CN107994014A - Image sensor - Google Patents
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- CN107994014A CN107994014A CN201610934361.2A CN201610934361A CN107994014A CN 107994014 A CN107994014 A CN 107994014A CN 201610934361 A CN201610934361 A CN 201610934361A CN 107994014 A CN107994014 A CN 107994014A
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- 230000000903 blocking effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Polymers C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/18—Eye characteristics, e.g. of the iris
- G06V40/19—Sensors therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Human Computer Interaction (AREA)
- Health & Medical Sciences (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Ophthalmology & Optometry (AREA)
- General Health & Medical Sciences (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of Image Sensor, includes visible light receiver and infrared light receiver.It can be seen that light receiver is to receive visible ray, infrared light receiver is receiving infrared light.Infrared light receiver includes：Infrared light emitting diodes, at least one white filter layer and at least an infrared light penetrates filter layer.At least one white filter layer penetrates filter layer with an at least infrared light and is all arranged on infrared light emitting diodes.Infrared light is through at least one white filter layer and at least an infrared light penetrates filter layer and received by infrared light emitting diodes.
Description
Technical field
The present invention relates to a kind of Image Sensor, and more particularly to a kind of image sensing with infrared light sensing function
Device.
Background technology
With the development of control of access system and security system, the biological identification of personal identification is confirmed using characteristics of human body
(biometric) technology is gradually prevailing.Iris-recognition technology with high-reliability is the biological identification of one of which popularization
Technology.When iris-recognition technology is applied to electronic device, such as smart mobile phone, smart mobile phone be required to receive respectively visible ray with
The Image Sensor of infrared light realizes iris discriminating function.Traditional Image Sensor is distinguished with two different parts
Receive visible ray and infrared light.
The content of the invention
The present invention proposes a kind of Image Sensor, includes visible light receiver and infrared light receiver.It can be seen that light receiver
To receive visible ray, infrared light receiver is receiving infrared light.Infrared light receiver includes：Infrared light emitting diodes,
At least one white filter layer and at least an infrared light penetrates filter layer.At least one white filter layer is penetrated with an at least infrared light
Filter layer is all arranged on infrared light emitting diodes.Its mid-infrared light is infrared through at least one white filter layer and at least one
Light penetrates filter layer and is received by infrared light emitting diodes.
Brief description of the drawings
From the detailed description done below in conjunction with attached drawing, can have to the aspect of the disclosure and more preferably understand.It is noted that
According to the standard practice of industry, each feature is not drawn to illustrate.In fact, in order to make discussion apparent, the ruler of each feature
It is very little all arbitrarily to increase or decrease.
Fig. 1 is the profile for the Image Sensor for illustrating first embodiment according to the present invention.
Fig. 2 is the profile for illustrating Image Sensor according to the second embodiment of the present invention.
Fig. 3 is the profile for illustrating Image Sensor according to the third embodiment of the invention.
Fig. 4 is the profile for illustrating Image Sensor according to the fourth embodiment of the invention.
Fig. 5 is the profile for illustrating Image Sensor according to the fifth embodiment of the invention.
Fig. 6 is the profile for illustrating Image Sensor according to the sixth embodiment of the invention.
Fig. 7 is the profile for illustrating Image Sensor according to the seventh embodiment of the invention.
Fig. 8 is the profile for the Image Sensor for illustrating the 8th embodiment according to the present invention.
