CN107919180A - A kind of preparation method of nano silver wire grid electrode - Google Patents
A kind of preparation method of nano silver wire grid electrode Download PDFInfo
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Abstract
The problem of annealing temperature is high when preparing nano silver wire grid electrode in the prior art to overcome, the present invention provide a kind of preparation method of nano silver wire grid electrode, including:S1, cleaning substrate:Substrate is cleaned by ultrasonic in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water respectively, nitrogen drying;S2, prepare nano silver wire alcohol mixeding liquid;S3, using nano silver wire alcohol mixeding liquid, nano silver wire grid is prepared by drop coating film build method on substrate, it is dry;Polyfluortetraethylene plate, be placed on nano silver wire grid by S4, applies through polyfluortetraethylene plate less than 14 kilograms of pressure at the temperature below 100 DEG C to nano silver wire grid consistent, continues 5~35 minutes, form nano silver wire grid electrode.Temperature needed for the nano silver wire grid electrode of method welding provided by the invention is relatively low, meets the needs of flexible device is to annealing temperature, can be applied in the photoelectric devices such as Organic Light Emitting Diode, thin film transistor (TFT) and solar cell.
Description
Technical field
The invention belongs to the sub- field of material preparation of nano photoelectric, more particularly to a kind of preparation side of nano silver wire grid electrode
Method.
Background technology
Under the background of information age, development that photoelectric device makes rapid progress, wherein, transparent conductive film is as important
Electrode material be widely used in various photoelectric devices, such as Organic Light Emitting Diode, thin film transistor (TFT), flat-panel monitor and too
Positive energy battery, application prospect are very wide.At present, in transparent conductive film market, the metal oxide such as indium tin oxygen (ITO) is thin
Film is in occupation of main share.But due to the deficiency of phosphide element content in the earth earth's crust so that the cost of ito thin film is in mistake
Increase sharply in 10 years gone.Moreover, flourish with organic and flexible electronic device, traditional metal conductive oxide
Film can not meet the needs of flexible device, and finding alternative materials of future generation becomes electrically conducting transparent area research hot spot, compares
The nano silver wire network of random arrangement is new compared with the metal grill etc. of graphene, carbon nanotubes, organic polymer, etching
Transparent conductive material all possesses certain excellent in preparation process, substrate selectivity, electric conductivity and wide spectrum high-permeability etc.
Gesture.
However, capillary force and self gravitation of the nano silver wire of random arrangement only by solution evaporation overlap and cause nano silver wire
Between there is larger contact resistance, limit the direct application of nano silver wire grid electrode.Tradition is reduced between nano silver wire
The method of contact resistance is to be sintered in 150 DEG C~170 DEG C of annealing furnace so that reaches as-welded between nano silver wire.Pass
The higher annealing temperature of system method influences the application of flexible substrate, can not meet the needs of flexible device.So it is badly in need of at this stage
A kind of low cost, technique is simple, the method that is easy to large-scale production reduces fusion temp between nano silver wire.
The content of the invention
The technical problems to be solved by the invention are for annealing temperature when preparing nano silver wire grid electrode in the prior art
Spend the problem of high, there is provided a kind of preparation method of nano silver wire grid electrode.
Technical solution is as follows used by the present invention solves above-mentioned technical problem:
A kind of preparation method of nano silver wire grid electrode is provided, is comprised the following steps:
S1, cleaning substrate:Substrate is cleaned by ultrasonic in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water respectively, nitrogen
Air-blowing is done;
S2, prepare nano silver wire alcohol mixeding liquid;
S3, using nano silver wire alcohol mixeding liquid, nano silver wire grid is prepared by drop coating film build method on substrate, is done
It is dry;
Polyfluortetraethylene plate, be placed on nano silver wire grid by S4, through polyfluortetraethylene plate at the temperature below 100 DEG C
Apply less than 14 kilograms of pressure to nano silver wire grid consistent, continue 5~35 minutes, make nano silver wire grid welding,
Form nano silver wire grid electrode.
Preferably, in the step S1, by substrate successively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water successively
It is cleaned by ultrasonic 5 minutes, then nitrogen drying.
Preferably, in the step S2, nano silver wire suspension is diluted using ethanol solution, obtaining concentration is
The nano silver wire alcohol mixeding liquid of 0.01~0.2 mg/ml.
Preferably, the nano silver wire alcohol mixeding liquid includes nano silver wire and absolute ethyl alcohol forms;The nano silver wire
In alcohol mixeding liquid, the concentration of nano silver wire is 0.1 mg/ml.
Preferably, in the nano silver wire alcohol mixeding liquid, the length of nano silver wire is 5~10 microns, a diameter of 60~
90 nanometers.
The effective hot pressing welding under method provided by the invention is beneficial to using the nano silver wire of features described above, ensures that silver is received
The quality of rice noodles grid electrode.
Preferably, the step S3 includes:Quantified using liquid-transfering gun by nano silver wire alcohol mixeding liquid drop coating on substrate,
Make the full whole substrate of nano silver wire alcohol mixeding liquid tiling, it is dry;Repeat 6~12 times, obtain nano silver wire grid.It is further excellent
Elect as and take 0.1 10 microlitres of drop coatings of mg/ml nano silver wire alcohol mixeding liquid on substrate using liquid-transfering gun, solution tiling is full whole
A substrate, treats solution natural evaporation, nano silver wire by own wt natural subsidence on substrate.
Preferably, repeating said steps S3, make the deposited concentration of nano silver wire grid on substrate for 60~120 milligrams/it is flat
Square rice.
Preferably, repeating said steps S3, the deposited concentration for making nano silver wire grid on substrate are 80 millis gram/m.
The nano silver wire grid of above-mentioned deposited concentration is beneficial to the high transmission for the nano silver wire grid electrode that guarantee is prepared
Rate and low areal resistance.
Preferably, further included after the step S3 before step S4 using unrestrained through method of testing test nano silver wire grid
Transmitance, also, using parallel four probe test method test nano silver wire grid surface resistance, so as to get silver nanoparticle gauze
The transmitance of lattice is more than 90%, and surface resistance is below 1000 ohms/square.
Nano silver wire grid prepared by step S3 is detected with reference to the above method, controls the nano silver wire grid of preparation
Quality, so as to be further ensured that the high transmittance and low areal resistance for the nano silver wire grid electrode being prepared.
Preferably, in the step S4, to nano silver wire grid hot pressing 10~30 minutes.
By the nano silver wire grid electrode that is prepared of method of the present invention, transmitance is under 550 nano wave lengths
91%, surface resistance is below 400 ohms/squares, photoelectric properties quality factor is 9.74 × 10-4More than ohm.The silver nanoparticle gauze
Lattice electrode excellent quality.Under optimal situation, the nano silver wire grid electrode under 550 nano wave lengths transmitance for 91% with
On, surface resistance is below 26 ohms/squares, photoelectric properties quality factor can reach 14.98 × 10-3ohm.(Haacke exists
Define within 1976 thin-film material quality factor (ΦTE) assess its photoelectric properties, i.e., using formula ΦTE=T10/ Rs, wherein T
For the transmitance of film, Rs is film surface resistance.)
Compared with prior art, the beneficial effects of the invention are as follows:
(1) as seen from the above technical solution provided by the invention, provided by the present invention kind of hot pressing welding silver nanoparticle
The preparation method preparation process of wire grid electrode is simple, is greatly reduced using simple aux. pressure between nano silver wire
The required temperature of mutual welding, good supporting condition is provided for the preparation of flexible device.
(2) the nano silver wire network for preparing of the present invention favourable prepares bar for compound provide of follow-up passivation layer
Part, passivation layer can be directly overlayed in nano silver wire network, and 100 DEG C of progress hot-pressing processings are heated under atmospheric environment, excellent
Change preparation process, can large-scale production.
Brief description of the drawings
Fig. 1 is that the unrestrained of the nano silver wire grid that embodiment 1 prepares different deposited concentrations passes through spectrogram;
Fig. 2 is the surface resistance variation diagram for the nano silver wire grid that embodiment 1 prepares different deposited concentrations;
Fig. 3 is nano silver wire grid electrode prepared by embodiment 2~6 and comparative example 1 after different weight hot-pressing processing
The variation diagram of surface resistance;
Fig. 4, which is that the nano silver wire grid electrode of the preparation of embodiment 6 is unrestrained after hot-pressing processing, passes through spectrogram;
Fig. 5 is nano silver wire grid electrode prepared by embodiment 2~6 and comparative example 1 after different weight hot-pressing processing
Scanning Electron microscope photograph;
Fig. 6 is the variation diagram of nano silver wire grid electrode resistance behind different time hot-pressing processing prepared by comparative example 2.
Fig. 7 be comparative example 2 prepare nano silver wire grid electrode after 40 minutes hot-pressing processings Scanning Electron microscope figure
Piece.
Embodiment
In order to which technical problem, technical solution and beneficial effect solved by the invention is more clearly understood, below in conjunction with
Accompanying drawings and embodiments, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Embodiment 1
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 4 times, 6 times, 8 times, 10 times and 12 times, deposition is respectively obtained
Concentration is 40 millis gram/m, 60 millis gram/m, 80 millis gram/m, 100 millis gram/m and 120 milligrams/square
The nano silver wire grid of rice, treats that solution is completely dried, characterizes its photoelectric characteristic, the main transmission for including test nano silver wire grid
Rate and surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, and the test of the surface resistance of nano silver wire grid is adopted
With parallel four probe test method, test result is as depicted in figs. 1 and 2.
