CN108039409B - Preparation method of three-dimensional superconducting electrode material phase change memory - Google Patents
Preparation method of three-dimensional superconducting electrode material phase change memory Download PDFInfo
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- 230000015654 memory Effects 0.000 title claims abstract description 105
- 239000007772 electrode material Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000012782 phase change material Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010955 niobium Substances 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 5
- PFZWDJVEHNQTJI-UHFFFAOYSA-N antimony titanium Chemical compound [Ti].[Sb] PFZWDJVEHNQTJI-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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Abstract
The invention discloses a preparation method of a three-dimensional superconducting electrode material phase change memory, which adopts a superconducting material as an electrode material of a phase change memory unit, can reduce the operating current of the phase change memory unit at a critical temperature, realizes the multilayer superposition of the memory unit, and improves the integration density and the storage capacity of the phase change memory.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a preparation method of a three-dimensional superconducting electrode material phase change memory.
Background
With the development of the electronics industry, the demand for high performance memory devices has increased. The phase change memory technology is considered to be the most mature memory in the new generation of memories, and the phase change memory is a nonvolatile memory device, and has large storage capacity, stronger durability and high read-write speed. With the continuous progress of the integrated circuit technology node, the requirements of integration density and storage performance are higher and higher, and the phase change memory can also play a critical role in the field of low-temperature superconductivity.
Due to the technical bottleneck of phase change materials in the existing phase change memory technology, the number of layers of storage units stacked in the phase change memory in the three-dimensional structure is small, and the phase change memory technology based on the three-dimensional structure is difficult to apply. Therefore, it is necessary to develop a new scheme for increasing the number of memory cell layers of the phase change memory, realizing the phase change memory in a three-dimensional structure, and increasing the integration density and the storage capacity of the phase change memory.
Disclosure of Invention
In view of the above problems in the prior art, a method for manufacturing a phase change memory of a three-dimensional superconducting electrode material is provided.
The specific technical scheme is as follows:
a preparation method of a three-dimensional superconducting electrode material phase change memory comprises the following steps:
step S1: providing a monocrystalline silicon wafer with a plurality of prepared functional regions as a substrate, and alternately depositing a first insulating layer and an electrode material layer on the substrate to form a memory blank, wherein the topmost layer and the bottommost layer of the memory blank are both the first insulating layer, and the electrode material layer is formed by adopting a superconducting electrode material;
step S2: etching the first insulating layer from the topmost layer of the memory blank to the bottommost layer of the memory blank by adopting exposure etching so as to form a first groove in the memory blank;
step S3: depositing a phase change material layer and a heating electrode layer in sequence from the upper surface of the first groove to the upper surface of the memory blank, wherein the heating electrode layer and the electrode material layer are formed by the same superconducting electrode material;
step S4: depositing an insulating material on the upper surface of the memory blank body, filling the first groove to form a second insulating layer, and polishing the surface of the memory blank body;
step S5: etching the side edge of the memory blank for multiple times in sequence to form a plurality of connecting grooves which are communicated with the electrode material layers in sequence, wherein the connecting grooves are communicated to form a groove part;
step S6: depositing an insulating material in the groove part to form a third insulating layer, and then polishing the memory blank;
step S7: etching the other side of the memory blank body relative to the third insulating layer until the heating electrode layer is formed so as to form a first electrode groove, and depositing the superconducting electrode material in the first electrode groove;
step S8: etching each connecting groove until the electrode material layer corresponding to the connecting groove so as to form a plurality of second electrode grooves, and depositing the superconducting electrode material in each second electrode groove;
step S9: and polishing the surface of the memory blank to obtain the three-dimensional superconducting electrode material phase change memory.
Preferably, the superconducting electrode material is a niobium material.
Preferably, in the step S4, the step S6 and the step S9, the memory blank is polished by chemical mechanical polishing.
Preferably, a gate tube is further arranged on the substrate.
Preferably, the first insulating layer, the second insulating layer, and the third insulating layer are formed of silicon oxide and/or silicon nitride, respectively.
Preferably, in step S3, the phase change material layer is made of a germanium antimony tellurium material and a doped article thereof, or a titanium antimony tellurium material and a doped article thereof.
