CN108074619A - A kind of method and memory for improving aerospace Rad Hard Memory storage density - Google Patents
A kind of method and memory for improving aerospace Rad Hard Memory storage density Download PDFInfo
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- CN108074619A CN108074619A CN201711288758.XA CN201711288758A CN108074619A CN 108074619 A CN108074619 A CN 108074619A CN 201711288758 A CN201711288758 A CN 201711288758A CN 108074619 A CN108074619 A CN 108074619A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/14—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements
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Abstract
The invention discloses a kind of methods and memory for improving aerospace Rad Hard Memory storage density, and storage unit is connected with the drain electrode of memory CMOS, and storage unit is three-decker, are respectively platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer；Nickel oxide in nickel oxide accumulation layer is in polycrystalline state；Loading electric field and/or magnetic field can realize the multi-stability storage of memory, realize the extension of storage state, significantly improve the storage density of aerospace Rad Hard Memory.
Description
Technical field
The present invention relates to technical field of information storage, and in particular to a kind of raising aerospace Rad Hard Memory storage density
Method and memory.
Background technology
Memory mainly completes the work(such as program storage, data buffer storage as one of core devices in aerospace electronic product
Energy.In the aircraft such as satellite, space shuttle, space station, the electronic systems such as memory needs work long hours in complicated sky
Between in radiation environment, the different particles in radiation environment generate two classes to memory to be influenced, first, total extreme, second is that
Single-particle radiation effect.Two kinds of effects all can generate defect in memory inside, and the performance of device is made slowly to degenerate, is ultimately resulted in
Mistake occurs for the logic function of circuit and system, and the permanent damages of system are likely to result in when serious.
SRAM、DRAM、PROM、E2PROM and FLASH is conventional several memories, and raying influences situation such as 1 institute of table
Show, it is found that this few class conventional memory is all vulnerable to the influence of radiation.In this regard, with resistive random access memory, phase-change random access
Memory etc. slowly emerges for the New System Rad Hard Memory of representative, and radioresistance mechanism is mainly that information stores no longer
By charge storage.
It is reported that NASA is by the portioned product of New System Rad Hard Memory applied to space computer RAD750TM's
It uses, Flouride-resistani acid phesphatase accumulated dose reaches 2M rad (Si).Resistive random access memory has as one of New System Rad Hard Memory
It is simple in structure, non-volatile, can it is highly integrated, erasable voltage is low, operating rate is fast, Flouride-resistani acid phesphatase is strong, it is low in energy consumption, can be with tradition
The advantages that CMOS technology is compatible with, it is as shown in table 1 with the radioresistance index comparison of traditional sucrose, and resistive random access memory is shown
Good capability of resistance to radiation.
1 storage medium radioresistance index contrast table of table
Since Rad Hard Memory more favors small size, low weight, dexterityization in aerospace applications, so high density stores
It is one of direction of primary study.At present, realize that the method for memory high density storage is broadly divided into three kinds：Reduce storage unit
Size, 3D stack integrated and multilevel storage.
(1) for the method for diminution memory cell size, mainly by lifting process level of processing, constantly reduce each
The volume of partial structurtes, from practical application consider, if simply by reduce device size realize miniaturization, manufacturing process
Cost can be very high, meanwhile, the too small stable storage that can be generated microeffect, be unfavorable for memory of volume.
(2) integrated method is stacked for 3D, although relevant research work achieves some achievements, but due to preparing
Technique is not mature enough, and input cost is higher, allows of no optimist in the prospect of business promotion.
(3) for the method for multilevel storage, there are two types of the means reported at present.First, by changing set process
The size of middle limitation electric current realizes more resistance state switchings；Second is that realize more resistance states by changing the voltage swing in reseting procedure
Switching.The method that the storage of memory high density is realized using electromagnetism control measures is not disclosed.
The content of the invention
In view of this, the present invention provides it is a kind of improve aerospace Rad Hard Memory storage density method and memory,
It can realize the multi-stability storage of memory, improve storage density.
