CN107976263B - Photothermal reflection temperature measurement method and system - Google Patents
Photothermal reflection temperature measurement method and system Download PDFInfo
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- CN107976263B CN107976263B CN201711137052.3A CN201711137052A CN107976263B CN 107976263 B CN107976263 B CN 107976263B CN 201711137052 A CN201711137052 A CN 201711137052A CN 107976263 B CN107976263 B CN 107976263B
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
Abstract
The invention discloses a photothermal reactionA fire test method and a system belong to the technical field of temperature test and comprise the following steps: performing photo-thermal reflection coefficient CTR calibration on the area to be measured; modulating emergent light of light sources with different wavelengths, and projecting the modulated emergent light to an area to be measured; the detector receives the reflected light of the area to be detected and demodulates the reflected light to obtain signals of the reflected light with different wavelengths; and calculating signals of the reflected light with different wavelengths to obtain temperature test information. The invention utilizes the emergent light with a plurality of wavelengths to simultaneously measure the temperature of the area to be measured comprising a plurality of different materials, and selects C according to the characteristics of the different materialsTRThe maximum wavelength is used for temperature measurement, and C is reduced under the condition of simultaneously measuring multiple materialsTRLoss, improved photothermal reflection temperature measurement accuracy, and temperature measurement efficiency.
Description
Technical Field
The invention relates to the technical field of temperature testing, in particular to a photothermal reflection temperature measurement method and system.
Background
The photothermal reflection temperature measurement technology is a non-contact temperature measurement technology, and is based on the photothermal reflection (thermal reflection) phenomenon. The photothermal reflection phenomenon is basically characterized in that the reflectivity of an object changes with the temperature of the object. The change in reflectance with temperature can be considered linear and can therefore be characterized by a coefficient of rate of change, known as the photothermal reflectance or the photothermal reflectance/calibration coefficient, in either κ or CTRIs defined as:
in the formula, R is a reference reflectivity, Δ R is a reflectivity variation, and Δ T is a temperature variation. For most metal and semiconductor materials, CTRRelated to the material, wavelength of the incident light, and angle of incidence. If the surface of the object has a multi-layer structure, the material combination of each layer structure and the interference of light among the multi-layer materials can directly influence CTRThe value of (c). Application of temperature measurement based on photothermal reflection phenomenon, through CTRAs can be seen from the calculation formula of (A), CTRThe larger the absolute value, the larger the change in reflectance under the same temperature change, so that it is easier to achieve high-accuracy temperature measurement. CTRThe smaller the absolute value of (a), the smaller the signal-to-noise ratio obtained by the measurement system, so that the temperature measurement accuracy is limited.
Influence CTRThe factors of (a) are many, but most important are the material being measured and the wavelength of the incident light. At present, it is common practice to select an appropriate measurement wavelength for each type or model of sample, and perform CTRCalibration (C)TRcalibretion) and using calibrated CTRTemperature measurements are taken. At CTRIn the known case, the temperature can be calculated by measuring the change in the reflectivity of the object according to the following formula
In the formula, TxTo be measured for temperature, T0For reference temperature, RxIs the reflectivity at the temperature to be measured, R0Is the reflectance at the reference temperature. A beam of detection light is projected on the surface of the object to be measured, and then the change rate of the intensity of the reflected light is measured by using a detector, so that the temperature measurement can be realized.
Disclosure of Invention
An object of an embodiment of the present invention is to provide a photothermal reflection temperature measurement method, which aims to solve the problem that it is difficult to ensure good measurement effects of different materials when the region to be measured includes multiple different materials, and reduce C by measuring multiple different materials simultaneously with multiple wavelengths of probe lightTRLoss, and temperature measurement accuracy when multiple different materials are measured simultaneously by photothermal reflection is improved.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a photothermal reflectance thermometry comprising the steps of:
performing photo-thermal reflection coefficient C on the region to be measuredTRCalibrating;
modulating emergent light of light sources with different wavelengths, and projecting the modulated emergent light to an area to be measured;
receiving reflected light of a region to be detected, and demodulating the reflected light to obtain signals of the reflected light with different wavelengths;
and calculating signals of the reflected light with different wavelengths to obtain temperature test information.
