CN107896093A - A kind of low-noise low-power consumption high-gain frequency mixer - Google Patents
A kind of low-noise low-power consumption high-gain frequency mixer Download PDFInfo
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- CN107896093A CN107896093A CN201710919264.0A CN201710919264A CN107896093A CN 107896093 A CN107896093 A CN 107896093A CN 201710919264 A CN201710919264 A CN 201710919264A CN 107896093 A CN107896093 A CN 107896093A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
Abstract
The present invention relates to a kind of low-noise low-power consumption high-gain frequency mixer, and Kilbert unit is balanced using Orthogonal Double, using the local oscillation signal of two kinds of different frequencies, including：Input transconductance cell, first switch unit, second switch unit, electric current injection unit and load unit.Wherein, first switch unit is modulated to the current radio frequency signal of input transconductance cell output by electric current commutation；Second switch unit is commutated by electric current to the current radio frequency signal that first switch unit exports and carries out secondary modulation, second local oscillation signal LO2 frequencies are twice of the first local oscillation signal LO1, the two phase difference is 45 °, first switch unit and second switch unit do not have DC current to flow through when carrying out state switching in transistor；The radio-frequency current that electric current injection unit exports to mutual conductance input block extracts, to improve circuit equivalent mutual conductance, improve circuit gain；Difference intermediate frequency output voltage signal exports between second switch unit and load unit.
Description
Technical field
The invention belongs to IC design technical field, be related to a kind of low noise, low-power consumption, high-conversion-gain it is lower mixed
Frequency device.
Background technology
With the continuous development of wireless communication technology, from the Military Application headed by Radar Technology, to using mobile communication as
Main civilian technology, increasing wireless communications application enter people at the moment.In Modern Communication System, before radio-frequency receiving-transmitting
End has the function that to hold the balance, and frequency mixer more has far-reaching as one of nucleus module therein to systematic function, cost
Influence.
In practical communication, for input signal on having image signal at the symmetrical frequency band of local oscillation signal, the signal will be tight
Ghost image rings the performance of receiving front-end, and the system of even resulting in can not normal work.Piece generally is needed to use to filtering out for image signal
Outer image-reject filter, this greatly reduces the integrated level of chip, improves design cost.Since generation nineteen ninety, people
With regard to constantly being explored to the zero-if architecture with mirror image inhibitory action.In zero intermediate frequency receiver rf front-end, local oscillation signal
Frequency is identical with radio-frequency input signals frequency, and useful signal is directly down converted to base band.Since so, the image signal of system
As useful signal in itself, therefore using orthogonal signalling zero intermediate frequency reciver in image signal is not present the problem of, apply
Prospect is very tempting.But because input signal is transferred directly to fundamental frequency by it, the low-frequency noise in circuit will be believed with intermediate frequency
Number export simultaneously, this noiseproof feature to mixer proposes very high requirement.Therefore, exploitation has in the zero of low noise
Frequency mixer tool is of great significance.
Generally, the Main Noise Sources of down-converter circuit include：The thermal noise, white of the flicker noise of transistor, each device
Noise etc., wherein flicker noise influence maximum.The circuit structure of traditional reduction flicker noise is based primarily upon to switching to direct current
The extraction of electric current, the amplitude of noise pulse is reduced, so as to suppress noise.Three kinds of structures can be substantially divided into：Quiescent current injection,
Dynamic current injects and uses resonance inductor structure.Wherein quiescent current injecting structure, while realizing that flicker noise suppresses
Conversion gain is reduced, increased diverter branch introduces white noise again in addition, therefore generally improvement is extremely limited.Dynamically
Current injection structures do not influence conversion gain, do not introduce new differential mode noise, but need larger local oscillation signal amplitude to ensure
Electric current ascending pipe works asynchronously with switching tube, very difficult implementing.Though resonance inductor structure does not influence conversion gain, gone back
Energy switch tube source electrode parasitic capacitance plays compensating action, but can introduce new noise, expend more circuit areas.
