CN108060436B - A method of nano-wire array is prepared using low-melting-point metal as bridging agent - Google Patents

A method of nano-wire array is prepared using low-melting-point metal as bridging agent Download PDF

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CN108060436B
CN108060436B CN201711285677.4A CN201711285677A CN108060436B CN 108060436 B CN108060436 B CN 108060436B CN 201711285677 A CN201711285677 A CN 201711285677A CN 108060436 B CN108060436 B CN 108060436B
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pct
substrate
low
melting
sample
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CN108060436A (en
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邹强
王泽亮
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Tianjin University
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/006Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/20Separation of the formed objects from the electrodes with no destruction of said electrodes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/12Electroplating: Baths therefor from solutions of nickel or cobalt

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention relates to a kind of methods that nano-wire array is prepared using low-melting-point metal as bridging agent, comprising the following steps: cleans to PCT and Cu substrate;Appropriate low-melting alloy powder is placed on Cu substrate, then it is heated in high-temperature cabinet, when temperature reaches, kept for a period of time to guarantee that low-melting-point metal all melts, it is then shut off and directly opens high-temperature cabinet, PCT is placed on the low-melting-point metal of fusing, guarantee molten metal as far as possible is uniformly contacted with PCT, then in another Cu plate of PCT upper press cover, high-temperature cabinet is then reopened;It is then shut off high-temperature cabinet, is taken out after sample is cooling, the Cu plate of top gland is removed, obtain the sample of PCT and Cu substrate phase adhesion;Electrolyte is added in electrolytic cell and carries out chemical deposition process;Sample is taken out, is heated in a water bath, so that the low-melting-point metal of substrate is melted and is fallen off together with the Cu substrate of bottom, realizes being kept completely separate for template and substrate.

