CN108022992A - Cell piece and photovoltaic module - Google Patents

Cell piece and photovoltaic module Download PDF

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Publication number
CN108022992A
CN108022992A CN201711489165.XA CN201711489165A CN108022992A CN 108022992 A CN108022992 A CN 108022992A CN 201711489165 A CN201711489165 A CN 201711489165A CN 108022992 A CN108022992 A CN 108022992A
Authority
CN
China
Prior art keywords
cell piece
grid
pad
silicon chip
main grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711489165.XA
Other languages
Chinese (zh)
Inventor
邓士锋
闫新春
董经兵
夏正月
许涛
邢国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canadian Solar Inc
Canadian Solar Manufacturing Changshu Inc
CSI Solar Technologies Inc
Original Assignee
Canadian Solar Manufacturing Changshu Inc
CSI Solar Technologies Inc
Atlas Sunshine Power Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canadian Solar Manufacturing Changshu Inc, CSI Solar Technologies Inc, Atlas Sunshine Power Group Co Ltd filed Critical Canadian Solar Manufacturing Changshu Inc
Priority to CN201711489165.XA priority Critical patent/CN108022992A/en
Publication of CN108022992A publication Critical patent/CN108022992A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The present invention provides a kind of cell piece and photovoltaic module, the cell piece includes silicon chip and is arranged at the cathode grid line of the silicon chip surface, the cathode grid line includes some main grids being parallel to each other and the secondary grid perpendicular to the main grid, the height of the relatively described silicon chip surface of cathode grid line is arranged to 12~16 μm, and the width of the main grid is arranged to 0.1~0.3mm;The number of the main grid is arranged to 9 and wherein one main grids and is located on the center line of the silicon chip.The cathode grid line of cell piece and photovoltaic module of the present invention can effectively reduce resistance, increase photoelectric conversion efficiency, while reduce silver paste consumption, reduce cost.

