CN108075457A - A kind of anti-surge circuit, surge pipe and the electrical equipment with the surge pipe - Google Patents
A kind of anti-surge circuit, surge pipe and the electrical equipment with the surge pipe Download PDFInfo
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- CN108075457A CN108075457A CN201711444201.0A CN201711444201A CN108075457A CN 108075457 A CN108075457 A CN 108075457A CN 201711444201 A CN201711444201 A CN 201711444201A CN 108075457 A CN108075457 A CN 108075457A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
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- Emergency Protection Circuit Devices (AREA)
Abstract
The present invention provides a kind of anti-surge circuit, surge pipe and the electrical equipments with the surge pipe.Anti-surge circuit, including input terminal VIN and output terminal VOUT, an electric current is flowed into anti-surge circuit from input terminal VIN and exported from output terminal VOUT, and anti-surge circuit further includes：Surge diode, the plus earth of surge diode, cathode are connected with input terminal VIN, and electric current is through surge diode clamp a to first voltage；N-type metal-oxide-semiconductor, the source electrode of N-type metal-oxide-semiconductor are connected with the cathode of surge diode, and the adjustable voltage current potential connection of grid and anti-surge circuit, drain electrode is connected with output terminal VOUT；When the surge pulse of electric current is more than first voltage, surge pulse is less than the driving voltage Vgs of N-type metal-oxide-semiconductor, and electric current is isolated in N-type MOS shut-offs.After adopting the above technical scheme, the power port being connected with the surge pipe can be protected further, extend the service life of electrical equipment.
Description
Technical field
The present invention relates to field of electrical control more particularly to a kind of anti-surge circuit, surge pipe and there is the surge pipe
Electrical equipment.
Background technology
Growing with electrical equipment, the power requirements of power supply also more improve needed for electrical equipment.At present in electricity
Most of for the protection of the surge of high current in the power port of gas equipment be designed using common surge pipe, but
It is that this surge pipe simply has fixed clamp voltage in itself, for, to carrying out surge protection demand, leading in different electrical equipments
The normal practice is using different model, with the surge pipe of adaptation, so as to can cause difficult in maintenance.And it to be used greatly in some necessity
In the case of the electrical equipment of electric current, due to the limitation of technique, effective protection power source can not be reached using individual surge pipe
The purpose of port.
Therefore, it is necessary to the anti-surge circuits in a kind of new surge pipe, can further protect and are connected with the surge pipe
Power port, extend the service life of electrical equipment.
The content of the invention
In order to overcome above-mentioned technological deficiency, it is an object of the invention to provide a kind of anti-surge circuit, surge pipe and have
The electrical equipment of the surge pipe by the design of adjustable clamp voltage, ensures that electrical equipment is safer at work.
The invention discloses a kind of anti-surge circuit, including input terminal VIN and output terminal VOUT, an electric current is from the input
End VIN is flowed into the anti-surge circuit and exported from the output terminal VOUT, and the anti-surge circuit further includes：
Surge diode, the plus earth of the surge diode, cathode are connected with the input terminal VIN, the electric current
Through the surge diode clamp a to first voltage；
N-type metal-oxide-semiconductor, the source electrode of the N-type metal-oxide-semiconductor are connected with the cathode of the surge diode, grid and the anti-wave
The adjustable voltage current potential connection of circuit is gushed, drain electrode is connected with the output terminal VOUT；
When the surge pulse of the electric current is more than the first voltage, the surge pulse is less than the N-type metal-oxide-semiconductor
The electric current is isolated in driving voltage Vgs, the N-type MOS shut-offs.
Preferably, the anti-surge circuit is arranged in an antisurge module, the input terminal VIN, output terminal VOUT and can
Voltage potential is adjusted as the port outside the antisurge module.
Preferably, the ground terminal being connected with the anode of the surge diode is the end outside the antisurge module
Mouthful.
Preferably, the anti-surge circuit further includes：
Capacitance C, one end of the capacitance C are connected with the output terminal VOUT, another ground connection.
Preferably, the capacity of the capacitance C is 1-10 μ F.
Preferably, the capacity of the capacitance C is 1 μ F.
The invention also discloses a kind of surge pipe, including above-mentioned anti-surge circuit.
The present invention discloses a kind of electrical equipment again, and including power supply, the power supply is connected with above-mentioned surge pipe.
