CN107993938A - The reactive ion etching method of semiconductor - Google Patents
The reactive ion etching method of semiconductor Download PDFInfo
- Publication number
- CN107993938A CN107993938A CN201610945499.2A CN201610945499A CN107993938A CN 107993938 A CN107993938 A CN 107993938A CN 201610945499 A CN201610945499 A CN 201610945499A CN 107993938 A CN107993938 A CN 107993938A
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- China
- Prior art keywords
- gas
- passed
- semiconductor
- etching
- reactive ion
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000001020 plasma etching Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 46
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 12
- 239000011737 fluorine Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 72
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 210000002381 plasma Anatomy 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- -1 silicon oxide compound Chemical class 0.000 description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 3
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical class [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The reactive ion etching method of semiconductor of the present invention, including：The first gas for forming passivation layer with silicon is passed through to reaction chamber, after keeping scheduled duration, it is passed through fluorine-containing second gas, first stop being passed through the second gas after reaching first time point, stop being passed through the first gas again after reaching for the second time point, the first time point is earlier than second time point.It can improve etching and passivation efficiency, and the etching effect of semiconductor is good, so as to ensure the quality of product.
Description
Technical field
The present invention relates to the reactive ion etching (Reactive of field of semiconductor manufacture, more particularly to a kind of semiconductor
Ion Etching, RIE) method.
Background technology
In technical field of manufacturing semiconductors, it is often necessary to which patterned etch forms groove on silicon materials.In the prior art, lead to
All it is often the RIE lithographic techniques using dry method, fluorine plasma (Plasma) is produced by the gas containing fluorine element to etch silicon material
Material, then individually carries out the passivating technique processing around groove again.But such processing method needs to restart board, again
Arrange parameter, carries out next step again after etching gas need to be taken away with vacuum pump, this will substantially reduce the efficiency of etching, holds
Easily technique is caused to fluctuate, and be difficult to maintain the stabilization of subsequent process radio frequency.
Therefore a kind of reactive ion etching method of improved semiconductor is urgently provided to overcome disadvantages described above.
The content of the invention
It is an object of the invention to provide a kind of reactive ion etching method of semiconductor, it can improve etching and passivation effect
Rate, and the etching effect of semiconductor is good, so as to ensure the quality of product.
To achieve the above object, the reactive ion etching method of semiconductor of the present invention, including：To reaction chamber be passed through for
Silicon forms the first gas of passivation layer, after keeping scheduled duration, is passed through fluorine-containing second gas, first stops after reaching first time point
Only be passed through the second gas, reach and stop being passed through the first gas after the second time point again, the first time point earlier than
Second time point.
Compared with prior art, the reactive ion etching method of semiconductor of the invention is forming the process of etching pattern
In, keep being passed through the gas for forming passivation layer, which is passed through earlier than etching gas, and is later than etching gas and stops
Only it is passed through, therefore thin layer passivation is produced on the sidewall silicon while sidewall silicon of semiconductor carries out etching groove in semiconductor
Layer；And the time that is passed through of passivation gas is extended so that remaining fluorine plasma and for formed passivating film gas etc.
Ion exists jointly, and generation thin layer passivation layer can be reacted with sidewall silicon by forming plasma caused by passivating film gas, be prevented
Remaining etching plasma continues to etch with sidewall silicon, so as to reduce undercut effect and flute profile effect.The etching efficiency of the present invention
Height, and the etching effect of semiconductor is good, so as to ensure the quality of product.
It is preferred that the first gas is CO2、CO、O2、N2In any or any two or more combinations mixed gas.
It is preferred that the second gas is SF6、CF4、CHF4、NF3In any.
It is preferred that the flow proportional of the first gas and the second gas is 2:3~5:6.
It is preferred that the air pressure range in etching process is 3~400 millitorrs, radio-frequency power is 100~220 watts, rf frequency
For 60~80 megahertzs.
Inert gas is passed through it is preferred that further including to reaction chamber.
