CN108010941A - Encapsulating structure and method for light-emitting component - Google Patents
Encapsulating structure and method for light-emitting component Download PDFInfo
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- CN108010941A CN108010941A CN201711129490.5A CN201711129490A CN108010941A CN 108010941 A CN108010941 A CN 108010941A CN 201711129490 A CN201711129490 A CN 201711129490A CN 108010941 A CN108010941 A CN 108010941A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention provides a kind of encapsulating structure and method for light-emitting component.The encapsulating structure includes：TFT substrate, light-emitting component and link enhancement layer, TFT substrate includes substrate body and TFT units, TFT substrate surface matcoveredn and protective layer has opening at each TFT units, light-emitting component is arranged in TFT substrate, including first electrode layer, luminescent layer and the second electrode lay, first electrode layer includes multiple first electrode units, each first electrode unit is electrically connected by opening with the electrode of each TFT units respectively, luminescent layer is electrically connected with each first electrode unit, the second electrode lay that Al or Ag is formed is electrically connected with luminescent layer whole face, link enhancement layer is arranged on substrate surface, its material includes metal oxide, the second electrode lay is connected by link enhancement layer with TFT substrate face seal, with encapsulating light emitting element.The encapsulating structure improves air-tightness.
Description
Technical field
The present invention relates to encapsulation technology field, in particular to a kind of encapsulating structure and method for light-emitting component.
Background technology
With the development of science and technology, electroluminescent device the advantages that its colour gamut is high, uniformity of luminance is good as a new generation to show
Show the visual field that people are come into illuminating product, main the luminescent material such as organic matter or quantum dot in electroluminescent device are easy
Corroded by water and oxygen, influence the service life of final products, therefore, encapsulation technology has for the long-term of electroluminescent device
Effect, which uses, has material impact.
As shown in Figure 1, the encapsulating structure of existing electroluminescent device uses glass or iron plate as rear cover 1 ' more, and adopt
TFT substrate 3 ' and rear cover 1 ' are packaged with UV glue 2 ', air-tightness is poor, and the light-emitting component 4 ' of the light-emitting zone of device still holds
Easily corroded by extraneous water oxygen；The cost for etching rear cover is higher；The thickness of rear cover is thicker (generally 0.4~0.7mm is thick), influences
The thickness of final products.
The content of the invention
It is a primary object of the present invention to provide a kind of encapsulating structure and method for light-emitting component, to solve existing skill
The problem of encapsulating structure air-tightness of electroluminescent device is poor in art.
To achieve these goals, according to an aspect of the invention, there is provided a kind of encapsulation knot for light-emitting component
Structure, including：TFT substrate and light-emitting component, the TFT substrate include substrate body and are formed in multiple in the substrate body
TFT units, the TFT substrate surface have protective layer, and the protective layer of each TFT cell surfaces has opening, described to shine
Element includes patterned first electrode layer, luminescent layer and non-patterned the successively on the direction away from the TFT substrate
Two electrode layers, the patterned first electrode layer include multiple first electrode units mutually separated, each first electrode
Unit is respectively arranged on the TFT units, and is electrically connected by the opening with the electrode of the corresponding TFT units, institute
State luminescent layer to be electrically connected with each first electrode unit, the second electrode lay is electrically connected with the luminescent layer whole face, described
Encapsulating structure further includes link enhancement layer, and the second electrode lay is close by the link enhancement layer and the TFT substrate surface
Envelope connection, to encapsulate the light-emitting component, wherein, the link enhancement layer is arranged on the substrate surface and with described first
Electrode unit is non-electric-connecting, forms the material of the link enhancement layer and includes one or more metal oxides, forms described the
The material of two electrode layers includes Al or Ag.
Further, one or more of the material of the protective layer in silica, silicon nitride and silicon oxynitride,
Form one or more of the material of the link enhancement layer in ITO, IZO, molybdenum oxide, cadmium oxide.
Further, the first electrode layer material is identical with the link enhancement layer material.
Further, each light-emitting component is arranged at the light-emitting zone of the substrate, and the link enhancement layer surrounds institute
Light-emitting zone setting is stated, the thickness of the link enhancement layer is 5~50nm.
Further, the encapsulating structure further includes polymeric layer, and the polymeric layer is arranged on the second electrode lay
Outer surface on.
Further, the thickness of the second electrode lay is 300nm~10 μm.
