CN108060459A - A kind of lithium tantalate substrate melanism method - Google Patents
A kind of lithium tantalate substrate melanism method Download PDFInfo
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- CN108060459A CN108060459A CN201710880277.1A CN201710880277A CN108060459A CN 108060459 A CN108060459 A CN 108060459A CN 201710880277 A CN201710880277 A CN 201710880277A CN 108060459 A CN108060459 A CN 108060459A
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- lithium tantalate
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 65
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 208000003351 Melanosis Diseases 0.000 title claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 18
- 239000010959 steel Substances 0.000 claims abstract description 18
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 16
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 230000009467 reduction Effects 0.000 claims abstract description 11
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000001603 reducing effect Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000028161 membrane depolarization Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005616 pyroelectricity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002336 repolarization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of lithium tantalate substrate melanism methods, and a kind of glue and high-purity lithium carbonate powder are pressed 1~4：1~1.2 ratio mixing, the two sides of pending lithium tantalate substrate is evenly applied to by the method for hairbrush smearing silk, it is then placed in rustless steel container, reduction Darkening process is carried out to pending lithium tantalate substrate in the case where flow is 10~30L/min nitrogen atmosphere and under the conditions of less than the Curie temperature of pending lithium tantalate substrate.The present invention carries out reduction Darkening process under the conditions of the Curie temperature of lithium tantalate substrate to pending lithium tantalate or lithium columbate crystal substrate.Weaken its electrical property of heat releasing by Darkening process, so as to reduce SAW filter part manufacture cost and improve production efficiency.
Description
Technical field
The present invention relates to a kind of crystalline material melanism methods, and in particular to a kind of lithium tantalate substrate melanism method.
Background technology
At present, lithium tantalate（LiTaO3, LT）And lithium niobate（LiNbO3, LN）Crystal is that a kind of piezoelectricity, ferroelectricity, heat of collecting is released
The functions such as electric, non-linear, electric light, photoelastic, Preset grating are steady with good thermal stability and chemistry in the multifunctional material of one
It is qualitative.Being widely applied in the fields such as SAW device, optical communication, laser and photoelectron at present.Particularly make
For piezoelectric chip material, by annealing, polarizing, orienting, cutting, it is round as a ball, do the processes such as reference plane, multi-wire saw, grinding, polishing
Made substrate slice has excellent piezoelectric property, can make surface acoustic wave on the substrate slice mirror-finished（SAW）With
Bulk wave（BAW）Device.But the performances such as high pyroelectricity and light transmission can also increase element manufacturing cost and reduce production yield.
The pyroelectric coefficient of LT, LN crystal is respectively 23x10-5And 4x10-5C/（m2.K）, untreated LT, LN crystal substrates of tradition
Resistivity height (1013~1015Ωcm).It is a large amount of so that LT, LN substrate surface generate for temperature change in SAW device production process
Charge and can not quick release guide, be easy to cause between SAW device comb electrode and strike sparks, cause the yields of device to reduce,
It is serious substrate slice to be caused to crack, it is difficult to make the SAW device of more than 1GHz；In addition, the high transmittance of LT, LN substrate, makes
Light is generated in substrate back compared with strong reflection to front after penetrating substrate, causes point for reducing comb electrode pattern in a photolithographic process
Resolution need to plate extinction film in chip back surface.Although surface charge accumulation can be by surrounding as caused by the pyroelectricity of LT, LN crystal
Free charging neutrality, but a few hours are generally required to ten a few houres；Also can be designed by SAW device or in element manufacturing
Temperature fluctuation is reduced in the process, but can increase device cost and reduce production efficiency, is not suitable for batch production.
