CN108064112A - Module and the plasma processing apparatus comprising the module occur for plasma - Google Patents

Abstract

In order to provide a kind of plasma that can be tackled substrate enlargement and may insure plasma density uniformity module and plasma processing apparatus comprising the module occur for the present invention, include the high frequency electric source of supply high frequency electric power, the nonmagnetic material for generating the antenna of plasma to process space based on the RF power and being configured between the process space and the antenna, the interval of the antenna and the nonmagnetic material is different according to region, wherein, the region is set according to the even density for the plasma that can make to generate in the process space.So as to which the present invention can handle large substrate, make it possible the more uniform plasma of generation, have the effect that can manufacture substrate best in quality.

Description

Module and the plasma processing apparatus comprising the module occur for plasma

Technical field

Plasma processing apparatus the present invention relates to a kind of plasma generation module and comprising the module, particularly exists It is configured with and is generated in the process space of substrate at the plasma generation module of plasma and the plasma comprising the module Manage device.

Background technology

Plasma processing apparatus generally means that based on plasma to handle the device of substrate.At plasma Reason device is the processing of the various ways implementation to substrate such as to deposit, etch or be ion implanted.Particularly, recently for height can be obtained The research and development of the inductive couple plasma processing device of density plasma carry out very active.

Previous technology on inductive couple plasma processing device is in Korean Patent Publication No. 2016- No. 0068254 (" module and the plasma processing apparatus comprising the module occur for plasma ", on 06 15th, 2016) is public It opens.The plasma that invention disclosed above is included in the chamber interior generation inductively coupled plasma for being configured with substrate occurs Module.It includes mutiple antennas here, module occurs for plasma and is configured to dielectric window corresponding with each mutiple antennas, with The enlargement of substrate can be tackled.

Simply, module occurs for previous plasma because configuring the low-intensity in the dielectric window of antenna lower part, thus It has difficulties in enlargement.Exist in addition, module occurs for previous plasma due to generating middle section and side in substrate The density contrast of the plasma in edge region and caused by processing substrate uniformity decline the problem of.

Prior art literature

Patent document：(" plasma occurs module and includes the module Korean Patent Publication No. the 2016-0068254th Plasma processing apparatus ", on 06 15th, 2016)

The content of the invention

Technical problem to be solved

It is an object of the present invention to provide a kind of plasmas that can tackle substrate enlargement to occur module and comprising this The plasma processing apparatus of module.

In addition, another object of the present invention is to provide a kind of plasmas that may insure plasma density uniformity Module and the plasma processing apparatus comprising the module occur for body.

Solve the scheme of above-mentioned technical problem

Plasma in the present invention occur the high frequency electric source that module includes supply high frequency electric power, using the RF power as Basis generates the antenna of plasma to process space and is configured in non magnetic between the process space and the antenna The interval of body, the antenna and the nonmagnetic material is different according to region, wherein, the region is according to can make in the work Ordered spaces generate the plasma even density and set.

The first antenna and be configured that the antenna can include the middle section top for being configured in the nonmagnetic material The second antenna on the fringe region top of the nonmagnetic material.

First and second described antenna can be configured in same height, and the nonmagnetic material is configured in institute The thickness for stating the middle section on the downside of first antenna can be than being configured in the thickness of the fringe region on the downside of second antenna It is thick.

Module, which occurs, for the plasma can also include nonmagnetic material described in zoning, so that the nonmagnetic material is separated into Configure the framework in the second window of the first window and configuration edge region of middle section.

The thickness of first window can be thicker than the thickness of second window.

Second window can have the inclined surface from the region adjacent to first window towards another region.

The framework can make first and second described window mutually insulated.

The framework can include gas supply part and gas ejection hole, wherein, the gas supply part is formed with from outer The space for the process gases diffusion that portion is supplied to, the gas ejection hole make the process gases be sprayed to the process space.

First and second described window face is mutually parallel to can be configured as on one side for process space.

The nonmagnetic material can be made of multiple components being mutually disengaged.

The nonmagnetic material can include upper board, the lower panel for being separated by and configuring with the lower part of the upper board, in institute State the connecting plate that the upper board and the lower panel are connected between upper board and the lower panel.

The nonmagnetic material can also include the seal member for being configured contact site between the plates.

The nonmagnetic material can be formed in the interior thereof hollow.

The nonmagnetic material can include gas supply part and gas ejection hole, wherein, the gas supply part is formed with The space for the process gases diffusion being supplied to from outside, the gas ejection hole make the process gases be sprayed to the process space Go out.

The nonmagnetic material can include nonmagnetic material described in zoning, so that the nonmagnetic material is separated into configuration in center The framework of first window in region and the second window of configuration edge region.

First and second described window is configured to have same thickness, between the first antenna and first window Distance can be more remote than the distance between second antenna and second window.

First and second described antenna can be configured as with same height, and the thickness of first window can be than institute The thickness for stating the second window is thin.

Module, which occurs, for the plasma can also include to close on towards the nonmagnetic material in the process space The protection board that the mode of bottom surface is configured.

The protection board can be metal material.

On the other hand, the plasma processing apparatus in the present invention includes the chamber in the process space for forming substrate and in institute The plasma generation module that process space generates plasma is stated, wherein, it is high comprising supply that module occurs for the plasma The high frequency electric source of frequency electric power, based on the RF power to the process space generate the plasma antenna and by The interval of nonmagnetic material of the configuration between the process space and the antenna, the antenna and the nonmagnetic material is according to area Domain and it is different, wherein, the region according to can make the process space generate the plasma even density and Setting.