Further, the second electrode lay includes multiple stacked non-patterned second electrode sublayers, and from described
The farthest second electrode sublayer of substrate is connected with the link enhancement layer, the institute not preferably being connected with the link enhancement layer
Second electrode sublayer is stated to be tightly connected with the substrate surface respectively.
Further, the formation process of the second electrode sublayer for sputtering or is deposited, the second electricity that the sputtering is formed
The side of the remote substrate for the second electrode sublayer that pole sublayer is formed positioned at the evaporation.
Further, the encapsulating structure further includes patterned insulating layer, and the patterned insulating layer is arranged at institute
State on substrate, for separating each first electrode unit.
According to the another aspect of the application, a kind of method for packing of light-emitting component is additionally provided, the light-emitting component includes
First electrode layer, luminescent layer and the second electrode lay, the method for packing include：Prepare TFT substrate, the TFT substrate includes base
Plate body and the multiple TFT units being formed in the substrate body, the TFT substrate surface has protective layer, each TFT
The protective layer of cell surface has opening；First electrode material and link enhancement layer material are set in the TFT substrate, with shape
Into the patterned first electrode layer and link enhancement layer, wherein, the link enhancement layer surrounds patterned described first
Electrode layer, the patterned first electrode layer include multiple first electrode units mutually separated, each first electrode list
Member is electrically connected by the way that the opening is corresponding with the TFT units, the link enhancement layer and each first electrode unit non-electrical
Connection, the link enhancement layer material include one or more metal oxides；It is remote in the patterned first electrode layer
The surface of the substrate sets the luminescent layer, the luminescent layer is electrically connected with each first electrode unit；In the hair
The second electrode lay that material is Al or Ag is set on photosphere and the surface of the link enhancement layer away from the substrate, it is described
The second electrode lay is connected by the link enhancement layer with the TFT substrate face seal, to encapsulate the light-emitting component.
Further, one or more of the material of the protective layer in silica, silicon nitride and silicon oxynitride,
One or more of the link enhancement layer material in ITO, IZO, molybdenum oxide, cadmium oxide, and the first electrode material
It is identical with the link enhancement layer material, wherein, first electrode material and link enhancement layer material are set in the TFT substrate
The step of include：The raw material of the material, the material that partial etching is formed, with shape are sputtered on the TFT substrate surface
Into patterned first electrode layer and link enhancement layer.
Further, the second electrode lay includes multiple second electrode sublayers, the step of setting the second electrode lay
Including：In the luminescent layer and optional link enhancement layer surface evaporating Al or Ag, initial second electrode sublayer is formed；Described
Al or Ag is sputtered on the surface of initial second electrode sublayer and at least partly described link enhancement layer, to form the second electrode
Layer.
Apply the technical scheme of the present invention, there is provided a kind of encapsulating structure and method for light-emitting component, due to Al or
The second electrode lay that Ag is formed is tightly connected by link enhancement layer and substrate surface, i.e., the second electrode lay is except there is electrode work(
Can, there is the effect of encapsulating light emitting element, such encapsulating structure is simple and practicable, reduces the technology difficulty of encapsulation；On also,
State link enhancement layer to set on the surface of the substrate, add the surface tension of substrate surface, enhance the second electrode lay and substrate
The adhesion of the sealed connection on surface, the encapsulating structure phase with encapsulating rear cover by UV gluing knots glass or iron plate in the prior art
Than avoiding the phenomenon that encapsulation rear cover easily comes off from the substrate surface with protective film, solving electroluminescent hair in the prior art
The problem of encapsulating structure air-tightness of optical device is poor, realizes the effect of the air-tightness of lifting encapsulating structure.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is described in further detail.
Brief description of the drawings
The Figure of description for forming the part of the present invention is used for providing a further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation are used to explain the present invention, do not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 shows a kind of schematic diagram of the encapsulating structure for optional electroluminescent device that the prior art is provided；
Fig. 2 shows a kind of schematic diagram of encapsulating structure optionally with light-emitting component provided by the present invention；
Fig. 3 shows a kind of schematic diagram of encapsulating structure for being preferably used in light-emitting component provided by the present invention；
Fig. 4 shows that another kind provided by the present invention is preferably used in the schematic diagram of the encapsulating structure of light-emitting component；
Fig. 5 show it is provided by the present invention another be preferably used in light-emitting component encapsulating structure schematic diagram；With
And
Fig. 6 shows a kind of flow diagram of the method for packing of optional light-emitting component provided by the present invention.