Description

Cell piece and photovoltaic module
Technical field
The present invention relates to solar energy generation technology field, more particularly to a kind of cell piece and photovoltaic module.
Background technology
At present, the main grid number of crystalline silicon battery plate is provided mainly to 4 or 5, development and city with photovoltaic industry The further demand in field, the more main grid battery chip technologies for being capable of synergy cost declining receive much concern.It is main from cell piece design principle The quantity of grid is more, and string resistance loss is just smaller.The disclosed cell piece having using more main grids and corresponding photovoltaic module in the industry, But factually border is evaluated and tested, the existing cell piece using more main grids not only increases silver paste consumption, also increases follow-up photovoltaic module manufacture During welding quantity required, and power gain unobvious.On the other hand, cell piece is formed as the core of photovoltaic module Part, its main grid number increase can cause subsequently to weld that processing procedure is increasingly complex, and process costs improve;In particular by half chip electricity The photovoltaic module of pond piece more needs to avoid since complex process, manufacture cost improve caused by main grid number is excessive the problems such as.
Therefore, it is necessary to provide a kind of improved cell piece and photovoltaic module.
The content of the invention
Present invention aims at a kind of cell piece and photovoltaic module is provided, resistance can be reduced, increases photoelectric conversion efficiency, Silver paste consumption is reduced at the same time, reduces cost.
For achieving the above object, the present invention provides a kind of cell piece, including silicon chip and is arranged at the silicon chip surface Cathode grid line, the cathode grid line includes some main grids being parallel to each other and the secondary grid perpendicular to the main grid, the cathode The height of the relatively described silicon chip surface of grid line is arranged to 12~16 μm, and the width of the main grid is arranged to 0.1~0.3mm;Institute The number for stating main grid is arranged to 9 and wherein one main grids and is located on the center line of the silicon chip.
As a further improvement on the present invention, the main grid and the distance of the silicon chip respective side edge of the neighbouring silicon chip side Less than the spacing of adjacent two main grids.
As a further improvement on the present invention, the spacing of the adjacent main grid is arranged to 16.5~19mm;The neighbouring silicon The main grid of piece side and the distance of the silicon chip respective side edge are arranged to 10~16mm.
As a further improvement on the present invention, the spacing of adjacent two main grids is consistent.
As a further improvement on the present invention, the silicon chip has parallel to the first side of the main grid, parallel to institute Second side and the bevel edge of the connection first side and second side of secondary grid are stated, the bevel edge extends along the secondary grid The length in direction is less than the distance of the main grid and first side.
As a further improvement on the present invention, the cathode grid line is further included along the spaced some welderings of the main grid Disk.
As a further improvement on the present invention, the pad includes the first pad and the position of neighbouring corresponding main grid head and end The second pad between first pad, first pad are more than the second pad.
As a further improvement on the present invention, the pad includes the first pad and the position of neighbouring corresponding main grid head and end The second pad between first pad, first pad and the second pad are smaller than between adjacent second pad Away from.
As a further improvement on the present invention, the length of the cell piece along the secondary grid extending direction be arranged to 150~ 170mm。
The present invention also provides a kind of photovoltaic module, including some battery strings, the battery strings include some foregoing cell pieces And the cell piece is sequentially connected in series the welding in one.
As a further improvement on the present invention, some battery strings are arranged to front and rear juxtaposition along the main grid extending direction Two groups, battery strings described in two groups are symmetrically distributed, and are arranged on if the photovoltaic module further includes between two Battery pack strings Dry diode, two symmetrical battery strings are connected to the same diode.
As a further improvement on the present invention, the welding is circular welding, and the diameter of the circle welding is arranged to 0.3 ~0.45mm.
As a further improvement on the present invention, the spacing of the adjacent cell piece is arranged to 0.2 in each battery strings ~0.25mm;The spacing of the adjacent battery strings is arranged to 0.25~0.35mm.
As a further improvement on the present invention, the photovoltaic module further includes backboard, packaging adhesive film and glass cover-plate, described Battery strings are fixed between backboard and glass cover-plate by packaging adhesive film.
The beneficial effects of the invention are as follows:Cell piece of the present invention is carried out by the overall style to cathode grid line and main grid structure Optimization design, reduces resistance, increases photoelectric conversion efficiency, while reduces silver paste consumption, reduces cost;And to use above-mentioned electricity While the photovoltaic module of pond piece possesses available power gain, structure is more succinct, reduces technology difficulty.
