CN108075352A - Laser and preparation method thereof - Google Patents
Laser and preparation method thereof Download PDFInfo
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- CN108075352A CN108075352A CN201711308668.2A CN201711308668A CN108075352A CN 108075352 A CN108075352 A CN 108075352A CN 201711308668 A CN201711308668 A CN 201711308668A CN 108075352 A CN108075352 A CN 108075352A
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- grating
- duty cycle
- layer
- uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
This disclosure relates to which semiconductor laser, provides a kind of laser and preparation method thereof, the laser includes：Substrate；Active layer, on the substrate；Grating layer, on the active layer, the uniform grating with the first duty cycle and the uniform grating with the second duty cycle positioned at second area, the first area and the second area that the grating layer is included positioned at first area are adjacent；The uniform grating with the first duty cycle can transmit the light of phase co-wavelength with the uniform grating with the second duty cycle.On the one hand the optical wavelength transmitted using the grating of two kinds of different duties is overlapped, so that the excitation wavelength of laser obtains minimum gain for threshold value, obtain good single-mode output spectrum, on the other hand use and do not change holographic exposure technique, the uniform grating of different duty is only realized by changing etching technics, it avoids using phase-shifting technique with high costs, simplifies technological process, reduce manufacture cost.
Description
Technical field
This disclosure relates to semiconductor laser, more particularly to a kind of laser, the preparation method of laser.
Background technology
In fiber optic communication, semiconductor laser due to it is small, efficient, low in energy consumption, be easily integrated the advantages that, it is wide
It is general to be applied in optical communication field, and laser is due to its single-mode output, output spectrum is narrow, effectively reduces light and passes in a fiber
Dispersive broadening caused by defeated is suitble to apply in High Speed Modulation and long-distance optical fiber communication.
At present, uniform grating laser can have identical after anti-reflection film is plated at end face both ends there are the longitudinal wave of two degeneracys
Gain, when both ends of the surface have asymmetric plated film this gain can be eliminated, since excitation wavelength depends on end face reflection rate
Size and random phase, therefore uniform grating single mode laser yield rate is low.In order to improve light device single mode yield, generally use
Phase-shifted grating substitutes uniform grating.But prepared by the particle write-through (such as EBL) of current generally use phase-shifted grating rate is slow, efficiency
It is low and of high cost, and phase-shifted grating can cause light field serious uneven distribution inside chip of laser, and then can generate
More serious effects of spatial reduces the stability of the output wavelength of laser.
In consideration of it, the acquisition how to be simple and efficient is this field urgent need to resolve with the laser of single-mode output characteristic is stablized
The technical issues of.
It should be noted that information is only used for strengthening the reason to the background of the disclosure disclosed in above-mentioned background section
Solution, therefore can include not forming the information to the prior art known to persons of ordinary skill in the art.
The content of the invention
The disclosure is designed to provide a kind of laser and preparation method thereof, so overcome at least to a certain extent by
One or more problem caused by the limitation of correlation technique and defect.
Other characteristics and advantage of the disclosure will be by the following detailed description apparent from or partially by the disclosure
Practice and acquistion.
According to the disclosure in a first aspect, providing a kind of laser, which is characterized in that including：
Substrate；
Active layer, on the substrate；
Grating layer, on the active layer, the grating layer includes having first duty cycle positioned at first area
Uniform grating and the uniform grating with the second duty cycle positioned at second area, and the first area and the second area
It is adjacent；
The uniform grating with the first duty cycle can transmit phase with the uniform grating with the second duty cycle
The light of co-wavelength.
According to the second aspect of the disclosure, a kind of preparation method of laser is provided, which is characterized in that including：
Sequentially form active layer and grating material layer on substrate, the grating material layer be divided into first area and with it is described
The adjacent second area in first area；
Silicon dioxide layer and the first protective layer, patterning first protection are sequentially formed on the grating material layer
Layer, to form uniform grating figure；
The silicon dioxide layer is etched, forms the hard mask layer with uniform grating figure, and removes first protection
Layer；
The second protective layer is formed on the hard mask layer, second protective layer is correspondingly arranged with the second area；
The grating material layer is etched, to form the uniform grating with the first duty cycle in the first area；
The 3rd protective layer is formed on the hard mask layer, the 3rd protective layer is correspondingly arranged with the first area；
The grating material layer is etched, to form the uniform grating with the second duty cycle in the second area；
The uniform grating with the first duty cycle can transmit phase with the uniform grating with the second duty cycle
The light of co-wavelength.
