CN107946343A - Dot structure and oled panel - Google Patents
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- CN107946343A CN107946343A CN201711129495.8A CN201711129495A CN107946343A CN 107946343 A CN107946343 A CN 107946343A CN 201711129495 A CN201711129495 A CN 201711129495A CN 107946343 A CN107946343 A CN 107946343A
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- 239000010409 thin film Substances 0.000 claims description 44
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- 238000004020 luminiscence type Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 10
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
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Abstract
The embodiment of the present invention provides a kind of dot structure and oled panel.The dot structure includes at least two layers stacked structure, includes one or two sub-pixel structure per Rotating fields；Each sub-pixel structure includes luminescence unit and the light-emitting surface positioned at luminescence unit and the first electrode and second electrode with light-emitting surface opposite side；Insulating layer is provided between adjacent two layers sub-pixel structure.
Description
Technical Field
The invention relates to the field of microelectronics and photoelectric semiconductors, in particular to a pixel structure and an OLED panel.
Background
In the prior OLED technology, the pixel structure arrangement mode is generally printed in the same plane for arrangement, but the arrangement mode has the defects of poor resolution in the OLED high-resolution display technology, or has the phenomenon of sub-pixel separation under an optical system, and the improvement space is not large. Therefore, the pixel structure of the OLED needs to be further improved.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a pixel structure and an OLED panel.
The pixel structure provided by the embodiment of the invention comprises at least two layers of superposed structures, wherein each layer of structure comprises one or two sub-pixel structures;
each sub-pixel structure comprises a light-emitting unit, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on the light-emitting surface of the light-emitting unit and on the side opposite to the light-emitting surface;
an insulating layer is arranged between two adjacent layers of sub-pixel structures.
Preferably, the second electrode of each sub-pixel structure is respectively connected with a thin film transistor to receive a driving signal transmitted through the thin film transistor and control the corresponding light emitting unit to emit light.
Preferably, the thin film transistors connected to the second electrodes of the sub-pixel structures correspondingly stacked in the two adjacent layers are disposed on the same side of the pixel structure, and a shielding layer is disposed between two adjacent thin film transistors.
The shielding layer arranged between the thin film transistors can effectively prevent the mutual influence between two adjacent thin film transistors,
preferably, each layer of the structure is provided with one sub-pixel structure, and two different thin film transistors connected with the second electrodes of two adjacent layers of the sub-pixel structures are arranged on two opposite sides of the pixel structure.
The arrangement of the two thin film transistors on opposite sides of the pixel structure effectively prevents the two thin film transistors from interacting with each other.
Preferably, the pixel structure comprises three layers, each layer comprises a sub-pixel structure; or;
the pixel structure comprises three layers of structures, wherein the first layer of structure and the second layer of structure respectively comprise a sub-pixel structure, and the third layer of structure comprises two sub-pixel structures; or,
the pixel structure comprises a two-layer structure, and the first layer structure and the second layer structure respectively comprise two sub-pixel structures; or,
the pixel structure comprises a two-layer structure, wherein the first layer structure comprises a sub-pixel structure, and the second layer structure comprises two sub-pixel structures; or,
the pixel structure comprises four layers of structures, and each layer of structure comprises a sub-pixel structure.
In the five structures, the light emitting units of each pixel structure are completely overlapped or partially overlapped, so that the resolution of the pixel structure is higher, and the size of the pixel structure is smaller compared with the existing pixel structure.
Preferably, the insulating layer, the first electrode and the second electrode are made of transparent materials.
The insulating layer, the first electrode and the second electrode are made of transparent materials, so that the insulating layer, the first electrode and the second electrode can be prevented from blocking light rays of other layers.
Preferably, the electrode farthest from the light-emitting surface is an electrode having a reflection function, and the electrode farthest from the light-emitting surface is a first electrode or a second electrode; or,
the pixel structure further comprises a reflecting layer, and the reflecting layer is arranged on one side far away from the light emergent surface.
The light leakage can be reduced through the action of the reflecting layer, so that the display effect of the pixel unit is better.
Preferably, the light emitting units of the pixel structure include a blue light emitting unit and a red light emitting unit; the sub-pixel structure corresponding to the blue light-emitting unit is arranged in a layer of structure close to the light-emitting surface; the sub-pixel structure corresponding to the red light-emitting unit is arranged in a layer of structure farthest from the light-emitting surface.