Research shows, the electrical conductivity and color of LT, LN undergo be heat-treated when with existing oxygen vacancy concentration in crystal
And change.Chip is in hydrogen or other inert gas atmospheres, and the oxygen in chip is under the action of reducing agent among chip
Past external diffusion, improves the concentration of Lacking oxygen, and Lacking oxygen obtains one and electronically forms F colour centers（F+）, enhance electrical conductivity（Also
Resistivity is reduced, resistivity and electrical conductivity are reciprocal relations）, while colour center visible light region absorb it is stronger, make chip by
Water white transparency becomes brown or black.Therefore this preprocess method is also referred to as " melanism "." melanism " processing can effectively drop
The resistivity of low LT, LN crystal or substrate slice prepares LT, LN crystal base of no electrical property of heat releasing to weaken its electrical property of heat releasing
Piece.It reduces SAW filter part manufacture cost and improves production efficiency.
United States Patent (USP) US6319430 proposes mobility reducing atmosphere high temperature heat treatment LN, LT crystalline substance in hydrogen composition
The method of piece, such process efficiency is higher, but the danger that the hydrogen used in reducing process easily sets off an explosion, therefore to equipment
It is more demanding, and the phenomenon that high-temperature heat treatment is also susceptible to depolarization for LT.
Pure metals C of Japan Patent JP2003-394575, JP2003-104176 the proposition use with strong reducing property,
The powder package that Si, Mg, Al, Ca, Ti etc. be a kind of or at least one reducing agent is formed is covered in that be put into above-mentioned Si, C, Ti etc. above-mentioned
LT crystal crystal bar or LT substrate slices in a kind of either at least one container carry out reduction Darkening process LT crystal and crystal base
Piece.Technique is on the other hand difficult control pure metals due on the one hand adding material cost using package coverage mode
Excessive oxidation, be easy to cause the destruction of LT crystal piezoelectric properties.
Japan Patent JP2004-061862 is proposed is embedded in carbon dust or is placed in carbon by the LT chips of blank form
In container, then under the conditions of inertia or reducibility gas, at heat when maintaining 650 DEG C to 1650 DEG C of temperature at least 4 small
Reason process.Technique is although the LT slice resistivities of such method preparation are relatively low, and pyroelectric effect substantially eliminates, but chip is
Through depolarization, it is necessary to which repolarization, adds processing step and cost.
Japan Patent JP2004-002853 propose in reducing atmosphere or inert atmosphere to LT chips, LT polycrystalline ceramics,
The condensed state matters such as hydrogen storage material are handled higher than (700~1200 DEG C) drastic reduction under Curie temperature, then by drastic reduction
Condensed state LT chips and pending LT substrate slices carry out it is overlapping be placed in the reducing atmospheres such as vacuum or hydrogen carry out it is black
Change is handled, and technique need to process wafer grinding, Pingdu is required high, it is difficult to ensure that two kinds of chips fit closely, technique effect
Rate is low and manufacture cost is big.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of lithium tantalate substrate melanism method, in lithium tantalate
Reduction Darkening process is carried out to pending lithium tantalate or lithium columbate crystal substrate under the conditions of the Curie temperature of substrate.At melanism
Reason weakens its electrical property of heat releasing, so as to reduce SAW filter part manufacture cost and improve production efficiency.
The technical proposal for solving the technical problem of the invention is：A kind of lithium tantalate substrate melanism method, by one
Kind glue presses 1~4 with high-purity lithium carbonate powder：1~1.2 ratio mixing, the method that silk is smeared by hairbrush uniformly coat
It in the two sides of pending lithium tantalate substrate, is then placed in rustless steel container, is 10~30L/min nitrogen atmospheres in flow
Vat black is carried out to pending lithium tantalate substrate down and less than under the conditions of the Curie temperature of pending lithium tantalate substrate
Change is handled, and is as follows：
1) glue, high-purity lithium carbonate powder are pressed 1~4：1~1.2 ratio mixing；
2) said mixture is evenly applied to treat to the two of the lithium tantalate substrate of Darkening process by the method that hairbrush is smeared
Face；
3) the lithium tantalate substrate for having been coated with completing is put into baking oven to dry, is placed in rustless steel container；
4) rustless steel container equipped with the lithium tantalate substrate is put into heat-treatment furnace；
5) flowing gas valve and water seal valve are opened, the nitrogen of flowing is filled with the rate of 10~30L/min, and described in holding
More than the water seal pressure 2KPa of heat-treatment furnace；
6) heat-treatment furnace described in is warming up between 300~550 DEG C, according to the heating rate for starting 70 DEG C/H with room temperature at heat
When reason 6~8 is small；
7) room temperature to be down to closes the flowing gas valve and water seal valve, opens heat-treatment furnace, takes out lithium tantalate
Substrate, Darkening process are completed.