As shown from the above technical solution, laser in disclosure exemplary embodiment and preparation method thereof at least possess with
Lower advantage and good effect：
The laser of the disclosure includes substrate, the active layer on substrate and the grating layer on active layer, grating
Layer includes the uniform grating with the first duty cycle and the uniform grating with the second duty cycle, described to have the first duty cycle
Uniform grating and the uniform grating with the second duty cycle can transmit the light of phase co-wavelength.Laser in the disclosure,
On the one hand the optical wavelength transmitted using the grating of two kinds of different duties is overlapped so that the excitation wavelength of laser obtains minimum
Gain for threshold value, obtain good single-mode output spectrum, on the other hand still use and do not change holographic exposure technique, only pass through
The uniform grating that etching technics realizes different duty is adjusted, avoids using phase-shifting technique with high costs, simplifies technique
Flow reduces manufacture cost.
The disclosure it should be appreciated that more than general description and following detailed description be only exemplary and explanatory
, the disclosure can not be limited.
Description of the drawings
Attached drawing herein is merged in specification and forms the part of this specification, shows the implementation for meeting the disclosure
Example, and for explaining the principle of the disclosure together with specification.It should be evident that the accompanying drawings in the following description is only the disclosure
Some embodiments, for those of ordinary skill in the art, without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows uniform grating transmitted spectrum in the prior art；
Fig. 2 shows the uniform grating transmitted light spectrogram under different duty in the prior art；
Fig. 3 shows the simulation output spectrogram of two sections of uniform gratings when duty cycle is 0.6 and 0.8；
Fig. 4 shows the structure diagram of laser in the disclosure；
Fig. 5 A show the structure diagram of this field phase-shifted grating；
Fig. 5 B show the structure diagram of grating layer in the disclosure；
Fig. 6 shows the preparation method flow chart of laser in the disclosure；
Fig. 7 shows to form the method flow diagram with uniform grating graphic mask layer in the disclosure；
Fig. 8 shows the structural representation that the first duty cycle uniform grating and the second duty cycle uniform grating are formed in the disclosure
Figure；
Fig. 9 shows the structural representation that the first duty cycle uniform grating and the second duty cycle uniform grating are formed in the disclosure
Figure.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described feature, knot
Structure or characteristic can be in any suitable manner incorporated in one or more embodiments.In the following description, provide perhaps
More details fully understand embodiment of the present disclosure so as to provide.It it will be appreciated, however, by one skilled in the art that can
One or more in the specific detail are omitted with technical solution of the disclosure or others side may be employed
Method, constituent element, device, step etc..In other cases, be not shown in detail or describe known solution to avoid a presumptuous guest usurps the role of the host and
So that all aspects of this disclosure thicken.
In this specification using term "one", " one ", "the" and " described " to represent there are one or more elements/
Component/etc.；Term " comprising " and " having " is representing the open meaning being included and refer to except listing
Element/component/also may be present outside waiting other element/component/etc.；Term " first " and " second " etc. are only made
It is used for mark, is not the quantity limitation to its object.
In addition, attached drawing is only the schematic illustrations of the disclosure, it is not necessarily drawn to scale.Identical attached drawing mark in figure
Note represents same or similar part, thus will omit repetition thereof.Attached some block diagrams shown in figure are work(
Can entity, not necessarily must be corresponding with physically or logically independent entity.
Fig. 1 shows the transmitted spectrum of uniform grating in typical laser in correlation technique, wherein λBFor Bradley lattice wave
It is long, positioned at forbidden band centre position, can not be observed in actual transmission spectrum；λ-1With λ+1Respectively laser bimodulus lasing when
Possibility excitation wavelength.Bragg wavelengthsBIt is determined by formula (1)：
λB=2 × neff×Λ (1)
Wherein neffFor the effective refractive index of grating layer, Λ is the cycle of uniform grating.
