CN108074829A - Characterization equipment based on FTIR - Google Patents
Characterization equipment based on FTIR Download PDFInfo
- Publication number
- CN108074829A CN108074829A CN201610987721.5A CN201610987721A CN108074829A CN 108074829 A CN108074829 A CN 108074829A CN 201610987721 A CN201610987721 A CN 201610987721A CN 108074829 A CN108074829 A CN 108074829A
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- CN
- China
- Prior art keywords
- ftir
- chip
- equipment based
- characterization equipment
- infrared light
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The present invention provides a kind of characterization equipment based on FTIR, by newly-increased two and the inclined movable mirror of horizontal plane, infrared light are made to reach detector and is converted into before digital signal, chip is passed twice through, adds luminous flux；Based on same principle, in addition the present invention has also increased the method for a V-type mirror newly to increase luminous flux.Infrared light passes twice through chip and increases the amount that the chip absorbs infrared light, the susceptibility of concentration of carbon enables characterization equipment to be detected in the case where not increasing the wafer thickness to concentration of carbon therein in can so enhancing in the case where wafer thickness remains unchanged to the chip.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of characterization equipment based on FTIR.
Background technology
Existing FTIR (fourier conversion infrared spectrum analysis instrument) structure diagram is as shown in Figure 1, mainly include light source
10th, interferometer 11, detector 12 and two speculums 13 and 14.After the light source 10 sends infrared light by the interferometer 11
It incides on chip 15；The detector 12 is used to detect through the infrared light after the chip 15.Since FTIR has non-connect
The advantages that touching property and nonstaining property, in semiconductor applications, FTIR has been widely used for as characterization tool on detection chip
The concentration of carbon and oxygen.With the development of integrated circuit, in order to avoid the influence that chip generates integrated circuit production yield, chip
On concentration of carbon have to control in low-down scope, so characterization tool necessarily exhibits concentration of carbon better property
Energy.
If concentration of carbon is less than 0.1ppma on chip, up to the present most common method is exactly to increase the chip
Thickness.FTIR can detect low carbon concentration (less than the 0.1ppma) chip of thickness more than 1.5mm, but cannot detect excessively thin
Chip.In addition, the service life of the FTIR boards with automated system can be reduced by detecting blocked up chip.
The content of the invention
It is an object of the invention to provide a kind of characterization equipment based on FTIR, can not be examined with solving existing FTIR equipment
The problem of surveying the concentration of carbon on LED reverse mounting type.
In order to solve the above technical problems, the present invention provides a kind of characterization equipment based on FTIR, it is removable anti-including two
Penetrate mirror, described two movable mirrors are tilted with horizontal plane, for by the infrared light reflection to chip.
Optionally, in the characterization equipment based on FTIR, the characterization equipment further includes motor, for driving
Two movable mirrors are stated to move in horizontal plane.
Optionally, in the characterization equipment based on FTIR, the characterization equipment further includes light source, interferometer, detection
Device and two speculums, the light source send infrared light by being reflected into after the interferometer through speculum on chip；The spy
Device is surveyed for detecting through the infrared light after the chip.
Optionally, in the characterization equipment based on FTIR, the surface deposition of described two movable mirrors has material
Expect nickel.
Optionally, in the characterization equipment based on FTIR, described two movable mirrors are inclined in horizontal plane
Angle is 0 °~90 °.
Optionally, in the characterization equipment based on FTIR, described two movable mirrors are inclined in horizontal plane
Angle is 45 °.
Optionally, in the characterization equipment based on FTIR, the distance between described two movable mirror centers is big
In 1 centimetre.
The present invention also provides another the characterization equipment based on FTIR, including a V-type mirror, for will be described infrared
Light reflection is on the chip.
Optionally, in the characterization equipment based on FTIR, the surface deposition of the V-type mirror has material nickel.
Optionally, in the characterization equipment based on FTIR, the angle of the V-type mirror is 90 °.
