CN107963896A - A kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement - Google Patents
A kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement Download PDFInfo
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Abstract
The present invention provides a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, and in parts by weight, which includes the following raw material component：30 80 parts of calcium carbonate, 5 10 parts of aluminium oxide, 10 20 parts of sodium oxide molybdena, 5 15 parts of calcium oxide, 5 10 parts of magnesia, 5 15 parts of cupric oxide, 5 10 parts of zirconium oxide, 5 10 parts of titanium oxide, 10 20 parts of nickel oxide, 10 30 parts of carborundum, 10 20 parts of silica flour, 0 40 parts of silica 1,5 10 parts of boron oxide, 5 20 parts of gadolinium oxide, 5 10 parts of potassium titanate crystal whisker, 20 40 parts of polyethylene glycol, 10 30 parts of organosilicon coupling compound, 5 10 parts of epoxy resin, 40 90 parts of water.The semiconductor crystal stove insulating layer reparation high temperature resistant cement of the present invention, with strong cohesive property, high temperature resistant and corrosion resistant characteristic, repaired suitable for semiconductor crystal high-temperature growth furnace, and the method for preparing this high-temperature cement is easy to operate, it is of low cost, it is environmentally protective.
Description
Technical field
The present invention relates to a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, belong to semiconductor crystal stove technology
Field.
Background technology
In recent years, China's semiconductor industry is quickly grown, demand rapid development of the market to semi-conducting material.Partly leading
In body Material Manufacturing Process, crystal-pulling is a very important link, semiconductor single-crystal growth in Semiconductor Materials Industry
Need to carry out in 1000 DEG C -3000 DEG C of hot environment for a long time, the thermal insulation material used in this process high temperature single crystal growing furnace
It is the essential condition for ensureing high-quality monocrystalline.Since the thermal insulation material has the characteristics that light weight and property are crisp, while crystal growth
Need to carry out under the high temperature conditions, long-time service is easily damaged, so as to influence the growth of semiconductor monocrystal.Thermal insulation material damages
How to be repaired after bad, it has also become a urgent problem to be solved in monocrystalline production.For this problem, domestic corporation all uses
The high-temperature cement of external import repairs the thermal insulation material, expensive due to the high-temperature cement, plus cannot be timely
The supply of material, influences to produce.At present, the high-temperature cement of domestic production can only be 300 DEG C -600 DEG C resistance to, does not reach semiconductor single-crystal growth work
The temperature requirement of skill.So a kind of semiconductor crystal stove insulating layer reparation of our company's independent research with high-temperature cement come surrogate outside
Product, and actually use and reach and external high-temperature cement same effect.
The content of the invention
In view of the problems of the above-mentioned prior art, the object of the present invention is to provide a kind of semiconductor crystal stove insulating layer to repair
Be multiplexed high temperature resistant cement, can high temperature resistant, reach and external high-temperature cement same effect.
The purpose of the present invention is achieved by the following technical programs：
A kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, in parts by weight, it includes the following raw material component：
30-80 parts of calcium carbonate, 5-10 parts of aluminium oxide, 10-20 parts of sodium oxide molybdena, 5-15 parts of calcium oxide, 5-10 parts of magnesia, oxygen
5-15 parts of copper of change, 5-10 parts of zirconium oxide, 5-10 parts of titanium oxide, 10-20 parts of nickel oxide, 10-30 parts of carborundum, 10-20 parts of silica flour,
0-40 parts of silica 1,5-10 parts of boron oxide, 5-20 parts of gadolinium oxide, 5-10 parts of potassium titanate crystal whisker, 20-40 parts of polyethylene glycol, has
10-30 parts of machine silicon coupling compound, 5-10 parts of epoxy resin, 40-90 parts of water.
In above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, conventional organosilicon coupling compound
To use, it is preferred that the organosilicon coupling compound includes KH-570 and/or KBE-903.