Description of reference numerals：
100、200、300、400、500、600、700、800：Image Sensor
110、210、510、610：It can be seen that light receiver
112：Visible ray sensed layer
114、514：Chromatic filter layer
114a：Red filter unit
114b：Blue filter unit
114c：Green filter unit
116、516：Infrared cut of light filter layer
120、220、320、420、520、620、720、820：Infrared light receiver
122：Infrared light sensed layer
124、324、325、424、524、624、724、725、825：White filter layer
126、226、326、327、526、726、727：Infrared light penetrates filter layer
ML：Microlens layer
PL1、PL2、PL3、PL4：Flatness layer
SP：Wall
WA：Wafer layer
Embodiment
Present disclose provides many different embodiments or example, to the different characteristic of implementation the displosure.For simplification
The specific example of the disclosure, some elements and layout can be in following explanation.Certainly, these are only example rather than to limit
The disclosure.If being formed in for example, refer to fisrt feature in follow-up explanation above second feature, this may include fisrt feature with
Second feature is the embodiment directly contacted；This can also include also forming other features between fisrt feature and second feature
Embodiment, this causes fisrt feature not contacted directly with second feature.In addition, the disclosure may repeat in various examples
Graphical sysmbol and/or word.This repeats to be for concise and clearly purpose, but do not determine the various implementations discussed itself
Relation between example and/or setting.
Furthermore spatially opposite term, for example, it is beneath, following, relatively low, above, higher etc., it is to be solved for easily
Release the relation in the example shown between an element or feature and another element or feature.These spatially opposite term except
Cover the direction painted in the example shown, also contemplated device direction different in use or operation.These devices can also be revolved
Turn (such as be rotated by 90 ° or rotate to other directions), and spatially opposite description used herein can also equally have phase
Corresponding explanation.
Fig. 1 is the profile for the Image Sensor 100 for illustrating first embodiment according to the present invention.As shown in Figure 1, image
Sensor 100 includes visible light receiver 110 and infrared light receiver 120.It can be seen that light receiver 110 is to receive visible ray,
Infrared light receiver 120 is receiving infrared light.
As shown in Figure 1, visible light receiver 110 includes visible ray sensed layer 112, chromatic filter layer 114 and infrared light
Light cutoff filter layer 116.Chromatic filter layer 114 is all arranged at visible ray sensed layer with infrared cut of light (IR Cut) filter layer 116
To provide colourama to visible ray sensed layer 112 on 112.Visible ray sensed layer 112 correspondingly produces to receive visible ray
Main image signal.In the present embodiment, it is seen that light sensing layer 112 includes an at least light emitting diode to sense colourama.Shine
Diode can be Complementary MOS (complementary metal oxide semiconductor, CMOS) two poles
Pipe.However, the embodiment of the present invention not limited to this.
Chromatic filter layer 114 is providing colourama.In the present embodiment, chromatic filter layer 114 includes red filter list
First 114a, blue filter unit 114b and green filter unit 114c, but the embodiment of the present invention not limited to this.Infrared light is cut
Only filter layer 116 is blocking infrared light.In other words, when colourama passes through infrared cut of light filter layer 116, infrared light is cut
Only filter layer 116 can block the transmission of infrared light.In the present embodiment, infrared cut of light filter layer 116 blocks wavelength to be more than 850
The light of nanometer, but the embodiment of the present invention not limited to this.Furthermore in the present embodiment, infrared cut of light layer 116 is arranged at colour
Between filter layer 114 and visible ray sensed layer 112, but the embodiment of the present invention not limited to this.
As shown in Figure 1, infrared light receiver 120 includes infrared light sensed layer 122, white filter layer 124 and infrared light
Penetrate (IR Pass) filter layer 126.White filter layer 124 penetrates filter layer 126 with infrared light and is arranged at infrared light sensed layer
To provide infrared light to infrared light sensed layer 122 on 122.Infrared light sensed layer 122 correspondingly produces to receive infrared light
Assisted image signal.In the present embodiment, infrared light sensed layer 122 includes an at least light emitting diode to sense infrared light.Hair
Optical diode can be Complementary MOS diode.However, the embodiment of the present invention not limited to this.
