CN107958957A - A kind of preparation method of no slicker solder perovskite thin film - Google Patents
A kind of preparation method of no slicker solder perovskite thin film Download PDFInfo
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- CN107958957A CN107958957A CN201711126086.2A CN201711126086A CN107958957A CN 107958957 A CN107958957 A CN 107958957A CN 201711126086 A CN201711126086 A CN 201711126086A CN 107958957 A CN107958957 A CN 107958957A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Nitrogen Condensed Heterocyclic Rings (AREA)
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Abstract
The present invention relates to a kind of preparation method of no slicker solder perovskite thin film, it includes following preparation process by the HI solution that concentration is 57% and the methylamine solution that concentration is 40% according to volume ratio 1:After 2.4 mixing, being placed in magnetic agitation 2h under ice bath environment makes it fully react；The method of the invention prepare without slicker solder perovskite thin film, there is minimum energy gap, perovskite thin film of its crystal property better than other compositions.
Description
Technical field
The present invention relates to a kind of preparation method of no slicker solder perovskite thin film.
Background technology
Hybrid perovskite solar cell has the advantages that energy conversion efficiency is high low with processing cost, closely
Received significant attention over year, one of 2013 annual ten big sciences breakthroughs are classified as by Science magazines.The calcium of hybrid
Titanium ore material is there is excellent bipolarity carrier transport performance as the advantage of solar cell light absorption layer, and with
The replacement or introducing of element, its energy gap adjusts within the specific limits, and remains stable face-centred cubic structure at the same time.Mesh
The preparation method of preceding perovskite absorbed layer mainly has a step solwution method, successive sedimentation method, Gas Evaporation Method etc., wherein, a step is molten
Liquid method is simple for process, and application is quite varied.At this stage, due to the perovskite absorbed layer extinction coefficient of the Pb containing metal is higher,
Band gap width is suitable, it is studied it is the most deep, but since Pb is larger to environmental hazard, such as with harmless element substitution Pb, it will
To more environment-friendly.In recent years, the research for tin perovskite thin film being prepared using sn substitutions Pb is increased increasingly, this is right
Unleaded perovskite solar cell is prepared in exploration to have great importance.
The content of the invention
The present invention proposes a kind of preparation method of no slicker solder perovskite thin film.
A kind of preparation method of no slicker solder perovskite thin film of the present invention, including following preparation process：
（1）By the HI solution that concentration is 57% and the methylamine solution that concentration is 40% according to volume ratio 1:After 2.4 mixing, ice bath is placed in
Magnetic agitation 2h makes it fully react under environment；
（2）Then solution is placed in Rotary Evaporators, sets the temperature of rotary evaporation as 70 DEG C, until obtaining white crystal；
（3）White crystal is placed in the vacuum drying chamber that temperature is 100 DEG C again and keeps the temperature 24h, that is, obtains dry methylpyridinium iodide
Ammonium white crystal；
（4）FT0 electro-conductive glass is successively cleaned by ultrasonic 10min with distilled water, alcohol and acetone, then again on electro-conductive glass
Spin coating Ti02Porous support layer, rotating speed are 3500 rpms, and spin-coating time is 60 seconds；
（5）Then the sheet glass of the good shelf layer of spin coating is placed in heating plate, 30rain is kept at 500 DEG C, makes Ti02Crystallization；
（6）Weigh tin halides to be dissolved in DMF with methylpyridinium iodide ammonium, be hybridly prepared into certain density precursor solution, will prepare
Good precursor solution is placed in sonic oscillation instrument sonic oscillation 10min to promote the abundant dissolving and reaction of reactant；
（7）Precursor solution is spun on Ti02On porous support layer, rotating speed is 1000-3500 rpms, and spin-coating time is
The sheet glass of the good precursor solution of spin coating, is then placed in heating plate by 60-80S, is after 5-8min is kept at 100-150 DEG C
.
Preferably, the step（7）Rotating speed be 2800 rpms, spin-coating time 80S, then by the good forerunner of spin coating
The sheet glass of liquid solution is placed in heating plate, and 8min is kept at 120 DEG C.
The method of the invention prepare without slicker solder perovskite thin film, there is minimum energy gap, its knot
Brilliant performance is better than the perovskite thin film of other compositions.
Embodiment
Embodiment 1.
A kind of preparation method of no slicker solder perovskite thin film of the present invention, including following preparation process：
（1）By the HI solution that concentration is 57% and the methylamine solution that concentration is 40% according to volume ratio 1:After 2.4 mixing, ice bath is placed in
Magnetic agitation 2h makes it fully react under environment；
（2）Then solution is placed in Rotary Evaporators, sets the temperature of rotary evaporation as 70 DEG C, until obtaining white crystal；
（3）White crystal is placed in the vacuum drying chamber that temperature is 100 DEG C again and keeps the temperature 24h, that is, obtains dry methylpyridinium iodide
Ammonium white crystal；
（4）FT0 electro-conductive glass is successively cleaned by ultrasonic 10min with distilled water, alcohol and acetone, then again on electro-conductive glass
Spin coating Ti02Porous support layer, rotating speed are 3500 rpms, and spin-coating time is 60 seconds；
（5）Then the sheet glass of the good shelf layer of spin coating is placed in heating plate, 30rain is kept at 500 DEG C, makes Ti02Crystallization；
（6）Weigh tin halides to be dissolved in DMF with methylpyridinium iodide ammonium, be hybridly prepared into certain density precursor solution, will prepare
Good precursor solution is placed in sonic oscillation instrument sonic oscillation 10min to promote the abundant dissolving and reaction of reactant；
（7）Precursor solution is spun on Ti02On porous support layer, rotating speed is 1000-3500 rpms, and spin-coating time is
The sheet glass of the good precursor solution of spin coating, is then placed in heating plate by 60-80S, is after 5-8min is kept at 100-150 DEG C
.
