CN108034972A - A kind of silicon based electrode surface modifying method based on porous gold-Pt nanoparticle - Google Patents

A kind of silicon based electrode surface modifying method based on porous gold-Pt nanoparticle Download PDF

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CN108034972A
CN108034972A CN201710936101.3A CN201710936101A CN108034972A CN 108034972 A CN108034972 A CN 108034972A CN 201710936101 A CN201710936101 A CN 201710936101A CN 108034972 A CN108034972 A CN 108034972A
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silicon substrate
microelectrode
gold
copper
electrode
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赵宗亚
李中伟
任武
王昌
于毅
林俊堂
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Xinxiang Medical University
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/567Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of platinum group metals
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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    • C25D3/02Electroplating: Baths therefor from solutions
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces

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Abstract

The invention discloses a kind of silicon based electrode surface modifying method based on porous golden Pt nanoparticle, this method carries out surface preparation to silicon substrate microelectrode first, then pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution, deposits one layer of three metal alloy nanoparticle of golden platinoid on the site of silicon substrate microelectrode using the method for electro-deposition;Finally the silicon substrate microelectrode that golden three metal alloy nanoparticle of platinoid is modified is immersed in copper etching liquid, the copper component in alloy nanoparticle is fallen by electrochemistry selective etch, finally obtains the nano-particle modified silicon substrate microelectrode of porous plation.This method device therefor is cheap, and operating procedure is simple, strong applicability, high treating effect, reliable and stable.Various silicon substrate microelectrode surfaces are can be widely applied to be modified.The interface impedance of silicon substrate microelectrode site can be greatly reduced, improve its electroneurographic signal in body acquisition performance and electro photoluminescence performance.

Description

A kind of silicon based electrode surface modifying method based on porous gold-Pt nanoparticle
Technical field
The invention belongs to silicon substrate microelectrode process for modifying surface field, and in particular to one kind is received based on porous gold-platinum alloy The silicon substrate microelectrode surface modifying method of rice grain.
Background technology
Somatic nerves electrical signal collection for neuroscientist study nervous system basic principle provide it is a kind of strong Instrument, and lesions located in deep brain shows big advantage and potentiality in the neural class diseases such as treatment Parkinson.Whether it is refreshing Collection through electric signal still rolls into a ball brain core and carries out electro photoluminescence, and micro- brain electrode is often a part mostly important among these, and The surface characteristic of micro- brain electrode has been largely fixed its electro photoluminescence performance and electroneurographic signal acquisition performance.Due to micro electronmechanical System (Micro-electro-mechanical systems, abbreviation MEMS) technology can with explication electrode size, shape, The batch that multiple record site/stimulation sites prepared on single silicon substrate microelectrode bar and can realize microelectrode can be given birth to Production, therefore, various MEMS silicon substrates microelectrodes were developed and were applied to neuroscience field in recent years.
For MEMS silicon substrate microelectrodes, multiple electro photoluminescence/electrical signal collections are often integrated on single microelectrode bar Site, and the smaller damage to reduce in implantation process to brain tissue of overall dimensions of micro-electrode chip, and reduce microelectrode One of size is inevitably the result is that electrode site interface impedance can significantly increase.The increase of interface impedance often exists Higher thermal noise is introduced in electroneurographic signal gatherer process, for faint electroneurographic signal, this can undoubtedly reduce letter Number collection quality.In addition, the increase of electrode site impedance is unfavorable for the injection of electric charge during electro photoluminescence, micro- brain electrode is reduced Electro photoluminescence performance.Therefore research carries out MEMS silicon substrates microelectrode surface modification to improve its performance, has higher reality Application value.