Preferably, in step S1, the thickness of the electrode material layer is smaller than the thickness of the first insulating layer.
Preferably, the three-dimensional superconducting electrode material phase change memory is prepared by the preparation method, and the three-dimensional superconducting electrode material phase change memory specifically includes:
the substrate is arranged at the bottom of the three-dimensional superconducting electrode material phase change memory;
a plurality of first insulating layers and a plurality of electrode material layers alternately stacked on the single-crystal silicon substrate, the topmost layer and the bottommost layer being the first insulating layers;
a first groove connected from the first insulating layer of the topmost layer to the first insulating layer of the bottommost layer;
the phase change material layer is arranged on the first groove and the upper surface of the first insulating layer at the bottommost layer;
the heating electrode layer is arranged on the upper surface of the phase change material layer;
a second insulating layer disposed on an upper surface of the heating electrode layer;
the third insulating layer is arranged on the side edge of the second insulating layer, and the bottom of the third insulating layer is respectively connected with each electrode material layer;
the first electrode is arranged on the other side edge, opposite to the third insulating layer, of the second insulating layer, and the bottom of the first electrode is connected with the heating electrode layer;
the plurality of second electrodes are arranged in the third insulating layer, and the bottom of each second electrode is correspondingly connected with one electrode material layer;
the electrode material layer, the heating electrode layer, the first electrode and the second electrode are all superconducting electrode materials.
Preferably, the superconducting electrode material is a niobium material, and the phase change material layer is a germanium antimony tellurium material and a doped material thereof or a titanium antimony tellurium material and a doped material thereof.
Preferably, the first insulating layer, the second insulating layer, and the third insulating layer are formed of silicon oxide and/or silicon nitride, respectively.
The technical scheme has the following advantages or beneficial effects:
the superconducting electrode material is used as the electrode material of the phase change memory, and the structure of the phase change memory formed by combining the technical scheme can reduce the operating current of the phase change memory unit at the critical temperature, realize the multilayer superposition of the memory unit and improve the integration density and the storage capacity of the phase change memory. Meanwhile, the preparation process is convenient and fast, the manufacturing process is easy to realize, and the wide application of the three-dimensional superconducting electrode material phase change memory is facilitated.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a flow chart illustrating a method for fabricating a phase change memory of a three-dimensional superconducting electrode material according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating an initial structure of a memory blank according to an embodiment of a method for fabricating a phase change memory using a three-dimensional superconducting electrode material according to the present invention;
FIG. 3 is a schematic structural diagram of a memory blank after etching a first groove in an embodiment of a method for manufacturing a three-dimensional superconducting electrode material phase change memory according to the present invention;
FIG. 4 is a schematic structural diagram of a memory blank with a heating electrode layer according to an embodiment of a method for manufacturing a phase change memory of a three-dimensional superconducting electrode material of the present invention;
FIG. 5 is a schematic structural diagram of a phase change memory made of a three-dimensional superconducting electrode material according to an embodiment of the present invention
FIG. 6 is a schematic structural diagram of a memory blank with a second insulating layer according to an embodiment of a method for fabricating a phase change memory of a three-dimensional superconducting electrode material of the present invention;
fig. 7 is a schematic structural diagram of a memory blank with a first electrode slot and a second electrode slot in an embodiment of a method for manufacturing a three-dimensional superconducting electrode material phase change memory according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In a preferred embodiment of the present invention, as shown in fig. 1, a method for manufacturing a phase change memory of a three-dimensional superconducting electrode material includes the following steps:
step S1: providing a monocrystalline silicon wafer with a plurality of prepared functional regions as a substrate 1, and alternately depositing a first insulating layer 2 and an electrode material layer 3 on the substrate 1 to form a memory blank, wherein the topmost layer and the bottommost layer of the memory blank are both the first insulating layer 2, and the electrode material layer 3 is formed by adopting a superconducting electrode material;
step S2: etching the first insulating layer 2 from the topmost layer of the memory blank to the bottommost layer of the memory blank by adopting exposure etching so as to form a first groove 4 in the memory blank;
step S3: depositing a phase change material layer 5 and a heating electrode layer 6 in sequence from the upper surface of the first groove 4 to the upper surface of the memory blank, wherein the heating electrode layer 6 and the electrode material layer 3 are formed by the same superconducting electrode material;
step S4: depositing an insulating material on the upper surface of the memory blank and filling the first groove 4 to form a second insulating layer 7, and then polishing the surface of the memory blank;
step S5: etching for multiple times on the side edge of the memory blank body in sequence to form a plurality of connecting grooves which are communicated with the electrode material layers 3 in sequence, wherein the connecting grooves are communicated to form a groove part;
step S6: depositing an insulating material in the groove part to form a third insulating layer 8, and then polishing the memory blank;
step S7: etching the other side of the memory blank body relative to the third insulating layer 8 until the electrode layer 6 is heated to form a first electrode groove 9, and depositing a superconducting electrode material in the first electrode groove 9;
step S8: etching each connecting groove until the electrode material layer 3 corresponding to the connecting groove to form a plurality of second electrode grooves 10, and depositing a superconducting electrode material in each second electrode groove 10;
step S9: and polishing the surface of the memory blank to obtain the three-dimensional superconducting electrode material phase change memory.