Optionally, in the characterization equipment based on FTIR, the V-type mirror the inclined angle of horizontal plane be 0 °~
90°。
Optionally, in the characterization equipment based on FTIR, the V-type mirror is 45 ° in the inclined angle of horizontal plane.
In the characterization equipment provided by the invention based on FTIR, two and the inclined removable reflection of horizontal plane have been increased newly
Mirror adds luminous flux, before infrared light arrival detector is converted into digital signal, passes twice through chip；Based on similary
Principle, in addition the present invention increased a V-type mirror newly, infrared light, which passes twice through chip and increases the chip, absorbs infrared light
Amount, increase absorb infrared light amount can in enhancing in the case that wafer thickness remains unchanged is to the chip concentration of carbon it is quick
Sensitivity enables characterization equipment to be detected in the case where not increasing the wafer thickness to concentration of carbon therein.
Description of the drawings
Fig. 1 is the existing characterization device structure schematic diagram based on FTIR；
Fig. 2 is the characterization device structure schematic diagram based on FTIR that the embodiment of the present invention one provides；
Fig. 3 is the characterization device structure schematic diagram provided by Embodiment 2 of the present invention based on FTIR；
Fig. 4 is the characterization device structure schematic diagram based on FTIR that the embodiment of the present invention three provides.
Specific embodiment
The characterization equipment proposed by the present invention based on FTIR is made below in conjunction with the drawings and specific embodiments further detailed
Explanation.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is adopted
With very simplified form and using non-accurate ratio, only to convenience, the embodiment of the present invention is lucidly aided in illustrating
Purpose.
Embodiment one
Fig. 2 is the structure diagram for the characterization equipment based on FTIR that the embodiment of the present invention one provides, and utilizes infrared light table
The concentration of carbon in chip is levied, the characterization equipment based on FTIR includes two movable mirrors 23 and 24, moves reflection
Mirror 23 and movable mirror 24 are tilted with horizontal plane, for the infrared light reflection to be returned to chip.It is and described removable
Dynamic speculum 23 and the movable mirror 24 are all connected on motor 25, and the motor 25 is described removable for driving
The movement of speculum 23 and the movable mirror 24 in horizontal plane is moved, to change infrared light incidence position on the wafer
It puts.
Specifically, the characterization equipment based on FTIR further includes light source 20, interferometer 21, detector 22 and two reflections
Mirror, described two speculums are respectively the first speculum 26 and the second speculum 27, for changing the incident direction of infrared light.Institute
It states light source 20 and sends infrared light after during 26 side of change of the first speculum is back into the interferometer 21 using institute
The second speculum 27 is stated to be reflected on chip 28；The detector 22 is used to detect through the infrared light after the chip 28.
Specifically, the surface of the movable mirror 23 and the movable mirror 24 has all deposited material nickel, material
Expect that nickel has excellent corrosion-resistant, high temperature resistance and higher reflectance factor, it is made also in the rugged environments such as humidity
Good perform function.
Specifically, the center of the movable mirror 23 and the distance between the center of the movable mirror 24 are big
In 1 centimetre.Because the size of infrared light hot spot is up to 5mm, in order to avoid the entire Aperture Range that is conducted by speculum
Light and the incident light effect of overlapping, in the center and the movable mirror 24 of the movable mirror 23
The distance between heart is adjusted to twice more than maximum spot size.
Preferably, the movable mirror 23 and the movable mirror 24 and the inclined angle of horizontal plane are all
45°.As shown in Fig. 2, after infrared light passes through the chip 28, it is incident in the movable mirror 23, enters by reflection
It penetrates in the movable mirror 24, again passes by reflection, infrared light is incident on again on the chip 28 and passes through institute
Chip 28 is stated to be received by the detector 22.Infrared light passes twice through the chip 28, increase the chip 28 absorb it is infrared
The amount of light, increasing the amount of absorption infrared light can improve in the case where the thickness of the chip 28 remains unchanged to the chip
The susceptibility of concentration of carbon in 28.
Embodiment two
Fig. 3 is the structure diagram of the characterization equipment provided by Embodiment 2 of the present invention based on FTIR, utilizes infrared light table
The concentration of carbon in chip is levied, it, will be on the infrared light reflection to the chip 36 including a V-type mirror 33.
Specifically, the characterization equipment based on FTIR further includes light source 30, interferometer 31, detector 32 and two reflections
Mirror, described two speculums are respectively the first speculum 34 and the second speculum 35, for changing the incident direction of infrared light.Institute
It states light source 30 and sends infrared light after during 34 side of change of the first speculum is back into the interferometer 31 using institute
The second speculum 35 is stated to be reflected on chip 36；The detector 32 is used to detect through the infrared light after the chip 28.
Specifically, the surface deposition of the V-type mirror 33 has material nickel, material nickel has excellent corrosion-resistant, heat-resisting quantity
Energy and higher reflectance factor, make it also can good perform function in the rugged environments such as humidity.
Preferably, the angle of the V-type mirror 33 is 90 °, and the angle of the V-type mirror 33 and horizontal plane is 45 °.Such as figure
Shown in 3, after infrared light passes through the chip 36, it is incident on V-type mirror 33, after two secondary reflections, infrared light enters again
It penetrates on the chip 36 and is received through the chip 36 by the detector 32.Infrared light passes twice through the chip 36,
The crystalline substance is increased, 36 absorb the amount of infrared light, and the amount for increasing absorption infrared light can be in the situation that wafer thickness remains unchanged
Lower enhancing is to the susceptibility of concentration of carbon in chip.
Embodiment three
Fig. 4 is the structure diagram for the characterization equipment based on FTIR that the embodiment of the present invention three provides, and utilizes infrared light table
The concentration of carbon in chip is levied, including stationary mirror 43 and stationary mirror 44, the stationary mirror 43 and the fixation are anti-
Mirror 44 is penetrated to tilt with horizontal plane, it will be on the infrared light reflection to the chip.
Specifically, the characterization equipment based on FTIR further includes light source 40, interferometer 41, detector 42 and two reflections
Mirror, described two speculums are respectively the first speculum 45 and the second speculum 46, for changing the incident direction of infrared light.Institute
It states light source 40 and sends infrared light after during 45 side of change of the first speculum is back into the interferometer 41 using institute
The second speculum 46 is stated to be reflected on chip 47；The detector 42 is used to detect through the infrared light after the chip 47.
Specifically, the surface of the stationary mirror 43 and the stationary mirror 44 has all deposited material nickel, material nickel
With excellent corrosion-resistant, high temperature resistance and higher reflectance factor, make it also can be fine in the rugged environments such as humidity
Perform function.
Specifically, the center of the stationary mirror 43 and the distance between the center of the stationary mirror 44 are more than 1
Centimetre.Because the size of infrared light hot spot is up to 5mm, in order to avoid the entire Aperture Range that is conducted by stationary mirror
Light and the incident light effect of overlapping, the center of the stationary mirror 43 and the center of the stationary mirror 44 it
Between distance be adjusted to twice more than maximum spot size.
Preferably, the stationary mirror 43 and the stationary mirror 44 and the inclined angle of horizontal plane are all 45 °.Such as
It shown in Fig. 4, after infrared light passes through the chip 47, is incident on the stationary mirror 43, is incident on by reflection described
On stationary mirror 44, reflection is again passed by, infrared light is incident on again on the chip 47 and passes through 47 quilt of chip
The detector 42 receives.Infrared light passes twice through the chip 47 and increases the amount that the chip 47 absorbs infrared light, increases
The susceptibility of concentration of carbon during the amount of absorption infrared light can enhance in the case where wafer thickness remains unchanged to the chip.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.For system disclosed in embodiment
For, due to corresponding to the methods disclosed in the examples, so description is fairly simple, related part is referring to method part illustration
.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (12)
1. a kind of characterization equipment based on FTIR, which is characterized in that described two removable anti-including two movable mirrors
It penetrates mirror and horizontal plane to tilt, for by the infrared light reflection to chip.