Technique effect

Module and the plasma processing apparatus comprising the module, which occur, for plasma according to the present invention can be handled greatly Type substrate, makes it possible the more uniform plasma of generation, has the effect that can manufacture substrate best in quality.

Effect present invention as described above is not limited to above-mentioned effect, and those skilled in the art can be by following Record other effects for being clearly understood that and not being mentioned.

Description of the drawings

Fig. 1 is the sectional view for the plasma processing apparatus for representing first embodiment.

Fig. 2 is that module occurs for the plasma for the first embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

Fig. 3 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

Fig. 4 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

Fig. 5 is that module occurs for the plasma for the fourth embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

Fig. 6 is the sectional view for the plasma processing apparatus for representing second embodiment.

Fig. 7 is that module occurs for the plasma for the first embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

Fig. 8 is that module occurs for the plasma for the first embodiment for representing the illustrated plasma processing apparatus of Fig. 6 The sectional view of metal window.

Fig. 9 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Fig. 6 The sectional view of metal window.

Figure 10 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Fig. 6 The sectional view of metal window.

Figure 11 is that module occurs for the plasma for the fourth embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

Figure 12 is that module occurs for the plasma for the 5th embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

Figure 13 is that module occurs for the plasma for the sixth embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

Figure 14 is that module occurs for the plasma for the 7th embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

Figure 15 is the sectional view for the plasma processing apparatus for representing 3rd embodiment.

Figure 16 is that module occurs for the plasma for the first embodiment for representing the illustrated plasma processing apparatus of Figure 15 Sectional view.

Figure 17 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Figure 15 Sectional view.

Figure 18 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Figure 15 Sectional view.

Figure 19 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Figure 15 Metal window sectional view.

Reference numeral

100：Plasma processing apparatus 110：Chamber

200：Module 210 occurs for plasma：Antenna

230：Metal window 250：Lid frame

270：Protection board

Specific embodiment

Hereinafter, the embodiment of the present invention is described in detail with reference to the accompanying drawings.But the present embodiment is not by following public affairs The embodiment opened is limited, but can be rendered as diversified form, and the present embodiment is intended to intactly disclose the present invention, is Commonsense technical staff provides complete invention scope.In addition, for explanation definitely, the image of the element of attached drawing Etc. there is the part that is turgidly showed, the element marked on attached drawing with same symbol represents same element.

Fig. 1 is the sectional view for the plasma processing apparatus for representing first embodiment, and Fig. 2 is to represent that Fig. 1 is illustrated etc. The sectional view of module occurs for the plasma of the first embodiment of gas ions processing unit.

As shown in Figures 1 and 2, plasma processing apparatus 100 (following, to be referred to as processing unit) bag of first embodiment Containing chamber 110.

Chamber 110 forms the shape of processing unit 100.Here, the inside of chamber 110 is formed with to handle substrate S's Space.The aluminium that chamber 110 can be anodized by inner wall is formed.

Also, the one side of chamber 110 can be equipped with the gate valve 111 to form the path for carrying-in/carrying-out substrate S.Only It is that this is to illustrate the present embodiment one embodiment, and chamber 110 can also be separated into lower chamber and opposing lower portions chamber The upper chamber of lifting, to form the path of carrying-in/carrying-out substrate S.

On the other hand, the pedestal 113 of supporting substrates S is configured with inside chamber 110.Pedestal 113 is configured in chamber 110 The lower part in portion can be simultaneously connected with biasing with high frequency electric source P1.Here, it can be installed for the temperature of control base board S on pedestal 113 The heater or cooler of degree.In addition, pedestal 113 can be supported by base support component 113a.Although here, do not illustrate, But base support component 113a extends to 110 outside of chamber so that pedestal 113 lifts inside chamber 110.

On the other hand, 110 upper area of chamber is configured with plasma generation module 200.Module 200 occurs for plasma Include antenna 210.

Antenna 210 can be configured in the upper area inside chamber 110.Here, antenna 210 can connect application high frequency The high frequency electric source P2 of electric power, and to be grounded on external state.Also, it can match somebody with somebody between antenna 210 and high frequency electric source P2 It is equipped with the adaptation A for carrying out impedance matching.Antenna 210 forms induction field based on RF power inside chamber 110.

On the other hand, 210 downside of antenna configures the metal window 230 of promising nonmagnetic material.Metal window 230 with chamber 110 The state of insulation is configured between antenna 210 and pedestal 113.In this way, antenna chamber 10 can be formed at 230 top of metal window, under It portion can be with formation process region, that is, process room 30.Here, metal window 230 can be by nonmagnetic material and conductive material structure Into, for example the material by aluminium or comprising aluminium forms.

Such metal window 230 can form induced electricity when antenna 210 is applied in RF power in process room 30 .For example, when antenna 210 is applied in RF power, vortex flow ring can be formed on the metal window 230 to insulate with chamber 110. That is, vortex flow is formed in the upper side of metal window 230, the surface of vortex flow along metal window 230 rotates and forms vortex flow ring. Here, the bottom surfaces in metal window 230 are that the electric current formed on the face with substrate S-phase pair can make to form sense inside process room 30 Answer electric field.

On the other hand, metal window 230 is supported on by lid frame 250 in chamber 110.250 bearing metal of lid frame The peripheral edge margin of window 230.Here, lid frame 250 can be made of dielectric, so that metal window 230 is mutually exhausted with chamber 110 Edge.In addition, lid frame 250 metal window 230 can be separated into it is multiple.For example, lid frame 250 can be clathrate, and And it is configured with metal window 230 in each lattice space.