Further, the photothermal reflection coefficient C is carried out on the region to be detectedTRThe calibration comprises the following steps:
adjusting the temperature of the area to be measured under the same condition of photothermal reflection temperature measurement;
after heat balance, measuring the temperature of the temperature-adjusted region to be measured, and simultaneously measuring signals of reflected light with different wavelengths in the region to be measured to obtain reflectivity;
the photothermal reflection coefficient C of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measuredTR。
Further, the number of the light sources with different wavelengths is at least two.
Further, the modulation method of the emergent light comprises switch modulation and sine amplitude modulation; the demodulation method of the reflected light comprises a synchronization mechanism and coherent demodulation.
Further, the modulation of the emergent light is modulated by an excitation signal of a control light source or by an external modulator of the light source.
Further, before the demodulating the reflected light, the method further includes:
and converting the optical signal of the reflected light into an analog signal or a digital signal, and demodulating the converted reflected light.
Further, the photothermal reflection coefficient CTR of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measured and is as follows:
and fitting and calculating according to the temperature and the reflectivity of the area to be measured which are measured at least twice to obtain the photothermal reflection coefficient CTR of the area to be measured.
Further, the temperature of the region to be measured is subjected to a frequency f0Is modulated by a signal of (f), and0if the modulation frequency is greater than the upper limit of the detection frequency of the detection device, the modulation frequency of the light source with different wavelengths is f0+f1，f0+f2，...，f0+fNWherein f is1，f2，...，fNAnd the two orthogonal signals are both smaller than the upper limit of the bandwidth of the detector.
The embodiment of the invention also discloses a photothermal reflection temperature measurement system, which comprises a plurality of light sources with different wavelengths; emergent light of the light source passes through a light source modulation device for modulating the emergent light and irradiates an area to be measured through an optical component for transmitting the emergent light; the emergent light irradiates the reflected light formed after the region to be detected is transmitted to a detection device for receiving and converting the optical signal of the reflected light, and a signal processing device for processing the signal of the detection device.
Further, the detection device can convert the reflected light optical signal into a digital signal or an analog signal; the signal processing device is capable of processing digital signals or analog signals.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: (1) the photothermal reflection temperature measurement method provided by the embodiment of the invention utilizes the emergent light with multiple wavelengths to simultaneously measure the temperature of the area to be measured comprising multiple different materials, and selects C according to the characteristics of the different materialsTRThe maximum wavelength is used for temperature measurement, and C is reduced under the condition of simultaneously measuring multiple materialsTRLoss, the temperature measurement accuracy of photothermal reflection and the temperature measurement efficiency are improved; (2) the temperature measurement system provided by the embodiment of the invention has a simple structure, can be realized by adopting a conventional device, is suitable for large-scale popularization and use, can simultaneously carry out photothermal reflection temperature measurement on the to-be-measured area comprising various materials through a plurality of light sources with different wavelengths, and improves the accuracy rate and the temperature measurement efficiency of photothermal reflection temperature measurement.
Drawings
FIG. 1 is a flow chart of a photothermal reflection thermometry method according to a second embodiment of the present invention;
FIG. 2 shows the photothermal reflectance C of step S101 in FIG. 1TRA flow chart of calibration;
FIG. 3 is a flow chart of a photothermal reflection thermometry method according to a third embodiment of the present invention;
FIG. 4 shows photothermal reflection in step S201 of FIG. 3Coefficient CTRA flow chart of calibration;
FIG. 5 is a schematic view of a photothermal reflection thermometry system according to a fifth embodiment of the present invention;
FIG. 6 is a schematic view of a photothermal reflection thermometry system according to a sixth embodiment of the present invention;
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Example one
The photothermal reflection temperature measurement method in this embodiment is detailed as follows:
performing photo-thermal reflection coefficient C on the region to be measuredTRCalibrating;
modulating emergent light of light sources with different wavelengths, and projecting the modulated emergent light to an area to be measured;
receiving reflected light of a region to be detected, and demodulating the reflected light to obtain reflected light signals with different wavelengths;
and calculating the reflected light signals with different wavelengths to obtain temperature test information.
The photothermal reflection temperature measurement method of the embodiment simultaneously measures the temperature of the region to be measured including various different materials by using multi-wavelength probe light, and selects C according to the characteristics of the different materialsTRThe maximum wavelength is used for temperature measurement, and C is reduced under the condition of simultaneously measuring multiple materialsTRLoss and improved photothermal reflection temperature measurementAccuracy, and temperature measurement efficiency.