Embodiment
The reactive ion etching method of the semiconductor of the present invention is described further with reference to embodiment, but not therefore
The limitation present invention.For the reactive ion etching method of the semiconductor of the present invention during etching pattern is formed, holding is passed through use
In the gas for forming passivation layer, and the passivation gas is later than etching gas stopping, therefore reacts generation in the sidewall silicon of semiconductor
Thin layer passivation layer, so as to prevent remaining fluorine plasma from continuing to etch with sidewall silicon, so as to reduce undercut effect and flute profile effect.
In one embodiment of the reactive ion etching method of the semiconductor of the present invention, this method includes：To reaction chamber
The first gas for forming passivation layer with silicon is passed through, after keeping scheduled duration, fluorine-containing second gas is passed through, when reaching first
Between put after first stop being passed through second gas, reach and stop being passed through first gas after the second time point again, first time point is earlier than the
Two time points.The first gas is known as passivation gas, which is known as etching gas.Specifically, start in etching process
When, the passivation gas is passed first into, is passed through etching gas again after the scheduled time, so that etching process and passivating process are same
When complete.Moreover, at the end of etching, stop being passed through for etching gas first, then stop being passed through for passivation gas again, so
Benefit be to prevent remaining etching plasma from continuing to etch with sidewall silicon, so as to reduce undercut effect and flute profile effect.
Specifically, the specific duration for being passed through etching gas and passivation gas is not restricted by, and can be carried out in response to different product
Actual adjustment.
Specifically, which is SF6、CF4、CHF4、NF3In any, the son such as the fluorine produced in etching process is right
Sidewall silicon performs etching, so as to form pattern or groove.
Specifically, which is CO2、CO、O2、N2In any or any two or more combinations mixed gas, its
In, CO2During reactive ion etching, form carbon plasma and oxygen plasma, carbon plasma and oxygen plasma respectively with Si
Reaction generation carbon-silicon compound (such as SiC) and silicon oxide compound (such as SiO2)；CO forms carbon etc. during reactive ion etching
Ion and oxygen plasma, carbon plasma and oxygen plasma react generation carbon-silicon compound and silicon oxide compound with Si respectively；O2
During reactive ion etching, oxygen plasma, oxygen plasma and Si reaction generation silicon oxide compounds are formed；N2Carved in reactive ion
During erosion, nitrogen plasma, nitrogen plasma and Si reaction generation silicon-nitrogen compounds (such as Si are formed3N4).Since the son such as fluorine is to carbon
Etch rate of the etch rate of silicon compound, silicon oxide compound or silicon-nitrogen compound etc. considerably slower than F plasmas to Si, because
This, these carbon-silicon compounds, silicon oxide compound, silicon-nitrogen compound are referred to as passivation layer.
As a preferred embodiment, flow-rate ratio Liu of passivation gas and etching gas is 2:3~5:6, in etching process
Air pressure range be 3~400 millitorrs, radio-frequency power is 100~220 watts, and rf frequency is 60~80 megahertzs.The thing being etched
The temperature of body is at 20~150 degree.It is preferred that the reactive ion etching method is used to etch containing silicon semiconductor so as on the semiconductor
Deep silicon trench is formed, the etching of deep silicon trench uses stationary state deep silicon etching technique.
Alternatively, inert gas such as argon gas can also be passed through in etching process.
Here is the introduction of the etching technics of several embodiments of the present invention.
For example, when etching beginning, CO is passed through to reaction chamber first2Gas, after having spent the scheduled time, then is passed through SF6Gas
Body, SF6The flow of gas is 450sccm, CO2The flow of gas is 700sccm, and the air pressure range in reaction chamber is 150 millitorrs,
Radio-frequency power is 200 watts, and rf frequency is 60 megahertzs, and the temperature for the object being etched is 80 degree.After etching, first stop
Only SF6Gas is passed through, then stops CO2Gas is passed through.
For another example, when etching beginning, CO is passed through to reaction chamber first2And O2Mixed gas, after having spent the scheduled time, then leads to
Enter SF6Gas, SF6The flow of gas is 500sccm, CO2And O2The flow of mixed gas is 750sccm, the air pressure in reaction chamber
Scope is 150 millitorrs, and radio-frequency power is 150 watts, and rf frequency is 75 megahertzs, and the temperature for the object being etched is 100 degree.
After etching, first stop SF6Gas is passed through, then stops CO2And O2Mixed gas is passed through.