As a preferred embodiment, the high-purity lithium carbonate powder is higher than 99.99% pure lithium carbonate powder for purity.
As a preferred embodiment, less than under the conditions of the Curie temperature of pending lithium tantalate substrate to pending lithium tantalate or
Lithium columbate crystal substrate carries out reduction Darkening process, wherein less than pending lithium tantalate or the Curie temperature of lithium columbate crystal substrate
To be Celsius between 300~550 DEG C.
As a preferred embodiment, the pending lithium tantalate is not more than for disk of the diameter less than 300mm or length and width
300mm rectangular sheets.
It is can also be applied to lithium columbate crystal substrate melanism.
The beneficial effects of the invention are as follows:Under the conditions of the Curie temperature of lithium tantalate substrate to pending lithium tantalate or
Lithium columbate crystal substrate carries out reduction Darkening process.Weaken its electrical property of heat releasing by Darkening process, so as to reduce SAW filtering
Device manufactures cost and improves production efficiency.
Specific embodiment
Embodiment 1：A kind of glue and high-purity lithium carbonate powder are pressed 4 by a kind of lithium tantalate substrate melanism method：1
Ratio mixing, the method that silk is smeared by hairbrush is evenly applied to the two sides of pending lithium tantalate substrate, be then placed in
In rustless steel container, the Curie temperature item in the case where flow is 10L/min nitrogen atmosphere and less than pending lithium tantalate substrate
Reduction Darkening process is carried out to pending lithium tantalate substrate under part, is as follows：
1) glue, high-purity lithium carbonate powder are pressed 4：1 ratio mixing；
2) said mixture is evenly applied to treat to the two of the lithium tantalate substrate of Darkening process by the method that hairbrush is smeared
Face；
3) the lithium tantalate substrate for having been coated with completing is put into baking oven to dry, is placed in rustless steel container；
4) rustless steel container equipped with the lithium tantalate substrate is put into heat-treatment furnace；
5) flowing gas valve and water seal valve are opened, the nitrogen of flowing is filled with the rate of 10L/min, and is kept at the heat
Manage more than the water seal pressure 2KPa of stove；
6) heat-treatment furnace described in is warming up to 460 DEG C, when heat treatment 6 is small according to the heating rate for starting 70 DEG C/H with room temperature；
7) room temperature to be down to closes the flowing gas valve and water seal valve, opens heat-treatment furnace, takes out lithium tantalate
Substrate, Darkening process are completed.
Wherein high-purity lithium carbonate powder is higher than 99.99% pure lithium carbonate powder for purity.The pending lithium tantalate
Crystal is not more than 300mm rectangular sheets for disk of the diameter less than 300mm or length and width.
The chip of room temperature state is placed in 80 DEG C of heating plate and carries out thermal cycling test, the result is that：It is put by substrate
In the surface potential that the moment in heating plate occurs in below 500V, pyrophoric behavio(u)r is had no on the surface of the substrate.Volume resistivity
About 1011Ω cm or so visually observe, it is uneven not to generate form and aspect.