Wherein, above-mentioned attached drawing is marked including the following drawings：
1 ', rear cover；2 ', UV glue；3 ', TFT substrate；4 ', light-emitting component；2nd, link enhancement layer；31, substrate body；32、
TFT units；33rd, protective layer；411st, first electrode unit；42nd, luminescent layer；43rd, the second electrode lay；431st, second electrode sublayer；
5th, polymeric layer；6th, insulating layer.
Embodiment
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.Below with reference to the accompanying drawings and the present invention will be described in detail in conjunction with the embodiments.
In order to make those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Attached drawing, is clearly and completely described the technical solution in the embodiment of the present invention, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's all other embodiments obtained without making creative work, should all belong to the model that the present invention protects
Enclose.
It should be noted that term " first " in description and claims of this specification and above-mentioned attached drawing, "
Two " etc. be for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so use
Data can exchange in the appropriate case, so as to the embodiment of the present invention described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps clearly listed or unit, but may include without clear
It is listing to Chu or for the intrinsic other steps of these processes, method, product or equipment or unit.
As described in background technology, the encapsulation rear cover of glass or iron plate is sticked at by base using UV glue in the prior art
On plate, to encapsulate electroluminescent device, but the encapsulation rear cover easily comes off.In order to solve the electroluminescent used in the prior art
The problem of encapsulating structure air-tightness of device is poor.Present inventor is studied regarding to the issue above, it is proposed that a kind of
For the encapsulating structure and method of light-emitting component, as shown in Figures 2 to 5, which includes：TFT
Substrate, light-emitting component and link enhancement layer 2, wherein：
Above-mentioned TFT substrate includes substrate body 31 and the multiple TFT units 32 being formed in substrate body 31, above-mentioned TFT
Substrate surface has protective layer 33, and the protective layer 33 on each 32 surface of TFT units has opening,
Light-emitting component includes successively on the direction away from TFT substrate：Patterned first electrode layer, luminescent layer 42 and non-
Patterned the second electrode lay 43, above-mentioned patterned first electrode layer include multiple first electrode units 411 mutually separated,
Each first electrode unit 411 is respectively arranged on TFT units 32, and is electrically connected by opening with the electrode of corresponding TFT units 32
Connect, above-mentioned luminescent layer 42 is electrically connected with each first electrode unit 411, and above-mentioned the second electrode lay 43 is electrically connected with 42 whole face of luminescent layer
Connect,
Above-mentioned encapsulating structure further includes link enhancement layer 2, and above-mentioned the second electrode lay 43 passes through link enhancement layer 2 and TFT bases
Plate surface is tightly connected, to encapsulate above-mentioned light-emitting component, wherein, link enhancement layer 2 is arranged on aforesaid substrate surface and with the
One electrode unit 411 is non-electric-connecting, and forming the material of above-mentioned link enhancement layer 2 includes one or more metal oxides, is formed
The material of the second electrode lay 43 includes Al or Ag.
Apply the technical scheme of the present invention, since the Al or Ag the second electrode lays 43 formed pass through link enhancement layer 2 and base
Plate surface is tightly connected, i.e., the second electrode lay 43 is except there is electrode function, the effect for also having encapsulating light emitting element, such encapsulation
It is simple for structure, cleaning, the drying of rear cover in existing encapsulating structure are eliminated, the process such as UV glue, pressing UV glue is applied, reduces
The technology difficulty of encapsulation；Also, above-mentioned link enhancement layer 2 sets the surface tension on the surface of the substrate, adding substrate surface,
Enhance the adhesion of the sealed connection of the second electrode lay 43 and substrate surface, with the prior art by UV gluing knots glass or
The encapsulating structure of iron plate encapsulation rear cover is compared, and avoids encapsulation showing of easily coming off from the substrate surface with protective film of rear cover
As solving the problems, such as that the encapsulating structure air-tightness of electroluminescent device in the prior art is poor, realizing lifting encapsulating structure
Air-tightness effect.
