CN107910297A - The manufacture method and back side illumination image sensor of back side illumination image sensor - Google Patents
The manufacture method and back side illumination image sensor of back side illumination image sensor Download PDFInfo
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- CN107910297A CN107910297A CN201711282559.8A CN201711282559A CN107910297A CN 107910297 A CN107910297 A CN 107910297A CN 201711282559 A CN201711282559 A CN 201711282559A CN 107910297 A CN107910297 A CN 107910297A
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- 238000005286 illumination Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000926 separation method Methods 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 238000001259 photo etching Methods 0.000 claims abstract description 33
- 239000007769 metal material Substances 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 8
- 230000009467 reduction Effects 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The present invention relates to the manufacture method and back side illumination image sensor of technical field of manufacturing semiconductors, more particularly to a kind of back side illumination image sensor.The manufacture method of the back side illumination image sensor, includes the following steps：One substrate is provided, and pixel region is defined and around the neighboring area of the pixel region in substrate surface using photoetching process；In the substrate surface deposited metal material, to form metal layer in the pixel region and form weld pad in the neighboring area；Photoetching treatment is carried out to the metal layer, to form the separation layer for including multiple openings in the pixel region.The present invention reduces the photoetching number of back side illumination image sensor, reduce back side illumination image sensor and be manufactured into and process complexity.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of manufacture method of back side illumination image sensor and
Back side illumination image sensor.
Background technology
So-called imaging sensor, refers to the device for converting optical signals to electric signal.It is different according to the principle of its foundation, can
To divide into CCD (Charge Coupled Device, charge coupled cell) imaging sensors and CMOS
(Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device) imaging sensor.Due to
Cmos image sensor is made of traditional cmos circuit technique, therefore can be by imaging sensor and its is required outer
Enclose circuit to be integrated, so that cmos image sensor has wider array of application prospect.
According to the difference for the position for receiving light, illuminated image sensor and back-illuminated before cmos image sensor can be divided into
Formula imaging sensor.Wherein, being exactly compared with preceding illuminated image sensor, in place of the optimization of back side illumination image sensor maximum will
Structural change inside element, i.e., turn direction by the element input path of photosensitive layer, and light can be entered from back side direct projection,
Avoiding in preceding illuminated image sensor, light can be influenced be subject to the structure between lens and photodiode and thickness,
Improve the efficiency of light receiver.
In existing back side illumination image sensor, after incident ray passes through colored filter, the light of Partial angle
Adjacent photosensitive area can be reached, so as to generate extra photosignal in the sensor devices in neighboring photosensitive area, i.e., there occurs
The crosstalk of light.The mutual crosstalk between light using metallic spacer, it is necessary to will transmit through different colours optical filter in order to prevent
Light be isolated from each other.But existing metallic spacer is in the production process, it is necessary to deposited metal tungsten and five light of progress
Cover technique, this not only result in the increase of manufacture back side illumination image sensor cost, but also add process complexity, reduce
Formation efficiency.
Therefore, the manufacture cost of backside-illuminated sensor how is reduced, simplifies process fabrication steps, formation efficiency is improved, is
A technical problem to be solved urgently.
The content of the invention
The present invention provides a kind of manufacture method and back side illumination image sensor of back side illumination image sensor, existing to solve
Some back side illumination image sensors manufacture the problem of of high cost, manufacturing process is complicated, to improve the life of back side illumination image sensor
Produce efficiency.
To solve the above-mentioned problems, the present invention provides a kind of manufacture method of back side illumination image sensor, including it is as follows
Step：
One substrate is provided, and pixel region is defined and around the pixel region in the substrate surface using photoetching process
The neighboring area in domain；
In the substrate surface deposited metal material, to form metal layer and in the peripheral region in the pixel region
Domain forms weld pad；
Photoetching treatment is carried out to the metal layer, to form the separation layer for including multiple openings in the pixel region.
Preferably, to the metal layer carry out photoetching treatment, with the pixel region formed include multiple openings every
The specific steps of absciss layer include：
In the metal layer and weld pad surface depositing insulating layer；
Photoetching treatment is carried out to the metal layer and the insulating layer for being covered in the layer on surface of metal, with the pixel
Region forms the separation layer for including multiple openings.
Preferably, the substrate includes silicon base and is covered in the silica dioxide medium layer of the silicon substrate surface, adopts
With photoetching process pixel region and the specific steps around the neighboring area of the pixel region are defined in the substrate surface
Including：
Reduction processing is carried out using the photoetching process pair silica dioxide medium layer corresponding with pixel region.
Preferably, the residual thickness of the silica dioxide medium layer through reduction processing is
Preferably, include in the specific steps of the substrate surface deposited metal material：
It is in the basal surface deposit thicknessMetal material.
