CN107959094A - The improved wave filter of structure - Google Patents
The improved wave filter of structure Download PDFInfo
- Publication number
- CN107959094A CN107959094A CN201610900785.7A CN201610900785A CN107959094A CN 107959094 A CN107959094 A CN 107959094A CN 201610900785 A CN201610900785 A CN 201610900785A CN 107959094 A CN107959094 A CN 107959094A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- resonance
- wave filter
- open surface
- resonance holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention discloses a kind of improved wave filter of structure, including:One matrix, multiple resonance metal layer, a ground metal layer, a metal pattern layer, an input electrode and an output electrodes.The matrix has multiple resonance holes, and the plurality of resonance holes one end is located at the open surface of matrix, and the other end is located on short-circuit face.The plurality of resonance metal layer is arranged in the plurality of resonance holes.The ground metal layer is arranged on short-circuit face, top surface, bottom surface and the two side faces of matrix, is electrically connected to form short-circuit end with the plurality of resonance metal layer;The input electrode and the output electrode are arranged on matrix bottom surface or open surface and are not electrically connected with ground metal layer.The wave filter that intercouples is formed between the improved wave filter of structure provided by the invention, the wherein metal pattern layer and the plurality of resonance metal layer and the ground metal layer, reaches required use frequency range to adjust the length of the resonance metal layer and the metal pattern layer.
Description
Technical field
The present invention is on a kind of wave filter, espespecially a kind of improved filter of structure with the surface mount for changing frequency response
Ripple device.
Background technology
It is known that the wave filter of surface mount be widely used in wave collecting device (LNB), satellite navigation system (GPS) and
In WIFI systems.And wave filter is used on this wireless communication system, being will be folded in wireless communication system received signal
The noise filtering of band, with the quality for ensuring the transmission of communication system signal and receiving.
Current used wave filter has a carrier, the plurality of thereon with multiple resonance holes through the carrier
One end of resonance holes is located on open surface, and the other end is on the short circuit face, in the short-circuit face of the carrier, top surface, bottom surface and two
Covered with outer conducting layer to form the ground connection of the wave filter on side.Inner conducting layer is coated with the plurality of resonance holes to be formed altogether
Shake device, is electrically connected to form short-circuit end with the plurality of inner conducting layer and the outer conducting layer, and positioned at the resonance holes shape of the open surface
Into open end.Being made in the bottom surface has an input weld pad and an output weld pad, input weldering electricity and the output weld pad outer to be led with this
Formed with a gap between electric layer, when wave filter is welded on circuit board, the input weld pad and output weld pad offer signal are defeated
Enter and export, and the outer conducting layer of bottom surface is connected together with the circuit board ground.
Criticized on the above-mentioned wave filter surface being previously mentioned the design covered can because being used on different communication systems and
It is different, and if the pattern on wave filter surface will also influence the characteristic of wave filter when designing incorrect.
The content of the invention
Therefore, it is a primary object of the present invention to provide a kind of structure improved wave filter, the spy for improving filter construction
Property, therefore metal pattern layer is arranged on the open surface by the present invention, to increase filter construction entirety coupled capacitor, to reach
The use frequency range needed, while also offer has low insertion loss (insertion loss) and sideband rejection (out-band
The effect such as rejection).
Another object of the present invention is to provide a kind of structure improved wave filter, single resonance holes are by two kinds on wave filter
Hole composition of different shapes, can reduce the size of wave filter, to increase the Q values of filter construction, and can suppress false letter
Number response (spurious response).
It is still another object of the present invention to provide a kind of improved wave filter of structure, single resonance holes are by two kinds on wave filter
Different hole shapes composition, and the depth of two kinds of hole shapes does not wait deep, can tune up the efficiency of filter construction, and improvement wave filter knot
The frequency response of structure.
