CN107887403B

CN107887403B - Organic light emitting diode display and method of fabricating the same

Info

Publication number: CN107887403B
Application number: CN201610861810.5A
Authority: CN
Inventors: 韩媛媛; 朱修剑
Original assignee: Kunshan Govisionox Optoelectronics Co Ltd
Current assignee: Kunshan Govisionox Optoelectronics Co Ltd
Priority date: 2016-09-29
Filing date: 2016-09-29
Publication date: 2020-11-17
Anticipated expiration: 2036-09-29
Also published as: CN107887403A

Abstract

An organic light emitting diode display and a method for manufacturing the same, wherein the organic light emitting diode display comprises an array element substrate and an organic light emitting diode substrate which are oppositely jointed together. The array element substrate comprises a first substrate, a thin film transistor array element positioned on the first substrate, and a first bonding electrode and a second bonding electrode positioned on the thin film transistor array element. The organic light emitting diode substrate comprises a second substrate, a third bonding electrode positioned on the first surface of the second substrate and an organic light emitting diode positioned on the second surface opposite to the second substrate. The array element substrate and the organic light-emitting diode substrate are relatively jointed together, so that the LTPS preparation process and the OLED preparation process are separately carried out, the prepared flexible OLED substrate can be cut into any shape, one-time production of various products under a certain PPI is realized, multiple sets of evaporation masks are not required, the cost is saved, and the production efficiency and the yield are improved.

Description

Organic light emitting diode display and method of fabricating the same

Technical Field

The invention relates to the technical field of flat panel display, in particular to an organic light emitting diode display and a manufacturing method thereof.

Background

An Organic Light-Emitting Diode (OLED) is an active Light-Emitting device, has the advantages of high contrast, wide viewing angle, low power consumption, fast response speed, thinner volume and the like, and is expected to become the next generation of mainstream flat panel display technology.

Low temperature polysilicon thin film transistors (LTPS TFTs) have been commonly used on array substrates of flat panel displays such as active matrix organic light emitting diode displays (AMOLEDs). The manufacturing process of the AMOLED display is mainly divided into two parts: low temperature poly-silicon (LTPS) fabrication and Organic Light Emitting Diode (OLED) fabrication. Specifically, an amorphous silicon layer (a-Si) is generally deposited on a substrate, then the amorphous silicon is melted and crystallized by heat treatment to form a smooth polycrystalline silicon layer (p-Si) with crystal grains, and the polycrystalline silicon layer is used as a channel layer of a Thin Film Transistor (TFT) to fabricate and form a low temperature polycrystalline silicon thin film transistor (LTPS TFT); and then, continuously manufacturing an anode, an organic light emitting layer and a cathode of an Organic Light Emitting Diode (OLED) on the low-temperature polycrystalline silicon thin film transistor, thereby forming the array substrate. Finally, an active matrix organic light emitting diode display (AMOLED) that emits light at the bottom or top is manufactured by bonding an array substrate formed with low temperature polysilicon thin film transistor (LTPS TFT) array elements and Organic Light Emitting Diodes (OLEDs) to a separate substrate for encapsulation.

In this case, the yield of the organic light emitting diode display (AMOLED) due to the active matrix is determined by the low temperature polysilicon thin film transistor (LTPS TFT) array element and the Organic Light Emitting Diode (OLED) substrate together. Therefore, even though excellent low temperature polysilicon thin film transistor (LTPS TFT) array elements have been fabricated, if a defect is generated due to external particles or other factors when an Organic Light Emitting Diode (OLED) substrate is subsequently fabricated, the organic light emitting diode display is determined to be a defective level, and expenses and material costs spent on non-defective thin film transistor array elements are lost. Therefore, the conventional manufacturing method has a long manufacturing process, and is prone to cause poor accumulation, thereby affecting the production efficiency.

Disclosure of Invention

The invention aims to provide an organic light-emitting diode display and a manufacturing method thereof, and aims to solve the problems that the conventional manufacturing method is long in manufacturing process, easy to cause poor accumulation and low in production efficiency.

The invention provides an organic light emitting diode display, which comprises an array element substrate and an organic light emitting diode substrate which are oppositely jointed together, wherein:

the array element substrate comprises a first substrate, a thin film transistor array element positioned on the first substrate, and a first bonding electrode and a second bonding electrode positioned on the thin film transistor array element, wherein the first bonding electrode and the second bonding electrode are insulated from each other, and the first bonding electrode is electrically connected with a driving thin film transistor in the thin film transistor array element;

the organic light-emitting diode substrate comprises a second substrate, a third bonding electrode positioned on the first surface of the second substrate, and an organic light-emitting diode positioned on the second surface opposite to the second substrate, wherein the organic light-emitting diode comprises a first electrode, a second electrode and an organic light-emitting layer positioned between the first electrode and the second electrode, and the first electrode of the organic light-emitting diode is electrically connected with the third bonding electrode;

the array element substrate and the organic light emitting diode substrate are oppositely jointed together, the first jointing electrode is in contact connection with the third jointing electrode, and the second jointing electrode is electrically connected with the second electrode of the organic light emitting diode.

