CN108069388B - Method for forming inclined plane on surface of substrate - Google Patents
Method for forming inclined plane on surface of substrate Download PDFInfo
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- CN108069388B CN108069388B CN201611029732.9A CN201611029732A CN108069388B CN 108069388 B CN108069388 B CN 108069388B CN 201611029732 A CN201611029732 A CN 201611029732A CN 108069388 B CN108069388 B CN 108069388B
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- support column
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- plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a method for forming an inclined plane on the surface of a base body, which utilizes the size change of materials in the oxidation process to incline a plane relative to the surface of the base body, thereby forming the inclined plane with controllable inclination angle, and the flatness of the inclined plane is higher, thereby well solving the problems existing in the prior art.
Description
Technical field
This application involves technical field of manufacturing semiconductors more particularly to a kind of surface in matrix to form bevel structure
Side.
Background technique
In the manufacturing process of MEMS (MEMS) device, it is sometimes desirable to inclined-plane figure is formed, to make optics device
The products such as part, magnetic device, traditional method for example can be using the slope of etched features and manufacture inclined-plane.
It should be noted that the above description of the technical background be intended merely to it is convenient to the technical solution of the application carry out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes the application's
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Summary of the invention
The inventors of the present application found that the slope using etched features come manufacture inclined-plane method in, it is oblique to be difficult control
The flatness on slope and the angle on slope.
The application provides a kind of surface shape method in the slope in matrix, utilizes the change of material size in oxidation process
Change, makes surface run-off the straight of the plane relative to matrix, to form the controllable inclined-plane of tilt angle, and the flatness on inclined-plane
It is higher, well solve problem of the existing technology.
According to the one aspect of the embodiment of the present application, a kind of surface shape method in the slope in matrix is provided, it is described oblique
Face is tilted relative to the surface of described matrix, which is characterized in that this method comprises:
The first support column and the second support column are formed on the surface of described matrix, the composition material of first support column is not
It is same as the composition material of second support column；
Form the sacrificial layer for surrounding first support column and second support column on the surface of described matrix, described the
One support column exposes from the upper surface of the sacrificial layer, and the upper surface of first support column is equal to or higher than the sacrifice
The upper surface of layer；
Buffer layer and oblique surface layer area are sequentially formed in the upper surface of the sacrificial layer and the upper surface of first support column
Domain, first support column and second support column are located at the lower section of the inclined-plane layer region；
In the external release through-hole formed through the buffer layer of the inclined-plane layer region, and pass through the release through-hole
All sacrificial layers below the inclined-plane layer region are removed, by first support column and second support column support
The buffer layer below the inclined-plane layer region and the inclined-plane layer region；And
Oxidation processes are carried out to the second support column, to change the height of second support column, to make the inclined-plane layer
Surface run-off the straight of the region relative to described matrix, wherein the upper surface of the inclined-plane layer region forms the inclined-plane.
According to the another aspect of the embodiment of the present application:
The inclined-plane layer region is oxidized relative to the inclined angle in surface of described matrix and second support column
Degree is related.
According to the another aspect of the embodiment of the present application:
The height of first support column and second support column is identical or different.
According to the another aspect of the embodiment of the present application:
The composition material of first support column includes silicon nitride, and the composition material of second support column includes silicon.
According to the another aspect of the embodiment of the present application, the first support column and the second support column are formed on the surface of described matrix
Include:
The first support column material layer is formed on described matrix surface；
The first support column material layer is etched to form first support column；
The second support column material layer is formed on described matrix surface and first support column surface；And
The second support column material layer is etched to form second support column.
According to the another aspect of the embodiment of the present application:
The material of the sacrificial layer includes silica, also, removes the sacrificial layer using hydrogen fluoride.
According to the another aspect of the embodiment of the present application:
The material of the buffer layer includes silicon nitride.
According to the another aspect of the embodiment of the present application, the method also includes:
Before forming the release through-hole, protective layer is formed on the surface of the inclined-plane layer region；And
After carrying out oxidation processes to the second support column, the protective layer is removed, to expose the inclined-plane.
The beneficial effects of the present application are as follows: it is capable of forming the controllable inclined-plane of tilt angle, and the flatness on inclined-plane is higher.
Referring to following description and accompanying drawings, specific implementations of the present application are disclosed in detail, specify the original of the application
Reason can be in a manner of adopted.It should be understood that presently filed embodiment is not so limited in range.In appended power
In the range of the spirit and terms that benefit requires, presently filed embodiment includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in a other embodiment, is combined with the feature in other embodiment, or the feature in substitution other embodiment.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Detailed description of the invention
Included attached drawing is used to provide that a further understanding of the embodiments of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with verbal description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is laborious, it is also possible to obtain other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is in the embodiment of the present application in a schematic diagram of the surface shape method in the slope of matrix；
Fig. 2 is in the embodiment of the present application in a process flow diagram of the surface shape method in the slope of matrix.
Specific embodiment
Referring to attached drawing, by following specification, the aforementioned and other feature of the application be will be apparent.In specification
In attached drawing, specific implementations of the present application are specifically disclosed, which show wherein can be using the portion of the principle of the application
Divide embodiment, it will thus be appreciated that the application is not limited to described embodiment, on the contrary, the application includes falling into appended power
Whole modifications, modification and equivalent in the range of benefit requirement.
Embodiment 1
The embodiment of the present application 1 provides a kind of surface shape method in the slope in matrix, and the inclined-plane is relative to the matrix
Surface inclination.
Fig. 1 be in a schematic diagram of the surface shape method in the slope of matrix in the embodiment of the present application, as shown in Figure 1,
This method comprises:
Step 101 forms the first support column and the second support column, the group of first support column on the surface of described matrix
It is different from the composition material of second support column at material；
Step 102 forms the sacrifice for surrounding first support column and second support column on the surface of described matrix
Layer, first support column expose from the upper surface of the sacrificial layer, and the upper surface of first support column is equal to or height
In the upper surface of the sacrificial layer；
Step 103, the upper surface of the sacrificial layer and the upper surface of first support column sequentially form buffer layer and
Inclined-plane layer region, first support column and second support column are located at the lower section of the inclined-plane layer region；
Step 104, the external release through-hole formed through the buffer layer in the inclined-plane layer region, and by described
Release through-hole removes all sacrificial layers below the inclined-plane layer region, by first support column and second described
Dagger supports the buffer layer below the inclined-plane layer region and the inclined-plane layer region；
Step 105 carries out oxidation processes to the second support column, to change the height of second support column, to make institute
State surface run-off the straight of the inclined-plane layer region relative to described matrix, wherein the upper surface of the inclined-plane layer region forms described
Inclined-plane.
According to the present embodiment, the variation of the second support column size in oxidation process can be utilized, so that by the first support
Surface run-off the straight of the plane that column and the second support column are supported relative to matrix, so that being formed has pre-determined tilt angle
Inclined-plane, and the flatness on inclined-plane is higher.
In the present embodiment, which can be common matrix in field of semiconductor manufacture, such as Silicon Wafer, insulator
On silicon (Silicon-On-Insulator, SOI) wafer, germanium Silicon Wafer or gallium nitride (Gallium Nitride, GaN) it is brilliant
Circle etc.；Also, the wafer can be the wafer for not carrying out semiconductor technology processing, be also possible to carry out processing
Wafer, such as the wafer that the process such as ion implanting, etching and/or diffusion are crossed was carried out, the present embodiment is not intended to limit this.
In the present embodiment, the composition material of the composition material of the first support column and the second support column can be different, for example,
The composition material of first support column may include silicon nitride；The composition material of second support column may include silicon, such as polysilicon,
Monocrystalline silicon or non-type silicon etc..
In the present embodiment, the height of the first support column and the second support column can be identical or different.
In the present embodiment, above-mentioned steps 101 can be implemented by the following steps, to form the on the surface of matrix
One support column and the second support column:
Step 1011 forms the first support column material layer on described matrix surface；
Step 1012, etching the first support column material layer are to form first support column；
Step 1013 forms the second support column material layer on described matrix surface and first support column surface；And
Step 1014, etching the second support column material layer are to form second support column.
Certainly, above-mentioned steps 1011-1014 is only citing, and the present embodiment is without being limited thereto, can also be using other modes
To form first support column and the second support column.
In the present embodiment, the material of sacrificial layer may include silica, and hydrogen fluoride removal can be used at step 104
Sacrificial layer.The present embodiment can be without being limited thereto, and sacrificial layer is also possible to other materials, and can choose at step 104 with
The corresponding mode nuclear material of the material of sacrificial layer removes the sacrificial layer.
In the present embodiment, the material of buffer layer may include silicon nitride, and silicon nitride has biggish elasticity, is adapted to
Largely strain.In addition it is also possible to form buffer layer using other materials.
In the present embodiment, the material of inclined-plane layer region may include silicon.In addition it is also possible to carry out shape using other materials
At the inclined-plane layer region.
In the step 105 of the present embodiment, the height of the first support column does not change, and by being carried out to the second support column
Oxidation processes, so that the Level Change of the second support column, therefore, the side for the inclined-plane layer region that the second support column is supported are lifted
Height makes the inclined-plane layer region relative to the surface run-off the straight of described matrix, and the upper surface of inclined-plane layer region forms institute as a result,
State inclined-plane.
As shown in Figure 1, in the present embodiment, this method can also include:
Step 106, before forming the release through-hole, in the surface of inclined-plane layer region formation protective layer；And
Step 107, to the second support column carry out oxidation processes after, the protective layer is removed, to expose the inclined-plane.
Wherein, step 106 may be at before step 104, be used to form protective layer, in the removal sacrifice of step 104
Inclined-plane layer region is protected during layer；Step 107 can be located at after step 105, to remove the guarantor of covering inclined-plane layer region
Sheath, to expose the inclined-plane of inclined-plane layer region.
Through this embodiment, the variation of the second support column size in oxidation process can be utilized, so that by the first support
Surface run-off the straight of the plane that column and the second support column are supported relative to matrix, so that being formed has pre-determined tilt angle
Inclined-plane, and the flatness on inclined-plane is higher.
In the following, illustrating the shape of the present embodiment method in the slope in conjunction with specific example.
In the specific example, the composition material of the first support column for example can be silicon nitride, the composition of the second support column
Material for example can be silicon, and the material of sacrificial layer can be silica, and the material of buffer layer for example can be silicon nitride, inclined-plane layer
The material in region for example can be silicon.
Fig. 2 is the shape process flow diagram in the slope of the embodiment of the present application, as shown in Fig. 2, the process includes:
1) one layer of silicon nitride (SiN) material 201a is deposited on matrix 200, which for example can be matrix silicon wafer.
2) pass through photoetching, etching, degumming process, the first support column 201 of generation.
3) one layer of silicon materials 202a is deposited on matrix 200, it as needed can be with deposit polycrystalline silicon, monocrystalline silicon or non-type
Silicon.
4) pass through photoetching, etching, degumming process, the second support column 202 of generation.
5) one layer of sacrificial layer 203 is deposited, which for example can be silica, can usually cover BPSG,
The materials such as PSG, SOG form the silica.
6) silica for removing surface irregularity is ground by modes such as chemically mechanical polishings (CMP), to expose first
Support column 201 and the second support column 202.
7) silicon nitride layer of buffer layer 204 is deposited as on the surface of the first support column, the second support column and sacrificial layer, so
The silicon material layer as inclined-plane material layer 205a of redeposited one layer of predetermined thickness, the silicon material layer for example can be polycrystalline afterwards
Silicon, monocrystalline silicon or non-type silicon.
8) pass through photoetching, etching, degumming process, the formation inclined-plane layer region 205 in inclined-plane material layer 205a.
9) one layer of silicon nitride layer as protective layer 206 is deposited, which can cover inclined-plane layer region 205
Upper surface and side.
10) region except inclined-plane layer region 205, by photoetching, etching and degumming process, the position of definition release through-hole
It sets, and etches buffer layer 204 to form the release through-hole 207, via etch rests on matrix silicon wafer 200.
11) hydrogen fluoride HF gas is utilized, sacrificial layer 203 is etched away.
12) it is aoxidized by diffusion furnace tube, so that the second support column 202 is oxidized into 212, generates the change of size
Change, to make surface run-off the straight of the bevel layer region 205 relative to matrix silicon wafer 200.
13) dry etching is utilized, the silicon nitride protective layer 206 on 205 surface of surface ramp layer region is removed, exposes inclined-plane layer
The surface in region 206, the surface become inclined-plane 208.
Such as the 13 of Fig. 2) shown in, it is assumed that the height of the first support column 201 is a, and the height of the second support column script is also a,
The second support column 202 after oxidation processes is completely converted into silica, and height becomes 2.27a, the first support column and second
The distance of dagger is b, as a result, inclined angle, θ=actg (1.27a/b) of the inclined-plane 208 relative to matrix silicon wafer 200, so,
Tilt angle of the inclined-plane relative to the surface of matrix can accurately be controlled.
In addition, the surface of inclined-plane 208 relative to matrix can be controlled by setting a, b and the time of oxidation processes
Tilt angle.
In the present embodiment, the flatness on inclined-plane 208 and the technique of depositing silicon are related, therefore available higher
Flatness.
Combine specific embodiment that the application is described above, it will be appreciated by those skilled in the art that this
A little descriptions are all exemplary, and are not the limitation to the application protection scope.Those skilled in the art can be according to the application
Spirit and principle various variants and modifications are made to the application, these variants and modifications are also within the scope of application.
Claims (8)
1. a kind of surface shape method in the slope in matrix, the inclined-plane is tilted relative to the surface of described matrix, feature
It is, this method comprises:
The first support column is formed on the surface of described matrix and the second support column, the composition material of first support column are different from
The composition material of second support column；
Described matrix surface formed surround first support column and second support column sacrificial layer, described first
Dagger exposes from the upper surface of the sacrificial layer, wherein the upper surface of first support column is higher than the upper table of the sacrificial layer
The height of face or first support column is equal with the height of the sacrificial layer；
Buffer layer and inclined-plane layer region, institute are sequentially formed in the upper surface of the sacrificial layer and the upper surface of first support column
It states the first support column and second support column is located at the lower section of the inclined-plane layer region；
In the external release through-hole formed through the buffer layer of the inclined-plane layer region, and removed by the release through-hole
All sacrificial layers below the inclined-plane layer region, as described in first support column and second support column support
The buffer layer below inclined-plane layer region and the inclined-plane layer region；And
Oxidation processes are carried out to the second support column, to change the height of second support column, to make the inclined-plane layer region
Surface run-off the straight relative to described matrix, wherein the upper surface of the inclined-plane layer region forms the inclined-plane.
2. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that
The degree that the inclined-plane layer region is oxidized relative to the inclined angle in surface of described matrix and second support column
It is related.
3. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that
The height of first support column and second support column is identical or different.
4. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that
The composition material of first support column includes silicon nitride, and the composition material of second support column includes silicon.
5. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that on the surface of described matrix
It forms the first support column and the second support column includes:
The first support column material layer is formed on described matrix surface；
The first support column material layer is etched to form first support column；
The second support column material layer is formed on described matrix surface and first support column surface；And
The second support column material layer is etched to form second support column.
6. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that
The material of the sacrificial layer includes silica, also, removes the sacrificial layer using hydrogen fluoride.
7. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that
The material of the buffer layer includes silicon nitride.
8. as described in claim 1 in the surface shape method in the slope of matrix, which is characterized in that the method also includes:
Before forming the release through-hole, protective layer is formed on the surface of the inclined-plane layer region；And
After carrying out oxidation processes to the second support column, the protective layer is removed, to expose the inclined-plane.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611029732.9A CN108069388B (en) | 2016-11-14 | 2016-11-14 | Method for forming inclined plane on surface of substrate |
| PCT/CN2017/078831 WO2018086300A1 (en) | 2016-11-14 | 2017-03-30 | Method for forming slanting face at surface of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611029732.9A CN108069388B (en) | 2016-11-14 | 2016-11-14 | Method for forming inclined plane on surface of substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108069388A CN108069388A (en) | 2018-05-25 |
| CN108069388B true CN108069388B (en) | 2019-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611029732.9A Active CN108069388B (en) | 2016-11-14 | 2016-11-14 | Method for forming inclined plane on surface of substrate |
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| WO (1) | WO2018086300A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111834246B (en) * | 2019-04-23 | 2023-12-08 | 上海新微技术研发中心有限公司 | Wafer bonding device |
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|---|---|---|---|---|
| JP2004245973A (en) * | 2003-02-12 | 2004-09-02 | Sony Corp | Optical mems (micro electronic mechanical system) element, manufacturing method therefor, and diffraction type mems element |
| JP2006122743A (en) * | 2004-10-26 | 2006-05-18 | Dainippon Screen Mfg Co Ltd | Micro-reactor apparatus |
| CN101117207A (en) * | 2006-06-28 | 2008-02-06 | 视频有限公司 | In situ application of anti-stiction materials to micro devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10031569A1 (en) * | 1999-07-01 | 2001-02-01 | Advantest Corp | Highly miniaturized relay in integrated circuit form, providing reliable operation and high isolation at high frequencies, includes see-saw mounted plate alternately closing contacts on substrate when rocked |
| US7471440B2 (en) * | 2003-10-27 | 2008-12-30 | Spatial Photonics, Inc. | Fabricating micro devices using sacrificial materials |
| DE102008012384A1 (en) * | 2008-03-04 | 2009-09-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Lid for microsystems and method of making a lid |
| CN103472579B (en) * | 2012-02-24 | 2016-06-22 | 无锡微奥科技有限公司 | A kind of manufacture method from tilting micro electromechanical system micromirror |
| CN103440985B (en) * | 2013-07-30 | 2016-08-10 | 清华大学 | A kind of linear adjustable MEMS capacitor of multi-electrode |
-
2016
- 2016-11-14 CN CN201611029732.9A patent/CN108069388B/en active Active
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2017
- 2017-03-30 WO PCT/CN2017/078831 patent/WO2018086300A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004245973A (en) * | 2003-02-12 | 2004-09-02 | Sony Corp | Optical mems (micro electronic mechanical system) element, manufacturing method therefor, and diffraction type mems element |
| JP2006122743A (en) * | 2004-10-26 | 2006-05-18 | Dainippon Screen Mfg Co Ltd | Micro-reactor apparatus |
| CN101117207A (en) * | 2006-06-28 | 2008-02-06 | 视频有限公司 | In situ application of anti-stiction materials to micro devices |
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| Publication number | Publication date |
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| CN108069388A (en) | 2018-05-25 |
| WO2018086300A1 (en) | 2018-05-17 |
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