After employing above-mentioned technical proposal, compared with prior art, have the advantages that：
1. the clamp voltage of anti-surge circuit is adjustable, according to different electrical equipments, different clamp voltages can be set, fitted
It is strong with property；
2. by two level protection can more effectively protection power source port, extend the working life of electrical equipment.
Description of the drawings
Fig. 1 is the electrical block diagram for meeting the anti-surge circuit in one embodiment of the present invention.
Specific embodiment
The advantages of the present invention is further explained below in conjunction with attached drawing and specific embodiment.
Here exemplary embodiment will be illustrated in detail, example is illustrated in the accompanying drawings.Following description is related to
During attached drawing, unless otherwise indicated, the same numbers in different attached drawings represent the same or similar element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the disclosure.On the contrary, they be only with it is such as appended
The example of the consistent apparatus and method of some aspects be described in detail in claims, the disclosure.
It is only merely for the purpose of description specific embodiment in the term that the disclosure uses, and is not intended to be limiting the disclosure.
" one kind " of singulative used in disclosure and the accompanying claims book, " described " and "the" are also intended to including majority
Form, unless context clearly shows that other meanings.It is also understood that term "and/or" used herein refers to and wraps
Containing one or more associated list items purposes, any or all may be combined.
It will be appreciated that though various information, but this may be described using term first, second, third, etc. in the disclosure
A little information should not necessarily be limited by these terms.These terms are only used for same type of information being distinguished from each other out.For example, it is not departing from
In the case of disclosure scope, the first information can also be referred to as the second information, and similarly, the second information can also be referred to as
One information.Depending on linguistic context, word as used in this " if " can be construed to " ... when " or " when ...
When " or " in response to determining "
In the description of the present invention, it is to be understood that term " longitudinal direction ", " transverse direction ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instructions such as "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer " is based on attached drawing institutes
The orientation or position relationship shown is for only for ease of the description present invention and simplifies description rather than instruction or imply signified dress
It puts or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit of the invention
System.
In the description of the present invention, unless otherwise prescribed with limit, it is necessary to explanation, term " installation ", " connected ",
" connection " should be interpreted broadly, for example, it may be the connection inside mechanical connection or electrical connection or two elements, it can
To be to be connected directly, can also be indirectly connected by intermediary, it for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
In subsequent description, using for representing that the suffix of such as " module ", " component " or " unit " of element is only
Be conducive to the explanation of the present invention, itself there is no specific meanings.Therefore, " module " can mixedly make with " component "
With.
Refering to Fig. 1, to meet the electrical block diagram of the anti-surge circuit in one embodiment of the present invention.In the reality
It applies in example, anti-surge protection circuit includes input terminal VIN and output terminal VOUT, and input terminal VIN is mutually connected with output terminal VOUT
It connects, when input terminal VIN inputs an electric current, will be flowed into from input terminal VIN inside anti-surge circuit, and then and from output terminal
VOUT is exported, and is flow in the subsequent conditioning circuit being connected with the anti-surge protection circuit.
In order to enable the anti-surge circuit plays an important role of multistage Anti-surging, further included in the anti-surge circuit：
Surge diode, plus earth, cathode are connected with input terminal VIN, will when electric current is inputted from input terminal VIN
By the surge diode clamp a to first voltage, i.e., the surge pulse clamper as much as possible that the electric current has to a certain range
It is interior.Surge diode is also referred to as Transient Suppression Diode, claims TVS, is a kind of high-effect protection device of diode.When
When the two poles of the earth of TVS diode are subject to reversed transient state high energy impact events, it can with the speed of 10 minus 12 power second-time, by its two
The high impedance of interpolar becomes Low ESR, absorbs up to thousands of watts of surge power, and the voltage clamping for making two interpolars is predetermined in one
Value effectively protects the precision components in electronic circuit, from the damage of various surge pulses.Since it has the response time
Soon, transient power is big, leakage current is low, breakdown voltage deviation, clamp voltage are relatively easy to control, without damage limit, it is small the advantages that.
Be widely used in computer system, communication apparatus, AC/DC power supply, automobile, electric ballast, household electrical appliance, instrument and meter,
Kilowatt-hour meter, RS232/422/423/485, I/O, LAN, ISDN, ADSL, USB, MP3, PDAS, GPS, CDMA, GSM, Digital photographic
The protection of machine, common mode/differential mode protection, RF couplings/IC driving receptions protection, the inhibition of motor electromagnetic wave interference, audio/video are defeated
Enter, sensor/speed changer, industry control circuit, relay, the every field such as inhibition of contactor noise.The circuit symbol of TVS with it is general
Logical zener diode is identical.Its forward characteristic is identical with general-purpose diode；Reverse characteristic is typical PN junction avalanche device.