Substrate body in above-mentioned TFT substrate can be rigidity or flexible, and in certain embodiments, rigid substrates body is for example
It is quartz base plate, glass substrate, metal substrate, but it's not limited to that；Flexible base board body is, for example, glass film substrate, no
Become rusty steel film substrate or plastic base, and the material of plastic base can be polyimide (polyimide, PI), poly- terephthaldehyde
Sour second diester (polyethylene terephthalate, PET), polyethers sulphur (polyethersulfone, PES) or poly- carbon
Acid esters (polycarbonate, PC) etc..
Rear cover is encapsulated compared to existing iron plate, above-mentioned encapsulating structure can be applicable to flexible package, applied widely；
Compared to existing glass-encapsulated rear cover, above-mentioned encapsulating structure does not have to etching technics, and technique is simple；In addition, the second electrode lay doubles as
Rear cover is encapsulated, relatively existing encapsulating structure, reduces the thickness of rear cover, so as to reduce the gross thickness after encapsulation.
Above-mentioned luminescent layer 42 can be patterned with right and wrong, as shown in Figures 2 to 4；Can also be it is patterned, as shown in Figure 5.
It is preferred embodiment that the manufacture craft of luminescent layer 42, which can be selected from heat steaming, printing or spin coating, first two, naturally it is also possible to is other systems
Make technique.
As shown in figure 5, light-emitting component in addition to including two electrode layers and luminescent layer 42, can also include being arranged on electrode
Functional layer between layer and luminescent layer 42, such as, the hole injection being arranged between each first electrode unit 411 and luminescent layer 42
Layer 424 and hole transmission layer 423, electron transfer layer 422 and the electronics being arranged between second electrode sublayer 431 and luminescent layer 42
Implanted layer 421, so can aid in hole and electric transmission and the injection balance of light-emitting component, improve luminous efficiency.It is above-mentioned
Functional layer is not limited to as shown in Figure 5 several, may also include the functional layer of other functions, those skilled in the art can basis
Realize the different needs of function, selection sets corresponding functional layer.
In some preferred embodiments, the material of above-mentioned protective layer 33 is selected from silica, silicon nitride and silicon oxynitride
In one or more, form the one kind or more of the material of above-mentioned link enhancement layer 2 in ITO, IZO, molybdenum oxide, cadmium oxide
Kind.
Above-mentioned protective layer material is not limited to the above-mentioned material included, can also be for protecting TFT substrate from invading
Other protective layer materials of the damages such as erosion.Using above-mentioned 33 material of protective layer and the material of corresponding link enhancement layer 2, Ke Yiyou
Effect ground strengthens adhesion of the substrate surface to the second electrode lay 43, and above-mentioned material is simple and easy to get, and practicality is higher.
In a preferred embodiment, above-mentioned first electrode layer material is identical with above-mentioned link enhancement layer material, so
First electrode layer and link enhancement layer can be prepared at the same time, are simplified technological process, have been saved production cost.
In order to introduce the setting position of link enhancement layer, light-emitting zone is first introduced, the region of substrate is where light-emitting component
Light-emitting zone, i.e., each above-mentioned light-emitting component are arranged at the light-emitting zone of aforesaid substrate, then above-mentioned link enhancement layer can surround
Above-mentioned light-emitting zone is set.
Alternatively, the thickness of above-mentioned link enhancement layer is 5~50nm, using relatively thin thickness, can use less material
Realize the effect preferably to increase adherence.
In order to further improve packaging effect, as shown in Figures 2 to 5, above-mentioned encapsulating structure can also include polymeric layer
5, above-mentioned polymeric layer 5 is arranged on the outer surface of above-mentioned the second electrode lay 43, and polymeric layer 5 can play protection second electrode
Layer 43, strengthens the effect of its wearability.It is preferred that the material of the polymeric layer 5 is epoxy resin, can be realized using the material resistance to
It is mill, buffering, flexible extending and other effects.
In the above-described embodiments, the thickness of the second electrode lay can be 300nm~10 μm, using the second of the thickness range
Electrode layer can play good encapsulation performance, and thickness of electrode is more thick better, it is ensured that packaging air tightness, takes into account production efficiency.
Above-mentioned the second electrode lay can be independent one layer, or sandwich construction.
