CN108002746A - A kind of preparation method of NTC thermistor material - Google Patents
A kind of preparation method of NTC thermistor material Download PDFInfo
- Publication number
- CN108002746A CN108002746A CN201711186123.9A CN201711186123A CN108002746A CN 108002746 A CN108002746 A CN 108002746A CN 201711186123 A CN201711186123 A CN 201711186123A CN 108002746 A CN108002746 A CN 108002746A
- Authority
- CN
- China
- Prior art keywords
- temperature
- activated carbon
- deionized water
- dispensing
- silicon nanowires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000011231 conductive filler Substances 0.000 claims abstract description 12
- 239000002086 nanomaterial Substances 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 20
- 239000002070 nanowire Substances 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 12
- 235000019270 ammonium chloride Nutrition 0.000 claims description 10
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims description 10
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 9
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 239000008188 pellet Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 239000004246 zinc acetate Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229920001903 high density polyethylene Polymers 0.000 claims description 6
- 239000004700 high-density polyethylene Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 4
- 229960000583 acetic acid Drugs 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 239000011852 carbon nanoparticle Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 4
- 238000005453 pelletization Methods 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- 239000006227 byproduct Substances 0.000 abstract description 2
- 239000000945 filler Substances 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 2
- DBJUEJCZPKMDPA-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O DBJUEJCZPKMDPA-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000004153 renaturation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B26/00—Compositions of mortars, concrete or artificial stone, containing only organic binders, e.g. polymer or resin concrete
- C04B26/02—Macromolecular compounds
- C04B26/04—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B26/045—Polyalkenes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B26/00—Compositions of mortars, concrete or artificial stone, containing only organic binders, e.g. polymer or resin concrete
- C04B26/02—Macromolecular compounds
- C04B26/04—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B26/08—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing halogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/049—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of organic or organo-metal substances
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a kind of preparation method of NTC thermistor material, the performance of NTC thermistor element prepared by products obtained therefrom of the present invention stablizes high, reliability height, the thermistor has activated carbon supported silicon nano material prepared by special process as conductive filler, while the electric conductivity of thermistor is strengthened, there is stronger interaction also between high molecular polymer, non-conducting filler, the service life of thermistor is improved.
Description
Technical field
The present invention relates to resistance material manufacturing field, and in particular to a kind of preparation method of NTC thermistor material.
Background technology
Thermal resistor is a kind of sensitivity member that is temperature sensitive, showing different resistance values at different temperature
Part, is divided into positive temperature coefficient thermistor (PTC) and negative temperature coefficient thermistor (NTC) according to temperature coefficient difference.
Wherein negative temperature coefficient thermistor (NTC) is the semiconductor material that a kind of resistance value increases and reduces with temperature
Material, has the effects such as thermometric, temperature control, temperature-compensating, suppression surge.In room temperature NTC themistor, mainly using transition metal
Manganese, nickel, cobalt, iron, copper oxide made of spinel structure NTC thermistor element, they obtained it is extensive research with
Using.
Using spinel structure NTC thermistor material made of the oxide of transition metal manganese, nickel, cobalt, iron, copper
In, because the volatilization temperature of these transition metal oxides is relatively low, hold in the preparation sintering process of this kind of NTC thermistor element
It is also easy to produce the volatilization of composition of raw material so that the weight between the ultimate constituent of product, the uniformity of product and production different batches
Renaturation is difficult to control.
The content of the invention
The present invention provides a kind of preparation method of NTC thermistor material, NTC temperature-sensitives electricity prepared by products obtained therefrom of the present invention
The performance of resistance element stablizes high, reliability height, and the thermistor has activated carbon supported silicon nanometer material prepared by special process
Material is used as conductive filler, while the electric conductivity of thermistor is strengthened, also between high molecular polymer, non-conducting filler
There is stronger interaction, the service life of thermistor is improved.