Specific embodiments of the present invention are as follows：
A kind of method for improving aerospace Rad Hard Memory storage density, the drain electrode of storage unit and memory CMOS are connected
It connects, storage unit is three-decker, is respectively platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer；The nickel oxide accumulation layer
In nickel oxide be in polycrystalline state；
Electric field and/or magnetic field are loaded to change the storage state of storage unit, direction of an electric field is perpendicular to platinum electrode layer, magnetic field side
To parallel to platinum electrode layer.
Further, according to electric field and the correspondence of storage state, the variation of a upper eight storages state of storage point is realized；
According to magnetic field and the correspondence of storage state, the variation of a upper two storages state of storage point is realized；According to electric field and magnetic field with
The correspondence of state is stored, realizes the variation of a upper 16 storages state of storage point.
Further, technological parameter meets when prepared by nickel oxide accumulation layer：Oxygen pressure scope is in pulsed laser deposition cavity
1.0~1.5Torr；Pulsed laser deposition cavity inner temperature scope is 450~500 DEG C；Nickel oxide storage layer thickness for 250~
300nm。
Further, current-limiting protection is carried out when loading electric field.
A kind of aerospace Rad Hard Memory for improving storage density, the memory include storage unit, CMOS, loading list
Member and peripheral control circuits, the drain electrode connection of the storage unit and CMOS, CMOS are connected with peripheral control circuits, loading unit
Electric field and/or magnetic field are provided for storage unit, direction of an electric field is perpendicular to platinum electrode layer, and magnetic direction is parallel to platinum electrode layer；
The storage unit is three-decker, is respectively platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer；The oxidation
Nickel oxide in nickel accumulation layer is in polycrystalline state.
Advantageous effect：
1st, the method that the present invention proposes electricity, magnetic field regulation and control storage numerical value for aerospace Rad Hard Memory for the first time, is different from
The method for changing storage numerical value by charge in conventional memory, the method radiation resistance of non-charge regulation and control is stronger, this
The radioresistance research field of aerospace memory has broad application prospects；Secondly, under the action of electric field, storage can be realized
State expands to 8 states from 1 state, so as to increase storage density；Under the influence of a magnetic field, it can realize that storage state expands from 1 state
It opens up as 2 states, so as to increase storage density；Using magnetic field and the synergistic effect of electric field, a physical store o'clock can be realized from 1
A bit stores the transformation to 4 bit storages, and storage state expands to 16 states from 2 states, significantly improves the anti-spoke of aerospace
The storage density of memory is penetrated, reduces by technological level to improve the degree of dependence of storage density, aerospace carrying is reduced and accounts for
Space and cost.
2nd, the preparation process of the invention by improving storage unit so that the nickel content of nickel oxide is higher, and polymorphic variation
It is more notable.
3rd, memory of the invention realizes the extension of storage state, significantly improves aerospace and resist under the action of loading unit
Radiate the storage density of memory.
Description of the drawings
Fig. 1 (a) is aerospace Rad Hard Memory internal structure module；
Fig. 1 (b) is the electromagnetic field regulation and control figure of aerospace Rad Hard Memory single physical storage point；
Fig. 2 is the multiple-state storage that different electric field strengths cause single physical storage point；
Fig. 3 is that the multiple-state storage for causing single physical storage point is scanned in magnetic field from negative to positive；
Fig. 4 is that the multiple-state storage for causing single physical storage point is scanned in magnetic field from positive to negative；
Fig. 5 (a) is a kind of form for the multiple-state storage mechanism figure that the positive and negative field sweep in magnetic field causes single physical storage point；
Fig. 5 (b) is another form for the multiple-state storage mechanism figure that the positive and negative field sweep in magnetic field causes single physical storage point；
Fig. 5 (c) is another form for the multiple-state storage mechanism figure that the positive and negative field sweep in magnetic field causes single physical storage point.