Embodiment 2：Second of lithium tantalate substrate melanism method, first by glue, high-purity lithium carbonate powder according to
3:It is coated on and treated on the lithium tantalate substrate of Darkening process by the method that hairbrush is smeared after 1 ratio mixing, is placed in not
It becomes rusty in steel container, then this rustless steel container is placed in heat-treatment furnace, in the case where flow is the nitrogen atmosphere of 10L/min, by 70
DEG C/rate of H be warming up to heat treatment 6 at a temperature of 460 DEG C of holding it is small when, be down to room temperature afterwards and take out chip.Other and implementation
Example 1 is identical.
Embodiment 3：The third lithium tantalate substrate melanism method, first by glue, high-purity lithium carbonate powder according to
2:It is coated on and treated on the lithium tantalate or lithium columbate crystal substrate of Darkening process by the method that hairbrush is smeared after 1 ratio mixing,
It is placed in rustless steel container, then this rustless steel container is placed in heat-treatment furnace, in the nitrogen atmosphere that flow is 10L/min
Under, when being warming up to that heat treatment 6 is small at a temperature of 460 DEG C of holding by the rate of 70 DEG C/H, room temperature is down to afterwards and takes out chip.It is other
It is same as Example 1.
Embodiment 4：4th kind of lithium tantalate substrate melanism method, first by glue, high-purity lithium carbonate powder according to
1:It is coated on and treated on the lithium tantalate or lithium columbate crystal substrate of Darkening process by the method that hairbrush is smeared after 1 ratio mixing,
It is placed in rustless steel container, then this rustless steel container is placed in heat-treatment furnace, in the nitrogen atmosphere that flow is 10L/min
Under, when being warming up to that heat treatment 6 is small at a temperature of 460 DEG C of holding by the rate of 70 DEG C/H, room temperature is down to afterwards and takes out chip.It is other
It is same as Example 1.
Embodiment 5：5th kind of lithium tantalate substrate melanism method, first by glue, high-purity lithium carbonate powder according to
1:It is coated on after 1.2 ratio mixing by the method that hairbrush is smeared and treats the lithium tantalate of Darkening process or lithium columbate crystal substrate
On, it is placed in rustless steel container, then this rustless steel container is placed in heat-treatment furnace, in the nitrogen that flow is 10L/min
Under atmosphere, when being warming up to that heat treatment 6 is small at a temperature of 460 DEG C of holding by the rate of 70 DEG C/H, room temperature is down to afterwards and takes out chip.
Secondly, the chip of room temperature state is placed in 80 DEG C of heating plate and carries out thermal cycling test.Its is other same as Example 1.
Claims (4)
- A kind of 1. lithium tantalate substrate melanism method, which is characterized in that by a kind of glue and high-purity lithium carbonate powder by 1~ 4：1~1.2 ratio mixing is evenly applied to the two sides of pending lithium tantalate substrate by the method for hairbrush smearing silk, It is then placed in rustless steel container, in the case where flow is 10~30L/min nitrogen atmosphere and less than pending lithium tantalate substrate Curie temperature under the conditions of reduction Darkening process is carried out to pending lithium tantalate substrate, be as follows：1) glue, high-purity lithium carbonate powder are pressed 1~4：1~1.2 ratio mixing；2) said mixture is evenly applied to treat to the two of the lithium tantalate substrate of Darkening process by the method that hairbrush is smeared Face；3) the lithium tantalate substrate for having been coated with completing is put into baking oven to dry, is placed in rustless steel container；4) rustless steel container equipped with the lithium tantalate substrate is put into heat-treatment furnace；5) flowing gas valve and water seal valve are opened, the nitrogen of flowing is filled with the rate of 10~30L/min, and described in holding More than the water seal pressure 2KPa of heat-treatment furnace；6) heat-treatment furnace described in is warming up between 300~550 DEG C, according to the heating rate for starting 70 DEG C/H with room temperature at heat When reason 6~8 is small；7) room temperature to be down to closes the flowing gas valve and water seal valve, opens heat-treatment furnace, takes out lithium tantalate Substrate, Darkening process are completed.