Such lid frame 250 substantially can be box body, can be with configuring the gas feed unit outside chamber 110 50 connections.In this way, lid frame 250 can introduce process gases inside process room 30.More particularly, lid frame 250 Gas supply part 251 and gas ejection hole 253 can be included.

Gas supply part 251 can form the shape of lid frame 250.Here, gas supply part 251 and gas supply are single Member 50 connects, and process gases are introduced into from gas feed unit 50.In this way, process gases are in the inside of gas supply part 251 It is once spread, process gases are sprayed by being formed at the gas ejection hole 253 of 251 bottom surface of gas supply part to process room 30.

On the other hand, can be configured by the one side towards pedestal 113 of the separated multiple metal windows 230 of lid frame 250 In same height, and its respective thickness then can be different.

For example, it is configured as (following, referred to as the first metal of metal window 231 corresponding with the middle section of pedestal 113 Window) thickness can than be configured as corresponding with the fringe region of pedestal 113 metal window 233 (it is following, be referred to as the second metal Window) thickness it is thick.

In this way, work as based on first and second antenna 211,213 for being configured in same height in process room 30 When portion generates plasma, compared to the density for the plasma for being formed at 211 lower part of first antenna, the second antenna is formed at The density higher of the plasma of 213 lower parts.

That is, previous antenna exists because the density for resulting from the middle section of substrate S and the plasma of fringe region is mutual Mutually different, the density particularly compared to central plasma, the density of the plasma of fringe region is low, and is difficult to equably The problem of handling substrate S.But the processing unit 100 of the present embodiment, because its first and second metal window 231,233 thickness it Difference, so as to so as to result from the even density of the middle section of substrate S and the plasma of fringe region.

On the other hand, 230 top of metal window is configured with antenna support portion 240.It antenna support portion 240 can be by insulator structure Into, and support the bottom surfaces of antenna 210.Antenna support portion 240 can make the day for being individually configured in multiple 230 tops of metal window Line 210 is separated by with the state of insulation and metal window 230.

Also, the bottom surfaces of module 200 occur in plasma, i.e., pacify in the bottom surface of metal window 230 and lid frame 250 Equipped with protection board 270.The gas jetting hole 271 connected with gas ejection hole 253 is formed on protection board 270, so that process Gas be directed into inside process room 30.Such protection board 270 can be made of metal material or dielectric, and can It is formed by by using the fastening means of bolt etc. in a manner of it can depart from from metal window 230 and 250 bottom surface of lid frame.

Such protection board 270 can prevent from causing gold when resulting from the inductively coupled plasma inside process room 30 Belong to the damage of window 230 and lid frame 250, and preferably formed in a manner of not contacted with chamber 110.And in protection board 270 110 inner wall of side and chamber between be inserted into insulator so that the embodiment that protection board 270 and chamber 110 insulate is also feasible 's.

On the other hand, the various of module will occur to the plasma of the plasma processing apparatus of first embodiment below Embodiment be described in detail.Simply, the detailed description to above-mentioned inscape can be omitted, and uses same reference Symbol illustrates.

Fig. 3 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

As shown in figure 3, module 200, which occurs, for the plasma of second embodiment includes first and second metal window 231,233. The bottom surfaces of first and second metal window 231,233 can be configured in same height.

Here, being configured to the upper side of the first metal window 231 corresponding with the middle section of substrate S and bottom surfaces can be with It is formed with the tabular being mutually parallel.Also, the upper side of the second metal window 233 is configured to inclined surface.

For example, the second metal window 233 can have from the one side adjacent to the first metal window 231 towards the downward of opposite side Inclined surface, so that the density in the plasma of the fringe region generation of substrate S and the middle section in substrate S generated etc. The density of gas ions is same or similar.

At this point, because the thickness of the second metal window 233 is thinner more towards the edge direction of substrate S, so as to which existing benefit is It can solve the problems, such as that the density of plasma caused by the fringe region in process room 30 declines.

Fig. 4 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

As shown in figure 4, module 200, the metal window supported by lid frame 250 occur for the plasma of 3rd embodiment 230 can be unitarily formed.Here, single metal window 230 is configured to step.

For example, the upper side of single metal window 230 can have step.Here, step is configured to make its configuration The thickness for the middle section that the thickness ratio for having the fringe region of the second antenna 213 is configured with first antenna 211 is thin.

In this way, it is being configured in the plasma that is generated on the downside of the fringe region of the metal window 230 of 213 lower part of the second antenna Density with being configured in the close of the plasma generated on the downside of the middle section of the metal window 230 of 211 lower part of first antenna Degree can be same or similar.In this way, existing benefit is plasma caused by the fringe region that can be solved in process room 30 The problem of density of body declines.

In addition, though what is illustrated in the present embodiment is to configure first and second antenna on single 230 top of metal window 211st, 213 embodiment, but single antenna can be configured on single 230 top of metal window, in single metal window 230 generally form a vortex flow ring.

Fig. 5 is that module occurs for the plasma for the fourth embodiment for representing the illustrated plasma processing apparatus of Fig. 1 Sectional view.

As shown in figure 5, module 200, the metal window supported by lid frame 250 occur for the plasma of fourth embodiment 230 can be unitarily formed.Here, single metal window 230 is configured to inclined surface.

For example, the upper side of single metal window 230 can have inclined surface.Here, it is configured in first antenna 211 Region is entreated, its upper part face can be formed as tablet, but can be towards metal window in the fringe region for being configured with the second antenna 213 230 edge directions tilt down.

At this point, because the thickness of metal window 230 is thinner more towards the edge direction of substrate S, so as to existing benefit be can be with Solve the problems, such as that the density of plasma caused by the fringe region in process room 30 declines.

