CN108054277A - BaTiO3The preparation method of base superelevation on-off ratio resistive device - Google Patents
BaTiO3The preparation method of base superelevation on-off ratio resistive device Download PDFInfo
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- CN108054277A CN108054277A CN201711424053.6A CN201711424053A CN108054277A CN 108054277 A CN108054277 A CN 108054277A CN 201711424053 A CN201711424053 A CN 201711424053A CN 108054277 A CN108054277 A CN 108054277A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Abstract
The invention discloses a kind of BaTiO3The preparation method of base superelevation on-off ratio resistive device, its step are as follows：（1）Take Ba (CH3COO)2Powder, which is dissolved in glacial acetic acid and ethylene glycol monomethyl ether mixed solution, to be stirred, and obtains solution A；（2）Choose Ti (OC4H9)4Solution is dissolved in the mixed solution of ethyl alcohol and lactic acid, and stirring obtains solution B；（3）PVP powder is dissolved in the mixed solution of A and B, 85 ± 5 °C of stirring in water bath obtain solution C；（4）BaTiO is spun on clean quartz plate3Fiber, and made annealing treatment under 1100 ± 50 °C.Preparation process of the present invention is simple, one-step synthesis, and required raw material are cheap, and synthetic quantity is big；The resistive device of preparation has flexible volume, has the resistance switch ratio of very superelevation, possesses good resistive stability under the regulation and control of voltage.
Description
Technical field
The invention belongs to field of functional materials, more particularly to a kind of BaTiO3The preparation side of base superelevation on-off ratio resistive device
Method.
Background technology
With the development of information technology.Traditional Flash storages face the problems such as service speed is slow, loss is high, short life,
It much can not meet actual needs.However traditional diaphragm type BaTiO3Resistive memory resistance switch is than relatively low and system
Standby process is cumbersome, products therefrom is small, expensive, very flexible, therefore also limits its application in industrial circle.
BaTiO3It is important resistive material, prepares BaTiO3Fiber is expected to improve present situation and realize under regulating and controlling voltage
Resistive switch response.
The content of the invention
The purpose of the present invention, which is that, overcomes drawbacks described above, provides a kind of BaTiO with superelevation on-off ratio3Micrometer fibers
Preparation method.
The technical scheme is that：
A kind of BaTiO3The preparation method of base superelevation on-off ratio resistive device, its step are as follows：
（1）Take Ba (CH3COO)2Powder, which is dissolved in glacial acetic acid and ethylene glycol monomethyl ether mixed solution, to be stirred, and obtains solution A；
（2）Choose Ti (OC4H9)4Solution is dissolved in the mixed solution of ethyl alcohol and lactic acid, and stirring obtains solution B；
（3）PVP powder is dissolved in the mixed solution of A and B, 85 ± 5 °C of stirring in water bath obtain solution C；
（4）BaTiO is spun on clean quartz plate3Fiber, and made annealing treatment under 1100 ± 50 °C.
The step（1）In, Ba (CH3COO)2Concentration in glacial acetic acid and ethylene glycol monomethyl ether mixed solution is
0.1275g/mL；The volume ratio of glacial acetic acid and ethylene glycol monomethyl ether is 1:1；Mixing time is 20 minutes.
The step（2）In, Ti (OC4H9)4Concentration in ethyl alcohol and lactic acid mixed solution is 0.336g/mL；Ethyl alcohol
Volume ratio with lactic acid is 10:1；Mixing time is 20 minutes.
The step（3）In, PVP and Ba (CH3COO)2Mass ratio be 5:51；Ba(CH3COO)2Powder and Ti
(OC4H9)4Mass ratio be 51:74；More than when 85 ± 5 °C of lower stirring in water bath 8 are small.
The step（4）In, 50 ~ 70min is made annealing treatment under 1100 ± 50 °C.
Compared with prior art, advantages of the present invention and effect are：
（1）Preparation process of the present invention is simple, one-step synthesis, and required raw material are cheap, and synthetic quantity is big.
（2）The resistive device has flexible volume, has the resistance switch ratio of very superelevation, in the regulation and control of voltage
Under possess good resistive stability.It can promote and applied to industrial circle.
The preparation process and embodiment effect of the present invention will be further in following description of the drawings and specific embodiment
It is illustrated.
Description of the drawings
Fig. 1 is BaTiO prepared by the present invention3The x-ray diffraction pattern of base superelevation on-off ratio resistive device.
Fig. 2 is BaTiO prepared by the present invention3The stereoscan photograph figure of base superelevation on-off ratio resistive device, wherein Fig. 2
(a) it is the scanning electron microscope (SEM) photograph before fiber annealing, Fig. 2 (b) is the scanning electron microscope (SEM) photograph after fiber annealing, and Fig. 2 (b) tests for fiber
The structure chart of performance.