Description

A method of nano-wire array is prepared using low-melting-point metal as bridging agent
Technical field
This patent be related to nano-wire array preparation field more particularly to it is a kind of using low-melting-point metal as bridging agent prepare The method of nano-wire array.
Background technique
Electrochemical deposition-template is to select have the porous as cathode of nano aperture, utilizes the substance in electrolyte Enter material directionally in nano pore in the electrochemical reducting reaction of cathode, the hole wall of template will limit synthesized material Shape and size, to obtain nano material.
The step of being typically prepared nano-wire array are as follows: first pass through etching and obtain the template with nano-pore;Then in template One side sputtering layer of metal film be used as cathode, anode is using inert electrode;Electrochemical deposition process is carried out, pattern hole is deposited It is full and it is long portal outer, when nano wire is covered to the upper surface of template, stopping electrochemical deposition process, (this process passes through observation Current density in reaction process is judged: when material deposits in hole, electric current is almost unchanged;When growing cap, make face Product becomes larger, so that electric current becomes larger;When material is when template upper surface increases, electric current increase is slack-off, when material covers with whole surface When, electric current tends to definite value.);Template is finally dissolved, to obtain nano-wire array.The nanometer material obtained by the above process The phenomenon that material, the conductive metallic material as cathode is often difficult to remove, usually there will be adhesion electrode metal at one end, obtains Nano-wire array it is not pure enough.
Summary of the invention
In order to overcome the deficiencies of the prior art, the present invention provides one kind prepares nano wire using low-melting-point metal as bridging agent The method of array, the preparation method are on the basis of Conventional electrochemical deposition-template, to the connection type of electrode and template On be adjusted, using low-melting-point metal as bridging agent, can simply realize electrode and the adhesion of template with separate, thus More simple it can must obtain purer nano-wire array.
A method of nano-wire array is prepared using low-melting-point metal as bridging agent, which is characterized in that including following step It is rapid:
(1) PCT and Cu substrate is cleaned, removes surface irregularities, is subsequently placed in high temperature drying case and is dried;
(2) the appropriate low-melting alloy powder lower than 80 DEG C is placed on the Cu substrate of step (1) acquisition, then in high temperature It is heated in case, when temperature reaches, holding a period of time to guarantee that low-melting-point metal all melts, is then shut off and direct High-temperature cabinet is opened, PCT is placed on the low-melting-point metal of fusing, guarantee molten metal as far as possible is uniformly contacted with PCT, then In another Cu plate of PCT upper press cover, then reopen high-temperature cabinet, temperature be set as again before numerical value, keep a timing Between;It is then shut off high-temperature cabinet, is taken out after sample is cooling, the Cu plate of top gland is removed, obtain the phase adhesion of PCT and Cu substrate Sample;
(3) electrolyte is added in electrolytic cell;Using Pt electrode as positive and negative anodes, positive and negative anodes are fixed, are in the two The sample that step (2) obtain is connected by face position with cathode, then by electrolytic cell as shaking in ultrasonic washing instrument It swings, the air in PCT hole is discharged, and solution is allowed sufficiently to soak PCT, electrolytic cell is transferred to thermostatted water after ultrasonic treatment It bathes in magnetic stirring apparatus, carries out chemical deposition process;
(4) when nano wire covers with whole surface, stop electrochemical deposition process, take out sample, heat, make in a water bath The low-melting-point metal of substrate is melted and is fallen off together with the Cu substrate of bottom, realizes being kept completely separate for template and substrate;
(5) sample that step (4) obtain is placed in methylene chloride, in ultrasonic washing instrument, dissolves PCT template, then It is cleaned three times with deionized water, it is ensured that PCT is removed, and can be obtained nano material.
Compared with the conventional method compared with, the beneficial effects of the present invention are:
Use low-melting-point metal connection template and substrate as electrode, make electrochemical deposition process, convenient for template and The separation of electrode, by the temperature-fall period that suitably heats up, separation process may make template and low melting point gold using heating water bath It is more thorough to belong to separation, relatively pure nano material can be obtained.
Detailed description of the invention:
Fig. 1 is placement position figure of the sample before heating;
Fig. 2 be obtain use low-melting-point metal as the sample schematic diagram of bridging agent;
Fig. 3 is electrochemical deposition schematic diagram;
Fig. 4 is that low-melting-point metal and substrate remove schematic diagram.
Figure label explanation: I Cu plate;Ⅱ PCT;III low-melting-point metal;IV metal Co ion;1 metal Co nano wire;2 Template;3 low-melting-point metals;4Cu substrate;5 beakers;6 water-baths.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation Example.
Embodiment:
Ethanol solution and dilute H are used in ultrasonic cleaning instrument2SO4Solution respectively carries out polycarbonate template PCT and Cu substrate Clean 10min, then clean 3min in ultrasonic washing instrument using deionized water, be placed in high temperature drying case after completing into Row drying, temperature are set as 100 DEG C, drying time 5min;By CoSO4·7H2O、H3BO4400mL is configured to deionized water The electrolyte of pH=3;Appropriate low-melting alloy, that is, martial virtue alloy (70 DEG C of fusing point) is placed on the Cu plate after cleaning, is then put It on zirconium plate, is heated in high-temperature cabinet, temperature is set as 75 DEG C, and when temperature reaches, holding 5 minutes to guarantee low melting point Metal all melts, and is then shut off and directly opens high-temperature cabinet, PCT is placed on the low-melting-point metal of fusing with tweezers, so High-temperature cabinet is then reopened, temperature is set as 75 again in another copper sheet of PCT upper press cover afterwards to apply pressure appropriate DEG C, the retention time is 5 minutes.It is then shut off high-temperature cabinet, is taken out after sample is cooling.Electrolytic cell is added in prepared electrolyte In;Using Pt electrode as positive and negative anodes, positive and negative anodes are fixed, make the two in face position, the sample for then obtaining previous step Product are connected with cathode.By electrolytic cell as vibrating 5min in supersonic wave cleaning machine.Electrolytic cell is transferred to constant temperature after ultrasonic treatment In water-bath magnetic stirring apparatus, water-bath maintains 26 DEG C (room temperatures), and voltage is set as 1.0V;To Co nanowire growth to top layer, stop Only electrochemical deposition process takes out sample, heats in a water bath, and bath temperature is set as 75 DEG C, and sample inclination is placed, to melt Low-melting-point metal after change is fallen, it is made to fall off together with the Cu substrate of bottom, realizes being kept completely separate for template and substrate;By upper one The sample that step obtains is placed in methylene chloride, and 30min is vibrated in ultrasonic washing instrument, dissolves PCT template, then use deionized water Cleaning is three times.It can be obtained pure Co nano wire.

