CN108085658A - Substrate board treatment - Google Patents
Substrate board treatment Download PDFInfo
- Publication number
- CN108085658A CN108085658A CN201711162704.9A CN201711162704A CN108085658A CN 108085658 A CN108085658 A CN 108085658A CN 201711162704 A CN201711162704 A CN 201711162704A CN 108085658 A CN108085658 A CN 108085658A
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- China
- Prior art keywords
- gas
- nozzle
- process container
- supply part
- board treatment
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Abstract
The present invention provides the substrate board treatment that can inhibit the deviation of supply gas concentration distribution between knead dough in real estate.Have：Process container is set to store and handle multiple substrates；Multiple gas nozzles are arranged in process container and extend along its length along process container circumferential array, the supply gas into process container；And exhaust portion, be arranged on process container in multiple gas nozzle relative positions, to gas exhaust in process container, gas nozzle contains：Nozzle base, along process container circumferential array；And gas supply part, it is connected with nozzle base, the supply gas into process container, multiple gas nozzles contain：1st gas nozzle contains the 1st gas supply part for being located at bottom in process container；And the 2nd gas nozzle, contain the 2nd gas supply part being located at than the 1st gas supply part position by the top, the 2nd gas nozzle is formed in a manner that the 1st gas supply part and the 2nd gas supply part are placed in along process container length direction on a straight line.
Description
Technical field
The present invention relates to substrate board treatments.
Background technology
In multiple substrates are carried out with the substrate board treatment of batch type of film process, it is provided with：Reaction vessel is received
Receive multiple substrates；Gas supply member, the supply gas into reaction vessel；And exhaust component, with gas supply member
Relatively, and to being exhausted in reaction vessel.
In the case where gas supply member is made of 1 pipeline, the higher reaction vessel of the supply pressure of gas
Interior lower part, the flow of gas is more, and the supply with gas generates the tendency of fluctuation in reaction vessel.Therefore, previous
Substrate board treatment in, be made of gas supply member the different multiple gas supply lines in the supply position of gas,
The flow of the upper and lower gas to being supplied that can be in reaction vessel controls.
A kind of substrate board treatment is disclosed in such as Japanese Unexamined Patent Publication 2011-187884 publications (patent document 1), the base
Plate processing unit possesses：Reaction tube stores multiple substrates and multiple substrates is handled；Multiple gas nozzles, to anti-
Interior supply gas should be managed；And gas exhaust port, the gas in reaction tube is exhausted.In addition, in Japanese Unexamined Patent Publication 2012-
No. 15536 publications (patent document 2) disclose a kind of substrate board treatment, which possesses：Process chamber, storage
Multiple substrates are simultaneously handled multiple substrates；Multiple gas supply lines, the supply gas into process chamber；And exhaust pipe
Line is exhausted to being supplied to the indoor gas of processing.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2011-187884 publications
Patent document 2：Japanese Unexamined Patent Publication 2012-15536 publications
The content of the invention
Problems to be solved by the invention
However, in the substrate board treatment recorded in patent document 1,2, the gas of multiple gas supply lines is provided with
Supply area and the position relationship that is provided with the exhaust gas region of exhaust outlet between opposite with the gas supply area hold in reaction
It is different up and down in device.Therefore, the film thickness that the distribution of the gas concentration supplied between substrate to each substrate generates deviation, formed a film
Becoming uneven between knead dough in the face of substrate becomes problem.
Therefore, it is an object of the invention to provide a kind of concentration that can inhibit supply gas between knead dough in the face of substrate
The substrate board treatment of the deviation of distribution.
The solution to the problem
In order to achieve the above objectives, the substrate board treatment of a form of the invention has：Process container is arranged to
Multiple substrates are enough stored, and the plurality of substrate is handled；Multiple gas nozzles are arranged in the process container, should
Circumferential array of multiple gas nozzles along the process container and the length direction extension along the process container, and to institute
State supply gas in process container；And exhaust portion, be arranged in the process container with the multiple gas nozzle phase
To position, which is exhausted the gas in the process container, and the multiple gas nozzle has：Nozzle base
Portion, along the circumferential array of the process container；And gas supply part, it is connected with the nozzle base, and to described
Supply gas in process container, the multiple gas nozzle have：1st gas nozzle has and is located in the process container
Bottom the 1st gas supply part；And the 2nd gas nozzle, have and be located at than the 1st gas supply part by the top
2nd gas supply part of position, with the 1st gas supply part and the 2nd gas supply part along the process container
Mode on length direction is dead in line forms the 2nd gas nozzle.