Infrared light penetrates filter layer 126 to block visible ray.In other words, when light penetrates filter layer through infrared light
When 126, infrared light penetrate filter layer 126 can blocking visible light transmission.In the present embodiment, infrared light penetrates filter layer 126
The light for blocking wavelength to be less than 850 nanometers, but the embodiment of the present invention not limited to this.White filter layer 124 is wearing infrared light
Cross.In the present embodiment, white filter layer 124 is white photoresist, but the embodiment of the present invention not limited to this.Furthermore in this reality
To apply in example, white filter layer 124 is arranged at infrared light and penetrates between filter layer 126 and infrared light sensed layer 122, but the present invention
Embodiment not limited to this.
As shown in Figure 1, visible light receiver 110 and infrared light receiver 120 also comprising wafer layer WA, flatness layer PL1,
Interlayer SP and microlens layer ML.Wafer layer WA is providing substrate so that infrared cut of light filter layer 116 and white filter layer
124 are formed thereon.In the present embodiment, wafer layer WA is glass wafer, but the embodiment of the present invention not limited to this.
Flatness layer PL1 is formed at infrared cut of light filter layer 116 with making coloured silk on white filter layer 124 to provide flat surfaces
Color filtering optical layer 114 penetrates filter layer 126 with infrared light and is arranged on.Flatness layer PL1 also provides good interface to assist colour
Filter layer 114 penetrates filter layer 126 with infrared light and is attached on flatness layer PL1.It should be noted that in the present embodiment, it is infrared
The thickness of light light cutoff filter layer 116 and the thickness of white filter layer 124 are substantially equal.
Wall SP be located at chromatic filter layer 114 and infrared light penetrate on filter layer 126 with provide flat surfaces make it is micro-
Mirror layer ML is arranged on.It should be noted that in the present embodiment, thickness and the infrared light of chromatic filter layer 114 penetrate optical filtering
The thickness of layer 126 is substantially equal.Microlens layer ML is assembling infrared light and visible ray.Specifically, Image Sensor is worked as
100 to sense object (such as iris) when, by microlens layer ML come Focused objects.Furthermore can be by varying microlens layer ML
Thickness adjust the focusing of Image Sensor 100.
It should be noted that the material of microlens layer ML can be epoxy resin, optical cement, acrylic material
(polymethylmethacrylates, PMMAs), plasticized polyurethane glue material (polyurethanes, PUs), silica gel material
(polydimethylsiloxane, PDMS) or the light transmissive material of other thermmohardenings or photo-hardening, but the embodiment of the present invention is not
It is limited to this.
Compared to traditional Image Sensor, Image Sensor 100 is because white filter layer 124 is arranged at infrared light-receiving
In portion 120, reduce the integral thickness that infrared light penetrates filter layer 126, therefore the infrared light that Image Sensor 100 receives has
Less loss of light intensity.So there is the infrared light received by Image Sensor 100 preferable luminous intensity to be used with meeting
The demand of person.
It should be noted that infrared light penetrates filter layer 126 and the configuration of white filter layer 124 is not limited to the first implementation
Example.In some embodiments of the invention, infrared light penetrates the setting location swap of filter layer 126 and white filter layer 124.
Fig. 2 is the profile for illustrating Image Sensor 200 according to the second embodiment of the present invention.As shown in Fig. 2, image
Sensor 200 includes visible light receiver 210 and infrared light receiver 220, wherein visible light receiver 210 includes flatness layer
PL2, and infrared light receiver 220 penetrates filter layer 226 comprising infrared light.It should be noted that flatness layer PL2 is similar to flatness layer
PL1, and infrared light penetrates filter layer 226 and penetrates filter layer 126 similar to infrared light.The structure of Image Sensor 200 is similar to
The structure of Image Sensor 100, difference are that flatness layer PL2 is only located in visible light receiver 210.It should be noted that
In the present embodiment, the summation of the thickness of chromatic filter layer 114 and the thickness of flatness layer PL2 is substantially equal to infrared light and penetrates
The thickness of filter layer 226.Similar to Image Sensor 100, the infrared light received by Image Sensor 200 has preferable light
Intensity is to meet the demand of user.
