CN108069731A - A kind of casting polysilicon exempts to spray crucible silicon nitride coating and preparation method thereof - Google Patents
A kind of casting polysilicon exempts to spray crucible silicon nitride coating and preparation method thereof Download PDFInfo
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- CN108069731A CN108069731A CN201711354115.0A CN201711354115A CN108069731A CN 108069731 A CN108069731 A CN 108069731A CN 201711354115 A CN201711354115 A CN 201711354115A CN 108069731 A CN108069731 A CN 108069731A
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
The present invention discloses a kind of casting polysilicon and exempts to spray crucible silicon nitride coating and preparation method thereof, which includes the silicon nitride and binding agent of two kinds of grain sizes.It is mixed using the silicon nitride of two kinds of grain sizes, grain thickness collocation, fine grained can be filled into the hole between coarse granule, enhance the consistency and intensity of silicon nitride coating.In addition, present invention employs high viscosity, the binding agents of low oxygen content so that silicon nitride coating has low oxygen content and high intensity.In short, the present invention enhances the intensity and compactness of coating, reduces the oxygen containing defect and impurity of silicon ingot, help to improve the yield rate of silicon ingot, improve the stability and photoelectric conversion efficiency of photovoltaic module by the optimum choice in the collocation of silicon nitride grain size and binding agent.
Description
Technical field
The present invention relates to the polysilicon casting preparation fields of crucible silicon nitride coating, and in particular to a kind of efficient polycrystalline
Silicon casting is with exempting from spray crucible silicon nitride coating and preparation method thereof.
Background technology
Silicon nitride coating is to cast one layer very important coating of the polysilicon with the inner wall surface for exempting to spray crucible.This layer of nitrogen
SiClx coating has the two main effects of aspect：First, silicon nitride is as a kind of high temperature ceramic material, in silicon ingot fusing
It can keep stable at a high temperature of 1500 DEG C, and not react with silicon liquid.Therefore, silicon nitride coating has isolated silicon liquid and stone
English crucible contacts directly, and avoids it and reacts at high temperature, it is therefore prevented that and silicon ingot caused by silicon liquid glues pot in cooling splits ingot,
The quality security problems such as crucible ruptures or even silicon liquid flows out.Thus, silicon nitride can help silicon ingot smooth as releasing agent
Complete the demoulding.Second, often containing more impurity inside silica crucible, these impurity include various metal impurities and quartz
The oxygen element itself contained, these impurity elements are easy to be diffused into silicon liquid at high temperature, increase in inside ingot impure point
The defects of, reduce the efficiency of photovoltaic module made of polysilicon.Therefore, high-purity silicon nitride coating block these impurity and
Silicon liquid contacts directly, and blocks the path of these impurity elements diffusion, may finally improve the purity of silicon ingot, reduce inside it
Defect improves the efficiency of its photovoltaic module.
Although silicon nitride coating plays such important role, but still there are problems that.First, due in spraying nitrogen
, it is necessary to add Ludox as binding agent, Ludox inside main component is silica, these silica during SiClx coating
It is directly in contact with silicon liquid, by the oxygen content increased in silicon ingot of high degree, causes a series of oxygen-containing defected generations, this is similary
The luminous point transfer efficiency of the photovoltaic module of this casting polysilicon manufacture will be reduced.Second, after silicon nitride spray finishing, often not enough cause
Close, insufficient strength, this causes alpha-silicon nitride powders are easily fallen to generate impure point inside silicon liquid, equally adds lacking for silicon ingot
It falls into, reduces the efficiency of photovoltaic module.
To solve the above-mentioned problems, the researcher in the industry proposes many schemes.
The Chinese patent of application number 201220097627.X discloses one kind before spraying silicon nitride, increases in crucible surface
Add the coating of one layer of boron nitride, so add the stop to impurity, but the introducing of boron nitride coating inevitably will be in silicon
Substantial amounts of boron element is introduced inside ingot.Boron element plays in the photoelectric device of silicon as the 3rd major element and provides hole
Effect, therefore, the introducing of boron element will greatly change the electrical properties of silicon ingot, this is very to the photovoltaic module finally prepared
Unfavorable.
The Chinese patent of Application No. 201410271294.1 discloses one kind and sprays one layer again on silicon nitride coating surface
The induced nucleations object such as silica slurry, this layer of silicon dioxide powder etc. will can reduce long brilliant initial stage silicon to crystalline silicon induced nucleation
The defects of dislocation of crystal, crystal boundary, improves long brilliant quality.But this layer is sprayed on the silica on silicon nitride layer surface, in height
Temperature is lower directly to be contacted with silicon liquid, and will react generation silicon monoxide, this not only so that the effect of original induced nucleation is not achieved,
And the oxygen content that will be significantly greatly increased in silicon ingot, increase the defects of oxygen is related, reduce the efficiency of photovoltaic module.