Fig. 3 is the BaTiO prepared by the present invention3The I-V schematic diagrames of base superelevation on-off ratio resistive device.
Fig. 4 is the BaTiO prepared by the present invention3The test chart of the stability of base superelevation on-off ratio resistive device.
Specific embodiment
The present invention can prepare the BaTiO for forming micrometer fibers shape under conventional experiment condition3, using simple
Solgel is prepared with glass bar spin processes, and expensive instrument and equipment is not required, and raw material are common chemicals, add in PVP
A large amount of fibers are easily spun after spin finish aid on quartz plate, fiber has small flexible spy compared to traditional planar device
Point, and traditional planar device needs noble metal as hearth electrode, fiber prepared by this experiment is using common tungsten filament as connecing
Touched electrode has been greatly reduced cost.In order to obtain the resistance-variable storing device of high on-off ratio, traditional planar device needs pass through
Semiconductor and storage medium it is compound come regulate and control can band, change work function and further improve device performance.Prepared by this experiment
BaTiO3Fiber need to only be formed metal-semiconductor contact, can just be surveyed under the regulation and control of voltage by the use of the tungsten needle corroded as electrode
There must be the resistive device of superelevation on-off ratio.It did not reported through regulating and controlling voltage also to realize single micrometer fibers so far
Example with superelevation switch ratio, a kind of fiber with superelevation on-off ratio has been prepared in this experiment for the first time, compared to tradition
Planar device have it is very strong innovative, breakthrough.Fiber prepared by this experiment not only overcomes previous conventional planar device
The defects of, and the fiber is provided simultaneously with the on-off ratio of superelevation under the regulation and control of voltage, is conducive to the application in resistive field.
BaTiO3The preparation method of base superelevation on-off ratio resistive device, step are as follows：
（1）Quartz plate will be chosen, it is successively ultrasonic with acetone, absolute ethyl alcohol, deionized water, wherein, quartz plate 10mm*10mm,
Ultrasonic 10min；
（2）Take Ba (CH3COO)2Powder is dissolved in volume ratio for 1:It stirs, obtains in 1 glacial acetic acid and ethylene glycol monomethyl ether mixed solution
To solution A；
（3）Choose Ti (OC4H9)4Solution is dissolved in volume ratio for 1:In 1 ethyl alcohol and the mixed solution of lactic acid, stirring obtains solution
B；
（4）PVP powder is dissolved in the mixed solution of A and B, stirring in water bath obtains solution C；
（5）BaTiO is spun on quartz plate with glass bar3Micrometer fibers anneal fiber in tube furnace under 1100 ± 50 °C
Handle 50 ~ 70min.
Embodiment：
The quartz plate of 10mm*10mm is chosen, with acetone, absolute ethyl alcohol, deionized water successively ultrasound 10min；Choose Ba
(CH3COO)2Powder (5.1g) is dissolved in 20ml glacial acetic acid and the mixed solution of the ethylene glycol monomethyl ether of 20ml, after stirring half an hour,
Obtain solution A；And choose Ti (OC4H9)4Solution（7.4g）It is dissolved in the mixed solution of 20ml ethyl alcohol and 2ml lactic acid, stirring 20
Minute, obtain solution B；Then by PVP powder（0.5g）Be dissolved in the mixed solution of A and B, when 85 °C of stirring in water bath 8 are small after, obtain
Solution C.BaTiO is spun on quartz plate with glass bar afterwards3Micrometer fibers, finally 1100 °C of annealing in tube furnace by fiber
1 it is small when.
Such as Fig. 1, Fig. 2, Fig. 3, shown in Fig. 4, using D8 ADVANCE types XRD（Curadiation,,
German Bruker-AXS companies）The crystal phase structure of sample prepared by measure.Using Hitachi, Ltd（Japan）II types of S4800
FESEM (FESEM, s-4800 II, Hitachi) observes the pattern of prepared sample.Using U.S.'s Keithley instrument
The Keithley 6487 of company carries out the test of IV change resistance performances and stability test to prepared sample.
Result of the test shows：
All diffraction maximums as shown in Figure 1 from left to right correspond respectively to tetragonal crystal system BaTiO3's（100,（001））,
（111,（100））,（111）,（200,（002））,（210,（201）,（102））,（211,（112）,（202,（220）,（003,
（212）,（221））,（103,（301）,（310））,（113）,（311）Crystal face, it is illustrated that in illustration be BaTiO3Cell configuration
Figure, it is illustrated that XRD illustrates prepared sample BaTiO3For a pure tetragonal phase structure.
It was found from Fig. 2 (a), the BaTiO with superelevation on-off ratio prepared by example3Micrometer fibers have light before annealing
Sliding surface, the diameter of fiber is about at 8 μm or so, and Fig. 2 (b) is shape appearance figure of the fiber after annealed, it is known that fiber surface
Become coarse, the illustration in Fig. 2 (b) is the test structure figure of fiber.
