CN108039384B - Solar power generation device - Google Patents
Solar power generation device Download PDFInfo
- Publication number
- CN108039384B CN108039384B CN201711396952.XA CN201711396952A CN108039384B CN 108039384 B CN108039384 B CN 108039384B CN 201711396952 A CN201711396952 A CN 201711396952A CN 108039384 B CN108039384 B CN 108039384B
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- China
- Prior art keywords
- electrodes
- current collecting
- electrode current
- heat dissipation
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010248 power generation Methods 0.000 title claims abstract description 19
- 230000017525 heat dissipation Effects 0.000 claims abstract description 39
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar power generation device, which utilizes a heat dissipation insulating layer to separate a front contact electrode and a back electrode so as to enable the front contact electrode and the back electrode not to be in the same plane, thereby avoiding short circuit, realizing flexible wiring, and increasing energy loss due to higher heat density by using the heat dissipation insulating layer; the laminated arrangement of the heat dissipation insulating layers and the use of the silicon carbide columns not only enhance the adhesion force, but also improve the heat dissipation; the vertical arrangement in the second embodiment can avoid mutual interference and further prevent short circuit, and the current collecting electrode is used to avoid the problem of electric leakage of a plurality of wires.
Description
Technical Field
The invention relates to the field of solar cell power generation, belongs to the classification number of H01L31/00 and particularly relates to a solar power generation device.
Background
a solar power generation module in the prior art can be seen from fig. 1-2, a front electrode 5 on a first surface and a back electrode 2 and a front contact electrode 3 on a second surface are arranged on a silicon substrate 1, wherein the front contact electrode 3 is electrically connected with the front electrode 5 through a via electrode 4, the back electrode 2 and the front contact electrode 3 are strip electrodes arranged in parallel, since the strip electrodes are located in the same plane, a leading-out electrode (assumed as a positive electrode) a1-a4 and a leading-out electrode (assumed as a negative electrode) B1-B4 thereof must be led out from different sides, the terminal arrangement is inflexible and increases the loss of a battery panel, and in addition, due to the form of two electrodes arranged in parallel, the risk of mutual interference and short circuit can occur between the two electrodes; and it requires a plurality of wirings (a1-a4, B1-B4), the possibility of electric leakage and disconnection at the wirings increases.
disclosure of Invention
In order to solve the above problems, the present invention provides a solar power generation device, which includes a silicon substrate having a first surface receiving light and a second surface opposite to the first surface and facing away from the light, and including a square central functional region provided with a PN junction and an annular redundant region surrounding the central functional region; the solar cell comprises a first surface, a second surface and a heat dissipation insulating layer, wherein the first surface is provided with a plurality of dot-shaped array front electrodes, the second surface is provided with a plurality of linear back electrodes which are arranged in parallel along a first direction and a strip-shaped back electrode current collecting electrode which is electrically connected with the back electrodes and extends along a second direction vertical to the first direction, the second surface is also provided with the heat dissipation insulating layer, and the heat dissipation insulating layer covers the whole second surface, the back electrodes and the back electrode current collecting electrode; a plurality of linear front contact electrodes which are arranged in parallel along a first direction and a strip-shaped positive electrode current collecting electrode which is electrically connected with the front contact electrodes and extends along a second direction are arranged on the heat dissipation insulating layer, and the back electrode current collecting electrode and the positive electrode current collecting electrode are positioned in the redundant region and are close to the same edge of the silicon substrate; the plurality of front electrodes are electrically connected to the plurality of front contact electrodes through a plurality of via electrodes penetrating the silicon substrate and the thermally conductive insulating layer.
the invention also provides another solar power generation device which comprises a silicon substrate, wherein the silicon substrate is provided with a first surface for receiving light and a second surface opposite to the first surface and facing away from the light, and the silicon substrate comprises a square central functional area provided with a PN junction and an annular redundant area surrounding the central functional area; the solar cell comprises a first surface, a second surface and a heat dissipation insulating layer, wherein the first surface is provided with a plurality of dot-shaped array front electrodes, the second surface is provided with a plurality of linear front contact electrodes which are arranged in parallel along a first direction, and strip-shaped positive electrode current collecting electrodes which are electrically connected with the front contact electrodes and extend along a second direction perpendicular to the first direction, the second surface is also provided with the heat dissipation insulating layer, and the heat dissipation insulating layer covers the whole second surface, the front contact electrodes and the positive electrode current collecting electrodes; the heat dissipation insulating layer is provided with a plurality of linear back electrodes which are arranged in parallel along a second direction and strip-shaped back electrode current collecting electrodes which are electrically connected with the plurality of back electrodes and extend along the first direction, the back electrode current collecting electrodes and the positive electrode current collecting electrodes are positioned in the redundant area, the positive electrode current collecting electrodes are close to a first edge of the silicon substrate, and the back electrode current collecting electrodes are close to other edges of the silicon substrate, which are perpendicular to the first edge; the plurality of front electrodes are electrically connected to the plurality of front contact electrodes through a plurality of via electrodes penetrating the silicon substrate.