From formula (1), in the case where the uniform grating cycle is certain, cloth can be realized by finely tuning effective refractive index
Glug wavelength continuously adjusts.And grating layer needs to be buried using cap rock in preparation process, and grating layer and cap rock it
Between there are significant refractive index difference, (e.g., the refractive index for the InGaAsP that grating layer uses is 3.4, and the InP foldings that cap rock uses
The rate of penetrating is generally 3.2-3.3), this duty cycle for allowing for grating layer directly determines entire grating layer after the completion of cap rock growth
The size of effective refractive index.The effective refractive index of grating layer can be estimated by formula (2) weighted average：
Wherein, γ be uniform grating duty cycle, ninpFor grating cap rock refractive index, ngratingFor grating layer refractive index.
From formula (1) (2), the effective refractive index of grating layer can be carried out by continuously adjusting the size of duty cycle
It is continuous to change, and then continuously adjust bragg wavelength realization.
Fig. 2 shows the transmitted spectrum of uniform grating in laser under different duty.Specifically, laser is distribution
Feedback laser has Bragg grating.It can be seen that with the increase of grating duty cycle, bragg wavelength is substantially to long wave side
To movement.When duty cycle difference selection is suitable, bragg wavelength displacement distance causes the λ before bragg wavelength movement just+1
Excitation wavelength and the λ after bragg wavelength movement-1Excitation wavelength overlaps, and excitation wavelength is made to obtain minimum gain for threshold value, thus
Laser is allow to realize stable single-mode output, i.e.,：
Wherein,WithFor corresponding respective excitation mode wavelength under different effective refractive indexs；WithFor difference
The effective refractive index of corresponding grating layer under duty cycle；SB1With SB2For the energy gap under different duty.
Formula (3) it is equal with formula (4) to get：
Formula (5) and formula (2) simultaneous, you can acquire the difference for the uniform grating duty cycle that can realize single mode emission.
According to above-mentioned principle, by simply simulating calculating, it is 0.6 and 0.8 lower two sections of uniform lights to obtain in duty cycle
The output spectrum of the laser of grid, as shown in figure 3, it can be seen that, under the different duty cycle of above two, chip of laser obtains
Obtained good single-mode output spectrum.
It was found from above-mentioned principle analysis, by estimating the difference for the uniform grating duty cycle for obtaining suitable single mode emission,
The uniform grating of two sections of different duties is formed using the etching technics of different parameters in the grating layer of laser, may be such that sharp
Light device obtains stable single-mode output spectrum.
According to above-mentioned principle, a kind of laser is provided firstly in this example embodiment, as shown in figure 4, laser 400
Including：Substrate 401, active layer 402 and grating layer 403, the active layer 402 are located on the substrate 401, grating layer 403
In on the active layer 402, and grating layer 403 divides for first area D1 and the second area D2 adjacent with first area D1, with
The corresponding grating of the first area D1 is the uniform grating with the first duty cycle, grating corresponding with the second area D2
To have a uniform grating of the second duty cycle, the uniform grating with the first duty cycle is with described with the second duty cycle
Uniform grating can transmit the light of phase co-wavelength.
Two parts that grating layer is arranged to have different duty by the laser in the disclosure, and different duty is equal
The optical wavelength of even grating transmission is identical, and the excitation wavelength of laser can be made to obtain minimum gain for threshold value, improve laser list
The stability of mould output.
In disclosure exemplary embodiment, the wavelength of the light of uniform grating with the first duty cycle transmission with the
The wavelength components of the light of the uniform grating transmission of two duty cycles are overlapped or all overlapped.
Further, uniform grating can have arbitrary shape, and preferably described uniform grating is even strip-shaped grating.