Further, the photothermal reflection coefficient C of the region to be measuredTRThe calibration comprises the following steps:
adjusting the temperature of the area to be measured under the same condition of photothermal reflection temperature measurement;
after heat balance, measuring the temperature of the area to be measured after temperature adjustment, and simultaneously measuring signals of reflected light with different wavelengths in the area to be measured to obtain reflectivity;
the photothermal reflection coefficient C of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measuredTR。
Furthermore, the number of the light sources with different wavelengths is at least two, and emergent light with a plurality of different wavelengths can be obtained.
Further, the modulation method of the emergent light comprises switch modulation and sine amplitude modulation; the demodulation method of the reflected light comprises a synchronization mechanism and coherent demodulation.
Further, the modulation of the emergent light is modulated by an excitation signal of a control light source or by an external modulator of the light source. Under the condition that the light source works continuously, emergent light can be modulated through the external modulator of the light source.
Further, before the demodulating the reflected light, the method further includes:
and converting the optical signal of the reflected light into an analog signal or a digital signal, and demodulating the converted reflected light. After the optical signal is converted into an analog signal or a digital signal, the calculation is more convenient.
Further, the photothermal reflection coefficient CTR of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measured and is as follows:
and fitting and calculating according to the temperature and the reflectivity of the area to be measured which are measured at least twice to obtain the photothermal reflection coefficient CTR of the area to be measured.
Fitting the multiple data to obtain CTRAnd is more accurate.
Further, the temperature of the region to be measured is subjected to a frequency f0Is modulated by a signal of (f), and0if the frequency is greater than the upper limit of the detection frequency of the detection device, the frequency is determinedLight source with different wavelengths has modulation frequency f0+f1，f0+f2，...，f0+fNWherein f is1，f2，...，fNAnd the two orthogonal frequencies are both smaller than the upper limit of the detection frequency bandwidth of the detection device. Temperature measurement under the condition that the temperature change frequency is greater than the detection frequency of the detection device can be realized.
Example two
Referring to fig. 1, the photothermal reflection temperature measurement method in the present embodiment is detailed as follows:
s101: performing photo-thermal reflection coefficient C on the region to be measuredTRCalibrating;
s102: the method comprises the steps of modulating the sine amplitude of emergent light of two light sources with different wavelengths by controlling an excitation signal of a light source, and projecting the modulated emergent light to an area to be measured;
s103: receiving reflected light of a region to be detected, converting an optical signal of the reflected light into a digital signal, and demodulating the digital signal by a coherent demodulation method to obtain digital signals of the reflected light with different wavelengths;
s104: and calculating the digital signals of the reflected light with different wavelengths to obtain temperature test information.
Preferably, referring to fig. 2, step S101 includes:
s1011: adjusting the temperature of the area to be measured under the same condition of photothermal reflection temperature measurement;
s1012: after heat balance, measuring the temperature of the temperature-adjusted region to be measured, and simultaneously measuring reflected light with different wavelengths of the region to be measured to obtain reflectivity;
s1013: the photothermal reflection coefficient C of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measuredTR。
Preferably, step S101 is repeated 5 times to obtain the temperature and the reflectance of the reflected light signals with different wavelengths of 5 groups of regions to be measured, and the 5 groups of data are fit-calculated to obtain the maximum photothermal reflectance coefficient C of different materials in the region to be measuredTRAnd the wavelength of the corresponding light.
Preferably, two LEDs with wavelengths of 470nm and 623nm, respectively, are selected as the first light source and the second light source, respectively.
Preferably, the temperature of the area to be measured is carried out at a frequency f0Is modulated by a signal of (f), and0if the frequency is greater than the upper limit of the detection frequency of the detection device, the frequencies of the first light source and the second light source are respectively f0+f1，f0+f2Modulation of (f)1，f2Are orthogonal and are all smaller than the upper limit of the detection frequency bandwidth of the detection device. If the temperature of the area to be measured is modulated to be periodically changed, the modulation frequency f0And the temperature change can not be measured by the detector when the temperature is higher than the upper limit of the detection frequency bandwidth of the detection device. In this case, the light source may be applied with a frequency f0+f1，f0+f2Modulation of (2), wherein f1，f2And are orthogonal and are all smaller than the upper limit of the detection frequency bandwidth of the detection device. At the moment, the intensity of reflected light is influenced by the intensity change of the light source and the change of the reflectivity caused by the temperature change of the area to be measured, and the reflected light contains a difference frequency signal component f1，f2These frequencies can be captured by a detector, which then uses the corresponding frequencies f1，f2And (4) demodulating to calculate the amplitude of the temperature change to be measured.