In above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, aluminium oxide, sodium oxide molybdena, calcium oxide, oxidation
Magnesium, cupric oxide, zirconium oxide and titanium oxide can play the role of increasing the mobility of cement；Nickel oxide, carborundum, silica flour can rise
To the effect of increase cement fusing point；Silica and boron oxide are as connectivity compound, it is possible to increase the caking property of cement；Oxygen
The toughness of cement can be improved by changing gadolinium.
The present invention also provides the preparation method of above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, it includes
Following steps：
Solid matter in raw material components is uniformly mixed, the liquid substance in raw material components is then added, is uniformly mixed
Obtain semiconductor crystal stove insulating layer reparation high temperature resistant cement.
The present invention protrusion effect be：
The present invention semiconductor crystal stove insulating layer reparation high temperature resistant cement, can more than 1000 DEG C of high temperature resistant, the limit
In the case of more than 3000 DEG C, reach and external high-temperature cement same effect；With strong cohesive property, high temperature resistant and corrosion resistant spy
Property, repaired suitable for semiconductor crystal high-temperature growth furnace, and the method for preparing this high-temperature cement is easy to operate, and cost is low
It is honest and clean, it is environmentally protective.
Embodiment
The technical solution in the present invention is clearly and completely described below in conjunction with specific embodiment, it is clear that retouched
The embodiment stated is only part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, originally
Field those of ordinary skill all other embodiments obtained without making creative work, belong to the present invention
The scope of protection.
Embodiment 1
The present embodiment provides a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, in parts by weight, it includes
The following raw material component：
30 parts of calcium carbonate, 5 parts of aluminium oxide, 10 parts of sodium oxide molybdena, 5 parts of calcium oxide, 5 parts of magnesia, 5 parts of cupric oxide, zirconium oxide 5
Part, 5 parts of titanium oxide, 10 parts of nickel oxide, 10 parts of carborundum, 10 parts of silica flour, 0 part of silica 1,5 parts of boron oxide, 5 parts of gadolinium oxide,
5 parts of potassium titanate crystal whisker, 20 parts of polyethylene glycol, 10 parts of organosilicon coupling compound (KH-570), 5 parts of epoxy resin, 40 parts of water.
The present embodiment also provides the preparation method of above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, it is wrapped
Include following steps：
After solid matter in raw material components is weighed, it is uniformly mixed, then weighs, adds liquid in raw material components
Body material, continues to stir, is uniformly mixed, that is, obtains semiconductor crystal stove insulating layer reparation high temperature resistant cement.
Obtained semiconductor crystal stove insulating layer reparation is measured with high temperature resistant cement, the results show utensil has strong viscous
Knot property, corrosion resistance and heat-resisting quantity, high temperature resistant reach 2000 DEG C, and at this temperature, cement adhesion strength is maintained at
Initial strength 32.7MPa, still reaches 30.1MPa after a week, does not occur significantly degrading.
Embodiment 2
The present embodiment provides a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, in parts by weight, it includes
The following raw material component：
80 parts of calcium carbonate, 10 parts of aluminium oxide, 20 parts of sodium oxide molybdena, 15 parts of calcium oxide, 10 parts of magnesia, 15 parts of cupric oxide, oxygen
Change 10 parts of zirconium, 10 parts of titanium oxide, 20 parts of nickel oxide, 30 parts of carborundum, 20 parts of silica flour, 40 parts of silica, 10 parts of boron oxide, oxygen
Change 20 parts of gadolinium, 10 parts of potassium titanate crystal whisker, 40 parts of polyethylene glycol, 30 parts of organosilicon coupling compound (KBE-903), epoxy resin 10
Part, 90 parts of water.
The present embodiment also provides the preparation method of above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, it is wrapped
Include following steps：
After solid matter in raw material components is weighed, it is uniformly mixed, then weighs, adds liquid in raw material components
Body material, continues to stir, is uniformly mixed, that is, obtains semiconductor crystal stove insulating layer reparation high temperature resistant cement.