In some optional embodiments, as shown in Figure 2-5, the second electrode lay can include multiple stacked non-patterned
Second electrode sublayer 431, and the above-mentioned second electrode sublayer 431 farthest from aforesaid substrate is connected with link enhancement layer 2, changes speech
It, is to pass through connection positioned at outermost second electrode sublayer 431 in multiple second electrode sublayers 431 of the second electrode lay 43
What enhancement layer 2 was connected with TFT substrate, and other second electrode sublayers 431 for being located at internal layer can pass through link enhancement layer 2 and base
Plate connects (such as Fig. 2 and 3), can not also be by link enhancement layer 2 directly with substrate connection (such as Figure 4 and 5), can not also be with base
Plate is tightly connected.Different second electrode sublayers 431 can correspond to different packaging technologies and/or material.
By above-mentioned optional embodiment, since outermost second electrode sublayer 431 plays main encapsulation effect, and
It is connected by link enhancement layer 2 with substrate surface, so can be with encapsulation of the basic guarantee the second electrode lay 43 to luminescent layer 42
Effect, meanwhile, the setting of the second electrode lay 43 of sandwich construction can also meet different sealing needs and electrode conductivuty
It is required that.
In above-mentioned optional embodiment, encapsulating structure as shown in Figures 4 and 5 be it is more preferable, i.e., not with above-mentioned company
Connecing the above-mentioned second electrode sublayer 431 of the connection of enhancement layer 2 can be connected with aforesaid substrate face seal respectively, can so meet
The basic effect for stopping extraneous water oxygen, makes luminescent layer 42 be corroded from water oxygen.Encapsulating structure as shown in Figures 2 and 3 is more excellent
Choosing, i.e., all second electrode sublayers 431 of the second electrode lay 43 are tightly connected by link enhancement layer 2 and substrate surface,
Such packaging effect is optimal.
The formation process of above-mentioned second electrode sublayer 431 is sputtering or evaporation, the second electrode sublayer that above-mentioned sputtering is formed
The side of the remote aforesaid substrate of the 431 second electrode sublayers 431 formed positioned at above-mentioned evaporation.Sputter second electrode prepared
The air-tightness of layer 431 is preferable, and damage of the evaporation process to film layer is smaller, and using internal layer evaporation, the technique of outer layer sputtering is prepared each
Second electrode sublayer 431, the advantages of can playing two kinds of technique, lift the packaging effect of encapsulating structure.
As shown in figure 5, in order to preferably separate each first electrode unit 411 in encapsulating structure, above-mentioned encapsulating structure is also
It can include patterned insulating layer 6, above-mentioned patterned insulating layer 6 is arranged on aforesaid substrate, consequently facilitating being formed multiple
First electrode unit 411 that is separate and being separated, is also convenient for the making of follow-up each film layer.
According to another aspect of the present invention, a kind of method for packing of light-emitting component is additionally provided, above-mentioned light-emitting component includes
First electrode layer, luminescent layer and the second electrode lay, as shown in fig. 6, above-mentioned method for packing includes the following steps：
S101, prepares TFT substrate, and multiple TFT that above-mentioned TFT substrate includes substrate body and is formed in substrate body are mono-
Member, TFT substrate surface have protective layer, and the protective layer of each above-mentioned TFT cell surfaces has opening；
S103, sets first electrode material and link enhancement layer material on the tft substrate, to form patterned first electricity
Pole layer and link enhancement layer, wherein, above-mentioned link enhancement layer surrounds patterned above-mentioned first electrode layer, and patterned above-mentioned the
One electrode layer includes multiple first electrode units mutually separated, each above-mentioned first electrode unit by above-mentioned opening with it is above-mentioned
TFT units, which correspond to, to be electrically connected, and above-mentioned link enhancement layer and each above-mentioned first electrode unit are non-electric-connecting, above-mentioned link enhancement layer material
Material includes one or more metal oxides；
S105, sets luminescent layer on surface of the patterned first electrode layer away from substrate, makes luminescent layer and each first electricity
Pole unit is electrically connected；
S107, sets the second electrode that material is Al or Ag on the surface of luminescent layer and link enhancement layer away from substrate
Layer, the second electrode lay is connected by link enhancement layer with TFT substrate face seal, with encapsulating light emitting element.