Specific embodiment
The present invention will now be described in detail with reference to the accompanying drawings and examples.
The present invention provides a kind of method for improving aerospace Rad Hard Memory storage density, memory front end uses standard
Storage unit is connected by the CMOS technology of logic, rear end with the drain electrode of memory CMOS.Storage unit is three-decker, is respectively
Platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer, the nickel oxide in nickel oxide accumulation layer are in polycrystalline state.The new radioresistance of aerospace
In memory preparation process, preparation process influences the electromagnetism regulation and control storage performance of storage unit very big.Nickel oxide dielectric layer
In preparation process, the parameters such as oxygen pressure, pulsed laser deposition cavity inner temperature, nickel oxide storage layer thickness are to memory in cavity
Electromagnetism performance of control quality has a significant impact.Therefore, technological parameter will meet in the preparation：Oxygen pressure in pulsed laser deposition cavity
Scope is 1.0~1.5Torr；Pulsed laser deposition cavity inner temperature scope is 450~500 DEG C；Nickel oxide stores layer thickness
250~300nm.
It is a kind of improve aerospace Rad Hard Memory storage density memory, including storage unit, CMOS, loading unit and
Peripheral control circuits, storage unit are connected with the drain electrode of memory CMOS, and CMOS is connected with peripheral control circuits, and loading unit is
Storage unit provides electric field and/or magnetic field, and direction of an electric field is perpendicular to platinum electrode layer, and magnetic direction is parallel to platinum electrode layer.One
It is corresponding with a definite storage state in fixed electric field section or magnetic field section.Different sizes, the storage unit of parameter,
Correspondence between them is different, during concrete application, can first test draw electric field section or magnetic field section with
The correspondence of state is stored, is then directly used for multiple-state storage.
Specific example is named to illustrate.Top electrode and bottom electrode layer are using platinum metal layer, using magnetron sputtering
Prepared by mode, about 100nm is thick；Interlayer is nickel oxide binary metal oxide accumulation layer, by way of pulsed laser deposition
It prepares, about 300nm is thick；Contact of the metal platinum with nickel oxide is Ohmic contact, there is no Schottky barrier, so entirely storing
Journey is happened inside nickel oxide dielectric layer, is bulk effect rather than interfacial effect.
Complete Memory Storage Unit preparation after, storage unit is connected with the drain electrode of memory CMOS, complete and
The combination of CMOS, designs peripheral control circuits, mainly include row/column decoder, write driving, sense amplifier, data are led to
Road etc., and be connected with CMOS.The regulation and control in electric field and magnetic field are carried out in storage array area, are loaded along perpendicular to the direction of platinum electrode layer
Electric field, while magnetic field is loaded along the direction parallel to platinum electrode layer, carry out current-limiting protection when loading electric field, so that it may realize single object
The multivalue stable state storage of reason storage point.
It is aerospace Rad Hard Memory internal structure module as shown in Fig. 1 (a), is selected including physical store point, row/column
Device, information input/output control etc..To ensure the accurate write-in of physical store point and reading, selected simultaneously using ranks selector
The mode of address is taken, the crosspoint of gating line wordline of being expert at and row gating line bit line determines physical store point, stores a little
Information is transmitted via data channel into row information.The input of write signal is write by write driver to the storage physical points application chosen
Enter signal, shown in minimum regulation and control unit such as Fig. 1 (b) of write signal regulation and control, the drain electrode of nickel oxide accumulation layer and CMOS are integrated in one
It rising, applies specific electric field and magnetic field to the storage point chosen, electromagnetic field synergistic effect changes the storage state of particular memory point,
The reading of read signal is completed by sense amplifier, defines saltus step process of the physical store point from high-impedance state to low resistance state " to put
Position ", the saltus step process from low resistance state to high-impedance state are Reset.