It should be noted that infrared light penetrates filter layer 226 and the configuration of white filter layer 124 is not limited to the second implementation
Example.In some embodiments of the invention, infrared light penetrates the setting location swap of filter layer 226 and white filter layer 124.
Fig. 3 is the profile for illustrating Image Sensor 300 according to the third embodiment of the invention.As shown in figure 3, image
Sensor 300 includes visible light receiver 110 and infrared light receiver 320, its mid-infrared light receiving division 220 includes alternating with each other
The infrared light that ground stacks penetrates filter layer 326,327 and white filter layer 324,325.It should be noted that infrared light penetrates optical filtering
Layer 326,327 penetrates filter layer 126 similar to infrared light, and white filter layer 324,325 is similar to white filter layer 124.Shadow
As the structure of sensor 300 is similar to the structure of Image Sensor 100, difference is that infrared light penetrates 126 quilt of filter layer
Infrared light penetrates filter layer 326 and is substituted with white filter layer 324, and white filter layer 124 penetrates filter layer 327 by infrared light
Substituted with white filter layer 325.It should be noted that in the present embodiment, the thickness of chromatic filter layer 114 is substantially equal to
Infrared light penetrates the summation of the thickness and the thickness of white filter layer 324 of filter layer 326, and in the present embodiment, infrared light is cut
Only the thickness of filter layer 116 is substantially equal to the thickness and the thickness of white filter layer 325 that infrared light penetrates filter layer 327
Summation.Similar to Image Sensor 100, there is the infrared light received by Image Sensor 300 preferable luminous intensity to meet
The demand of user.
It should be noted that infrared light penetrates filter layer 326,327 and the configuration of white filter layer 324,325 is not limited to
3rd embodiment.In some embodiments of the invention, infrared light penetrates the setting position of filter layer 326 and white filter layer 324
Put exchange.In some other embodiments of the present invention, infrared light penetrates the setting position of filter layer 327 and white filter layer 325
Put exchange.
Fig. 4 is the profile for illustrating Image Sensor 400 according to the fourth embodiment of the invention.As shown in figure 4, image
Sensor 400 includes visible light receiver 210 and infrared light receiver 420, its mid-infrared light receiving division 420 includes white and filters
Layer 424.It should be noted that white filter layer 424 is similar to white filter layer 124.The structure of Image Sensor 400 is similar to shadow
As the structure of sensor 300, difference is that flatness layer PL2 is only located in visible light receiver 210.It should be noted that
In the present embodiment, the summation of the thickness of chromatic filter layer 114 and the thickness of flatness layer PL2 is substantially equal to infrared light and penetrates filter
The summation of the thickness of photosphere 326 and the thickness of white filter layer 424.Similar to Image Sensor 300, the institute of Image Sensor 400
There is the infrared light received preferable luminous intensity to meet the demand of user.
It should be noted that infrared light penetrates filter layer 326,327 and the configuration of white filter layer 424,325 is not limited to
Fourth embodiment.In some embodiments of the invention, infrared light penetrates the setting position of filter layer 326 and white filter layer 424
Put exchange.In some other embodiments of the present invention, infrared light penetrates the setting position of filter layer 327 and white filter layer 325
Put exchange.
Fig. 5 is the profile for illustrating Image Sensor 500 according to the fifth embodiment of the invention.As shown in figure 5, image
Sensor 500 includes visible light receiver 510 and infrared light receiver 520, wherein visible light receiver 510 includes flatness layer
PL3, chromatic filter layer 514 and infrared cut of light filter layer 516, and infrared light receiver 520 includes flatness layer PL3, white
Filter layer 524 and infrared light penetrate filter layer 526.It should be noted that flatness layer PL3 is similar to flatness layer PL1, colorized optical filtering
Layer 514 is similar to chromatic filter layer 114, and infrared cut of light filter layer 516 is similar to infrared cut of light filter layer 116, white filter
Photosphere 524 is similar to white filter layer 124, and infrared light penetrates filter layer 526 and penetrates filter layer 126 similar to infrared light.Shadow
As the structure of sensor 500 is similar to the structure of Image Sensor 100, difference is chromatic filter layer 514 positioned at infrared
Between light light cutoff filter layer 516 and flatness layer PL3.It should be noted that in the present embodiment, the thickness of chromatic filter layer 514 with
The thickness of white filter layer 524 is substantially equal, and the thickness of infrared cut of light filter layer 516 penetrates filter layer with infrared light
526 thickness is substantially equal.Similar to Image Sensor 100, the infrared light received by Image Sensor 500 has preferable
Luminous intensity to meet the demand of user.
