CN108054074A - A kind of pedestal and the semiconductor processing equipment including the pedestal - Google Patents

A kind of pedestal and the semiconductor processing equipment including the pedestal Download PDF

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Publication number
CN108054074A
CN108054074A CN201810026173.9A CN201810026173A CN108054074A CN 108054074 A CN108054074 A CN 108054074A CN 201810026173 A CN201810026173 A CN 201810026173A CN 108054074 A CN108054074 A CN 108054074A
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CN
China
Prior art keywords
heater
radio
separation layer
pedestal
gas passage
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CN201810026173.9A
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Chinese (zh)
Inventor
张超
耿波
罗建恒
陈鹏
邱国庆
史全宇
赵晋荣
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Application filed by Beijing North Microelectronics Co Ltd filed Critical Beijing North Microelectronics Co Ltd
Priority to CN201810026173.9A priority Critical patent/CN108054074A/en
Publication of CN108054074A publication Critical patent/CN108054074A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

The embodiment of the present invention provides a kind of pedestal and the semiconductor processing equipment including the pedestal.The pedestal is for carrying workpiece to be machined, and including the heater, separation layer and radio-frequency electrode being cascading, the separation layer is insulating materials, by both the heater and the radio-frequency electrode potential isolation.Heater and radio-frequency electrode potential isolation, reduce the use of wave filter in the pedestal of the embodiment of the present invention.

Description

A kind of pedestal and the semiconductor processing equipment including the pedestal
Technical field
The embodiment of the present invention is related to a kind of pedestal and the semiconductor processing equipment including the pedestal.
Background technology
, it is necessary to use radio frequency (RF) and direct current (DC) simultaneously in hard mask (Hardmask) technique in IC manufacturing The process environments of power supply and high temperature, so as to etch target and so that it is deposited on substrate.In 28nm techniques, generally make It can meet process requirements with low frequency (such as 13MHz) and low pressure RF.
Now with the development of IC manufacturing industry, 14/16nm techniques have also gradually gone on the stage of history, hard In mask field, film forming needs the density of bigger, therefore, it has to introduce very high frequency(VHF) (such as 60MHz) and hyperbar and higher Technological temperature meet process requirements, and need on pedestal plus radio-frequency power.With the complication of hardware, add perhaps More problems to be solved.
The content of the invention
A kind of pedestal and the semiconductor processing equipment including the pedestal are provided according to an embodiment of the invention, in pedestal Heater and radio-frequency electrode potential isolation, so as to which heater is from the influence of radio-frequency power supply.In addition, heater and being connected thereto Circuit can be grounded, reduce the use of wave filter in system.
A kind of pedestal is provided according to one embodiment of present invention, for carrying workpiece to be machined, wherein, the pedestal bag Include the heater being cascading, separation layer and radio-frequency electrode, the separation layer is insulating materials, by the heater and Both radio-frequency electrode potential isolations.
In some instances, the heater is configured as being grounded.
In some instances, first gas passage, first gas are provided between the heater and the separation layer Body passage is connected with supply air line, and the supply air line is used to be passed through inert gas to the first gas passage;The isolation Second gas passage is provided between layer and the radio-frequency electrode, is equipped in the separation layer by the first gas passage and institute State the interface channel of second gas passage connection.
In some instances, it is evenly arranged on the heater face opposite with the separation layer in concentric circles distribution A plurality of first annular groove and the first radial groove that a plurality of first annular groove is interconnected;First ring Connected in star and first radial groove form the first gas passage.
In some instances, it is evenly arranged on the radio-frequency electrode face opposite with the separation layer and is distributed in concentric circles A plurality of second annular groove and the second radial groove that a plurality of second annular groove is interconnected;Described second Annular groove and second radial groove form the second gas passage.
In some instances, the contact surface palette between the heater, the separation layer and the radio-frequency electrode, For by the inert gas seal in the first gas passage and the second gas passage.
In some instances, third gas passage, the third gas passage and air supply pipe are provided in the heater Road connects, and the supply air line is used to be passed through inert gas to the third gas passage;Is provided in the radio-frequency electrode Four gas passages are equipped with interface channel in the separation layer, and the third gas passage and the 4th gas passage pass through institute Interface channel is stated to be connected.
In some instances, between the heater and the separation layer and the separation layer and the radio-frequency electrode it Between pass through sintering or plating mode connect.
A kind of semiconductor processing equipment is provided according to another embodiment of the invention, including chamber and radio frequency source, wherein, Pedestal described in any one of the above embodiments is provided in the cavity, and the radio frequency source is for the radio frequency electrical into the pedestal Pole provides radio-frequency power.
In some instances, the chamber is physical vapor deposition chamber.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will simply it be situated between to the attached drawing of embodiment below It continues, it should be apparent that, the accompanying drawings in the following description merely relates to some embodiments of the present invention rather than limitation of the present invention.