The effect of invention
A form according to the present invention can inhibit the deviation of the concentration distribution of supply gas in face between knead dough.
Description of the drawings
Fig. 1 is the skeleton diagram of the substrate board treatment of embodiments of the present invention.
Fig. 2 is the figure of an example of the gas nozzle for the substrate board treatment for representing Fig. 1.
Fig. 3 is the line A-A sectional view of Fig. 2.
Fig. 4 is the line B-B sectional view of Fig. 2.
Fig. 5 is the line C-C sectional view of Fig. 2.
Fig. 6 is the figure of another example (variation 1) of the gas nozzle for the substrate board treatment for representing embodiment.
Fig. 7 is the figure of another example (variation 2) of the gas nozzle for the substrate board treatment for representing embodiment.
Fig. 8 is the figure of an example of the guide portion for the substrate board treatment for illustrating embodiment.
Fig. 9 is the figure of another example of the guide portion for the substrate board treatment for representing embodiment.
Figure 10 is the figure for the gas nozzle for representing previous substrate board treatment.
Figure 11 is the line A-A sectional view of Figure 10.
Figure 12 is the line B-B sectional view of Figure 10.
Figure 13 is the line C-C sectional view of Figure 10.
(A) of Figure 14 is the figure for representing the Gas concentration distribution in Figure 11, and (B) of Figure 14 represents the gas concentration in Figure 12
Distribution, (C) of Figure 14 is the figure for representing the Gas concentration distribution in Figure 13.
Reference sign
1st, substrate board treatment；34th, process container；44th, inner tube；46th, outer tube；48th, nozzle incorporating section；52nd, opening portion；
76th, gas nozzle；77th, gas nozzle；78th, gas nozzle；79th, gas nozzle；80th, gas nozzle；81st, gas nozzle；76A、
Stomata；77A, stomata；78A, stomata；79A, stomata；80A, stomata；81A, stomata；76B, nozzle base；77B, nozzle base；
78B, nozzle base；79B, nozzle base；80B, nozzle base；81B, nozzle base；76C, gas supply part；77C, gas supply
To portion；78C, gas supply part；79C, gas supply part；80C, gas supply part；81C, gas supply part；100th, guide portion；
200th, guide portion；W, wafer.
Specific embodiment
Hereinafter, the form for being used to implement the present invention is illustrated referring to the drawings.In addition, in the various figures, exist to general
The structure situation that marks identical reference numeral and omit the description.
Fig. 1 is the skeleton diagram of the substrate board treatment of embodiment.Fig. 2 is the gas for the substrate board treatment for representing Fig. 1
The figure of one example of nozzle.Fig. 3 is the line A-A sectional view of Fig. 2, and Fig. 4 is the line B-B sectional view of Fig. 2, and Fig. 5 is the C-C of Fig. 2
Line sectional view.
As shown in Figure 1, substrate board treatment 1 has：Process container 34, store as substrate semiconductor crystal wafer (with
It is known as " wafer W " down)；Cover 36 airtightly blocks the opening portion side of the lower end of process container 34；Substrate holder tool 38,
It keeps multiple wafers W and is incorporated in process container 34 at predetermined intervals；Gas supply member 40, to process container
Predetermined gas is imported in 34；The gas in process container 34 is exhausted in exhaust component 41；And heating element 42,
It heats wafer W.
Semiconductor crystal wafer contains the compound semiconductor substrates such as silicon substrate, GaAs, SiC, GaN.In addition, it is not limited to this
The present invention can be also suitable for glass substrate, ceramic substrate etc. used in liquid crystal display device by a little semiconductor substrates.
Process container 34 has：There is the inner tube 44 of the cylindrical shape on top, lower end opens；And there is the cylindrical shape on top
Outer tube 46, lower end opens, and covers the outside of inner tube 44.Inner tube 44 and outer tube 46 are by the heat-resisting materials shape such as quartz
Into, and be configured to coaxial and become dual tube construction.
The top of inner tube 44 is for example flat.In the one side of inner tube 44, receipts are formed with along its length direction (vertical direction)
Receive the nozzle incorporating section 48 of gas nozzle.In this embodiment, as shown in Fig. 3~Fig. 5, a part for the side wall of inner tube 44 is made
It protrudes outward and forms protrusion 50, be formed as nozzle incorporating section 48 in protrusion 50.