Using above-mentioned method for packing, since the Al or Ag the second electrode lays 43 formed pass through link enhancement layer 2 and substrate table
Face is tightly connected, i.e., the second electrode lay 43 is except there is electrode function, the effect for also having encapsulating light emitting element, such encapsulating structure
It is simple and practicable, cleaning, the drying of rear cover in existing encapsulating structure are eliminated, the process such as UV glue, pressing UV glue is applied, reduces encapsulation
Technology difficulty；Also, above-mentioned link enhancement layer 2 is arranged on substrate surface, adds the surface tension of substrate surface, enhances
The second electrode lay 43 and the adhesion of the sealed connection of substrate surface, with being sealed in the prior art by UV gluing knots glass or iron plate
The encapsulating structure of dress rear cover is compared, and is avoided the phenomenon that encapsulation rear cover easily comes off from the substrate surface with protective film, is solved
The problem of encapsulating structure air-tightness of electroluminescent device is poor in the prior art, realizes the air-tightness of lifting encapsulating structure
Effect.
In a kind of optional embodiment, the material of above-mentioned protective layer is selected from silica, silicon nitride and silicon oxynitride
In one or more, one or more of the above-mentioned link enhancement layer material in ITO, IZO, molybdenum oxide, cadmium oxide, and on
It is identical with above-mentioned link enhancement layer material to state first electrode material, wherein, above-mentioned steps S103, i.e., set in above-mentioned TFT substrate
First electrode material and link enhancement layer material are put, including：The raw material of above-mentioned material, portion are sputtered on above-mentioned TFT substrate surface
The above-mentioned material for dividing etching to be formed, to form patterned first electrode layer and link enhancement layer.
By above-mentioned optional embodiment, first electrode layer and link enhancement layer can be prepared at the same time, simplifies technique
Flow, has saved production cost.
By taking ITO as an example, general whole face sputters ITO in the prior art, then etches away whole ITO of TFT units periphery, with
First electrode layer is formed on the corresponding light-emitting zone of TFT units；And the above-mentioned method for packing of the application is used, it can be splashed in whole face
Penetrate after ITO, it is not necessary to etch away whole ITO of non-luminous region, link enhancement can be formed in the part ITO of non-luminous region
Layer, first electrode layer can be formed in the part ITO of light-emitting zone；Compared with prior art, above-mentioned method for packing reduces quarter
Region is lost, technique is simplified and also saves material, material is retained to increase the surface energy of substrate surface, follow-up second electricity of increase
The adhesion of pole layer and substrate surface protective layer, so as to improve the sealing effect of encapsulating structure.
Above-mentioned the second electrode lay can include multiple second electrode sublayers, set the step S107 bags of above-mentioned the second electrode lay
Include：In above-mentioned luminescent layer and optional link enhancement layer surface evaporating Al or Ag, initial second electrode sublayer is formed；Above-mentioned first
Al or Ag is sputtered on the surface of beginning second electrode sublayer and at least partly above-mentioned link enhancement layer, to form above-mentioned second electrode
Layer.
The formation process of above-mentioned second electrode sublayer is selected from sputtering or evaporation, the second electrode sublayer position that above-mentioned sputtering is formed
In the side of the remote aforesaid substrate for the second electrode sublayer that above-mentioned evaporation is formed.Sputter the airtight of the second electrode sublayer of preparation
Property it is preferable, damage of the evaporation process to film layer is smaller, and using internal layer evaporation, it is sub to prepare each second electrode for the technique of outer layer sputtering
Layer, the advantages of can playing two kinds of technique, lift the packaging effect of encapsulating structure.
With reference to embodiment and comparative example further illustrate the application provide for light-emitting component encapsulating structure and
Method.
Embodiment 1
As shown in figure 4, preparing TFT substrate, this TFT substrate has made 32 He of TFT units on glass substrate body 31
Silica or silicon nitride protective layer 33, thickness 20nm, and protective layer 33 has etched ITO via holes or opening, then uses
The method of wet method photoetching corresponds on protective layer 33 and produces sub-pixel photoresist insulating layer 6, photoresist directly over TFT units 32
Thickness 0.8um, and transparent conductive film is sputtered on TFT substrate side photomask surface glue insulating layer 6 and on protective layer 33,
Thickness 35nm, etches ITO, retains the ITO in edge seal area and the corresponding TFT substrate of subpixel area, respectively the company of being formed
Enhancement layer 2 and first electrode unit 411 are connect, wherein, light-emitting zone includes subpixel area, and edge seal area surrounds luminous zone
Domain；Luminescent layer 42 is set on the ITO surfaces of subpixel area, 42 structure of luminescent layer is NPB/ALq/LiF, and thickness is respectively
80nm/40nm/1nm；In the case where mask plate (open mask) blocks, the aluminium film of vacuum thermal evaporation 100nm is formed on luminescent layer 42
Second electrode sublayer 431, then again under the blocking of mask plate, the aluminium film for sputtering 500nm forms the second electrode for being located at outer layer
Sublayer 431, the aluminium film surrounding are sputtered on ITO link enhancements layer 2, which forms a sealing space, hair with TFT substrate
Photosphere 42 and the ITO first electrodes unit 411 of subpixel area are located in the encapsulated space.It is coated with aluminium the second electrode lay 43
Last layer epoxy resin film UV cured films, form polymeric layer 5, and thickness is 20 μm.