- 2. the Darkening process method of lithium tantalate substrate according to claim 1, it is characterised in that：The high purity carbon Sour lithium powder is higher than 99.99% pure lithium carbonate powder for purity.
- 3. the Darkening process method of lithium tantalate substrate according to claim 1, it is characterised in that：Less than pending tantalum Reduction Darkening process is carried out to pending lithium tantalate or lithium columbate crystal substrate under the conditions of the Curie temperature of sour crystalline lithium substrate, In less than pending lithium tantalate or lithium columbate crystal substrate Curie temperature to be Celsius between 300~550 DEG C.
- 4. the Darkening process method of lithium tantalate substrate according to claim 1, it is characterised in that：The pending tantalum Sour crystalline lithium is not more than 300mm rectangular sheets for disk of the diameter less than 300mm or length and width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710880277.1A CN108060459A (en) | 2017-09-26 | 2017-09-26 | A kind of lithium tantalate substrate melanism method |
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| CN201710880277.1A CN108060459A (en) | 2017-09-26 | 2017-09-26 | A kind of lithium tantalate substrate melanism method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624961A (en) * | 2018-05-29 | 2018-10-09 | 中国电子科技集团公司第二十六研究所 | A kind of recycling method of lithium tantalate black-film |
| CN112376114A (en) * | 2020-10-15 | 2021-02-19 | 天通控股股份有限公司 | Single-domain method for large-size lithium tantalate crystals |
| CN114481330A (en) * | 2022-02-09 | 2022-05-13 | 天通瑞宏科技有限公司 | Reduction method, product and application of piezoelectric substrate for surface acoustic wave filter |
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| CN105463581A (en) * | 2015-11-30 | 2016-04-06 | 上海召业申凯电子材料有限公司 | Blackening method for lithium tantalite crystal substrate |
| CN106048735A (en) * | 2016-08-12 | 2016-10-26 | 天通控股股份有限公司 | Blackening method for lithium tantalate or lithium niobate crystal substrate |
| CN106521633A (en) * | 2016-12-26 | 2017-03-22 | 福建晶安光电有限公司 | Blackening method of lithium tantalate crystal substrate |
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2017
- 2017-09-26 CN CN201710880277.1A patent/CN108060459A/en active Pending
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| CN105463581A (en) * | 2015-11-30 | 2016-04-06 | 上海召业申凯电子材料有限公司 | Blackening method for lithium tantalite crystal substrate |
| CN106048735A (en) * | 2016-08-12 | 2016-10-26 | 天通控股股份有限公司 | Blackening method for lithium tantalate or lithium niobate crystal substrate |
| CN106521633A (en) * | 2016-12-26 | 2017-03-22 | 福建晶安光电有限公司 | Blackening method of lithium tantalate crystal substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624961A (en) * | 2018-05-29 | 2018-10-09 | 中国电子科技集团公司第二十六研究所 | A kind of recycling method of lithium tantalate black-film |
| CN108624961B (en) * | 2018-05-29 | 2020-06-30 | 中国电子科技集团公司第二十六研究所 | Method for recycling lithium tantalate black chips |
| CN112376114A (en) * | 2020-10-15 | 2021-02-19 | 天通控股股份有限公司 | Single-domain method for large-size lithium tantalate crystals |
| WO2022077546A1 (en) * | 2020-10-15 | 2022-04-21 | 天通控股股份有限公司 | Large-size lithium tantalate crystal single domain method |
| CN114481330A (en) * | 2022-02-09 | 2022-05-13 | 天通瑞宏科技有限公司 | Reduction method, product and application of piezoelectric substrate for surface acoustic wave filter |
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Inventor after: Shen Hao Inventor after: Gu Xiaowei Inventor after: Xu Qiufeng Inventor after: Gui Huanhuan Inventor after: Ding Sunjie Inventor before: Shen Hao Inventor before: Gu Xiaowei Inventor before: Fan Yong |
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Application publication date: 20180522 |