To achieve these goals, the present invention provides a kind of preparation method of NTC thermistor material, this method to include
Following steps：
（1）Prepare Ni-based resistance material
By molecular formula Ni1-xZnxO1-yClyCarry out dispensing, wherein x=0.01-0.03, y=0.005-0.01, initial raw materials choosing
From basic nickel carbonate, ammonium chloride and zinc acetate；
Initial feed is pressed into Ni1-xZnxO1-yClyDispensing, weighs basic nickel carbonate, ammonium chloride and zinc acetate；
The raw material weighed by dissolve respectively, and basic nickel carbonate is dissolved in dust technology, and ammonium hydroxide is then added dropwise and adjusts pH value to 8-9；
Ammonium chloride and zinc acetate are dissolved in deionized water respectively；
By dissolved three kinds of solution mix, and be uniformly mixed using magnetic agitation heater, heat drying；
Powder made from previous step is calcined, temperature is 880-950 DEG C, when insulation 4-5 is small, obtains Ni-based resistance material
Material；
（2）Prepare activated carbon supported silicon nano material conductive filler
Small porcelain boat equipped with nanometer silicon monoxide powder is placed horizontally among alumina tube, the pipe is then placed on high temperature pipe
In formula stove, vacuumize in 20-50Pa, then keep the temperature 900-1000 DEG C of temperature and respectively 60-80min, be warming up to 1300- afterwards
1400 DEG C of insulation 4-6h；500-600 DEG C is cooled to the speed of 10-15 DEG C/min and keep the temperature 30-40min afterwards, while with
60sccm blasts air to furnace chamber, and cooled to room temperature, obtains silicon nanowires, spare；
Silane coupling agent is added to deionized water, and with vinegar acid for adjusting pH to 3.5,30-50min is stirred at room temperature, afterwards
The silicon nanowires is added, in 85-95 DEG C of back flow reaction 15-20h, filters, wash, is dry, the silicon nanowires after being coupled
Compound；
Silicon nanowires compound, active carbon nanoparticles after obtained coupling are added to deionized water, with ultrasonic wave 45 DEG C,
30-50min is mixed under conditions of 150W, at room temperature static aging 30-40h, in being cleaned with deionized water and being in efflux repeatedly
Property, 120-150 DEG C of drying 15-20h is to constant weight, cooling, dry then when 350-400 DEG C of roasting 3-5 is small, is made activated carbon supported
Silicon nanowires, ball mill grinding obtain activated carbon supported silicon nano material conductive filler；
（3）According to following parts by weight dispensing:
42-51 parts of high molecular polymer
Above-mentioned 2-3.5 parts of activated carbon supported silicon nano material conductive filler
Above-mentioned Ni-based resistance material 22-27 parts；
（4）It is uniformly mixed by above-mentioned dispensing；Then extruding pelletization, obtains pellet；The pellet carries out to hot pressing is compound to obtain
To NTC thermistor material.
Preferably, the high molecular polymer is high density polyethylene (HDPE), polypropylene（PP), Kynoar, poly- inclined chloroethene
At least one of alkene.
Embodiment
Embodiment one
By molecular formula Ni0.99Zn0.01O0.995Cl0.005Dispensing is carried out, initial raw materials are selected from basic nickel carbonate, ammonium chloride and acetic acid
Zinc.
The raw material weighed by dissolve respectively, and basic nickel carbonate is dissolved in dust technology, then be added dropwise ammonium hydroxide adjust pH value to
8-9；Ammonium chloride and zinc acetate are dissolved in deionized water respectively；By dissolved three kinds of solution mix, and utilize magnetic force
Agitating and heating device is uniformly mixed, heat drying；Powder made from previous step is calcined, temperature is 880 DEG C, insulation
4 it is small when, obtain Ni-based resistance material.