Generally use phase-shifted grating in laser, Fig. 5 A show the structure of phase-shifted grating, and phase-shifted grating includes the first light
501 and second grating 502 of grid is provided with phase-shifted region G between the first grating 501 and the second grating 502；Fig. 5 B show this public affairs
The structure of middle grating layer is opened, grating layer includes first area D1 and second area D2, and first area D1, which is corresponded to, has the first duty
The uniform grating of ratio, second area D2 correspond to the uniform grating with the second duty cycle.Compared with the phase-shifted grating in Fig. 5 A, figure
First area D1 and second area D2 in 5B are continuous two regions, therebetween there is no phase-shifted region, i.e., with first
The uniform grating of duty cycle and uniform grating with the second duty cycle are connected together, and form a complete light
Grid.
This example embodiment additionally provides a kind of preparation method of laser, and Fig. 6 shows the specific of the preparation method
Flow：
S1：Active layer 602 and grating material layer 603 are sequentially formed on substrate 601, the grating material layer 603, which divides, is
The first area D1 and second area D2 adjacent with the first area；
The substrate 601 can be monocrystalline silicon or polysilicon, preferably by monocrystalline silicon.The active layer 602 can be
The single quantum well or multi-quantum pit structure formed using material commonly used in the art, for example, may be employed A1GaAs, InGaAs,
The materials such as InAs, GaAs, InGaAl, InGaAs form active layer 602.The material of the grating material layer 603 can be
InGaAsP can also use other materials commonly used in the art to make grating, and details are not described herein.S2：In the grating material
604 and first protective layer 605 of silicon dioxide layer is sequentially formed on layer 603, patterns first protective layer 605, it is equal to be formed
Even raster graphic；
S3：The silicon dioxide layer 604 is etched, the hard mask layer 604 ' with uniform grating figure is formed, and removes institute
State the first protective layer 605；
In order to form uniform grating on grating material layer 603, it is necessary first to this is formed in silicon dioxide layer 604 uniformly
Raster graphic.The specific method of the hard mask layer 604 ' with uniform grating figure is formed referring to Fig. 7, first in the lining
A silicon dioxide layer 704 is grown on grating material layer 703 on bottom 701, the thickness of the silicon dioxide layer 704 is 10-
100nm, it is therefore preferable to 30-50nm；The first protective layer 705, first protective layer are coated in the silicon dioxide layer 704
705 be preferably photoresist, thickness 90-110nm；Then uniform light is formed on the first protective layer 705 using photoetching process
Gate figure, the photoetching process can be photoetching technique commonly used in the art, preferably by holographic exposure technique；Finally by
Uniform grating figure on first protective layer 705 is transferred to silicon dioxide layer 704 by etching technics, and the etching technics can
To be that dry etching can also be wet etching, it is preferred to use RIE dry etch process；Finally remove the first protective layer 705.
S4：The second protective layer 606, second protective layer 606 and described second are formed on the hard mask layer 604 '
Region D2 is correspondingly arranged；
S5：The grating material layer 603 is etched, to form the uniform light with the first duty cycle in the first area D1
Grid；
S6：The 3rd protective layer 607, the 3rd protective layer 607 and described first are formed on the hard mask layer 604 '
Region D1 is correspondingly arranged；
S7：The grating material layer 603 is etched, to form the uniform light with the second duty cycle in the second area D2
Grid.
Fig. 8 shows a kind of technique stream that the first duty cycle and the second duty cycle uniform grating are formed in grating material layer
Journey, may be employed the second protective layer 606 will part have uniform grating figure hard mask layer 604 ' cover, the part of masking with
The second area D2 of the grating material layer 603 is corresponded to, then by not having uniform grating by what the second protective layer 606 covered
The hard mask layer 604 ' of figure performs etching grating material layer 603, has first to be formed in the grating material layer 603
The uniform grating of duty cycle, and remove the second protective layer 606；Then the first duty cycle will be formed using the 3rd protective layer 607
The corresponding first area D1 maskings of uniform grating, by the way that not there is no the hard of uniform grating figure by what the 3rd protective layer 607 covered
Mask layer 604 ' performs etching grating material layer 603, is formed in the grating material layer 603 equal with the second duty cycle
Even grating finally removes the 3rd protective layer 607.