Currently used silicon substrate microelectrode surface modification technology mainly has physics and chemical vapour deposition technique, plasma etching Method, self-assembled monolayer embrane method and sol-gel process, these techniques can substantially meet the demand of silicon substrate microelectrode surface modification, But the problems such as these techniques are expensive there are equipment, and processing step is complicated, and processing time is long.In recent years, electrochemical deposition method Since equipment is cheap, becomes silicon to preparing the advantages that environmental requirement is relatively low, technique is simple, convenient and efficient and sedimentary morphology controllable Base microelectrode surface is modified widely used method.Relevant researcher uses electrochemical deposition method, in silicon substrate microelectrode Surface deposition platinum black (M á rton G, Bakos I, Fekete Z, et al.Durability of high surface area platinum deposits on microelectrode arrays for acute neural recordings[J] .Journal of Materials Science:Materials in Medicine, 2014,25 (3):931-940), aoxidize Iridium (Kang X, Liu J, Tian H, et al.Optimization and electrochemical characterization of RF-sputtered iridium oxide microelectrodes for electrical stimulation[J].Journal of Micromechanics&Microengineering,2014,24(2):153- 163), gold nano grain (Zhang H, Shih J, Zhu J, et al.Layered nanocomposites from gold Nanoparticles for neural prosthetic devices [J] .Nano Letters, 2012,12 (7):3391- 3398) come to carry out surface modification to microelectrode.But there are surface modification effect is general, machine for these microelectrode surface modifying materials The shortcomings of tool stability is poor.
The data-searching for making to carry out according to applicant, at present, does not relate in existing microelectrode process for modifying surface patent And the silicon substrate microelectrode surface modifying method based on porous gold-platinum alloy nano particle.
The content of the invention
In view of the above-mentioned drawbacks of the prior art or deficiency, it is an object of the present invention to propose it is a kind of based on porous gold- The silicon substrate microelectrode surface modifying method of platinum alloy nano particle, the silicon substrate microelectrode prepared using this method, can be greatly reduced Microelectrode site interface impedance, improves its neural telecommunications collection/electro photoluminescence performance.
In order to realize above-mentioned task, the present invention uses following technical solution:
A kind of silicon substrate microelectrode surface modifying method based on porous gold-platinum alloy nano particle, it is characterised in that include Following steps:
Step 1, silicon substrate microelectrode is respectively cleaned by ultrasonic 5 minutes with ethanol solution, salpeter solution and ultra-pure water successively, ultrasound Silicon substrate microelectrode after cleaning is placed to be spontaneously dried in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution;Adopt With three-electrode system, the electrode site above silicon substrate microelectrode to be finished is working electrode, and large area platinum electrode is to electricity Pole, Ag/AgCl electrodes are the deposition voltage of reference electrode, then application -0.2V or -0.3V, sedimentation time 500s-600s, So as to obtain the silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification;
Step 3:The silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification is immersed in copper etching liquid, is passed through Electrochemistry selective etch falls the copper component in alloy nanoparticle, obtains the nano-particle modified silicon substrate of porous gold-platinum alloy Microelectrode.
According to the present invention, the ethanol solution described in step 1 is with volume ratio 1 according to absolute ethyl alcohol and ultra-pure water:1 prepares Form;Salpeter solution described in step 1 is with volume ratio 1 according to pure salpeter solution and ultra-pure water:1 is formulated.
Further, the gold chloride described in step 2, chloroplatinic acid and copper sulphate mixed solution use the sulfuric acid of 0.5mol/L Solution is formulated, and the total concentration of gold chloride, chloroplatinic acid and copper-bath is 1-2mmol/L, gold chloride, chloroplatinic acid and sulfuric acid The concentration ratio of copper is 2:2:1 or 1:1:1.
Copper etching liquid described in step 3 is the salpeter solution that concentration is 50%-70%, the temperature of etching liquid keep 60 DEG C- Between 80 DEG C, when etch period is 0.5-1 small.
The silicon substrate microelectrode surface modifying method based on porous gold-platinum alloy nano particle of the present invention, passes through electrochemistry Sedimentation and chemical etching method are nano-particle modified in silicon substrate microelectrode site by porous gold-platinum alloy, device therefor price Cheaply, operating procedure is simple, strong applicability, high treating effect, reliable and stable, can be widely used for all kinds silicon substrate microelectrode Surface is modified.
