间。
作为优选,所述探测单元包括带探测狭缝标记的探测标记板和光能量探测器,所述光能量探测器用于探测透过所述探测狭缝标记的光能量变化。
本发明所述调焦调平装置采用折光棱镜将投影4F系统和探测4F系统集中在基底的同一侧,节省了所述调焦调平装置占用的空间,使布局更加紧凑;同时所述调焦调平装置复用投影4F系统,省去了探测支路4F系统,结构简单,方便装调,降低了生产成本。另一方面,本方案光束两次经过基底表面,导致基底的离焦、倾斜对探测光斑成像位置的影响加倍,即在相同的探测技术能力条件下,探测精度加倍。
附图说明
图1是现有技术中一种调焦调平装置的结构示意图;
图2是现有技术中一种调焦调平装置的硅片面离焦时的光路图;
图3是本发明实施例一的调焦调平装置的结构示意图;
图4是本发明实施例一的调焦调平装置的基底离焦时的光路图;
图5是本发明实施例一的调焦调平装置的折光棱镜安装存在误差时的光路图;
图6是本发明实施例二的调焦调平装置的结构示意图。
图1~2中所示:1-投影标记板、2-投影前组、3-投影后组、4-硅片、5-探测前组、6-探测后组、7-探测标记板;
图3~6中所示:10-投影标记板、20-投影成像组、21-前透镜组、22-后透镜组、23-双反射镜组、30-折光棱镜、40-分光镜、50-探测标记板、60-基底、70-探测镜组。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。需说明的是,本发明附图均采用简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
实施例一
请参见图3,一种调焦调平装置,包括依次设置在光束传播方向上的照明单元(未图示)、带投影狭缝标记的投影标记板10、投影成像组20、折光棱镜30、分光镜40、探测单元及信号处理单元(未图示),所述照明单元产生的光束经所述投影标记板10后形成测量光斑,所述投影成像组20将所述测量光斑成像至基底60表面,所述折光棱镜30用于将经所述基底60表面第一次反射的光束折转后再次入射至所述基底60表面,所述分光镜40用于将经所述基底60表面第二次反射的光束折转至所述探测单元,所述信号处理单元根据所述探测单元测得的探测光斑计算所述基底60表面的离焦倾斜量。所述基底60包括硅片及玻璃基板。
所述折光棱镜30的横截面为等腰直角三角形,所述等腰直角三角形的角度分别为45度、90度、45度。所述折光棱镜30的斜面垂直于经所述基底60表面第一次反射的光束的光轴,且两直角面的交线棱位于经所述基底60表面第一次反射的光束的光轴上。
所述投影成像组20包括前透镜组21和后透镜组22,所述投影标记板10出射的测量光斑经所述分光镜40透射后依次入射至所述前透镜组21、后透镜组22及所述基底60表面,经所述基底60表面第二次反射的光束沿原路返回,并经所述分光镜40反射至所述探测单元。所述调焦调平装置复用投影4F系统,省去了探测支路4F系统,结构简单,方便装调,降低了生产成本。
所述探测单元包括带探测狭缝标记的探测标记板50和光能量探测器,所述光能量探测器用于探测透过所述探测狭缝标记的光能量变化。
所述调焦调平装置装调方案如下:
先确定所述折光棱镜30的方位。首先,通过在所述分光镜40左上方安装内调焦望远镜(未图示),使其出射的平行光束的光轴与分光镜40直角面垂直;然后,调整所述折光棱镜30的方位,使经过其斜边的反射光束的光轴与内调焦望远镜的出射光束的光轴重合。
再确定所述折光棱镜30的位置。装调方法如下:沿所述折光棱镜30斜边方向,平移所述折光棱镜30,直至光束入射至所述折光棱镜30后的透射光强分布,关于折光棱镜30斜边的垂直平分面(如图4中的BF)对称分布(此时,棱镜两直角面的交线棱位于投影支路的光轴上)。
请参见图5,当所述折光棱镜30安装时有平移误差Δ时(图中实线表示实际安装位置处的折光棱镜30,安装存在误差,虚线表示理想安装位置处的折光棱镜30;图3和图4中,实线表示实际安装位置处的基底60,安装存在误差,虚线表示理想安装位置处的基底60),当折光棱镜30沿斜边方向平移Δ时:平移前,光束DG的侧向偏移CD=2×CB';平移后,光束FH的侧向偏移EF=2×EA'=2×(CB'-Δ)=2×CB'-2Δ;即当折光棱镜30安装有Δ平移误差时,导致的光轴平移为2Δ。由图3可知,此光轴平移会导致探测标记板50上的探测光斑成像位置漂移,且两者之间有固定的比例。