Fig. 1 is a kind of structure diagram of pedestal according to embodiments of the present invention;
Fig. 2 is the structure diagram that the back of the body blows passage in pedestal according to embodiments of the present invention;
Fig. 3 is a kind of structure diagram of semiconductor processing equipment including pedestal according to embodiments of the present invention.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair Bright part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill Personnel's all other embodiments obtained on the premise of without creative work, belong to the scope of protection of the invention.
Unless otherwise defined, the technical term or scientific terminology that the present invention uses should be tool in fields of the present invention The ordinary meaning that the personage for having general technical ability is understood." first ", " second " and the similar word used in the present invention is simultaneously It does not indicate that any order, quantity or importance, and is used only to distinguish different components." comprising " or "comprising" etc. Either object covers the element or object for appearing in the word presented hereinafter to the element that similar word means to occur before the word And its it is equivalent, and it is not excluded for other elements or object.
In a kind of processing equipment including heating pedestal, the lower electrode of heater and processing equipment is structure as a whole.It should DC power can only be applied in processing chamber in processing equipment, there is no the isolating problem of radio frequency, overall structure is fairly simple.So And have the demand introduced for radio-frequency power in present many processing technologys, if introducing radio frequency work(in the processing equipment Rate, then since heater does not have bonding shell, can cause can starter below heater.
In the processing equipment that another includes heating pedestal, heating pedestal is integrated with radio frequency introducing member, so as to To apply radio-frequency power.In addition, the introducing of cooperation radio-frequency power, is also added into separation layer and shielded layer on pedestal, to meet Add the requirement of radio-frequency power in technique.For example, the base part of the processing equipment includes heater body (it is suspension).Separately Outside, radio frequency lead-in, thermocouple, heater strip are all connected in heater body.Therefore, heater body end just becomes radio frequency End, is structure as a whole with radio-frequency electrode.Radio frequency starter below chamber in order to prevent, it is also necessary to be set below heater body Earth shield, and isolation ceramics are set between heater body and earth shield, to isolate radio-frequency head (heater body) and ground (earth shield) prevents the build-up of luminance below chamber.In addition, in order to seal vacuum, also in heater body with isolating between ceramics And O-ring is set between isolation ceramics and earth shield, prevent leakage in heater.Further, since O-ring is generally using elasticity Material is made, and neighbouring O-ring is burnt when heter temperature is excessively high in order to prevent, it is also necessary to set O-ring cold near O-ring But water route.
Above-mentioned to add the heating pedestal of radio frequency for a sandwich structure, radio-frequency electrode and heater (integral structure) is most Upper strata.Because radio-frequency electrode, thermocouple, heater strip are all metal, therefore radio-frequency power can be disturbed by thermocouple and heater strip Power supply and test equipment, therefore to add in wave filter.That is, the heater strip of heater, thermocouple, cooling water in pedestal Road, radio frequency lead-in are all a current potentials, to prevent radio frequency interference, therefore all to add in wave filter at heater strip, thermocouple end, The invisible size and cost for adding pedestal integrated box.Therefore, lower electrode (radio-frequency electrode) load in said base is complicated, adds It is unfavorable for process control after bias (Bias).In addition, the sandwich structure in said base has two layers of sealing ring (O-ring), There is interior danger of leaking out in installation, and one of O-ring is close to heater, there is the danger being burned out.
The embodiment of the present invention provides a kind of pedestal and the semiconductor processing equipment including the pedestal.It is real according to the present invention The pedestal of example is applied for carrying workpiece to be machined, including the heater, separation layer and radio-frequency electrode being cascading, it is described every Absciss layer is insulating materials, by both the heater and the radio-frequency electrode potential isolation.Due to radio-frequency electrode and heater Potential isolation, therefore, heater can cause heater and line-to-ground connected to it from the influence of radio-frequency power supply, So as to avoid addition wave filter.
Technical scheme is described further and illustrated below according to some embodiments of the present invention.
Embodiment one
Fig. 1 is the schematic diagram according to the heating pedestal of one embodiment of the invention.As shown in Figure 1, the base body of the pedestal Including radio-frequency electrode 301, separation layer 302 and the heater 303 that vertical direction is cascading from the top down along figure.Radio frequency Electrode 301 is for applying the electrode of radio-frequency power.Here electrode 301 is known as radio-frequency electrode and refers to that it can be applied in radio frequency Power, but it is not meant to that it cannot apply other kinds of power supply or power.Separation layer 302 is insulating materials, will be heated Device 303 and radio-frequency electrode 301 are isolated.
