CN108054226A - 一种低工艺成本的薄膜太阳能电池柔性金属箔衬底 - Google Patents
一种低工艺成本的薄膜太阳能电池柔性金属箔衬底 Download PDFInfo
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Abstract
本案涉及一种低工艺成本的薄膜太阳能电池柔性金属箔衬底,以氮化硅陶瓷作为刚性基底；在刚性基底上喷涂剥离层；在剥离层上通过真空溅射制备银合金金属箔衬底；在金属箔衬底上依次形成薄膜太阳能电池功能层系；将聚合物衬底从刚性基底上剥离；本发明所提供的薄膜太阳能电池柔性聚合物衬底，利用现有技术中的设备就能实现大规模生产，通过在衬底与刚性基底之间创造性地加入剥离层，使薄膜太阳能电池的金属箔衬底与刚性基底能够容易分离，该制备工艺操作简单，避免使用价格高昂的绕卷式镀膜方式，充分利用现有的成熟设备，提高了产品的性价比。
Description
技术领域
本发明属于太阳能电池领域，具体涉及一种低工艺成本的薄膜太阳能电池柔性金属箔衬底。
背景技术
从太阳能电池生产技术的成熟度来区分，太阳能电池可以分为：晶体硅太阳能电池和薄膜太阳能电池。晶体硅太阳能电池是建立在高质量的单晶硅材料和相关的一系列成熟的加工处理工艺基础上，由于其技术相对稳定成熟，光电转换效率高，目前占据着80％以上的太阳能电池市场，但是晶体硅太阳能电池的使用成本很高，光伏发电使用成本约为1.18元/度，远大于煤电的0.5元/度。与晶体硅太阳能电池相比，薄膜太阳能电池多采用非晶硅、多晶硅薄膜或者铟硒化镉等薄膜材料实现光电转换，材料用量少、价格便宜、生产自动化程度高，在原料和制造工艺中大大降低了成本，更重要的一点是，薄膜太阳能电池可以使用柔性衬底，大大扩展了太阳能电池的应用范围，为太阳能电池的发展提供了更广阔的空间。
但是，目前大规模制造柔性薄膜太阳能电池的工艺均采用绕卷式镀膜方式，生产设备造价昂贵、工艺复杂，导致成本较高，与晶体硅太阳能电池相比没有性价优势，制约了其产能和应用。同时，绕卷式镀膜方式完全放弃了已经成熟了的薄膜太阳能电池的刚性衬底技术和设备，会造成较大的浪费。
发明内容
针对现有技术中的不足之处，本发明通过刚性衬底制备和柔性衬底转移技术实现了对现有刚性衬底设备的利用，即在玻璃、石墨等刚性衬底上依次铺设柔性衬底和各光电转换层，然后将柔性衬底从刚性衬底上分离转移，即得到柔性薄膜太阳能电池，由实现了对现有设备的利用。
本发明提供了一种低工艺成本的薄膜太阳能电池柔性金属箔衬底，以氮化硅陶瓷作为刚性基底；在刚性基底上喷涂剥离层；在剥离层上通过真空溅射制备银合金金属箔衬底；在金属箔衬底上依次形成薄膜太阳能电池功能层系；将聚合物衬底从刚性基底上剥离；
其中，所述剥离层含有乙烯-醋酸乙烯共聚物、聚乙烯、油酸酰胺、硅胶、硝酸纤维素；所述银合金金属箔选自银镍合金、银铟合金、银铈合金、银钛合金和银镁合金中的一种。
优选的是，所述剥离层中各组分的重量份如下：
优选的是，所述银合金中银的质量分数在85-90％。
优选的是，所述剥离层的厚度在60-90μm。
优选的是，所述金属箔的厚度在小于1μm。
优选的是，所述将金属箔衬底从刚性基底上剥离后用50-55℃的乙醇擦除衬底上残留的剥离层。
优选的是，所述薄膜太阳能电池可以是硅基类、化合物类或者染料敏化薄膜太阳能电池。
对本发明及其有益效果的阐述：本发明所提供的柔性金属箔衬底用于薄膜太阳能电池，利用现有技术中的设备在特定刚性基底上制备了金属箔衬底以及电池功能层系，通过在衬底与刚性基底之间创造性地加入剥离层，使薄膜太阳能电池的金属箔衬底与刚性基底能够容易分离，得到了柔性薄膜太阳能电池的衬底透光性好、光电转化效率高、耐腐蚀性强，该制备工艺操作简单，避免使用价格高昂的绕卷式镀膜方式，充分利用现有的成熟设备，提高产品的性价比；本案中选用氮化硅陶瓷作为刚性基底，表面平整，而且氮化硅特定的原子及其排列顺序与所配制的剥离层的粘结效果好，能够通过剥离层有效固定金属箔衬底及陈设其上的各功能层系；剥离层主要由乙烯-醋酸乙烯共聚物、聚乙烯、油酸酰胺、硅胶和硝酸纤维素组合，五种组分之间协同作用能够有效粘合于刚性基底和柔性基底之间，同时在一定方向的外力作用下，容易和刚性基底分离，而且在热乙醇的作用下可以被溶解去除，得到高透性金属箔衬底；本发明中银合金作为柔性衬底的主要成分，通过控制合金中银的含量以及掺杂金属的种类，使之透光性好、耐腐蚀性强。