The interface resistance of the nano-particle modified silicon substrate microelectrode of porous gold-platinum alloy that applicant obtains according to the above method Resist and carry out experimental evaluation in somatic nerves electrical signal collection performance, the results showed that, with unmodified microelectrode site, gold nano The modified microelectrode site of grain is compared, its microelectrode site interface impedance is greatly reduced, and the acquisition performance of electroneurographic signal is believed Number signal-to-noise ratio be substantially improved.
Brief description of the drawings
Fig. 1 is the nano-particle modified site (Fig. 1 C) of the obtained porous gold-platinum alloy of embodiment 1, and as control Untreated microelectrode site (Figure 1A), gold nano particle modification site (Figure 1B) scanning electron microscope diagram piece;
Fig. 2 is the nano-particle modified site of the obtained porous gold-platinum alloy of embodiment 1, and is not located as what is compareed Manage microelectrode site, gold nano particle modification site interface impedance curve;
Fig. 3 is the nano-particle modified site (Fig. 3 B) of the obtained porous gold-platinum alloy of embodiment 1, and as control Gold nano particle modification the electroneurographic signal that is collected in rat brain of site (Fig. 3 A);
Below in conjunction with drawings and examples, the present invention is described in further detail.
Embodiment
Applicants have found that porous gold-platinum alloy nano particle has the cooperative effect of two kinds of monometallic nano particles, Compared with corresponding monometallic nano particle (gold or Pt nanoparticle), there is the surface area of bigger, faster electron transmission speed Numerous advantages such as rate, the electro catalytic activity of stronger mechanical stability and higher.In addition, porous nanometer material has larger table Area, can greatly increase electrode-electric solution liquid contact area and have good charge storage, therefore, apply for person By the use of porous gold-platinum alloy nano particle as silicon substrate microelectrode surface modified new-material, and further experimental study is carried out, obtained A kind of silicon substrate microelectrode surface modifying method based on porous gold-platinum alloy nano particle is arrived.
Silicon substrate microelectrode employed in following embodiments, the microelectrode site above it are circular carat (measure of the purity of gold) point, diameter 20 microns.
Embodiment 1:
Step 1:Surface preparation is carried out to silicon substrate microelectrode:
Successively with ethanol solution (absolute ethyl alcohol and the ultrapure water volume ratio 1 that concentration is 50%:1), concentration is 50% nitre Acid solution (pure salpeter solution and ultrapure water volume ratio 1:1) silicon substrate microelectrode is respectively cleaned by ultrasonic 5 minutes with ultra-pure water, and will be clear Silicon substrate microelectrode after washing is placed to be spontaneously dried in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution, is mixed Close solution to be formulated using the sulfuric acid solution of 0.5mol/L, the total concentration of gold chloride, chloroplatinic acid and copper-bath is 1mmol/L, the concentration ratio of gold chloride, chloroplatinic acid and copper sulphate is 2:2:1;Using three-electrode system, the micro- electricity of silicon substrate to be finished Electrode site extremely above is working electrode, and large area platinum electrode is that Ag/AgCl electrodes are reference electrode, then to electrode The deposition voltage of application -0.2V, sedimentation time 600s, so as to obtain the silicon of gold-three metal alloy nanoparticle of platinum-copper modification Base microelectrode;
Step 3:The silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification of gained is immersed copper etching liquid In (concentration be 60% salpeter solution) 1 it is small when, the temperature of etching liquid is maintained at 60 DEG C, falls to close by electrochemistry selective etch Copper component in gold nano grain, finally obtains the nano-particle modified silicon substrate microelectrode of porous gold-platinum alloy.