Comparative example：
Prepare TFT substrate, TFT units 32 and silica are made on glass substrate body 31 in this TFT substrate
Or silicon nitride protective layer 33, thickness 20nm, and protective layer 33 has etched ITO via holes, then using the method for wet method photoetching
Corresponded on protective layer 33 and sub-pixel photoresist insulating layer 6 is produced directly over TFT units 32, photoresist thickness 0.8um, and
Transparent conductive film, thickness 35nm, etching are sputtered on TFT substrate side photomask surface glue insulating layer 6 and on protective layer 33
ITO, retains the ITO in the corresponding TFT substrate of subpixel area, forms first electrode unit 411；In the ITO of subpixel area
Surface sets luminescent layer 42, and luminous layer structure NPB/ALq/LiF, thickness is respectively 80nm/40nm/1nm；In mask plate
(open mask) is blocked down, and the aluminium film of vacuum thermal evaporation 150nm forms the second electrode lay on luminescent layer 42, then, coats UV
Packaging plastic, is stained with rear cover glass, and rear cover glass and UV UV curing glue, packaged rear cover glass, UV glue and TFT bases are pressed under low pressure
To form a sealing space, the ITO first electrodes unit of luminescent layer 42 and subpixel area is located in the encapsulated space plate.
Measure of merit is packaged to the encapsulating structure in above-described embodiment and comparative example, encapsulating structure is placed on identical
Observed and recorded under test condition (60 DEG C of temperature and 80% humidity).
After tested, the encapsulating structure that the normal packaging technology in comparative example is formed：306 it is small when post package edge pixels occur
Pore；And the encapsulating structure in the embodiment of the present application 1：455 it is small when after pixel rim there is pore.
Contrasted from above two encapsulating structure, the encapsulating structure in embodiment 1 has light-emitting component preferable envelope
Effect is filled, it is higher to be embodied in its air-tightness, not easily to fall off, stability is preferable.
Using the above-mentioned encapsulating structure and method for light-emitting component of the application, the second electrode lay formed due to Al or Ag
It is tightly connected by link enhancement layer and substrate surface, i.e., the second electrode lay also has encapsulating light emitting element except there is electrode function
Effect, such encapsulating structure is simple and practicable, eliminate rear cover in existing encapsulating structure cleaning, drying, apply UV glue, pressing
The processes such as UV glue, reduce the technology difficulty of encapsulation；Also, above-mentioned link enhancement layer is set on the surface of the substrate, adds base
The surface tension of plate surface, enhances the adhesion of the sealed connection of the second electrode lay and substrate surface, with leading in the prior art
The encapsulating structure for crossing UV gluing knots glass or iron plate encapsulation rear cover is compared, and avoids encapsulation rear cover easily from the substrate with protective film
The phenomenon to come off on surface, solves the problems, such as that the encapsulating structure air-tightness of electroluminescent device in the prior art is poor, realizes
The effect of the air-tightness of lifting encapsulating structure.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this area
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.
Claims (12)
1. a kind of encapsulating structure for light-emitting component, including：TFT substrate and light-emitting component, the TFT substrate include substrate sheet
Body and the multiple TFT units being formed in the substrate body, the TFT substrate surface has protective layer, each TFT units
The protective layer on surface has an opening, and the light-emitting component includes patterned the successively on the direction away from the TFT substrate
One electrode layer, luminescent layer and non-patterned the second electrode lay, the patterned first electrode layer include multiple mutually separations
First electrode unit, each first electrode unit is respectively arranged on the TFT units, and by the opening with it is corresponding
The electrodes of the TFT units be electrically connected, the luminescent layer is electrically connected with each first electrode unit, the second electrode lay
It is electrically connected with the luminescent layer whole face, it is characterised in that
The encapsulating structure further includes link enhancement layer, and the second electrode lay passes through the link enhancement layer and the TFT bases
Plate surface be tightly connected, to encapsulate the light-emitting component, wherein, the link enhancement layer be arranged on the substrate surface and with
The first electrode unit is non-electric-connecting, and forming the material of the link enhancement layer includes one or more metal oxides, shape
Material into the second electrode lay includes Al or Ag.