Further, the thin film transistor array element includes switching thin film transistors and driving thin film transistors, each of the thin film transistors includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, the source electrode and the drain electrode are spaced apart from each other and electrically connected to the semiconductor layer, respectively, the first substrate forms a planarization layer on the thin film transistor array element, a via hole is formed in the planarization layer to expose the source electrode or the drain electrode of the driving thin film transistor, the first bonding electrode and the second bonding electrode are formed on the planarization layer, and the first bonding electrode is electrically connected to the source electrode or the drain electrode of the driving thin film transistor through the via hole.

Furthermore, the number of the first bonding electrodes is multiple and is distributed in a matrix, one first bonding electrode is arranged in each sub-pixel region, and the first bonding electrode in each sub-pixel region is electrically connected with the source electrode or the drain electrode of the driving thin film transistor in the sub-pixel region.

Further, the second bonding electrodes are distributed at the gaps between the first bonding electrodes and connected in a grid shape.

Further, the second bonding electrodes are distributed only on the peripheral edge region of the array element substrate and connected in a square shape.

Furthermore, a first contact hole penetrates through the second substrate, and the first electrode of the organic light emitting diode is electrically connected with the third bonding electrode through the first contact hole.

Furthermore, a fourth bonding electrode is further disposed on the first surface of the second substrate, the third bonding electrode and the fourth bonding electrode are insulated from each other, a fifth bonding electrode is further disposed on the second surface of the second substrate, a second contact hole is further formed in the second substrate in a penetrating manner, the second electrode of the organic light emitting diode is electrically connected with the fifth bonding electrode, and the fifth bonding electrode is electrically connected with the fourth bonding electrode through the second contact hole; when the array element substrate and the organic light-emitting diode substrate are oppositely jointed together, the second jointing electrode is in contact connection with the fourth jointing electrode.

Furthermore, the number of the third bonding electrodes is multiple and is distributed in a matrix, one third bonding electrode is arranged in each sub-pixel region, and the third bonding electrode in each sub-pixel region is electrically connected with the first electrode of the organic light emitting diode in the sub-pixel region.

Further, the fourth bonding electrodes are distributed in the gaps between the third bonding electrodes, the fourth bonding electrodes are distributed discretely or connected in a grid shape, the fifth bonding electrodes are distributed in the gaps between the first electrodes, and the fifth bonding electrodes are distributed discretely or connected in a grid shape.

Furthermore, the fourth bonding electrodes are only distributed in the peripheral edge area of the organic light emitting diode substrate, and the fourth bonding electrodes are distributed discretely or connected into a square shape; the fifth bonding electrodes are only distributed on the peripheral edge area of the organic light-emitting diode substrate and are distributed discretely or connected into a square shape.

Further, the second bonding electrodes are distributed only on the peripheral edge area of the array element substrate; when the array element substrate and the organic light-emitting diode substrate are oppositely jointed together, the second jointing electrode is electrically connected with the second electrode of the organic light-emitting diode through a conductive medium.

Further, the second substrate is a flexible substrate and is formed by sequentially and alternately laminating a plurality of organic substrate layers and a plurality of inorganic barrier layers.

The invention also provides a manufacturing method of the organic light-emitting diode display, which is used for manufacturing the organic light-emitting diode display and comprises the following steps:

separately manufacturing and forming the array element substrate and the organic light emitting diode substrate; and

and oppositely bonding the array element substrate and the organic light emitting diode substrate which are separately manufactured and formed.

Further, the manufacturing and forming of the organic light emitting diode substrate comprises the steps of:

providing a rigid carrier substrate;

manufacturing each film layer structure for forming the organic light-emitting diode substrate on the hard carrier substrate;

after each film layer structure forming the organic light-emitting diode substrate is manufactured, the hard carrier substrate is stripped.

In the organic light emitting diode display and the manufacturing method thereof provided by this embodiment, a double-substrate process is adopted to manufacture the organic light emitting diode display, that is, the array element substrate and the organic light emitting diode substrate are separately manufactured and then are bonded together to form the organic light emitting diode display. Therefore, the manufacturing process of the array element (TFT) and the manufacturing process of the Organic Light Emitting Diode (OLED) are separately carried out, the manufacturing of the OLED is not influenced by the TFT manufacturing process, the efficiency of production management is improved, the manufacturing process is shortened, the defect rate in the production process is reduced, and the product yield is improved.

Drawings

Fig. 1 is a schematic cross-sectional view of an array element substrate according to a first embodiment of the invention.

Fig. 2 is a schematic cross-sectional view of an organic light emitting diode substrate according to a first embodiment of the invention.

FIG. 3 is a cross-sectional view of an OLED display according to a first embodiment of the present invention.

Fig. 4 is a schematic circuit diagram of fig. 3.

Fig. 5 is a schematic plan view of the array substrate of fig. 1.