Embodiment 2:
Step 1:Surface preparation is carried out to silicon substrate microelectrode:
It is successively 50% ethanol solution (absolute ethyl alcohol and ultrapure water volume ratio 1 with concentration:1), concentration is molten for 50% nitric acid Liquid (pure salpeter solution and ultrapure water volume ratio 1:1) silicon substrate microelectrode is respectively cleaned by ultrasonic 5 minutes with ultra-pure water, and by after cleaning Silicon substrate microelectrode place spontaneously dry in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution, is mixed Close solution to be formulated using the sulfuric acid solution of 0.5mol/L, the total concentration of gold chloride, chloroplatinic acid and copper-bath is 1mmol/L, the concentration ratio of gold chloride, chloroplatinic acid and copper sulphate is 1:1:1;Using three-electrode system, the micro- electricity of silicon substrate to be finished Electrode site extremely above is working electrode, and large area platinum electrode is that Ag/AgCl electrodes are reference electrode, then to electrode The deposition voltage of application -0.2V, sedimentation time 600s, so as to obtain the silicon of gold-three metal alloy nanoparticle of platinum-copper modification Base microelectrode;
Step 3:The silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification of gained is immersed copper etching liquid In (concentration be 60% salpeter solution) 0.5 it is small when, the temperature of etching liquid is maintained at 80 DEG C, is fallen by electrochemistry selective etch Copper component in alloy nanoparticle, finally obtains the nano-particle modified silicon substrate microelectrode of porous gold-platinum alloy.
Embodiment 3:
Step 1:Surface preparation is carried out to silicon substrate microelectrode:
Successively with ethanol solution (absolute ethyl alcohol and the ultrapure water volume ratio 1 that concentration is 50%:1), concentration is 50% nitre Acid solution (pure salpeter solution and ultrapure water volume ratio 1:1) silicon substrate microelectrode is respectively cleaned by ultrasonic 5 minutes with ultra-pure water, and will be clear Silicon substrate microelectrode after washing is placed to be spontaneously dried in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution, is mixed Close solution to be formulated using the sulfuric acid solution of 0.5mol/L, the total concentration of gold chloride, chloroplatinic acid and copper-bath is 2mmol/L, the concentration ratio of gold chloride, chloroplatinic acid and copper sulphate is 2:2:1;Using three-electrode system, the micro- electricity of silicon substrate to be finished Electrode site extremely above is working electrode, and large area platinum electrode is that Ag/AgCl electrodes are reference electrode, then to electrode The deposition voltage of application -0.2V, sedimentation time 600s, so as to obtain the silicon of gold-three metal alloy nanoparticle of platinum-copper modification Base microelectrode;
Step 3:The silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification of gained is immersed copper etching liquid In (concentration be 60% salpeter solution) 1 it is small when, the temperature of etching liquid is maintained at 60 DEG C, falls to close by electrochemistry selective etch Copper component in gold nano grain, finally obtains the nano-particle modified silicon substrate microelectrode of porous gold-platinum alloy.
Reference examples:The preparation of the microelectrode site of gold nano particle modification:
Step 1:Surface preparation is carried out to silicon substrate microelectrode, i.e., successively with ethanol solution (the anhydrous second that concentration is 50% Alcohol and ultrapure water volume ratio 1:1) salpeter solution (pure salpeter solution and the ultrapure water volume ratio 1 that, concentration is 50%:1) it is and ultrapure Water is respectively cleaned by ultrasonic 5 minutes silicon substrate microelectrode, and the silicon substrate microelectrode after cleaning is placed and is spontaneously dried in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in the chlorauric acid solution of the sulfuric acid solution preparation of 0.5mol/L In, the concentration of chlorauric acid solution is 1-2mmol/L;Using three-electrode system, the electrode position above silicon substrate microelectrode to be finished Point be working electrode, and for large area platinum electrode for electrode, Ag/AgCl electrodes are reference electrode, then application -0.2V or - The deposition voltage of 0.3V, sedimentation time 500s-600s, so as to obtain the silicon substrate microelectrode of gold nano particle modification;
Morphology characterization and performance test
1st, the nano-particle modified microelectrode site of porous gold-platinum alloy for obtaining embodiment 1, gold prepared by reference examples Nano-particle modified microelectrode site and unmodified microelectrode site are scanned electron microscope experiment, obtained knot Fruit is as shown in Figure 1.It can be seen in fig. 1 that unmodified naked gold electrode site surface is smooth;Gold nano is deposited in the above After particle (Figure 1B), it can be seen that many nano particles in irregular shape, are densely distributed in gold electrode site surface;And The electron micrograph of Fig. 1 C shows that prepared gold-Pt nanoparticle diameter is about 200nm, has the shape of cauliflower-shaped Shape, is uniformly densely distributed in the surface in gold electrode site.(figure is can see from the electron microscope picture of amplification factor higher The embedded figure of 1C), prepared gold-Pt nanoparticle has very coarse surface, and has many differences on nano particle The hole of size, this leads mainly due to the copper component in gold-platinum-copper alloy nano particle is fallen by electrochemistry selective etch Cause.Such nanostructured will greatly reduce the impedance of microelectrode site, increase the surface roughness in site, improve electricity Sub- transfer rate and the electroneurographic signal collection/electro photoluminescence performance for strengthening microelectrode.