The content of the invention
The purpose of the present invention is on the premise of system low-power consumption is kept, and design one kind has good noise performance, especially
It is low flash noise, while there is the down-conversion mixer of high conversion gain.Technical scheme is as follows：
A kind of low-noise low-power consumption high-gain frequency mixer, Kilbert unit is balanced using Orthogonal Double, uses two kinds of differences
The local oscillation signal of frequency, including：Input transconductance cell, first switch unit, second switch unit, electric current injection unit and load
Unit, wherein,
Input transconductance cell realizes the conversion of radio frequency voltage signal and current radio frequency signal；
First switch unit is modulated to the current radio frequency signal of input transconductance cell output by electric current commutation；
Second switch unit is commutated by electric current to the current radio frequency signal that first switch unit exports and carries out secondary modulation,
Second local oscillation signal LO2 frequencies are twice of the first local oscillation signal LO1, and the two phase difference is 45 °, first switch unit and second
Switch element does not have DC current to flow through, so as to realize the elimination of low-frequency flicker noise when carrying out state switching in transistor；
The radio-frequency current that electric current injection unit exports to mutual conductance input block extracts, and improves circuit equivalent mutual conductance, carries
High circuit gain；
Load unit by using PMOS cross-coupled pair as output loading, believe by the electric current that second switch unit is exported
Number be converted to voltage signal；
Difference intermediate frequency output voltage signal exports between second switch unit and load unit.
Preferably, frequency mixer according to claim 1, it is characterised in that the input transconductance cell includes：First
It is brilliant
Body pipe (M1) and second transistor (M2)；
Wherein, the source electrode of the first transistor (M1) is connected to ground, and grid is connected with radio-frequency signal source, drain electrode and the 3rd
The source electrode of the source electrode of transistor (M3) and the 4th transistor (M4) connects；The source electrode of the second transistor (M2) is connected to ground,
Grid is connected with radio-frequency signal source, and drain electrode is connected with the source electrode of the 5th transistor (M5) and the source electrode of the 6th transistor (M6).
First switch unit includes：Third transistor (M3), the 4th transistor (M4), the 5th transistor (M5) and
Six transistors (M6)；
Wherein, the grid of the third transistor (M3) is connected with positive first local oscillation signal (LO1+), drain electrode and the 7th
The source electrode of the source electrode of transistor (M7) and the 8th transistor (M8) is connected, and source electrode is connected with the drain electrode of the first transistor (M1)；Institute
The grid for stating the 4th transistor (M4) is connected with reverse first local oscillation signal (LO1-), drain electrode and the 11st transistor (M11)
The source electrode of source electrode and the tenth two-transistor (M12) is connected, and source electrode is connected with the drain electrode of the first transistor (M1)；5th crystal
The grid for managing (M5) is connected with positive first local oscillation signal (LO1+), drain electrode and the source electrode and the tenth crystal of the 9th transistor (M9)
The source electrode connection of (M10) is managed, source electrode is connected with the drain electrode of second transistor (M2)；The grid of 6th transistor (M6) with it is anti-
Connected to the first local oscillation signal (LO1-), drain electrode and the source electrode of the 13rd transistor (M13) and the source of the 14th transistor (M14)
Pole is connected, and source electrode is connected with the drain electrode of second transistor (M2).