It should be noted that infrared light penetrates filter layer 526 and the configuration of white filter layer 524 is not limited to the 5th implementation
Example.In some embodiments of the invention, infrared light penetrates the setting location swap of filter layer 526 and white filter layer 524.
Fig. 6 is the profile for illustrating Image Sensor 600 according to the sixth embodiment of the invention.As shown in fig. 6, image
Sensor 600 includes visible light receiver 610 and infrared light receiver 620, wherein visible light receiver 610 includes flatness layer
PL4, and infrared light receiver 620 includes white filter layer 624.It should be noted that flatness layer PL4 is similar to flatness layer PL1, in vain
Color filtering optical layer 624 is similar to white filter layer 124.The structure of Image Sensor 600 is similar to the structure of Image Sensor 500,
Difference is that flatness layer PL4 is only located in visible light receiver 610.It should be noted that in the present embodiment, colorized optical filtering
The summation of the thickness of layer 514 and the thickness of flatness layer PL4 is substantially equal to the thickness of white filter layer 624.Similar to image
There is preferable luminous intensity to meet the demand of user for sensor 500, the infrared light received by Image Sensor 600.
It should be noted that infrared light penetrates filter layer 526 and the configuration of white filter layer 624 is not limited to the 6th implementation
Example.In some embodiments of the invention, infrared light penetrates the setting location swap of filter layer 526 and white filter layer 624.
Fig. 7 is the profile for illustrating Image Sensor 700 according to the seventh embodiment of the invention.As shown in fig. 7, image
Sensor 700 includes visible light receiver 510 and infrared light receiver 720, its mid-infrared light receiving division 720 includes alternating with each other
The infrared light that ground stacks penetrates filter layer 726,727 and white filter layer 724,725.It should be noted that infrared light penetrates optical filtering
Layer 726,727 penetrates filter layer 126 similar to infrared light, and white filter layer 724,725 is similar to white filter layer 124.Shadow
As the structure of sensor 700 is similar to the structure of Image Sensor 500, difference is that infrared light penetrates 526 quilt of filter layer
Infrared light penetrates filter layer 726 and is substituted with white filter layer 724, and white filter layer 524 penetrates filter layer 727 by infrared light
Substituted with white filter layer 725.It should be noted that in the present embodiment, the thickness of chromatic filter layer 514 is substantially equal to
Infrared light penetrates the summation of the thickness of filter layer 727 and the thickness of white filter layer 725, and infrared cut of light filter layer 516
Thickness is substantially equal to the summation that infrared light penetrates the thickness and the thickness of white filter layer 724 of filter layer 726.Similar to shadow
As sensor 500, there is the infrared light received by Image Sensor 700 preferable luminous intensity to meet the demand of user.
It should be noted that infrared light penetrates filter layer 726,727 and the configuration of white filter layer 724,725 is not limited to
3rd embodiment.In some embodiments of the invention, infrared light penetrates the setting position of filter layer 726 and white filter layer 724
Put exchange.In some other embodiments of the present invention, infrared light penetrates the setting position of filter layer 727 and white filter layer 725
Put exchange.