Brief description of the drawings
Fig. 1 is the plane structure chart of one better embodiment of cell piece of the present invention;
Fig. 2 is the plane structure chart of another better embodiment of cell piece of the present invention;
Fig. 3 is the planar structure schematic diagram using the photovoltaic module of cell piece in Fig. 1;
Fig. 4 is the close-up schematic view of photovoltaic module in Fig. 3;
Fig. 5 is the structure schematic diagram of photovoltaic module in Fig. 3;
Fig. 6 is diagrammatic cross-section of the photovoltaic module along A-A directions in Fig. 5;
Fig. 7 is the planar structure schematic diagram using the photovoltaic module of cell piece in Fig. 2;
Fig. 8 is that power contrast of the photovoltaic module of the present invention from other photovoltaic modulies in different cathode grid line height illustrates Figure;
Fig. 9 is that photovoltaic module of the present invention is illustrated from other photovoltaic modulies using the power contrast of different welding specification conditions Figure;
Figure 10 is the power contrast's schematic diagram of photovoltaic module of the present invention and other photovoltaic modulies in different carefully grid quantity terms;
Figure 11 is power contrast's schematic diagram of photovoltaic module of the present invention and other photovoltaic modulies.
Embodiment
Below with reference to embodiment shown in the drawings, the present invention will be described in detail.But the embodiment is not intended to limit The present invention, structure that those of ordinary skill in the art are made according to the embodiment, method or conversion functionally are wrapped Containing within the scope of the present invention.
With reference to shown in Fig. 1, the cell piece 100 includes silicon chip 10, is arranged at 10 surface of silicon chip and to collect electricity The cathode grid line of stream, the cathode grid line include some main grids 21 and the secondary grid 22 perpendicular to the main grid 21.The main grid 21 Number be arranged to 9 and wherein one main grids 21 and be located on the center line of the silicon chip 10.
The height on relatively described 10 surface of silicon chip of the cathode grid line is arranged to 12~16 μm.The width of the main grid 21 is set 0.1~0.3mm is set to, the width of main grid 21 described herein is preferably 0.2mm.The main grid 21 of neighbouring 10 side of silicon chip and institute The distance for stating 10 respective side edge of silicon chip is less than the spacing of adjacent two main grids 21.Specifically, adjacent two main grids 21 Spacing it is consistent and the spacing of the adjacent main grid 21 is arranged to 16.5~19mm;The main grid 21 of neighbouring 10 side of silicon chip 10~16mm is arranged to the distance of 10 respective side edge of silicon chip.
The cathode grid line is further included along the spaced some pads 23 of the main grid 21.The pad 23 includes neighbouring The first pad 231 and the second pad 232 between first pad 231 of corresponding 21 head and end of main grid, described the One pad 231 is more than the second pad 232.The distance between adjacent described second pad 232 is consistent, and first pad 231 With the spacing for being smaller than adjacent second pad 232 of the second pad 232.Thereby, the main grid 21 is in follow-up welding system It is even more stable with the weldering of welding in journey.Except this, the both ends of the main grid 21 are set in bifurcated, to avoid the neighbouring silicon chip 21 end section of main grid at 10 edges interferes in subsequently welding processing procedure with welding, and then prevents 10 edge of silicon chip from going out Existing hidden rhegma wound or electric leakage.
In the present embodiment, the cell piece 100 is arranged to half chip polycrystalline silicon battery plate, the half chip polysilicon electricity Pond piece is arranged to 150~170mm along the length of 22 extending direction of the secondary grid.First pad 231 and the second pad 232 are equal It is rectangular, and first pad, 231 and second pad 232 is arranged to 1mm along the width of 22 extending direction of the secondary grid, it is described The width of the 231 of first pad along 21 extending direction of main grid is arranged to 1.2mm, and second pad 232 is along 21 side of extension of main grid To width be arranged to 0.7mm.
It is another embodiment of the present invention referring to Fig. 2,100 ' of cell piece is half chip Monocrystalline silicon cell piece, the electricity Piece 100 ' in pond includes 10 ' of silicon chip, 21 ' of main grid for being arranged at 10 ' surfaces of silicon chip, pair 22 ' of grid and is arranged at intervals along 21 ' of main grid 23 ' of some pads.10 ' of silicon chip has 11 ' of first side parallel to 21 ' of main grid, parallel to 22 ' of the secondary grid 12 ' of second side and connection 11 ' of first side and 12 ' of second side bevel edge 13 ', 13 ' of bevel edge along institute State the distance of first side 11 ' of the development length less than 21 ' of main grid and 10 ' of silicon chip of secondary 22 ' extending directions of grid.Its In, the half chip polycrystalline silicon battery plate addressed in above-described embodiment, half chip Monocrystalline silicon cell piece are respectively by corresponding complete electricity Pond piece cuts to obtain along secondary grid 22, the extending direction of 22 '.
