CN107994014B - Image sensor - Google Patents
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- CN107994014B CN107994014B CN201610934361.2A CN201610934361A CN107994014B CN 107994014 B CN107994014 B CN 107994014B CN 201610934361 A CN201610934361 A CN 201610934361A CN 107994014 B CN107994014 B CN 107994014B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/18—Eye characteristics, e.g. of the iris
- G06V40/19—Sensors therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Abstract
An image sensor includes a visible light receiving portion and an infrared light receiving portion. The visible light receiving part is used for receiving visible light, and the infrared light receiving part is used for receiving infrared light. The infrared light receiving part includes: the infrared light photodiode, at least one white filter layer and at least one infrared light penetration filter layer. The at least one white filter layer and the at least one infrared light penetration filter layer are both arranged on the infrared light photodiode. The infrared light penetrates through the white filter layer and the infrared light penetrates through the filter layer to be received by the infrared light photodiode.
Description
Technical Field
The present invention relates to an image sensor, and more particularly to an image sensor with infrared sensing function.
Background
With the development of access control systems and security systems, biometric (biometric) technology for confirming the identity of an individual using human body characteristics has been increasingly prevalent. One of the popular biometric techniques is iris recognition with high reliability. When the iris recognition technology is applied to an electronic device, such as a smart phone, the smart phone needs an image sensor capable of receiving visible light and infrared light respectively to realize an iris recognition function. The conventional image sensor has two different parts for receiving visible light and infrared light, respectively.
Disclosure of Invention
The invention provides an image sensor, which comprises a visible light receiving part and an infrared light receiving part. The visible light receiving part is used for receiving visible light, and the infrared light receiving part is used for receiving infrared light. The infrared light receiving part includes: the infrared light photodiode, at least one white filter layer and at least one infrared light penetration filter layer. The at least one white filter layer and the at least one infrared light penetration filter layer are both arranged on the infrared light photodiode. Wherein the infrared light passes through the at least one white filter layer and the at least one infrared light passes through the filter layer and is received by the infrared photodiode.
Drawings
Aspects of the present disclosure may be better understood from the following detailed description taken in conjunction with the accompanying drawings. It is noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Fig. 1 is a cross-sectional view of an image sensor according to a first embodiment of the invention.
FIG. 2 is a cross-sectional view of an image sensor according to a second embodiment of the invention.
FIG. 3 is a cross-sectional view of an image sensor according to a third embodiment of the invention.
FIG. 4 is a cross-sectional view of an image sensor according to a fourth embodiment of the invention.
FIG. 5 is a cross-sectional view of an image sensor according to a fifth embodiment of the invention.
FIG. 6 is a cross-sectional view of an image sensor according to a sixth embodiment of the invention.
FIG. 7 is a cross-sectional view of an image sensor according to a seventh embodiment of the invention.
Fig. 8 is a cross-sectional view illustrating an image sensor according to an eighth embodiment of the invention.
Description of reference numerals:
100. 200, 300, 400, 500, 600, 700, 800: image sensor
110. 210, 510, 610: visible light receiving part
112: visible light sensing layer
114. 514: color filter layer
114 a: red filter unit
114 b: blue filter unit
114 c: green light filtering unit
116. 516: infrared light cut-off filter layer
120. 220, 320, 420, 520, 620, 720, 820: infrared light receiving part
122: infrared light sensing layer
124. 324, 325, 424, 524, 624, 724, 725, 825: white filter layer
126. 226, 326, 327, 526, 726, 727: infrared light penetration filter layer
ML: microlens layer
PL1, PL2, PL3, PL 4: planarization layer
SP: spacer layer
WA: wafer layer
Detailed Description
The present disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the disclosure. For example, if the following description refers to a first feature being formed over a second feature, this may include embodiments in which the first feature is in direct contact with the second feature; this may also include embodiments in which additional features are formed between the first and second features, such that the first and second features are not in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Also, spatially relative terms, such as lower, upper, higher and the like, may be used for ease of explanation of the relationship of one element or feature to another in the figures. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. These devices may also be rotated (e.g., by 90 degrees or to other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Fig. 1 is a cross-sectional view of an image sensor 100 according to a first embodiment of the invention. As shown in fig. 1, the image sensor 100 includes a visible light receiving part 110 and an infrared light receiving part 120. The visible light receiving part 110 is used for receiving visible light, and the infrared light receiving part 120 is used for receiving infrared light.