In order to achieve the above object, the present invention provides a kind of improved wave filter of structure, including:
One matrix, thereon with an open surface, a short-circuit face, a top surface, a bottom surface and two side faces, has multiple common on the matrix
Shake hole, and the plurality of resonance holes run through the matrix, and one end of the plurality of resonance holes is located on the open surface, and the other end is located at the short circuit
On face;
Multiple resonance metal layers, in the plurality of resonance holes;
One ground metal layer, on the short circuit face, the top surface, the bottom surface and the two side faces;Wherein, on the short circuit face
Ground metal layer is electrically connected to form short-circuit end with the plurality of resonance metal layer in the plurality of resonance holes, the resonance metal layer position
Open end is formed on open surface;The ground metal layer is arranged on the bottom surface and is in E shapes, and two of the ground metal layer in the E shapes
With two exposed naked dummy sections of the matrix are made, which extends on the open surface for side;
One metal pattern layer, is electrically connected on the open surface, and with the ground metal layer;
One input electrode, in one of them naked dummy section of the two naked dummy section;
One output electrode, in another naked dummy section of the two naked dummy section;
Wherein, formed between the metal pattern layer and the plurality of resonance metal layer and between the ground metal layer with phase mutual coupling
The filter construction of conjunction, can be reached required by length and the metal pattern layer for adjusting the resonance metal layer and used frequently
Section.
Wherein, which is made of a plurality of line, which includes one first sideline, one second sideline, one
First straight line, a second straight line and one the 3rd straight line, first sideline are arranged on the junction of the open surface and the top surface, two side
Face and the junction of open surface, and the junction of open surface and bottom surface, and be electrically connected with the grounding metal plane, second side
Line is arranged on the junction of the open surface and the bottom surface and is electrically connected with the ground metal layer.
Wherein, which is arranged in one of them naked dummy section of the two naked dummy section, and the other end extends
On the open surface, and it is adjacent to one of resonance holes of the plurality of resonance holes.
Wherein, which is arranged in another naked dummy section of the two naked dummy section, and the other end extends this
On the naked dummy section of open surface, and it is adjacent to one of resonance holes of the plurality of resonance holes.
Wherein, which is made of multiple rectangular blocks and a straightway, and the plurality of rectangular block is respectively arranged on this and opens
Put around the plurality of resonance holes on face, and be electrically connected with the plurality of resonance metal layer in the plurality of resonance holes, and should
Multiple rectangular blocks are to each other respectively formed with a gap;The straightway is arranged on the side of the plurality of rectangular block.
Wherein, one end of the input electrode and the output electrode is respectively arranged on the two naked dummy section of the bottom surface of the matrix
On, the other end of the input electrode and the output electrode extends on the open surface and L-shaped, and the input electrode and should
The other end of output electrode is adjacent with the opposite side of first rectangular block and the 4th rectangular block and formed with a gap.
Wherein, the plurality of resonance holes include multiple circular holes and multiple elliptical apertures with different-diameter.
Wherein, the plurality of resonance metal layer is arranged on the inner wall of the plurality of elliptical aperture and the plurality of circular hole.
Wherein, the plurality of resonance holes have round-meshed elliptical aperture to be internal.
Wherein, the depth of the elliptical aperture is less than the depth of the circular hole.
Wherein, which is in a shape of falling E, and the ground metal layer for being somebody's turn to do the shape of falling E is enclosed arranged on the plurality of resonance holes side
And it is electrically connected with the ground metal layer of the top surface and two side faces;Wherein, the ground metal layer of the shape of falling E, which has, is located on diameter
A ring part on minimum elliptical aperture, and the ring part and the ground metal layer of the bottom surface are electrically connected.
The present invention also provides a kind of improved wave filter of structure, including:
One matrix, thereon with an open surface, a short-circuit face, a top surface, a bottom surface and two side faces, have on the matrix it is more each and every one
Resonance holes, the plurality of resonance holes run through the matrix, and one end of the plurality of resonance holes is located on the open surface, and it is short that the other end is located at this
On road surface;
Multiple resonance metal layers, in the plurality of resonance holes;
One ground metal layer, on the short circuit face, the top surface, the bottom surface and the two side faces;Wherein, on the short circuit face
Ground metal layer is electrically connected to form short-circuit end with the plurality of resonance metal layer in the plurality of resonance holes, the resonance metal layer position
In on open surface and forming open end;Arranged on the bottom surface and it is in E shapes in the ground metal layer, and in the ground metal layer of the E shapes
Both sides have make two exposed naked dummy sections of the matrix, which extends on the open surface;
One metal pattern layer, on the open surface;
One input electrode, in one of them naked dummy section of the two naked dummy section;
One output electrode, in another naked dummy section of the two naked dummy section;
Wherein, formed between the metal pattern layer and the plurality of resonance metal layer and between the ground metal layer with phase mutual coupling
The filter construction of conjunction, can reach required use by length and the metal pattern layer for adjusting the plurality of resonance metal layer
Frequency range.