Specifically, in the present embodiment, according to fig. 2, in step S1, three, four or more layers of the first insulating layer 2 and the electrode material layer 3 may be alternately stacked on the substrate 1 in the production process; the thickness of the electrode material layer 3 is very thin, and the current can reach 30A to 100A under the superconducting condition.
As shown in fig. 3, in step S2, the structure of the first groove 4 is obtained by exposure etching, and a V-shaped structure may be adopted.
As shown in fig. 4, in step S3, the phase change material layer 5 may realize a superconducting phenomenon under a certain stress, and the thicknesses of the heating electrode layer 6 and the electrode material layer 3 at the upper and lower portions of the phase change material layer 5 are different to form stresses, so that the phase change material layer 5 can realize superconductivity. Further, for a multi-layer memory structure, the structure formed by the scheme can be well adapted to the stacking of multi-layer materials.
As shown in fig. 5, in step S4, since the thickness of the deposition is too large, it is necessary to make the surface of the memory blank flat by polishing.
As shown in fig. 6, in step S5, a plurality of connecting grooves each for preparing an electrode are connected in turn to the corresponding electrode material layer 3. Meanwhile, in the etching process, the channels among the storage units stacked in multiple layers are etched through in one step, so that the process cost is saved.
According to fig. 7, in step S6, a first electrode is provided on the heater electrode layer 6 by etching and deposition. In step S7, one second electrode is provided on each electrode material layer 3 by etching and deposition. By adopting the method, the electrodes can be arranged on the storage structure without stacking layers according to the actual process, so that the applicability of the method is improved.
The deposition method in the above steps adopts a physical vapor deposition method.
In the above steps, the electrode material layer 3, the heating electrode layer 6, the first electrode, and the second electrode are all made of superconducting electrode materials, so that electric energy can be transmitted without loss at a critical temperature, the operating current of the phase change memory cell can be reduced, and multilayer superposition of the memory cell can be realized. Meanwhile, the preparation process has the advantages of low operation temperature, low damage to the phase-change material and easy realization of the manufacturing process.
The functional area includes: a CMOS circuit region, a bipolar transistor circuit region, and a diode circuit region.
In a preferred embodiment of the present invention, the substrate 1 is further provided with a gate tube, which is a diode, a triode, a mosfet, etc. for selecting the corresponding phase change memory cell.
In a preferred embodiment of the present invention, the superconducting electrode material is a niobium material.
The niobium material can enable the phase change material to be better crystallized, the resistance value of the low resistance state is lower, and the high and low resistance values of the amorphous state and the crystalline state are effectively distributed. The niobium material and the phase change material layer 5 have a smaller contact area. By adding the ultrathin niobium superconducting electrode material heating electrode, the phase change memory can realize nanosecond-level read-write speed.
In a preferred embodiment of the present invention, the memory blank is polished by chemical mechanical polishing.
Specifically, the polishing process can planarize the surface of the memory blank, which is helpful for improving the etching accuracy in the subsequent process.
In a preferred embodiment of the present invention, the first insulating layer 2, the second insulating layer 7 and the third insulating layer 8 are formed of silicon dioxide and/or silicon nitride, respectively.