As shown in fig. 1, the visible light receiving portion 110 includes a visible light sensing layer 112, a color filter layer 114, and an infrared light cut filter layer 116. The color filter layer 114 and an infrared Cut (IR Cut) filter layer 116 are disposed on the visible light sensing layer 112 to provide color light to the visible light sensing layer 112. The visible light sensing layer 112 is used for receiving visible light to generate a main image signal accordingly. In the present embodiment, the visible light sensing layer 112 includes at least one photodiode for sensing color light. The photodiode may be a Complementary Metal Oxide Semiconductor (CMOS) diode. However, embodiments of the present invention are not limited thereto.
The color filter layer 114 is used to provide colored light. In the embodiment, the color filter layer 114 includes a red filter unit 114a, a blue filter unit 114b and a green filter unit 114c, but the embodiment of the invention is not limited thereto. The infrared light cut filter layer 116 is used to cut infrared light. In other words, when the colored light passes through the infrared light cut-off filter layer 116, the infrared light cut-off filter layer 116 may block transmission of infrared light. In the present embodiment, the infrared light cut filter layer 116 blocks light having a wavelength greater than 850 nanometers, but the embodiments of the present invention are not limited thereto. Furthermore, in the embodiment, the infrared light cut-off layer 116 is disposed between the color filter layer 114 and the visible light sensing layer 112, but the embodiment of the invention is not limited thereto.
As shown in fig. 1, the IR receiving part 120 includes an IR sensing layer 122, a white filter layer 124, and an IR Pass (IR Pass) filter layer 126. The white filter layer 124 and the infrared light-penetrating filter layer 126 are disposed on the infrared light sensing layer 122 to provide infrared light to the infrared light sensing layer 122. The infrared light sensing layer 122 is used for receiving infrared light to generate an auxiliary image signal accordingly. In the present embodiment, the infrared light sensing layer 122 includes at least one photodiode for sensing infrared light. The photodiode may be a complementary metal oxide semiconductor diode. However, embodiments of the present invention are not limited thereto.
The infrared light penetrates the filter layer 126 to block visible light. In other words, when light passes through the infrared light penetration filter layer 126, the infrared light penetration filter layer 126 may block transmission of visible light. In the embodiment, the infrared light penetration filter layer 126 blocks light with a wavelength less than 850 nm, but the embodiment of the invention is not limited thereto. The white filter layer 124 is used to pass infrared light. In the embodiment, the white filter layer 124 is a white photoresist, but the embodiment of the invention is not limited thereto. In addition, in the embodiment, the white filter layer 124 is disposed between the infrared light transmissive filter layer 126 and the infrared light sensing layer 122, but the embodiment of the invention is not limited thereto.
As shown in fig. 1, the visible light-receiving section 110 and the infrared light-receiving section 120 further include a wafer layer WA, a planarization layer PL1, a spacer layer SP, and a microlens layer ML. The wafer layer WA is used to provide a substrate on which the infrared light cut filter layer 116 and the white filter layer 124 are formed. In the embodiment, the wafer layer WA is a glass wafer, but the embodiment of the invention is not limited thereto.
The planarization layer PL1 is formed on the infrared light cut filter layer 116 and the white filter layer 124 to provide a planarized surface on which the color filter layer 114 and the infrared light transmission filter layer 126 are disposed. The planarization layer PL1 also provides a good interface to help the color filter layer 114 and the ir pass filter layer 126 adhere to the planarization layer PL 1. Note that, in the present embodiment, the thickness of the infrared light cut filter layer 116 is substantially equal to the thickness of the white filter layer 124.
The spacer layer SP is located on the color filter layer 114 and the infrared light transmittance filter layer 126 to provide a flat surface on which the microlens layer ML is disposed. It should be noted that in the present embodiment, the thickness of the color filter layer 114 is substantially equal to the thickness of the infrared light penetration filter layer 126. The microlens layer ML serves to collect infrared light and visible light. Specifically, when the image sensor 100 is used to sense an object (e.g., an iris), the object is focused by the microlens layer ML. Further, the focus of the image sensor 100 can be adjusted by changing the thickness of the microlens layer ML.
It should be noted that the material of the microlens layer ML may be epoxy resin, optical cement, acryl material (PMMAs), polyurethane plastic material (PUs), silicone material (PDMS), or other light-transmitting material that is thermally or optically hardened, but the embodiment of the present invention is not limited thereto.
Compared to the conventional image sensor, the image sensor 100 has less light intensity loss of the infrared light received by the image sensor 100 because the white filter layer 124 is disposed in the ir receiving portion 120, so that the entire thickness of the ir transmitting filter layer 126 is reduced. Therefore, the infrared light received by the image sensor 100 has a better light intensity to meet the requirement of the user.