Fig. 6a to 6d are schematic cross-sectional views illustrating a manufacturing process of the array device substrate of fig. 1.

Fig. 7 is a schematic front view of the organic light emitting diode substrate in fig. 2.

Fig. 8 is a schematic back view of the organic light emitting diode substrate in fig. 2.

Fig. 9a to 9h are schematic cross-sectional views illustrating a manufacturing process of the organic light emitting diode substrate in fig. 2.

FIG. 10 is a cross-sectional view of an OLED display according to a second embodiment of the present invention.

Fig. 11 is a schematic plan view of an array element substrate according to a second embodiment of the present invention.

Fig. 12 is a schematic front view of an organic light emitting diode substrate according to a second embodiment of the invention.

Fig. 13 is a schematic back view of an oled substrate according to a second embodiment of the invention.

FIG. 14 is a cross-sectional view of an OLED display according to a third embodiment of the present invention.

Fig. 15 is a schematic front view of an organic light emitting diode substrate according to a third embodiment of the invention.

Fig. 16 is a schematic back view of an oled substrate according to a third embodiment of the invention.

Detailed Description

To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the present invention will be made with reference to the accompanying drawings and examples.

[ first embodiment ]

Fig. 1 is a schematic cross-sectional view of an array element substrate according to a first embodiment of the present invention, fig. 2 is a schematic cross-sectional view of an organic light emitting diode substrate according to the first embodiment of the present invention, fig. 3 is a schematic cross-sectional view of an organic light emitting diode display according to the first embodiment of the present invention, and fig. 1 to 3 are also included, the organic light emitting diode display includes an array element substrate 10 and an organic light emitting diode substrate 20, the array element substrate 10 and the organic light emitting diode substrate 20 are separately manufactured, a thin film transistor array element (TFT) is formed on the array element substrate 10, an Organic Light Emitting Diode (OLED) is formed on the organic light emitting diode substrate 20, and then the two

substrates

10 and 20 are bonded together to form the organic light emitting diode display.

Fig. 4 is a circuit diagram of fig. 3, and referring to fig. 4, the organic light emitting diode display is configured with a plurality of sub-pixels P arranged in a matrix, a plurality of data lines D arranged in parallel between the sub-pixels P, a plurality of scan lines G arranged in parallel between the sub-pixels P and intersecting the data lines D, and a plurality of power lines Vdd arranged in parallel between the sub-pixels P and parallel to the data lines D. A switching thin film transistor T1, a driving thin film transistor T2, a storage capacitor Cs, and an Organic Light Emitting Diode (OLED) are disposed in each sub-pixel region. The plurality of sub-pixels P include sub-pixels of different colors such as red (R), green (G), and blue (B), for example.

The power supply line Vdd is connected to the source (or drain) of the driving thin film transistor T2 and to the gate of the driving thin film transistor T2 through the storage capacitor Cs; a first electrode (e.g., an anode) of the Organic Light Emitting Diode (OLED) is connected to a drain (or a source) of the driving thin film transistor T2, and a second electrode (e.g., a cathode) of the Organic Light Emitting Diode (OLED) is connected to a common potential Vss; the gate electrode of the switching thin film transistor T1 is connected to the scan line G to receive a row scan signal (Vscan), the source electrode (or drain electrode) of the switching thin film transistor T1 is connected to the data line D to receive a data signal (Vdata), and the drain electrode (or source electrode) of the switching thin film transistor T1 is connected to the gate electrode of the driving thin film transistor T2.

A scanning line G, a data line D, a power line Vdd, and a switching thin film transistor T1, a driving thin film transistor T2, and a storage capacitor Cs in each sub-pixel region are formed on the array element substrate 10; an Organic Light Emitting Diode (OLED) in each sub-pixel region is formed on the organic light emitting diode substrate 20. That is, the thin film transistor array element (TFT) and the Organic Light Emitting Diode (OLED) are separately fabricated on different substrates, that is, the thin film transistor array element (TFT) is fabricated on the array element substrate 10, the Organic Light Emitting Diode (OLED) is fabricated on the organic light emitting diode substrate 20, then the two

substrates

10 and 20 are bonded together, and the thin film transistor array element (TFT) on the array element substrate 10 and the Organic Light Emitting Diode (OLED) on the organic light emitting diode substrate 20 are electrically connected by a bonding electrode (described in detail below).

Referring to fig. 1, the array substrate 10 includes a first substrate 11, and the first substrate 11 is provided with a scan line G, a data line D, a power line Vdd, a tft array device and a storage capacitor Cs, wherein the tft array device includes a switching tft T1 and a driving tft T2. For convenience, only the driving thin film transistor T2 is illustrated in fig. 1, and the scan line G, the data line D, the power supply line Vdd, the switching thin film transistor T1, and the storage capacitor Cs are not illustrated.

The array element substrate 10 is provided with a planarization layer 17 on a thin film transistor array element (TFT), and the planarization layer 17 covers the TFT for protecting the TFT and planarizing the top side of the TFT. The planarization layer 17 has a via hole 170 therein to expose the drain (or source) of the driving tft T2.