Preferably, pixel region and the week around the pixel region are defined in the substrate surface using photoetching process
Following steps are further included before border region：
Silicon hole is formed in the substrate so that the silicon hole is corresponding with neighboring area.
Preferably, to the metal layer and be covered in the layer on surface of metal insulating layer carry out photoetching treatment, with
The pixel region further includes following steps after forming the separation layer for including multiple openings：
In the surface of insulating layer deposit passivation layer；
Pair corresponding with the neighboring area insulating layer and passivation layer carry out photoetching treatment, with the exposure weld pad.
Preferably, the metal material is aluminium.
To solve the above-mentioned problems, present invention also offers a kind of back side illumination image sensor, including substrate, the substrate
Including pixel region and around the neighboring area of the pixel region, the neighboring area is provided with weld pad, the pixel region
Domain is provided with the separation layer for including multiple openings, and the weld pad and the separation layer are in the substrate surface by metal material
Primary depositing during at the same time formed.
Preferably, the metal material is aluminium.
The manufacture method and back side illumination image sensor of back side illumination image sensor provided by the invention, weld pad and separation layer
Formed using identical material manufacture, and formed at the same time in a metal deposition process, reduce back side illumination image sensing
The photoetching number of device, reduces back side illumination image sensor and is manufactured into and process complexity, improve back side illumination image sensor
Production efficiency.
Brief description of the drawings
Attached drawing 1 is the FB(flow block) of the manufacture method of back side illumination image sensor in the first embodiment of the invention；
Attached drawing 2A-2E is the main work of the manufacture method of back side illumination image sensor in the first embodiment of the invention
Skill schematic diagram；
Attached drawing 3 is the structure diagram of back side illumination image sensor in the second embodiment of the invention.
Embodiment
Manufacture method to back side illumination image sensor provided by the invention and back side illumination image sensing below in conjunction with the accompanying drawings
The embodiment of device elaborates.
First embodiment
Present embodiment provides a kind of manufacture method of back side illumination image sensor, and attached drawing 1 is the present invention first
The FB(flow block) of the manufacture method of back side illumination image sensor in embodiment, attached drawing 2A-2E are that the present invention first is specific
The main technique schematic diagram of the manufacture method of back side illumination image sensor in embodiment.As shown in Fig. 1,2A-2E, this is specific real
The manufacture method for the back side illumination image sensor that the mode of applying provides, includes the following steps：
Step S11, there is provided a substrate, and define pixel region AA using photoetching process in the substrate surface and surround
The neighboring area AB of the pixel region AA.Wherein, the pixel region AA is used for light by show image；The periphery
Region AB is set around the pixel region, to define the border of the pixel region AA and arrange connection circuit.Preferably, such as
Shown in Fig. 2A, the substrate includes silicon base 21 and the silica dioxide medium layer 22 for being covered in 21 surface of silicon base.It is excellent
Choosing, define pixel region AA in the substrate surface and further included before the neighboring area AB of the pixel region AA
Following steps：Silicon hole (Through Silicon Via, TSV) 23 is formed in the substrate so that the silicon hole 23 with
The neighboring area AB is corresponded to.Easy to set wiring in the silicon hole 23 afterwards, and the pixel region AA is not influenced
Aperture opening ratio.
Specifically, pixel region AA is defined and around the pixel region in the substrate surface using photoetching process
The specific steps of the neighboring area AB of AA include：Using the photoetching process pair silica corresponding with the pixel region AA
Dielectric layer 22 carries out reduction processing, and the structure of the obtained substrate is as shown in Figure 2 B.Pair corresponding with the pixel region AA
The silica dioxide medium layer 22 carry out reduction processing during, it is necessary to control in pixel region AA remaining silica to be situated between
The thickness of matter layer 22, this is because：If the thickness of residue silica dioxide medium layer 22 corresponding with the pixel region AA is too thin,
The separation layer being subsequently formed can be polluted be subject to metal ion in optical filter, influence light isolation effect；If with the pixel region
The thickness of the corresponding remaining silica dioxide medium layers 22 of domain AA is too thick, then light cannot be separated well, can produce light
The problem of line crosstalk.It is corresponding with the pixel region AA and through reduction processing it is preferred, therefore, that in this embodiment
The residual thickness of silica dioxide medium layer afterwards is
Step S12, in the substrate surface deposited metal material 24, with the pixel region AA formed metal layer 241,
And weld pad 242 is formed in the neighboring area AB, obtained structure is as shown in Figure 2 C.In this step, by the pixel region
The domain AA and neighboring area AB deposits same metal material at the same time, is not only formd in the neighboring area AB for carrying out electricity
The weld pad 242 of road connection, but also the metal layer 241 for being subsequently used for manufacture separation layer is formd in the pixel region AA.Phase
Compared with two single metal depositing operations are used in the prior art to deposit two kinds of different metal materials, form weld pad and gold respectively
The technology for belonging to layer is compared, and metal layer 241 described in present embodiment uses same metal material structure with the weld pad 242
Into and the step of deposit in same step depositing operation, not only reduce deposition, photoetching, and using the metal as weld pad
Material manufactures follow-up separation layer, it is not necessary to increases extra metal species, reduces the manufacture of back side illumination image sensor
Cost.Wherein, the species of the metal material 24, those skilled in the art can make choice according to actual needs.Deposition
The thickness of metal material 24 should meet the requirement of circuit bonding during encapsulation to prevent routing from failing, and meet that follow-up filling is color again
The depth requirements of colo(u)r filter to avoid influence light absorptivity, it is preferred that in the substrate surface deposited metal material 24
Specific steps include：It is in the substrate surface deposit thicknessMetal material.It is in order to enable described
Metal material both has preferable electric conductivity, but also with preferable shading performance, it is preferred that the metal material 24 is aluminium.
