CN108039341A - 一种双面冷却式三维结构功率模块 - Google Patents
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Abstract
一种双面冷却式三维结构功率模块,涉及电力电子和功率模块封装技术领域。由下层DBC板、中层DBC板和上层DBC板组成,下层板和上层板均为双面覆铜,中层板为单面覆铜;下层板的背面铜层、上层板的背面铜层均与外部散热器相连;下层板的正面铜层通过陶瓷层覆铜技术和中层板的陶瓷层背面相连;中层板的正面铜层部分区域设计有导电过孔,利用导电过孔将其在中层板上所在铜层和下层板的正面铜层进行电连接;功率二极管、功率开关管通过焊料与中、上层板的正面铜层进行电连接。采用了多层DBC板结合过孔导电的三维走线结构,极大的减小了高频线路的回路长度和回路面积,减小了回路上的寄生参数的影响,很大程度上提高了模块的开关特性。
Description
技术领域
本发明涉及电力电子和功率模块封装技术领域,具体是涉及一种双面冷却式三维结构功率模块,适用于大功率和高功率密度的电力电子半导体模块、高频开关电源、电动机驱动模块等。
背景技术
电力电子装置正向高功率密度和集成化方向发展,由碳化硅等新型半导体材料为代表的新一代宽禁带半导体带来了更快速的开关速率,更高的开关频率,更高的工作温度和更好的导热性能,大大促进了高功率密度和集成化方向的发展速度,然而,新技术和新产品也带来了问题。首先,高速开关速度对线路的寄生参数提出了更高的要求,寄生参数已经成为新型半导体器件的应用瓶颈之一,新型半导体器件要求高频回路越小越好,线路的寄生参数越小越好。其次,高功率密度和集成化带来了散热问题,尽管新型功率半导体具有更高工作结温和更好的导热等优点,然而在更高功率密度情况下,散热问题依然是个严峻的问题。
在大功率应用中,功率模块是人们普遍采用的器件应用形式,功率模块内部电路在设计上具有灵活性的特点,这使得人们能够针对不同的应用场合而给出最合适的模块设计。然而,现有的商业化模块,是基于传统硅材料功率半导体的应用性能以最普遍的使用情况进行的设计。传统的商业化模块,内部开关回路走线长、面积大,回路寄生参数较高,这种模块内部结构已经很难满足目前新型材料功率半导体的应用需求,也无法满足快速发展的功率集成化要求。为了适应电力电子装置在高功率密度和集成化方向上的发展,新式的功率模块设计势在必行。
发明内容
针对目前存在的上述技术问题,本发明提供了一种双面冷却式三维结构功率模块,提高了散热的效率及模块的可靠性,使其更加适应于高功率密度的应用场合。
为了实现上述目的,本发明所采用的技术方案为:
一种双面冷却式三维结构功率模块,由垂直方向上为层叠结构的下层DBC板、中层DBC板和上层DBC板组成,下层DBC板和上层DBC板均为双面覆铜,中层DBC板为单面覆铜;
下层DBC板的背面铜层、上层DBC板的背面铜层均与外部散热器相连;
下层DBC板的正面铜层通过陶瓷层覆铜技术和中层DBC板的陶瓷层背面相连;
中层DBC板的正面铜层部分区域设计有第一导电过孔、第二导电过孔,利用导电过孔将其在中层DBC板上所在铜层和下层DBC板的正面铜层进行电连接;
中层DBC板的正面铜层、上层DBC板的正面铜层均由多个区域构成,第二功率开关管、第一功率二极管布局在中层DBC板的正面铜层同一区域上,第二功率二极管、第一功率开关管布局在上层DBC板的正面铜层同一区域上,功率二极管、功率开关管通过焊料与其对应的DBC板铜层进行电连接;
中层DBC板和上层DBC板上还设计有数个金属填充物,使上层、中层板不同区域的铜层连通以形成电路拓扑结构,同时,使上、中和下层DBC板在层叠后,在下层DBC板的正面铜层和中层DBC板的正面铜层的边缘形成各个功能区域。
与现有技术相比,本发明的有益效果表现在:
1)采用多层DBC板并通过过孔走线,构成三维结构式线路。三维结构式线路极大减小了高频回路的回路长度和面积,改善了分布参数,减小并抑制了回路上的寄生电感作用,从而提高了功率模块的动态性能,也增加了模块的可靠性。
2)模块的上下表面皆可与散热器相接,从而构成双面冷却式散热结构。双面冷却式散热,增加了功率模块的散热途径,提高了功率模块的散热能力和功率容量,同时也增强了模块的热可靠性。
3)、除了采用三层DBC板结构,在实际应用中,还可以针对不同的需求和设计采用更多或更少层数DBC板的结构。
附图说明
图1为三层DBC板的每个DBC板各自的主要结构和布局图;
图2为中层DBC板和上层DBC板相接合过程中的接合对应位置关系图;
图3为三层DBC板最终构成三维结构模块示意图;
图1-3中:
1-下层DBC板,3-中层DBC板,7-上层DBC板;
2-下层DBC板的正面铜层,13-中层DBC板的正面铜层,6-上层DBC板的背面铜层,14-上层DBC板的正面铜层;
11-第一功率二极管,15-第二功率二极管;
8-第一功率开关管,12-第二功率开关管;
5-第一导电过孔,10-第二导电过孔;
4-金属填充物;
16-半桥电路输入和输出低压端共同导电端子引出区域;
17-半桥电路负载高压端的导电端子引出区域;
18-半桥电路输入高压端导电端子引出区域;
19-半桥电路上桥臂功率开关管信号地导电端子引出区域;
20-半桥电路上桥臂功率开关管栅极导电端子引出区域;
21-半桥电路下桥臂功率开关管栅极导电端子引出区域;
22-半桥电路下桥臂功率开关管信号地导电端子引出区域。
具体实施方式
下面结合附图并以内部拓扑半桥电路为例对本发明的双面冷却式三维结构功率模块作进一步的介绍。
请参阅图1和2所示,一种双面冷却式三维结构功率模块,由垂直方向上为层叠结构的下层DBC板1、中层DBC板3和上层DBC板7组成,下层DBC板1和上层DBC板7均为双面覆铜,中层DBC板3则是单面覆铜。
三维结构功率模块的上下两面,即下层DBC板的背面铜层(图中未示出)、上层DBC板的背面铜层6可以与外部散热器相连,实现双面冷却功能。
中层DBC板的正面铜层13、上层DBC板的正面铜层14均由多个区域构成,第二功率开关管12、第一功率二极管11布局在中层DBC板的正面铜层13同一区域上,第二功率二极管15、第一功率开关管8布局在上层DBC板的正面铜层14同一区域上,功率二极管、功率开关管通过焊料如焊锡、纳米银等材料与其对应的DBC板铜层进行电连接。
下层DBC板的正面铜层2通过陶瓷层覆铜技术和中层DBC板3的陶瓷层背面相连。中层DBC板的正面铜层13部分区域设计有第一导电过孔5、第二导电过孔10,利用导电过孔将其在中层DBC板3上所在铜层和下层DBC板的正面铜层2进行电连接。
中层DBC板3和上层DBC板7上还设计有数个金属填充物4(如铜、银、锡),其目的是使上层、中层板不同区域的铜层连通以形成电路拓扑结构,同时,使上、中和下层DBC板在层叠后,在下层DBC板的正面铜层2和中层DBC板的正面铜层13的边缘形成各个功能区域。
请结合图3所示,将半桥电路应用于本发明的三维结构功率模块时,下层DBC板的正面铜层2的边缘作为上半桥电路输入和输出低压端共同导电端子引出区域16,依次通过第一导电过孔5、第二导电过孔10与中层DBC板的正面铜层13相关区域连接,封装后,在金属填充物4的连接下使两个功率二极管和开关管连接于电路中,再通过几个金属填充物4继而在中层DBC板的正面铜层13上形成半桥电路负载高压端的导电端子引出区域17、半桥电路输入高压端导电端子引出区域18、半桥电路上桥臂功率开关管信号地导电端子引出区域19、半桥电路上桥臂功率开关管栅极导电端子引出区域20、半桥电路下桥臂功率开关管栅极导电端子引出区域21、半桥电路下桥臂功率开关管信号地导电端子引出区域22。
本发明给出了一种耐高温的功率模块,其采用了一种新型三维结构布局。在这种新型的功率模块中,采用了多层DBC板结合过孔导电的三维走线结构,极大的减小了高频线路的回路长度和回路面积,减小了回路上的寄生参数的影响,很大程度上提高了模块的开关特性。而且,该模块实现了双面冷却的散热方式,提高了散热的效率,从而能提高模块的可靠性,使其更加适应于高功率密度的应用场合。
以上内容仅仅是对本发明的构思所作的举例和说明,所属本技术领域的技术人员对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,只要不偏离发明的构思或者超越本权利要求书所定义的范围,均应属于本发明的保护范围。
Claims (1)
1.一种双面冷却式三维结构功率模块,其特征在于,由垂直方向上为层叠结构的下层DBC板(1)、中层DBC板(3)和上层DBC板(7)组成,下层DBC板(1)和上层DBC板(7)均为双面覆铜,中层DBC板(3)为单面覆铜;
下层DBC板的背面铜层、上层DBC板的背面铜层(6)均与外部散热器相连;
下层DBC板的正面铜层(2)通过陶瓷层覆铜技术和中层DBC板(3)的陶瓷层背面相连;
中层DBC板的正面铜层(13)部分区域设计有第一导电过孔(5)、第二导电过孔(10),利用导电过孔将其在中层DBC板(3)上所在铜层和下层DBC板的正面铜层(2)进行电连接;
中层DBC板的正面铜层(13)、上层DBC板的正面铜层(14)均由多个区域构成,第二功率开关管(12)、第一功率二极管(11)布局在中层DBC板的正面铜层(13)同一区域上,第二功率二极管(15)、第一功率开关管(8)布局在上层DBC板的正面铜层(14)同一区域上,功率二极管、功率开关管通过焊料与其对应的DBC板铜层进行电连接;
中层DBC板(3)和上层DBC板(7)上还设计有数个金属填充物(4),使上层、中层板不同区域的铜层连通以形成电路拓扑结构,同时,使上、中和下层DBC板在层叠后,在下层DBC板的正面铜层(2)和中层DBC板的正面铜层(13)的边缘形成各个功能区域。
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CN111952259A (zh) * | 2019-05-15 | 2020-11-17 | 株式会社电装 | 半导体装置 |
US11343943B1 (en) | 2020-11-23 | 2022-05-24 | Abb Schweiz Ag | Heat dissipation for power switches |
US11978693B2 (en) | 2020-07-30 | 2024-05-07 | Infineon Technologies Ag | Semiconductor device package comprising side walls connected with contact pads of a semiconductor die |
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CN111146164B (zh) * | 2019-12-25 | 2022-02-22 | 西安交通大学 | 一种适用于恶劣环境的宽禁带功率模块的封装结构 |
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US11343943B1 (en) | 2020-11-23 | 2022-05-24 | Abb Schweiz Ag | Heat dissipation for power switches |
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