According to an embodiment of the present invention, the heat dissipation insulating layer is a stacked structure of a silicon dioxide layer and a silicon carbide layer, and the silicon dioxide layer is provided with a plurality of heat conduction pillars, the heat conduction pillars physically connect the second surface and the silicon carbide layer, and the heat conduction pillars are made of silicon carbide.
According to the embodiment of the invention, the plurality of back electrodes are connected to the back electrode contact part of the second surface through a plurality of through holes penetrating through the heat dissipation insulating layer, and the through holes are filled with a polysilicon material.
According to an embodiment of the present invention, the width of the positive electrode current collecting electrode is 2 times that of each of the plurality of front contact electrodes, and the width of the back electrode current collecting electrode is 1.2-1.5 times that of each of the plurality of back electrodes.
According to an embodiment of the present invention, the positive electrode current collecting electrode and the back electrode current collecting electrode are each in a plurality of strips without repeatedly connecting the plurality of front contact electrodes and the plurality of back electrodes, respectively.
According to an embodiment of the present invention, the positive electrode current collector is one, the number of the back electrode current collector is two, the first back electrode current collector is located on a second side perpendicular to the first side, the second back electrode current collector is located on a third side perpendicular to the first side, and the second side and the third side are two sides opposite to each other in parallel.
The invention has the following advantages:
(1) The front contact electrode and the back electrode are separated by the heat dissipation insulating layer so as not to be on the same plane, short circuit is avoided, flexible wiring can be realized, and energy loss caused by high heat density is increased due to the use of the heat dissipation insulating layer;
(2) The laminated arrangement of the heat dissipation insulating layers and the use of the silicon carbide columns not only enhance the adhesion force, but also improve the heat dissipation;
(3) The vertical arrangement in the second embodiment can avoid mutual interference and further prevent short circuit, and the current collecting electrode is used to avoid the problem of electric leakage of a plurality of wires.
Drawings
Fig. 1-2 are cross-sectional and top views of a prior art solar power generation device;
fig. 3 to 4 are a sectional view and a plan view of a solar power generating device according to a first embodiment of the present invention;
Fig. 5 to 6 are a sectional view and a plan view of a solar power generation device according to a second embodiment of the present invention.
Detailed Description
First embodiment
Referring to fig. 3 to 4, the solar power generation device of the first embodiment includes a silicon substrate 1, the silicon substrate 1 having a first face receiving light and a second face opposite to the first face facing away from the light, and the silicon substrate including a square central functional region 11 provided with a PN junction and an annular redundant region 12 surrounding the central functional region 11; the solar cell comprises a first surface and a second surface, wherein the first surface is provided with a plurality of dot-shaped array front electrodes 5, the second surface is provided with a plurality of linear back electrodes 2 which are arranged in parallel along a first direction and a strip-shaped back electrode current collecting electrode 7 which is electrically connected with the back electrodes 2 and extends along a second direction perpendicular to the first direction, the second surface is also provided with a heat dissipation insulating layer 6, and the heat dissipation insulating layer 6 covers the whole second surface, the back electrodes 2 and the back electrode current collecting electrode 7; a plurality of linear front contact electrodes 3 arranged in parallel along a first direction and a strip-shaped positive current collecting electrode 8 electrically connected with the front contact electrodes 3 and extending along a second direction are arranged on the heat dissipation insulating layer 6, and the back electrode current collecting electrode 7 and the positive current collecting electrode 8 are positioned in the redundant region 12 and close to the same side of the silicon substrate 1; the plurality of front electrodes 5 are electrically connected to the plurality of front contact electrodes 3 through a plurality of via electrodes 4 penetrating the silicon substrate 1 and the heat-dissipating insulating layer 6.
According to the embodiment of the present invention, the heat dissipation insulating layer 6 has a stacked structure of a silicon dioxide layer and a silicon carbide layer, and the silicon dioxide layer is provided with a plurality of heat conduction pillars, the heat conduction pillars physically connect the second surface and the silicon carbide layer, and the heat conduction pillars are made of silicon carbide. Although not shown, the main purpose thereof is to increase heat dissipation performance and prevent peeling of the heat dissipation insulating layer 6 from the silicon substrate 1.