Fig. 2 is the multiple-state storage that different electric field strengths cause single physical storage point.For traditional aerospace memory, generally
One physical store point can only store " 0 " and " 1 ", for the aerospace Rad Hard Memory of the present invention, in the effect of extra electric field
Under, the vertical platinum electrode layer of direction of an electric field can store point 8 states of storage in single physical, and Fig. 2 shows 8 states.In fig. 2,
Electric field increases to 2.0 × 10 from 06During V/m, memory is constantly in low resistance state, is denoted as state " 111 "；Electric field be more than 2.0 ×
106After V/m, reseting procedure occurs for memory, into first high-impedance state HRS1, it is denoted as state " 000 "；Continue to increase electric field, in electricity
Field is more than 3.1 × 106After V/m, memory continues that reseting procedure occurs, into higher high-impedance state HRS2, it is denoted as state " 001 "；Class
4.2 × 10 are subsequently happened at successively like process6V/m、5.1×106V/m、5.9×106V/m、6.7×106V/m、7.8×106V/
M, state are denoted as " 010 ", " 011 ", " 100 ", " 101 " " 110 " respectively.When electric field reaches 8.5 × 106During V/m, memory is put
Position process, has returned to low resistance state, has still been denoted as state " 111 ", removes electric field at this time, return to initial state, can weigh again
Multiple above-mentioned storing process.By the effect of electric field, the storage of physical store 1 bit of point is realized to 3 bits
The transformation of storage stores state and expands to 8 states from 2 states, the specific information that stores is shown in Table 2.As shown in table 2, according to electric field with
The correspondence of state is stored, realizes the variation of a upper eight storages state of storage point.
2 single physical of table storage point polymorphism information storage table
Fig. 3 illustrates the regulation and control to aerospace Rad Hard Memory from negative sense to positive magnetic field.Exemplary in figure is resistance
It is worth the high-impedance state HRS for 309.4 ohm1(being shown in Table 2), corresponding storage state is " 000 ".Under the action of externally-applied magnetic field, magnetic field
Apparent variation has occurred in the parallel platinum electrode layer in direction, the resistance value of memory single physical storage point, and Fig. 3, which is illustrated, typically to be deposited
Store up the transition process of state.Wherein, magnetic field from -4500Oe to+4500Oe direction field sweep, magnetic field range be 1200Oe~2400Oe
Between when, resistance becomes larger, and occurs step-like, and here, we define the relatively low state of resistance value as one state, the higher state of resistance value
For " 0 " state, therefore corresponding " 0 " state on step, one state is corresponded under step, it can be into the tune of line storage state by changing magnetic field
Control realizes that storage state expands to 2 states from 1 state, for high-impedance state HRS1, the storage realized from a state " 000 " becomes two
A state " 0000 " and the storage of " 1000 ".
Fig. 4 illustrates regulation and control of the magnetic field to aerospace Rad Hard Memory from forward direction to negative sense.Unlike Fig. 3, magnetic
Field direction field sweep from 4500Oe to -4500Oe, when magnetic field range is between -1200Oe~-2400Oe, resistance becomes larger, and occurs
It is step-like, " 0 " state is corresponded on step, one state is corresponded under step.It, equally can be into line storage by the effect of opposing magnetic field
The regulation and control of state.
Fig. 5 (a), Fig. 5 (b), Fig. 5 (c) give the multiple-state storage machine that the positive and negative field sweep in magnetic field causes single physical storage point
Reason.By taking the magnetic field application process of Fig. 3 as an example, initial state magnetic field is -4500Oe, the magnetic of the magnetic conductive segment in storage medium
Square direction is identical, and all referring to magnetic direction, the resistance value ratio of this tense is relatively low, shows as one state, as shown in Fig. 5 (a)；With
Negative sense magnetic field becomes smaller, until positive magnetic field, the magnetic moment direction of the small magnetic conductive segment (epimere) of coercivity changes 180 °, refers to
To positive magnetic direction, and the magnetic moment direction of the big magnetic conductive segment (hypomere) of coercivity still keeps original direction, at this point,
The magnetic moment direction of two magnetic conductive segments is different, and the resistance value of corresponding state is big, " 0 " state is shown as, as shown in Fig. 5 (b)；With just
Continuing to increase to magnetic field, the magnetic moment direction of magnetic conductive segment all points to positive magnetic direction, and the resistance value ratio of this tense is relatively low,
One state is shown as, as shown in Fig. 5 (c).
