CN108085748A - A kind of corrosive liquid of monocrystalline silicon - Google Patents
A kind of corrosive liquid of monocrystalline silicon Download PDFInfo
- Publication number
- CN108085748A CN108085748A CN201711278220.0A CN201711278220A CN108085748A CN 108085748 A CN108085748 A CN 108085748A CN 201711278220 A CN201711278220 A CN 201711278220A CN 108085748 A CN108085748 A CN 108085748A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- corrosive liquid
- silicon
- present
- deionized water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention discloses a kind of corrosive liquid of monocrystalline silicon, according to the mass fraction including following components：0.4 part of xenon difluoride, 0.5 part of ammonium fluoride and 100 parts of deionized water.The corrosive liquid of the monocrystalline silicon is suitable for corrosion monocrystalline silicon or monocrystalline silicon and polysilicon layer in silicon dioxide substrates, and the corrosion rate of the corrosive liquid is fast, can reduce the toxicity in processing procedure.
Description
Technical field
The present invention relates to the technical field of fine chemistry industry, more particularly to a kind of corrosive liquid of monocrystalline silicon.
Background technology
The corrosive liquid of monocrystalline silicon is needed for corroding the monocrystalline silicon and polysilicon layer in monocrystalline silicon or silicon dioxide substrates, right
The corrosive nature requirement of corrosive liquid is higher.Therefore, it is badly in need of developing the corrosive liquid of the fast monocrystalline silicon of a corrosion rate.
The content of the invention
The object of the present invention is to provide a kind of corrosive liquid of monocrystalline silicon, solve one in above-mentioned prior art problem or
It is multiple.
The present invention provides a kind of corrosive liquid of monocrystalline silicon, according to the mass fraction including following components：0.4 part of bifluoride
Xenon, 0.5 part of ammonium fluoride and 100 parts of deionized water.
Specific embodiment
Following case study on implementation, is described in more detail the present invention.
Case study on implementation：
A kind of corrosive liquid of monocrystalline silicon, according to the mass fraction including following components：0.4 part of xenon difluoride, 0.5 part of fluorine
Change ammonium and 100 parts of deionized water.
The corrosive liquid of the monocrystalline silicon of the case study on implementation of the present invention is suitable for the list in corrosion monocrystalline silicon or silicon dioxide substrates
Crystal silicon and polysilicon layer, the corrosion rate of the corrosive liquid is fast, can reduce the toxicity in processing procedure.
Presented above is only the preferred embodiment of the present invention, it is noted that those skilled in the art, not
On the premise of departing from the invention design, various modifications and improvements can be made, these also should be regarded as the protection model of invention
Within enclosing.
Claims (1)
1. a kind of corrosive liquid of monocrystalline silicon, which is characterized in that according to the mass fraction including following components：0.4 part of xenon difluoride,
0.5 part of ammonium fluoride and 100 parts of deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711278220.0A CN108085748A (en) | 2017-12-06 | 2017-12-06 | A kind of corrosive liquid of monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711278220.0A CN108085748A (en) | 2017-12-06 | 2017-12-06 | A kind of corrosive liquid of monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108085748A true CN108085748A (en) | 2018-05-29 |
Family
ID=62174496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711278220.0A Withdrawn CN108085748A (en) | 2017-12-06 | 2017-12-06 | A kind of corrosive liquid of monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108085748A (en) |
-
2017
- 2017-12-06 CN CN201711278220.0A patent/CN108085748A/en not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180529 |