Small porcelain boat equipped with nanometer silicon monoxide powder is placed horizontally among alumina tube, the pipe is then placed on height
In warm tube furnace, vacuumize in 20Pa, then keep the temperature 900 DEG C of temperature and respectively 60min, be warming up to 1300 DEG C of insulations afterwards
4h；500 DEG C are cooled to the speed of 10 DEG C/min afterwards and keep the temperature 30min, while air is blasted to furnace chamber with 60sccm, it is natural
It is cooled to room temperature, obtains silicon nanowires, it is spare.
Silane coupling agent is added to deionized water, and with vinegar acid for adjusting pH to 3.5,30min is stirred at room temperature, afterwards
The silicon nanowires is added, in 85 DEG C of back flow reaction 15-20h, filters, wash, is dry, the silicon nanowires after being coupled is compound
Thing.
Silicon nanowires compound, active carbon nanoparticles after obtained coupling are added to deionized water, with ultrasonic wave 45
DEG C, mix 30min under conditions of 150W, static aging 30h, is cleaned with deionized water and is repeatedly in neutrality to efflux at room temperature,
120 DEG C of drying 15h are to constant weight, cooling, dry then when 350 DEG C of roastings 3 are small, and activated carbon supported silicon nanowires, ball mill grinding is made
Obtain activated carbon supported silicon nano material conductive filler.
According to following parts by weight dispensing:
42 parts of high molecular polymer
Above-mentioned 2 parts of activated carbon supported silicon nano material conductive filler
Above-mentioned 22 parts of Ni-based resistance material.
Preferably, the high molecular polymer is high density polyethylene (HDPE).
It is uniformly mixed by above-mentioned dispensing；Then extruding pelletization, obtains pellet；The pellet carries out to hot pressing is compound to obtain
To NTC thermistor material.
Embodiment two
By molecular formula Ni0.97Zn0.03O0.99Cl0.01Dispensing is carried out, initial raw materials are selected from basic nickel carbonate, ammonium chloride and acetic acid
Zinc；Initial feed is pressed into Ni0.97Zn0.03O0.99Cl0.01Dispensing.
The raw material weighed by dissolve respectively, and basic nickel carbonate is dissolved in dust technology, then be added dropwise ammonium hydroxide adjust pH value to
8-9；Ammonium chloride and zinc acetate are dissolved in deionized water respectively；By dissolved three kinds of solution mix, and utilize magnetic force
Agitating and heating device is uniformly mixed, heat drying；Powder made from previous step is calcined, temperature is 950 DEG C, insulation
5 it is small when, obtain Ni-based resistance material.
Small porcelain boat equipped with nanometer silicon monoxide powder is placed horizontally among alumina tube, the pipe is then placed on height
In warm tube furnace, vacuumize in 50Pa, then keep the temperature 1000 DEG C of temperature and respectively 80min, be warming up to 1400 DEG C of insulations afterwards
6h；600 DEG C are cooled to the speed of 15 DEG C/min afterwards and keep the temperature 40min, while air is blasted to furnace chamber with 60sccm, it is natural
It is cooled to room temperature, obtains silicon nanowires, it is spare.
Silane coupling agent is added to deionized water, and with vinegar acid for adjusting pH to 3.5,50min is stirred at room temperature, afterwards
The silicon nanowires is added, in 95 DEG C of back flow reaction 20h, filters, wash, is dry, the silicon nanowires compound after being coupled.
Silicon nanowires compound, active carbon nanoparticles after obtained coupling are added to deionized water, with ultrasonic wave 45
DEG C, mix 30-50min under conditions of 150W, static aging 40h at room temperature, in being cleaned with deionized water and being in efflux repeatedly
Property, 150 DEG C of drying 20h are to constant weight, cooling, dry then when 400 DEG C of roastings 5 are small, and activated carbon supported silicon nanowires, ball milling is made
Crushing obtains activated carbon supported silicon nano material conductive filler.
According to following parts by weight dispensing:
51 parts of high molecular polymer
Above-mentioned 3.5 parts of activated carbon supported silicon nano material conductive filler
Above-mentioned 27 parts of Ni-based resistance material.
Preferably, the high molecular polymer is Vingon.