Join Fig. 3 to Fig. 6 shown in, the present invention also provides a kind of photovoltaic module 200, if including glass cover-plate 201, backboard 202, The dry battery strings 203 being packaged in EVA adhesive film (not shown), the side set along the periphery of the glass cover-plate 201 and backboard 202 Frame 204.Each battery strings 201 include being sequentially connected in series in integral some cell pieces 100, each electricity by welding 205 100 quantity of cell piece in pond string 203 is arranged to 8~12.The photovoltaic module 200 further includes the different battery strings 203 of connection Busbar 206, the busbar 206 welds the end for being connected in the welding 205.
Herein, 21 extending direction of main grid of some battery strings 203 along the cell piece 100 is arranged to front and rear juxtaposed Two groups, battery strings 203 are symmetrically distributed described in two groups.The photovoltaic module, which further includes, to be arranged between two Battery pack strings 203 Some diodes (not shown), two symmetrical battery strings 203 are connected to the same diode.The photovoltaic module 200 further include to house the terminal box 207 of the diode, and the terminal box 207 is fixedly installed in the outside of backboard 202, And the terminal box 207 is arranged between battery strings 203 described in two groups.
Here, the quantity of battery strings 203 is arranged to 6 strings, the diode and terminal box 207 in each Battery pack string 203 Number be arranged to 3.The diode is corresponded and is contained in different terminal boxes 207, and the terminal box 207 is along horizontal stroke Set to uniform intervals;Battery strings 203 described in same group are transversely arranged in series as three batteries two-by-two by busbar 206 Group, and each battery pack is respectively connected to the different diodes.Transversely it is arranged at two terminal boxes 207 at both ends It is also respectively connected with and is provided with external cable 208, is connected with external circuit.
Preferably, the spacing of the adjacent cell piece 100 is arranged to 0.2~0.25mm in each battery strings 203;Edge The spacing of the adjacent battery strings of 22 extending direction of secondary grid of the cell piece 100 is arranged to 0.25~0.35mm.Also, institute State welding 205 and 0.3~0.45mm is arranged to using circular welding, the diameter of the circle welding.
200 ' of photovoltaic module that another embodiment of the present invention provided, including 203 ' of some battery strings are shown referring to Fig. 7, It is distinguished part and is that 203 ' of battery strings is made by some 100 ' of cell piece series connection.
To further illustrate the opto-electronic conversion performance of cell piece 100,100 ' and the photovoltaic module 200,200 ', by photovoltaic Component 200 carries out performance simulation with other photovoltaic modulies and compares, and herein, other photovoltaic modulies are used with different main grid quantity Cell piece.Join shown in Fig. 8, highly increase with cathode grid line, the transfer efficiency of the photovoltaic module 200 and other photovoltaic modulies is equal Increase, but when cathode grid line is highly more than 12 μm, photovoltaic module 200 of the present invention is showed with better performance.Join Fig. 9 It is shown, using a diameter of 0.35mm or so welding when, the photovoltaic module 200 is opposite to have optimal opto-electronic conversion performance. Join shown in Figure 10, when the secondary grid quantity of cell piece is arranged to 60~65 used by each photovoltaic module, corresponding photovoltaic module The performance of opto-electronic conversion performance is preferable, and photovoltaic module 200 of the present invention is showed with better performance.
As shown in figure 11, power higher of the photovoltaic module 200 compared to other photovoltaic modulies.Wherein, the photovoltaic The cathode grid line of component 200 and other photovoltaic modulies is highly disposed as 14 μm, and welding uses the circle of a diameter of 0.35mm Welding, and 22 quantity of secondary grid of cell piece 100 is arranged to 64 used by photovoltaic module 200, and other photovoltaic modulies are adopted The secondary grid quantity of cell piece is likewise provided as 64.According to above-mentioned comparing result, it will be apparent that, photovoltaic module 200 of the present invention Opto-electronic conversion performance be better than using with different main grid quantity cell piece other photovoltaic modulies.
In conclusion cell piece 100 of the present invention, 100 ' pass through 21 quantity of the overall style to cathode grid line and main grid, knot Structure optimizes, and reduces resistance, increases photoelectric conversion efficiency, while reduces silver paste consumption, reduces cost;Corresponding photovoltaic While component 200,200 ' possess available power gain, structure is more succinct, reduces technology difficulty.
It should be appreciated that although the present specification is described in terms of embodiments, not each embodiment only includes one A independent technical solution, this narrating mode of specification is only that those skilled in the art will should say for clarity For bright book as an entirety, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can With the other embodiment of understanding.
Those listed above is a series of to be described in detail only for feasibility embodiment of the invention specifically Bright, they simultaneously are not used to limit the scope of the invention, all equivalent implementations made without departing from skill spirit of the present invention Or change should all be included in the protection scope of the present invention.