Obtained semiconductor crystal stove insulating layer reparation is measured with high temperature resistant cement, the results show utensil has strong viscous
Knot property, corrosion resistance and heat-resisting quantity, high temperature resistant reach 2700 DEG C, and at this temperature, cement adhesion strength is maintained at
Initial strength 33.5MPa, still reaches 29.1MPa after a week, does not occur significantly degrading.
Embodiment 3
The present embodiment provides a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, in parts by weight, it includes
The following raw material component：
50 parts of calcium carbonate, 7 parts of aluminium oxide, 16 parts of sodium oxide molybdena, 12 parts of calcium oxide, 8 parts of magnesia, 10 parts of cupric oxide, oxidation
9 parts of zirconium, 8 parts of titanium oxide, 17 parts of nickel oxide, 23 parts of carborundum, 14 parts of silica flour, 33 parts of silica, 6 parts of boron oxide, gadolinium oxide
11 parts, 8 parts of potassium titanate crystal whisker, 28 parts of polyethylene glycol, organosilicon coupling compound (mixing of KH-570 and KBE-903 equal proportions) 28
Part, 6 parts of epoxy resin, 85 parts of water.
The present embodiment also provides the preparation method of above-mentioned semiconductor crystal stove insulating layer reparation high temperature resistant cement, it is wrapped
Include following steps：
After solid matter in raw material components is weighed, it is uniformly mixed, then weighs, adds liquid in raw material components
Body material, continues to stir, is uniformly mixed, that is, obtains semiconductor crystal stove insulating layer reparation high temperature resistant cement.
Obtained semiconductor crystal stove insulating layer reparation is measured with high temperature resistant cement, the results show utensil has strong viscous
Knot property, corrosion resistance and heat-resisting quantity, high temperature resistant reach 3300 DEG C, and at this temperature, cement adhesion strength is maintained at
Initial strength 34.7MPa, still reaches 25.6MPa after a week, does not occur degrading and drops.
It can be seen that the semiconductor crystal stove insulating layer reparation high temperature resistant cement of the embodiment of the present invention, being capable of 1000 DEG C of high temperature resistant
More than, more than 3000 DEG C under limiting case, reach and external high-temperature cement same effect or exceed；With strong cohesive property, resistance to height
Warm and corrosion resistant characteristic, is repaired suitable for semiconductor crystal high-temperature growth furnace, and the method for preparing this high-temperature cement
It is easy to operate, it is of low cost, it is environmentally protective.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (3)
1. a kind of semiconductor crystal stove insulating layer reparation high temperature resistant cement, in parts by weight, it includes the following raw material component：
30-80 parts of calcium carbonate, 5-10 parts of aluminium oxide, 10-20 parts of sodium oxide molybdena, 5-15 parts of calcium oxide, 5-10 parts of magnesia, cupric oxide
5-15 parts, 5-10 parts of zirconium oxide, 5-10 parts of titanium oxide, 10-20 parts of nickel oxide, 10-30 parts of carborundum, 10-20 parts of silica flour, dioxy
10-40 parts of SiClx, 5-10 parts of boron oxide, 5-20 parts of gadolinium oxide, 5-10 parts of potassium titanate crystal whisker, 20-40 parts of polyethylene glycol, organosilicon
10-30 parts of coupling compound, 5-10 parts of epoxy resin, 40-90 parts of water.
2. semiconductor crystal stove insulating layer reparation high temperature resistant cement according to claim 1, it is characterised in that：It is described to have
Machine silicon coupling compound includes KH-570 and/or KBE-903.
3. the preparation method of the semiconductor crystal stove insulating layer reparation high temperature resistant cement described in claim 1 or 2, it is included such as
Lower step：
Solid matter in raw material components is uniformly mixed, the liquid substance in raw material components is then added, is uniformly mixed to obtain the final product
To semiconductor crystal stove insulating layer reparation high temperature resistant cement.
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