Second switch unit includes：7th transistor (M7), the 8th transistor (M8), the 9th transistor (M9), the tenth crystalline substance
Body pipe (M10), the 11st transistor (M11), the tenth two-transistor (M12), the 13rd transistor (M13) and the 14th transistor
(M14)；Wherein, the grid of the 7th transistor (M7) is connected with reverse second local oscillation signal I (LO2-I-), drain electrode and load
The left connection of network, source electrode are connected with the drain electrode of third transistor (M3)；The grid of 8th transistor (M8) and forward direction second
Local oscillation signal I (LO2-I+) connections, drain electrode and the right connection of laod network, source electrode are connected with the drain electrode of third transistor (M3)；Institute
The grid for stating the 9th transistor (M9) is connected with the second local oscillation signal I (LO2-I+) of forward direction, drain electrode and the left connection of laod network, source
Pole is connected with the drain electrode of the 5th transistor (M5)；The grid of tenth transistor (M10) and reverse second local oscillation signal I
(LO2-I-) connect, drain electrode and the right connection of laod network, source electrode are connected with the drain electrode of the 5th transistor (M5)；Described 11st is brilliant
The grid of body pipe (M11) is connected with reverse second local oscillation signal I (LO2-I-), drain electrode and the left connection of laod network, source electrode and the
The drain electrode connection of four transistors (M4)；The grid of tenth two-transistor (M12) and the second local oscillation signal I (LO2-I+) of forward direction
Connection, drain electrode and the right connection of laod network, source electrode are connected with the drain electrode of the 4th transistor (M4)；13rd transistor
(M13) grid is connected with the second local oscillation signal I (LO2-I+) of forward direction, drain electrode and the left connection of laod network, source electrode and the 6th crystalline substance
The drain electrode connection of body pipe (M6)；The grid of 14th transistor (M14) connects with reverse second local oscillation signal I (LO2-I-)
Connect, drain electrode and the right connection of laod network, source electrode are connected with the drain electrode of the 6th transistor (M6).
Electric current injection unit includes：15th transistor (M15), the 16th transistor (M16) and the first electric capacity (C1),
One inductance (L1).Wherein, the source electrode of the 15th transistor (M15) is connected with power supply, grid and drain electrode be connected with each other and with
Current source connects；16th transistor (M16) source electrode is connected with power supply, and grid is connected with the grid of the 15th transistor,
Drain electrode is connected with the first electric capacity (C1) and the first inductance (L1).
The load unit includes：17th transistor (M17) and second resistance (R2), the second electric capacity (C2)；Wherein, institute
The 17th transistor (M17) source electrode is stated to be connected with power supply, grid and drain electrode be connected with each other and with the drain electrode of the 7th transistor (M7)
Connection；Second resistance (R2) first end is connected with power supply, and the second end is connected with the drain electrode of the 7th transistor (M7)；Described
Two electric capacity (C2) first end is connected with power supply, and the second end is connected with the drain electrode of the 7th transistor (M7).
15th transistor (M15), the 16th transistor (M16), the 17th source electrode and second resistance (R2),
The first end of two electric capacity (C2) is connected with power vd D；The first transistor (M1), the source electrode of second transistor (M2) and
One electric capacity (C1) is connected with ground terminal GND.
15th transistor (M15), the 16th transistor (M16) and the 17th transistor (M17) are PMOS crystalline substances
Body pipe, remaining is nmos pass transistor.
Advantages of the present invention has：
1. there is excellent noiseproof feature, it is particularly preferable to the inhibition of low-frequency flicker noise；
2. circuit can work at lower supply voltages, there is relatively low power consumption；
3. there is higher conversion gain.
Due to possessing above feature, the structure is suitable as down-conversion mixer and is used for zero intermediate frequency or Low Medium Frequency receiver rf front-end
In, it is particularly suitable for application in the narrow-band communication system higher to noise objective requirement.
Brief description of the drawings
Fig. 1 has the Orthogonal Double balance down-conversion mixer circuit diagram of low flash noise
Fig. 2 frequency mixer main signal working waveform figures
Fig. 3 has the quiescent current injecting structure circuit diagram that white noise eliminates
Fig. 4 has the RC/PMOS laod network structural circuit figures of low-frequency filter characteristicses
Embodiment
The present invention is based on orthogonal double balanced gilbert cell, using double local oscillation signals, quiescent current injecting structure, low pass
Special type laod network is filtered, it is electric to devise a kind of new down-conversion mixer with good noise performance, low-power consumption, high-conversion-gain
Road.Below in conjunction with the accompanying drawings, the embodiment of the present invention is illustrated.