Wherein, the plurality of resonance holes include multiple circular holes and multiple elliptical apertures with different-diameter.
Wherein, the plurality of resonance metal layer is arranged on the inner wall of the plurality of elliptical aperture and the plurality of circular hole.
Wherein, the plurality of resonance holes have round-meshed elliptical aperture to be internal.
Wherein, the depth of the elliptical aperture is less than the depth of the circular hole.
The present invention provides a kind of improved wave filter of structure, with the metal pattern layer with it is the plurality of resonate metal layer and this connect
Composition is with the filter construction that intercouples between ground metal layer, can be by adjusting the length and the metal figure of the resonance metal layer
Pattern layer is to reach required use frequency range.
Brief description of the drawings
Fig. 1 is the filter construction appearance diagram of the first embodiment of invention;
The elevational schematic view that Fig. 2 is Fig. 1;
The schematic rear view that Fig. 3 is Fig. 1;
Fig. 4 is the filter construction appearance diagram of the second embodiment of the present invention;
Fig. 5 a are the input reflection coefficient (S11) and forward transmission coefficient of the filter construction of the first embodiment of the present invention
(S21) measurement curve synoptic diagram;
Fig. 5 b are the input reflection coefficient (S11) and forward transmission coefficient of the filter construction of the second embodiment of the present invention
(S21) measurement curve synoptic diagram;
Fig. 6 is the filter construction appearance diagram of the third embodiment of the present invention;
Fig. 7 is side schematic cross-sectional views of the Fig. 6 in 7-7 positions;
Fig. 8 is the filter construction appearance diagram of the fourth embodiment of the present invention.
In figure:
Filter construction 10;
Matrix 1;
Open surface 11;
Naked dummy section 111,112,113,114;
Short-circuit face 12;
Top surface 13;
Bottom surface 14;
Naked dummy section 141;
Side 15,16;
Resonance holes 17;
Elliptical aperture 171a, 172a, 173a;
Circular hole 171b, 172b, 173b;
Resonate metal layer 2;
Ground metal layer 3;
E shapes pattern 31;
Metal pattern layer 4,4a, 4b;
Rectangular block 41a, 42a, 43a, 44a;
Ring part 41b;
Straightway 45a;
First sideline 41;
Second sideline 42;
First straight line 43;
Second straight line 44;
Inter is every 441;
3rd straight line 45;
Inter is every 451
Gap 46a, 47a;
Input electrode 5,5a;
Output electrode 6,6a;
Curve 20,20a, 30,30a;
Rejection zone transmission zero 201,201a.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art can be with
It is better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
- Fig. 3 is please referred to Fig.1, filter construction appearance for the first embodiment of the present invention, look up and schematic rear view.
As shown in the figure:The improved wave filter of structure of the present invention, the filter construction 10 include:One matrix 1, it is multiple resonance metal layer 2,
One ground metal layer 3, a metal pattern layer 4, an input electrode 5 and an output electrode 6.Wherein, with the inner metal layer 2, this connects
Ground metal layer 3, the input electrode 5 and the output electrode 6 are coated on the matrix 1 and form a dielectric filter structure.Wherein, the base
Square body is made with the ceramic material of high-k in body 1, thereon with the short-circuit face 12 of an open surface 11, one, a top surface 13, one
Bottom surface 14 and two side faces 15,16.Multiple resonance holes 17 are equipped with the matrix 1, which runs through the matrix 1, the resonance
17 one end open of hole is located on the open surface 11, and one end open is located on the short circuit face 12.In this schema, which is
Round hole.