In addition, though what is illustrated in the present embodiment is to configure first and second antenna on single 230 top of metal window 211st, 213 embodiment, but single antenna can be configured on single 230 top of metal window, so that in single metal Window 230 generally forms a vortex flow ring.

On the other hand, the plasma processing apparatus of second embodiment will be illustrated below.

Fig. 6 is the sectional view for the plasma processing apparatus for representing second embodiment, and Fig. 7 is to represent that Fig. 6 is illustrated etc. The sectional view of module occurs for the plasma of the first embodiment of gas ions processing unit, Fig. 8 be represent the illustrated grades of Fig. 6 from The sectional view of the metal window of module occurs for the plasma of the first embodiment of daughter processing unit.

As shown in Figure 6 to 8, the plasma processing apparatus 100 of second embodiment includes chamber 110.

Chamber 110 forms the shape of processing unit 100.Here, the inside of chamber 110 is formed with to handle substrate S's Space.The aluminium that chamber 110 can be anodized by inner wall is formed.

Also, the one side of chamber 110 can be equipped with the gate valve 111 to form the path for carrying-in/carrying-out substrate S.Only It is that this is to illustrate the present embodiment one embodiment, and chamber 110 can also be separated into lower chamber and opposing lower portions chamber The upper chamber of lifting, to form the path of carrying-in/carrying-out substrate S.

On the other hand, the pedestal 113 of supporting substrates S is configured with inside chamber 110.Pedestal 113 is configured in chamber 110 The lower part in portion can be simultaneously connected with biasing with high frequency electric source P1.Here, it can be installed for the temperature of control base board S on pedestal 113 The heater or cooler of degree.In addition, pedestal 113 can be supported by base support component 113a.Although here, do not illustrate, But base support component 113a extends to 110 outside of chamber so that pedestal 113 lifts inside chamber 110.

On the other hand, 110 upper area of chamber is configured with plasma generation module 200.Module 200 occurs for plasma Include antenna 210.

Antenna 210 can be configured in the upper area inside chamber 110.Here, antenna 210 can connect application high frequency The high frequency electric source P2 of electric power, and to be grounded on external state.Also, it can match somebody with somebody between antenna 210 and high frequency electric source P2 It is equipped with the adaptation A for carrying out impedance matching.Antenna 210 forms induction field based on RF power inside chamber 110.

On the other hand, 210 downside of antenna is configured with internal with hollow metal window 230.Metal window 230 with chamber The state of 110 insulation is configured between antenna 210 and pedestal 113.In this way, antenna chamber 10 can be formed at 230 top of metal window, It lower part can be with formation process region, that is, process room 30.Here, metal window 230 can be by nonmagnetic material and conductive material It forms, for example the material by aluminium or comprising aluminium is formed.

Such metal window 230 can be made of component that is multiple detachable and assembling again.For example, metal window 230 can be with Include upper board W1, lower panel W2, connecting plate W3 and seal member R.

The lower part of the top of upper board W1 formation metal windows 230, lower panel W2 and upper board W1 are separated by and configure and formed The lower part of metal window 230.Also, connecting plate W3 makes upper board W1 be connected with lower panel W2 between upper board W1 and lower panel W2 It connects.Here, upper board W1, lower panel W2 and connecting plate W3 are formed in a manner of detachable, for example, can by using bolt or The fastening means of soldering etc. is can mutually to depart from.In addition, seal member R can be individually configured in upper board W1 and connecting plate Between W3, between connecting plate W3 and lower panel W2.

On the other hand, such metal window 230 is when antenna 210 is applied in RF power, can in process room 30 shape Into induction field.For example, when antenna 210 is applied in RF power, can be formed on the metal window 230 to insulate with chamber 110 Vortex flow ring.That is, vortex flow is formed in the upper side of metal window 230, the surface of vortex flow along metal window 230 rotates and formed Vortex flow ring.Here, the bottom surfaces in metal window 230 are that the electric current formed on the face with substrate S-phase pair can make process room 30 Inside forms induction field.

On the other hand, metal window 230 is supported on by lid frame 250 in chamber 110.250 bearing metal of lid frame The peripheral edge margin of window 230.Here, lid frame 250 can be made of dielectric, so that metal window 230 and 250 phase of lid frame Mutually insulation.In addition, lid frame 250 metal window 230 can be separated into it is multiple.For example, lid frame 250 can be grid Shape, and it is configured with metal window 230 in each lattice space.

On the other hand, multiple metal windows 230 form the path to 30 supply step gas of process room.For example, metal window 230 Gas supply part 230a and gas ejection hole 230c can be included.

Gas supply part 230a substantially can be box body and form the shape of metal window 230.Here, gas supply part 230a It is connected with gas feed unit 50, process gases are introduced into from gas feed unit 50.In this way, process gases are in gas supply part The inside of 230a is spread for the first time, and process gases are sprayed by being formed at the gas of the i.e. lower panel W2 in gas supply part 230a bottom surfaces The 230c that portals is sprayed to process room.

In this way, it is not required in the present embodiment since metal window 230 is formed as gas supply part inside chamber 110 Other gas supply part is installed.And for the function of performing gas supply part, during metal window 230 includes inside it Sky, thus due to the weight saving of itself of metal window 230, maintenance is made to become easy and favourable effect is generated to processing large substrate Fruit.

On the other hand, can be configured by the one side towards pedestal 113 of the separated multiple metal windows 230 of lid frame 250 In same height, and its respective thickness then can be different.

For example, it is configured as (following, referred to as the first metal of metal window 231 corresponding with the middle section of pedestal 113 Window) thickness can than be configured as corresponding with the fringe region of pedestal 113 metal window 233 (it is following, be referred to as the second metal Window) thickness it is thick.