The researchers such as Hironori ITOH (ITOH H, Okamura H, Asanoma S, et al. Preparation
and evaluation of porous Si3N4 ceramic substrates that repel Si melt[J].
Journal-Ceramic Society Japan,2013,121(1413):It 401-405) employs and is mixed in silicon nitride coating
Then micron-sized PMMA carries out high-temperature baking to coating again, in baking process, micron-sized hole under PMMA volatilizations etc.,
These holes will increase angle of wetting of the silicon liquid to silicon nitride coating, reduce infiltration of the silicon liquid to silicon nitride coating.But this some holes
The defects of gap is by being directly becoming the express passway that impurity is spread toward silicon liquid inside silica crucible, increasing inside silicon ingot reduces photovoltaic
The efficiency of component.
The content of the invention
Exempt to spray crucible silicon nitride coating and its preparation method and application the present invention provides a kind of polycrystalline silicon ingot casting.
Technical scheme is specially：
A kind of casting polysilicon exempts to spray crucible silicon nitride coating, which includes the silicon nitride of two kinds of grain sizes and viscous
Tie agent.
As a kind of optimal technical scheme, the silicon nitride of described two grain sizes includes silicon nitride A and silicon nitride B, the nitrogen
For the grain size of SiClx A for 5~50 μm and not including 5 μm, the grain size of the silicon nitride B is 0.1~5 μm；Further preferably, institute
The grain size of silicon nitride A is stated as 10~20 μm, the grain size of the silicon nitride B is 0.5~2 μm.
The silicon nitride A and silicon nitride B mass ratioes are 1:0.01~1；Preferably 1:0.2-0.5.
The silicon nitride of described two grain sizes and the mass ratio of binding agent are：1:0.01~1；Preferably 1:0.03- 0.08.
The binding agent is the binding agent of high viscosity low oxygen content；Preferably polyacrylic acid (PAA), butadiene-styrene latex
(SBR), it is one or more of in guar gum (GG) and gum arabic (GA).
Above-mentioned casting polysilicon exempts to spray the preparation method of crucible silicon nitride coating, first mixes the silicon nitride of two kinds of grain sizes equal
It is even, then uniformly mixed alpha-silicon nitride powders are disperseed in deionized water, to add in binding agent and stir evenly and sprayed.It can adopt
The silicon nitride of two kinds of grain sizes is uniformly mixed with V-type batch mixer.
Application of the above-mentioned silicon nitride coating in casting polysilicon exempts to spray crucible.
A kind of casting polysilicon exempts to spray crucible, and one layer of silicon nitride coating described above is sprayed in quartz crucible surface.Specifically
's
Above-mentioned silicon nitride coating is sprayed with the compressed air of purification, spray gun pressure is 25psi~45psi, is sprayed
Distance is applied as 20~35cm, positioning land crucible width is 15~25cm, and it is 80~150 μm to control coating layer thickness.
Casting polysilicon of the present invention exempts to spray the most preferred technique scheme of crucible silicon nitride coating preparation method, specific to wrap
Include following steps：
(1) using the silicon nitride A and silicon nitride B of two kinds of grain sizes, the wherein grain size of silicon nitride A is 10~20 μm, the nitrogen
The grain size of SiClx B is 0.5~2 μm.The silicon nitride A and silicon nitride B mass ratioes are 1:0.01~1.
(2) above-mentioned uniformly mixed alpha-silicon nitride powders are disperseed in deionized water, to add in polyacrylic acid (PAA), butylbenzene
It is one or more of in latex (SBR), guar gum (GG) and gum arabic (GA).The quality of above-mentioned silicon nitride powder and binding agent
Than for：1:0.01~1.
(3) it is above-mentioned slurry agitation is uniform, then with purification compressed air sprayed, spray gun pressure for 25psi~
45psi, spray distance are 20~35cm, and positioning land crucible width is 15~25cm, and it is 80~150 μm to control coating layer thickness.
The present invention is mixed by using the silicon nitride particle of two kinds of grain sizes, and thickness collocation, little particle can be filled into big
Gap between grain, adds the consistency and intensity of silicon nitride coating, reduces the risk that silicon nitride falls into silicon liquid, also increase
It stops impurity and the effect smoothly demoulded.In addition, using polyacrylic acid (PAA), butadiene-styrene latex (SBR), guar gum
(GG) or the high viscositys such as gum arabic (GA), the glue of low oxygen content are as binding agent, not only reduce what is spread to silicon ingot
The content of oxygen, and the intensity of silicon nitride coating is increased, it equally improves it and stops impurity and the effect smoothly demoulded.