Under the effect of transient peak pulse current, the electric current of TVS is flowed through, IR is risen to by original reverse leakage stream ID
When, it is breakdown that voltage that the two poles of the earth are presented by specified reversed shut-off voltage VWM rises to breakdown voltage VBR, TVS.With peak value
The appearance of pulse current, the electric current for flowing through TVS reach peak pulse current IPP.Voltage at its two poles of the earth is clamped to predetermined
Below maximum clamp voltage.Then, as pulse current is by exponential damping, the voltage at TVS the two poles of the earth also constantly declines, finally recovers
To initial state.Here it is the surge pulse power that is likely to occur of TVS inhibition, the whole process of electronic component is protected.
Maximum Reverse Leakage Current ID and specified reversed shut-off voltage VWM is the direct current of TVS maximum continuous works or pulse electricity
Pressure, when this backward voltage adds in two interpolar of TVS, it is in reversed off state, flows through its electric current and should be less than or wait
In its Maximum Reverse Leakage Current ID.
Minimum breakdown voltage VBR and breakdown current IR is the avalanche voltage of TVS minimums.At 25 DEG C, before this voltage,
TVS is not turned on.When TVS flows through defined 1mA electric current (IR), the voltage of two interpolars of TVS is added in as its minimum breakdown potential
Press VBR.By the VBR of TVS and the dispersion degree of standard value, TVS can be divided to for ± 5%VBR and two kinds of ± 10%VBR.For ±
For 5%VBR, VWM=0.85VBR；For ± 10%VBR, VWM=0.81VBR.
When the duration flowing through TVS for the pulse peak current IPP of 20 microseconds, in the peak-peak that its two interpolar occurs
Voltage is VC.It is the combination in series resistance and because of the rising of both temperatures coefficient voltage.VC, IPP reflect the surge of TVS device
Rejection ability.The ratio between VC and VBR are known as the clamper factor, generally between 1.2~1.4.
Capacitance C is that TVS snowslide knots section determines, measured under specific 1MHZ frequencies.The size of C and TVS's
Current carrying capability is directly proportional, and C, which crosses senior general, makes signal decay.Therefore, C is the important parameter that data interface circuit selects TVS.
Peak-peak pulse power consumption PM is the peak-peak pulse dissipation power that TVS can be born.Its defined test pulse
The PM values of waveform and various TVS, refer to article handbook.Under given maximum clamp voltage, power consumption PM is bigger, wave
The ability to bear for gushing electric current is bigger；Under given power consumption PM, clamp voltage VC is lower, and the ability to bear of surge current is got over
Greatly.In addition, peak pulse power consumption is also related with impulse waveform, duration and environment temperature.And the transient state that TVS can bear
Pulse is unduplicated, and pulse recurrence frequency as defined in device (the ratio between duration and intermittent time) is 0.01%, if electric
Duplicating property pulse in road is considered as " accumulation " of pulse power, it is possible to damage TVS.
Clamping time TC is time of the TVS both end voltages from zero to minimum breakdown voltage VBR.It is usually 1 to unipolarity TVS
× 10-12 seconds；It it is usually 1 × 10-11 seconds to bipolarity TVS.
TVS device can be divided into two kinds of unipolarity and bipolarity by polarity, can be divided into what various circuits were all suitable for by purposes
The tailored version device that universal device and special circuit are applicable in.Such as：Various alternating voltage protectors, the environmental protection of 4~200mA electric currents
Device, data cable protector, coaxial cable protector, protector for telephone set etc..If it can be divided by encapsulation and internal structure：Axially draw
Line diode, dual-in-line TVS arrays (being applicable in multi-thread protection), patch type, assembly type and high power module formula etc..
When selecting surge diode, the following should be noted：
1st, determine by the maximum direct current or continuous work voltage of protection circuit, the rated standard voltage of circuit and " high-end " appearance
Limit.
2nd, the specified reversed shut-off VWM of TVS should be greater than or equal to by the maximum working voltage of protection circuit.If the VWM selected
Too low, device is possibly into snowslide or because of the too big normal work for influencing circuit of reverse leakage current.Component voltage is connected in series, parallel
Connection divides electric current.