The source ground of the first transistor (M1), grid connect radiofrequency signal, drain electrode connect third transistor (M3) source electrode and
The source electrode of 4th transistor (M4)；The source ground of second transistor (M2), grid connect radiofrequency signal, and drain electrode connects the 5th transistor
(M5) source electrode and the source electrode of the 6th transistor (M6)；The grid of third transistor (M3) meets the first local oscillation signal (LO1 of forward direction
+), drain electrode connects the source electrode of the 7th transistor (M7) and the source electrode of the 8th transistor (M8)；The grid of 4th transistor (M4) is reversed
To the first local oscillation signal (LO1-), drain electrode connects the source electrode of the 11st transistor (M11) and the source electrode of the tenth two-transistor (M12)；
The grid of 5th transistor (M5) connects positive first local oscillation signal (LO1+), and drain electrode connects the source electrode and the tenth of the 9th transistor (M9)
The source electrode of transistor (M10)；The grid of 6th transistor (M6) is reversed to the first local oscillation signal (LO1-), and it is brilliant that drain electrode connects the 13rd
The source electrode of the source electrode of body pipe (M13) and the 14th transistor (M14)；The grid of 7th transistor (M7) is reversed to be believed to the second local oscillator
Number I (LO2-I-), drain electrode connect a laod network left side；The grid of 8th transistor (M8) meets the second local oscillation signal I (LO2-I+) of forward direction,
Drain electrode connects the laod network right side；The grid of 9th transistor (M9) meets the second local oscillation signal I (LO2-I+) of forward direction, and drain electrode connects loaded webs
Network is left；The grid of tenth transistor (M10) is reversed to the second local oscillation signal I (LO2-I-), and drain electrode connects the laod network right side；11st
The grid of transistor (M11) is reversed to the second local oscillation signal I (LO2-I-), and drain electrode connects a laod network left side；Tenth two-transistor
(M12) grid meets the second local oscillation signal I (LO2-I+) of forward direction, and drain electrode connects the laod network right side；The grid of 13rd transistor (M13)
Pole meets the second local oscillation signal I (LO2-I+) of forward direction, and drain electrode connects a laod network left side；The grid of 14th transistor (M14) it is reversed to
Second local oscillation signal I (LO2-I-), drain electrode connect the laod network right side；Laod network is left and the laod network right side connects power supply.
Wherein current injection structures are：The source electrode of 15th transistor (M15) connects power supply, and grid and drain electrode are connected with each other simultaneously
Connect current source；16th transistor (M16) source electrode connects power supply, and grid is connected with the grid of the 15th transistor, and drain electrode connects electric capacity
C1 and inductance L1.
Wherein support structures are left and the support structures right side is：17th transistor (M17) source electrode connects power supply, grid and drain electrode phase
Connect；Mono- section of resistance R2 connects power supply；Mono- section of power supply of electric capacity C2, the drain electrode of the 17th transistor and resistance R2, electric capacity C2 it is another
One end connects.
1. the realization of low-noise characteristic.The double-balanced quadrature mixer that the present invention uses can be divided into three-level, such as Fig. 1 institutes
Show.Wherein M1~M2 is transconductance stage, and M3~M6 is first switch level, and M7~M14 is second switch level.Transconductance stage metal-oxide-semiconductor works
In small-signal saturation region, switching stage metal-oxide-semiconductor is operated under big signal mode, and its workspace is with local oscillation signal in saturation region and cut-off
Switch between area.First by radio-frequency input signals RF and the first local oscillation signal LO when circuit works1Lower mixing is carried out, obtains first
Intermediate-freuqncy signal IF=RF-LO1；Again by output signal and the second local oscillation signal LO2Carry out uppermixing, the intermediate frequency of final output second letter
Number IF=RF-LO1+LO2, wherein fLO1=2fLO2.In LO2Positive half period in, transconductance stage electric current flows to I branch by M3 and M5
Road；In LO2Negative half-cycle in, transconductance stage electric current flows to Q branch roads by M4 and M6.By making LO1With LO2Keep 45 ° of phases
Difference, when making second switch level progress State Transferring, without DC current, each signal waveforms such as Fig. 2 institutes in transistor M7~M14
Show.And then eliminate the flicker noise of second switch level.And flicker noise caused by first switch level is transferred to common mode
I/Q branch roads, finally suppressed in a differential manner by second switch level.Because two-stage switching transistor is connected in a manner of Cascode
It is connected together, therefore the thermal noise performance of circuit also will lifting.
