CN108051844B - 一种离子源束流均匀性测量装置 - Google Patents
一种离子源束流均匀性测量装置 Download PDFInfo
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- CN108051844B CN108051844B CN201711228571.0A CN201711228571A CN108051844B CN 108051844 B CN108051844 B CN 108051844B CN 201711228571 A CN201711228571 A CN 201711228571A CN 108051844 B CN108051844 B CN 108051844B
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- 238000005259 measurement Methods 0.000 title claims abstract description 45
- 150000002500 ions Chemical class 0.000 claims abstract description 88
- 239000000523 sample Substances 0.000 claims abstract description 80
- 150000001768 cations Chemical class 0.000 claims abstract description 7
- 230000005611 electricity Effects 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 description 33
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010893 paper waste Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
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CN201711228571.0A CN108051844B (zh) | 2017-11-29 | 2017-11-29 | 一种离子源束流均匀性测量装置 |
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CN201711228571.0A CN108051844B (zh) | 2017-11-29 | 2017-11-29 | 一种离子源束流均匀性测量装置 |
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CN108051844A CN108051844A (zh) | 2018-05-18 |
CN108051844B true CN108051844B (zh) | 2019-11-05 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040070776A (ko) * | 2003-02-04 | 2004-08-11 | 아남반도체 주식회사 | 이온주입장치의 패러데이 컵 |
CN103219217A (zh) * | 2013-03-25 | 2013-07-24 | 中国电子科技集团公司第四十八研究所 | 一种用于离子注入机靶室的法拉第系统及离子束束流品质检测的方法 |
CN103792566A (zh) * | 2013-07-18 | 2014-05-14 | 北京中科信电子装备有限公司 | 一种测量束流的法拉第装置 |
CN104538324A (zh) * | 2014-11-27 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机束水平方向注入角度测控装置及测控方法 |
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2017
- 2017-11-29 CN CN201711228571.0A patent/CN108051844B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040070776A (ko) * | 2003-02-04 | 2004-08-11 | 아남반도체 주식회사 | 이온주입장치의 패러데이 컵 |
CN103219217A (zh) * | 2013-03-25 | 2013-07-24 | 中国电子科技集团公司第四十八研究所 | 一种用于离子注入机靶室的法拉第系统及离子束束流品质检测的方法 |
CN103792566A (zh) * | 2013-07-18 | 2014-05-14 | 北京中科信电子装备有限公司 | 一种测量束流的法拉第装置 |
CN104538324A (zh) * | 2014-11-27 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机束水平方向注入角度测控装置及测控方法 |
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