3rd, the maximum clamp voltage VC of TVS should be less than being protected the damage voltage of circuit.
4th, within the defined pulse duration, the peak-peak pulse power consumption PM of TVS is had to be larger than by protection circuit
The peak pulse power being likely to occur.After maximum clamp voltage is determined, peak pulse current should be greater than electrical surge electric current.
5th, for the protection of data interface circuit, it is necessary to pay attention to choosing the TVS device with suitable capacitance C.
6th, the polarity and encapsulating structure of TVS is selected according to purposes.Alternating current circuit selects bipolarity TVS relatively reasonable；It is multi-thread
Protection selects TVS arrays advantageously.
7th, temperature considers.Transient Voltage Suppressor can work between -55~+150 DEG C.If necessary to TVS at one
The temperature work of variation, since its reverse leakage stream ID is increased with increase；Power consumption increases with TVS junction temperatures and is declined, from+25
DEG C to+175 DEG C, about linear decline 50% and breakdown voltage VBR is increased with the increase of temperature by certain coefficient.
On the basis of surge diode, anti-surge circuit further includes N-type metal-oxide-semiconductor, source electrode and the surge two of N-type metal-oxide-semiconductor
The adjustable voltage current potential of the cathode connection of pole pipe, grid and anti-surge circuit connects, and drain electrode is connected with output terminal VOUT.Work as electric current
Surge pulse be more than first voltage when, surge pulse be less than N-type metal-oxide-semiconductor driving voltage Vgs, N-type metal-oxide-semiconductor shut-off, isolation
Electric current.Using the drain electrode of N-type metal-oxide-semiconductor as input, grid controls the electrical voltage point of clamper, from external adjustable voltage as foot is controlled
The maximum voltage point position Vctr of Vout is set at current potential, for example, the Vcontrol=Vctr of N-type metal-oxide-semiconductor can be set, if at this point,
Fail to effectively reduce surge voltage at first order clamper, i.e. the surge diode, at this time the characteristic due to N-type metal-oxide-semiconductor in itself,
Only work as Vgs>N-type metal-oxide-semiconductor can just turn on when Vth, so N-type metal-oxide-semiconductor can turn off rapidly at this time, isolated power supply access,
So as to be effectively protected back end device.
Why N-type metal-oxide-semiconductor is commonly used, and is and the easy to manufacture because conducting resistance is small.So Switching Power Supply and motor driving
Application in, generally all use N-type metal-oxide-semiconductor.With the presence of parasitic capacitance, the presence of parasitic capacitance between three pins of N-type metal-oxide-semiconductor
So that bother when designing or selecting driving circuit, but have no idea to avoid.N-type metal-oxide-semiconductor drain and source electrode it
Between there are one parasitic diode.This is body diode, and at driving inductive load (such as motor), this diode is critically important.No
Pipe is N-type metal-oxide-semiconductor or p-type metal-oxide-semiconductor, will be consumed after conducting with the presence of conducting resistance, such electric current on this resistance
Energy, the energy of this part consumption are called conduction loss.The small metal-oxide-semiconductor of selection conducting resistance can reduce conduction loss.N-type MOS
Pipe when conducting and cut-off, is completed in moment.The process that there are one the voltages at N-type metal-oxide-semiconductor both ends declines,
The electric current flowed through is there are one the process risen, and during this period of time, the loss of N-type metal-oxide-semiconductor is the product of voltage and current, is called
Switching losses.Usual switching losses are more much bigger than conduction losses, and switching frequency is faster, and loss is also bigger.Turn on moment electricity
Pressure and the product of electric current are very big, caused by lose it is also just very big.Shorten switch time, loss during each conducting can be reduced；
Switching frequency is reduced, the on-off times in the unit interval can be reduced.Both methods can reduce switching losses.