Embodiment 2.
A kind of preparation method of no slicker solder perovskite thin film of the present invention, including following preparation process
（1）By the HI solution that concentration is 57% and the methylamine solution that concentration is 40% according to volume ratio 1:After 2.4 mixing, ice bath is placed in
Magnetic agitation 2h makes it fully react under environment；
（2）Then solution is placed in Rotary Evaporators, sets the temperature of rotary evaporation as 70 DEG C, until obtaining white crystal；
（3）White crystal is placed in the vacuum drying chamber that temperature is 100 DEG C again and keeps the temperature 24h, that is, obtains dry methylpyridinium iodide
Ammonium white crystal；
（4）FT0 electro-conductive glass is successively cleaned by ultrasonic 10min with distilled water, alcohol and acetone, then again on electro-conductive glass
Spin coating Ti02Porous support layer, rotating speed are 3500 rpms, and spin-coating time is 60 seconds；
（5）Then the sheet glass of the good shelf layer of spin coating is placed in heating plate, 30rain is kept at 500 DEG C, makes Ti02Crystallization；
（6）Weigh tin halides to be dissolved in DMF with methylpyridinium iodide ammonium, be hybridly prepared into certain density precursor solution, will prepare
Good precursor solution is placed in sonic oscillation instrument sonic oscillation 10min to promote the abundant dissolving and reaction of reactant；
（7）Precursor solution is spun on Ti02On porous support layer, rotating speed is 2800 rpms, spin-coating time 80S, so
The sheet glass of the good precursor solution of spin coating is placed in heating plate afterwards, at 120 DEG C after holding 8min to obtain the final product.
Claims (2)
1. a kind of preparation method of no slicker solder perovskite thin film, it is characterised in that including following preparation process：
（1）By the HI solution that concentration is 57% and the methylamine solution that concentration is 40% according to volume ratio 1:After 2.4 mixing, ice bath is placed in
Magnetic agitation 2h makes it fully react under environment；
（2）Then solution is placed in Rotary Evaporators, sets the temperature of rotary evaporation as 70 DEG C, until obtaining white crystal；
（3）White crystal is placed in the vacuum drying chamber that temperature is 100 DEG C again and keeps the temperature 24h, that is, obtains dry methylpyridinium iodide
Ammonium white crystal；
（4）FT0 electro-conductive glass is successively cleaned by ultrasonic 10min with distilled water, alcohol and acetone, then again on electro-conductive glass
Spin coating Ti02Porous support layer, rotating speed are 3500 rpms, and spin-coating time is 60 seconds；
（5）Then the sheet glass of the good shelf layer of spin coating is placed in heating plate, 30rain is kept at 500 DEG C, makes Ti02Crystallization；
（6）Weigh tin halides to be dissolved in DMF with methylpyridinium iodide ammonium, be hybridly prepared into certain density precursor solution, will prepare
Good precursor solution is placed in sonic oscillation instrument sonic oscillation 10min to promote the abundant dissolving and reaction of reactant；
（7）Precursor solution is spun on Ti02On porous support layer, rotating speed is 1000-3500 rpms, and spin-coating time is
The sheet glass of the good precursor solution of spin coating, is then placed in heating plate by 60-80S, is after 5-8min is kept at 100-150 DEG C
.
A kind of 2. preparation method of no slicker solder perovskite thin film as claimed in claim 1, it is characterised in that the step
Suddenly（7）Rotating speed be 2800 rpms, spin-coating time 80S, then the sheet glass of the good precursor solution of spin coating is placed in plus
On hot plate, 8min is kept at 120 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711126086.2A CN107958957A (en) | 2017-11-15 | 2017-11-15 | A kind of preparation method of no slicker solder perovskite thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711126086.2A CN107958957A (en) | 2017-11-15 | 2017-11-15 | A kind of preparation method of no slicker solder perovskite thin film |
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| Publication Number | Publication Date |
|---|---|
| CN107958957A true CN107958957A (en) | 2018-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711126086.2A Withdrawn CN107958957A (en) | 2017-11-15 | 2017-11-15 | A kind of preparation method of no slicker solder perovskite thin film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802044A (en) * | 2019-01-07 | 2019-05-24 | 东华大学 | A kind of method of room temperature preparation high quality perovskite thin film |
| CN111180589A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | High-stability perovskite solar cell prepared based on ultrasonic oscillation annealing process |
-
2017
- 2017-11-15 CN CN201711126086.2A patent/CN107958957A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802044A (en) * | 2019-01-07 | 2019-05-24 | 东华大学 | A kind of method of room temperature preparation high quality perovskite thin film |
| CN111180589A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | High-stability perovskite solar cell prepared based on ultrasonic oscillation annealing process |
| CN111180589B (en) * | 2019-12-30 | 2022-04-19 | 电子科技大学 | High-stability perovskite solar cell prepared based on ultrasonic oscillation annealing process |
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Application publication date: 20180424 |