In addition, as shown in Fig. 3~Fig. 5, in inner tube 44 with nozzle incorporating section 48 relatively and positioned at the side wall of opposite side, edge
The opening portion 52 that its length direction (vertical direction) is formed with rectangular shape.
Opening portion 52 is so as to the gas exhaust port that the mode that the gas in inner tube 44 is exhausted is formed, is this hair
One example of the exhaust portion in bright.The length of opening portion 52 be formed as with substrate holder tool 38 length it is identical or with than
The mode of the length length of substrate holder tool 38 is each extended over along vertical direction.I.e., the upper end extension configuration of opening portion 52 exists
With the height more than corresponding position in upper end of substrate holder tool 38, the lower end extension configuration of opening portion 52 is protected with substrate
Height below the corresponding position in lower end of holder tool 38.
In addition, in this example embodiment, the exhaust portion in the present invention be configured to be arranged at process container 34 it is inner tube 44, with
The opening portion 52 (gas exhaust port) of the opposite position of the gas nozzle discussed afterwards, but it is not limited to this composition.It can also set
For such as lower structure：For example, it is set in inside, opposite with the gas nozzle then the discussed position of the inner tube 44 of process container 34
Centrifugal fan (not shown) is put, opening portion (not shown) also is set at the top of inner tube 44, so as to from each stomata 76A~81A courts
Gas is discharged to centrifugal fan along horizontal direction, is made from centrifugal fan towards the opening portion at the top for being arranged at inner tube 44 row
The gas flowing of gas.
The lower end of process container 34 is supported by the manifold 54 of the cylindrical shape formed by such as stainless steel.In the upper of manifold 54
End is formed with flange part 56, and the lower end of outer tube 46 is set and is supported on flange part 56.Make O-ring seals etc. not shown
Containment member will be set to airtight conditions in outer tube 46 between the lower end of flange part 56 and outer tube 46.
Inner wall on the top of manifold 54 is provided with cricoid supporting part 60, the lower end of inner tube 44 is arranged at not shown
Supporting part on and the lower end of the inner tube 44 is supported.In the opening portion of the lower end of manifold 54, O-ring seals etc. are clipped
Containment member (not shown) and cover 36 is airtightly installed, by the opening portion side of the lower end of process container 34, i.e., manifold 54
Opening portion airtightly blocks.Cover 36 is formed by such as stainless steel.
In the central portion of cover 36, rotation axis 66 is provided through in a manner of across magnetic fluid seal portion 64.Rotation axis
66 lower part be rotatably supported on by boat elevating mechanism into lifting part 68 arm 68A, utilize horse (not shown)
Make its rotation up to 69.
The upper end of rotation axis 66 is provided with swivel plate 70, use is loaded across the warm stage 72 of quartz system on swivel plate 70
In the substrate holder tool 38 for keeping wafer W.Thus, it is lifted by making lifting part 68, cover 36 and substrate holder tool 38
It integrally moves up and down, substrate holder tool 38 can be made compared with insertion, disengaging in process container 34.
Gas supply member 40 is arranged at manifold 54, and the gases such as processing gas, purge gas are imported into inner tube 44.Gas
Supply part 40 has the gas nozzle 76~81 of multiple (such as 6) quartz system.Each gas nozzle 76~81 is along its length
Direction is arranged in inner tube 44, also, its base end part bends to L-shaped, is supported in a manner of running through manifold 54.
As shown in Fig. 3~Fig. 5, gas nozzle 76~81 is arranged at the spray of inner tube 44 in a manner of circumferentially becoming a row
In mouth incorporating section 48.Each gas nozzle 76~81 along its length direction be formed at predetermined intervals multiple stomata 76A~
81A can discharge each gas from each stomata 76A~81A towards horizontal direction.Predetermined interval is configured to being for example supported on
The interval of the wafer W of substrate holder tool 38 is identical.
In addition, the position of short transverse is set to each stomata 76A~81A in vertical direction between adjacent wafer W
Centre can effectively supply spatial portion of each gas between wafer W.