The plurality of resonance metal layer 2, on the inner wall of the plurality of resonance holes 17, makes the plurality of resonance holes 17 form filtering
The resonator of device structure 10.
The ground metal layer 3, on the short circuit face 12, the top surface 13, the bottom surface 14 and the two side faces 15,16.Wherein,
The short circuit face 12, which is arranged on, in the ground metal layer 3 is electrically connected shape with the plurality of resonance metal layer 2 in the plurality of resonance holes 17
Into short-circuit end, formation open end of the plurality of resonance metal layer 2 on open surface 11.In the ground metal layer 3 arranged on this
Bottom surface 14 is in E shapes pattern 31, and in the both sides of the E shapes pattern 31 formed with two exposed naked dummy sections 141 of the matrix 1 are made, should
Two naked dummy sections 141 are extended on the open surface 11.
The metal pattern layer 4, is made of, which includes one first sideline 41, one second sideline several more lines
42nd, a first straight line 43, a second straight line 44 and one the 3rd straight line 45.First sideline 41 is arranged on the open surface 11 and the top surface
13 junction, and the junction of open surface 11 and the two side faces 15,16, and open surface 11 and the junction of bottom surface 14, and
It is electrically connected with the grounding metal plane 3.Second sideline 42 is arranged on the junction of the open surface 11 and the bottom surface 14 and is connect with this
Ground metal layer 3 is electrically connected.The first straight line 43 be arranged on the two adjacent resonance holes 17 between and with first sideline 41 and
Second sideline 42 is electrically connected.The second straight line 44 be arranged on the two adjacent resonance holes 17 between and with first sideline 41
And second sideline 42 is electrically connected, wherein, which is dotted line, thereon with an interval 441.In the 3rd straight line
45 are arranged between the two adjacent resonance holes 17 and are electrically connected with first sideline 41 and second sideline 42, wherein, should
3rd straight line 45 is dotted line, and thereon with an interval 451, which is located adjacent to first sideline 41.With the metal
The first sideline 41, one second sideline 42, a first straight line 43, a second straight line 44 and one the 3rd straight line 45 of patterned layer 4 should
Enclose and be set as outside multiple naked dummy sections 111,112,113,114 on open surface 11, and with the resonance metal layer 2 of the resonance holes 17 and
Composition, can be by adjusting the resonance metal layer 2 with 10 electrical characteristic of filter construction to intercouple between the ground metal layer 3
Length and the metal pattern layer 4 to reach required bandwidth, and provide low insertion loss (insertion loss) and
Sideband rejection (out-band rejection) etc. acts on.
The input electrode 5, thereon one end be arranged on the naked dummy section 141, the other end extends the naked dead zone of the open surface 11
On domain 111, and it is adjacent to one of the plurality of resonance holes 17.Signal, which is provided, with the input electrode 5 is input into the wave filter
Processing is filtered in structure 10.
The output electrode 6, thereon one end be arranged on the naked dummy section 141, the other end extends the naked dead zone of the open surface 11
On domain 114, and it is adjacent to one of the plurality of resonance holes 17.There is provided with the output electrode 6 and filtered through the filter construction 10
Signal output after ripple.
By, the input electrode 5, the output electrode 6 and the ground metal layer 3 of the bottom surface 14 of the filter construction 10,
Enable 10 surface mount of filter construction on circuit board (not shown).
Referring to Fig. 4, the filter construction appearance diagram for volume second embodiment of the present invention.As shown in the figure:This second
Filter construction 10 disclosed by embodiment is roughly the same with the filter construction 10 of first embodiment, institute's difference be in this
Metal pattern layer 4a, input electrode 5a and the output electrode 6a of two embodiments.Metal pattern layer 4a by multiple rectangular block 41a,
42a, 43a, 44a and straightway 45a compositions.The plurality of rectangular block 41a, 42a, 43a, 44a are respectively arranged on the plurality of resonance holes
It is electrically connected around 17 and with the plurality of resonance metal layer 2 in the plurality of resonance holes 17, and the plurality of rectangular block 41a,
42a, 43a, 44a are to each other respectively formed with a gap 46a.Straightway 45a is arranged on the plurality of rectangular block 41a, 42a, 43a, 44a
Side on.