It should be noted that the configuration of the infrared light penetration filter layer 126 and the white filter layer 124 is not limited to the first embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 126 and the white filter layer 124 are interchanged.
Fig. 2 is a cross-sectional view of an image sensor 200 according to a second embodiment of the invention. As shown in fig. 2, the image sensor 200 includes a visible light receiving part 210 and an infrared light receiving part 220, wherein the visible light receiving part 210 includes a planarization layer PL2, and the infrared light receiving part 220 includes an infrared light transmitting filter layer 226. It is to be noted that the planarization layer PL2 is similar to the planarization layer PL1, and the infrared light-transmitting filter layer 226 is similar to the infrared light-transmitting filter layer 126. The structure of the image sensor 200 is similar to that of the image sensor 100, except that the planarization layer PL2 is located only within the visible light-receiving portion 210. It should be noted that in the present embodiment, the sum of the thickness of the color filter layer 114 and the thickness of the planarization layer PL2 is substantially equal to the thickness of the infrared light penetration filter layer 226. Similar to the image sensor 100, the infrared light received by the image sensor 200 has a better light intensity to meet the user's requirement.
It should be noted that the configuration of the infrared light transmitting filter layer 226 and the white filter layer 124 is not limited to the second embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 226 and the white filter layer 124 are interchanged.
Fig. 3 is a cross-sectional view of an image sensor 300 according to a third embodiment of the invention. As shown in fig. 3, the image sensor 300 includes a visible light receiving part 110 and an ir receiving part 320, wherein the ir receiving part 220 includes ir transmitting filter layers 326 and 327 and white filter layers 324 and 325 alternately stacked on each other. It is noted that the infrared light penetration filter layers 326, 327 are similar to the infrared light penetration filter layer 126, and the white filter layers 324, 325 are similar to the white filter layer 124. The structure of the image sensor 300 is similar to that of the image sensor 100, except that the infrared light transmission filter layer 126 is replaced by an infrared light transmission filter layer 326 and a white filter layer 324, and the white filter layer 124 is replaced by an infrared light transmission filter layer 327 and a white filter layer 325. It should be noted that in the present embodiment, the thickness of the color filter layer 114 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 326 and the thickness of the white filter layer 324, and in the present embodiment, the thickness of the infrared light cut filter layer 116 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 327 and the thickness of the white filter layer 325. Similar to the image sensor 100, the infrared light received by the image sensor 300 has a better light intensity to meet the requirement of the user.
It should be noted that the configuration of the infrared light passing filter layers 326 and 327 and the white filter layers 324 and 325 is not limited to the third embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 326 and the white filter layer 324 are interchanged. In some other embodiments of the present invention, the positions of the infrared light penetration filter layer 327 and the white filter layer 325 are interchanged.
Fig. 4 is a cross-sectional view of an image sensor 400 according to a fourth embodiment of the invention. As shown in fig. 4, the image sensor 400 includes a visible light receiving part 210 and an infrared light receiving part 420, wherein the infrared light receiving part 420 includes a white filter layer 424. It should be noted that the white filter layer 424 is similar to the white filter layer 124. The structure of the image sensor 400 is similar to that of the image sensor 300 except that the planarization layer PL2 is located only in the visible light-receiving portion 210. It should be noted that in the present embodiment, the sum of the thickness of the color filter layer 114 and the thickness of the planarization layer PL2 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 326 and the thickness of the white filter layer 424. Similar to the image sensor 300, the infrared light received by the image sensor 400 has a better light intensity to meet the user's requirement.
It should be noted that the configurations of the infrared light transmission filter layers 326 and 327 and the white filter layers 424 and 325 are not limited to the fourth embodiment. In some embodiments of the present invention, the positions of the infrared light penetrating filter layer 326 and the white filter layer 424 are interchanged. In some other embodiments of the present invention, the positions of the infrared light penetration filter layer 327 and the white filter layer 325 are interchanged.
Fig. 5 is a cross-sectional view of an image sensor 500 according to a fifth embodiment of the invention. As shown in fig. 5, the image sensor 500 includes a visible light receiving portion 510 and an infrared light receiving portion 520, wherein the visible light receiving portion 510 includes a planarization layer PL3, a color filter layer 514, and an infrared light cut filter layer 516, and the infrared light receiving portion 520 includes a planarization layer PL3, a white filter layer 524, and an infrared light transmission filter layer 526. It is to be noted that the planarization layer PL3 is similar to the planarization layer PL1, the color filter layer 514 is similar to the color filter layer 114, the infrared light cut filter layer 516 is similar to the infrared light cut filter layer 116, the white filter layer 524 is similar to the white filter layer 124, and the infrared light penetration filter layer 526 is similar to the infrared light penetration filter layer 126. The structure of the image sensor 500 is similar to that of the image sensor 100, except that the color filter layer 514 is located between the infrared light cut-off filter layer 516 and the planarization layer PL 3. It should be noted that in the present embodiment, the thickness of the color filter layer 514 is substantially equal to the thickness of the white filter layer 524, and the thickness of the infrared light cut filter layer 516 is substantially equal to the thickness of the infrared light transmission filter layer 526. Similar to the image sensor 100, the infrared light received by the image sensor 500 has a better light intensity to meet the requirement of the user.