Fig. 8 is the profile for the Image Sensor 800 for illustrating the 8th embodiment according to the present invention.As shown in figure 8, image
Sensor 800 includes visible light receiver 610 and infrared light receiver 820, its mid-infrared light receiving division 820 includes white and filters
Layer 825.It should be noted that white filter layer 825 is similar to white filter layer 124.The structure of Image Sensor 800 is similar to shadow
As the structure of sensor 700, difference is that flatness layer PL4 is only located in visible light receiver 610.It should be noted that
In the present embodiment, the summation of the thickness of chromatic filter layer 514 and the thickness of flatness layer PL4 is substantially equal to infrared light and penetrates filter
The summation of the thickness of photosphere 727 and the thickness of white filter layer 825.Similar to Image Sensor 700, the institute of Image Sensor 800
There is the infrared light received preferable luminous intensity to meet the demand of user.
It should be noted that infrared light penetrates filter layer 726,727 and the configuration of white filter layer 724,825 is not limited to
8th embodiment.In some embodiments of the invention, infrared light penetrates the setting position of filter layer 726 and white filter layer 724
Put exchange.In some other embodiments of the present invention, infrared light penetrates the setting position of filter layer 727 and white filter layer 825
Put exchange.
In some embodiments of the invention, the quantity of white filter layer penetrates the quantity of filter layer with infrared light and is all more than
1, and white filter layer and infrared light penetrate filter layer and stack alternating with each otherly in infrared light sensed layer, but the implementation of the present invention
Example not limited to this.
It can be seen from the above, the present invention Image Sensor structure can effectively improve it is red received by Image Sensor
The luminous intensity of outer light thereby reduces and optical signalling (such as image letter is analyzed subsequently in other instruments to meet the demand of user
Number) when degree of difficulty.
Foregoing has outlined the feature of several embodiments, therefore those skilled in the art can know more about the aspect of the disclosure.
It will be understood by a person skilled in the art that arriving, it can design or change other processing procedures and knot as basis the disclosure easily
Structure, thereby realizes the target identical with these embodiments described herein and/or reaches the advantages of identical.People in the art
Member also it should be understood that, these equivalent construction are without departing from the spirit and scope of the disclosure, and they can not depart from this
Various changes, replacement and variation are made on the premise of open spirit and scope.
Claims (17)
1. a kind of Image Sensor, comprising：
One visible light receiver, to receive a visible ray；And
One infrared light receiver, to receive an infrared light, wherein the infrared light receiver includes：
One infrared light emitting diodes；
At least one white filter layer, is arranged on the infrared light emitting diodes；And
At least an infrared light penetrates filter layer, is arranged on the infrared light emitting diodes；
Wherein the infrared light through at least one white filter layer and an at least infrared light penetrate filter layer and by the infrared light
Light emitting diode is received.
2. Image Sensor as claimed in claim 1, the wherein visible light receiver include：
One visible light emitting diode；
One chromatic filter layer, is arranged on the visible light emitting diode；And
One infrared cut of light filter layer, is arranged on the visible light emitting diode；
Wherein the visible ray is through the chromatic filter layer and the infrared cut of light filter layer and by the visible light emitting diode
Received.
3. Image Sensor as claimed in claim 2, can with this positioned at the infrared light emitting diodes also comprising a wafer layer
See on light-emitting diode, a Part I of the wherein wafer layer is located in the visible light receiver, and the one of the wafer layer
Part II is located in the infrared light receiver.
4. Image Sensor as claimed in claim 3, wherein the infrared cut of light filter layer are located at the chromatic filter layer with being somebody's turn to do
Between visible light emitting diode, and the Part I of the wafer layer is located at the infrared cut of light filter layer and is sent out with the visible ray
Between optical diode.
5. Image Sensor as claimed in claim 3, the wherein chromatic filter layer are located at the infrared cut of light filter layer with being somebody's turn to do
Between visible light emitting diode, and the Part I of the wafer layer is located at the chromatic filter layer and the visible ray light-emitting diodes
Between pipe.