During circuit design, transconductance stage and first switch level M1~M6 transistor size are less than second switch level transistor
Size, to reduce parasitic capacitance, ensure that circuit can turn on faster.During offset design, by two switching stage crystalline substances
Body pipe is biased in overdrive voltage close to zero place, the symmetry that circuit turns on/off the work period is improved, so as to optimize electricity
Interport isolation and the harmonics restraint ratio on road.Increase the overdrive voltage of transconductance stage in the case where power consumption allows simultaneously, with
Improve the input linear degree of circuit.
2. low-power consumption and the realization of high-gain.There is the quiescent current injecting structure that thermal noise eliminates shown in Fig. 3, have
Power consumption is reduced with improving the effect of gain.By the current injection structures that M15 and M16 are formed electric current I is extracted from transconductance stageB, reduce
DC current on switching stage and load.Thus reduce the voltage on switching stage metal-oxide-semiconductor and load resistance so that
Under relatively low supply voltage, switching stage, transconductance stage still have enough voltage margins.And then serve the work for reducing power consumption
With.Meanwhile by adjusting electric current ascending pipe M16 parameter, it can increase in the case where maintained switch level work condition is constant
The DC current of transconductance stage, so as to realize the raising of circuit mutual conductance and gain.
3. the suppression pair Injection Current white noise.Using electric capacity C1 short circuits between M16 drain electrode and ground, the C1 in design
Larger capacitance is selected, the white noise introduced by current injection structures is shorted to ground.Inductance L1 purpose is to avoid signal
Ground is flowed to by C1, while also transconductance stage metal-oxide-semiconductor drain parasitic capacitance compensated, reduces to its charging interval, plays drop
The effect of low first switch level flicker noise.
4. the realization of laod network.Remove in the output signal of gilbert's double balanced mixer and believe comprising desired RF-LO
Extra, the burr (Spur) also formed comprising each rank odd harmonic.The laod network being made up of RC and PMOS is as shown in Figure 4.By
RC form laod network transfer function be：
Wherein fH=1/2 π RC are the three dB bandwidth of the network.The laod network has low pass special type, by designing R2, C2
Parameters on output signals in high fdrequency component be filtered, further lifted frequency mixer noiseproof feature.It is simultaneously brilliant using p-type
Body pipe M17 is in parallel with RC network, the portion of electrical current in load is flowed through from PMOS, reduces the pressure drop on resistance R2, and raising is opened
Close level and the voltage margin of transconductance stage transistor.
Claims (9)
1. a kind of low-noise low-power consumption high-gain frequency mixer, Kilbert unit is balanced using Orthogonal Double, two kinds of different frequencies are used
The local oscillation signal of rate, including：It is single to input transconductance cell, first switch unit, second switch unit, electric current injection unit and load
Member.Wherein,
Input transconductance cell realizes the conversion of radio frequency voltage signal and current radio frequency signal；
First switch unit is modulated to the current radio frequency signal of input transconductance cell output by electric current commutation；
Second switch unit is commutated by electric current to the current radio frequency signal that first switch unit exports and carries out secondary modulation, and second
Local oscillation signal LO2 frequencies are twice of the first local oscillation signal LO1, and the two phase difference is 45 °, first switch unit and second switch
Unit does not have DC current to flow through, to realize the elimination of low-frequency flicker noise when carrying out state switching in transistor；
The radio-frequency current that electric current injection unit exports to mutual conductance input block extracts, to improve circuit equivalent mutual conductance, carry
High circuit gain；
By using PMOS cross-coupled pair as output loading, the current signal that second switch unit is exported turns load unit
It is changed to voltage signal；
Difference intermediate frequency output voltage signal exports between second switch unit and load unit.