Meanwhile Fig. 9 shows that another kind forms the first duty cycle and the work of the second duty cycle uniform grating in grating layer
Skill flow can coat one layer of common positive photoresist 608 on the hard mask layer 604 ' with uniform grating figure, it is exposed
Photodevelopment exposes hard mask layer 604 ' corresponding with the first area D1 of grating material layer 603, by etching the part exposed
The uniform grating with the first duty cycle is formed in grating material layer 603；After removing photoresist 608, in hard mask layer 604 '
One layer of common positive photoresist 609 of upper re-coating, makes its exposure imaging corresponding with the second area D2 of grating material layer 603
Hard mask layer 604 ' exposes, and has the uniform of the second duty cycle by etching the part exposed and being formed in grating material layer 603
Grating finally removes photoresist 609.
Further, leaching may be employed in the second protective layer 606, the 3rd protective layer 607 and common positive photoresist 608,609
Stain, spraying, the method for spin coating are formed, preferably by spin-coating method on the mask layer 604 ' with uniform grating figure shape
Into.The forming method of the uniform grating of first duty cycle and the second duty cycle can be wet etching or dry etching,
It is preferred that using ICP dry etch process.
In an exemplary embodiment of the disclosure, the first duty cycle in grating layer is 0.5-0.6, and the second duty cycle is
0.7-0.8.The etching technics of the uniform grating for having the first duty cycle can be set as：Etch power 80-120W, methane
Flow 10-50sccm, hydrogen flowing quantity 50-150sccm, oxygen flow 1-3sccm, etch period 60-108s；It is described to have second
The etching technics of the uniform grating of duty cycle can be set as：Etch power 40-100W, boron chloride flow 1-30sccm, chlorine
Throughput 1-5sccm, argon flow amount 10-60sccm, the etching of etch period and the uniform grating with the first duty cycle
Time is identical.Wherein etch period is according to the different and different of etching depth.
The disclosure does not change existing holographic exposure technique, and the equal of different duty is realized by adjusting etch process parameters
The making of even grating so that index steps variation is generated in uniform grating, reaches single-mode output.Pass through the laser in the disclosure
The preparation method of device can ensure the good single-mode output of laser, and reduce technological process, reduce manufacture cost.
It will be appreciated by those skilled in the art that above-mentioned technological parameter is merely to forming certain depth and duty cycle and being respectively
The uniform grating of 0.5-0.6 and 0.7-0.8 is not the restriction to the disclosed invention content.According to the difference of duty cycle and quarter
The difference of depth is lost, etching technics also answers adaptive change, and details are not described herein.
In an exemplary embodiment of the disclosure, uniform grating with the first duty cycle is formed and with the second duty cycle
Uniform grating after, the buffered oxide etch liquid removal mask layer 604 ' with uniform grating figure can be used.
In the example embodiment of the disclosure, the laser can include substrate, buffer layer, lower limitation from bottom to up
Layer, lower waveguide layer, active area, upper ducting layer, grating layer, the second limiting layer, covering, ohmic contact layer, electrode layer, by this public affairs
The preparation method for opening laser forms uniform grating with the first duty cycle and with the second duty cycle on grating layer
The uniform grating of uniform grating, the first duty cycle and the second duty cycle can transmit the light of phase co-wavelength so that in the disclosure
Laser obtains good single-mode output spectrum.
Those skilled in the art will readily occur to the disclosure its after considering specification and putting into practice invention disclosed herein
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or
Person's adaptive change follows the general principle of the disclosure and including the undocumented common knowledge in the art of the disclosure
Or conventional techniques.Description and embodiments are considered only as illustratively, and the true scope and spirit of the disclosure are by appended
Claim is pointed out.
It should be appreciated that the present disclosure is not limited to the precise structures that have been described above and shown in the drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present disclosure is only limited by appended claim.
Claims (9)
1. a kind of laser, which is characterized in that including：
Substrate；
Active layer, on the substrate；
Grating layer, on the active layer, the grating layer includes having the uniform of the first duty cycle positioned at first area
Grating and the uniform grating with the second duty cycle positioned at second area, the first area and the second area are adjacent；
The uniform grating with the first duty cycle can transmit identical ripple with the uniform grating with the second duty cycle
Long light.
2. laser according to claim 1, which is characterized in that first duty cycle is 0.5-0.6, and described second accounts for
Sky is than being 0.7-0.8.