Because the blue light is the light with the shortest wavelength of the three primary colors, and the red light is the light with the longest wavelength of the three primary colors, the light-emitting unit corresponding to the blue light is arranged at the position closest to the light-emitting surface, and the light-emitting unit corresponding to the red light is arranged at the position farthest from the light-emitting surface, and due to the difference of energy gaps of different light-emitting materials, the light absorption among the light-emitting units can be reduced, and the display effect of the pixel unit is improved.
The embodiment of the invention also provides an OLED panel, which comprises a plurality of the pixel structure arrays, wherein the first electrodes in each layer structure of all the pixel structures of the OLED panel are integrated to form a plurality of first electrode layers.
Preferably, the OLED panel further includes a conductive structure electrically connecting the plurality of first electrode layers.
The first electrode layers are electrically connected, the first electrode layers can be uniformly grounded, and the manufacturing process of the OLED panel is simpler.
Compared with the prior art, the pixel structure and the OLED panel provided by the embodiment of the invention have the advantages that the pixel structure is arranged into a multilayer structure, so that the size of the pixel structure is smaller, and the resolution is higher.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of a pixel structure according to a first embodiment of the invention.
Fig. 2 is a schematic diagram of a pixel structure according to a second embodiment of the invention.
Fig. 3 is a schematic diagram of a pixel structure according to a third embodiment of the invention.
Fig. 4 is a schematic diagram of a pixel structure according to a fourth embodiment of the invention.
Fig. 5 is an arrangement diagram of two sub-pixel structures arranged in a layer structure of a pixel structure provided in the invention.
Fig. 6 is an arrangement diagram of two sub-pixel structures arranged in a layer structure of a pixel structure provided in the invention.
Fig. 7 is a schematic diagram of a pixel structure according to a fifth embodiment of the invention.
Fig. 8 is a schematic diagram of a pixel structure according to a sixth embodiment of the invention.
Fig. 9 is a schematic diagram of a pixel structure according to a seventh embodiment of the invention.
Fig. 10 is an exploded view of an OLED panel according to an eighth embodiment of the invention.
Icon: 100-pixel structure; 110-a first electrode; 112-a second electrode; 114-a blue light emitting cell; 116-a green light emitting unit; 118-a red light emitting unit; 120-an insulating layer; 122-thin film transistor; 1221 — a first thin film transistor; 1222-a second thin film transistor; 1223-a third thin film transistor; 124-pixel definition layer; 126-a shielding layer; 128-a reflective layer; 130-a conductive structure; 132-white light emitting cell.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the present invention usually visit when in use, and are merely for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; either directly or indirectly through intervening media, or may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Fig. 1 is a diagram illustrating a pixel structure 100 according to a preferred embodiment of the invention. As shown in fig. 1, the pixel structure 100 includes at least two stacked layers, each layer including one or two sub-pixel structures. Each sub-pixel structure includes a light emitting unit, and a first electrode 110 and a second electrode 112 located on a light emitting surface of the light emitting unit and on a side opposite to the light emitting surface. An insulating layer 120 is disposed between two adjacent layers of the sub-pixel structures.
In one embodiment, as shown in fig. 1, the first electrode 110 may be disposed on a side close to the light emitting surface, and the second electrode 112 may be disposed on a side away from the light emitting surface. In another embodiment, the first electrode 110 may be disposed on a side away from the light emitting surface, and the second electrode 112 is disposed on a side close to the light emitting surface.
In this embodiment, the light emitting unit may be a blue light emitting unit 114, a green light emitting unit 116, a red light emitting unit 118, or a white light emitting unit 132.
In this embodiment, a pixel defining layer 124 may be disposed on the outer circumference of each light emitting cell. The mutual influence of the adjacent light-emitting units can be effectively avoided.
In this embodiment, the second electrode 112 is a driving electrode. The second electrode 112 of each sub-pixel structure is respectively connected to the thin film transistor 122 to receive the driving signal transmitted through the thin film transistor 122 and control the corresponding light emitting unit to emit light.