In some instances, which further includes from heater 303 away from the one side of separation layer 302 and stretches into pedestal sheet The introducing circuit of the inside of body.For example, introduce circuit can be radio frequency lead-in shown in Fig. 1, back of the body blowing service, Any one of thermocouple is several, and various circuits will be further described in more detail below.For example, introducing circuit includes Radio frequency lead-in 306, radio frequency lead-in 306 are electrically connected through heater 303 and separation layer 302 and with radio-frequency electrode 301, with for Radio-frequency electrode 301 provides radio-frequency power supply.Radio frequency lead-in 306 includes the rf signal line 310 of transmitting radio frequency signal, heater 303 with radio frequency lead-in 306 in 310 potential isolation of rf signal line.
In the present specification, will be referred to as introducing circuit through the electrode wires of heater 303 or pipeline.Used here as " introducing circuit " is these connection relations and sealing means for introducing between circuits and heater for convenience of explanation.For example, such as Fruit needs to introduce radio-frequency power, then needs to stretch into inside base body and pass through from heater 303 away from the one side of separation layer 302 Wear the radio frequency lead-in of heater 303 and separation layer 302.In addition, in order to carry out temperature survey to pedestal or other component, then also It can include the thermocouple of measurement temperature.In order between auxiliary heater 303 and separation layer 302 and separation layer 302 and electrode The back of the body between layer 301 needed for heat transfer blows the back of the body blowing of passage offer, then can add the back of the body blowing through heater 303 Supply air line.Certainly, introducing circuit can also be including the All other routes in addition to above-mentioned circuit.
In some instances, introduce by welded seal or close by metal seal between circuit and heater 303 Envelope.Therefore, heater can seal as a whole with introducing circuit, reduce the risk of interior leakage in pedestal, and simplify sealing knot Structure.If for example, being sealed by metal seal, metal seal can include copper band or metal-O-ring etc..It is right In carrying out welded seal, for example, can be welded at the lower surface of heater in the introducing circuit position adjacent with heater It connects.It is welded it is of course also possible to introduce the circuit position adjacent with heater at two surfaces up and down of heater.
What relative position relation and connection relation between above-mentioned introducing circuit and heater 303 were merely exemplary, The separation layer 302 being formed by insulating materials is by the basis of both heater 303 and radio-frequency electrode 301 potential isolations, lead-in Relative position relation and connection relation between road and heater 303 can also take other any suitable schemes.
It is close between potential isolation and various introducing circuits and heater for above-mentioned rf signal line and heater Envelope mode will be described in more detail for all parts below.
Heater
For example, heater 303 includes heater body 3031 and heater strip 3032.Heater body 3031 is, for example, metal Plate, for example, it can be made of the good metal of heat conductivility.For example, heater body 3031 is by systems such as metallic aluminium, stainless steels Into, but it is without being limited thereto according to an embodiment of the invention.For example, heater strip 3032 is arranged on heater body 3031 away from separation layer 302 one side.For example, the side surface of heater body 3031 can include the groove for accommodating heater strip, heater strip 3032 can be arranged in the groove of heater body 3031.However, being not restricted to this according to an embodiment of the invention, heat Silk 3032 can also be formed at the other positions of heater body 3032, for example, it can be arranged on heater body 3031 Inside.For example, heater strip 3032 is uniformly distributed in heater body 3031, so that heater 303 is in its plane The Temperature Distribution at each position on direction is more uniform, and the pending chip for being conducive to carry the pedestal carries out uniform Heating.The thickness of heater body 3031 is arbitrarily selected in the case where meeting its heat transfer property and mechanical performance, The shape and size of plane can also adjust according to actual needs and arbitrarily.For example, in order in entire radio-frequency electrode 301 The structure of side is heated, for example, on the direction of the heater body, the edge of heater body 3031 is at least It aligns with the edge of radio-frequency electrode 301 or extends beyond the edge of radio-frequency electrode 301 in a lateral direction.
Radio-frequency electrode
Radio-frequency electrode 301 carries out the electrode of supply voltage needed for treatment process to apply, as described above, it can be applied in Power supply include but not limited to radio-frequency power supply.For example, the electrode can be applied in DC power supply or radio-frequency power supply.Radio-frequency electrode 301 can be metal, for example, it may be aluminium, copper, gold, stainless steel etc., this is not particularly limited in the embodiment of the present invention.Separately Outside, the top of radio-frequency electrode 301 (namely away from the one side of separation layer 302), insulating layer is also provided with, for example, pottery Enamel coating or anodic oxide coating etc..In an embodiment according to the present invention, the radio-frequency electrode 301 is by being subsequently described in more detail Radio frequency lead-in realizes the input of radio-frequency power supply, so as to meet the needs of the technique of needs pedestal loading radio-frequency power supply.
Separation layer
Separation layer 302 is arranged between heater 303 and radio-frequency electrode 301, for by heater 303 and radio-frequency electrode 301 are physically and electrically isolated, and therefore, load radio-frequency power supply voltage or other supply voltages in radio-frequency electrode 301 It can not be applied on heater 303.Therefore, in an embodiment according to the present invention, radio-frequency electrode 301 and heater 303 can With potential isolation.For example, heater according to embodiments of the present invention can be configured as and connect when installing in processing Ground so as to which several other components or circuit that are connected with heater can also be grounded, installs additional so as to avoid on partial line road The wave filter for preventing radio-frequency power supply from disturbing.
