CN107903049B - Microwave dielectric material with ultralow dielectric constant - Google Patents
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- CN107903049B CN107903049B CN201711122888.6A CN201711122888A CN107903049B CN 107903049 B CN107903049 B CN 107903049B CN 201711122888 A CN201711122888 A CN 201711122888A CN 107903049 B CN107903049 B CN 107903049B
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- 239000003989 dielectric material Substances 0.000 title claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910002971 CaTiO3 Inorganic materials 0.000 claims abstract description 6
- 229910002370 SrTiO3 Inorganic materials 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000004891 communication Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses an ultra-low dielectric constant microwave dielectric material, the expression of which is (1-y) [ (1-x) SiO2‑xB2O3]‑yTiO2、(1‑y)[(1‑x)SiO2‑xB2O3]‑yCaTiO3Or (1-y) [ (1-x) SiO2‑xB2O3]‑ySrTiO3X is more than or equal to 0.2 and less than or equal to 0.4, and y is more than or equal to 0.02 and less than or equal to 0.1. The microwave dielectric material of the invention is made of amorphous phase (1-x) SiO2‑xB2O3And crystalline phase TiO2、CaTiO3Or SrTiO3No chemical reaction exists between the amorphous phase and the crystalline phase. The microwave dielectric material has an ultra-low dielectric constant (3.9-5.0), a high Qf value (40,000-70,000 GHz) and a near-zero resonant frequency temperature coefficient (-5 ppm/DEG C). The microwave dielectric material provided by the invention can be used for a microwave substrate, the ultralow dielectric constant of the microwave dielectric material can effectively reduce the signal delay of microwaves in the substrate during transmission, the high Qf value can reduce the energy loss during signal transmission, and the near-zero resonant frequency temperature coefficient can maintain the excellent temperature stability of a microwave circuit, thereby meeting the higher requirements of high-end microwave communication technology on the microwave substrate material.
Description
Technical Field
The invention relates to a microwave dielectric material applied to a communication system, in particular to a microwave dielectric material with an ultralow dielectric constant.
Background
The low dielectric constant microwave dielectric material is widely applied to microwave substrates, is one of key materials in the field of microwave communication, and has the following basic performance requirements: dielectric constant as low as possiblerTo reduce signal delay when microwave is transmitted in the substrate, to have Qf value as high as possible to reduce energy loss during signal transmission, and to have near-zero temperature coefficient of resonance frequency taufTo maintain the temperature stability of the microwave circuit. However, the above three performance indicators are generally mutually restrictive and have low performancerHigh Qf value and near zero τfVery few of them are known. WhileOn the other hand, the trend of microwave communication towards higher frequency puts higher and higher requirements on the comprehensive performance of the substrate material, and the development is ultra-lowr(<5) High Qf value (>40,000GHz) and near zero τfThe microwave substrate material has important significance for the development of high-end microwave communication technology.
Disclosure of Invention
The invention aims to provide an ultralow dielectric constant microwave dielectric material with high Qf value and near-zero resonant frequency temperature coefficient.
The expression of the microwave dielectric material with ultralow dielectric constant is (1-y) [ (1-x) SiO2-xB2O3]-yTiO2、(1-y)[(1-x)SiO2-xB2O3]-yCaTiO3Or (1-y) [ (1-x) SiO2-xB2O3]-ySrTiO3. Wherein x is more than or equal to 0.2 and less than or equal to 0.4, and y is more than or equal to 0.02 and less than or equal to 0.1. The microwave dielectric material of the invention is made of amorphous phase (1-x) SiO2-xB2O3And crystalline phase TiO2、CaTiO3Or SrTiO3The composition is that no chemical reaction (in the expression, (1-x), x refers to (1-x) SiO) exists between the amorphous phase and the crystalline phase2-xB2O3SiO in (2)2、B2O3Molar ratio, (1-y), y refers to the molar ratio of amorphous phase to crystalline phase in the material).
The microwave dielectric material with ultralow dielectric constant can be prepared by the following method.
First, SiO with a purity of 99.9% or more is mixed2、B2O3、TiO2、CaTiO3、SrTiO3And mixing the materials for 24 hours by a wet ball milling method according to the proportion, drying, adding a binder into the mixed powder, granulating, forming by uniaxial pressure, preparing a blank with the diameter of 12mm and the thickness of 6mm under the pressure of 100MPa, and sintering for 3 hours at 950-1050 ℃ in atmospheric atmosphere to obtain the required microwave dielectric material.
The binder can be a polyvinyl alcohol solution with the concentration of 3-8%, and the dosage of the binder is 5-10% of the weight of the powder.