In one embodiment, as shown in fig. 1, the second electrode 112 in each layer of the pixel structure 100 is connected to a thin film transistor 122. As shown in fig. 1, the first thin film transistor 1221 is connected to the second electrode 112 corresponding to the blue light emitting unit 114; the second electrode 112 corresponding to the green light emitting unit 116 is connected to a second thin film transistor 1222; the third thin film transistor 1223 is connected to the second electrode 112 corresponding to the red light emitting unit 118.
In another embodiment, as shown in fig. 2, via holes are disposed on the second electrode 112, and the second electrode 112 in each layer structure is connected to the plurality of thin film transistors 122 disposed in one layer structure through a conductive structure. That is, the thin film transistor 122 corresponding to the second electrode 112 of each layer is disposed in one of the layer structures.
The number of the thin film transistors 122 may be set by those skilled in the art as required.
In this embodiment, the pixel structure 100 includes three layers, and each layer includes a sub-pixel structure. As shown in fig. 1 or 3, fig. 1 and 3 illustrate a three-layer pixel structure 100 with two different structures. Fig. 1 shows a structure in which the blue light-emitting unit 114, the green light-emitting unit 116, and the red light-emitting unit 118 completely overlap. Fig. 3 shows a structure in which the blue light-emitting unit 114, the green light-emitting unit 116, and the red light-emitting unit 118 do not completely overlap.
In one embodiment, as shown in fig. 1, the first electrode 110, the second electrode 112 and the blue light emitting unit 114 on the side of the pixel structure close to the light emitting surface can cover the first thin film transistor 1221. Through the arrangement, the arrangement of the pixel structures is more compact, and the influence of the gap area on a visual picture is reduced.
In this embodiment, the thin film transistors 122 connected to the second electrodes 112 of the sub-pixel structures stacked in two adjacent layers are disposed on the same side of the pixel structure 100, and the shielding layer 126 is disposed between two adjacent thin film transistors 122.
In one embodiment, as shown in fig. 1, the shielding layer 126 is formed on the insulating layer 120 between two adjacent layers of the sub-pixel structures at a position corresponding to the thin film transistor 122, for example, the shielding layer 126 is disposed on the insulating layer 120 between the first thin film transistor 1221 and the second thin film transistor 1222, and the shielding layer 126 is disposed on the insulating layer 120 between the second thin film transistor 1222 and the third thin film transistor 1223. In another embodiment, the shielding layer 126 is built in the thin film transistor 122, for example, the shielding layer 126 is disposed on the first thin film transistor 1221 near the second thin film transistor, and the shielding layer 126 is disposed on the second thin film transistor 1222 near the third thin film transistor.
In another embodiment, as shown in fig. 3, the pixel structure 100 is a structure in which the blue light emitting unit 114, the green light emitting unit 116 and the red light emitting unit 118 are not completely overlapped. The first thin film transistor 1221 is disposed near an edge of the blue light emitting unit 114, the second thin film transistor 1222 is disposed near an edge of the green light emitting unit 116, and the third thin film transistor 1223 is disposed near an edge of the red light emitting unit 118.
In this embodiment, each layer of the structure is provided with one sub-pixel structure, and two different thin film transistors 122 connected to the second electrodes 112 of two adjacent sub-pixel structures are disposed on two opposite sides of the pixel structure 100.
In this embodiment, the insulating layer 120, the first electrode 110 and the second electrode 112 are made of transparent materials.
In one embodiment, as shown in fig. 1, the pixel structure 100 further includes a reflective layer 128, and the reflective layer 128 is disposed on a side away from the light emitting surface. An insulating layer 120 is disposed between the light-emitting surface and the lower side of the red light-emitting unit 118.
In another embodiment, the electrode farthest from the light emitting surface is the electrode with the reflection function, and the electrode farthest from the light emitting surface is the first electrode 110 or the second electrode 112. In one example, as shown in fig. 1, the electrode farthest from the light-emitting surface is the second electrode 112, and the second electrode 112 is an electrode having a reflective function. In this embodiment, the reflective layer 128 shown in fig. 1 and the insulating layer 120 between the reflective layer 128 and the second electrode 112 may be omitted.
In detail, the three primary colors include blue light, green light and red light, wherein the wavelength of the blue light is between 400nm and 480nm, the wavelength of the green light is between 500nm and 560nm, and the wavelength of the red light is between 610nm and 75 nm. In this embodiment, the light emitting units of the pixel structure 100 include a blue light emitting unit 114 and a red light emitting unit 118; the sub-pixel structure corresponding to the blue light-emitting unit 114 is arranged in a layer of structure close to the light-emitting surface; the sub-pixel structure corresponding to the red light emitting unit 118 is disposed in a layer of structure farthest from the light emitting surface. The light absorption of the pixel structure 100 can be minimized by the above arrangement, so that the display effect of the pixel structure 100 is better.
According to the pixel structure 100 provided by the embodiment of the invention, the pixel structure 100 is set to be a multilayer structure, so that the size of the pixel structure 100 is smaller, and the resolution is higher.
In another embodiment, the pixel structure 100 includes a two-layer structure, a first layer structure including one sub-pixel structure, and a second layer structure including two sub-pixel structures.
In one embodiment, as shown in fig. 4, one sub-pixel structure is disposed in the upper layer of the pixel structure 100, and two sub-pixel structures are disposed in the lower layer. In one example, the sub-pixel structure of the upper layer structure includes a blue light emitting unit; the lower layer structure comprises a sub-pixel unit corresponding to the red light emitting unit and a sub-pixel unit corresponding to the green light emitting unit. In other embodiments, two sub-pixel structures are disposed in the upper layer of the pixel structure 100, and one sub-pixel structure is disposed in the lower layer.
In another embodiment, two sub-pixel structures are disposed in the upper layer of the pixel structure 100, and one sub-pixel structure is disposed in the lower layer.
In one embodiment, as shown in fig. 5, the sub-pixel structures may be rectangular, and the two sub-pixel structures disposed in one layer of the two sub-pixel structures may be arranged in a long parallel manner of the sub-pixel structures.
In another embodiment, as shown in fig. 6, the sub-pixel structures may be rectangular, and the two sub-pixel structures disposed in one layer of the two sub-pixel structures may be arranged in a wide parallel manner of the sub-pixel structures.
For other details of the present embodiment, further reference may be made to the description of the above embodiments, which are not repeated herein.
In another embodiment, the pixel structure 100 includes four layers, each layer including one sub-pixel structure. As shown in fig. 7, the four sub-pixel structures are respectively a sub-pixel structure corresponding to the blue light unit, a sub-pixel structure corresponding to the green light unit, a sub-pixel structure corresponding to the red light unit, and a sub-pixel structure corresponding to the white light unit. In one embodiment, the order of stacking from the side close to the light-emitting surface of the pixel structure 100 is: the pixel structure comprises a sub-pixel structure corresponding to a blue light unit, a sub-pixel structure corresponding to a green light unit, a sub-pixel structure corresponding to a red light unit and a sub-pixel structure corresponding to a white light unit. In other embodiments, the order of the sub-pixel structures may be changed arbitrarily.
For other details of the present embodiment, further reference may be made to the description of the above embodiments, which are not repeated herein.
In another embodiment, the pixel structure 100 includes a three-layer structure, the first layer structure and the second layer structure respectively include one sub-pixel structure, and the third layer structure includes two sub-pixel structures. The third layer structure may be disposed in the middle of the illustration, on the upper side of the illustration, or on the lower side of the illustration of the pixel structure 100. As shown in fig. 8, two pixel structures 100 are provided on the lower side of the drawing. In one example, a sub-pixel structure corresponding to a blue light emitting unit is disposed in an upper layer structure of the pixel structure 100, and a sub-pixel structure corresponding to a green light emitting unit is disposed in a middle layer structure of the pixel structure 100; the lower layer of the pixel structure 100 is provided with a sub-pixel structure corresponding to the red light emitting unit and a sub-pixel structure corresponding to the white light emitting unit.
For other details of the present embodiment, further reference may be made to the description of the above embodiments, which are not repeated herein.
In another embodiment, the pixel structure 100 includes a two-layer structure, and the first layer structure and the second layer structure respectively include two sub-pixel structures. In one embodiment, as shown in fig. 9, a sub-pixel structure corresponding to a blue light emitting unit and a sub-pixel structure corresponding to a green light emitting unit are disposed in an upper layer structure of the pixel structure 100. The lower layer of the pixel structure 100 is provided with a sub-pixel structure corresponding to the red light emitting unit and a sub-pixel structure corresponding to the white light emitting unit. In other embodiments, the sub-pixel structures of each layer of the pixel structure 100 may be arranged in any desired mixture.