2nd, the nano-particle modified microelectrode site of porous gold-platinum alloy for obtaining embodiment 1, prepares in reference examples The microelectrode site of gold nano particle modification and unmodified microelectrode site carry out testing impedance experiment, and obtained result is such as Shown in Fig. 2.Fig. 2 is average impedance change curve of three kinds of microelectrode sites in 1kHz-100kHz frequency ranges.It can see Go out, with the increase of frequency, the trend of monotone decreasing occurs in the impedance of three kinds of microelectrode sites;Unmodified microelectrode site The interface impedance of maximum, and the microelectrode site that porous gold-platinum alloy is nano-particle modified are shown in whole frequency range Impedance in whole frequency range is almost minimum.This explanation, relative to gold nano grain, porous gold-platinum alloy nano particle The interface impedance of microelectrode site can substantially be reduced.
3rd, a main function of silicon substrate microelectrode is the collection realized in somatic nerves electric signal.In order to verify according to this The microelectrode that inventive method was modified can be significantly improved in somatic nerves electrical signal collection performance, embodiment 1 is obtained porous The nano-particle modified site of gold-platinum alloy, and carried out as the site of the gold nano particle modification of control in rat brain Electroneurographic signal collection experiment, the results are shown in Figure 3.Fig. 3 A and 3B are respectively the site of gold nano particle modification, porous gold-platinum The typical spike action potential signals sequence that the site of alloy nanoparticle modification collects.As can be seen that two kinds of microelectrode positions The amplitude of action potential that point collects is not much different, but what the nano-particle modified site of porous gold-platinum alloy collected Spike signals, its ambient noise are smaller.Gathered for the spike action potential signals of two kinds of microelectrode sites of quantitative contrast Quality, average amplitude, the average signal ratio (SNR) of the spike action potential signals collected to two kinds of microelectrode sites carry out Statistical analysis.The result shows that although being averaged detected by the nano-particle modified microelectrode site of porous gold-platinum alloy Between the average spike amplitudes (281.2 ± 39.7) in the site of spike amplitudes (273.7 ± 25.2) and gold nano particle modification And no difference of science of statistics (P > 0.05), but the former average SNR reaches 4.8 ± 0.3, the average SNR of the latter for 3.4 ± 0.4, the former is statistically apparently higher than the latter, this is mainly due to the nano-particle modified microelectrode of porous gold-platinum alloy Being greatly reduced for ambient noise is surveyed in site in physical examination.
It should be appreciated that the description of above-described embodiment is only to explain the present invention, it is the common skill for ease of the technical field Art personnel are understood that and use, and the objects, technical solutions and advantages of the present invention are more clearly understood, and the present invention is not restricted to these Embodiment, person skilled in the art's obtained technical inspiration according to the present invention, it is clear that can be readily to these realities Apply example and make various additions or replacement, and the General Principle of this explanation is applied in other embodiment without carrying out creativeness Work.Therefore, those skilled in the art are not departing from addition that scope made or replacement is regarded as the present invention's Within protection domain.