Fig. 5 is a schematic plan view of the array element substrate in fig. 1, and referring to fig. 1 and fig. 5, the array element substrate 10 further has a first bonding electrode 18 and a second bonding electrode 19 on the planarization layer 17. The number of the first bonding electrodes 18 is plural and distributed in an array, one first bonding electrode 18 is disposed in each sub-pixel region, and the first bonding electrode 18 in each sub-pixel region is electrically connected to the drain (or source) of the driving tft T2 in the sub-pixel region through the via hole 170 in the planarization layer 17. The second bonding electrode 19 and the first bonding electrode 18 are insulated from each other. In the present embodiment, the second bonding electrodes 19 are distributed at the gaps between the first bonding electrodes 18 and connected in a grid shape.

Fig. 6a to 6d are schematic cross-sectional views illustrating a manufacturing process of the array element substrate in fig. 1, it should be noted that fig. 6a to 6d are only one exemplary method for manufacturing the array element substrate 10, and a specific manufacturing method of the array element substrate 10 is not limited in the present invention.

Referring to fig. 6a, a buffer layer (not shown) formed of an insulating material is first formed on a first substrate 11 by a method such as Chemical Vapor Deposition (CVD), an amorphous silicon layer (a-Si) is deposited on the buffer layer, and then the amorphous silicon is melted and crystallized by a heat treatment (e.g., laser irradiation) to form a polycrystalline silicon layer (p-Si), and then a thin film transistor array element (TFT) is formed on the polycrystalline silicon layer. Currently, Excimer Laser Annealing (ELA) crystallization is widely used in the industry, and after ELA laser irradiation, photolithography is performed to leave the polysilicon layer as the semiconductor layer 12 of the tft T2 only in the tft region in each sub-pixel, and the polysilicon layer in other regions is etched away. The first substrate 11 may be a glass substrate or a plastic substrate.

Referring to fig. 6B, a gate insulating layer 13 formed of an insulating material is formed on the first substrate 11 by a method such as Chemical Vapor Deposition (CVD), the gate insulating layer 13 covers the semiconductor layer 12 of the thin film transistor T2, the gate electrode 14 of the thin film transistor T2 is formed on the gate insulating layer 13 by a process such as deposition film formation and etching, and then impurity ions such as boron (B) ions are doped to both sides of the semiconductor layer 12 using the gate electrode 14 as a mask, the impurity ions are implanted into the semiconductor layer 12 to form a source region 12a and a drain region 12c of the thin film transistor, and a portion of the semiconductor layer 12 where no impurity ions are implanted forms a channel region 12B of the thin film transistor, the channel region 12B being located between the source region 12a and the drain region 12 c.

Referring to fig. 6c, an interlayer insulating layer 15 formed of an insulating material is formed on the gate insulating layer 13 by, for example, Chemical Vapor Deposition (CVD), the interlayer insulating layer 15 covers the gate electrode 14 of the thin film transistor T2, source and drain through

holes

131 and 132 are formed in the interlayer insulating layer 15 and the gate insulating layer 13 to expose the source and

drain regions

12a and 12c of the semiconductor layer 12 of the thin film transistor T2, and the source and drain

electrodes

161 and 162 of the thin film transistor T2 are formed on the interlayer insulating layer 15 by, for example, deposition and etching processes, to be spaced apart from each other and electrically connected to the source and

drain regions

12a and 12c of the semiconductor layer 12 of the thin film transistor T2 through the source and drain through

holes

131 and 132, respectively.

Referring to fig. 6d, a planarization layer 17 made of an insulating material is formed on the interlayer insulating layer 15 by a coating (coating) or Chemical Vapor Deposition (CVD) method, the planarization layer 17 covers the source electrode 161 and the drain electrode 162 of the tft T2, a via hole 170 is formed in the planarization layer 17 at a position corresponding to the drain electrode 162 or the source electrode 161 of the tft T2, and then the first bonding electrode 18 and the second bonding electrode 19 are formed on the planarization layer 17 by a deposition process and an etching process. A first bonding electrode 18 is correspondingly formed in each sub-pixel region, the first bonding electrode 18 in each sub-pixel region is filled in the via hole 170 to be electrically connected with the drain 162 (or the source 161) of the driving thin film transistor T2 in the sub-pixel region, and the second bonding electrode 19 and the first bonding electrode 18 are insulated and spaced from each other. The material of the first bonding electrode 18 and the second bonding electrode 19 may be Indium Tin Oxide (ITO) or zinc oxide (IZO).

In the above manufacturing method, the driving thin film transistor T2 is exemplified by a top gate type structure. However, the driving thin film transistor T2 may be various types of thin film transistors, such as a bottom gate type thin film transistor, in addition to the top gate type thin film transistor. Similarly, the switching thin film transistor T1 may also be a top gate type structure or a bottom gate type structure.