It is uniformly mixed by above-mentioned dispensing；Then extruding pelletization, obtains pellet；The pellet carries out to hot pressing is compound to obtain
To NTC thermistor material.
Claims (2)
1. a kind of preparation method of NTC thermistor material, this method comprises the following steps：
（1）Prepare Ni-based resistance material
By molecular formula Ni1-xZnxO1-yClyCarry out dispensing, wherein x=0.01-0.03, y=0.005-0.01, initial raw materials choosing
From basic nickel carbonate, ammonium chloride and zinc acetate；
Initial feed is pressed into Ni1-xZnxO1-yClyDispensing, weighs basic nickel carbonate, ammonium chloride and zinc acetate；
The raw material weighed by dissolve respectively, and basic nickel carbonate is dissolved in dust technology, and ammonium hydroxide is then added dropwise and adjusts pH value to 8-9；
Ammonium chloride and zinc acetate are dissolved in deionized water respectively；
By dissolved three kinds of solution mix, and be uniformly mixed using magnetic agitation heater, heat drying；
Powder made from previous step is calcined, temperature is 880-950 DEG C, when insulation 4-5 is small, obtains Ni-based resistance material
Material；
（2）Prepare activated carbon supported silicon nano material conductive filler
Small porcelain boat equipped with nanometer silicon monoxide powder is placed horizontally among alumina tube, the pipe is then placed on high temperature pipe
In formula stove, vacuumize in 20-50Pa, then keep the temperature 900-1000 DEG C of temperature and respectively 60-80min, be warming up to 1300- afterwards
1400 DEG C of insulation 4-6h；500-600 DEG C is cooled to the speed of 10-15 DEG C/min and keep the temperature 30-40min afterwards, while with
60sccm blasts air to furnace chamber, and cooled to room temperature, obtains silicon nanowires, spare；
Silane coupling agent is added to deionized water, and with vinegar acid for adjusting pH to 3.5,30-50min is stirred at room temperature, afterwards
The silicon nanowires is added, in 85-95 DEG C of back flow reaction 15-20h, filters, wash, is dry, the silicon nanowires after being coupled
Compound；
Silicon nanowires compound, active carbon nanoparticles after obtained coupling are added to deionized water, with ultrasonic wave 45 DEG C,
30-50min is mixed under conditions of 150W, at room temperature static aging 30-40h, in being cleaned with deionized water and being in efflux repeatedly
Property, 120-150 DEG C of drying 15-20h is to constant weight, cooling, dry then when 350-400 DEG C of roasting 3-5 is small, is made activated carbon supported
Silicon nanowires, ball mill grinding obtain activated carbon supported silicon nano material conductive filler；
（3）According to following parts by weight dispensing:
42-51 parts of high molecular polymer
Above-mentioned 2-3.5 parts of activated carbon supported silicon nano material conductive filler
Above-mentioned Ni-based resistance material 22-27 parts；
（4）It is uniformly mixed by above-mentioned dispensing；Then extruding pelletization, obtains pellet；The pellet carries out to hot pressing is compound to obtain
To NTC thermistor material.