3. a kind of preparation method of laser, which is characterized in that including：
Sequentially form active layer and grating material layer on substrate, the grating material layer is divided into first area and with described first
The adjacent second area in region；
Silicon dioxide layer and the first protective layer are sequentially formed on the grating material layer, patterns first protective layer, with
Form uniform grating figure；
The silicon dioxide layer is etched, the hard mask layer with uniform grating figure is formed, and removes first protective layer；
The second protective layer is formed on the hard mask layer, second protective layer is correspondingly arranged with the second area；
The grating material layer is etched, to form the uniform grating with the first duty cycle in the first area；
The 3rd protective layer is formed on the hard mask layer, the 3rd protective layer is correspondingly arranged with the first area；
The grating material layer is etched, to form the uniform grating with the second duty cycle in the second area；
The uniform grating with the first duty cycle can transmit identical ripple with the uniform grating with the second duty cycle
Long light.
4. the preparation method of laser according to claim 3, which is characterized in that first protective layer is photoresist
Layer, uniform grating figure is formed by holographic exposure technique on first protective layer.
5. the preparation method of laser according to claim 3, which is characterized in that using sense coupling
Method forms the uniform grating with the first duty cycle and the uniform grating with the second duty cycle.
6. the preparation method of laser according to claim 5, which is characterized in that first duty cycle is 0.5-0.6,
Second duty cycle is 0.7-0.8.
7. the preparation method of laser according to claim 5 or 6, which is characterized in that described that there is first duty cycle
The etching parameters of uniform grating are：Etch power 80-120W, methane flow 10-50sccm, hydrogen flowing quantity 50-150sccm, oxygen
Throughput 1-3sccm, etch period 60-108s.
8. the preparation method of the laser according to claim 6 or 7, which is characterized in that described that there is second duty cycle
The etching parameters of uniform grating are：Etch power 40-100W, boron chloride flow 1-30sccm, chlorine flowrate 1-5sccm, argon
Throughput 10-60sccm, etch period are identical with the etch period of the uniform grating with the first duty cycle.
9. the preparation method of laser according to claim 3, which is characterized in that after forming grating layer, using buffering oxygen
Compound etching liquid removes the hard mask layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086085A (en) * | 2019-05-06 | 2019-08-02 | 福建中科光芯光电科技有限公司 | A kind of DFB semiconductor laser chip |
| CN116400504A (en) * | 2023-03-16 | 2023-07-07 | 嘉兴驭光光电科技有限公司 | Diffraction optical waveguide, design method of diffraction optical waveguide and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090053656A1 (en) * | 2007-08-23 | 2009-02-26 | Masaki Yanagisawa | Process to form a mold of nanoimprint technique for making diffraction grating for DFB-LD |
| CN102570300A (en) * | 2012-02-28 | 2012-07-11 | 常州工学院 | Asymmetric sampling grating semiconductor laser and manufacture method thereof |
| CN107332104A (en) * | 2016-04-28 | 2017-11-07 | 苏州旭创科技有限公司 | Unsymmetric structure phase-shifted grating and DFB semiconductor laser |
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- 2017-12-11 CN CN201711308668.2A patent/CN108075352B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090053656A1 (en) * | 2007-08-23 | 2009-02-26 | Masaki Yanagisawa | Process to form a mold of nanoimprint technique for making diffraction grating for DFB-LD |
| CN102570300A (en) * | 2012-02-28 | 2012-07-11 | 常州工学院 | Asymmetric sampling grating semiconductor laser and manufacture method thereof |
| CN107332104A (en) * | 2016-04-28 | 2017-11-07 | 苏州旭创科技有限公司 | Unsymmetric structure phase-shifted grating and DFB semiconductor laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086085A (en) * | 2019-05-06 | 2019-08-02 | 福建中科光芯光电科技有限公司 | A kind of DFB semiconductor laser chip |
| CN116400504A (en) * | 2023-03-16 | 2023-07-07 | 嘉兴驭光光电科技有限公司 | Diffraction optical waveguide, design method of diffraction optical waveguide and display device |
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| Publication number | Publication date |
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| CN108075352B (en) | 2020-01-24 |
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