As the species of gas, using unstrpped gas, oxidizing gas and purge gas, while carrying out flow to each gas
Control, while can be supplied as needed via each gas nozzle 76~81.Using silicon-containing gas as unstrpped gas, use is smelly
Oxygen (O3) gas as oxidizing gas, uses nitrogen (N2Gas) as purge gas, atomic layer can be utilized to accumulate (ALD：
Atomic Layer Deposition) method formation silicon oxide film.In addition, the species of used gas can be according to being formed a film
The species of film suitably select.It enumerates in case of using ALD method and is illustrated, but it's not limited to that, also can
The present invention is suitable for the situation using such as CVD method.
In addition, in the present embodiment, the film process without using plasma are carried out, but it's not limited to that, also can
The situation of enough film process that the present invention is suitable for having used to plasma.In this case, such as by nozzle incorporating section
The outside of the partition wall of the protrusion 50 of 48 divisions sets to apply the high-frequency electrical of plasma generation along its length direction
The power liftgate of power and generate plasma.
The gas vent 82 in the side wall formation on the top of manifold 54 is provided in the top of supporting part 60.Gas vent 82
Be configured to, can to gas of the spatial portion 84 between inner tube 44 and outer tube 46 out of opening portion 52 is discharged inner tube 44 into
Row exhaust.Gas vent 82 is provided with exhaust component 41.Exhaust component 41 has the exhaust channel being connected with gas vent 82
86, pressure-regulating valve 88 and vacuum pump 90 are folded with successively in exhaust channel 86, it can be to being vacuumized in process container 34.
The heating element 42 of cylindrical shape is provided in a manner of covering outer tube 46 in the peripheral side of outer tube 46, to wafer W
It is heated.
In addition, the whole action of substrate board treatment 1 is controlled by the control unit 110 being made of such as computer etc.,
The program storage of the computer of the action is carried out in storage medium 112.Storage medium 112 is by such as floppy disk, CD, hard disk, sudden strain of a muscle
It deposits, the compositions such as DVD.
In the present embodiment, as shown in Fig. 2, there is gas nozzle 76~81 nozzle base 76B~81B and gas to supply
Portion 76C~81C.Nozzle base 76B~81B is configured along the circumferential array of process container 34.Nozzle base 76B~81B's is interior
The gas that portion feeds to supply in process container 34 passes through.
Gas supply part 76C~81C links into an integrated entity with nozzle base 76B~81B, the supply gas into process container.
In gas supply part 76C~81C, stomata 76A~81A of supply gas in oriented process container 34 is set.For stomata 76A~
81A is formed in gas supply part 76C~81C with multiple (for example, in fig. 2,5) holes.Pass through multiple gas as setting
Hole can be supplied uniformly across gas into process container 34.In addition, it in the present embodiment, is provided in 1 gas nozzle more
A stomata, form the hole of stomata quantity be not limited to it is multiple, as long as can into process container 34 supply gas, can also
It is formed in 1 gas nozzle with 1 hole.
In gas nozzle 76~81, gas nozzle 76,77 gas supply part 76C, 77C configuration in process container 34
In bottom.In addition, gas supply part 78C, 79C of gas nozzle 78,79 are configured at the gas supply part of gas nozzle 76,77
The top of 76C, 77C.Moreover, gas supply part 80C, 81C of gas nozzle 80,81 are configured at the gas of gas nozzle 78,79
The top of supply unit 78C, 79C.
Also, as shown in Fig. 2~Fig. 5, the length direction (lead of gas supply part 76C, 78C, 80C along process container 34
Vertical direction) it is arranged on a straight line.In addition, the length direction of gas supply part 77C, 79C, 81C along process container 34
On (vertical) is dead in line.
In such a configuration, gas supply part 76C, 78C, 80C of gas nozzle 76,78,80 cross over process container 34
Interior lower floor, middle level are arranged into upper strata a row, therefore, become the identical structure of the structure formed with by same pipeline.
In addition, gas supply part 77C, 79C, 81C of gas nozzle 77,79,81 also across in process container 34 lower floor, middle level, on
Layer ground is arranged into one and arranges, and becomes the identical structure of the structure formed with by same pipeline.
Using the structure, gas can be carried out by the gas supply area of supply gas and with what the region was oppositely arranged
The exhaust gas region of exhaust is set to the upper and lower identical position relationship in process container 34.Therefore, it is possible in the face of substrate and
Inhibit the deviation of the concentration distribution of supply gas between face.The film thickness that as a result, it is possible to make to be formed a film between knead dough in the face of substrate
Uniformly.