2. preparation method as claimed in claim 1, it is characterised in that the high molecular polymer is high density polyethylene (HDPE), gathers
Propylene（PP), at least one of Kynoar, Vingon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711186123.9A CN108002746A (en) | 2017-11-23 | 2017-11-23 | A kind of preparation method of NTC thermistor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711186123.9A CN108002746A (en) | 2017-11-23 | 2017-11-23 | A kind of preparation method of NTC thermistor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108002746A true CN108002746A (en) | 2018-05-08 |
Family
ID=62053594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711186123.9A Pending CN108002746A (en) | 2017-11-23 | 2017-11-23 | A kind of preparation method of NTC thermistor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108002746A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108863160A (en) * | 2018-07-06 | 2018-11-23 | 句容市博远电子有限公司 | A kind of preparation method of the Ni-based thermistor material of NTC |
| CN108899144A (en) * | 2018-07-06 | 2018-11-27 | 句容市博远电子有限公司 | A kind of preparation method of Ni-based thermistor material |
| CN108962519A (en) * | 2018-07-06 | 2018-12-07 | 句容市博远电子有限公司 | A kind of preparation method of high temperature thermistor material |
| WO2021068888A1 (en) * | 2019-10-09 | 2021-04-15 | 湖北中烟工业有限责任公司 | Ni-based composite material heating body and preparation method therefor |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1555066A (en) * | 2003-12-23 | 2004-12-15 | 上海维安热电材料股份有限公司 | Thermistor and its producing method |
| US20090165289A1 (en) * | 2007-12-26 | 2009-07-02 | Deng Wen-How | Method for fabricating negative temperature coefficient thermistor |
| CN101654530A (en) * | 2009-09-18 | 2010-02-24 | 清华大学 | Negative temperature coefficient polymer composite material for temperature sensing cable and preparation method |
| US8502638B1 (en) * | 2012-02-03 | 2013-08-06 | Polytronics Technology Corp. | Thermistor |
| CN104252935A (en) * | 2013-06-25 | 2014-12-31 | 比亚迪股份有限公司 | Thermistor and method for manufacturing the same |
| CN104497394A (en) * | 2014-12-11 | 2015-04-08 | 郑州大学 | Polymer based temperature-sensitive resistance material with negative temperature coefficient (NTC) effect and preparation method thereof |
| CN105967656A (en) * | 2016-05-06 | 2016-09-28 | 中南大学 | Novel NTC thermistor material based on nickel oxide |
| CN106158177A (en) * | 2016-07-07 | 2016-11-23 | 惠州市聚鼎电子有限公司 | A kind of PTC macromolecular thermosensitive resistor material and preparation method thereof |
| CN106947242A (en) * | 2017-03-20 | 2017-07-14 | 苏州南尔材料科技有限公司 | A kind of preparation method of the macromolecular material of active charcoal load silicon nanowires |
| CN106957473A (en) * | 2017-03-31 | 2017-07-18 | 苏州南尔材料科技有限公司 | A kind of preparation method of composite cable material |
| CN107200563A (en) * | 2017-06-28 | 2017-09-26 | 中南大学 | Al Li optimization Ni Zn oxide negative temperature coefficient heat-sensitive resistance materials |
-
2017
- 2017-11-23 CN CN201711186123.9A patent/CN108002746A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1555066A (en) * | 2003-12-23 | 2004-12-15 | 上海维安热电材料股份有限公司 | Thermistor and its producing method |
| US20090165289A1 (en) * | 2007-12-26 | 2009-07-02 | Deng Wen-How | Method for fabricating negative temperature coefficient thermistor |
| CN101654530A (en) * | 2009-09-18 | 2010-02-24 | 清华大学 | Negative temperature coefficient polymer composite material for temperature sensing cable and preparation method |
| US8502638B1 (en) * | 2012-02-03 | 2013-08-06 | Polytronics Technology Corp. | Thermistor |
| CN104252935A (en) * | 2013-06-25 | 2014-12-31 | 比亚迪股份有限公司 | Thermistor and method for manufacturing the same |
| CN104497394A (en) * | 2014-12-11 | 2015-04-08 | 郑州大学 | Polymer based temperature-sensitive resistance material with negative temperature coefficient (NTC) effect and preparation method thereof |
| CN105967656A (en) * | 2016-05-06 | 2016-09-28 | 中南大学 | Novel NTC thermistor material based on nickel oxide |