Fig. 7 is a schematic front view of the organic light emitting diode substrate in fig. 2, and fig. 8 is a schematic back view of the organic light emitting diode substrate in fig. 2. referring to fig. 2, 7 and 8, the organic light emitting diode substrate 20 includes a second base 21, and a first contact hole 213 and a second contact hole 214 are formed through the second base 21. The front surface of the second substrate 21 forms a first electrode 22, an organic light emitting layer 23, and a second electrode 24 of an Organic Light Emitting Diode (OLED) corresponding to each sub-pixel region, and the organic light emitting layer 23 is interposed between the first electrode 22 and the second electrode 24. In each sub-pixel region, the first electrode 22, the organic light emitting layer 23 and the second electrode 24 constitute an Organic Light Emitting Diode (OLED), and when a voltage is applied to the first electrode 22 and the second electrode 24, an electric field is formed between the first electrode 22 and the second electrode 24, so that the organic light emitting layer 23 emits light. The first electrode 22 may be an anode of an Organic Light Emitting Diode (OLED), and the second electrode 24 may be a cathode of the Organic Light Emitting Diode (OLED). The second electrode 24 may be a non-patterned planar electrode disposed over the entire surface.

The rear surface of the second substrate 21 forms a third bonding electrode 25 and a fourth bonding electrode 26. The number of the third bonding electrodes 25 is plural and is distributed in an array, one third bonding electrode 25 is correspondingly arranged in each sub-pixel region, and the first electrode 22 of the Organic Light Emitting Diode (OLED) in each sub-pixel region is electrically connected with the third bonding electrode 25 in the sub-pixel region through the first contact hole 213. The fourth bonding electrode 26 and the third bonding electrode 25 are insulated from each other. In the present embodiment, the fourth bonding electrodes 26 are distributed in the gaps between the third bonding electrodes 25, the fourth bonding electrodes 26 may be distributed discretely or connected in a grid shape (distributed discretely in fig. 8), and the second electrode 24 of the Organic Light Emitting Diode (OLED) is electrically connected to the fourth bonding electrodes 26 through the second contact hole 214.

Furthermore, a fifth bonding electrode 27 is disposed on the front surface of the second substrate 21, the fifth bonding electrode 27 and the fourth bonding electrode 26 are disposed correspondingly, the second electrode 24 of the Organic Light Emitting Diode (OLED) is electrically connected to the fifth bonding electrode 27, and the fifth bonding electrode 27 is electrically connected to the fourth bonding electrode 26 through the second contact hole 214. The fifth bonding electrode 27 and the first electrode 22 are insulated from each other. In the present embodiment, the fifth bonding electrodes 27 are distributed at the gaps between the first electrodes 22, and the fifth bonding electrodes 27 may be distributed discretely or connected in a grid shape (distributed discretely as shown in fig. 7).

Fig. 9a to 9h are schematic cross-sectional views illustrating a manufacturing process of the organic light emitting diode substrate in fig. 2, it should be noted that fig. 9a to 9h are only one exemplary method for manufacturing the organic light emitting diode substrate 20, and a specific manufacturing method of the organic light emitting diode substrate 20 is not limited in the present invention.

Referring to fig. 9a, a rigid carrier substrate 30 is provided, and a third bonding electrode 25 and a fourth bonding electrode 26 are formed on the rigid carrier substrate 30 by, for example, deposition, film formation and etching processes. The positions of the third bonding electrode 25 and the fourth bonding electrode 26 correspond to the first bonding electrode 18 and the second bonding electrode 19 described above, respectively. A third bonding electrode 25 is correspondingly arranged in each sub-pixel region, and the fourth bonding electrode 26 and the third bonding electrode 25 are mutually insulated. In the present embodiment, the fourth bonding electrodes 26 are distributed in the gaps between the third bonding electrodes 25, and the fourth bonding electrodes 26 may be distributed discretely or connected in a grid shape (distributed discretely in the present embodiment). The material of the third bonding electrode 25 and the fourth bonding electrode 26 may be Indium Tin Oxide (ITO) or zinc oxide (IZO).

Referring to fig. 9b, a second substrate 21 is formed on the third bonding electrode 25 and the fourth bonding electrode 26. In this embodiment, the second substrate 21 is a flexible substrate and is formed by sequentially and alternately stacking a plurality of organic substrate layers 211 and a plurality of inorganic barrier layers 212, that is, a layer of organic substrate layer 211 is first manufactured, a layer of inorganic barrier layer 212 is then manufactured, a layer of organic substrate layer 211 is then manufactured, and a layer of inorganic barrier layer 212 is then manufactured until the required number of layers is reached. The organic substrate layer 211 is preferably formed by coating an organic polymer solution and heat curing, for example by coating a Polyimide (PI) solution on the rigid carrier substrate 30 by, for example, knife coating (slit) and covering the third bonding electrode 25 and the fourth bonding electrode 26, and then heat curing the coated PI solution (e.g., into a high temperature oven) to form a polyimide film as the organic substrate layer 211 after curing. The inorganic barrier layer 212 is preferably formed on the organic substrate layer 211 by means such as Chemical Vapor Deposition (CVD).