2. frequency mixer according to claim 1, it is characterised in that the input transconductance cell includes：The first transistor
And second transistor (M2) (M1)；Wherein, the source electrode of the first transistor (M1) is connected to ground, and grid connects with radio-frequency signal source
Connect, drain electrode is connected with the source electrode of third transistor (M3) and the source electrode of the 4th transistor (M4)；The second transistor (M2)
Source electrode is connected to ground, and grid is connected with radio-frequency signal source, drain electrode and the source electrode and the 6th transistor (M6) of the 5th transistor (M5)
Source electrode connection.
3. frequency mixer according to claim 2, it is characterised in that the first switch unit includes：Third transistor
(M3), the 4th transistor (M4), the 5th transistor (M5) and the 6th transistor (M6)；Wherein, the third transistor (M3)
Grid is connected with positive first local oscillation signal (LO1+), the source electrode and the 8th transistor (M8) of drain electrode and the 7th transistor (M7)
Source electrode is connected, and source electrode is connected with the drain electrode of the first transistor (M1)；The grid of 4th transistor (M4) and reverse first
The signal (LO1-) that shakes is connected, and drain electrode is connected with the source electrode of the 11st transistor (M11) and the source electrode of the tenth two-transistor (M12),
Source electrode is connected with the drain electrode of the first transistor (M1)；The grid of 5th transistor (M5) and the first local oscillation signal (LO1 of forward direction
+) connection, drain and be connected with the source electrode of the 9th transistor (M9) and the source electrode of the tenth transistor (M10), source electrode and second transistor
(M2) drain electrode connection；The grid of 6th transistor (M6) is connected with reverse first local oscillation signal (LO1-), drain electrode and the
The source electrode of the source electrode of 13 transistors (M13) and the 14th transistor (M14) connects, the drain electrode of source electrode and second transistor (M2)
Connection.
4. frequency mixer according to claim 3, it is characterised in that the second switch unit includes：7th transistor
(M7), the 8th transistor (M8), the 9th transistor (M9), the tenth transistor (M10), the 11st transistor (M11), the 12nd crystalline substance
Body pipe (M12), the 13rd transistor (M13) and the 14th transistor (M14)；Wherein, the grid of the 7th transistor (M7)
It is connected with reverse second local oscillation signal I (LO2-I-), drain electrode and the left connection of laod network, source electrode and the leakage of third transistor (M3)
Pole connects；The grid of 8th transistor (M8) is connected with the second local oscillation signal I (LO2-I+) of forward direction, drain electrode and laod network
Right connection, source electrode are connected with the drain electrode of third transistor (M3)；The grid of 9th transistor (M9) and positive second local oscillator
Signal I (LO2-I+) connections, drain electrode and the left connection of laod network, source electrode are connected with the drain electrode of the 5th transistor (M5)；Described
The grid of ten transistors (M10) is connected with reverse second local oscillation signal I (LO2-I-), drain electrode and the right connection of laod network, source electrode
Drain electrode with the 5th transistor (M5) is connected；The grid of 11st transistor (M11) and reverse second local oscillation signal I
(LO2-I-) connect, drain electrode and the left connection of laod network, source electrode are connected with the drain electrode of the 4th transistor (M4)；Described 12nd is brilliant
The grid of body pipe (M12) is connected with the second local oscillation signal I (LO2-I+) of forward direction, drain electrode and the right connection of laod network, source electrode and the
The drain electrode connection of four transistors (M4)；The grid of 13rd transistor (M13) and the second local oscillation signal I (LO2-I+) of forward direction
Connection, drain electrode and the left connection of laod network, source electrode are connected with the drain electrode of the 6th transistor (M6)；14th transistor
(M14) grid is connected with reverse second local oscillation signal I (LO2-I-), drain electrode and the right connection of laod network, source electrode and the 6th crystalline substance
The drain electrode connection of body pipe (M6).