Claims (13)

1. a kind of cell piece, including silicon chip and the cathode grid line for being arranged at the silicon chip surface, the cathode grid line includes some The main grid and the secondary grid perpendicular to the main grid being parallel to each other, it is characterised in that:The relatively described silicon chip surface of cathode grid line Height be arranged to 12~16 μm, and the width of the main grid is arranged to 0.1~0.3mm;The number of the main grid is arranged to 9 And wherein a main grid is located on the center line of the silicon chip.
2. cell piece according to claim 1, it is characterised in that:The main grid of the neighbouring silicon chip side and the silicon chip phase The distance of side is answered to be less than the spacing of adjacent two main grids.
3. cell piece according to claim 2, it is characterised in that:The spacing of the adjacent main grid is arranged to 16.5~ 19mm;The main grid and the distance of the silicon chip respective side edge of the neighbouring silicon chip side are arranged to 10~16mm.
4. cell piece according to claim 1, it is characterised in that:The spacing of adjacent two main grids is consistent.
5. cell piece according to claim 1, it is characterised in that:The silicon chip has the first side parallel to the main grid Side, the second side parallel to the secondary grid and the bevel edge of the connection first side and second side, the bevel edge edge The length of the pair grid extending direction is less than the distance of the main grid and first side.
6. cell piece according to claim 1, it is characterised in that:The cathode grid line is further included to be set along the main grid interval Some pads put.
7. cell piece according to claim 6, it is characterised in that:The pad includes neighbouring corresponding main grid head and end First pad and the second pad between first pad, first pad are more than the second pad.
8. cell piece according to claim 6, it is characterised in that:The pad includes neighbouring corresponding main grid head and end First pad and the second pad between first pad, being smaller than for first pad and the second pad are adjacent The spacing of second pad.
9. cell piece according to claim 1, it is characterised in that:Length of the cell piece along the secondary grid extending direction It is arranged to 150~170mm.
10. a kind of photovoltaic module, including some battery strings, it is characterised in that:The battery strings include some such as claim 1-9 Any one cell piece and by the cell piece be sequentially connected in series in one welding.
11. photovoltaic module according to claim 10, it is characterised in that:Some battery strings are along the main grid extension side Juxtaposed two groups front and rear to being arranged to, battery strings described in two groups are symmetrically distributed, and the photovoltaic module, which further includes, is arranged on two Some diodes between Battery pack string, two symmetrical battery strings are connected to the same diode.
12. photovoltaic module according to claim 10, it is characterised in that:The welding is circular welding, the circular weldering The diameter of band is arranged to 0.3~0.45mm.
13. photovoltaic module according to claim 10, it is characterised in that:The adjacent cell piece in each battery strings Spacing be arranged to 0.2~0.25mm;The spacing of the adjacent battery strings is arranged to 0.25~0.35mm.
CN201711489165.XA 2017-12-29 2017-12-29 Cell piece and photovoltaic module Pending CN108022992A (en)

Priority Applications (1)

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CN201711489165.XA CN108022992A (en) 2017-12-29 2017-12-29 Cell piece and photovoltaic module

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CN201711489165.XA CN108022992A (en) 2017-12-29 2017-12-29 Cell piece and photovoltaic module

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CN108022992A true CN108022992A (en) 2018-05-11

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CN115132877A (en) * 2021-03-24 2022-09-30 苏州阿特斯阳光电力科技有限公司 Photovoltaic module, battery string and manufacturing method thereof

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CN115132877A (en) * 2021-03-24 2022-09-30 苏州阿特斯阳光电力科技有限公司 Photovoltaic module, battery string and manufacturing method thereof
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