Specifically, silicon dioxide and/or silicon nitride can be used for achieving a good insulation and isolation effect.
In a preferred embodiment of the present invention, in step S3, the phase change material layer 5 is made of ge, sb, te or ti, sb, te or a combination thereof.
Specifically, in this embodiment, the ge-sb-te material can realize a superconducting phenomenon under a stress of 20Gpa, so that the phase change material layer 5 can more easily realize superconductivity.
In a preferred embodiment of the present invention, as shown in fig. 2, in step S1, the thickness of the electrode material layer 3 is smaller than that of the first insulating layer 2.
In a preferred embodiment of the present invention, as shown in fig. 2, a three-dimensional superconducting electrode material phase change memory is prepared by any one of the above preparation methods, and the three-dimensional superconducting electrode material phase change memory specifically includes:
the substrate 1 is arranged at the bottom of the three-dimensional superconducting electrode material phase change memory;
a plurality of first insulating layers 2 and a plurality of electrode material layers 3 alternately stacked on the single-crystal silicon substrate 1, the topmost and bottommost layers being the first insulating layers 2;
a first groove 4 connected from the first insulating layer 2 of the uppermost layer to the first insulating layer 2 of the lowermost layer; the phase change material layer 5 is arranged on the upper surfaces of the first groove 4 and the first insulating layer 2 at the bottommost layer;
a heating electrode layer 6 disposed on an upper surface of the phase change material layer 5;
a second insulating layer 7 provided on the upper surface of the heating electrode layer 6;
the third insulating layer 8 is arranged on the side edge of the second insulating layer 7, and the bottom of the third insulating layer 8 is respectively connected with each electrode material layer 3;
the first electrode is arranged on the other side edge of the second insulating layer 7 relative to the third insulating layer 8, and the bottom of the first electrode is connected with the heating electrode layer 6;
the plurality of second electrodes are arranged in the third insulating layer 8, and the bottom of each second electrode is correspondingly connected with one electrode material layer 3;
the electrode material layer 3, the heating electrode layer 6, the first electrode, and the second electrode are all superconducting electrode materials.
In a preferred embodiment of the present invention, the superconducting electrode material is a niobium material, and the phase change material layer 5 is a germanium antimony tellurium material and its doped material or a titanium antimony tellurium material and its doped material.
In a preferred embodiment of the present invention, the first insulating layer 2, the second insulating layer 7 and the third insulating layer 8 are formed of silicon dioxide and/or silicon nitride, respectively.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A preparation method of a three-dimensional superconducting electrode material phase change memory is characterized by comprising the following steps:
step S1: providing a monocrystalline silicon wafer with a plurality of prepared functional regions as a substrate, and alternately depositing a first insulating layer and an electrode material layer on the substrate to form a memory blank, wherein the topmost layer and the bottommost layer of the memory blank are both the first insulating layer, and the electrode material layer is formed by adopting a superconducting electrode material;
step S2: etching the first insulating layer from the topmost layer of the memory blank to the bottommost layer of the memory blank by adopting exposure etching so as to form a first groove in the memory blank;
step S3: depositing a phase change material layer and a heating electrode layer in sequence from the upper surface of the first groove to the upper surface of the memory blank, wherein the heating electrode layer and the electrode material layer are formed by the same superconducting electrode material;
step S4: depositing an insulating material on the upper surface of the memory blank body, filling the first groove to form a second insulating layer, and polishing the surface of the memory blank body;
step S5: etching the side edge of the memory blank for multiple times in sequence to form a plurality of connecting grooves which are communicated with the electrode material layers in sequence, wherein the connecting grooves are communicated to form a groove part;
step S6: depositing an insulating material in the groove part to form a third insulating layer, and then polishing the memory blank;
step S7: etching the other side of the memory blank body relative to the third insulating layer until the heating electrode layer is formed so as to form a first electrode groove, and depositing the superconducting electrode material in the first electrode groove;
step S8: etching each connecting groove until the electrode material layer corresponding to the connecting groove so as to form a plurality of second electrode grooves, and depositing the superconducting electrode material in each second electrode groove;
step S9: and polishing the surface of the memory blank to obtain the three-dimensional superconducting electrode material phase change memory.