Step S13, photoetching treatment is carried out to the metal layer 241, includes multiple open to be formed in the pixel region AA
The separation layer 26 of mouth 27, to obtain structure as shown in Figure 2 E.Specifically, be pointed to the metal layer of the pixel region AA into
Row photoetching treatment, to form the separation layer 26 of fenestral fabric.Opening 27 in the separation layer 26 is used to place colorized optical filtering
Piece.Adjacent color optical filter is separated by the separation layer 26, to avoid the crosstalk of light.
In order to be protected to the metal layer and the weld pad, it is preferred that the metal layer 241 is carried out at photoetching
Reason, is included with forming the specific steps for the separation layer 26 for including multiple openings 27 in the pixel region AA：
(S13-1) in the metal layer 241 and the 242 surface depositing insulating layer 25 of weld pad, as shown in Figure 2 D；
(S13-2) to the metal layer 241 and be covered in 241 surface of metal layer insulating layer 25 carry out photoetching at
Reason, to form the separation layer 26 for including multiple openings 27 in the pixel region AA.Wherein, the specific material of the insulating layer 25
Matter, can be but not limited to silica, and those skilled in the art can make choice according to actual needs.
For the ease of encapsulation, it is preferred that pair corresponding with the pixel region AA metal layer 241 and insulating layer 25 carry out light
Quarter is handled, and following steps are further included after the separation layer 26 for including multiple openings 27 to be formed：
1) in the 25 surface deposit passivation layer of insulating layer, to be protected to the separation layer 26, the isolation is prevented
Layer 26 is disturbed be subject to subsequent step；
2) photoetching treatment is carried out for the corresponding insulating layers 25 of the neighboring area AB and passivation layer, with the exposure weldering
Pad, is connected easy to the weld pad with circuit lead, to realize the transmission of subsequent electrical signal.
The manufacture method for the back side illumination image sensor that present embodiment provides, weld pad is with separation layer using identical
Material manufacture forms, and is formed at the same time in a metal deposition process, reduces the photoetching time of back side illumination image sensor
Number, reduces back side illumination image sensor and is manufactured into and process complexity, improves the production efficiency of back side illumination image sensor.
Second embodiment
Present embodiment provides a kind of back side illumination image sensor, and attached drawing 3 is the second specific embodiment party of the invention
The structure diagram of back side illumination image sensor in formula.As shown in figure 3, the back side illumination image sensing that present embodiment provides
Device, including substrate, the substrate include the pixel region AA and neighboring area AB around the pixel region AA, the periphery
Region AB is provided with weld pad 38, and the pixel region AA is provided with the separation layer 36 for including multiple openings 37, the weld pad 38 with
The separation layer 36 be by metal material during the primary depositing of the substrate surface and meanwhile formed.
In order to enable the metal material both has preferable electric conductivity, but also with preferable shading performance, it is preferred that
The metal material is aluminium.
Preferably, as shown in figure 3, the substrate includes silicon base 31 and is covered in the two of 31 surface of silicon base
Silicon oxide dielectric layer 32, and silicon hole (Through Silicon Via, TSV) 33 is formed in the substrate so that the silicon
Through hole 33 is corresponding with the neighboring area AB.Easy to set wiring in the silicon hole 33 afterwards, and the picture is not influenced
The aperture opening ratio of plain region AA.