In the present embodiment, gas nozzle 76~81 is accommodated in nozzle incorporating section 48, but as shown in Fig. 3~Fig. 5, nozzle
The width dimensions of opening portion 52 of the width dimensions of incorporating section than forming gas exhaust port are wide.Therefore, in previous gas nozzle
In the case of (gas nozzle 76~81 shown in Figure 10~13), gas supply area corresponding with nozzle incorporating section and setting
There is the position relationship between the exhaust gas region of opening portion 52 different up and down in process container 34, supplied between substrate to each substrate
The distribution for the gas concentration given generates deviation.
In contrast, as in the present embodiment by using with the structure being made of with gas supply part same pipeline
The gas nozzle of identical structure, can by the gas supply area of supply gas and with the region be oppositely arranged to gas into
The exhaust gas region of row exhaust is set to the reliably identical position relationship up and down in process container 34.Therefore, it is possible in substrate
Face in be reliably suppressed between knead dough supply gas concentration distribution deviation, the knead dough in the face of substrate can be reliably suppressed
Between the membrane thickness unevenness that is formed a film.
In addition, as shown in Fig. 2, in gas nozzle 76~81, nozzle base 76B, 77B of gas nozzle 76,77 formed
To be linear, and link into an integrated entity with gas supply part 76C, 77C.In contrast, the nozzle base 78B of gas nozzle 78~81
The end of the one side being connected with gas supply part 78C~81C of~81B is formed as L-shaped.In other words, nozzle base 78B~
81B is connected with the state that end has been bent with the lower end of gas supply part 78C~81C.
Such nozzle base 78B~81B is connected via the end of L-shaped with gas supply part 78C~81C, so as to
Prevent the gas nozzle of upper side and the gas nozzle of lower side from interfering.Therefore, it is possible to prevent that each gas nozzle is damaged, separately
Outside, the installation exercise of gas nozzle becomes easy.
In addition, Fig. 6 is another example (variation 1) for representing used gas nozzle in the present embodiment
Figure.As shown in fig. 6, state and gas supply part that nozzle base 78B~81B of gas nozzle 78~81 is turned back with end
The upper end connection of 78C~81C.The end of the L-shaped of nozzle base 78B~81B and gas supply part 78C~81C by doing so
Upper end connection, be reliably prevented from the gas nozzle of upper side and the gas nozzle of lower side interfere.
In addition, Fig. 7 is another example (variation 2) for representing used gas nozzle in the present embodiment
Figure.As shown in fig. 7, state and gas supply part that nozzle base 78B~81B of gas nozzle 78~81 has been bent with end
The central portion connection of 78C~81C.By the end of the L-shaped of nozzle base 78B~81B with gas supply part 78C~81C's
Central portion connects, while prevent the gas nozzle of upper side and the gas nozzle of lower side from interfering, meanwhile, shown in Fig. 6
With the upper end of gas supply part 78C~81C connection situation compared with, nozzle base 78B~81B can be shortened.
In addition, gas nozzle 76,77, stomata 76A, 77A, nozzle base 76B, 77B and gas supply part 76C, 77C
It is an example of the 1st gas nozzle in the present invention, the 1st nozzle base and the 1st gas supply part.In addition, gas nozzle
78th, 79, stomata 78A, 79A, nozzle base 78B, 79B and gas supply part 78C, 79C are the 2nd gas sprays in the present invention
One example of mouth, the 2nd nozzle base and the 2nd gas supply part.Moreover, gas nozzle 80,81, stomata 80A, 81A, spray
Mouth base portion 80B, 81B and gas supply part 80C, 81C are the 3rd gas nozzle, the 3rd nozzle base, Yi Ji in the present invention
One example of 3 gas supply parts.
Fig. 8 is the figure of an example of the guide portion for the substrate board treatment for illustrating embodiment.Configuring above-mentioned gas
In the case of body nozzle, as shown in figure 8, guide portion 100 can also be set.Guide portion 100 can be configured to, such as a pair is blocked
Stator 100A is formed at the inner wall of process container 34, and utilizes the locking gas supply part 76C~81C of a pair of locking piece 100A.
By guide portion 100 as setting, can gas nozzle be configured with stable state, in addition, (gas supplies gas nozzle
Portion) positioning become easy.