In the photothermal reflection temperature measurement method in this embodiment, the emergent light with two different wavelengths of 470nm and 623nm is used to simultaneously measure the temperature of the region to be measured including a plurality of different materials, and since the region to be measured is subjected to CTRCalibration, so that C can be selected according to the characteristics of different materials in the region to be measuredTRThe larger wavelength is used for temperature measurement, and C under the condition of simultaneously measuring multiple materials is reducedTRLoss, and the accuracy and efficiency of the photothermal reflection temperature measurement are improved. And the temperature measurement that the temperature modulation frequency of the region to be measured is greater than the upper limit of the detection frequency bandwidth of the detection device can be realized by modulating the frequency of the light source.
EXAMPLE III
Referring to fig. 3, the photothermal reflection temperature measurement method in the present embodiment is detailed as follows:
s201: performing photo-thermal reflection coefficient C on the region to be measuredTRCalibrating;
s202: the method comprises the steps that emergent light of two light sources with different wavelengths is subjected to on-off modulation by controlling an external light source modulator, and the modulated emergent light beams are projected to an area to be measured;
s203: receiving reflected light with different wavelengths of a region to be detected through a synchronization mechanism, and converting the reflected light into a digital signal of the reflected light through a low-pass filter and an A/D converter;
s204: and calculating the digital signals of the reflected light with different wavelengths to obtain temperature test information.
Preferably, referring to fig. 4, step S201 includes:
s2011: adjusting the temperature of the area to be measured under the same condition of photothermal reflection temperature measurement;
s2012: after heat balance, measuring the temperature of the temperature-adjusted region to be measured, and simultaneously measuring reflected light with different wavelengths of the region to be measured to obtain reflectivity;
s2013: the photothermal reflection coefficient C of the area to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the area to be measuredTR。
Preferably, step S201 is repeated 5 times to obtain the temperature and the reflectance of the reflected light signals with different wavelengths of 5 groups of regions to be measured, and the 5 groups of data are fit-calculated to obtain the maximum photothermal reflectance coefficient C of different materials in the region to be measuredTRAnd the wavelength of the corresponding light.
Preferably, two lasers with wavelengths of 532nm and 589nm, respectively, are selected as the first light source and the second light source, respectively.
In the photothermal reflection temperature measurement method in this embodiment, two lasers with different wavelengths of 532nm and 589nm are used as light sources, so that the propagation direction of emergent light is accurate, and the light intensity is stable. The emergent light simultaneously measures the temperature of the region to be measured containing various different materials, and the region to be measured is subjected to the temperature measurement CTRCalibration, so that C can be selected according to the characteristics of different materials in the region to be measuredTRThe larger wavelength is used for temperature measurement, and C under the condition of simultaneously measuring multiple materials is reducedTRLoss, and the accuracy and efficiency of the photothermal reflection temperature measurement are improved. And the modulation frequency of the temperature of the area to be measured can be greater than that of the detector band by modulating the frequency of the light sourceTemperature testing for wide ceiling case.
Example four
The photothermal reflection temperature measurement system in the embodiment includes a plurality of light sources with different wavelengths; emergent light of the light source passes through a light source modulation device for modulating the emergent light and irradiates an area to be measured through an optical component for transmitting the emergent light; the emergent light irradiates the reflected light formed after the region to be detected is transmitted to a detection device for receiving and converting the optical signal of the reflected light, and a signal processing device for processing the signal of the detection device.
The temperature measurement system in this embodiment simple structure adopts conventional device to realize, is suitable for the scale to promote and use, can carry out the photothermal reflection temperature measurement to the region of awaiting measuring including multiple material simultaneously through the light source of a plurality of different wavelength, improves the rate of accuracy and the temperature measurement efficiency of photothermal reflection temperature measurement.