It is compared with bipolar transistor, it is considered that make the conducting of N-type metal-oxide-semiconductor that electric current be not required, as long as GS voltages are higher than one
Fixed value, it is possible to.In the structure of N-type metal-oxide-semiconductor it can be seen that, there are parasitic capacitance between GS, GD, and N-type metal-oxide-semiconductor
Driving, the actually charge and discharge to capacitance.One electric current is needed to the charging of capacitance, because can to capacitance charging transient
Capacitance is regarded as short circuit, so immediate current can be bigger.First it should be noted that can during selection/design N-type metal-oxide-semiconductor driving
The size of instantaneous short circuit electric current is provided.Second it is noted that be commonly used to the N-type metal-oxide-semiconductor of high-side driver, and when conducting needs to be grid
Pole tension is more than source voltage.And source voltage is identical with drain voltage (VCC) during the N-type metal-oxide-semiconductor conducting of high-side driver, so
At this moment grid voltage is bigger 4V than VCC or 10V.If in same system, the voltage bigger than VCC is obtained it is necessary to special
Booster circuit.Many motor drivers are all integrated with charge pump, it is noted that suitable external capacitor should be selected, with
It obtains enough short circuit current flows and removes driving N-type metal-oxide-semiconductor.4V or 10V that top is said are the conducting voltages of common metal-oxide-semiconductor, design
Shi Dangran needs certain surplus.And voltage is higher, and conducting speed is faster, and conducting resistance is also smaller.There are also conductings
The smaller metal-oxide-semiconductor of voltage is used in different fields, but in 12V automobile electronic systems, general 4V conductings are just enough.
The corresponding MOS drivings of present N-type metal-oxide-semiconductor, there is several special applications：
1st, low pressure applications
When using 5V power supplys, at this time if using traditional totem pole configuration, since the be of triode has 0.7V or so
Pressure drop, the voltage that reality is finally added on gate is caused there was only 4.3V.At this time, the N-type of nominal gate voltages 4.5V is selected
Metal-oxide-semiconductor there is certain risk.The problem of similary, also occurs in the occasion using 3V or other low-tension supplies.
2nd, Width funtion application
Input voltage is not a fixed value, it can be changed with time or other factors.This variation causes
It is unstable that pwm circuit, which is supplied to the driving voltage of N-type metal-oxide-semiconductor,.In order to make N-type metal-oxide-semiconductor safe under high gate voltages, very
The built-in voltage-stabiliser tube of more N-type metal-oxide-semiconductors imposes restrictions on the amplitude of gate voltages.In this case, when the driving voltage of offer surpasses
The voltage of voltage-stabiliser tube is crossed, larger quiescent dissipation will be caused.Meanwhile if simply gate is reduced with the principle of electric resistance partial pressure
Voltage, be just present with input voltage it is higher when, the work of N-type metal-oxide-semiconductor is good, and gate electricity when input voltage reduces
Pressure deficiency causes conducting not thorough enough, so as to increase power consumption.
3rd, twin voltage application
In some control circuits, logical gate uses typical 5V 3.3V digital voltages, and power section uses
The voltage of 12V even more highs.Two voltages are connected using mode altogether.This just proposes a requirement, it is necessary to using a circuit,
Allow low-pressure side that can effectively control on high-tension side N-type metal-oxide-semiconductor, while on high-tension side N-type metal-oxide-semiconductor can be similarly faced in 1 and 2
The problem of mentioning.In these three cases, totem pole configuration can not meet output requirement, and many ready-made N-type metal-oxide-semiconductors drive
IC, it appears that also do not include the structure of gate voltages limitation.
Due to the raster data model process of N-type metal-oxide-semiconductor, input capacitance of the driving source to N-type metal-oxide-semiconductor can be simply interpreted as
The charge and discharge process of (mainly grid source capacitance Cgs)；After Cgs reaches threshold voltage, N-type metal-oxide-semiconductor will enter conducting
State；After N-type metal-oxide-semiconductor turns on, Vds is begun to decline, and Id is begun to ramp up, and N-type metal-oxide-semiconductor enters saturation region at this time；But due to rice
Effect is strangled, Vgs, which can be continued for some time, no longer to be risen, and Id has reached the maximum at this time, and Vds also is continuing to decline, until rice
Le capacitance is fully charged, and Vgs rises to the value of driving voltage again, and N-type metal-oxide-semiconductor enters resistance area at this time, and Vds is thoroughly fallen at this time
Come, conducting terminates.Since miller capacitance prevents the rising of Vgs, so as to also it is prevented that the decline of Vds, can thus make damage
The time of consumption lengthens.(Vgs rises, then conducting resistance declines, so as to which Vds declines).