Fig. 9 is the figure of another example of the guide portion for the substrate board treatment for illustrating embodiment.In this example embodiment, example
The gas supply part 76C arranged along vertical direction the and gas supply part 78C constructions linked can be such as arranged to gas spray
Between mouth 76 and gas nozzle 78.Specifically, recess portion 76D is formed in the upper end of the gas supply part 76C of gas nozzle 76,
Protrusion 78D is formed in the lower end of the gas supply part 78C of gas nozzle 78.Also, pass through the protrusion for making gas supply part 78C
78D is with the recess portion 76D of gas supply part 76C chimeric to form guide portion 200.Even if guide portion 200 as setting, also can
Gas nozzle is configured with stable state, in addition, the positioning of gas nozzle (gas supply part) becomes easy.
In addition, guide portion 100,200 is an example of the guide mechanism in the present invention.
Figure 10 is the figure for the gas nozzle for representing previous substrate board treatment.In addition, Figure 11 is the line A-A section view of Figure 10
Figure, Figure 12 is the line B-B sectional view of Figure 10, and Figure 13 is the line C-C sectional view of Figure 10.Moreover, (A) of Figure 14 is represented in Figure 11
Gas concentration distribution figure, (B) of Figure 14 represents the Gas concentration distribution in Figure 12, and (C) of Figure 14 is represented in Figure 13
The figure of Gas concentration distribution.
For the gas nozzle 76~81 used in previous substrate board treatment, as shown in Figure 10~Figure 13, if
It is equipped with the gas supply area of multiple gas supply lines and opposite with the gas supply area and be provided with composition gas exhaust
Position relationship between the exhaust gas region of the opening portion 52 of mouth is different up and down in reaction vessel.Therefore, as Figure 14 (A)~
(C) shown in, if the Gas concentration distribution in the face of upper strata, middle level, lower floor to substrate is compared, confirm：With gas
Center of the body nozzle 76~81 (gas supply part 76C~81C) away from gas supply area, upper layer side, more divides in gas
Cloth forms deviation.
In contrast, in the substrate board treatment 1 of present embodiment, by using Fig. 1~gas nozzle shown in Fig. 7
76~81, gas supply part 76C, 78C, 80C are arranged along the length direction (vertical) of process container 34 in always
On line.In this configuration, the situation that the Gas concentration distribution in the face to substrate is compared in upper strata, middle level, lower floor
Under, it confirms：Even upper strata and middle level also become the distribution of the gas concentration roughly the same with lower layer side (with reference to Figure 14's
(C)).Thus, by using the substrate board treatment 1 of present embodiment, can inhibit to supply gas between knead dough in the face of substrate
The deviation of the concentration distribution of body can make the uniform film thickness to be formed a film in the face of substrate between knead dough.
More than, the form for being used to implement the present invention is illustrated, but the above does not limit the content of invention, and it can
Various deformations and improvements are carried out within the scope of the invention.
Claims (12)
1. a kind of substrate board treatment, has：
Process container is configured to store multiple substrates, and the plurality of substrate is handled；
Multiple gas nozzles are arranged in the process container, circumferential direction of the plurality of gas nozzle along the process container
It arranges and extends along the length direction of the process container, and the supply gas into the process container；And
Exhaust portion, the position opposite with the multiple gas nozzle being arranged in the process container, the exhaust portion is to institute
The gas stated in process container is exhausted,
The multiple gas nozzle has：Nozzle base, along the circumferential array of the process container；And gas supply
Portion is connected with the nozzle base, and the supply gas into the process container,
The multiple gas nozzle has：1st gas nozzle has the 1st gas of the bottom being located in the process container
Body supply unit；And the 2nd gas nozzle, there is the 2nd gas for being located at the position than the 1st gas supply part by the top to supply
To portion,
With the 1st gas supply part and the 2nd gas supply part one is configured at along the length direction of the process container
Mode on straight line forms the 2nd gas nozzle.
2. substrate board treatment according to claim 1, wherein,
1st nozzle base of the 1st gas nozzle is formed as linear,
The end of the one side being connected with the 2nd gas supply part of 2nd nozzle base of the 2nd gas nozzle is formed as L
Shape.
3. substrate board treatment according to claim 2, wherein,
2nd nozzle base is connected with the lower end of the 2nd gas supply part.
4. substrate board treatment according to claim 2, wherein,
2nd nozzle base is connected with the upper end of the 2nd gas supply part.
5. substrate board treatment according to claim 2, wherein,
2nd nozzle base is connected with the central portion of the 2nd gas supply part.