5. frequency mixer according to claim 4, it is characterised in that the electric current injection unit includes：15th transistor
(M15), the 16th transistor (M16) and the first electric capacity (C1), the first inductance (L1)；Wherein, the 15th transistor (M15)
Source electrode be connected with power supply, grid and drain electrode be connected with each other and be connected with current source；16th transistor (M16) source electrode with
Power supply is connected, and grid is connected with the grid of the 15th transistor, and drain electrode is connected with the first electric capacity (C1) and the first inductance (L1).
6. frequency mixer according to claim 5, it is characterised in that the load unit includes：17th transistor (M17)
And second resistance (R2), the second electric capacity (C2)；Wherein, the 17th transistor (M17) source electrode is connected with power supply, grid and leakage
Pole is connected with each other and is connected with the drain electrode of the 7th transistor (M7)；Second resistance (R2) first end is connected with power supply, and second
End is connected with the drain electrode of the 7th transistor (M7)；Second electric capacity (C2) first end is connected with power supply, and the second end is brilliant with the 7th
The drain electrode connection of body pipe (M7).
7. frequency mixer according to claim 6, it is characterised in that the 15th transistor (M15), the 16th transistor
(M16), the 17th source electrode and second resistance (R2), the first end of the second electric capacity (C2) are connected with power vd D；Described first
Transistor (M1), the source electrode of second transistor (M2) and the first electric capacity (C1) are connected with ground terminal GND.
8. frequency mixer according to claim 7, it is characterised in that the 15th transistor (M15), the 16th transistor
(M16) and the 17th transistor (M17) is PMOS transistor, and remaining is nmos pass transistor.
9. frequency mixer according to claim 8, it is characterised in that the voltage source (VDD) provides DC offset voltage, and
Magnitude of voltage is 3.3V.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110719072A (en) * | 2019-08-23 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | Third harmonic mixer circuit |
| CN109557512B (en) * | 2018-12-06 | 2020-08-04 | 航天南湖电子信息技术股份有限公司 | Radar receiver with high sensitivity and high dynamic range |
| WO2022247410A1 (en) * | 2021-05-28 | 2022-12-01 | 深圳市中兴微电子技术有限公司 | Frequency mixer and transceiver |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722609A (en) * | 2004-01-30 | 2006-01-18 | 三星电子株式会社 | The mixer that is used for direct conversion transceiver with improvement second intermodulation product |
| CN101145760A (en) * | 2006-09-13 | 2008-03-19 | 联发科技股份有限公司 | Low noise mixer and method with reduced distortion |
| US20150215051A1 (en) * | 2014-01-27 | 2015-07-30 | Gwangju Institute Of Science And Technology | Mixer and mixing method |
-
2017
- 2017-09-30 CN CN201710919264.0A patent/CN107896093B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722609A (en) * | 2004-01-30 | 2006-01-18 | 三星电子株式会社 | The mixer that is used for direct conversion transceiver with improvement second intermodulation product |
| CN101145760A (en) * | 2006-09-13 | 2008-03-19 | 联发科技股份有限公司 | Low noise mixer and method with reduced distortion |
| US20150215051A1 (en) * | 2014-01-27 | 2015-07-30 | Gwangju Institute Of Science And Technology | Mixer and mixing method |
Non-Patent Citations (2)
| Title |
|---|
| DONGJU LEE等: ""Low Flicker Noise, Odd-Phase Master LO Active Mixer Using a Low Switching Frequency Scheme"", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
| 潘兆琳: ""低噪声零中频混频器"", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109557512B (en) * | 2018-12-06 | 2020-08-04 | 航天南湖电子信息技术股份有限公司 | Radar receiver with high sensitivity and high dynamic range |
| CN110719072A (en) * | 2019-08-23 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | Third harmonic mixer circuit |
| CN110719072B (en) * | 2019-08-23 | 2023-07-04 | 中国电子科技集团公司第十三研究所 | Third harmonic mixer circuit |
| WO2022247410A1 (en) * | 2021-05-28 | 2022-12-01 | 深圳市中兴微电子技术有限公司 | Frequency mixer and transceiver |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107896093B (en) | 2020-04-24 |
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