Since metal-oxide-semiconductor is often breakdown, to be solved to the punch-through, solution below can perform：
Firstth, the input resistance of metal-oxide-semiconductor in itself is very high, and grid source capacitance is very small, so easily by extraneous electricity
The sensing of magnetic field or electrostatic and it is charged, and a small amount of charge can form quite high voltage (U=Q/C) in interelectrode capacity, will
Damaged tubular.Although MOS input terminals have anlistatig safeguard measure, still need to carefully treat, it is most handy in storage and transport
Canister or conductive material packaging, not be placed in the chemical materials or chemical ＆ blended fabric of high pressure easy to produce static electricity.Assembling is adjusted
During examination, instrument, instrument, workbench etc. should all good earths.Damage caused by preventing the electrostatic interference of operating personnel, it is such as unsuitable
Wear nylon, chemical fibre clothes, hand or instrument preferably first connect before integrated package is contacted.Bending or artificial is aligned to device wire
During welding, the equipment used must good earth.
Secondth, the protection diode of MOS circuit input ends, current margin is generally 1mA when turning on, and is being likely to occur
During big transient state input current (more than 10mA), input protection resistor should be concatenated.An inside, which may be selected, when therefore applying protection
The metal-oxide-semiconductor of resistance should.Also since the transient energy of protection circuit absorption is limited, too big twinkling signal and excessively high electrostatic electricity
Pressure will make protection circuit ineffective.So during welding electric iron must reliable ground, with anticreep breakdown device input terminal, one
As in use, welded after can powering off using the waste heat of electric iron, and first weld its ground pin.
MOS is voltage driven element, very sensitive to voltage, and hanging G is easy to receive external disturbance to turn on MOS, outside
Portion's interference signal charges to G-S junction capacity, this small charge can store for a long time.The in test hanging danger closes of G,
It is many that just as such booster, G connect a pull down resistor over the ground, bypass interference signal would not be led directly to, generally can with 10~
20K.This resistance is known as resistance, effect 1：Bias voltage is provided for field-effect tube；Effect 2：Play the work of bleed off resistance
With (protection grid G~source S).First is made good use of understanding, explains the principle of second effect here：Protect grid G
~source S：The resistance value of the G-S interpolars of field-effect tube is very big, his G-S poles can be so made as long as having a small amount of electrostatic
Between equivalent capacity both ends generate very high voltage, if these a small amount of static discharges are fallen not in time, the high pressure at his both ends
It is possible to that field-effect tube is made to generate malfunction, it could even be possible to puncturing its G-S pole；At this moment the resistance added between grid and source electrode
With regard to above-mentioned static discharge can be fallen, so as to play the role of protecting field-effect tube.
In a preferred embodiment, anti-surge circuit be arranged on an antisurge module in, input terminal VIN, output terminal VOUT and
For adjustable voltage current potential for the port outside antisurge module, the ground terminal being connected with the anode of surge diode is arranged on anti-wave
Gush the port outside module.By modular setting, when user is needed using the anti-surge circuit, it is only necessary to which outside is set
It is standby, such as power supply, the port with being arranged on external is directly connected to, easy to use.
To be further ensured that voltage stabilizing, in anti-surge circuit, capacitance C, one end and the output terminal VOUT of capacitance C are further comprised
Connection, another ground connection, for capacity for 1-10 μ F or most preferably, capacity is 1 μ F.The setting of capacitance C so that rear power-off source
Output is more smooth, avoids the occurrence of due to voltage spikes.
It after above-mentioned anti-surge circuit, may be provided in a surge pipe, and the surge pipe be mounted on electrical equipment
Afterwards, it is connected with power supply, while suppressor pulse electric current, protection power source port.
It should be noted that the embodiment of the present invention has preferable implementation, and not the present invention is made any type of
Limitation, any one skilled in the art change or are modified to possibly also with the technology contents of the disclosure above equivalent effective
Embodiment, as long as without departing from the content of technical solution of the present invention, what technical spirit according to the invention made above example
Any modification or equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (8)
1. a kind of anti-surge circuit, including input terminal VIN and output terminal VOUT, an electric current flows into institute from the input terminal VIN
It states in anti-surge circuit and is exported from the output terminal VOUT, which is characterized in that
The anti-surge circuit further includes：
Surge diode, the plus earth of the surge diode, cathode are connected with the input terminal VIN, and the electric current is through institute
Surge diode clamp is stated to a first voltage；
N-type metal-oxide-semiconductor, the source electrode of the N-type metal-oxide-semiconductor are connected with the cathode of the surge diode, grid and antisurge electricity
The adjustable voltage current potential connection on road, drain electrode are connected with the output terminal VOUT；
When the surge pulse of the electric current is more than the first voltage, the surge pulse is less than the driving of the N-type metal-oxide-semiconductor
The electric current is isolated in voltage Vgs, the N-type metal-oxide-semiconductor shut-off.