In addition, the material of separation layer 302 is, for example, heat safe insulating materials.For example, separation layer 302 can be by ceramic shape Into the separation layer formed by ceramic material can cause point of the heat of heater generation on the in-plane of electrode layer 301 Cloth is more uniform, so as to ensure that the uniformity of the temperature parameter at the different position of chip during the working process.
In addition, the thickness of separation layer 302 be arranged so that between electrode layer 301 and heater 303 have safe insulation away from From.Therefore, the thickness of separation layer 302 can be calculated according to the actual conditions of equipment or technological parameter in the embodiment of the present invention And it selects.
The connection mode between lead-in road and heater or sealing means are further described below.Such as Fig. 1 institutes Show, the heater 303 in pedestal is in the lower section of entire base construction, as long as heater 303 can seal vacuum, then chamber is true Sky would not be revealed, and separation layer 302 is in Chamber vacuum environment, without the concern for separation layer 302 to the close of atmospheric environment Envelope.Therefore, between each layer in part of the heater more than 303 of pedestal, it is no longer necessary to which air is arranged with vacuum insulating in chamber It applies, so as to avoid further avoiding elastic O when heater 303 is in high temperature using O-ring near heater The risk that shape ring is burnt.
Radio frequency lead-in
As shown in Figure 1, coaxial line for example may be employed in radio frequency lead-in 306.For example, radio frequency lead-in 306 includes being located at The center conductor 310 at coaxial line center, the shielded layer 312 for wrapping up center conductor 310 and positioned at center conductor 310 and shielded layer Filler 311 between 312.Center conductor 310 can for example be made of metal with good conductivity, for example, gold, copper etc..In Heart conductor 310 is used as rf signal line, is used for transmission radio-frequency power supply signal, radio-frequency power supply power is applied to radio-frequency electrode 301.Shielded layer 312 can be made by metal layer, be used for shielded radio frequency power supply signal, to prevent radio-frequency power supply signal to it He generates interference by component.For example, shielded layer 312 can be configured as ground connection.Filler 311 is insulating materials, such as can be Polytetrafluoroethylene (PTFE) or ceramics.For example, filler 311 has good insulation performance, by center conductor 310 and shielded layer 312 is insulated from each other.The material composition of above-mentioned radio frequency lead-in each several part be it is illustrative, according to an embodiment of the invention can be with Other any suitable materials are chosen according to actual needs.In addition, for the size of coaxial line, it can be by required resistance to intensity of flow It is obtained with required impedance computation, so as to take different relevant parameters under different application environments.For example, for radio frequency Lead-in can control its characteristic impedance by the packing material and size of filler 311.
For example, radio frequency lead-in is stretched into away from the one side of separation layer 302 inside base body from heater 303, and pass through It wears heater 303 and separation layer 302 and is electrically connected with radio-frequency electrode 301.For example, center conductor 310 is electrically connected with radio-frequency electrode 301 It connects, so as to provide radio-frequency power supply signal for radio-frequency electrode 301.At the surface through heater, radio frequency lead-in 306 can be with The heater body 3031 of heater 303 is sealed.For example, the shielded layer 312 and heater body of radio frequency lead-in 306 3031 welded seals are sealed by metal seal.In this way, it not only ensure that close between radio frequency lead-in and heater Envelope can also apply identical current potential to shielded layer and heater, for example, can be to ground connection.
In addition, the radio frequency lead-in for using coaxial line, the end away from heater 303, which is also possible to be in, to be exposed to State in atmospheric environment.Therefore, can also be sealed in end of the radio frequency lead-in 306 away from base body.For example, radio frequency The end of the separate base body of lead-in 306 can be sealed by copper band 304.Further, since radio frequency lead-in 306 is remote From heater 303 farther out, sealing means are not limited to be sealed using copper band, can also for end from base body Using other sealing means, it is sealed for example, elastic seal ring may be employed.