One end of input electrode 5a and output electrode 6a are arranged on the naked dummy section 141 of the bottom surface 14 of the matrix 1, should
The other end of input electrode 5a and output electrode 6a extend L-shaped on the open surface 11 and first rectangular block 41a
And the opposite side of the 4th rectangular block 44a is adjacent and formed with a gap 47a.
Similarly, by the metal pattern layer 4a, input electrode 5a, output electrode 6a of filter construction 10 with being somebody's turn to do
Composition is with the electricity of filter construction 10 to intercouple between the resonance metal layer 2 of multiple resonance holes 17 and the ground metal layer 3
Gas characteristic, can reach required frequency range by length and the metal pattern layer 4 for adjusting the resonance metal layer 2, and provide
Low insertion loss (insertion loss) and sideband rejection (out-band rejection) etc. act on.
Fig. 5 a, Fig. 5 b are referred to, is that the input of the filter construction of the first embodiment of the present invention and second embodiment is anti-
Penetrate coefficient (S11) and forward the measurement curve synoptic diagram of transmission coefficient (S21).As shown in the figure:First due to the present invention implements
The metal pattern layer 4 of the filter construction 10 of example and second embodiment is different from the design of 4a, therefore has when measuring
The curve 20 of reflectance factor (S11), 20a and forward curve 30, the 30a of transmission coefficient (S21).Therefore first embodiment is being carried out
The forward transmission coefficient of filter construction measure on the curve 20 position of shown rejection zone transmission zero 201 on the right side
Side.And measure rejection zone transmission shown on the curve 20a of the forward transmission coefficient of the filter construction 10 of second embodiment
The position of zero point 201a is on the left side.
From above-mentioned measurement, the present invention is in first embodiment and the metal figure of the filter construction 10 of second embodiment
Pattern layer 4 is different from the design of 4a, except can design it is different make frequency range in addition to, the rejection zone transmission of the filter construction 10
Dead-center position is also different.
Refer to Fig. 6, Fig. 7, be the third embodiment of the present invention filter construction appearance and Fig. 6 in the side of 7-7 positions
Schematic cross-sectional view.As shown in the figure:The present embodiment is roughly the same with first embodiment, institute's difference be in the plurality of resonance holes 17 by
It is the plurality of difference caliber size elliptical aperture 171a, 172a, 173a, in the present embodiment the small elliptical aperture 173a of the bore be located at
Between two bigbore elliptical aperture 171a, 172a.And in respectively having a circular hole in the plurality of elliptical aperture 171a, 172a, 173a
171b, 172b, 173b, the plurality of circular hole 171b, 172b, 173b are adjacent on the plurality of elliptical aperture 171a, 172a, 173a internal diameter
At edge.Secondly, by the resonance metal layer 2 be arranged on the plurality of elliptical aperture 171a, 172a, 173a and the plurality of circular hole 171b, 172b,
On the inner wall of 173b.The plurality of resonance holes 17 connect circular hole 171b (172b, 173b) with elliptical aperture 171a (172a, 173a)
Design, mainly to reduce the size of filter construction 10, to increase the Q values of filter construction, and false letter can be suppressed
Number response (spurious response).In this schema, the length of elliptical aperture 171a (172a, 173a) is less than the circular hole
The length of 171b (172b, 173b), filter construction 10 can be tuned up with the length of the plurality of elliptical aperture 171a (172a, 173a)
Efficiency, and improve filter construction 10 frequency response.
Secondly, the input electrode 5 and the output electrode 6 are only in the naked dummy section 141 of the bottom surface 14, the input electrode
5 and the other end of the output electrode 6 do not extend on the open surface 11.
It is noted that the straightway 45a of the metal pattern layer 4a of the second embodiment can be arranged on the plurality of resonance
The side in hole 17, coupled capacitor, electricity are produced with the plurality of resonance metal layer 2 in straightway 45a and the plurality of resonance holes 17
Sense, allows the filter construction 10 to improve reflectance factor (S11) matching and sideband rejection (out-band rejection) journey
Degree, and reach required use frequency range.