When the array element substrate 10 and the organic light emitting diode substrate 20 are manufactured separately and then bonded to form the organic light emitting diode display, on one hand, the flexible second base 21 can enable the organic light emitting diode substrate 20 and the array element substrate 10 to be attached to form good conductive contact, and on the other hand, as the flexible second base 21 is provided with the organic substrate layers 211 and the inorganic barrier layers 212 which are sequentially and alternately stacked, the water and oxygen blocking capability of the manufactured organic light emitting diode display is effectively improved, and the water and oxygen blocking effect of the display is improved. Further, when the first substrate 11 also employs a flexible substrate, the organic light emitting diode display manufactured may be flexible, and the flexible substrate allows the organic light emitting diode display to be bent and rolled into an arbitrary shape.

Referring to fig. 9c, a first contact hole 213 and a second contact hole 214 are formed in the second substrate 21, and a first electrode 22 and a fifth bonding electrode 27 of an Organic Light Emitting Diode (OLED) are formed on the second substrate 21 by, for example, deposition, film formation and etching processes. Wherein, a first electrode 22 is formed in each sub-pixel region, and the first electrode 22 in each sub-pixel region is electrically connected with the third bonding electrode 25 in the sub-pixel region through the first contact hole 213; the fifth bonding electrodes 27 are insulated from the first electrodes 22, the fifth bonding electrodes 27 are distributed in the gaps between the first electrodes 22, the fifth bonding electrodes 27 may be distributed discretely or connected in a grid shape (distributed discretely in this embodiment), and the fifth bonding electrodes 27 are electrically connected to the fourth bonding electrodes 26 through the second contact holes 214. The material of the first electrode 22 and the fifth bonding electrode 27 of the Organic Light Emitting Diode (OLED) may be Indium Tin Oxide (ITO) or zinc oxide (IZO).

Referring to fig. 9d, a pixel defining layer 28 is formed on the first electrode 22 and the fifth bonding electrode 27 of the Organic Light Emitting Diode (OLED) by coating, printing or photolithography, and the pixel defining layer 28 is formed on the edge regions of the first electrode 22 and the fifth bonding electrode 27, such that the first electrode 22 and the fifth bonding electrode 27 are exposed through the pixel defining layer 28, and different sub-pixel regions of red (R), green (G), blue (B), etc. can be defined at the position of the first electrode 22 by the pixel defining layer 28.

Referring to fig. 9e, an organic light emitting layer 23 of an Organic Light Emitting Diode (OLED) is formed on the first electrode 22 in each sub-pixel region defined by the pixel defining layer 28 by, for example, evaporation to correspondingly form different sub-pixels such as (R), green (G), and blue (B). When the organic light-emitting layer 23 is formed by vapor deposition, the fifth bonding electrode 27 is shielded by a vapor deposition mask (mask) so that the organic light-emitting material is not vapor-deposited on the fifth bonding electrode 27.

Referring to fig. 9f, a second electrode 24 of an Organic Light Emitting Diode (OLED) is then formed on the organic light emitting layer 23 by, for example, evaporation, the second electrode 24 covers the organic light emitting layer 23, and the second electrode 24 is electrically connected to the fifth bonding electrode 27. Wherein, in each sub-pixel region, the first electrode 22, the organic light emitting layer 23 and the second electrode 24 form an Organic Light Emitting Diode (OLED), and it is understood that an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer and other organic functional layers can be formed between the first electrode 22 and the second electrode 24.

Referring to fig. 9g, an encapsulation layer 29 is formed on the second electrode 24 for thin film encapsulation of the Organic Light Emitting Diode (OLED). The encapsulation layer 29 may be a multi-layer structure, such as including an organic layer and an inorganic layer overlapped with each other, or including a multi-layered inorganic layer. The encapsulation layer 29 is preferably composed of at least one organic layer and at least one inorganic layer alternately stacked in sequence to improve the encapsulation effect of the OLED device.

Referring to fig. 9h, the rigid carrier substrate 30 is peeled off from the oled substrate 20. In the field, the hard carrier substrate 30 can be easily peeled off from the organic light emitting diode substrate 20 by selecting appropriate materials for the hard carrier substrate 30, the third bonding electrode 25, the fourth bonding electrode 26 and the second base 21 or by appropriately controlling the manufacturing process.