For other details of the present embodiment, further reference may be made to the description of the above embodiments, which are not repeated herein.
The embodiment of the present invention further provides an OLED panel, which includes a plurality of the above-mentioned pixel structure 100 arrays, and the first electrodes 110 in each layer of all the pixel structures 100 of the OLED panel are formed into a whole to form a plurality of first electrode layers.
In this embodiment, as shown in fig. 10, the OLED panel further includes a conductive structure 130, and the conductive structure 130 electrically connects the plurality of first electrode layers. In this embodiment, the conductive structure 130 may be made of the same material as the first electrode layer.
According to the OLED panel provided by the embodiment of the invention, the pixel structure 100 is set to be a multilayer structure, so that the size of the pixel structure 100 is smaller, and the resolution is higher.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A pixel structure, characterized in that it comprises at least two layers of stacked structures, each layer of structures comprising one or two sub-pixel structures;
each sub-pixel structure comprises a light-emitting unit, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on the light-emitting surface of the light-emitting unit and on the side opposite to the light-emitting surface;
an insulating layer is arranged between two adjacent layers of sub-pixel structures.
2. The pixel structure according to claim 1, wherein the second electrode of each sub-pixel structure is respectively connected to a thin film transistor to receive a driving signal transmitted through the thin film transistor and control the corresponding light emitting unit to emit light.
3. The pixel structure according to claim 2, wherein the thin film transistors connected to the second electrodes of the sub-pixel structures corresponding to the stacked adjacent two-layer structure are disposed on the same side of the pixel structure, and a shielding layer is disposed between adjacent two of the thin film transistors.
4. The pixel structure of claim 2, wherein one sub-pixel structure is disposed in each layer, and two different thin film transistors connected to the second electrodes of two adjacent layers of sub-pixel structures are disposed on opposite sides of the pixel structure.
5. The pixel structure according to any of claims 1-4, wherein the pixel structure comprises a three-layer structure, each layer comprising one sub-pixel structure; or;
the pixel structure comprises three layers of structures, wherein the first layer of structure and the second layer of structure respectively comprise a sub-pixel structure, and the third layer of structure comprises two sub-pixel structures; or,
the pixel structure comprises a two-layer structure, and the first layer structure and the second layer structure respectively comprise two sub-pixel structures; or,
the pixel structure comprises a two-layer structure, wherein the first layer structure comprises a sub-pixel structure, and the second layer structure comprises two sub-pixel structures; or,
the pixel structure comprises four layers of structures, and each layer of structure comprises a sub-pixel structure.
6. The pixel structure of claim 1, wherein the insulating layer, the first electrode, and the second electrode are transparent.
7. The pixel structure of claim 1, wherein the electrode farthest from the light-emitting surface is a reflective electrode, and the electrode farthest from the light-emitting surface is a first electrode or a second electrode; or,
the pixel structure further comprises a reflecting layer, and the reflecting layer is arranged on one side far away from the light emergent surface.
8. The pixel structure according to claim 1, wherein the light emitting cells of the pixel structure include a blue light emitting cell and a red light emitting cell; the sub-pixel structure corresponding to the blue light-emitting unit is arranged in a layer of structure close to the light-emitting surface; the sub-pixel structure corresponding to the red light-emitting unit is arranged in a layer of structure farthest from the light-emitting surface.
9. An OLED panel comprising a plurality of pixel structure arrays according to any one of claims 1-8, wherein the first electrodes of each of the pixel structures of the OLED panel are integrally formed to form a multi-layer first electrode layer.
10. The OLED panel of claim 9, further comprising conductive structures electrically connecting the plurality of first electrode layers.
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| CN110265456A (en) * | 2019-06-27 | 2019-09-20 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110828504A (en) * | 2019-12-11 | 2020-02-21 | 苏州大学 | Pixel structure, manufacturing method and panel |
| WO2020082636A1 (en) * | 2018-10-23 | 2020-04-30 | 武汉华星光电半导体显示技术有限公司 | Display panel, fabrication method therefor and display module |
| CN111129327A (en) * | 2019-12-24 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Full-color display panel and full-color display device |
| CN112909053A (en) * | 2021-01-26 | 2021-06-04 | 京东方科技集团股份有限公司 | Display device, display panel and manufacturing method thereof |
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