Referring to Fig. 8, the filter construction appearance diagram for the fourth embodiment of the present invention.As shown in the figure:This implementation
Example is roughly the same with 3rd embodiment, and it is a shape of falling E that institute's difference, which is in metal pattern layer 4b, which encloses more arranged on this
A 17 side of resonance holes and the ground metal layer 3 of the top surface 13 and two side faces 15,16 are electrically connected.Wherein, it is somebody's turn to do the ground connection for the shape of falling E
Metal layer 3 has a ring part 41b and is located on the small elliptical aperture 173b of the bore, and with the ground metal layer 3 of the bottom surface 14
It is electrically connected.
By the shape of the falling E design of metal pattern layer 4b, with the plurality of resonance metal layer 2 in the plurality of resonance holes 17
Composition, can be by adjusting the length and the metal figure of the resonance metal layer 2 with 10 electrical characteristic of filter construction that intercouples
Pattern layer 4b is to reach required use frequency range.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
Enclose not limited to this.The equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in the present invention
Protection domain within.Protection scope of the present invention is subject to claims.
Claims (16)
- A kind of 1. improved wave filter of structure, it is characterised in that including:One matrix, thereon with an open surface, a short-circuit face, a top surface, a bottom surface and two side faces, has multiple common on the matrix Shake hole, and the plurality of resonance holes run through the matrix, and one end of the plurality of resonance holes is located on the open surface, and the other end is located at the short circuit On face;Multiple resonance metal layers, in the plurality of resonance holes;One ground metal layer, on the short circuit face, the top surface, the bottom surface and the two side faces;Wherein, on the short circuit face Ground metal layer is electrically connected to form short-circuit end with the plurality of resonance metal layer in the plurality of resonance holes, the resonance metal layer position Open end is formed on open surface;The ground metal layer is arranged on the bottom surface and is in E shapes, and two of the ground metal layer in the E shapes With two exposed naked dummy sections of the matrix are made, which extends on the open surface for side;One metal pattern layer, is electrically connected on the open surface, and with the ground metal layer;One input electrode, in one of them naked dummy section of the two naked dummy section;One output electrode, in another naked dummy section of the two naked dummy section;Wherein, formed between the metal pattern layer and the plurality of resonance metal layer and between the ground metal layer with phase mutual coupling The filter construction of conjunction, can be reached required by length and the metal pattern layer for adjusting the resonance metal layer and used frequently Section.
- 2. the improved wave filter of structure according to claim 1, it is characterised in that wherein, the metal pattern layer is by a plurality of Line forms, which includes one first sideline, one second sideline, a first straight line, a second straight line and one the 3rd straight line, First sideline is arranged on the junction of the junction of the open surface and the top surface, the two side faces and open surface, and open surface with The junction of bottom surface, and be electrically connected with the grounding metal plane, which is arranged on the open surface and the junction of the bottom surface And it is electrically connected with the ground metal layer.
- 3. the improved wave filter of structure according to claim 2, it is characterised in that wherein, which is arranged on In one of them naked dummy section of the two naked dummy section, the other end is extended on the open surface, and is adjacent to the plurality of resonance holes One of resonance holes.
- 4. the improved wave filter of structure according to claim 3, it is characterised in that wherein, which is arranged on In another naked dummy section of the two naked dummy section, the other end is extended on the naked dummy section of the open surface, and it is more to be adjacent to this One of resonance holes of a resonance holes.
- 5. the improved wave filter of structure according to claim 1, it is characterised in that wherein, the metal pattern layer is by multiple Rectangular block and straightway composition, the plurality of rectangular block are respectively arranged on around the plurality of resonance holes on the open surface, and with The plurality of resonance metal layer in the plurality of resonance holes is electrically connected, and the plurality of rectangular block is to each other respectively formed with a gap; The straightway is arranged on the side of the plurality of rectangular block.