Cyclical voltage is 0V-500V-0V-500V-0V.It will be seen that the BaTiO of synthesis from Fig. 33Micrometer fibers
Under the regulation and control of voltage, resistance is realized from high-impedance state and is switched to low resistive state, and resets to high-impedance state from low resistive state
Resistive switching behaviour.Resistance switch ratio (ON/OFF) reaches the order of magnitude 10 of superelevation7。
It will be seen that the BaTiO of synthesis from Fig. 43Micrometer fibers have good retention performance, 2000s's
Test medium or low resistance state can keep good stability with high configuration.
It understands according to the above results：The BaTiO with superelevation on-off ratio that we prepare3Micrometer fibers preparation procedure
Simply, of low cost, synthetic quantity is big, possesses the resistance switch ratio of superelevation under the regulation and control of voltage, therefore can promote and be applied to
Resistive device field.
Therefore, it can be seen that the present invention from above-mentioned experimental procedure, data and graphic analyses and be prepared for a kind of BaTiO for the first time3
Base superelevation on-off ratio resistive device, and preparation process is simple, of low cost, the opening with superelevation on-off ratio under regulating and controlling voltage
Characteristic is closed, suitable for the application in resistive device field.
Claims (9)
1.BaTiO3The preparation method of base superelevation on-off ratio resistive device, which is characterized in that its step are as follows：
（1）Take Ba (CH3COO)2Powder, which is dissolved in glacial acetic acid and ethylene glycol monomethyl ether mixed solution, to be stirred, and obtains solution A；
（2）Choose Ti (OC4H9)4Solution is dissolved in the mixed solution of ethyl alcohol and lactic acid, and stirring obtains solution B；
（3）PVP powder is dissolved in the mixed solution of A and B, 85 ± 5 °C of stirring in water bath obtain solution C；
（4）BaTiO is spun on clean quartz plate3Fiber, and made annealing treatment under 1100 ± 50 °C.
2. preparation method as described in claim 1, which is characterized in that step（1）In, Ba (CH3COO)2In glacial acetic acid and second two
Concentration in alcohol methyl ether mixed solution is 0.1275g/mL.
3. preparation method as described in claim 1, which is characterized in that step（1）In, the volume of glacial acetic acid and ethylene glycol monomethyl ether
Than for 1:1；Mixing time is 20 minutes or more.
4. preparation method as described in claim 1, which is characterized in that step（2）In, Ti (OC4H9)4It is mixed in ethyl alcohol and lactic acid
It is 0.336g/mL to close the concentration in solution.
5. preparation method as described in claim 1, which is characterized in that step（2）In, the volume ratio of ethyl alcohol and lactic acid is 10:
1；Mixing time is 20 minutes or more.
6. preparation method as described in claim 1, which is characterized in that step（3）In, PVP and Ba (CH3COO)2Mass ratio
For 5:51.
7. preparation method as described in claim 1, which is characterized in that step（3）In, Ba (CH3COO)2Powder and Ti
(OC4H9)4Mass ratio be 51:74.
8. preparation method as described in claim 1, which is characterized in that step（3）In, when 85 ± 5 °C of lower stirring in water bath 8 are small
More than.
9. preparation method as described in claim 1, which is characterized in that step（4）In, make annealing treatment 50 under 1100 ± 50 °C
~70min。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100277969A1 (en) * | 2008-10-31 | 2010-11-04 | Seagate Technology Llc. | Structures for resistive random access memory cells |
| CN203800041U (en) * | 2014-01-28 | 2014-08-27 | 天津师范大学 | Multi-source controlled resistive random access memory of multi-film structure |
| CN106992250A (en) * | 2017-04-11 | 2017-07-28 | 中国石油大学(华东) | A kind of Nonvolatile resistance variation memory cell with multilevel storage characteristic based on ferroelectricity hetero-junctions and preparation method thereof |
| CN107056280A (en) * | 2017-05-25 | 2017-08-18 | 扬州大学 | A kind of BaTiO with resistive characteristic3The preparation method of micrometer fibers |
-
2017
- 2017-12-25 CN CN201711424053.6A patent/CN108054277A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100277969A1 (en) * | 2008-10-31 | 2010-11-04 | Seagate Technology Llc. | Structures for resistive random access memory cells |
| CN203800041U (en) * | 2014-01-28 | 2014-08-27 | 天津师范大学 | Multi-source controlled resistive random access memory of multi-film structure |
| CN106992250A (en) * | 2017-04-11 | 2017-07-28 | 中国石油大学(华东) | A kind of Nonvolatile resistance variation memory cell with multilevel storage characteristic based on ferroelectricity hetero-junctions and preparation method thereof |
| CN107056280A (en) * | 2017-05-25 | 2017-08-18 | 扬州大学 | A kind of BaTiO with resistive characteristic3The preparation method of micrometer fibers |
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Application publication date: 20180518 |
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