It should be noted that the configuration of the infrared light penetration filter layer 526 and the white filter layer 524 is not limited to the fifth embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 526 and the white filter layer 524 are interchanged.
Fig. 6 is a cross-sectional view of an image sensor 600 according to a sixth embodiment of the invention. As shown in fig. 6, the image sensor 600 includes a visible light receiving part 610 and an infrared light receiving part 620, wherein the visible light receiving part 610 includes a planarization layer PL4, and the infrared light receiving part 620 includes a white filter layer 624. It should be noted that the planarization layer PL4 is similar to the planarization layer PL1 and the white filter layer 624 is similar to the white filter layer 124. The structure of image sensor 600 is similar to that of image sensor 500 except that a planarization layer PL4 is located only in the visible light receiving portion 610. It should be noted that in the present embodiment, the sum of the thickness of the color filter layer 514 and the thickness of the planarization layer PL4 is substantially equal to the thickness of the white filter layer 624. Similar to the image sensor 500, the infrared light received by the image sensor 600 has a better light intensity to meet the user's requirement.
It should be noted that the configuration of the infrared light passing filter layer 526 and the white filter layer 624 is not limited to the sixth embodiment. In some embodiments of the present invention, the locations of the infrared light penetration filter layer 526 and the white filter layer 624 are interchanged.
Fig. 7 is a cross-sectional view illustrating an image sensor 700 according to a seventh embodiment of the invention. As shown in fig. 7, the image sensor 700 includes a visible light receiving part 510 and an infrared light receiving part 720, wherein the infrared light receiving part 720 includes infrared light transmitting filter layers 726, 727 and white filter layers 724, 725 alternately stacked on each other. It is noted that the infrared light penetration filter layers 726, 727 are similar to the infrared light penetration filter layer 126, and the white filter layers 724, 725 are similar to the white filter layer 124. The structure of the image sensor 700 is similar to that of the image sensor 500, except that the infrared light transmissive filter layer 526 is replaced by an infrared light transmissive filter layer 726 and a white filter layer 724, and the white filter layer 524 is replaced by an infrared light transmissive filter layer 727 and a white filter layer 725. It is to be noted that, in the present embodiment, the thickness of the color filter layer 514 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 727 and the thickness of the white filter layer 725, and the thickness of the infrared light cut filter layer 516 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 726 and the thickness of the white filter layer 724. Similar to the image sensor 500, the infrared light received by the image sensor 700 has a better light intensity to meet the user's requirement.
It should be noted that the configurations of the infrared light penetration filter layers 726 and 727 and the white filter layers 724 and 725 are not limited to the third embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 726 and the white filter layer 724 are interchanged. In some other embodiments of the present invention, the arrangement positions of the infrared light penetration filter layer 727 and the white filter layer 725 are interchanged.
Fig. 8 is a cross-sectional view illustrating an image sensor 800 according to an eighth embodiment of the invention. As shown in fig. 8, the image sensor 800 includes a visible light receiving part 610 and an infrared light receiving part 820, wherein the infrared light receiving part 820 includes a white filter layer 825. It should be noted that the white filter layer 825 is similar to the white filter layer 124. The structure of the image sensor 800 is similar to that of the image sensor 700 except that the planarization layer PL4 is located only in the visible light receiving portion 610. It should be noted that in the present embodiment, the sum of the thickness of the color filter layer 514 and the thickness of the planarization layer PL4 is substantially equal to the sum of the thickness of the infrared light penetration filter layer 727 and the thickness of the white filter layer 825. Similar to the image sensor 700, the infrared light received by the image sensor 800 has a better light intensity to meet the user's requirement.
It should be noted that the configurations of the infrared light penetration filter layers 726 and 727 and the white filter layers 724 and 825 are not limited to the eighth embodiment. In some embodiments of the present invention, the positions of the infrared light penetration filter layer 726 and the white filter layer 724 are interchanged. In some other embodiments of the present invention, the arrangement positions of the infrared light penetration filter layer 727 and the white filter layer 825 are interchanged.