The width of the positive electrode current collecting electrode 8 is 2 times that of each of the plurality of front contact electrodes 3, and the width of the back electrode current collecting electrode 7 is 1.2-1.5 times that of each of the plurality of back electrodes 2. The positive electrode current collecting electrode 8 and the back electrode current collecting electrode 7 may be each in a plurality of strips, which are not repeatedly connected to the plurality of front contact electrodes 3 and the plurality of back electrodes 2, respectively.
Second embodiment
Referring to fig. 5 to 6, the present invention also provides another solar power generation device, which includes a silicon substrate 1, wherein the silicon substrate 1 has a first surface for receiving light and a second surface opposite to the first surface and facing away from the light, and the silicon substrate 1 includes a square central functional region 11 provided with a PN junction and a ring-shaped redundant region 12 surrounding the central functional region 11; the solar cell comprises a first surface and a second surface, wherein the first surface is provided with a plurality of dot-shaped array front electrodes 5, the second surface is provided with a plurality of linear front contact electrodes 3 which are arranged in parallel along a first direction and a strip-shaped positive electrode current collecting electrode 8 which is electrically connected with the front contact electrodes 3 and extends along a second direction perpendicular to the first direction, the second surface is also provided with a heat dissipation insulating layer 6, and the heat dissipation insulating layer 6 covers the whole second surface, the front contact electrodes 3 and the positive electrode current collecting electrode 8; a plurality of linear back electrodes 2 arranged in parallel along a second direction and a strip-shaped back electrode current collecting electrode 7 electrically connected with the plurality of back electrodes 2 and extending along the first direction are arranged on the heat dissipation insulating layer 6, the back electrode current collecting electrode 7 and the positive electrode current collecting electrode 8 are positioned in the redundant region 12, the positive electrode current collector 8 is close to a first edge of the silicon substrate 1, and the back electrode current collecting electrode 7 is close to the other edge of the silicon substrate 1 perpendicular to the first edge; the plurality of front electrodes 5 are electrically connected to the plurality of front contact electrodes 3 through a plurality of via electrodes 4 penetrating the silicon substrate.
According to the embodiment of the present invention, the heat dissipation insulating layer 6 is a laminated structure of a silicon dioxide layer and a silicon carbide layer, and the silicon dioxide layer is provided with a plurality of heat conduction pillars, the heat conduction pillars physically connect the second surface and the silicon carbide layer, and the heat conduction pillars are made of silicon carbide material; the back electrodes 2 are connected to the back electrode contact part of the second surface through a plurality of via holes 9 penetrating through the heat dissipation insulating layer 6, and polysilicon materials are filled in the via holes 9.
The width of the positive electrode current collecting electrode 8 is 2 times that of each of the plurality of front contact electrodes 3, and the width of the back electrode current collecting electrode 7 is 1.2-1.5 times that of each of the plurality of back electrodes 2.
According to the embodiment of the invention, the number of the positive electrode current collecting electrodes 8 is one, the number of the back electrode current collecting electrodes 7 is two, the first back electrode current collecting electrode is positioned on a second side perpendicular to the first side, the second back electrode current collecting electrode is positioned on a third side perpendicular to the first side, and the second side and the third side are two sides which are opposite in parallel.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (7)
1. A solar power generation device comprising a silicon substrate having a first face receiving light and a second face opposite to the first face facing away from the light, and the silicon substrate comprising a square central functional region provided with a PN junction and an annular redundant region surrounding the central functional region; the solar cell comprises a first surface, a second surface and a heat dissipation insulating layer, wherein the first surface is provided with a plurality of dot-shaped array front electrodes, the second surface is provided with a plurality of linear back electrodes which are arranged in parallel along a first direction and a strip-shaped back electrode current collecting electrode which is electrically connected with the back electrodes and extends along a second direction vertical to the first direction, the second surface is also provided with the heat dissipation insulating layer, and the heat dissipation insulating layer covers the whole second surface, the back electrodes and the back electrode current collecting electrode; a plurality of linear front contact electrodes which are arranged in parallel along a first direction and a strip-shaped positive electrode current collecting electrode which is electrically connected with the front contact electrodes and extends along a second direction are arranged on the heat dissipation insulating layer, and the back electrode current collecting electrode and the positive electrode current collecting electrode are positioned in the redundant region and are close to the same edge of the silicon substrate; the plurality of front electrodes are electrically connected to the plurality of front contact electrodes through a plurality of via electrodes penetrating the silicon substrate and the heat-dissipating insulating layer.