Consider the photoelectric properties of the nano silver wire grid of different deposited concentrations, not only needed as transparency electrode relatively low
Surface resistance, its transmitance should try one's best and be maintained at more than 90%, so suggesting choosing (80 milligrams/flat of 60-100 millis gram/m
Square rice is optimal) the nano silver wire network of deposited concentration does subsequent treatment.The nano silver wire of 40 milli gram/m deposited concentrations
Grid surface too high in resistance and 120 milli gram/m nano silver wire grid transmitance it is too low.
Embodiment 2
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 2 kilograms of weight, hot pressing time 30 minutes.Nano silver wire after hot-pressing processing
Method employed in the same step of surface resistance test method (3) of grid electrode, test result is as shown in figure 3, silver nanoparticle gauze
Electron scanning micrograph of the lattice electrode under different application weight is as shown in Figure 5 b.
Embodiment 3
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 3 kilograms of weight, hot pressing time 30 minutes.Nano silver wire after hot-pressing processing
Method employed in the same step of surface resistance test method (3) of grid electrode, test result is as shown in figure 3, silver nanoparticle gauze
Electron scanning micrograph of the lattice electrode under different application weight is as shown in Figure 5 c.
Embodiment 4
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 5 kilograms of weight, hot pressing time 30 minutes.Nano silver wire after hot-pressing processing
Method employed in the same step of surface resistance test method (3) of grid electrode, test result is as shown in figure 3, silver nanoparticle gauze
Electron scanning micrograph of the lattice electrode under different application weight is as fig 5d.
Embodiment 5
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 9 kilograms of weight, hot pressing time 30 minutes.Start between nano silver wire grid
As-welded is formed, nano silver wire grid electrode surface resistance resistance value is greatly reduced, nano silver wire grid electrode after hot-pressing processing
Method employed in the same step of surface resistance test method (3), test result as shown in figure 3, nano silver wire grid electrode not
With the electron scanning micrograph applied under weight as depicted in fig. 5e.
Embodiment 6
The present embodiment is used for the preparation method for illustrating nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 14 kilograms of weight, hot pressing time 30 minutes.Between nano silver wire grid almost
Whole as-weldeds are formed, which reaches the effect to nano silver wire grid hot pressing welding, nano silver wire grid electrode
Surface resistance is also reduced to 26 ohms/squares, the surface resistance and transmission measurement method of nano silver wire grid electrode after hot-pressing processing
Method employed in same step (3), as shown in Figure 3 and Figure 4, nano silver wire grid electrode is in different application weight for test result
Under electron scanning micrograph as shown in figure 5f.
Comparative example 1
This comparative example is used for the preparation method of comparative illustration nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 0 kilogram of weight, hot pressing time 30 minutes.Nano silver wire after hot-pressing processing
Method employed in the same step of surface resistance test method (3) of grid electrode, test result is as shown in figure 3, its surface resistance surpasses
440 ohms/squares are crossed, surface resistance is excessive.Scanning electron microscope of the nano silver wire grid electrode under different application weight is shone
Piece is as shown in Figure 5 a, it can be seen that welding degree is very low between nano silver wire.
Comparative example 2
This comparative example is used for the preparation method of comparative illustration nano silver wire grid electrode disclosed by the invention.
(1) substrate is cleaned, is cleaned by ultrasonic respectively in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water, nitrogen drying.
(2) appropriate nano silver wire alcohol suspending liquid is taken, adds a certain amount of ethanol solution, by nano silver wire suspension
It is 0.1 mg/ml to be diluted to concentration.
(3) specific steps of nano silver wire network are prepared using drop coating film build method:1. according to substrate size, this
Using 1 square centimeter of quartz plate, taken using liquid-transfering gun and be diluted to 0.1 10 microlitres of drop coatings of mg/ml nano silver wire suspension
On substrate, the full whole substrate of solution tiling, treats solution natural evaporation, nano silver wire is by own wt natural subsidence in substrate
On.2. carrying out equivalent solution drop coating next time again, by this step cycle 8 times, deposited concentration is respectively obtained as 80 millis gram/m
Nano silver wire grid, treat that solution is completely dried, characterize its photoelectric characteristic, the main transmitance for including test nano silver wire grid
And surface resistance, the transmitance of nano silver wire grid pass through method of testing using unrestrained, the test of the surface resistance of nano silver wire grid uses
Parallel four probe test method, test result is as depicted in figs. 1 and 2.