In this way, work as based on first and second antenna 211,213 for being configured in same height in process room 30 When portion generates plasma, compared to the density for the plasma for being formed at 211 lower part of first antenna, the second antenna is formed at The density higher of the plasma of 213 lower parts.

That is, previous antenna exists because the density for resulting from the middle section of substrate S and the plasma of fringe region is mutual Mutually different, the density particularly compared to central plasma, the density of the plasma of fringe region is low, and is difficult to equably The problem of handling substrate S.But the processing unit of the present embodiment, because of the difference of the thickness of its first and second metal window 231,233, So as to so as to result from the even density of the middle section of substrate S and the plasma of fringe region.

On the other hand, 230 top of metal window is configured with antenna support portion 240.It antenna support portion 240 can be by insulator structure Into, and support the bottom surfaces of antenna 210.Antenna support portion 240 can make the day for being individually configured in multiple 230 tops of metal window Line 210 is separated by with the state of insulation and metal window 230.

Also, the bottom surfaces of module 200 occur in plasma, i.e., pacify in the bottom surface of metal window 230 and lid frame 250 Equipped with protection board 270.The gas jetting hole 271 connected with gas ejection hole 230c is formed on protection board 270, so that process Gas be directed into inside process room 30.Such protection board 270 can be made of metal material or dielectric, and can It is formed by by using the fastening means of bolt etc. in a manner of it can depart from from metal window 230 and 250 bottom surface of lid frame.

Such protection board 270 can prevent from causing gold when resulting from the inductively coupled plasma inside process room 30 Belong to the damage of window 230 and lid frame 250, and preferably formed in a manner of not contacted with chamber 110.And in protection board 270 110 inner wall of side wall and chamber between be inserted into insulator so that the embodiment that protection board 270 and chamber 110 insulate is also feasible 's.

On the other hand, the various of module will occur to the plasma of the plasma processing apparatus of second embodiment below Embodiment be described in detail.Simply, the detailed description to above-mentioned inscape can be omitted, and uses same reference Symbol illustrates.

Fig. 9 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Fig. 6 The sectional view of metal window.

As shown in figure 9, module 200, which occurs, for the plasma of second embodiment includes metal window 230.Metal window 230 can be with Include upper board W1, lower panel W2, connecting plate W3 and seal member R.

The lower part of the top of upper board W1 formation metal windows 230, lower panel W2 and upper board W1 are separated by and configure and formed The lower part of metal window 230.In addition, connecting plate W3 extends from the edge of upper board W1 towards lower panel W2.At this point, connecting plate W3 can To be connected to lower panel W2 tops.In addition, seal member R can be configured between connecting plate W3 and lower panel W2.

Here, lower panel W2 and connecting plate W3 can be by using the fastening means of bolt etc. in a manner of mutually departing Connection.

Figure 10 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Fig. 6 The sectional view of metal window.

As shown in Figure 10, the plasma generation module 200 of 3rd embodiment includes metal window 230.Metal window 230 can be with Include upper board W1, lower panel W2, connecting plate W3 and seal member R.

The lower part of the top of upper board W1 formation metal windows 230, lower panel W2 and upper board W1 are separated by and configure and formed The lower part of metal window 230.In addition, connecting plate W3 extends from lower panel W2 towards upper board W1.At this point, connecting plate W3 can be connected In upper board W1 lower parts.In addition, seal member R can be configured between upper board W1 and connecting plate W3.

Figure 11 is that module occurs for the plasma for the fourth embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

As shown in figure 11, module 200 occurs for the plasma of fourth embodiment, and lid frame 250 is formed to process room The path of 30 supply step gases.I.e. lid frame 250 can be formed as having inside it hollow, and include gas supply part 250a and gas ejection hole 250c.

Gas supply part 250a substantially can be box body and form the shape of lid frame 250.Here, gas supply part 250a is connected with gas feed unit 50, and process gases are introduced into from gas feed unit 50.In this way, process gases are supplied in gas It is spread for the first time to the inside of portion 250a, process gases are by being formed at the gas ejection holes of gas supply part 250a bottom surfaces 250c is sprayed to process room 30.

In addition, though be the function that gas supply part is performed by lid frame 250 in a second embodiment, but metal window 230 can still be formed as its it is internal have it is hollow, to mitigate the weight that module 200 occurs for plasma.In addition, metal window 230 can as needed and lid frame 250 performs the function of gas supply part together.That is, its metal window of processing unit 100 230 and lid frame 250 at least any one can perform to 30 internal spray process gases of process room gas supply The function in portion.

Figure 12 is that module occurs for the plasma for the 5th embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

As shown in figure 12, first and second metal that module 200 is included as box body occurs for the plasma of the 5th embodiment Window 231,233.The bottom surfaces of first and second metal window 231,233 can be configured in same height.

Here, being configured to the upper side of the first metal window 231 corresponding with the middle section of substrate S and bottom surfaces can be with It is formed with the tabular being mutually parallel.Also, the upper side of the second metal window 233 is configured to inclined surface.

For example, the second metal window 233 can have from the one side adjacent to the first metal window 231 towards the downward of opposite side Inclined surface, so that the density in the plasma of the fringe region generation of substrate S and the middle section in substrate S generated etc. The density of gas ions is same or similar.

At this point, because the thickness of the second metal window 233 is thinner more towards the edge direction of substrate S, so as to which existing benefit is It can solve the problems, such as that the plasma density for resulting from the fringe region of process room 30 declines.