- 6. the improved wave filter of structure according to claim 5, it is characterised in that wherein, the input electrode and the output One end of electrode is respectively arranged on the two naked dummy section of the bottom surface of the matrix, the other end of the input electrode and the output electrode Extend it is on the open surface and L-shaped, and the other end of the input electrode and the output electrode with first rectangle The opposite side of block and the 4th rectangular block is adjacent and formed with a gap.
- 7. the improved wave filter of structure according to claim 1, it is characterised in that wherein, the plurality of resonance holes include more A circular hole and multiple elliptical apertures with different-diameter.
- 8. the improved wave filter of structure according to claim 7, it is characterised in that wherein, the plurality of resonance metal layer is set On the inner wall of the plurality of elliptical aperture and the plurality of circular hole.
- 9. the improved wave filter of structure according to claim 1, it is characterised in that wherein, the plurality of resonance holes are inside Has round-meshed elliptical aperture.
- 10. the improved wave filter of structure according to claim 9, it is characterised in that wherein, the depth of the elliptical aperture is less than The depth of the circular hole.
- 11. the improved wave filter of structure according to claim 10, it is characterised in that wherein, which is in one The shape of falling E, should the shape of falling E ground metal layer enclose arranged on the plurality of resonance holes side and with the ground metal layer of the top surface and two side faces It is electrically connected;Wherein, being somebody's turn to do the ground metal layer for the shape of falling E has the ring part being located on the elliptical aperture of diameter minimum, and should Ring part and the ground metal layer of the bottom surface are electrically connected.
- A kind of 12. improved wave filter of structure, it is characterised in that including:One matrix, thereon with an open surface, a short-circuit face, a top surface, a bottom surface and two side faces, have on the matrix it is more each and every one Resonance holes, the plurality of resonance holes run through the matrix, and one end of the plurality of resonance holes is located on the open surface, and it is short that the other end is located at this On road surface;Multiple resonance metal layers, in the plurality of resonance holes;One ground metal layer, on the short circuit face, the top surface, the bottom surface and the two side faces;Wherein, on the short circuit face Ground metal layer is electrically connected to form short-circuit end with the plurality of resonance metal layer in the plurality of resonance holes, the resonance metal layer position In on open surface and forming open end;Arranged on the bottom surface and it is in E shapes in the ground metal layer, and in the ground metal layer of the E shapes Both sides have make two exposed naked dummy sections of the matrix, which extends on the open surface;One metal pattern layer, on the open surface;One input electrode, in one of them naked dummy section of the two naked dummy section;One output electrode, in another naked dummy section of the two naked dummy section;Wherein, formed between the metal pattern layer and the plurality of resonance metal layer and between the ground metal layer with phase mutual coupling The filter construction of conjunction, can reach required use by length and the metal pattern layer for adjusting the plurality of resonance metal layer Frequency range.
- 13. the improved wave filter of structure according to claim 12, it is characterised in that wherein, the plurality of resonance holes include Multiple circular holes and multiple elliptical apertures with different-diameter.
- 14. the improved wave filter of structure according to claim 13, it is characterised in that wherein, the plurality of resonance metal layer On the inner wall of the plurality of elliptical aperture and the plurality of circular hole.
- 15. the improved wave filter of structure according to claim 12, it is characterised in that wherein, the plurality of resonance holes are interior Portion has round-meshed elliptical aperture.