2. encapsulating structure according to claim 1, it is characterised in that the material of the protective layer is selected from silica, nitrogen
One or more in SiClx and silicon oxynitride, the material for forming the link enhancement layer are selected from ITO, IZO, molybdenum oxide, oxidation
One or more in cadmium.
3. encapsulating structure according to claim 2, it is characterised in that the first electrode layer material and the link enhancement
Layer material is identical.
4. encapsulating structure according to claim 1, it is characterised in that each light-emitting component is arranged at the hair of the substrate
Light region, the link enhancement layer surround the light-emitting zone and set, and the thickness of the link enhancement layer is 5~50nm.
5. encapsulating structure according to claim 1, it is characterised in that the encapsulating structure further includes polymeric layer, described
Polymeric layer is arranged on the outer surface of the second electrode lay.
6. encapsulating structure according to claim 1, it is characterised in that the thickness of the second electrode lay is the μ of 300nm~10
m。
7. encapsulating structure according to claim 1, it is characterised in that the second electrode lay includes multiple stacked non-figures
The second electrode sublayer of case, and the second electrode sublayer farthest from the substrate is connected with the link enhancement layer, it is excellent
The second electrode sublayer not being connected with the link enhancement layer is selected to be tightly connected respectively with the substrate surface.
8. encapsulating structure according to claim 7, it is characterised in that the formation process of the second electrode sublayer is sputtering
Or evaporation, the remote substrate for the second electrode sublayer that the second electrode sublayer that the sputtering is formed is formed positioned at the evaporation
Side.
9. encapsulating structure according to claim 1, it is characterised in that the encapsulating structure further includes patterned insulation
Layer, the patterned insulating layer is arranged on the substrate, for separating each first electrode unit.
10. a kind of method for packing of light-emitting component, the light-emitting component includes first electrode layer, luminescent layer and the second electrode lay,
It is characterized in that, the method for packing includes：
Prepare TFT substrate, the TFT substrate includes substrate body and the multiple TFT units being formed in the substrate body, institute
Stating TFT substrate surface has protective layer, and the protective layer of each TFT cell surfaces has opening；
First electrode material and link enhancement layer material are set in the TFT substrate, to form patterned first electricity
Pole layer and link enhancement layer, wherein, the link enhancement layer surrounds the patterned first electrode layer, and patterned described the
One electrode layer includes multiple first electrode units mutually separated, each first electrode unit by the opening with it is described
TFT units, which correspond to, to be electrically connected, and the link enhancement layer and each first electrode unit are non-electric-connecting, the link enhancement layer material
Material includes one or more metal oxides；
On surface of the patterned first electrode layer away from the substrate, the luminescent layer is set, make the luminescent layer with it is each
The first electrode unit is electrically connected；
Described that material is Al or Ag is set on the luminescent layer and the surface of the link enhancement layer away from the substrate
Two electrode layers, the second electrode lay is connected by the link enhancement layer with the TFT substrate face seal, with described in encapsulation
Light-emitting component.
11. method for packing according to claim 10, it is characterised in that the material of the protective layer be selected from silica,
One or more in silicon nitride and silicon oxynitride, the link enhancement layer material is in ITO, IZO, molybdenum oxide, cadmium oxide
One or more, and the first electrode material is identical with the link enhancement layer material, wherein, in the TFT substrate
The step of setting first electrode material and link enhancement layer material includes：
The raw material of the material, the material that partial etching is formed, to form the figure are sputtered on the TFT substrate surface
The first electrode layer of case and the link enhancement layer.
12. the method for packing according to claim 10 or 11, it is characterised in that the second electrode lay includes multiple second
Electrode sublayer, the step of setting the second electrode lay, include：It is deposited in the luminescent layer and optional link enhancement layer surface
Al or Ag, forms initial second electrode sublayer；In the initial second electrode sublayer and at least partly described link enhancement layer
Al or Ag is sputtered on surface, to form the second electrode lay.
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