Figure 13 is that module occurs for the plasma for the sixth embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

As shown in figure 13, module 200, the box body supported by lid frame 250 occur for the plasma of sixth embodiment Metal window 230 can be unitarily formed.Here, single metal window 230 is configured to step.

For example, the upper side of single metal window 230 can have step.Here, step is configured to make its configuration The thickness for the middle section that the thickness ratio for having the fringe region of the second antenna 213 is configured with first antenna 211 is thin.

In this way, it is being configured in the plasma that is generated on the downside of the fringe region of the metal window 230 of 213 lower part of the second antenna Density with being configured in the close of the plasma generated on the downside of the middle section of the metal window 230 of 211 lower part of first antenna Degree can be same or similar.In this way, existing benefit is plasma caused by the fringe region that can be solved in process room 30 The problem of density of body declines.

In addition, though what is illustrated in the present embodiment is to configure first and second antenna on single 230 top of metal window 211st, 213 embodiment, but single antenna can be configured on single 230 top of metal window, in single metal window 230 generally form a vortex flow ring.

Figure 14 is that module occurs for the plasma for the 7th embodiment for representing the illustrated plasma processing apparatus of Fig. 6 Sectional view.

As shown in figure 14, module 200, the box body supported by lid frame 250 occur for the plasma of the 7th embodiment Metal window 230 can be unitarily formed.Here, single metal window 230 is configured to inclined surface.

For example, the upper side of single metal window 230 can have inclined surface.Here, it is configured in first antenna 211 Region is entreated, its upper part face can be formed as tablet, but can be towards metal window in the fringe region for being configured with the second antenna 213 230 edge directions tilt down.

At this point, because the thickness of metal window 230 is thinner more towards the edge direction of substrate S, so as to existing benefit be can be with Solve the problems, such as that the density of plasma caused by the fringe region in process room 30 declines.

In addition, though what is illustrated in the present embodiment is to configure first and second antenna on single 230 top of metal window 211st, 213 embodiment, but single antenna 210 can be configured on single 230 top of metal window, so that in single gold Belong to window 230 and generally form a vortex flow ring.

On the other hand, the plasma processing apparatus of 3rd embodiment will be illustrated below.

Figure 15 is the sectional view for the plasma processing apparatus for representing 3rd embodiment, and Figure 16 is to represent that Figure 15 is illustrated The sectional view of module occurs for the plasma of the first embodiment of plasma processing apparatus.

As shown in Figure 15 and Figure 16, the plasma processing apparatus 100 (following, to be referred to as processing unit) of 3rd embodiment Include chamber 110.

Chamber 110 forms the shape of processing unit 100.Here, the inside of chamber 110 is formed with to handle substrate S's Process space.The aluminium that chamber 110 can be anodized by inner wall is formed.

Also, the one side of chamber 110 can be equipped with the gate valve 111 to form the path for carrying-in/carrying-out substrate S.Only It is that this is to illustrate the present embodiment one embodiment, and chamber 110 can also be separated into lower chamber and opposing lower portions chamber The upper chamber of lifting, to form the path of carrying-in/carrying-out substrate S.

On the other hand, the pedestal 113 of supporting substrates S is configured with inside chamber 110.Pedestal 113 is configured in chamber 110 The lower part in portion can be simultaneously connected with biasing with high frequency electric source P1.Here, the temperature for control base board can be installed on pedestal 113 Heater or cooler.In addition, pedestal 113 can be supported by base support component 113a.Here, though it is not illustrated, It is that base support component 113a extends to 110 outside of chamber so that pedestal 113 lifts inside chamber 110.

On the other hand, 110 upper area of chamber is configured with plasma generation module 200.Module 200 occurs for plasma Include antenna 210.

Antenna 210 can be configured in the upper area inside chamber 110.Here, antenna 210 can connect application high frequency The high frequency electric source P2 of electric power, and to be grounded on external state.Also, it can match somebody with somebody between antenna 210 and high frequency electric source P2 It is equipped with the adaptation A for carrying out impedance matching.Antenna 210 forms induction field based on RF power inside chamber 110.

On the other hand, 210 downside of antenna configures the metal window 230 of promising nonmagnetic material.Metal window 230 with chamber 110 The state of insulation is configured between antenna 210 and pedestal 113.In this way, antenna chamber 10 can be formed at 230 top of metal window, under It portion can be with formation process region, that is, process room 30.Here, metal window 230 can be by nonmagnetic material and conductive material structure Into, for example the material by aluminium or comprising aluminium forms.

Such metal window 230 can form induced electricity when antenna 210 is applied in RF power in process room 30 .For example, when antenna 210 is applied in RF power, vortex flow ring can be formed on the metal window 230 to insulate with chamber 110. That is, vortex flow is formed in the upper side of metal window 230, the surface of vortex flow along metal window 230 rotates and forms vortex flow ring. Here, the bottom surfaces in metal window 230 are that the electric current formed on the face with substrate S-phase pair can make to form sense inside process room 30 Answer electric field.

On the other hand, metal window 230 is supported on by lid frame 250 in chamber 110.250 bearing metal of lid frame The peripheral edge margin of window 230.Here, lid frame 250 can be made of dielectric, so that metal window 230 is mutually exhausted with chamber 110 Edge.In addition, lid frame 250 metal window 230 can be separated into it is multiple.For example, lid frame 250 can be clathrate, and And it is configured with metal window 230 in each lattice space.

Such lid frame 250 be configured to it is internal have it is hollow, and can be with configuring the gas outside chamber 110 Object supply unit 50 connects.In this way, lid frame 250 can introduce process gases inside process room 30.More particularly, cover Subframe 250 can include gas supply part 251 and gas ejection hole 253.