具体实施方式
下面结合实施例对本发明做进一步的详细说明，以令本领域技术人员参照说明书文字能够据以实施。
实施例1
本发明中所涉及的薄膜太阳能电池柔性金属箔衬底的制备过程如下(所有操作在真空下完成)：
(1)以氮化硅陶瓷作为刚性基底，在刚性基底上喷涂剥离层，剥离层由下述组分组成：乙烯-醋酸乙烯共聚物55重量份、聚乙烯18重量份、油酸酰胺12重量份、硅胶8重量份和硝酸纤维素18重量份，剥离层厚度在70μm左右；
(2)待剥离层干燥后，在剥离层上通过真空溅射制备银镍合金金属箔衬底，厚度在800nm左右；
(3)将金属箔衬底从刚性基底上撕离，并用55℃的乙醇擦除金属箔衬底上残留的剥离层，得到薄膜太阳能电池柔性金属箔衬底。
同时，可以在步骤(2)所得的金属箔衬底上依次铺设薄膜太阳能电池功能层系，将该薄膜太阳能电池从刚性基底上撕离，并用用40-45℃的乙醇擦除金属箔衬底上残留的剥离层，得到铜铟硒柔性薄膜太阳能电池。
实施例2
本发明中所涉及的薄膜太阳能电池柔性金属箔衬底的制备过程如下(所有操作在真空下完成)：
(1)以氮化硅陶瓷作为刚性基底，在刚性基底上喷涂剥离层，剥离层由下述组分组成：乙烯-醋酸乙烯共聚物50重量份、聚乙烯15重量份、油酸酰胺10重量份、硅胶6重量份和硝酸纤维素16重量份，剥离层厚度在70μm左右；
(2)待剥离层干燥后，在剥离层上通过真空溅射制备银铟合金金属箔衬底，厚度在800nm左右；
(3)将金属箔衬底从刚性基底上撕离，并用55℃的乙醇擦除金属箔衬底上残留的剥离层，得到薄膜太阳能电池柔性金属箔衬底。
同时，可以在步骤(2)所得的金属箔衬底上依次铺设薄膜太阳能电池功能层系，将该薄膜太阳能电池从刚性基底上撕离，并用用50-55℃的乙醇擦除金属箔衬底上残留的剥离层，得到铜铟硒柔性薄膜太阳能电池。
对比例1
将实施例1步骤(1)中的刚性基底替换为普通的玻璃基底，其余组成和制备与实施例1相同。
对比例2
将实施例1步骤(1)中的油酸酰胺用相同重量的乙烯-醋酸乙烯共聚物代替，其余组成和实施例1相同。
对比例3
将实施例1步骤(1)中的硝酸纤维素用相同重量的普通纤维素代替，其余组成和实施例1相同。
对比例4
将实施例1步骤(2)中的银铟合金金属箔用不锈钢代替，其余组成和实施例1相同。
对比例5
市售铜铟硒柔性薄膜太阳能电池及其柔性衬底。
分别测试实施例1-2和对比例1-5中各柔性衬底的透光率和由其制备的铜铟硒柔性薄膜太阳能电池的光电转化效率，每个柔性聚合物衬底和薄膜太阳能电池制作了三批，每批包括20-25个相同工艺制作的样品，每个样品均进行透光率和效率测试，去除其中异常数据后求平均值，分别记录于表1中。
通过表1中的数据能够清晰的看出，按照本发明所制备的柔性衬底的透光性极好，达到93％以上，而且铜铟硒柔性薄膜太阳能电池效率达到18％以上，就国内而言具有非常突出的优势；通过对比例1可以看出，尽管刚性基底最终会与薄膜太阳能电池分离，但是基底的选择对电池的性质依然具有重要的影响；通过对比例2-4分别对剥离层和金属箔衬底中的组分和金属合金进行了调整和改变，可以发现一旦改变其中任一组分，衬底的透光率都会下降，甚至由其制备的薄膜电池的转化效率也会降低，各组分在柔性衬底的制备过程中产生了协同作用，只有通过彼此的相互作用才能有效增强其透光率，尤其是剥离层，尽管最后会被出掉，但是它的组成依旧对产品质量具有重要作用；通过实施例1和对比例5的测试结果比较，可以发现，本发明所制备的柔性衬底及薄膜太阳能电池在衬底透光率和转化效率上较同类产品有很大提高。
表1
| 柔性衬底及薄膜电池 | 透光率(％) | 光电转化效率(％) |
| 实施例1 | 93.5 | 18.4 |
| 实施例2 | 93.1 | 18.0 |