Claims (4)

1. a kind of silicon based electrode surface modifying method based on porous gold-Pt nanoparticle, it is characterised in that include following step Suddenly:
Step 1, silicon substrate microelectrode is respectively cleaned by ultrasonic 5 minutes with ethanol solution, salpeter solution and ultra-pure water successively, be cleaned by ultrasonic Silicon substrate microelectrode afterwards is placed and spontaneously dried in atmosphere;
Step 2:Pretreated silicon substrate microelectrode is immersed in gold chloride, chloroplatinic acid and copper sulphate mixed solution;Using three Electrode system, the electrode site above silicon substrate microelectrode to be finished are working electrode, large area platinum electrode be to electrode, Ag/AgCl electrodes are the deposition voltage of reference electrode, then application -0.2V or -0.3V, sedimentation time 500s-600s, so that Obtain the silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification;
Step 3:The silicon substrate microelectrode of gold-three metal alloy nanoparticle of platinum-copper modification is immersed in copper etching liquid, passes through electrification Selective etch falls the copper component in alloy nanoparticle, obtains the nano-particle modified micro- electricity of silicon substrate of porous gold-platinum alloy Pole.
2. the method as described in claim 1, it is characterised in that the ethanol solution described in step 1 be according to absolute ethyl alcohol with Ultra-pure water is with volume ratio 1:1 is formulated;Salpeter solution described in step 1 is with volume according to pure salpeter solution and ultra-pure water Than 1:1 is formulated.
3. the method as described in claim 1, it is characterised in that gold chloride, chloroplatinic acid and copper sulphate mixing described in step 2 Solution is formulated using the sulfuric acid solution of 0.5mol/L, and the total concentration of gold chloride, chloroplatinic acid and copper-bath is 1- 2mmol/L, the concentration ratio of gold chloride, chloroplatinic acid and copper sulphate is 2:2:1 or 1:1:1.
4. the method as described in claim 1, it is characterised in that the copper etching liquid described in step 3 is that concentration is 50%-70% Salpeter solution, between 60 DEG C -80 DEG C of the temperature holding of etching liquid, when etch period is 0.5-1 small.
CN201710936101.3A 2017-10-10 2017-10-10 A kind of silicon based electrode surface modifying method based on porous gold-Pt nanoparticle Pending CN108034972A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108802140A (en) * 2018-08-13 2018-11-13 广州钰芯传感科技有限公司 A kind of interdigital electrode and its preparation method and application of porous gold modification
CN111326754B (en) * 2020-03-10 2021-05-14 中南林业科技大学 Preparation method of fusiform platinum nanoparticles
CN117059713A (en) * 2023-10-11 2023-11-14 深圳市领耀东方科技股份有限公司 Preparation method of high-brightness LED chip based on micro-nano processing technology

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Title
CAIXIA XU ET. AL.: "Dealloying to nanoporous Au/Pt alloys and their structure sensitive electrocatalytic properties", 《PHYSICAL CHEMISTRY CHEMICAL PHYSICS》 *
ZONGYA ZHAO ET. AL.: "In Vivo Neural Recording and Electrochemical Performance of Microelectrode Arrays Modified by Rough-Surfaced AuPt Alloy Nanoparticles with Nanoporosity", 《SENSORS》 *
曾志刚等: "纳米多孔金薄膜及其微电极结构的制备", 《真空科学与技术学报》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108802140A (en) * 2018-08-13 2018-11-13 广州钰芯传感科技有限公司 A kind of interdigital electrode and its preparation method and application of porous gold modification
CN111326754B (en) * 2020-03-10 2021-05-14 中南林业科技大学 Preparation method of fusiform platinum nanoparticles
CN117059713A (en) * 2023-10-11 2023-11-14 深圳市领耀东方科技股份有限公司 Preparation method of high-brightness LED chip based on micro-nano processing technology
CN117059713B (en) * 2023-10-11 2024-02-02 深圳市领耀东方科技股份有限公司 Preparation method of high-brightness LED chip based on micro-nano processing technology

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Application publication date: 20180515