Carry on the back blowing service
As shown in Figure 1, there is the separation layer 302 for isolating the two between radio-frequency electrode 301 and heater 303. In order to preferably be transmitted to the heat that heater 303 generates at radio-frequency electrode 301 and its top, according to the present invention one implements The pedestal of example further includes interface between separation layer 302 and heater 303 and separation layer 302 and radio-frequency electrode 301 Between the back of the body of interface blow passage 309.Include for example, the back of the body blows passage 309 between separation layer 302 and heater 303 First back of the body of interface blows passage and second back of the body between separation layer 302 and radio-frequency electrode 301 blows passage.In addition, may be used also Passage 309 is blown and through the interface channel 307 of separation layer 302 with the back of the body for including connecting above-mentioned two interface.When gas is being carried on the back When blowing flowing in passage and interface channel, can promote the heat that heater 303 generates heater 303 and separation layer 302 it Between and the transmission between separation layer 302 and electrode layer 301.Further, since between separation layer 302 and heater 303 The back of the body of interface between interface and separation layer 302 and radio-frequency electrode 301 blows connection of the passage by running through separation layer and leads to Road connects, and the heat that heater 303 generates can also be transported to radio frequency by heat by flowing through the back of the body blowing of heater surfaces The lower section of electrode 301, so as to improve the efficiency of heating surface.
First back of the body that Fig. 2 schematically shows at the section between heater 303 and separation layer 302 blows passage. As shown in Fig. 2, a plurality of first ring being distributed in concentric circles is evenly arranged on the face opposite with separation layer 302 of heater 303 Connected in star 3091 and the first radial groove 3092 that a plurality of first annular groove 3091 is interconnected;First annular groove 3091 and first radial groove 3092 form first gas passage 309 between heater 303 and separation layer 302.In Fig. 2 In, three first annular grooves and five the first radial grooves are only schematically shown, however, first annular groove and The quantity of one radial groove is without being limited thereto, but can arbitrarily be selected according to actual conditions.In addition, a plurality of first annular groove It radially can uniformly or non-uniformly be distributed, a plurality of first radial groove can also uniformly or non-uniformly divide along circumferential direction Cloth.
Similarly, can be evenly arranged on the face opposite with separation layer 302 of radio-frequency electrode 301 in the more of concentric circles distribution Second annular groove and the second radial groove that a plurality of second annular groove is interconnected;Second annular groove and Two radial grooves form second gas passage.The distribution form of above-mentioned a plurality of second annular groove and a plurality of second radial groove can With with reference to first annular groove shown in Fig. 2 and the first radial groove.In addition, the number of second annular groove and the second radial groove Amount and can be identical or different with first annular groove and the first radial groove along the distribution on in-plane.
In some instances, the inside of radio-frequency electrode and heater can also be located at by carrying on the back blowing passage.For example, heater Third gas passage is provided in 303, third gas passage is connected with supply air line, and supply air line is used for the third gas Passage is passed through inert gas;It is provided with the 4th gas passage in radio-frequency electrode 301, is equipped with interface channel in separation layer 302, the 3rd Gas passage and the 4th gas passage are connected by interface channel.The specific setting of third gas passage and the 4th gas passage Form is referred to the setting form of above-mentioned first back of the body blowing passage described in conjunction with Figure 2.For example, third gas passage It can include circular passage and the radial passage for connecting circular passage respectively with the 4th gas passage, but it is according to the present invention Embodiment is without being limited thereto.In addition, blow passage for the back of the body in pedestal, it can select that first back of the body blows passage and second back of the body blows passage Combination and the 3rd back of the body blow passage and the 4th back of the body blows one of combination of passage, can also be completely provided with the two combinations.
As described above, back of the body blowing needs are introduced from outside into, therefore, it is necessary to introduce the back of the body blowing supply pipe of back of the body blowing Road 313.As shown in Figure 1, back of the body blowing service 313 also stretches into pedestal from heater 303 away from the one side of separation layer 302 Body interior, and reach the interface between heater 303 and separation layer 302 through heater 303.Carry on the back blowing supply pipe The interface between interface and separation layer 302 and radio-frequency electrode 301 between road 313 and separation layer 302 and heater 303 The back of the body blow passage and be connected, being transported to the back of the body so as to will carry on the back blowing blows passage.It is similar with radio frequency lead-in, it blows passage in the back of the body and passes through At the position of heater 303, welding manner can be taken to be sealed or be sealed using metal seal.
The back of the body blowing blown for carrying out the back of the body, such as the inert gases such as helium may be employed, but according to an embodiment of the invention It is not restricted to this.Back of the body blowing enters chamber interior and influences treatment process in order to prevent, heater 303 and separation layer 302 Between and separation layer 302 and radio-frequency electrode 301 between carry out face sealing.For example, due between back of the body blowing and cavity environment The requirement of sealing be not very high, therefore, these interfaces for sealing of needs are simultaneously not required O-ring to be sealed, and therefore, keep away The risk that elastomeric O ring is burned out near heater is exempted from.As shown in Figure 1, for carrying on the back the sealing of blowing, it is necessary to heater 303 face in face of the surface of separation layer, two opposite surfaces of separation layer 302 and radio-frequency electrode 301 under separation layer 302 Surface carries out face sealing.For example, between heater 303 and separation layer 302 and between separation layer 302 and radio-frequency electrode 301 into The sealing of row face can realize sealing by the contact of smooth surface each other, that is to say, that heater 303, separation layer Contact surface palette between 302 and radio-frequency electrode 301, for by inert gas seal in first gas passage and the second gas In body passage.Therefore it may only be necessary to which surface between layers is smooth can to meet corresponding seal request, simplify component and answer It is miscellaneous to spend and reduce the risk that elastomeric O ring is burned out.It is however, without being limited thereto according to an embodiment of the invention.For example, at some In example, by being sintered or the side of plating between heater 303 and separation layer 302 and between separation layer 302 and radio-frequency electrode 301 Formula connects.