- 16. the improved wave filter of structure according to claim 15, it is characterised in that wherein, the depth of the elliptical aperture is small In the depth of the circular hole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610900785.7A CN107959094B (en) | 2016-10-17 | 2016-10-17 | Filter with improved structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610900785.7A CN107959094B (en) | 2016-10-17 | 2016-10-17 | Filter with improved structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107959094A true CN107959094A (en) | 2018-04-24 |
CN107959094B CN107959094B (en) | 2020-10-30 |
Family
ID=61954399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610900785.7A Active CN107959094B (en) | 2016-10-17 | 2016-10-17 | Filter with improved structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107959094B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110071350A (en) * | 2019-05-23 | 2019-07-30 | 嘉兴佳利电子有限公司 | Dielectric filter |
CN113036325A (en) * | 2021-01-26 | 2021-06-25 | 嘉兴佳利电子有限公司 | Novel dielectric filter |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010008388A1 (en) * | 2000-01-19 | 2001-07-19 | Dong-Suk Jun | Dielectric filter having notch pattern |
CN1351770A (en) * | 2000-03-17 | 2002-05-29 | 宇部电子有限公司 | Dielectric ceramic filter with improved electrical characteristics in high side of filter passband |
CN2867619Y (en) * | 2005-08-15 | 2007-02-07 | 浙江正原电气股份有限公司 | Ceramic dielectric filter |
CN101908666A (en) * | 2010-07-27 | 2010-12-08 | 苏州艾福电子通讯有限公司 | Dielectric filter for improving secondary harmonic waves |
CN204927460U (en) * | 2015-07-16 | 2015-12-30 | 深圳乾瀚科技有限公司 | Improve out of band rejection's broad band filter |
-
2016
- 2016-10-17 CN CN201610900785.7A patent/CN107959094B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010008388A1 (en) * | 2000-01-19 | 2001-07-19 | Dong-Suk Jun | Dielectric filter having notch pattern |
CN1351770A (en) * | 2000-03-17 | 2002-05-29 | 宇部电子有限公司 | Dielectric ceramic filter with improved electrical characteristics in high side of filter passband |
CN2867619Y (en) * | 2005-08-15 | 2007-02-07 | 浙江正原电气股份有限公司 | Ceramic dielectric filter |
CN101908666A (en) * | 2010-07-27 | 2010-12-08 | 苏州艾福电子通讯有限公司 | Dielectric filter for improving secondary harmonic waves |
CN204927460U (en) * | 2015-07-16 | 2015-12-30 | 深圳乾瀚科技有限公司 | Improve out of band rejection's broad band filter |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110071350A (en) * | 2019-05-23 | 2019-07-30 | 嘉兴佳利电子有限公司 | Dielectric filter |
CN113036325A (en) * | 2021-01-26 | 2021-06-25 | 嘉兴佳利电子有限公司 | Novel dielectric filter |
CN113036325B (en) * | 2021-01-26 | 2022-08-12 | 嘉兴佳利电子有限公司 | Dielectric filter |
Also Published As
Publication number | Publication date |
---|---|
CN107959094B (en) | 2020-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5905420A (en) | Dielectric filter | |
CN102035491B (en) | Multilayer bandpass filter | |
KR100972760B1 (en) | Bandpass filter and high frequency module using the same and radio communication device using them | |
JPS6342501A (en) | Microwave band-pass filter | |
EP2495804B1 (en) | Coaxial resonator, and dielectric filter, wireless communication module, and wireless communication device using the same | |
CN107959094A (en) | The improved wave filter of structure | |
CN206301920U (en) | The improved wave filter of structure | |
EP0863566B1 (en) | Dielectric filter, dielectric duplexer and method of manufacturing the same | |
US10153532B2 (en) | Filter structure improvement | |
US7782157B2 (en) | Resonant circuit, filter circuit, and multilayered substrate | |
US6087909A (en) | Dielectric filter having at least one stepped resonator hole with an elongated cross-section | |
TWM539186U (en) | Improved filter structure | |
US8400236B2 (en) | Electronic component | |
CN101853975A (en) | Low-loss band-pass filter based on defected ground structure | |
JP3574893B2 (en) | Dielectric filter, dielectric duplexer and communication device | |
KR100369211B1 (en) | Monoblock dielectric duplexer | |
US9007147B2 (en) | Branching filter, and wireless communication module and wireless communication device using same | |
US20020196106A1 (en) | Dielectric filter, dielectric duplexer, and communication apparatus | |
TWI635650B (en) | Filter structure | |
KR101681899B1 (en) | Dielectric filter | |
JP2000244206A (en) | Dielectric filter, dielectric duplexer and communication apparatus | |
CN107017461B (en) | Bandpass metamaterial structure and radome | |
CN214411478U (en) | Dielectric filter | |
KR101670893B1 (en) | Dielectric filter | |
CN221150268U (en) | High-rejection band-pass filter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |