CN107923061A - The method of electric isolution or insulating regions is produced in a metal and includes the product in this region - Google Patents
The method of electric isolution or insulating regions is produced in a metal and includes the product in this region Download PDFInfo
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- CN107923061A CN107923061A CN201680043380.4A CN201680043380A CN107923061A CN 107923061 A CN107923061 A CN 107923061A CN 201680043380 A CN201680043380 A CN 201680043380A CN 107923061 A CN107923061 A CN 107923061A
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- metal
- metal structure
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/022—Anodisation on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/026—Anodisation with spark discharge
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/20—Electrolytic after-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/04—Etching of light metals
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to a kind of method and a kind of product for including this region for producing electric isolution or insulating regions in a metal.The method according to the invention comprises the following steps：Metal structure is provided；Perform plasma electrolytic oxidation and/or anodized so that realize oxide layer on the region of the metal structure；And by removing part metals structure and/or other metal structure being connected to the metal structure with oxide layer, it is electrically isolated a part for the metal structure.
Description
Technical field
The present invention relates to a kind of method for producing electric isolution or insulating regions in a metal.These regions are used for various answer
With, including electronic device.More specifically, the method according to the invention is related to form the electric isolution with being connected by non-conductive section
The metal structure in region.In this case, isolate and insulate and all describe the electrically separated of region and other parts, and can be with
It is used alternatingly in the context of the present invention.
Background technology
Traditional electronic devices, include the use of the mobile phone of antenna, tablet computer, computer, laptop computer etc. and calculate
The problem of device, often covers antenna with shell, so as to add the risk for hindering communication and/or producing noise.
The content of the invention
The purpose of the present invention is improve the traditional product with electrically isolated area.
The purpose is realized by producing the method for electrically isolated area in a metal, and this method comprises the following steps：
Metal structure is provided；
Perform plasma electrolytic oxidation and/or anodized so that realized on the region of the metal structure
Oxide layer；And
By removing a part for metal structure and/or other metal structure being connected to the metal by oxide layer
Structure, is electrically isolated a part for the metal structure.
Processed structure can be used for various applications, including electronic device.More specifically, the method according to the invention is related to
Form the metal structure with the electrically isolated area by non-conductive section connection.This structure can be advantageously used for antenna or day
Line component, for example, RF antennas.Make an uproar for example, being related to this antenna made according to the method for the present invention and can improve with less
The communication of sound.
In presently preferred embodiment according to the present invention, the thickness of ceramic layer is in the range of 5 μm -300 μm, preferably
Ground is in the range of 10 μm -200 μm, and more preferably in the range of 15-150 μm, most preferably thickness is about 100 μm.
By providing the ceramic layer with adequate thickness, the stability and intensity of heater are improved.In addition, thermal insulation layer increases
Add, heat transfer and/or heat can be controlled to produce.Preferably, the thickness of ceramic layer is made to adapt to required characteristic.Production period
The further advantage this flexibility provides the system according to the present invention.
In presently preferred embodiment according to the present invention, on the conductor with plasma electrolytic oxidation (PEO)
Or place provides ceramic layer.
The principle of PEO processing is disclosed in WO2011/010914, and it is incorporated herein by reference.Element preferably by
Aluminum or other suitable materials (for example, titanium) are made, and grow porous metals oxygen on it by plasma electrolytic oxidation
Change layer (for example, aluminium oxide or titanium oxide).In this presently preferred embodiment of the present invention, metal oxide layer is arranged on gold
Belong to being related on the side of plasma oxidation processing (more specifically, plasma electrolytic oxidation processing) for layer.By first
Plasma electrolytic oxidation processing is partly carried out on metal layer, more than the electrical breakdown current potential of the oxide-film on metal layer, concurrently
Raw electric discharge.This electric discharge causes a kind of local plasma reactor according, causes the growth of oxide.This establishes required for film layer
Structure.Plasma electrolytic oxidation processing produces very thin hole in the metal layer, so as to be formed containing foraminate oxide layer.
The method provides can be with the ceramic layer of high efficiency manufacture., it is surprising that the hole size of the ceramic layer can also more be had
The control of effect ground, and can more accurately reach the desired characteristic of this ceramic layer.Another advantage of the method according to the invention
It is that can manufacture ceramic material in a modular manner.Alternatively, this makes it possible to provide the complicated three-dimensional shaped for it is expected element
Shape.
Plasma electrolytic oxidation cause by by metal (part) be oxidized to metal oxide and from metal (>130
μm) growth thicker aluminium, titanium or other suitable metal layers.The use of particularly titanium provides good result.It is obtained
Layer is porous, flexible and elasticity metal oxide ceramic.Compared with the anodic oxidation (15V-21V) of standard, plasma
Electrolytic oxidation (>350V-550V) need much higher voltage.Under this high voltage, go out on the surface of aluminium or other materials
Existing micro-arc discharge, and cause the growth of (metal) oxide layer of thickness.The result shows that the pottery of about 13 μ m-thicks can be realized on aluminium foil
Enamel coating, has flexible and elasticity ceramic layer.It is using one of the advantageous effects of plasma electrolytic oxidation to provide ceramic layer,
Due to the growth in during oxidation from the layer of metal, so the adhesiveness of ceramic layer and metal is very good.
Replacement manufacture method for producing electrically isolated area in a metal includes sintering or spark plasma sintering, passes through
Superficial layer, anodic oxidation and the plasma spraying for coming oxidized metal are heated in oxygen-enriched environment.Moreover, it can for example use electric arc
The coating of deposition of aluminum or other materials on the conductor of heating element is sprayed on, and utilizes plasma electrolytic oxidation by deposition
Material oxidation is into oxide.
As the alternative solution of PEO, or it is in combination, ceramic layer can be provided using anodized.In general,
Anodic oxidation occurs under the voltage of 1V to 300V DC, although most of fall into the range of 15V to 21V.For in sulfuric acid and
The thicker coating formed in organic acid, it usually needs higher voltage.In general, the electric current applied is in 30 to 300 peaces/rice2's
In the range of.
Obtained ceramic layer can have hole of the diameter in the range of 1nm-150nm on the interface of metal/ceramic layer,
And there is hole of the diameter in 50nm-5 μ ms in outside.For Application in Building, the thickness of ceramic layer can from 0.5 μm with
It is lower to arrive up to 150 μm.
In presently preferred embodiment of the invention, this method includes being electrically isolated metal by removing part metals structure
The step of a part for structure.This provides separate part/element of electric isolution in metal structure.
Alternatively or in connection, the method in another currently preferred embodiment of the invention includes will be another with oxide layer
The step of outer metal structure is connected to the metal structure.Due to being related to the process conditions of high temperature and high pressure, so metal oxygen
Change layer to melt during plasma oxidation and solidify again in cooling procedure.If further metal structure be oriented to
Metal structure approaches, then the oxide layer of corresponding construction will be freezing together, and is thus connected metal structure, is preferably simultaneously electrically isolated
Metal structure.
In the currently preferred one embodiment of the present invention, the method is further included following steps：It is golden described in mask
Belong to the part of structure and perform the plasma electrolytic oxidation and/or anodic oxidation so that in the metal structure not
Oxide layer is realized on masks area.This provides a kind of effective ways that structure or isolation structure are provided for metal structure.
Preferably, after the plasma electrolytic oxidation processing is performed, a part for the metal structure is removed.This
Make it possible to the efficient oxidation.It is highly preferred that removing part metals structure includes performing etching process, for example, chemical etching or electricity
Chemical etching.
In a currently preferred embodiment, etching is related to chemical etching.
Chemical etching (is also referred to as electrical-chemistry method (ECM) and preferably includes injection electrical-chemistry method (JET-
ECM accurately and fast being removed with reproducible part for the material of the first metal layer)) is allowed., it is surprising that in the etching
During, it is found that etching the first metal layer will not significant impact metal oxide layer.In fact, metal oxide layer has been kept substantially
It is good, and metal is fallen by local etching.This for example can efficiently and effectively manufacture the product including electrically isolated area.Producing
Removal step is performed after raw oxide layer, further improves the electric isolution of respective regions.For example, this can prevent or reduce
Undesirable on horizontal direction is heaved and/or aoxidized.This improves the quality of final products.Moreover, this can further subtract
Few noise jamming.As further advantage, the etching process applied can be automatically stopped when reaching oxide layer.This improves
The isolation of effective offer.
In a currently preferred embodiment, this method further includes to the region that removes of metal structure and provides non-conducting material
Step.
The quality of products obtained therefrom is further increased using non-conducting material.In currently preferred implementation according to the present invention
In example, the method is further included following steps：After the plasma electrolytic oxidation is performed, by the metal
Stabilized zone is provided in the oxide layer of structure, increases the stability and/or intensity of the metal structure.
By providing stabilized zone, the strength and stability of metal structure significantly improves.Which improve etching performance.It is preferred that
Ground, stabilized zone includes non-conducting material, for example, epoxy resin.
In a presently preferred embodiment with stabilized zone, the scope of the thickness of stabilized zone at 10 μm to 100 μm
Interior, preferably in the range of 20 μm to 75 μm, most preferably thickness is about 50 μm.It has been shown that this thickness improves surely
Qualitative and intensity, so as to fulfill or improve the possibility being processed further, for example, chemical etching.
In presently preferred embodiment according to the present invention, this method further includes the step of removing stabilized zone.
Alternatively, stabilized zone is removed after etching process is performed.This is likely to be dependent on the actual use or application of product.
In the further currently the preferred process of the present invention, the method is further comprising the steps of：3rd metal is provided
Structure, other metal structures are linked together.Preferably, this 3rd metal structure is preferably in plasma oxidation processing
Middle other metal structures by two link together.Alternatively, two, at least one in three other metal structures be different
Material.For example, in one embodiment, the 3rd metal structure is the sacrificial metal knot that can be used for connecting other metal structures
Structure.One example of this embodiment is to use titanium structure to sacrifice structure as the 3rd for connecting two constructed of aluminiums.Into
In one step example, the metal structure of aluminium, magnesium and titanium links together.
The invention further relates to product according to the present invention, which includes the electrically isolated area manufactured with preceding method.
The product provides the effect and advantage identical with described in this method.
Preferably, this product is computing device, for example, mobile phone, tablet computer, computer, laptop computer
Deng, and the region is a part for antenna.Preferably, the influence of undesirable noise can be substantially reduced in communication.The production
Product can have different shapes or configuration.For example, the metal structure of the product can be including in tubular form, metal structure
Metallic netted structural or wire form.
Brief description of the drawings
Based on its preferred embodiment, other advantages, features, and details of the invention are illustrated, wherein, referring to the drawings, wherein：
Fig. 1 shows the battery and metal for carrying out plasma oxidation according to the present invention；
Fig. 2 shows the cross section for the product that the method according to the invention produces；
Fig. 3 shows the top view of the product shown in Fig. 2；
Fig. 4 shows the process of the embodiment with stabilized zone according to the present invention；And
Fig. 5 A to Fig. 5 D show different embodiments of the invention with two or more metal structures.
Embodiment
Sheet metal 2 (Fig. 1) carries out plasma oxidation, to form oxide layer 4 on a metal plate.In order in the side of metal
With ceramic layer is manufactured on specific region, as shown in Figure 1, metal is placed in plasma electrolytic oxidation battery 6.
Metallic plate 2 is preferably aluminium, is connected to anode.Alternative materials titanium, magnesium or other so-called valve gold can also be used
Belong to.Synthetic material 8 shown in figure can be duroplasts, it can be compressed on another duroplasts, be had between two duroplasts
Metallic plate 2 and the rubber 10 for sealing.The synthetic material 8 is used as mask material, to form plasma in non-masks area 12
Body electrolytic oxidation thing 4.It can carry out mask metal plate 2 using different types of shape.
10 sealed cell of elastomeric material and mask metal 2.Synthetic material 8 also serves as mask.In this electricity as described herein
In pond 6, the part 12 not only being masked is handled by plasma electrolytic oxidation.Plasma electrolytic oxidation (PEO) or
Differential arc oxidation forms non-conductive metal oxide layer 4 on metallic plate 2.Can be by for the different electrolyte of PEO process choices
To adjust different property, for example, the color of layer.The electrolyte that can be used includes the KOH that such as concentration range is 0-10g/l
(potassium hydroxide) and concentration range are the Na of 0-10g/l2SiO3 5H2O.It was found from document, these electrolyte or these electrolysis
The mixture of matter can produce good PEO layer on aluminium.Other salt can also be used, for example, Na2AlO2Or Na2SiF6
(NaPO3)6, potassium borate K2B4O7Or Boratex Na2B4O.It should be understood that other alternatives can also be contemplated according to the present invention
Case.
In the illustrated embodiment of the present invention, the structure of hardware 2 includes titanium, aluminium or any other valve metal
Thin plate or piece, other valve metals are, for example, magnesium, zirconium, zinc, niobium, vanadium, hafnium, tantalum, molybdenum, tungsten, antimony, bismuth or one or more aforementioned metals
Alloy.Plate or piece 2 are coated on another side by plasma electrolytic oxidation.By the way that titanium plate or piece 2 are placed on electrolyte
In carry out plasma electrolytic oxidation.For example, electrolyte includes 15g/l (NaPO3)6With 8g/l Na2SiO3.5H2O.Dielectric
It is maintained at by cooling at a temperature of 25 DEG C.Plate or piece 2 are used as anode and are placed in the container containing electrolyte.Stainless steel is cloudy
Pole 12 is set around plate or piece 2.Current density between plate or piece and cathode 22 is maintained at about 0.15A/cm2.With about 1000Hz
Pulse mode apply electric current.Electric current is rapidly increased to about 500 volts between plate or piece and cathode 22.This is in positive plate or piece
Plasma electrolytic oxidation process is produced on 2 and creates ceramic layer 4.It should be understood that procedure parameter may depend on the knot of plate or piece
Structure and/or its size.
Ceramic layer 4 is obtained after PEO techniques, the layer thickness of ceramic layer 4 depends on processing time.In order to obtain and gold
Belong to 2 components 14 being electrically isolated, it is necessary to remove the metal 14 for remaining adhered to ceramic layer 4.There are many methods to remove metal.Electricity
Chemical process is very effective going the aspect of metal 14 below removing oxide layer 4, and is the currently preferred implementation of the present invention
Example.
After plasma oxidation processing, metallic plate is transferred to etching battery.In this battery, pass through electrochemistry
Processing etching metal.The plate is installed in the cell, and metal covering is towards cathode.This cathode portion by metal and plastics group
Into.The form of metal of cathode determines the shape and size etched in metallic plate.Cathode and anode (metal oxide layer it is another
Metallic plate on side) between apply impulse electric field.The electrolysis liquid stream of highly conductive is provided between the anode and cathode.In anode
Potential difference between cathode starts between 10-15 is lied prostrate, and gradually increases in etching process.When metal is etched and is reached
During metal oxide layer, current potential sharply increases.Then, which stops.Current density is protected in about 250kA/m2Value.The process is produced
Raw metallic plate, has metal oxide layer and the structure etched in a metal on side.Fluid can pass through opening in metal
Structure is put to be filtered.Metal oxide layer can be during filtering by being optionally positioned between metal oxide layer and metallic plate
Metallic plate and/or (paper) filter support.Since the surface roughness of metal oxide layer is high, so infiltration water can easily flow
It can separate to side and with feedwater.This filtering configuration also allows the high filtration pressure in 5 Palestine and Israels.
Test shows that PEO techniques are combined with Electrolyzed Processing, obtains the product of high quality, for example, non-in desired position
Often accurately remove metal.
For example, after plasma oxidation (PEO) step is performed, or if with relatively low after anodization step
Current potential performs the process, then can remove part metals 14 from opposite side for example, by electrical-chemistry method.Electrical-chemistry method it is excellent
Point is that when reaching non-conductive ceramic layer 4 process stops.The opening of formation can be filled with non-conductive polymer 16 or its
His material.So do, create electrically isolated area 18.
The cross section of product 20 formed in this way is shown in Fig. 2.The top view of product 20 can be such as Fig. 3 institutes
Show.
According to a preferred embodiment of the present invention, manufacturing process 102 (Fig. 4) starts from providing the metallic plate of piece
104.Using PEO techniques or anode oxidation process, ceramic layer 106 is set on the side of hardware 104.Preferably, exist
Stabilized zone 108 is provided on and/or within ceramic layer 106, to improve the stability and intensity of element 104 and ceramic layer 106.
In illustrated embodiment, stabilized zone 108 comes from epoxy resin.In the next step, ECM techniques are performed, it is another from element 104
Side sets groove, hole or opening 110.When groove, hole or opening 110 reach ceramic layer 106, ECM techniques stop.It is optional
Ground, groove, hole or opening 110 are filled with non-conducting material 112, for example, epoxy resin.Also it is alternatively possible to from ceramic layer 106
Remove stabilized zone 108.
, will by plasma electrolytic oxidation in connection method 202 according to an embodiment of the invention (Fig. 5 A)
Metal structure 204,206 is bonded together with oxide layer, and metal structure 204 is connected to the second metal structure 206.Preferably, into
Row connection so that metal structure 204,206 is electrically isolated.Alternatively, in alternative 208 (Fig. 5 B), two metal structures
210th, 212 it is connected with the 3rd metal structure 214 sacrificed.For example, the respective material for metal structure 210,212 and 214 is
Aluminium, magnesium and titanium.Alternatively, intermediate structure 214 is titanium, and other structures 210,212 are aluminium.
These structures can be shaped as plate or piece.Alternatively, other shapes are also possible.For example, at process 216 (Fig. 5 C)
In, connect two tubular metal structures 218,220.For example, this shape can serve as antenna.In another process of the present invention
In 222 (Fig. 5 D), net 224 (either alternatively electric wire) is connected to plate/piece 226 (or alternatively, electric wire).Furthermore, it is also possible to
Connect two or more electric wires.It should be understood that according to the present invention it is also contemplated that other embodiment, shape or configuration.
By plasma electrolytic oxidation and the mask metal in plasma oxidation process, and in plasma oxygen
Metal is removed by electrical-chemistry method after change and fills cavity with non-conducting material, various shapes can be formed on metal
Shape.
The present invention is never limited to its above preferred embodiment.Requested right is determined by the claims that follow, in its model
It is contemplated that many modifications in enclosing.
Claims (16)
1. a kind of method for producing electrically isolated area in a metal, comprises the following steps：
Metal structure is provided；
Perform plasma electrolytic oxidation and/or anodized so that oxidation is realized on the region of the metal structure
Layer；And
By removing the part metal structure and/or other metal structure being connected to the metal knot with the oxide layer
Structure, is electrically isolated a part for the metal structure.
2. according to the method described in claim 1, further comprise the steps：Metal structure described in masking part and perform
The plasma electrolytic oxidation and/or anodic oxidation so that realize oxide layer on the non-masks area of the metal structure.
3. method according to claim 1 or 2, wherein, performing the plasma electrolytic oxidation processing and/or anode
After oxidation processes, a part for the metal structure is removed.
4. according to the method described in claim 3, wherein, removing the part metal structure includes performing etching process.
5. according to the method described in claim 4, wherein, the etching process includes electrochemical etch process.
6. method according to claim 4 or 5, wherein, the etching process is included in automatic when reaching the oxide layer
The step of stopping the etching.
7. one or more methods in preceding claims, further comprise non-conducting material being supplied to institute
State one or more the step of removing part of metal structure.
8. one or more methods in preceding claims, further comprise the steps：Described in execution
It is steady by being provided in the oxide layer of the metal structure after plasma electrolytic oxidation and/or anodized
Given layer, increases the stability and/or intensity of the metal structure.
9. according to the method described in claim 8, wherein, the stabilized zone includes non-conducting material.
10. method according to claim 8 or claim 9, wherein, there is provided stabilized zone includes providing thickness at 10 μm to 100 μm
In the range of, preferably in the range of 20 μm to 75 μm, most preferably thickness is about 50 μm of layer.
11. according to the method described in claim 8,9 or 10, the step of further comprising removing the stabilized zone.
12. one or more methods in preceding claims, further comprise the steps：3rd gold medal is provided
Belong to structure, other metal structures are linked together.
13. one or more methods in preceding claims, wherein, at least one metal structure is different
Material.
14. a kind of product including electrically isolated area, the electrically isolated area is with one in preceding claims or more
Method manufacture described in.
15. product according to claim 14, wherein, the product is computing device, and the region is antenna
A part.
16. the product according to claims 14 or 15, wherein, the metal structure of the product includes tubular form, described
Metal mesh structure in metal structure, or wire form.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2014857 | 2015-05-26 | ||
| NL2014857 | 2015-05-26 | ||
| PCT/NL2016/050372 WO2016190737A2 (en) | 2015-05-26 | 2016-05-25 | Method to produce electrically isolated or insulated areas in a metal, and a product comprising such area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107923061A true CN107923061A (en) | 2018-04-17 |
Family
ID=56567654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680043380.4A Pending CN107923061A (en) | 2015-05-26 | 2016-05-25 | The method of electric isolution or insulating regions is produced in a metal and includes the product in this region |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20180142373A1 (en) |
| EP (1) | EP3303661A2 (en) |
| CN (1) | CN107923061A (en) |
| WO (1) | WO2016190737A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10158164B2 (en) | 2015-10-30 | 2018-12-18 | Essential Products, Inc. | Handheld mobile device with hidden antenna formed of metal injection molded substrate |
| US9882275B2 (en) | 2015-10-30 | 2018-01-30 | Essential Products, Inc. | Antennas for handheld devices |
| US9896777B2 (en) * | 2015-10-30 | 2018-02-20 | Essential Products, Inc. | Methods of manufacturing structures having concealed components |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2466103A1 (en) * | 1979-09-18 | 1981-03-27 | Lerouzic Jean | Circuit board with aluminium tracks on alumina base - uses metallic base with alumina layer over which granular aluminium is deposited and selectively oxidised to form conductive paths |
| CN1741710A (en) * | 2004-08-24 | 2006-03-01 | 三星电机株式会社 | Method of manufacturing package substrate with fine circuit pattern using anodic oxidation |
| JP2011063887A (en) * | 2010-11-05 | 2011-03-31 | Sachiko Ono | Method for producing aluminum electrode material for electrolytic capacitor excellent in etching characteristic, aluminum electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
| US20110181169A1 (en) * | 2008-05-14 | 2011-07-28 | The Board Of Trustees Of The University Of Illinoi | Microcavity and microchannel plasma device arrays in a single, unitary sheet |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2003250C2 (en) | 2009-07-20 | 2011-01-24 | Metal Membranes Com B V | Method for producing a membrane and such membrane. |
-
2016
- 2016-05-25 US US15/576,203 patent/US20180142373A1/en not_active Abandoned
- 2016-05-25 WO PCT/NL2016/050372 patent/WO2016190737A2/en active Application Filing
- 2016-05-25 EP EP16747634.0A patent/EP3303661A2/en not_active Withdrawn
- 2016-05-25 CN CN201680043380.4A patent/CN107923061A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2466103A1 (en) * | 1979-09-18 | 1981-03-27 | Lerouzic Jean | Circuit board with aluminium tracks on alumina base - uses metallic base with alumina layer over which granular aluminium is deposited and selectively oxidised to form conductive paths |
| CN1741710A (en) * | 2004-08-24 | 2006-03-01 | 三星电机株式会社 | Method of manufacturing package substrate with fine circuit pattern using anodic oxidation |
| US20110181169A1 (en) * | 2008-05-14 | 2011-07-28 | The Board Of Trustees Of The University Of Illinoi | Microcavity and microchannel plasma device arrays in a single, unitary sheet |
| JP2011063887A (en) * | 2010-11-05 | 2011-03-31 | Sachiko Ono | Method for producing aluminum electrode material for electrolytic capacitor excellent in etching characteristic, aluminum electrode material for electrolytic capacitor, and aluminum electrolytic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016190737A3 (en) | 2017-02-09 |
| US20180142373A1 (en) | 2018-05-24 |
| WO2016190737A2 (en) | 2016-12-01 |
| EP3303661A2 (en) | 2018-04-11 |
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Application publication date: 20180417 |