2. the characterization equipment based on FTIR as described in claim 1, which is characterized in that the characterization equipment further includes electronic
Machine, for described two movable mirrors to be driven to be moved in horizontal plane.
3. the characterization equipment based on FTIR as described in claim 1, which is characterized in that it is described characterization equipment further include light source,
Interferometer, detector and two speculums, the light source send infrared light by being reflected into crystalline substance through speculum after the interferometer
On piece；The detector is used to detect through the infrared light after the chip.
4. the characterization equipment based on FTIR as described in claim 1, which is characterized in that the table of described two movable mirrors
Face deposition has material nickel.
5. the characterization equipment based on FTIR as claimed in claim 3, which is characterized in that described two movable mirrors are in water
The inclined angle of plane is 0 °~90 °.
6. the characterization equipment based on FTIR as claimed in claim 5, which is characterized in that described two movable mirrors are in water
The inclined angle of plane is 45 °.
7. the characterization equipment based on FTIR as claimed in claim 6, which is characterized in that described two movable mirror centers
Between distance be more than 1 centimetre.
8. a kind of characterization equipment based on FTIR, which is characterized in that including a V-type mirror, for the infrared light reflection to be arrived
On the chip.
9. the characterization equipment based on FTIR as claimed in claim 8, which is characterized in that the surface deposition of the V-type mirror has material
Expect nickel.
10. the characterization equipment based on FTIR as claimed in claim 9, which is characterized in that the angle of the V-type mirror is 90 °.
11. the characterization equipment based on FTIR as claimed in claim 10, which is characterized in that the V-type mirror is tilted in horizontal plane
Angle be 0 °~90 °.
12. the characterization equipment based on FTIR as claimed in claim 11, which is characterized in that the V-type mirror is tilted in horizontal plane
Angle be 45 °.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610987721.5A CN108074829A (en) | 2016-11-10 | 2016-11-10 | Characterization equipment based on FTIR |
| TW106107275A TW201829992A (en) | 2016-11-10 | 2017-03-06 | Characterization apparatus based on fourier transform infrared spectroscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610987721.5A CN108074829A (en) | 2016-11-10 | 2016-11-10 | Characterization equipment based on FTIR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108074829A true CN108074829A (en) | 2018-05-25 |
Family
ID=62154105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610987721.5A Pending CN108074829A (en) | 2016-11-10 | 2016-11-10 | Characterization equipment based on FTIR |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108074829A (en) |
| TW (1) | TW201829992A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1151858A (en) * | 1997-08-07 | 1999-02-26 | Horiba Ltd | Microscopic fourier transform infrared spectrophotometer |
| CN1975386A (en) * | 2006-11-16 | 2007-06-06 | 南京大学 | Multiple transmission-reflection measuring attachement for infrared spectrum instrument |
| CN102359948A (en) * | 2011-06-29 | 2012-02-22 | 中国科学院安徽光学精密机械研究所 | System and method for measuring greenhouse gas |
-
2016
- 2016-11-10 CN CN201610987721.5A patent/CN108074829A/en active Pending
-
2017
- 2017-03-06 TW TW106107275A patent/TW201829992A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1151858A (en) * | 1997-08-07 | 1999-02-26 | Horiba Ltd | Microscopic fourier transform infrared spectrophotometer |
| CN1975386A (en) * | 2006-11-16 | 2007-06-06 | 南京大学 | Multiple transmission-reflection measuring attachement for infrared spectrum instrument |
| CN102359948A (en) * | 2011-06-29 | 2012-02-22 | 中国科学院安徽光学精密机械研究所 | System and method for measuring greenhouse gas |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201829992A (en) | 2018-08-16 |
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Application publication date: 20180525 |