Unless otherwise indicated, raw material according to the present invention can be bought with market and be obtained.
Compared with prior art, the invention has the advantages that：
Present invention utilizes the silicon nitride collocation of two kinds of grain sizes, short grained silicon nitride can be filled into the gap of bulky grain
Between, increase the compactness and intensity of coating.In addition, the glue for employing high viscosity and low oxygen content increases as binding agent
The intensity of coating reduces the oxygen content of coating entirety.
In short, by the design of above-mentioned coating, the intensity and consistency of coating are enhanced, reduces the oxygen element in silicon ingot
Cause impurity and defect, improve the yield rate of silicon ingot, finally improve the stability and photoelectric conversion efficiency of photovoltaic module.
Description of the drawings
Fig. 1 is the ingot casting red sector minority carrier life time instrument test result of the polysilicon cast using silica crucible in embodiment 1
Fig. 2 is the ingot casting red sector minority carrier life time instrument test result of the polysilicon cast using silica crucible in embodiment 2
Fig. 3 is the ingot casting red sector minority carrier life time instrument test result of the polysilicon cast using silica crucible in embodiment 3
Fig. 4 is the ingot casting red sector minority carrier life time instrument test result using the polysilicon of common silica crucible casting
Specific embodiment
Below by specific embodiment, the invention will be further described, but protection scope of the present invention be not limited to it is following
Embodiment.
Embodiment 1
Using the silicon nitride A and silicon nitride B of two kinds of grain sizes, wherein silicon nitride A grain sizes are 10~14 μm, silicon nitride B grain sizes
For 1~2 μm.Silicon nitride A and silicon nitride B mass ratioes are 1:0.5.It is mixed uniformly using V-type batch mixer.Above-mentioned mixing is equal
Even alpha-silicon nitride powders disperse in deionized water, and in mass ratio 1：1 adds in polyacrylic acid (PAA), butadiene-styrene latex (SBR)
The mass ratio of binder mixtures, silicon nitride powder and binding agent is 1:0.03.Above-mentioned slurry agitation is uniform, then with purification
Compressed air is sprayed, and spray gun pressure is 25psi~30psi, and spray distance is 20~25cm, and positioning land crucible width is
15~20cm controls coating layer thickness as 120~150 μm, obtains consistency as 4.69g/cm3, and the silicon nitride coating that intensity is big.
Coating manufactured in the present embodiment is subjected to adhesive force test, as a result 852kPa, far above common coating, i.e. silica crucible table
The adhesive force that silicon nitride is directly sprayed in face is 310kPa.This crucible is applied to casting polysilicon, is tested and cast using minority carrier life time instrument
Ingot red sector, the results are shown in Figure 1.Ingot casting red sector is narrower, and the average minority carrier lifetime of corresponding silicon chip is longer, and battery component is averaged
Transfer efficiency is also longer.Compared with the red sector under common coating techniques (as shown in Figure 4), this red sector scope is narrower, it is meant that
The average minority carrier lifetime of silicon chip is longer, also can be obtained by the battery component of corresponding higher conversion efficiency.
Embodiment 2
Using the silicon nitride A and silicon nitride B of two kinds of grain sizes, wherein silicon nitride A grain sizes are 13~17 μm, silicon nitride B grain sizes
For 0.5~2 μm.Silicon nitride A and silicon nitride B mass ratioes are 1:0.2.It is mixed uniformly using V-type batch mixer.By above-mentioned mixing
Uniform alpha-silicon nitride powders disperse in deionized water, to add in guar gum (GG) and be used as binding agent, silicon nitride powder and binding agent
Mass ratio be 1:0.08.Above-mentioned slurry agitation is uniform, it is then sprayed with the compressed air of purification, spray gun pressure is
30psi~35psi, spray distance are 25~30cm, and positioning land crucible width is 20~22cm, and it is 100 to control coating layer thickness
~120 μm, consistency is obtained as 4.88g/cm3, and the silicon nitride coating that intensity is big.Coating manufactured in the present embodiment is carried out attached
Put forth effort to test, as a result 883kPa, far above common coating, i.e., the adhesive force that quartz crucible surface directly sprays silicon nitride is
310kPa.This crucible is applied to casting polysilicon, tests ingot casting red sector using minority carrier life time instrument, the results are shown in Figure 2.Casting
Ingot red sector is narrower, and the average minority carrier lifetime of corresponding silicon chip is longer, and the average transfer efficiency of battery component is also longer.It is applied with common
Red sector under layer process compares (as shown in Figure 4), this red sector scope is narrower, it is meant that and the average minority carrier lifetime of silicon chip is longer,
It can be obtained by the battery component of corresponding higher conversion efficiency.