6. the substrate board treatment according to any one of claim 2~5, wherein,
The multiple gas nozzle also has the 3rd gas nozzle, and the 3rd gas nozzle has to be located to be supplied than the 2nd gas
3rd gas supply part of the position of portion by the top.
7. substrate board treatment according to claim 6, wherein,
3rd nozzle base of the 3rd gas nozzle is formed as L-shaped.
8. substrate board treatment according to claim 1, wherein,
The substrate board treatment has nozzle incorporating section, which is arranged in the process container, and described in storage
Multiple gas nozzles,
The width dimensions of the exhaust portion are narrower than the width dimensions of the nozzle incorporating section.
9. substrate board treatment according to claim 1, wherein,
In the gas supply part, the stomata of 1 or more of supply gas in the oriented process container is set.
10. substrate board treatment according to claim 1, wherein,
The substrate board treatment has the guide mechanism of the locking gas supply part.
11. substrate board treatment according to claim 10, wherein,
The guide mechanism is formed at the inner wall of the process container.
12. substrate board treatment according to claim 10, wherein,
The guide mechanism has the construction for linking the gas supply part arranged along vertical direction.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-226354 | 2016-11-21 | ||
| JP2016226354A JP6710149B2 (en) | 2016-11-21 | 2016-11-21 | Substrate processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108085658A true CN108085658A (en) | 2018-05-29 |
Family
ID=62172603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711162704.9A Pending CN108085658A (en) | 2016-11-21 | 2017-11-21 | Substrate board treatment |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6710149B2 (en) |
| KR (1) | KR102205380B1 (en) |
| CN (1) | CN108085658A (en) |
| TW (1) | TWI689010B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993498A (en) * | 2018-10-02 | 2020-04-10 | 东京毅力科创株式会社 | Injector, and substrate processing apparatus and substrate processing method using the same |
| CN113818008A (en) * | 2020-06-19 | 2021-12-21 | 东京毅力科创株式会社 | Gas nozzle, substrate processing apparatus, and substrate processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3599290A3 (en) * | 2018-07-24 | 2020-06-03 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |
| JP7315607B2 (en) * | 2021-03-16 | 2023-07-26 | 株式会社Kokusai Electric | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
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| US20110212599A1 (en) * | 2010-03-01 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
| CN102290359A (en) * | 2010-06-15 | 2011-12-21 | 东京毅力科创株式会社 | Support structure, processing container structure and processing apparatus |
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| JP2575742B2 (en) * | 1987-10-20 | 1997-01-29 | 東京エレクトロン株式会社 | Heat treatment furnace |
| JPH07183228A (en) * | 1993-12-24 | 1995-07-21 | Canon Inc | Deposited film forming device |
| CN1762043B (en) | 2003-08-26 | 2010-05-05 | 株式会社日立国际电气 | Method for manufacturing semiconductor device and substrate processing apparatus |
| JP2011187884A (en) | 2010-03-11 | 2011-09-22 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
| JP2012004408A (en) * | 2010-06-18 | 2012-01-05 | Tokyo Electron Ltd | Support structure and processing unit |
| JP6199570B2 (en) * | 2013-02-07 | 2017-09-20 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
| JP6128969B2 (en) * | 2013-06-03 | 2017-05-17 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
| JP6435967B2 (en) * | 2015-03-31 | 2018-12-12 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
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- 2016-11-21 JP JP2016226354A patent/JP6710149B2/en active Active
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- 2017-11-16 KR KR1020170152954A patent/KR102205380B1/en active IP Right Grant
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| JPH01109714A (en) * | 1987-10-22 | 1989-04-26 | Nec Corp | Vapor-phase epitaxy appratus |
| US20110212599A1 (en) * | 2010-03-01 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
| CN102290359A (en) * | 2010-06-15 | 2011-12-21 | 东京毅力科创株式会社 | Support structure, processing container structure and processing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993498A (en) * | 2018-10-02 | 2020-04-10 | 东京毅力科创株式会社 | Injector, and substrate processing apparatus and substrate processing method using the same |
| CN113818008A (en) * | 2020-06-19 | 2021-12-21 | 东京毅力科创株式会社 | Gas nozzle, substrate processing apparatus, and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102205380B1 (en) | 2021-01-19 |
| JP2018085392A (en) | 2018-05-31 |
| KR20180057537A (en) | 2018-05-30 |
| JP6710149B2 (en) | 2020-06-17 |
| TW201834063A (en) | 2018-09-16 |
| TWI689010B (en) | 2020-03-21 |
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