Thermocouple
In some instances, pedestal also has temperature measuring equipment.For example, pedestal according to an embodiment of the invention includes thermoelectricity Even 308.For example, thermocouple 308 can also stretch into heater 303 from heater 303 away from the one side of separation layer 302, and arrive Up to the position for needing measurement temperature.If above-mentioned radio frequency lead-in is similar with back of the body blowpipe road, at least one of heater is passed through at it At surface, between thermocouple 308 and heater 303 welded seal or metal seal can be taken to be sealed, here no longer It repeats.It should be noted that pedestal can include more thermocouples, different thermocouples can measure the temperature of different position, So as to which its measurement end can be arranged at different positions.For example, thermocouple includes shielded-plate tube and the electricity in shielded-plate tube Thermo wires, shielded-plate tube are sealed with the heater welded seal or by metal seal.
In the above-described embodiments, add using radio frequency lead-in, back of the body blowing feeding pipe and thermocouple as example to running through The circuit of hot device is described.However, this is not restricted to according to an embodiment of the invention.For example, in some embodiments, Pedestal can only include one or more of these circuits;For example, in some above-mentioned embodiments, heater 303 with every It is led using the back of the body blowing interface between interface and separation layer 302 and radio-frequency electrode 301 between absciss layer 302 Heat.However, in some embodiments, the heat conduction of above-mentioned two interface can not also use back of the body blowing to carry out heat conduction.For example, The interface between interface and separation layer 302 and radio-frequency electrode 301 between heater 303 and separation layer 302 can be with The modes such as sintering, plating is taken to conduct heat, improve heat transfer efficiency.In this case, it is not required that back of the body blowing pipe Road introduces back of the body blowing, and therefore, the circuit in these embodiments through heater can not include back of the body blowing pipeline.
And in other embodiments, pedestal can include other in addition to above-mentioned circuit through the heater Circuit.In the above-described embodiments, through heater circuit can welded seal or metallic sealing section sealing by way of with Heater connects, so as to which heater forms the entirety of a sealing in itself.When the pedestal is arranged on the chamber of Processing Equipment When interior, heater can be used for the vacuum insulating between atmospheric environment and cavity environment in itself, so as to avoid the heating of pedestal It is sealed between each layer in part on device using O-ring, avoids the elastomeric O ring near heater and be in heater The risk being burned out during high temperature.
Cooling water channel
Except it is above-mentioned through the circuit of heater in addition to, pedestal according to some embodiments of the invention can also include being used for The cooling water channel cooled down to heater 303.As shown in Figure 1, cooling water channel 305 is arranged on the lower section of heater 303.Example Such as, cooling water channel 305 can be arranged near the heater strip 3032 of heater, so as to preferably be cooled down to heater.Separately Outside, cooling water channel can also be connected to heater by welding, so that structure is than stronger.Furthermore, it is necessary to it says It is bright, although referred herein as " cooling water channel ", the cooling media to circulate wherein is not limited to water, can also adopt With any other suitable cooling media.In addition, cooling media is also not necessarily limited to be liquid, suitable gas can also be used to carry out Cooling.In addition, cooling water channel includes an inlet and an outlet, the two is connected respectively with for the pipeline of input/output cooling media, Form circulating cooling.In addition, during treatment process carries out, it can be by the implementation temperature value judgement that is obtained by thermocouple Whether temperature value exceeds default wafer temperature value.If real-time temperature values exceed default wafer temperature value, can increase The flow of cooling agent and/or the temperature for reducing cooling agent.
Bellows
In some embodiments in accordance with the present invention, pedestal is further included positioned at heater 303 away from 302 one side of separation layer Bellows 314.As shown in Figure 1, one end of bellows 314 is welded on heater 303.For above-mentioned introducing circuit, from Outside passes through at the hollow shaft of bellows 314 and reaches at heater 303 when introducing.Bellows 314 is by welding and adds Hot device 303 and formed sealing, when 314 free end as shown in Figure 1 of bellows is connected in Processing Equipment, bellows 314 hollow mandrel interior is connected with atmospheric environment, but the circuit due to being introduced from outside into and heater be by welded seal, because This, can keep the vacuum insulating between atmospheric environment and cavity environment, this will carry out more detailed in subsequent processing equipment Description.
In the description carried out above to embodiment, the physical connection structure between all parts is essentially described, so as to It can ensure sealing performance.