The microwave dielectric material with the ultralow dielectric constant has the dielectric constant of 3.9-5.0, the Qf value of 40,000-70,000 GHz and the temperature coefficient of resonance frequency of-5 ppm/DEG C. The microwave dielectric material with the ultralow dielectric constant provided by the invention is used for the microwave substrate, so that the signal delay and energy loss of microwaves in the substrate transmission process can be obviously reduced, and the temperature stability of a microwave circuit is enhanced, thereby meeting the higher requirements of high-end microwave communication technology on the microwave substrate material. Therefore, the invention has great application value in industry.
Detailed Description
Tables 1 to 3 show several specific examples of the contents of the respective components constituting the present invention and their microwave dielectric properties. The preparation method is as described above. The sintered sample was subjected to phase analysis by powder X-ray diffraction method, and the microwave dielectric property at 15GHz was measured by dielectric resonance method.
TABLE 1 (1-y) [ (1-x) SiO2-xB2O3]-yTiO2The microwave dielectric property of (2).
TABLE 2 (1-y) [ (1-x) SiO2-xB2O3]-yCaTiO3The microwave dielectric property of (2).
TABLE 3 (1-y) [ (1-x) SiO2-xB2O3]-ySrTiO3The microwave dielectric property of (2).
As shown in tables 1 to 3, (1-y) [ (1)-x)SiO2-xB2O3]-yTiO2、(1-y)[(1-x)SiO2-xB2O3]-yCaTiO3And (1-y) [ (1-x) SiO2-xB2O3]-ySrTiO3Of three materialsrBoth decrease with increasing x and increase with increasing y; tau isfIs insensitive to the change of x and rises with the increase of y; the Qf value is maximized when x is 0.3 and increases with increasing y. Compared with the three materials, the crystal phase is SrTiO3Time of flightrAnd Qf are all highest and CaTiO3Is TiO at the middle2The lowest. The powder X-ray diffraction results show that the materials in tables 1-3 are all (1-X) SiO2-xB2O3Amorphous phase and TiO2、CaTiO3Or SrTiO3The crystal phase composition, and no chemical reaction exists between the amorphous phase and the crystal phase. When the composition is deviated from the above composition range, a crystalline phase such as cristobalite appears, and the microwave dielectric property is rapidly deteriorated, so that the avoidance of the reaction between the amorphous phase and the crystalline phase is the key point for obtaining excellent comprehensive properties in the present invention. Each of the components listed in tables 1-3 has a very low dielectric constant, a high Qf value and a near-zero temperature coefficient of resonance. Therefore, the composition range of the invention is defined as follows: x is more than or equal to 0.2 and less than or equal to 0.4, and y is more than or equal to 0.02 and less than or equal to 0.1.
Claims (1)
1. The microwave dielectric material with ultralow dielectric constant is characterized in that: the expression is (1-y) [ (1-x) SiO2-xB2O3]-yTiO2、(1-y)[(1-x)SiO2-xB2O3]-yCaTiO3Or (1-y) [ (1-x) SiO2-xB2O3]-ySrTiO3Wherein x is more than or equal to 0.2 and less than or equal to 0.4, and y is more than or equal to 0.02 and less than or equal to 0.1; from amorphous (1-x) SiO2-xB2O3And crystalline phase TiO2、CaTiO3Or SrTiO3No chemical reaction exists between the amorphous phase and the crystalline phase.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153748A (en) * | 1995-09-22 | 1997-07-09 | 株式会社村田制作所 | Glass composition having low dielectric constant for high-frequency circuits |
| US6309993B1 (en) * | 1999-04-28 | 2001-10-30 | National Science Council Of Republic Of China | Low-fire microwave dielectric compositions |
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2017
- 2017-11-14 CN CN201711122888.6A patent/CN107903049B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153748A (en) * | 1995-09-22 | 1997-07-09 | 株式会社村田制作所 | Glass composition having low dielectric constant for high-frequency circuits |
| US6309993B1 (en) * | 1999-04-28 | 2001-10-30 | National Science Council Of Republic Of China | Low-fire microwave dielectric compositions |
Non-Patent Citations (3)
| Title |
|---|
| B2O3改性SiO2微波介质材料;刘慧聪;《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》;20151215;59 * |
| Microwave dielectric properties of (1-x)SiO2-xTiO2 composite ceramics derived form core-shell structured microspheres;Chengxi Hu 等;《Materials Research Bulletin》;20140206;56 * |
| ZnO-B2O3-SiO2陶瓷介電特性之研究及其在微波元件之應用;王振盛;《國立成功大學 博碩士論文》;20090506;1 * |
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