According to the discussion of Fig. 2, Fig. 3 and Fig. 4, only by the effect of electric field, a physics of memory can be realized
Storage o'clock is stored from 1 bit to 3 bit storage transformations, and storage state expands to 8 states from 2 states, and storage density becomes
Greatly；The effect in magnetic field is added in, by magnetic field and the synergistic effect of electric field, a physical store o'clock can be realized from 1 bit
The transformation to 4 bit storages is stored, storage state expands to 16 states from 2 states, significantly improves aerospace Rad Hard Memory
Storage density, be with a wide range of applications.
In conclusion the foregoing is merely a prefered embodiment of the invention, it is not intended to limit the scope of the present invention.
Within the spirit and principles of the invention, any modifications, equivalent replacements and improvements are made should be included in the present invention's
Within protection domain.
Claims (6)
- A kind of 1. method for improving aerospace Rad Hard Memory storage density, which is characterized in that by storage unit and memory The drain electrode connection of CMOS, storage unit is three-decker, is respectively platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer；It is described Nickel oxide in nickel oxide accumulation layer is in polycrystalline state；Electric field and/or magnetic field are loaded to change the storage state of storage unit, direction of an electric field is put down perpendicular to platinum electrode layer, magnetic direction Row is in platinum electrode layer.
- 2. the method for aerospace Rad Hard Memory storage density is improved as described in claim 1, which is characterized in that according to electric field Correspondence with storing state realizes the variation of a upper eight storages state of storage point；According to magnetic field and the corresponding pass of storage state System realizes the variation of a upper two storages state of storage point；According to electric field and magnetic field and the correspondence of storage state, one is realized The variation of the upper 16 storages state of storage point.
- 3. the method for aerospace Rad Hard Memory storage density is improved as described in claim 1, which is characterized in that nickel oxide is deposited Technological parameter meets when prepared by reservoir：Oxygen pressure scope is 1.0~1.5Torr in pulsed laser deposition cavity；Pulsed laser deposition Cavity inner temperature scope is 450~500 DEG C；Nickel oxide storage layer thickness is 250~300nm.
- 4. the method for aerospace Rad Hard Memory storage density is improved as described in claim 1, which is characterized in that loading electric field Shi Jinhang current-limiting protections.
- 5. it is a kind of improve storage density aerospace Rad Hard Memory, which is characterized in that the memory include storage unit, CMOS, loading unit and peripheral control circuits, the drain electrode connection of the storage unit and CMOS, CMOS connect with peripheral control circuits Connect, loading unit provides electric field and/or magnetic field for storage unit, direction of an electric field perpendicular to platinum electrode layer, magnetic direction parallel to Platinum electrode layer；The storage unit is three-decker, is respectively platinum electrode layer, nickel oxide accumulation layer and platinum electrode layer；The nickel oxide is deposited Nickel oxide in reservoir is in polycrystalline state.
- 6. the aerospace Rad Hard Memory of storage density is improved as claimed in claim 5, which is characterized in that the nickel oxide is deposited Technological parameter meets when prepared by reservoir：Oxygen pressure scope is 1.0~1.5Torr in pulsed laser deposition cavity；Pulsed laser deposition Cavity inner temperature scope is 450~500 DEG C；Nickel oxide storage layer thickness is 250~300nm.
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| CN101123120A (en) * | 2007-09-06 | 2008-02-13 | 复旦大学 | Once programming memory and its operation method using resistor memory media |
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
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