Embodiment 3
Using the silicon nitride A and silicon nitride B of two kinds of grain sizes, wherein silicon nitride A grain sizes are 16~20 μm, silicon nitride B grain sizes
For 1~2 μm.Silicon nitride A and silicon nitride B mass ratioes are 1:0.4.It is mixed uniformly using V-type batch mixer.Above-mentioned mixing is equal
Even alpha-silicon nitride powders disperse in deionized water, to add in guar gum (GG) as binding agent, silicon nitride powder and binding agent
Mass ratio is 1:0.05.Above-mentioned slurry agitation is uniform, it is then sprayed with the compressed air of purification, spray gun pressure is
35psi~45psi, spray distance are 30~35cm, and positioning land crucible width is 23~25cm, control coating layer thickness be 80~
100 μm, consistency is obtained as 4.94g/cm3, and the silicon nitride coating that intensity is big.Coating manufactured in the present embodiment is adhered to
Power is tested, as a result 888kPa, far above common coating, i.e., the adhesive force that quartz crucible surface directly sprays silicon nitride is
310kPa.This crucible is applied to casting polysilicon, tests ingot casting red sector using minority carrier life time instrument, the results are shown in Figure 3.Casting
Ingot red sector is narrower, and the average minority carrier lifetime of corresponding silicon chip is longer, and the average transfer efficiency of battery component is also longer.It is applied with common
Red sector under layer process compares (as shown in Figure 4), this red sector scope is narrower, it is meant that and the average minority carrier lifetime of silicon chip is longer,
It can be obtained by the battery component of corresponding higher conversion efficiency.
Embodiment 4
Using the silicon nitride A and silicon nitride B of two kinds of grain sizes, wherein silicon nitride A grain sizes are 25~35 μm, silicon nitride B grain sizes
For 3~4 μm.Silicon nitride A and silicon nitride B mass ratioes are 1:1.It is mixed uniformly using V-type batch mixer.It is uniformly mixed above-mentioned
Alpha-silicon nitride powders disperse in deionized water, to add in gum arabic (GA) as binding agent, silicon nitride powder and binding agent
Mass ratio is 1:0.8.Above-mentioned slurry agitation is uniform, it is then sprayed with the compressed air of purification, spray gun pressure 35psi
~45psi, spray distance are 30~35cm, and positioning land crucible width is 23~25cm, and it is 80~100 μ to control coating layer thickness
M obtains consistency as 4.79g/cm3, and the silicon nitride coating that intensity is big.Coating manufactured in the present embodiment is subjected to adhesive force survey
Examination, as a result 845kPa, far above common coating, i.e., the adhesive force that quartz crucible surface directly sprays silicon nitride is 310kPa.
This crucible is applied to casting polysilicon, ingot casting red sector is tested using minority carrier life time instrument, with the red sector phase under common coating techniques
Than this red sector scope is narrower, it is meant that the average minority carrier lifetime of silicon chip is longer, also can be obtained by corresponding higher conversion efficiency
Battery component.
Comparative example 1
Using the silicon nitride powder that grain size is 16~20 μm, the alpha-silicon nitride powders are disperseed in deionized water, to add in
Guar gum (GG) is used as binding agent, and the mass ratio of silicon nitride powder and binding agent is 1:0.05.Above-mentioned slurry agitation is uniform, so
It is sprayed afterwards with the compressed air of purification, spray gun pressure is 35psi~45psi, and spray distance is 30~35cm, is positioned
Fall crucible width for 23~25cm, coating layer thickness is controlled to obtain silicon nitride coating for 80~100 μm.Testing result shows its cause
Density is 3.35g/cm3, substantially less than Examples 1 to 4, coating prepared by this comparative example carry out adhesive force test, knot
Fruit is 420kPa, with common coating (quartz crucible surface directly sprays silicon nitride, adhesive force 310kPa) although comparing has increasing
Add, but the still significantly lower than coating adhesion test result of Examples 1 to 4.