In addition to the sealing performance that above-mentioned physical connection generates improves, pedestal according to embodiments of the present invention is due to above-mentioned Connection structure, thermocouple, heating wire, heater body, cooling water channel on heater etc. can be connected with current potential, that is, be protected Hold identical current potential.Moreover, above-mentioned component can be grounded, so as to avoid wave filter is used.In addition, according to the present invention one In a little embodiments, bellows is made of conductive material, and one end of bellows is welded on heater, and the other end of bellows May be coupled to the chamber of Processing Equipment, in this way, due to chamber be ground connection, it is thus possible to so that heater and and its The other component of connection is also ground connection, simplifies the complexity of processing equipment.
In addition, for radio frequency lead-in, since its shielded layer is made for metal and is configured as being grounded, in radio frequency When lead-in passes through heater, its shielded layer can be welded on heater, in this way, ensure that sealing performance, and ensured Shielded layer and heater are earthing potentials.
Embodiment two
The present embodiment provides a kind of semiconductor processing equipment, for example, the processing equipment can be physical vapour deposition (PVD) (PVD) Equipment etc..The equipment includes chamber and radio frequency source, the pedestal being provided in chamber in above-described embodiment, and radio frequency source is used for pedestal In radio-frequency electrode provide radio-frequency power.
For example, chamber is physical vapour deposition (PVD) (PVD) chamber.
For example, pedestal is in a chamber, and the heater is connected to away from the one side of the separation layer by bellows On the bottom wall of the chamber.It is made for example, conductive material may be employed in bellows, on the bellows-welding to the heater Or it is sealed to by metal seal on the heater.
That is, the opposite end of one end welded with heater of bellows is connected on the bottom wall of chamber.Bellows The mode being connected on the bottom wall of chamber is not particularly limited.For example, as shown in figure 3, one end of bellows 314 is welded to flange On 316, then flange is connected to the bottom wall of chamber, these connections are, for example, to be tightly connected.That is, bellows is connected to It is sealed between one end of the bottom wall of chamber and the bottom wall of chamber.
For example, as shown in figure 3, introduce the hollow shaft that circuit and cooling water channel pass through bellows 314, and from chamber 315 Bottom wall in the outside of chamber 315 is reached in the region that is limited by bellows 314.For example, it is introduced into the radiofrequency signal in circuit Line 310 is connected with radio frequency source 400, so that radio frequency source can apply radio-frequency power to radio-frequency electrode.
Hollow space in the bellows under heater is connected with atmospheric environment.However, as described above, by It is tightly connected in heater circuit connected to it, therefore, heater has isolated atmospheric environment and cavity environment.Therefore, it is right In the embodiment of the present invention, heater is with introducing circuit as an entirety, the interior danger of leaking out when can reduce installation.From Fig. 3 It can be seen that part and atmosphere in bellows under heater, and the part outside chamber inner corrugated pipe then belongs to Cavity environment, for example, can be vacuum environment.
Further, since the heater of pedestal is welded to bellows, and bellows is connected to chamber, and the chamber for the treatment of process Usually it is grounded.Therefore, the current potential or earthing potential of heater.In addition, the other component being connected with heater, example Such as, thermocouple, cooling water channel, the shielded layer of radio frequency lead-in also can be earthing potential.Therefore, it is no longer necessary in order to prevent Radio frequency interference and additionally all add in wave filter in heater strip and thermocouple end, so as to reduce pedestal integrated box (Pedestal Integration Box, PIB) size and cost.
As shown in figure 3, it only schematically shows the part-structure of processing equipment, place according to embodiments of the present invention Reason process equipment can also include other parts.For example, at the roof of chamber, top electrode can also be included.Therefore, on pedestal Electrode layer can be referred to as lower electrode.Pedestal for the embodiment of the present invention or the Processing Equipment including the pedestal, Its lower electrode load is simple, therefore, easily technique can be regulated and controled after biasing.
In addition, for the processing equipment of the present embodiment, the various heating pedestals described in embodiment one can be used, are not had There is the corresponding portion that the part described in the present embodiment is referred in embodiment one.Equally, adding described in embodiment one Advantageous effects caused by hot radical seat can also obtain in the process equipment in embodiment two, therefore, no longer superfluous here It states.
The description of above example is not restricted, for the component not referred in above example or is set Mode is put, any suitable technical solution in this field can be taken.For example, the sealing for pedestal or processing equipment, is removed Outside the sealing submitted in above-described embodiment, if it is desired, can also be sealed at other positions.For example, cooling water channel If through bellows, can be sealed between cooling water channel and bellows, it, can also be for the shielded-plate tube of thermocouple Its one end away from base body is sealed.
The above be only the present invention exemplary embodiment, protection domain and is not intended to limit the present invention, this hair Bright protection domain is determined by appended claim.