By the above method, the array element substrate 10 and the organic light emitting diode substrate 20 can be separately manufactured and formed. As shown in fig. 3, the array element substrate 10 and the organic light emitting diode substrate 20 separately formed are bonded to each other, the first bonding electrodes 18 on the array element substrate 10 are respectively connected in contact with the third bonding electrodes 25 on the organic light emitting diode substrate 20, the second bonding electrode 19 on the array element substrate 10 is in contact connection with the fourth bonding electrode 26 on the organic light emitting diode substrate 20, so that the first electrode 22 of the Organic Light Emitting Diode (OLED) in each sub-pixel region is electrically connected to the drain electrode 162 (or the source electrode 161) of the driving thin film transistor T2 in the sub-pixel region through the first contact hole 213, the third bonding electrode 25, the first bonding electrode 18, and the via hole 170, and the second electrode 24 of the Organic Light Emitting Diode (OLED) is connectable to the common potential Vss through the array element substrate 10 through the fifth bonding electrode 27, the second contact hole 214, the fourth bonding electrode 26, and the second bonding electrode 19. After the bonding, a space between the upper and

lower substrates

10 and 20 may be sealed using a sealant (not shown) at an edge region between the bonded upper and

lower substrates

10 and 20, thereby forming the organic light emitting diode display.

Although the array element substrate 10 and the organic light emitting diode substrate 20 are separately manufactured, the first electrode 22 and the second electrode 24 of the Organic Light Emitting Diode (OLED) are electrically connected to the array element substrate 10 through the corresponding bonding electrodes, respectively, so that all electrical signals for driving the organic light emitting diode display can be uniformly input from the array element substrate 10, for example, a flexible circuit board (FPC) may be disposed in the peripheral non-display region of the array element substrate 10, one end of the FPC is connected to the array element substrate 10, and the other end of the FPC is connected to a driving chip (not shown), so that driving signals of the driving chip can be input to the array element substrate 10 through the FPC.

Specifically, the first electrode 22 (e.g., anode) of the Organic Light Emitting Diode (OLED) is electrically connected to the drain (or source) of the driving thin film transistor T2 through the third bonding electrode 25 and the first bonding electrode 18, and the second electrode 24 (e.g., cathode) of the Organic Light Emitting Diode (OLED) is connected to the common potential Vss through the fifth bonding electrode 27, the fourth bonding electrode 26 and the second bonding electrode 19, which can be input from the array element substrate 10 by the driving chip through the flexible circuit board.

In this embodiment, the organic light emitting diode display is manufactured by a double substrate process, that is, the array element substrate 10 and the organic light emitting diode substrate 20 are separately manufactured and then bonded together to form the organic light emitting diode display. Therefore, the manufacturing process of the array element (TFT) and the manufacturing process of the Organic Light Emitting Diode (OLED) are separately carried out, the manufacturing of the OLED is not influenced by the TFT manufacturing process, the efficiency of production management is improved, the manufacturing process is shortened, the defect rate in the production process is reduced, and the product yield is improved.

The second substrate 21 is made into a flexible substrate structure, the organic light emitting diode substrate 20 formed on the flexible second substrate 21 can be cut into any shape, one-time production of various products under a certain PPI is achieved, one set of evaporation mask plate (mask) can correspond to products in various shapes, multiple sets of evaporation mask plates are not needed, cost is saved, and production efficiency and yield are improved.

In addition, since the array element of the array element substrate 10 is formed by using polysilicon having high charge mobility to form low temperature polysilicon (LTPS TFT), the reliability of the array element substrate 10 can be ensured, and the method can be applied to the fabrication of a large-sized AMOLED display.

[ second embodiment ]

Fig. 10 is a schematic cross-sectional view of an organic light emitting diode display according to a second embodiment of the present invention, fig. 11 is a schematic plan view of an array element substrate according to the second embodiment of the present invention, fig. 12 is a schematic front view of the organic light emitting diode substrate according to the second embodiment of the present invention, fig. 13 is a schematic back view of the organic light emitting diode substrate according to the second embodiment of the present invention, and fig. 10 to 13 are also included, wherein the structure and the manufacturing method of the organic light emitting diode display according to the second embodiment are substantially the same as those of the first embodiment, wherein the difference is mainly that the second bonding electrodes 19 on the array element substrate 10 are only distributed on the peripheral edge region of the array element substrate 10 and connected in a "square-shaped" shape (as shown in fig. 11), and correspondingly, the fourth bonding electrodes 26 and the fifth bonding electrodes 27 on the organic light emitting diode substrate 20 are also respectively distributed only on the peripheral edge region of the organic light emitting diode substrate 20 As shown), the fourth bonding electrodes 26 may be discretely distributed or connected in a zigzag shape (in the present embodiment, fig. 13 shows a zigzag shape) in the peripheral edge region, and the fifth bonding electrodes 27 may be discretely distributed or connected in a zigzag shape (in the present embodiment, fig. 12 shows a zigzag shape) in the peripheral edge region. For other structures and manufacturing methods of this embodiment, reference may be made to the first embodiment, which is not described herein again.