| 对比例1 | 87.9 | 17.0 |
| 对比例2 | 86.3 | 16.6 |
| 对比例3 | 85.9 | 16.3 |
| 对比例4 | 81.7 | 15.8 |
| 对比例5 | 75.5 | 14.6 |
尽管本发明的实施方案已公开如上，但其并不仅仅限于说明书和实施方式中所列运用，它完全可以被适用于各种适合本发明的领域，对于熟悉本领域的人员而言，可容易地实现另外的修改，因此在不背离权利要求及等同范围所限定的一般概念下，本发明并不限于特定的细节。
Claims (7)
1.一种低工艺成本的薄膜太阳能电池柔性金属箔衬底,其特征在于，以氮化硅陶瓷作为刚性基底；在刚性基底上喷涂剥离层；在剥离层上通过真空溅射制备银合金金属箔衬底；在金属箔衬底上依次形成薄膜太阳能电池功能层系；将聚合物衬底从刚性基底上剥离；
其中，所述剥离层含有乙烯-醋酸乙烯共聚物、聚乙烯、油酸酰胺、硅胶、硝酸纤维素；所述银合金金属箔选自银镍合金、银铟合金、银铈合金、银钛合金和银镁合金中的一种。
2.根据权利要求1所述的金属箔衬底，其特征在于，所述剥离层中各组分的重量份如下：
3.根据权利要求1所述的金属箔衬底，其特征在于，所述银合金中银的质量分数在85-90％。
4.根据权利要求1所述的金属箔衬底，其特征在于，所述剥离层的厚度在60-90μm。
5.根据权利要求1所述的金属箔衬底，其特征在于，所述金属箔的厚度在小于1μm。
6.根据权利要求1所述的金属箔衬底，其特征在于，所述将金属箔衬底从刚性基底上剥离后用50-55℃的乙醇擦除衬底上残留的剥离层。
7.根据权利要求1所述的金属箔衬底，其特征在于，所述薄膜太阳能电池可以是硅基类、化合物类或者染料敏化薄膜太阳能电池。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665678A (zh) * | 2002-05-08 | 2005-09-07 | 目标技术有限公司 | 银合金薄膜反射器和透明导电体 |
| CN102148270A (zh) * | 2011-01-05 | 2011-08-10 | 福建钧石能源有限公司 | 柔性薄膜太阳能电池及其制造方法 |
| CN103400896A (zh) * | 2013-07-24 | 2013-11-20 | 中国科学院上海高等研究院 | 一种铜铟镓硒柔性薄膜太阳能电池及其制备方法 |
| CN103545239A (zh) * | 2013-09-17 | 2014-01-29 | 新磊半导体科技（苏州）有限公司 | 一种基于薄膜型的外延片剥离工艺 |
-
2017
- 2017-12-22 CN CN201711405908.0A patent/CN108054226A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665678A (zh) * | 2002-05-08 | 2005-09-07 | 目标技术有限公司 | 银合金薄膜反射器和透明导电体 |
| CN102148270A (zh) * | 2011-01-05 | 2011-08-10 | 福建钧石能源有限公司 | 柔性薄膜太阳能电池及其制造方法 |
| CN103400896A (zh) * | 2013-07-24 | 2013-11-20 | 中国科学院上海高等研究院 | 一种铜铟镓硒柔性薄膜太阳能电池及其制备方法 |
| CN103545239A (zh) * | 2013-09-17 | 2014-01-29 | 新磊半导体科技（苏州）有限公司 | 一种基于薄膜型的外延片剥离工艺 |
Non-Patent Citations (2)
| Title |
|---|
| 涂停 等: "硅橡胶的物理改性研究进展", 《专论·综述》 * |
| 章志燕: "EVA热熔胶的应用", 《设备材料》 * |
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