Gas supply part 251 can form the shape of lid frame 250.Here, gas supply part 251 and gas supply are single Member 50 connects, and process gases are introduced into from gas feed unit 50.In this way, process gases are in the inside of gas supply part 251 It is once spread, process gases are sprayed by being formed at the gas ejection hole 253 of 251 bottom surface of gas supply part to process room 30.

On the other hand, it is configured in by the antenna 210 on separated each multiple 230 tops of metal window of lid frame 250 Height can be mutually different.

For example, metal window 230, which can include, is configured as first metal window 231 corresponding with the middle section of pedestal 113 And it is configured as second metal window 233 corresponding with the fringe region of pedestal 113.Here, first and second metal window 231,233 It is configured to that there is same thickness, so that upper side and bottom surfaces are configured on the same line.

At this point, it is configured in the antenna (following, be referred to as first antenna) on 231 top of the first metal window and is configured in the The antenna (following, to be referred to as the second antenna) on two metal windows, 233 top, the height each away from metal window 230 can be different.Example Such as, the distance between 211 and first metal window 231 of first antenna D1 can be formed as than the second antenna 213 and the second metal window The distance between 233 D2 are remote.

In this way, plasma is generated inside process room 30 based on the first metal window 231 and the second metal window 233 When, compared to the density for the plasma for being formed at 231 lower part of the first metal window, be formed at 233 lower part of the second metal window etc. The density higher of gas ions.

That is, previous antenna exists because the density for resulting from the middle section of substrate S and the plasma of fringe region is mutual Mutually different, the density particularly compared to central plasma, the density of the plasma of fringe region is low, and is difficult to equably The problem of handling substrate S.But in the present embodiment, because of the interval and second between 211 and first metal window 231 of first antenna Interval between 213 and second metal window 233 of antenna is mutually different, so as to so as to result from middle section and the side of substrate S The even density of the plasma in edge region.

On the other hand, 230 top of metal window is configured with antenna support portion 240.It antenna support portion 240 can be by insulator structure Into, and support the bottom surfaces of antenna 210.In this way, antenna support portion 240 can make to be individually configured on multiple metal windows 230 The antenna 210 in portion is separated by with the state of insulation and metal window 230.

Also, the bottom surfaces of module 200 occur in plasma, i.e., pacify in the bottom surface of metal window 230 and lid frame 250 Equipped with protection board 270.The gas jetting hole 271 connected with gas ejection hole 253 is formed on protection board 270, so that process Gas be directed into inside process room 30.Such protection board 270 can be made of metal material or dielectric, and can It is formed by by using the fastening means of bolt etc. in a manner of it can depart from from metal window 230 and 250 bottom surface of lid frame.

In this way, protection board 270 can prevent from causing gold when resulting from the inductively coupled plasma inside process room 30 Belong to the damage of window 230 and lid frame 250, and preferably formed in a manner of not contacted with chamber 110.And in protection board 270 110 inner wall of side and chamber between be inserted into insulator so that the embodiment that protection board 270 and chamber 110 insulate is also feasible 's.

On the other hand, the various of module will occur to the plasma of the plasma processing apparatus of 3rd embodiment below Embodiment be described in detail.Simply, the detailed description to above-mentioned inscape can be omitted, and uses same reference Symbol illustrates.

Figure 17 is that module occurs for the plasma for the second embodiment for representing the illustrated plasma processing apparatus of Figure 15 Sectional view.

As shown in figure 17, module 200 occurs for the plasma of second embodiment, is configured on each metal window 230 The height of the antenna 210 in portion can be identical.That is, configure in the first antenna 211 of 231 upside of the first metal window and configuration second Second antenna 213 of 230 upside of metal window can be configured on the same line.

Here, when 211 and second antenna 213 of first antenna is configured on the same line, the first metal window 231 and Two metal windows 233 can be formed in different thickness.That is, the thickness of the first metal window 231 can be formed as than the second metal window 233 thickness is thin, so as to which the distance between 211 and first metal window 231 of first antenna D1 can be formed as than the second antenna 213 The distance between second metal window 233 D2 is remote.

In this way, plasma is generated inside process room 30 based on the first metal window 231 and the second metal window 233 When, compared to the density for the plasma for being formed at 231 lower part of the first metal window, be formed at 233 lower part of the second metal window etc. The density higher of gas ions.In this way, the density contrast of the plasma formed in the past in middle section and fringe region can be solved, And have because equably plasma density can manufacture the benefit of substrate S best in quality.

Figure 18 is that module occurs for the plasma for the 3rd embodiment for representing the illustrated plasma processing apparatus of Figure 15 Sectional view, Figure 19 be the 3rd embodiment for representing the illustrated plasma processing apparatus of Figure 15 plasma occur module Metal window sectional view.

As shown in Figure 18 and Figure 19, module 200 occurs for the plasma of 3rd embodiment, and 230 inside of metal window has It is hollow, and metal window 230 forms the path of supply gas.For example, internal there is hollow metal window 230 can include gas Supply unit 230a and gas ejection hole 230c.

Gas supply part 230a can form the shape of metal window 230.Here, gas supply part 230a and gas supply are single Member 50 connects, and process gases are introduced into from gas feed unit 50.In this way, process gases are in the inside of gas supply part 230a It is once spread, process gases are sprayed by being formed at the gas ejection hole 230c of gas supply part 230a bottom surfaces to process room 30 Go out.

In this way, it is not required in the present embodiment since metal window 230 forms gas supplying path inside chamber 110 Other gas supply part is installed.And metal window 230 be formed in the interior thereof it is hollow, thus due to metal window 230 itself Weight saving makes maintenance become easy and generates favourable effect to processing large substrate.