[ third embodiment ]

Fig. 14 is a schematic cross-sectional view illustrating an organic light emitting diode display according to a third embodiment of the present invention, fig. 15 is a schematic front view illustrating an organic light emitting diode substrate according to the third embodiment of the present invention, fig. 16 is a schematic back view illustrating the organic light emitting diode substrate according to the third embodiment of the present invention, and fig. 14 to 16 are also included, the structure and the manufacturing method of the organic light emitting diode display according to the third embodiment of the present invention are substantially the same as those of the first embodiment, wherein the difference is mainly that the second bonding electrodes 19 on the array element substrate 10 are only distributed on the peripheral edge region of the array element substrate 10 and are connected in a "t" shape (see fig. 11), the fourth bonding electrodes 26 and the fifth bonding electrodes 27 are not disposed on the organic light emitting diode substrate 20 (see fig. 15 and 16), but a conductive medium 40 (e.g. a conductive paste, see fig. 14) the second electrode 24 of the Organic Light Emitting Diode (OLED) is directly connected to the second bonding electrode 19 of the array element substrate 10, and the second bonding electrode 19 is connected to the common potential Vss. Accordingly, the second contact hole 214 is not required to be formed on the second base 21 of the organic light emitting diode substrate 20. For other structures and manufacturing methods of this embodiment, reference may be made to the first embodiment, which is not described herein again.

Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. An organic light emitting diode display comprising an array element substrate and an organic light emitting diode substrate bonded to each other, wherein:

the array element substrate and the organic light-emitting diode substrate are oppositely jointed together, the first joint electrode is in contact connection with the third joint electrode, and the second joint electrode is electrically connected with the second electrode of the organic light-emitting diode; the second substrate is a flexible substrate and is formed by sequentially and alternately laminating a plurality of organic substrate layers and a plurality of inorganic barrier layers.

2. The organic light-emitting diode display defined in claim 1 wherein the thin-film transistor array elements include switching thin-film transistors and driving thin-film transistors, each thin-film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, the source electrode and the drain electrode being spaced apart from each other and electrically connected to the semiconductor layer, respectively, the first substrate forming a planarization layer on the thin-film transistor array elements, a via hole being formed in the planarization layer to expose the source electrode or the drain electrode of the driving thin-film transistor, the first bonding electrode and the second bonding electrode being formed on the planarization layer, the first bonding electrode being electrically connected to the source electrode or the drain electrode of the driving thin-film transistor through the via hole.

3. The organic light-emitting diode display defined in claim 1, wherein the first bonding electrodes are disposed in a matrix, one first bonding electrode is disposed in each sub-pixel region, and the first bonding electrode in each sub-pixel region is electrically connected to the source or drain of the driving thin-film transistor in the sub-pixel region.

4. The organic light-emitting diode display according to claim 3, wherein the second bonding electrodes are distributed in the gaps between the first bonding electrodes and connected in a grid shape.

5. The organic light-emitting diode display defined in claim 3 wherein the second bonding electrodes are disposed only on the peripheral edge region of the array substrate and connected in a square shape.

6. The organic light-emitting diode display defined in claim 1 wherein a first contact hole is formed through the second substrate, and the first electrode of the organic light-emitting diode is electrically connected to the third bonding electrode through the first contact hole.

7. The organic light emitting diode display defined in claim 6 wherein a fourth bonding electrode is disposed on the first surface of the second substrate, the third bonding electrode and the fourth bonding electrode are insulated from each other, a fifth bonding electrode is disposed on the second surface of the second substrate, a second contact hole is disposed through the second substrate, the second electrode of the organic light emitting diode is electrically connected to the fifth bonding electrode, and the fifth bonding electrode is electrically connected to the fourth bonding electrode through the second contact hole; when the array element substrate and the organic light-emitting diode substrate are oppositely jointed together, the second jointing electrode is in contact connection with the fourth jointing electrode.

8. The organic light emitting diode display defined in claim 7 wherein the third bonding electrodes are plural and distributed in a matrix, one third bonding electrode is disposed in each sub-pixel region, and the third bonding electrode in each sub-pixel region is electrically connected to the first electrode of the organic light emitting diode in the sub-pixel region.

9. The organic light-emitting diode display defined in claim 8, wherein the fourth bonding electrodes are distributed in the gaps between the third bonding electrodes, the fourth bonding electrodes are distributed discretely or connected in a grid pattern, the fifth bonding electrodes are distributed in the gaps between the first bonding electrodes, and the fifth bonding electrodes are distributed discretely or connected in a grid pattern.

10. The organic light-emitting diode display according to claim 8, wherein the fourth bonding electrodes are distributed only in the peripheral edge region of the organic light-emitting diode substrate, and the fourth bonding electrodes are distributed discretely or connected in a shape of a Chinese character kou; the fifth bonding electrodes are only distributed on the peripheral edge area of the organic light-emitting diode substrate and are distributed discretely or connected into a square shape.

11. The organic light-emitting diode display defined in claim 6 wherein the second bonding electrodes are disposed only on the peripheral edge region of the array substrate; when the array element substrate and the organic light-emitting diode substrate are oppositely jointed together, the second jointing electrode is electrically connected with the second electrode of the organic light-emitting diode through a conductive medium.

12. A method of manufacturing an organic light emitting diode display, for manufacturing an organic light emitting diode display according to any one of claims 1 to 11, characterized in that the manufacturing method comprises the steps of:

13. The method of claim 12, wherein forming the oled substrate includes:

providing a rigid carrier substrate;