请参见图4,当光束经过折光棱镜30后,光束再次以相同的角度反向入射在基底60上,并经过投影成像组20、分光镜40成像在探测标记板50上。当所述基底60离焦h时,经基底60再次反射的光束的光轴平移HI=CG=2×CF=4h×cosα,其中,α为光束与基底60的夹角。光束成像位置O’相对理想成像位置O的偏离为4h×cosα×β(β为从基底60到探测标记板50的放大倍率)。实际测量时,由O’O的距离根据公式反算出基底60的离焦量。
所述调焦调平装置一方面复用投影支路4F系统(省去了一个探测支路4F系统),使结构简单空间紧凑;另一方面由数学公式可知,探测精度提高一倍。
实施例二
请参见图6,实施例二与实施例一的区别在于,光束传播至所述基底60表面,以及经所述基底60第二次反射光束传播至探测标记板50的传播路径不同。具体为,所述投影成像组20包括前透镜组21、双反射镜组23及后透镜组22,所述投影标记板10出射的测量光斑依次入射至所述前透镜组21和双反射镜组23,之后经所述分光镜40透射后依次入射至所述后透镜组22及所述基底60表面,经所述基底60表面第二次反射的光束再次入射至所述后透镜组22后被所述分光镜40反射至所述探测标记板50。本实施例中所述双反射镜组23包括一固定振镜和一可动振镜,通过所述可动振镜调整所述测量光斑的出射方向。
所述调焦调平装置还包括探测镜组70,所述探测镜组70沿光束传播方向设置在所述分光镜40和所述探测单元50之间。
本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包括这些改动和变型在内。

Claims (8)

1.一种调焦调平装置,其特征在于,包括依次设置在光束传播方向上的照明单元、带投影狭缝标记的投影标记板、投影成像组、折光棱镜、分光镜、探测单元及信号处理单元,所述照明单元产生的光束经所述投影标记板后形成测量光斑,所述投影成像组将所述测量光斑成像至基底表面,所述折光棱镜用于将经所述基底表面第一次反射的光束折转后再次入射至所述基底表面,所述分光镜用于将经所述基底表面第二次反射的光束折转至所述探测单元,所述信号处理单元根据所述探测单元测得的探测光斑计算所述基底表面的离焦倾斜量。
2.根据权利要求1所述的调焦调平装置,其特征在于,所述折光棱镜的横截面为等腰直角三角形。
3.根据权利要求2所述的调焦调平装置,其特征在于,所述折光棱镜的斜面垂直于经所述基底表面第一次反射的光束的光轴,且两直角面的交线棱位于经所述基底表面第一次反射的光束的光轴上。
4.根据权利要求2所述的调焦调平装置,其特征在于,所述等腰直角三角形的角度分别为45度、90度、45度。
5.根据权利要求1所述的调焦调平装置,其特征在于,所述投影成像组包括前透镜组和后透镜组,所述测量光斑经所述分光镜透射后依次入射至所述前透镜组、后透镜组及所述基底表面,经所述基底表面第二次反射的光束沿原路返回,并经所述分光镜反射至所述探测单元。
6.根据权利要求1所述的调焦调平装置,其特征在于,所述投影成像组包括前透镜组、双反射镜组及后透镜组,所述测量光斑依次入射至所述前透镜组和双反射镜组,之后经所述分光镜透射后依次入射至所述后透镜组及所述基底表面,经所述基底表面第二次反射的光束再次入射至所述后透镜组后被所述分光镜反射至所述探测单元。
7.根据权利要求1所述的调焦调平装置,其特征在于,所述调焦调平装置还包括探测镜组,所述探测镜组沿光束传播方向设置在所述分光镜和所述探测单元之间。
8.根据权利要求1所述的调焦调平装置,其特征在于,所述探测单元包括带探测狭缝标记的探测标记板和光能量探测器,所述光能量探测器用于探测透过所述探测狭缝标记的光能量变化。
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