In order to avoid the separation layer 36 is polluted be subject to metal ion in optical filter, light isolation effect is influenced, and make
Obtain the separation layer 36 to can be good at separating light, avoid the problem that producing light crosstalk, it is preferred that specific at this
In embodiment, the thickness of silica dioxide medium layer 32 corresponding with the pixel region AA is
The requirement of circuit bonding is to prevent routing from failing during in order to not only meet encapsulation, but also meets follow-up filling color optical filter
Depth requirements to avoid influencing the absorptivity of light, it is preferred that be in the thickness of metal material of substrate surface deposition
In order to be protected to the separation layer 36 and the weld pad 38, it is preferred that the separation layer 36 and the weld pad
38 surfaces are covered with insulating layer 35.Wherein, the specific material of the insulating layer 35, can be but not limited to silica, ability
Field technique personnel can make choice according to actual needs.
In order to be protected to latticed separation layer 36, the separation layer 36 is avoided in the back side illumination image sensor
Manufacturing process in disturbed be subject to subsequent step, it is preferred that it is described insulation 35 surface be also covered with passivation layer.More preferably
, the neighboring area AB is provided with connecting hole, the connecting hole is through the insulating layer 35 and the passivation layer, with exposure
The weld pad 38, is connected easy to the weld pad 38 in encapsulation process with circuit lead, to realize the transmission of electric signal.
The back side illumination image sensor that present embodiment provides, weld pad and separation layer use identical material manufacture and
Into, and formed at the same time in a metal deposition process, reduce the photoetching number of back side illumination image sensor, reduce the back of the body
Illuminated image sensor is manufactured into and process complexity, improves the production efficiency of back side illumination image sensor.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of manufacture method of back side illumination image sensor, it is characterised in that include the following steps：
One substrate is provided, and pixel region is defined and around the pixel region in the substrate surface using photoetching process
Neighboring area；
In the substrate surface deposited metal material, to form metal layer and in the neighboring area shape in the pixel region
Into weld pad；
Photoetching treatment is carried out to the metal layer, to form the separation layer for including multiple openings in the pixel region.
2. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that to the metal layer into
Row photoetching treatment, is included with forming the specific steps for the separation layer for including multiple openings in the pixel region：
In the metal layer and weld pad surface depositing insulating layer；
Photoetching treatment is carried out to the metal layer and the insulating layer for being covered in the layer on surface of metal, with the pixel region
Being formed includes the separation layer of multiple openings.
3. the manufacture method of back side illumination image sensor according to claim 2, it is characterised in that the substrate includes silicon
Substrate and the silica dioxide medium layer for being covered in the silicon substrate surface, are defined using photoetching process in the substrate surface
Pixel region and specific steps around the neighboring area of the pixel region include：
Reduction processing is carried out using the photoetching process pair silica dioxide medium layer corresponding with pixel region.
4. the manufacture method of back side illumination image sensor according to claim 3, it is characterised in that two through reduction processing
The residual thickness of silicon oxide dielectric layer is
5. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that in the substrate surface
The specific steps of deposited metal material include：
It is in the basal surface deposit thicknessMetal material.
6. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that existed using photoetching process
The substrate surface defines pixel region and further includes following steps before the neighboring area of the pixel region：
Silicon hole is formed in the substrate so that the silicon hole is corresponding with neighboring area.
7. the manufacture method of back side illumination image sensor according to claim 2, it is characterised in that to the metal layer with
And the insulating layer progress photoetching treatment of the layer on surface of metal is covered in, include multiple openings to be formed in the pixel region
Following steps are further included after separation layer：
In the surface of insulating layer deposit passivation layer；
Pair corresponding with the neighboring area insulating layer and passivation layer carry out photoetching treatment, with the exposure weld pad.
8. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that the metal material is
Aluminium.
9. a kind of back side illumination image sensor, including substrate, the substrate includes pixel region and around the pixel region
Neighboring area, the neighboring area is provided with weld pad, and the pixel region is provided with the separation layer for including multiple openings, it is special
Sign is, the weld pad and the separation layer be by metal material during the primary depositing of the substrate surface shape at the same time
Into.
10. back side illumination image sensor according to claim 9, it is characterised in that the metal material is aluminium.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115579374A (en) * | 2022-12-12 | 2023-01-06 | 合肥新晶集成电路有限公司 | Method for manufacturing back cover type image sensor and back cover type image sensor |
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| CN103985725A (en) * | 2014-06-03 | 2014-08-13 | 豪威科技(上海)有限公司 | Semiconductor structure and manufacturing method thereof |
| CN107195644A (en) * | 2016-03-15 | 2017-09-22 | 豪威科技股份有限公司 | Bias deep trench isolation |
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