(4) electric plate temperature is 100 DEG C, applies 14 kilograms of weight, hot pressing time 0~40 minute.Silver is received after hot-pressing processing
Method employed in the same step of surface resistance test method (3) of rice noodles grid electrode, test result are as shown in Figure 6.Applying
Under conditions of weight is 14 kilograms, after hot pressing 30 minutes, nano silver wire grid electrode surface resistance reaches minimum, works as hot pressing time
Reach 40 minutes, the surface resistance mutation of nano silver wire grid electrode, is obtained, long hot pressing by scanning electron microscope test
Time causes fusing phenomenon occur between nano silver wire, causes the surface resistance of nano silver wire grid electrode to increase suddenly, more than 10000 Europe
Nurse/square, surface resistance is excessive, and electron scanning micrograph is as shown in Figure 7.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of nano silver wire grid electrode, it is characterised in that comprise the following steps:
S1, cleaning substrate:Substrate is cleaned by ultrasonic in trichloro ethylene, acetone, absolute ethyl alcohol, deionized water respectively, nitrogen is blown
It is dry;
S2, prepare nano silver wire alcohol mixeding liquid;
S3, using nano silver wire alcohol mixeding liquid, nano silver wire grid is prepared by drop coating film build method on substrate, it is dry;
Polyfluortetraethylene plate, be placed on nano silver wire grid by S4, through polyfluortetraethylene plate to silver at the temperature below 100 DEG C
Nano wire grid consistent applies less than 14 kilograms of pressure, continues 5~35 minutes, makes nano silver wire grid welding, is formed
Nano silver wire grid electrode.
2. preparation method according to claim 1, it is characterised in that in the step S1, by substrate successively in three chloroethenes
It is cleaned by ultrasonic successively in alkene, acetone, absolute ethyl alcohol, deionized water 5 minutes, then nitrogen drying.
3. preparation method according to claim 1, it is characterised in that, will using ethanol solution in the step S2
Nano silver wire suspension dilutes, and obtains the nano silver wire alcohol mixeding liquid that concentration is 0.01~0.2 mg/ml.
4. preparation method according to claim 3, it is characterised in that the nano silver wire alcohol mixeding liquid includes silver nanoparticle
Line and absolute ethyl alcohol composition;In the nano silver wire alcohol mixeding liquid, the concentration of nano silver wire is 0.1 mg/ml.
5. preparation method according to claim 1, it is characterised in that the step S3 includes:Being quantified using liquid-transfering gun will
Nano silver wire alcohol mixeding liquid drop coating on substrate, makes the full whole substrate of nano silver wire alcohol mixeding liquid tiling, dry;
Repeat 6~12 times, obtain nano silver wire grid.
6. preparation method according to claim 5, it is characterised in that repeating said steps S3, makes nano silver wire on substrate
The deposited concentration of grid is 60~120 millis gram/m.
7. preparation method according to claim 6, it is characterised in that repeating said steps S3, makes nano silver wire on substrate
The deposited concentration of grid is 80 millis gram/m.
8. preparation method according to claim 1, it is characterised in that in the nano silver wire alcohol mixeding liquid, silver nanoparticle
The length of line is 5~10 microns, a diameter of 60~90 nanometers.
9. preparation method according to claim 5, it is characterised in that further include and adopt before step S4 after the step S3
With it is unrestrained through method of testing test nano silver wire grid transmitance, also, using parallel four probe test method test silver nanoparticle
The surface resistance of wire grid, so as to get the transmitance of nano silver wire grid is more than 90%, and surface resistance is 1000 ohms/squares
Below.
10. preparation method according to claim 1, it is characterised in that the nano silver wire grid electrode is in 550 nanometer waves
Long lower transmitance is more than 91%, and surface resistance is below 400 ohms/squares, photoelectric properties quality factor is 9.74 × 10-4ohm
More than.
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CN108517048A (en) * | 2018-04-28 | 2018-09-11 | 吉林建筑大学 | A kind of nano silver wire grid-redox graphene combination electrode and preparation method thereof |
CN108766627A (en) * | 2018-05-15 | 2018-11-06 | 华南理工大学 | A kind of silver nanoparticle mesh flexible transparent electrode and preparation method thereof |
CN110634621A (en) * | 2019-09-25 | 2019-12-31 | 天津大学 | Flexible transparent touch screen based on AgNWs and preparation method thereof |
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CN108517048A (en) * | 2018-04-28 | 2018-09-11 | 吉林建筑大学 | A kind of nano silver wire grid-redox graphene combination electrode and preparation method thereof |
CN108517048B (en) * | 2018-04-28 | 2020-12-25 | 吉林建筑大学 | Silver nanowire grid-reduced graphene oxide composite electrode and preparation method thereof |
CN108766627A (en) * | 2018-05-15 | 2018-11-06 | 华南理工大学 | A kind of silver nanoparticle mesh flexible transparent electrode and preparation method thereof |
CN110634621A (en) * | 2019-09-25 | 2019-12-31 | 天津大学 | Flexible transparent touch screen based on AgNWs and preparation method thereof |
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