Claims (1)

1. a kind of method for preparing nano-wire array using low-melting alloy as bridging agent, which comprises the following steps:
(1) polycarbonate template PCT and Cu substrate is cleaned, removes surface irregularities, and be dried;
(2) low-melting alloy powder of the appropriate fusing point lower than 80 DEG C is placed on the Cu substrate of step (1) acquisition, then in high temperature It is heated in case, when temperature reaches, holding a period of time to guarantee that low-melting alloy all melts, is then shut off and direct High-temperature cabinet is opened, PCT is placed on the low-melting alloy of fusing, guarantee molten metal as far as possible is uniformly contacted with PCT, then In another Cu plate of PCT upper press cover, then reopen high-temperature cabinet, temperature be set as again before numerical value, keep a timing Between;It is then shut off high-temperature cabinet, is taken out after sample is cooling, the Cu plate of top gland is removed, obtain the phase adhesion of PCT and Cu substrate Sample;
(3) electrolyte is added in electrolytic cell;Using Pt electrode as positive and negative anodes, positive and negative anodes are fixed, make the two in face The sample that step (2) obtain is connected with cathode, then electrolytic cell is placed in ultrasonic washing instrument and is vibrated, is made by position Air discharge in PCT hole, and solution is allowed sufficiently to soak PCT, electrolytic cell is transferred to water bath with thermostatic control magnetic after ultrasonic treatment In power blender, electrochemical deposition process is carried out;
(4) when nano wire covers with whole surface, stop electrochemical deposition process, take out sample, heat in a water bath, make substrate Low-melting alloy melt and fall off together with the Cu substrate of bottom, realize being kept completely separate for template and substrate;
(5) sample that step (4) obtain is placed in methylene chloride, in ultrasonic washing instrument, dissolves PCT template, then spend Ionized water cleans three times, it is ensured that PCT is removed, and can be obtained nano material.
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CN109192918A (en) * 2018-07-27 2019-01-11 苏州市模度智能科技有限公司 A kind of the single battery temperature device for fusing and its blowout method of power battery module

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CN1332272A (en) * 2001-07-09 2002-01-23 杭州五源材料发展有限公司 Manufacture of nanometer material reinforced electroformed crystalline metal product
CN103303861A (en) * 2013-05-14 2013-09-18 中国科学院上海硅酸盐研究所 Three-dimensional ordered precious metal nanotube array electrode and preparation method thereof
CN107099822A (en) * 2017-05-12 2017-08-29 信阳师范学院 Bipolar metal nanometer line and preparation method thereof
CN107265439A (en) * 2017-05-11 2017-10-20 江西理工大学 A kind of method of the lossless separation of carbon nano-tube macroscopic film

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DE102012021222B4 (en) * 2012-10-27 2015-02-05 Forschungszentrum Jülich GmbH Process for producing a nanoporous layer on a substrate

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Publication number Priority date Publication date Assignee Title
CN1332272A (en) * 2001-07-09 2002-01-23 杭州五源材料发展有限公司 Manufacture of nanometer material reinforced electroformed crystalline metal product
CN103303861A (en) * 2013-05-14 2013-09-18 中国科学院上海硅酸盐研究所 Three-dimensional ordered precious metal nanotube array electrode and preparation method thereof
CN107265439A (en) * 2017-05-11 2017-10-20 江西理工大学 A kind of method of the lossless separation of carbon nano-tube macroscopic film
CN107099822A (en) * 2017-05-12 2017-08-29 信阳师范学院 Bipolar metal nanometer line and preparation method thereof

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