In some embodiments of the present invention, the number of the white filter layers and the number of the infrared light transmission filter layers are both greater than 1, and the white filter layers and the infrared light transmission filter layers are alternately stacked on the infrared light sensing layer, but the embodiments of the present invention are not limited thereto.
Therefore, the structure of the image sensor of the present invention can effectively increase the light intensity of the infrared light received by the image sensor to meet the requirements of users, thereby reducing the difficulty in analyzing optical signals (such as image signals) on other instruments.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. It should also be understood by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (15)
1. An image sensor, comprising:
a visible light receiving part for receiving a visible light; and
an infrared light receiving part for receiving an infrared light, wherein the infrared light receiving part comprises:
an infrared photodiode;
at least one white filter layer arranged on the infrared photodiode; and
at least one infrared light penetration filter layer arranged on the infrared light photodiode;
wherein
The infrared light penetrates through the at least one white filter layer and the at least one infrared light penetration filter layer and is received by the infrared light photodiode;
the visible light receiving part includes:
a visible light photodiode;
a color filter layer disposed on the visible light photodiode; and
an infrared light cut-off filter layer arranged on the visible light photodiode;
wherein the visible light passes through the color filter layer and the infrared light cut-off filter layer and is received by the visible light photodiode;
the number of the at least one white filter layer is greater than 1, the number of the at least one infrared light penetration filter layer is greater than 1, the white filter layers and the infrared light penetration filter layers are alternately stacked on the infrared light photodiode, and the sum of the thicknesses of the white filter layers and the infrared light penetration filter layers is equal to the sum of the thicknesses of the color filter layers and the infrared light stop filter layers.
2. The image sensor of claim 1, further comprising a wafer layer on the infrared photodiode and the visible photodiode, wherein a first portion of the wafer layer is within the visible light receiving portion and a second portion of the wafer layer is within the infrared light receiving portion.
3. The image sensor as claimed in claim 2, wherein the infrared light cut filter layer is located between the color filter layer and the visible light photodiode, and the first portion of the wafer layer is located between the infrared light cut filter layer and the visible light photodiode.
4. The image sensor as claimed in claim 2, wherein the color filter layer is located between the infrared light cut filter layer and the visible light photodiode, and the first portion of the wafer layer is located between the color filter layer and the visible light photodiode.
5. The image sensor as claimed in claim 2, wherein the at least one white filter layer is disposed between the at least one infrared light transmissive filter layer and the infrared photodiode, and the second portion of the wafer layer is disposed between the at least one white filter layer and the infrared photodiode.
6. The image sensor as claimed in claim 2, wherein the at least one infrared light-transmissive filter layer is disposed between the at least one white filter layer and the infrared photodiode, and the second portion of the wafer layer is disposed between the at least one infrared light-transmissive filter layer and the infrared photodiode.
7. The image sensor as claimed in claim 1, wherein the color filter layer comprises a red filter unit, a green filter unit and a blue filter unit.
8. The image sensor as claimed in claim 1, further comprising a planarization layer for providing a planarized surface, wherein the color filter layer is disposed on the planarized surface.
9. The image sensor as in claim 8, wherein the planarization layer is located within the visible light receiving portion and the infrared light receiving portion.
10. The image sensor as in claim 8, wherein the planarization layer is located within the visible light receiving portion.
11. The image sensor as claimed in claim 1, further comprising a micro-lens layer for collecting the visible light and the infrared light.
12. The image sensor as in claim 11, wherein the microlens layer is disposed on an uppermost layer of the image sensor.
13. The image sensor as in claim 11, wherein the microlens layer is located within the visible light receiving portion and the infrared light receiving portion.
14. The image sensor of claim 11 further comprising a spacer layer providing a planar surface, wherein the microlens layer is disposed on the planar surface.
15. The image sensor as in claim 14, wherein the spacer layer is located within the visible light receiving portion and the infrared light receiving portion.
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| CN201610934361.2A CN107994014B (en) | 2016-10-25 | 2016-10-25 | Image sensor |
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| CN201610934361.2A CN107994014B (en) | 2016-10-25 | 2016-10-25 | Image sensor |
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| CN107994014B true CN107994014B (en) | 2020-06-30 |
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| CN102683363B (en) * | 2011-03-16 | 2015-03-25 | 株式会社东芝 | Solid-state imaging device and camera module |
| CN105390512A (en) * | 2014-08-22 | 2016-03-09 | 爱思开海力士有限公司 | Image sensor and electronic device having the same |
| CN105990378A (en) * | 2014-10-06 | 2016-10-05 | 采钰科技股份有限公司 | Image sensors and methods of forming the same |
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