| CN106158177A (en) * | 2016-07-07 | 2016-11-23 | 惠州市聚鼎电子有限公司 | A kind of PTC macromolecular thermosensitive resistor material and preparation method thereof |
| CN106947242A (en) * | 2017-03-20 | 2017-07-14 | 苏州南尔材料科技有限公司 | A kind of preparation method of the macromolecular material of active charcoal load silicon nanowires |
| CN106957473A (en) * | 2017-03-31 | 2017-07-18 | 苏州南尔材料科技有限公司 | A kind of preparation method of composite cable material |
| CN107200563A (en) * | 2017-06-28 | 2017-09-26 | 中南大学 | Al Li optimization Ni Zn oxide negative temperature coefficient heat-sensitive resistance materials |
Non-Patent Citations (1)
| Title |
|---|
| 王卫民等: "NTC热敏电阻材料组成及制备工艺研究进展", 《材料科学与工程学报》, vol. 23, no. 2, pages 286 - 289 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108863160A (en) * | 2018-07-06 | 2018-11-23 | 句容市博远电子有限公司 | A kind of preparation method of the Ni-based thermistor material of NTC |
| CN108899144A (en) * | 2018-07-06 | 2018-11-27 | 句容市博远电子有限公司 | A kind of preparation method of Ni-based thermistor material |
| CN108962519A (en) * | 2018-07-06 | 2018-12-07 | 句容市博远电子有限公司 | A kind of preparation method of high temperature thermistor material |
| CN108899144B (en) * | 2018-07-06 | 2020-06-05 | 句容市博远电子有限公司 | Preparation method of nickel-based thermistor material |
| CN108863160B (en) * | 2018-07-06 | 2020-08-25 | 句容市博远电子有限公司 | Preparation method of NTC nickel-based thermistor material |
| WO2021068888A1 (en) * | 2019-10-09 | 2021-04-15 | 湖北中烟工业有限责任公司 | Ni-based composite material heating body and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108002746A (en) | A kind of preparation method of NTC thermistor material | |
| CN101318814B (en) | Hydrothermal reaction method for manufacturing negative temperature coefficient heat-sensitive powder | |
| CN107226694B (en) | PTCR ceramic material, preparation method and application thereof | |
| WO2008150026A1 (en) | Thermoelectric conversion element and process for producing the thermoelectric conversion element | |
| CN100527290C (en) | A method for microwave sintering zinc oxide pressure-sensitive resistor | |
| CN101986405B (en) | Method for manufacturing nozzle for circuit breaker | |
| CN102342869A (en) | Positive temperature coefficient (PTC) self-temperature-control hand warmer and manufacturing method thereof | |
| CN103787653A (en) | Preparation method of carbon-modified CaCu3Ti4O12 high dielectric material | |
| CN104311004B (en) | PTC ceramic material and method for improving resistance temperature stability below curie point of PTC ceramic material | |
| JP5410245B2 (en) | Spherical alumina powder, its production method and use. | |
| CN110041080A (en) | A method of preparing near-spherical hexagonal boron nitride agglomerated particle | |
| CN109293354B (en) | PTC ceramic material and preparation method thereof | |
| CN102903925A (en) | Preparation method of Mg-doped ternary cathode material | |
| CN104466167B (en) | Method for preparing positive material LiNi1/3Co1/3Mn1/3O2 of lithium ion battery | |
| CN107758741B (en) | A kind of Sb-doped nano tin oxide raw powder's production technology | |
| CN104402038A (en) | Preparation method for monodisperse nanometer ZnO pressure-sensitive ceramic powder | |
| CN106009685A (en) | Compound PTC thermistor heating material | |
| CN108383521A (en) | A kind of BaTiO3The preparation method of potsherd | |
| CN107767993A (en) | Film with conducting function and preparation method thereof | |
| CN102664081A (en) | Preparing method of ternary-system titanium-carbide-containing positive temperature coefficient thermistor | |
| CN111056836A (en) | Preparation method of high-Tc low-resistance lead-free PTC material | |
| CN100415414C (en) | High precision thermosensitive resistor nanometer powder production method | |
| CN109678215A (en) | A kind of partial size is small and the preparation method of uniform cobaltosic oxide | |
| CN107680767A (en) | A kind of preparation method of carbon silicon doping thermistor | |
| CN207993511U (en) | film with conducting function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180508 |