2. A solar power generation device comprising a silicon substrate having a first face receiving light and a second face opposite to the first face facing away from the light, and the silicon substrate comprising a square central functional region provided with a PN junction and an annular redundant region surrounding the central functional region; the solar cell comprises a first surface, a second surface and a heat dissipation insulating layer, wherein the first surface is provided with a plurality of dot-shaped array front electrodes, the second surface is provided with a plurality of linear front contact electrodes which are arranged in parallel along a first direction, and strip-shaped positive electrode current collecting electrodes which are electrically connected with the front contact electrodes and extend along a second direction perpendicular to the first direction, the second surface is also provided with the heat dissipation insulating layer, and the heat dissipation insulating layer covers the whole second surface, the front contact electrodes and the positive electrode current collecting electrodes; the heat dissipation insulating layer is provided with a plurality of linear back electrodes which are arranged in parallel along a second direction and strip-shaped back electrode current collecting electrodes which are electrically connected with the plurality of back electrodes and extend along the first direction, the back electrode current collecting electrodes and the positive electrode current collecting electrodes are positioned in the redundant area, the positive electrode current collecting electrodes are close to a first edge of the silicon substrate, and the back electrode current collecting electrodes are close to other edges of the silicon substrate, which are perpendicular to the first edge; the plurality of front electrodes are electrically connected to the plurality of front contact electrodes through a plurality of via electrodes penetrating the silicon substrate.
3. Solar power generation device according to claim 1 or 2, characterized in that: the heat dissipation insulating layer is of a laminated structure of a silicon dioxide layer, a silicon carbide layer and the like, a plurality of heat conduction columns are arranged in the silicon dioxide layer and physically connected with the second surface and the silicon carbide layer, and the heat conduction columns are made of silicon carbide materials.
4. Solar power generation device according to claim 2, characterized in that: the back electrodes are connected to the back electrode contact part of the second surface through a plurality of through holes penetrating through the heat dissipation insulating layer, and polycrystalline silicon materials are filled in the through holes.
5. Solar power generation device according to claim 1 or 2, characterized in that: the width of the positive electrode current collecting electrode is 2 times that of each of the front contact electrodes, and the width of the back electrode current collecting electrode is 1.2-1.5 times that of each of the back contact electrodes.
6. Solar power generation device according to claim 1 or 2, characterized in that: the positive electrode collector electrode is a plurality of strips connected to the plurality of front contact electrodes; the back electrode current collecting electrodes are in a plurality of strips and are connected to the back electrodes.
7. solar power generation device according to claim 2, characterized in that: the number of the positive electrode current collecting electrodes is one, the number of the back electrode current collecting electrodes is two, the first back electrode current collecting electrode is positioned on a second side perpendicular to the first side, the second back electrode current collecting electrode is positioned on a third side perpendicular to the first side, and the second side and the third side are two sides which are opposite in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711396952.XA CN108039384B (en) | 2017-12-21 | 2017-12-21 | Solar power generation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711396952.XA CN108039384B (en) | 2017-12-21 | 2017-12-21 | Solar power generation device |
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| Publication Number | Publication Date |
|---|---|
| CN108039384A CN108039384A (en) | 2018-05-15 |
| CN108039384B true CN108039384B (en) | 2019-12-13 |
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| CN201711396952.XA Active CN108039384B (en) | 2017-12-21 | 2017-12-21 | Solar power generation device |
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| CN (1) | CN108039384B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110190136A (en) * | 2019-04-23 | 2019-08-30 | 北京点域科技有限公司 | A kind of MWT solar battery and its preparation process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5025184B2 (en) * | 2006-07-28 | 2012-09-12 | 京セラ株式会社 | Solar cell element, solar cell module using the same, and manufacturing method thereof |
| US20130000715A1 (en) * | 2011-03-28 | 2013-01-03 | Solexel, Inc. | Active backplane for thin silicon solar cells |
| CN203038932U (en) * | 2012-11-20 | 2013-07-03 | 上饶光电高科技有限公司 | Back emitter solar cell |
| CN104064608B (en) * | 2014-05-28 | 2016-08-24 | 晶澳（扬州）太阳能科技有限公司 | A kind of without main grid back contact solar cell assembly and preparation method thereof |
| CN104269453B (en) * | 2014-09-28 | 2016-06-01 | 苏州中来光伏新材股份有限公司 | Without main grid, high-level efficiency back contact solar cell backboard, assembly and preparation technology |
| CN104253169B (en) * | 2014-09-28 | 2016-09-07 | 泰州中来光电科技有限公司 | Without main grid, high efficiency back contact solar cell module, assembly and preparation technology |
| CN104538461A (en) * | 2015-01-16 | 2015-04-22 | 浙江晶科能源有限公司 | MWT solar energy battery piece |
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