6. Image Sensor as claimed in claim 3, the wherein at least one white filter layer are located at this, at least an infrared light is worn
Between filter photosphere and the infrared light emitting diodes, and the Part II of the wafer layer is located at least one white filter layer
Between the infrared light emitting diodes.
It is located at this 7. Image Sensor as claimed in claim 3, wherein an at least infrared light penetrate filter layer at least one is white
Between color filtering optical layer and the infrared light emitting diodes, and the Part II of the wafer layer is located at this at least an infrared light penetrates
Between filter layer and the infrared light emitting diodes.
8. Image Sensor as claimed in claim 2, the wherein chromatic filter layer include a red filter unit, a green filter
Light unit and a blue filter unit.
9. Image Sensor as claimed in claim 2, also comprising a flatness layer, to provide a flat surfaces, the wherein coloured silk
Color filtering optical layer is arranged on the flat surfaces.
Connect 10. Image Sensor as claimed in claim 9, the wherein flatness layer are located at the visible light receiver with the infrared light
In receipts portion.
11. Image Sensor as claimed in claim 9, the wherein flatness layer are located in the visible light receiver.
12. Image Sensor as claimed in claim 1, infrared with this to assemble the visible ray also comprising a microlens layer
Light.
13. Image Sensor as claimed in claim 12, the wherein microlens layer are located at the superiors of the Image Sensor.
It is infrared with this that 14. Image Sensor as claimed in claim 12, the wherein microlens layer are located at the visible light receiver
In light receiver.
15. Image Sensor as claimed in claim 12, also comprising a wall, to provide a flat surfaces, wherein should
Microlens layer is arranged on the flat surfaces.
16. Image Sensor as claimed in claim 15, the wherein wall are located at the visible light receiver and the infrared light
In receiving division.
17. Image Sensor as claimed in claim 1, the quantity of the wherein at least one white filter layer is more than 1, and this is at least
The quantity that one infrared light penetrates filter layer is more than 1, and those white filter layers penetrate filter layer alternately heap with those infrared lights
Repeatedly on the infrared light emitting diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610934361.2A CN107994014B (en) | 2016-10-25 | 2016-10-25 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610934361.2A CN107994014B (en) | 2016-10-25 | 2016-10-25 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107994014A true CN107994014A (en) | 2018-05-04 |
| CN107994014B CN107994014B (en) | 2020-06-30 |
Family
ID=62028350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610934361.2A Active CN107994014B (en) | 2016-10-25 | 2016-10-25 | Image sensor |
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Citations (5)
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| EP0809298A1 (en) * | 1993-01-01 | 1997-11-26 | Canon Kabushiki Kaisha | Solid-state image pickup device |
| US20080087800A1 (en) * | 2006-10-04 | 2008-04-17 | Sony Corporation | Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device |
| CN102683363B (en) * | 2011-03-16 | 2015-03-25 | 株式会社东芝 | Solid-state imaging device and camera module |
| CN105390512A (en) * | 2014-08-22 | 2016-03-09 | 爱思开海力士有限公司 | Image sensor and electronic device having the same |
| CN105990378A (en) * | 2014-10-06 | 2016-10-05 | 采钰科技股份有限公司 | Image sensors and methods of forming the same |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0809298A1 (en) * | 1993-01-01 | 1997-11-26 | Canon Kabushiki Kaisha | Solid-state image pickup device |
| US20080087800A1 (en) * | 2006-10-04 | 2008-04-17 | Sony Corporation | Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device |
| CN102683363B (en) * | 2011-03-16 | 2015-03-25 | 株式会社东芝 | Solid-state imaging device and camera module |
| CN105390512A (en) * | 2014-08-22 | 2016-03-09 | 爱思开海力士有限公司 | Image sensor and electronic device having the same |
| CN105990378A (en) * | 2014-10-06 | 2016-10-05 | 采钰科技股份有限公司 | Image sensors and methods of forming the same |
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