2. anti-surge circuit as described in claim 1, which is characterized in that
The anti-surge circuit is arranged in an antisurge module, and the input terminal VIN, output terminal VOUT and adjustable voltage current potential are
Port outside the antisurge module.
3. anti-surge circuit as claimed in claim 2, which is characterized in that
The ground terminal being connected with the anode of the surge diode is the port outside the antisurge module.
4. anti-surge circuit as described in claim 1, which is characterized in that
The anti-surge circuit further includes：
Capacitance C, one end of the capacitance C are connected with the output terminal VOUT, another ground connection.
5. anti-surge circuit as claimed in claim 4, which is characterized in that
The capacity of the capacitance C is 1-10 μ F.
6. anti-surge circuit as claimed in claim 5, which is characterized in that
The capacity of the capacitance C is 1 μ F.
7. a kind of surge pipe, which is characterized in that including such as claim 1-6 any one of them anti-surge circuit.
8. a kind of electrical equipment, including power supply, which is characterized in that the power supply is connected with surge pipe as described in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711444201.0A CN108075457A (en) | 2017-12-27 | 2017-12-27 | A kind of anti-surge circuit, surge pipe and the electrical equipment with the surge pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711444201.0A CN108075457A (en) | 2017-12-27 | 2017-12-27 | A kind of anti-surge circuit, surge pipe and the electrical equipment with the surge pipe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108075457A true CN108075457A (en) | 2018-05-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711444201.0A Pending CN108075457A (en) | 2017-12-27 | 2017-12-27 | A kind of anti-surge circuit, surge pipe and the electrical equipment with the surge pipe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108075457A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116613720A (en) * | 2023-07-20 | 2023-08-18 | 江苏展芯半导体技术有限公司 | Surge protector |
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| CN101162840A (en) * | 2006-10-11 | 2008-04-16 | 大唐移动通信设备有限公司 | Interface protective circuit |
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| CN101895195A (en) * | 2010-07-01 | 2010-11-24 | 中国航天科技集团公司第九研究院第七七一研究所 | Ultrahigh pressure signal interface circuit |
| CN102097777A (en) * | 2009-12-10 | 2011-06-15 | 上海晨兴希姆通电子科技有限公司 | Input voltage limiting protection circuit and method thereof |
| CN103023307A (en) * | 2012-12-28 | 2013-04-03 | 上海派芬自动控制技术有限公司 | On-off input circuit and controller |
| CN203691022U (en) * | 2014-01-26 | 2014-07-02 | 江苏博强新能源科技有限公司 | Overvoltage impact preventing battery management system protection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08186229A (en) * | 1994-12-28 | 1996-07-16 | Oki Electric Ind Co Ltd | Rectifying circuit and ic card system where it is mounted |
| TWI306251B (en) * | 2004-06-18 | 2009-02-11 | Tian Holdings Llc | System of sampleing interface for pick-up head |
| CN101162840A (en) * | 2006-10-11 | 2008-04-16 | 大唐移动通信设备有限公司 | Interface protective circuit |
| CN201037608Y (en) * | 2007-04-17 | 2008-03-19 | 李杨华 | LED energy-saving lamp device |
| CN102097777A (en) * | 2009-12-10 | 2011-06-15 | 上海晨兴希姆通电子科技有限公司 | Input voltage limiting protection circuit and method thereof |
| CN101895195A (en) * | 2010-07-01 | 2010-11-24 | 中国航天科技集团公司第九研究院第七七一研究所 | Ultrahigh pressure signal interface circuit |
| CN103023307A (en) * | 2012-12-28 | 2013-04-03 | 上海派芬自动控制技术有限公司 | On-off input circuit and controller |
| CN203691022U (en) * | 2014-01-26 | 2014-07-02 | 江苏博强新能源科技有限公司 | Overvoltage impact preventing battery management system protection device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116613720A (en) * | 2023-07-20 | 2023-08-18 | 江苏展芯半导体技术有限公司 | Surge protector |
| CN116613720B (en) * | 2023-07-20 | 2023-09-29 | 江苏展芯半导体技术有限公司 | Surge protector |
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Application publication date: 20180525 |
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