Furthermore, the detection device can convert the reflected light into a digital signal or an analog signal, and the signal processing device can process the digital signal or the analog signal, so that the calculation efficiency of the temperature of the area to be measured can be improved.
EXAMPLE five
Referring to fig. 5, in correspondence to the photothermal reflection temperature measurement method in the second embodiment, the embodiment discloses a photothermal reflection temperature measurement system including: the device comprises a first light source, a second light source, a signal generator for modulating an emergent light signal of the light source, an optical assembly for transmitting emergent light and reflected light, a CCD camera for receiving the reflected light, and a digital signal processing device for processing a digital signal output by the CCD camera.
Preferably, the optical assembly comprises a collimator for collimating the outgoing light from the light source. The collimator is used for dividing emergent light emitted by the light source into two beams, and the lens is used for collecting light.
Preferably, the first light source is an LED with a wavelength of 470nm and the second light source is an LED with a wavelength of 623 nm.
Specifically, first, C is performed using the first light source and the second light sourceTRCalibrating and fitting to obtainMaximum photothermal reflectance C of different materials in a measuring regionTRAnd the wavelength of the corresponding light. Secondly, the signal generator respectively uses the frequency f to the first light source, the second light source and the region to be measured0+f1，f0+f2，f0Is subjected to sinusoidal amplitude modulation, and f0Greater than the upper limit of imaging frequency bandwidth of CCD camera, and modulated signals are sin (2 pi (f) respectively0+f1)t)、cos(2π(f0+f2)t)、sin(2πf0t). And thirdly, the emergent light of the first light source and the second light source irradiates to the beam splitter after the direction of the emergent light is calibrated by the collimator, and the emergent light of the first light source and the second light source irradiates to the area to be measured through the lens after passing through the beam splitter. Then, the emergent light irradiates on the region to be measured to form reflected light, the reflected light irradiates to the CCD camera through the same optical path as the emergent light, and the CCD camera converts the optical signal of the reflected light into a digital signal. Finally, sine and cosine signals used by the digital signal processing device are respectively multiplied by digital signals converted by the CCD camera and low-pass filtered to obtain in-phase and quadrature components which respectively correspond to signals with wavelengths of 470nm of the first light source and 623nm of the second light source, and C with the corresponding wavelength is utilizedTRThe temperature change can be calculated, and the photothermal reflection temperature measurement is realized.
The light path structure of the photothermal reflection temperature measurement system in the embodiment is clear and simple, the conventional optical assembly, the detection device and the signal processing device can be adopted, photothermal reflection temperature measurement can be simultaneously carried out on the to-be-measured area comprising various materials through light sources with a plurality of different wavelengths, and the accuracy and the temperature measurement efficiency of the photothermal reflection temperature measurement are improved.
EXAMPLE six
Referring to fig. 6, in correspondence to the photothermal reflection temperature measurement method in the third embodiment, the embodiment discloses a photothermal reflection temperature measurement system including: the temperature measuring device comprises a first light source, a second light source, a signal generator and a shutter for modulating emergent light of the light sources, an optical assembly for transmitting emergent light and reflected light, a photodiode for receiving the reflected light, a low-pass filter and an A/D converter for converting an analog signal of the photodiode into a digital signal, and a digital signal processing device for calculating a measured temperature.
Preferably, the optical assembly includes a beam splitter and a mirror for splitting outgoing light from the light source into two beams.
Preferably, the first light source is a 532nm wavelength laser and the second light source is a 589nm wavelength laser.
Specifically, first, C is performed using the first light source and the second light sourceTRCalibrating and fitting to obtain maximum photothermal reflection coefficients C of different materials in the region to be measuredTRAnd the wavelength of the corresponding light. Secondly, the signal generator carries out switch modulation and synchronization mechanism on the first light source, the second light source and the photodiode, so that the photodiode receives emergent light which is only emitted by the first light source or the second light source in a certain time period. And thirdly, emergent light of the first light source or the second light source irradiates on the area to be measured through an optical assembly consisting of the beam splitter and the reflector. Then, the emergent light irradiates on the region to be measured to form reflected light, and irradiates on a photodiode, and the photodiode converts the optical signal of the reflected light into an electric signal. Finally, the electrical signal converted by the photodiode is converted into a digital signal by a low pass filter and an A/D converter, and C with a corresponding wavelength is usedTRThe temperature change can be calculated, and the photothermal reflection temperature measurement is realized.