Comparative example 2
Using for 16~20 μm, silicon nitride B grain sizes are 1~2 μm.Silicon nitride A and silicon nitride B mass ratioes are 1:0.4.Using
V-type batch mixer is mixed uniformly.Above-mentioned uniformly mixed alpha-silicon nitride powders are disperseed in deionized water, to add in polyvinyl chloride
As binding agent, the mass ratio of silicon nitride powder and binding agent is 1:0.05.Above-mentioned slurry agitation is uniform, then with purification
Compressed air is sprayed, and spray gun pressure is 35psi~45psi, and spray distance is 30~35cm, positions land crucible width
For 23~25cm, coating layer thickness is controlled to obtain silicon nitride coating for 80~100 μm.Testing result shows that its consistency is
3.42g/cm3, substantially less than Examples 1 to 4, coating prepared by this comparative example carry out adhesive force test, as a result
438kPa, with common coating (quartz crucible surface directly sprays silicon nitride, adhesive force 310kPa) although comparing has increase,
The still significantly lower than coating adhesion test result of Examples 1 to 4.
Claims (9)
1. a kind of casting polysilicon exempts to spray crucible silicon nitride coating, which is characterized in that the silicon nitride coating includes two kinds of grain sizes
Silicon nitride and binding agent.
2. silicon nitride coating according to claim 1, which is characterized in that the silicon nitride of described two grain sizes includes silicon nitride
For the grain size of A and silicon nitride B, the silicon nitride A for 5~50 μm and not including 5 μm, the grain size of the silicon nitride B is 0.1~5 μm；
Preferably, the grain size of the silicon nitride A is 10~20 μm, and the grain size of the silicon nitride B is 0.5~2 μm.
3. silicon nitride coating according to claim 2, which is characterized in that the silicon nitride A and silicon nitride B mass ratioes are 1:
0.01~1；Preferably 1:0.2-0.5.
4. silicon nitride coating according to claim 1, which is characterized in that the silicon nitrides of described two grain sizes and binding agent
Mass ratio is：1:0.01~1；Preferably 1:0.03-0.08.
5. the silicon nitride coating according to claim 1 or 4, which is characterized in that the binding agent contains for high viscosity hypoxemia
The binding agent of amount；Preferably one or more of polyacrylic acid, butadiene-styrene latex, guar gum and gum arabic.
6. any casting polysilicon exempts to spray the preparation method of crucible silicon nitride coating in Claims 1 to 5, feature exists
In first the silicon nitride of two kinds of grain sizes is uniformly mixed, then uniformly mixed alpha-silicon nitride powders are disperseed in deionized water, to add in
Binding agent and stirring evenly is sprayed.
7. application of any silicon nitride coating in casting polysilicon exempts to spray crucible in Claims 1 to 5.
8. a kind of casting polysilicon exempts to spray crucible, which is characterized in that sprays one layer such as Claims 1 to 5 in quartz crucible surface
In any silicon nitride coating.
9. casting polysilicon according to claim 8 exempts to spray crucible, which is characterized in that by any institute in Claims 1 to 5
The silicon nitride coating stated is sprayed with the compressed air of purification, and spray gun pressure is 25psi~45psi, spray distance for 20~
35cm, positioning land crucible width is 15~25cm, and it is 80~150 μm to control coating layer thickness.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114892267A (en) * | 2022-05-24 | 2022-08-12 | 中环领先半导体材料有限公司 | Method for optimizing epitaxial minority carrier lifetime |
| CN116286145A (en) * | 2023-03-27 | 2023-06-23 | 烟台核晶陶瓷新材料有限公司 | Crucible inner surface release agent for ingot casting and preparation method thereof |
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| CN103920627A (en) * | 2014-04-29 | 2014-07-16 | 南通综艺新材料有限公司 | Method for manufacturing polycrystal blowing crucibles for cast ingots |
| CN106277823A (en) * | 2016-08-26 | 2017-01-04 | 河北高富氮化硅材料有限公司 | A kind of grain size distribution improves the method for silicon nitride coating compactness |
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- 2017-12-15 CN CN201711354115.0A patent/CN108069731A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103920627A (en) * | 2014-04-29 | 2014-07-16 | 南通综艺新材料有限公司 | Method for manufacturing polycrystal blowing crucibles for cast ingots |
| CN106277823A (en) * | 2016-08-26 | 2017-01-04 | 河北高富氮化硅材料有限公司 | A kind of grain size distribution improves the method for silicon nitride coating compactness |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114892267A (en) * | 2022-05-24 | 2022-08-12 | 中环领先半导体材料有限公司 | Method for optimizing epitaxial minority carrier lifetime |
| CN116286145A (en) * | 2023-03-27 | 2023-06-23 | 烟台核晶陶瓷新材料有限公司 | Crucible inner surface release agent for ingot casting and preparation method thereof |
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Application publication date: 20180525 |