And for example, when etching beginning, N is passed through to reaction chamber first2Gas, after having spent the scheduled time, then is passed through CF4Gas,
CF4The flow of gas is 300sccm, N2The flow of gas is 400sccm, and the air pressure range in reaction chamber is 200 millitorrs, radio frequency
Power is 100 watts, and rf frequency is 80 megahertzs, and the temperature for the object being etched is 120 degree.After etching, first stop
CF4Gas is passed through, then stops N2Gas is passed through.
In the present invention, the species of etching gas and passivation gas is unrestricted, as long as (being used including the gas containing fluorine element
Si is performed etching in producing F plasmas) and to form for being reacted with Si the gas of passivation layer.
During etching pattern is formed, holding is passed through for shape the reactive ion etching method of the semiconductor of the present invention
Into the gas of passivation layer, which is passed through earlier than etching gas, and is later than etching gas and stops being passed through, therefore is partly leading
The sidewall silicon of body carries out producing thin layer passivation layer on the sidewall silicon of semiconductor while etching groove；And passivation gas is logical
The angle of incidence is extended so that remaining fluorine plasma and the plasma of the gas for forming passivating film exist jointly, are formed blunt
Generation thin layer passivation layer can be reacted with sidewall silicon by changing plasma caused by film gas, prevent remaining etching plasma and silicon
Side wall continues to etch, so as to reduce undercut effect and flute profile effect.
The above disclosed right for being only presently preferred embodiments of the present invention, the present invention cannot being limited with this certainly
Scope, therefore the equivalent variations made according to scope of the present invention patent, are still within the scope of the present invention.
Claims (6)
- A kind of 1. reactive ion etching method of semiconductor, it is characterised in that including：The first gas for forming passivation layer with silicon is passed through to reaction chamber, after keeping scheduled duration, is passed through the second fluorine-containing gas Body, first stops being passed through the second gas, stops being passed through described first again after reaching for the second time point after reaching first time point Gas, the first time point is earlier than second time point.
- 2. the reactive ion etching method of semiconductor as claimed in claim 1, it is characterised in that：The first gas is CO2、 CO、O2、N2In any or any two or more combinations mixed gas.
- 3. the reactive ion etching method of semiconductor as claimed in claim 1, it is characterised in that：The second gas is SF6、 CF4、CHF4、NF3In any.
- 4. the reactive ion etching method of semiconductor as claimed in claim 1, it is characterised in that：The first gas and described The flow proportional of second gas is 2:3~5:6.
- 5. the reactive ion etching method of semiconductor as claimed in claim 1, it is characterised in that：Air pressure model in etching process It is 100~220 watts to enclose for 3~400 millitorrs, radio-frequency power, and rf frequency is 60~80 megahertzs.
- 6. the reactive ion etching method of semiconductor as claimed in claim 1, it is characterised in that：Further include and be passed through to reaction chamber Inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610945499.2A CN107993938A (en) | 2016-10-26 | 2016-10-26 | The reactive ion etching method of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610945499.2A CN107993938A (en) | 2016-10-26 | 2016-10-26 | The reactive ion etching method of semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN107993938A true CN107993938A (en) | 2018-05-04 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610945499.2A Pending CN107993938A (en) | 2016-10-26 | 2016-10-26 | The reactive ion etching method of semiconductor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130167A (en) * | 1999-03-18 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Method of preventing corrosion of a metal structure exposed in a non-fully landed via |
| KR100630978B1 (en) * | 2001-04-23 | 2006-10-04 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor device and method of fabricating the same |
| CN101928941A (en) * | 2009-06-23 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Reactive ion etching method for etching silicon |
| CN101988196A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas-flow control device thereof |
-
2016
- 2016-10-26 CN CN201610945499.2A patent/CN107993938A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130167A (en) * | 1999-03-18 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Method of preventing corrosion of a metal structure exposed in a non-fully landed via |
| KR100630978B1 (en) * | 2001-04-23 | 2006-10-04 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor device and method of fabricating the same |
| CN101928941A (en) * | 2009-06-23 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Reactive ion etching method for etching silicon |
| CN101988196A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas-flow control device thereof |
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Application publication date: 20180504 |