Also, such metal window 230 can be made of component that is multiple detachable and assembling again.For example, metal window 230 Upper board W1, lower panel W2, connecting plate W3 and seal member R can be included.

The lower part of the top of upper board W1 formation metal windows 230, lower panel W2 and upper board W1 are separated by and configure and formed The lower part of metal window 230.Also, connecting plate W3 makes upper board W1 be connected with lower panel W2 between upper board W1 and lower panel W2 It connects.

Here, upper board W1, lower panel W2 and connecting plate W3 are formed in a manner of detachable, such as can be by using spiral shell The fastening means of bolt or soldering etc. is can mutually to depart from.In addition, seal member R can be individually configured in upper board W1 and company Between fishplate bar W3, between connecting plate W3 and lower panel W2.

As a result, because plasma generation module 200 can be split and be assembled again, so that maintenance efficiency gets a promotion.

In conclusion module occurs for plasma according to the present invention and plasma processing apparatus comprising the module can To handle large substrate, make it possible the more uniform plasma of generation, substrate best in quality can be manufactured by having Effect.

One embodiment of the present of invention as previously described and shown in the drawings, it is not possible to be construed to limit the present invention Technological thought.Protection scope of the present invention is only limited by content recorded in claims, is had belonging to the present invention The technical staff of the common sense of technical field can carry out various improvement to the technological thought of the present invention and change.So long as change Good and change is self-evident for commonsense technical staff, is just considered as belonging to the scope of protection of the present invention.

Claims (20)

1. module occurs for a kind of plasma, which is characterized in that includes：

The high frequency electric source of supply high frequency electric power；

The antenna of plasma is generated to process space based on the RF power；And

The nonmagnetic material being configured between the process space and the antenna,

The interval of the antenna and the nonmagnetic material is different according to region, wherein, the region is according to can make described Process space generate the plasma even density and set.

2. module occurs for plasma according to claim 1, which is characterized in that

The first antenna and be configured in described non-that the antenna includes the middle section top for being configured in the nonmagnetic material Second antenna on the fringe region top of magnetic substance.

3. module occurs for plasma according to claim 2, which is characterized in that

First and second described antenna is configured in same height,

The nonmagnetic material, the thickness ratio for being configured in the middle section on the downside of the first antenna are configured in described second The thickness of fringe region on the downside of antenna is thick.

4. module occurs for plasma according to claim 3, which is characterized in that

Also comprising nonmagnetic material described in zoning, so that the nonmagnetic material is separated into configuration in the first window of middle section and configuration The framework of second window of edge region.

5. module occurs for plasma according to claim 4, which is characterized in that

The thickness of second window described in the thickness ratio of first window is thick.

6. module occurs for plasma according to claim 4, which is characterized in that

Second window has the inclined surface from the region adjacent to first window towards another region.

7. module occurs for plasma according to claim 4, which is characterized in that

The framework makes first and second described window mutually insulated.

8. module occurs for plasma according to claim 4, which is characterized in that

The framework includes gas supply part and gas ejection hole, wherein, the gas supply part, which is formed with from outside, to be supplied to Process gases diffusion space, the gas ejection hole makes the process gases be sprayed to the process space.

9. module occurs for plasma according to claim 4, which is characterized in that

First and second described window face is configured as being mutually parallel on one side to the process space.

10. module occurs for plasma according to claim 1, which is characterized in that

The nonmagnetic material is made of multiple components being mutually disengaged.

11. module occurs for plasma according to claim 10, which is characterized in that

The nonmagnetic material includes：

Upper board；

The lower panel for being separated by and configuring with the lower part of the upper board；

The upper board and the connecting plate of the lower panel are connected between the upper board and the lower panel.

12. module occurs for plasma according to claim 11, which is characterized in that

The nonmagnetic material is also comprising the seal member for being configured contact site between the plates.

13. module occurs for plasma according to claim 1, which is characterized in that

The nonmagnetic material is formed in the interior thereof hollow.

14. module occurs for plasma according to claim 13, which is characterized in that

The nonmagnetic material includes gas supply part and gas ejection hole, wherein, the gas supply part is formed with from external quilt The space of the process gases diffusion of supply, the gas ejection hole make the process gases be sprayed to the process space.

15. module occurs for plasma according to claim 2, which is characterized in that

The nonmagnetic material includes nonmagnetic material described in zoning, so that the nonmagnetic material is separated into configuration the of middle section The framework of one window and the second window of configuration edge region.

16. module occurs for plasma according to claim 15, which is characterized in that

First and second described window is configured to have same thickness,

The distance between the first antenna and first window are more remote than the distance between second antenna and second window.

17. module occurs for plasma according to claim 15, which is characterized in that

First and second described antenna is configured with same height, the thickness of the second window described in the thickness ratio of first window It spends thin.

18. module occurs for plasma according to claim 1, which is characterized in that

Also comprising the protection board being configured in a manner of closing on the bottom surface towards the nonmagnetic material in the process space.

19. module occurs for plasma according to claim 18, which is characterized in that

The protection board is metal material.

20. a kind of plasma processing apparatus, which is characterized in that

Comprising：Form the chamber in the process space of substrate；And

Module occurs for the plasma that plasma is generated in the process space,

Wherein, the plasma generation module includes：

The high frequency electric source of supply high frequency electric power；

The antenna of the plasma is generated to the process space based on the RF power；And

The nonmagnetic material being configured between the process space and the antenna,

The interval of the antenna and the nonmagnetic material is different according to region, wherein, the region is according to can make described Process space generate the plasma even density and set.