Claims (10)

1. a kind of pedestal, for carrying workpiece to be machined, wherein, the pedestal includes the heater being cascading, isolation Layer and radio-frequency electrode, the separation layer is insulating materials, by both the heater and the radio-frequency electrode potential isolation.
2. pedestal according to claim 1, wherein, the heater is configured as being grounded.
3. pedestal according to claim 1, wherein, it is provided with first gas between the heater and the separation layer and leads to Road, the first gas passage are connected with supply air line, and the supply air line is used to be passed through inertia to the first gas passage Gas;It is provided with second gas passage between the separation layer and the radio-frequency electrode, is equipped in the separation layer by described the The interface channel that one gas passage is connected with the second gas passage.
4. pedestal according to claim 3, wherein, the heater is evenly arranged on the face opposite with the separation layer The a plurality of first annular groove being distributed in concentric circles and the first radial direction that a plurality of first annular groove is interconnected are recessed Slot;The first annular groove and first radial groove form the first gas passage.
5. pedestal according to claim 3, wherein, the radio-frequency electrode is uniformly arranged on the face opposite with the separation layer There are a plurality of second annular groove being distributed in concentric circles and the second radial direction that a plurality of second annular groove is interconnected Groove;The second annular groove and second radial groove form the second gas passage.
6. pedestal according to any one of claim 3 to 5, wherein, the heater, the separation layer and the radio frequency Contact surface palette between electrode, for by the inert gas seal in the first gas passage and second gas In body passage.
7. heating pedestal according to claim 1, wherein, it is provided with third gas passage in the heater, described Three gas passages are connected with supply air line, and the supply air line is used to be passed through inert gas to the third gas passage;It is described It is provided with the 4th gas passage in radio-frequency electrode, is equipped with interface channel in the separation layer, the third gas passage and described 4th gas passage is connected by the interface channel.
8. heating pedestal according to claim 1, wherein, between the heater and the separation layer and the isolation It is connected between layer and the radio-frequency electrode by sintering or plating mode.
9. a kind of semiconductor processing equipment, including chamber and radio frequency source, wherein, it is provided in the cavity according to claim 1-8 any one of them pedestals, the radio frequency source provide radio-frequency power for the radio-frequency electrode into the pedestal.
10. semiconductor processing equipment according to claim 9, wherein, the chamber is physical vapor deposition chamber.
CN201810026173.9A 2018-01-11 2018-01-11 A kind of pedestal and the semiconductor processing equipment including the pedestal Pending CN108054074A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109594062A (en) * 2018-12-14 2019-04-09 沈阳拓荆科技有限公司 The electric heating shower plate and its temperature control system imported with radio frequency
CN111599734A (en) * 2019-02-21 2020-08-28 北京北方华创微电子装备有限公司 Bearing device and semiconductor processing equipment

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284328A (en) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp Ceramic part
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
US6951587B1 (en) * 1999-12-01 2005-10-04 Tokyo Electron Limited Ceramic heater system and substrate processing apparatus having the same installed therein
CN103081088A (en) * 2010-08-06 2013-05-01 应用材料公司 Electrostatic chuck and methods of use thereof
CN104854693A (en) * 2012-12-21 2015-08-19 应用材料公司 Single-body electrostatic chuck
CN106158717A (en) * 2015-03-31 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 Mechanical chuck and semiconductor processing equipment
CN207818520U (en) * 2018-01-11 2018-09-04 北京北方华创微电子装备有限公司 A kind of pedestal and the semiconductor processing equipment including the pedestal

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951587B1 (en) * 1999-12-01 2005-10-04 Tokyo Electron Limited Ceramic heater system and substrate processing apparatus having the same installed therein
JP2001284328A (en) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp Ceramic part
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
CN103081088A (en) * 2010-08-06 2013-05-01 应用材料公司 Electrostatic chuck and methods of use thereof
CN104854693A (en) * 2012-12-21 2015-08-19 应用材料公司 Single-body electrostatic chuck
CN106158717A (en) * 2015-03-31 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 Mechanical chuck and semiconductor processing equipment
CN207818520U (en) * 2018-01-11 2018-09-04 北京北方华创微电子装备有限公司 A kind of pedestal and the semiconductor processing equipment including the pedestal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109594062A (en) * 2018-12-14 2019-04-09 沈阳拓荆科技有限公司 The electric heating shower plate and its temperature control system imported with radio frequency
CN109594062B (en) * 2018-12-14 2021-05-18 拓荆科技股份有限公司 Electrical heating spray plate with radio frequency introduction and temperature control system thereof
CN111599734A (en) * 2019-02-21 2020-08-28 北京北方华创微电子装备有限公司 Bearing device and semiconductor processing equipment
CN111599734B (en) * 2019-02-21 2024-04-16 北京北方华创微电子装备有限公司 Bearing device and semiconductor processing equipment

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