The light path structure of the photothermal reflection temperature measurement system in the embodiment is clear and simple, and can be realized by adopting a conventional optical assembly, a detection device and a signal processing device. The laser is used as a light source, so that the transmission direction of emergent light is accurate, and the light intensity is stable. The temperature measurement system can simultaneously carry out photothermal reflection temperature measurement on the to-be-measured area comprising multiple materials through the light sources with different wavelengths, and improves the accuracy and the temperature measurement efficiency of the photothermal reflection temperature measurement.
The foregoing is illustrative of example embodiments and is not to be construed as limiting thereof. Although a few example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the novel teachings and advantages of this disclosure. Accordingly, all such modifications are intended to be included within the scope of this disclosure as defined in the claims. Therefore, it is to be understood that the foregoing is illustrative of various example embodiments and is not to be construed as limited to the specific example embodiments disclosed, and that modifications to the disclosed example embodiments, as well as other example embodiments, are intended to be included within the scope of the appended claims.
Claims (7)
1. The photothermal reflection temperature measurement method is characterized by comprising the following steps:
performing photo-thermal reflection coefficient C on the region to be measuredTRCalibrating;
modulating emergent light of light sources with different wavelengths, and projecting the modulated emergent light to an area to be measured; the modulation method of the emergent light comprises switch modulation and sine amplitude modulation; wherein C is selected according to the characteristics of different materialsTRThe maximum wavelength is used for temperature measurement;
receiving reflected light of a region to be detected, and demodulating the reflected light to obtain signals of the reflected light with different wavelengths; the demodulation method of the reflected light comprises a synchronization mechanism and coherent demodulation;
calculating signals of reflected light with different wavelengths to obtain temperature test information;
the temperature receiving frequency of the area to be measured is f0Is modulated by a signal of (f), and0if the modulation frequency is greater than the upper limit of the detection frequency of the detection device, the modulation frequency of the light source with different wavelengths is f0+f1，f0+f2，...，f0+fNWherein f is1，f2，...，fNEvery two of the orthogonal frequency bands are smaller than the upper limit of the detection frequency bandwidth of the detection device;
performing photo-thermal reflection coefficient C on the region to be detectedTRThe calibration comprises the following steps:
adjusting the temperature of the area to be measured under the same condition of photothermal reflection temperature measurement;
after heat balance, measuring the temperature of the temperature-adjusted region to be measured, and simultaneously measuring signals of reflected light with different wavelengths in the region to be measured to obtain reflectivity;
according to the temperature of the area to be measuredAnd obtaining the photothermal reflection coefficient C of the area to be measured by the fitting calculation of the reflectivityTR。
2. The photothermal reflection thermometry method of claim 1, wherein said number of different wavelength light sources is at least two.
3. The photothermal reflection thermometry method according to claim 1, wherein the modulation of the outgoing light is modulated by an excitation signal of a control light source or by an external modulator of the light source.
4. The photothermal reflection thermometry method of claim 1, wherein prior to said demodulating reflected light, further comprising:
and converting the optical signal of the reflected light into an analog signal or a digital signal, and demodulating the converted reflected light.
5. The photothermal reflection temperature measurement method according to claim 1, wherein the photothermal reflection coefficient C of the region to be measured is obtained by fitting calculation according to the temperature and the reflectivity of the region to be measuredTRComprises the following steps:
fitting and calculating to obtain the photothermal reflection coefficient C of the region to be measured according to the temperature and the reflectivity of the region to be measured which are measured at least twiceTR。
6. A photothermal reflection temperature measurement system is characterized by comprising a plurality of light sources with different wavelengths; emergent light of the light source passes through a light source modulation device for modulating the emergent light and irradiates an area to be measured through an optical component for transmitting the emergent light; reflected light formed after the emergent light irradiates the region to be detected is transmitted to a detection device for receiving and converting an optical signal of the reflected light and a signal processing device for processing the signal of the detection device;
the photothermal reflection thermometry system includes a structure for performing the photothermal reflection thermometry method according to any one of claims 1 to 5.
7. The photothermal reflection thermometry system of claim 6, wherein said detecting means is capable of converting the optical signal of the reflected light into a digital signal or an analog signal; the signal processing device is capable of processing digital signals or analog signals.
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