2. The method of manufacturing a three-dimensional superconducting electrode material phase change memory according to claim 1, wherein the superconducting electrode material is a niobium material.
3. The method as claimed in claim 1, wherein the memory blank is polished by chemical mechanical polishing in steps S4, S6 and S9.
4. The method as claimed in claim 1, wherein a gate tube is further disposed on the substrate.
5. The method of manufacturing a three-dimensional superconducting electrode material phase change memory according to claim 1, wherein the first insulating layer, the second insulating layer, and the third insulating layer are formed of silicon dioxide and/or silicon nitride, respectively.
6. The method for manufacturing a three-dimensional superconducting electrode material phase change memory according to claim 1, wherein in step S3, the phase change material layer is made of germanium antimony tellurium material and its doped material or titanium antimony tellurium material and its doped material.
7. The method for manufacturing a three-dimensional superconducting electrode material phase change memory according to claim 1, wherein the thickness of the electrode material layer is smaller than the thickness of the first insulating layer in step S1.
8. A three-dimensional superconducting electrode material phase change memory, which is prepared by the preparation method of any one of claims 1 to 7, and specifically comprises:
the substrate is arranged at the bottom of the three-dimensional superconducting electrode material phase change memory;
a plurality of first insulating layers and a plurality of electrode material layers alternately stacked on the single-crystal silicon substrate, the topmost layer and the bottommost layer being the first insulating layers;
a first groove connected from the first insulating layer of the topmost layer to the first insulating layer of the bottommost layer; the phase change material layer is arranged on the first groove and the upper surface of the first insulating layer at the bottommost layer;
the heating electrode layer is arranged on the upper surface of the phase change material layer;
a second insulating layer disposed on an upper surface of the heating electrode layer;
the third insulating layer is arranged on the side edge of the second insulating layer, and the bottom of the third insulating layer is respectively connected with each electrode material layer;
the first electrode is arranged on the other side edge, opposite to the third insulating layer, of the second insulating layer, and the bottom of the first electrode is connected with the heating electrode layer;
the plurality of second electrodes are arranged in the third insulating layer, and the bottom of each second electrode is correspondingly connected with one electrode material layer;
the electrode material layer, the heating electrode layer, the first electrode and the second electrode are all superconducting electrode materials.
9. The phase change memory of the three-dimensional superconducting electrode material as claimed in claim 8, wherein the superconducting electrode material is a niobium material, and the phase change material layer is made of germanium antimony tellurium material and its doped material or titanium antimony tellurium material and its doped material.
10. The three-dimensional superconducting electrode material phase change memory according to claim 8, wherein the first insulating layer, the second insulating layer, and the third insulating layer are respectively formed of silicon dioxide and/or silicon nitride.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102637820A (en) * | 2011-02-09 | 2012-08-15 | 中芯国际集成电路制造(上海)有限公司 | Phase change random access memory forming method |
| CN103682094A (en) * | 2013-12-11 | 2014-03-26 | 上海新安纳电子科技有限公司 | Phase change memory structure and manufacturing method thereof |
| US9135992B2 (en) * | 2009-06-08 | 2015-09-15 | Micron Technology, Inc. | Methods for forming memory devices with reduced operational energy in phase change material |
| CN105428528A (en) * | 2015-12-15 | 2016-03-23 | 上海新储集成电路有限公司 | Preparation method of memory cells of three-dimensional phase change memorizer |
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| US8559217B2 (en) * | 2010-12-10 | 2013-10-15 | International Business Machines Corporation | Phase change material cell with stress inducer liner |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9135992B2 (en) * | 2009-06-08 | 2015-09-15 | Micron Technology, Inc. | Methods for forming memory devices with reduced operational energy in phase change material |
| CN102637820A (en) * | 2011-02-09 | 2012-08-15 | 中芯国际集成电路制造(上海)有限公司 | Phase change random access memory forming method |
| CN103682094A (en) * | 2013-12-11 | 2014-03-26 | 上海新安纳电子科技有限公司 | Phase change memory structure and manufacturing method thereof |
| CN105428528A (en) * | 2015-12-15 | 2016-03-23 | 上海新储集成电路有限公司 | Preparation method of memory cells of three-dimensional phase change memorizer |
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