CN107863957B - MOSFET digital quantity output circuit - Google Patents
MOSFET digital quantity output circuit Download PDFInfo
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- CN107863957B CN107863957B CN201711282985.1A CN201711282985A CN107863957B CN 107863957 B CN107863957 B CN 107863957B CN 201711282985 A CN201711282985 A CN 201711282985A CN 107863957 B CN107863957 B CN 107863957B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018557—Coupling arrangements; Impedance matching circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
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Abstract
The invention provides a MOSFET digital quantity output circuit, comprising: a MOSFET and a monitoring circuit; the MOSFET is respectively connected with the main controller and the load and is used for controlling the on-off of the load according to a digital quantity output signal output by the main controller; the monitoring circuit is respectively connected with the MOSFET and the main controller, and is used for monitoring the on-off signal of the MOSFET and feeding back a digital quantity output state feedback signal to the main controller according to the on-off signal of the MOSFET. The technical scheme provided by the invention can realize real-time monitoring of the output state of the MOSFET through the monitoring circuit, thereby realizing real-time monitoring and protection of the digital quantity output state.
Description
Technical Field
The invention relates to a digital output circuit technology, in particular to a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) digital output circuit.
Background
The digital output circuit can convert a weak digital signal output by a computer into a digital driving signal capable of controlling a production process, and is widely applied to industrial design.
The digital quantity output circuit is different according to different loads, such as: the load such as pilot lamp, relay, contactor, electrode and valve can select different power amplification device as the switch element and constitute switch drive circuit. At present, a relay or a MOSFET is generally used as a switching element in a digital output circuit, wherein the driving power of the relay is relatively low, and the MOSFET is often used as the switching element in a high-power situation.
However, in the digital output circuit using the MOSFET as the switching element, it is impossible to determine whether the digital output is working normally, and thus it is impossible to protect the digital output state in real time.
Disclosure of Invention
In view of the above, the present invention provides a MOSFET digital output circuit, which is used to implement real-time monitoring and protection of digital output status.
In order to achieve the above object, an embodiment of the present invention provides a MOSFET digital output circuit, including: a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a monitoring circuit;
the MOSFET is respectively connected with the main controller and the load and is used for controlling the on-off of the load according to a digital quantity output signal output by the main controller;
the monitoring circuit is respectively connected with the MOSFET and the main controller, and is used for monitoring the on-off signal of the MOSFET and feeding back a digital quantity output state feedback signal to the main controller according to the on-off signal of the MOSFET.
Through connecting monitoring circuit between MOSFET and main control unit, monitoring circuit can monitor MOSFET's break-make signal to feed back digital quantity output state feedback signal to main control unit according to MOSFET's break-make signal, thereby main control unit can realize the real-time supervision to MOSFET's output state through monitoring circuit, and then can realize the real-time supervision and the protection to digital quantity output state.
As an optional implementation manner of the embodiment of the present invention, the MOSFET digital output circuit further includes: the input end of the first optical coupling isolation circuit is connected with the monitoring circuit, and the output end of the first optical coupling isolation circuit is connected with the main controller.
The first optical coupling isolation circuit is connected between the monitoring circuit and the main controller, so that electromagnetic interference existing when a digital output state feedback signal is transmitted between the main controller and the MOSFET digital output circuit can be isolated, and the anti-interference performance of the circuit is improved.
As an optional implementation manner of the embodiment of the present invention, the MOSFET digital output circuit further includes: and the input end of the second optical coupling isolation circuit is connected with the main controller, and the output end of the second optical coupling isolation circuit is connected with the MOSFET.
By connecting the second optical coupling isolation circuit between the MOSFET and the main controller, electromagnetic interference existing when a digital output signal is transmitted between the main controller and the MOSFET digital output circuit can be isolated, and the anti-interference performance of the circuit is improved.
As an optional implementation manner of the embodiment of the present invention, the MOSFET digital output circuit further includes: and the input end of the driving circuit is connected with the output end of the second optical coupling isolation circuit, and the output end of the driving circuit is connected with the MOSFET.
Through connect drive circuit between second opto-isolator circuit and MOSFET, drive MOSFET that can be better.
As an optional implementation manner of the embodiment of the present invention, the first optical coupler and the second optical coupler and isolator circuit are integrated in one bidirectional input optical coupler.
Through with first opto-isolator circuit and second opto-isolator circuit integration in a two-way input opto-coupler, can reduce the components and parts quantity in the circuit, reduce the circuit complexity.
As an optional implementation manner of the embodiment of the present invention, the monitoring circuit includes: one end of the first capacitor is connected with the positive input end of the first optical coupling isolation circuit and one end of the first resistor respectively, and the other end of the first resistor is connected with the negative input end of the first optical coupling isolation circuit and the drain electrode of the MOSFET respectively; one end of the second resistor is connected with the other end of the first capacitor, and the other end of the second resistor is connected with the source electrode of the MOSFET; the positive output end of the first optical coupling isolation circuit is connected with the main controller, and the negative output end of the first optical coupling isolation circuit is grounded.
The monitoring circuit is realized through the first capacitor, the first resistor and the second resistor, the on-off detection of the MOSFET can be realized, and the circuit structure is simple.
As an optional implementation manner of the embodiment of the present invention, the monitoring circuit further includes a first bidirectional trigger diode, and the second resistor is connected to the source of the MOSFET through the first bidirectional trigger diode.
The first bidirectional trigger diode is connected between the second resistor and the source electrode of the MOSFET, so that the voltage of the circuit can be stably monitored, and the stability of the circuit is improved.
As an optional implementation manner of the embodiment of the present invention, the driving circuit includes: one end of the third resistor is connected with the second optical coupling isolation circuit, the other end of the third resistor is connected with one end of the fourth resistor and the grid electrode of the IGBT respectively, and the other end of the fourth resistor is connected with the drain electrode of the MOSFET.
The driving circuit realized by the third resistor and the fourth resistor can realize the driving of the MOSFET, and the circuit structure is simple.
As an optional implementation manner of the embodiment of the present invention, two ends of the fourth resistor are connected in parallel to the second bidirectional trigger diode and the second capacitor.
The second bidirectional trigger diode is connected in parallel at two ends of the fourth resistor, so that the effect of stabilizing the voltage between the G pole and the S pole of the MOSFET can be achieved, and the stability of the circuit is improved; the second capacitor is connected in parallel at two ends of the fourth resistor, so that a filtering effect can be achieved, and the anti-interference performance of the circuit is further improved.
As an optional implementation manner of the embodiment of the invention, the MOSFET is an N-channel MOSFET, a source electrode of the MOSFET is connected to a negative electrode of a power supply, a drain electrode of the MOSFET is connected to one end of a load, and the other end of the load is connected to a positive electrode of the power supply; the positive output end of the second optical coupling isolation circuit is connected with the positive pole of the power supply, the negative output end of the second optical coupling isolation circuit is connected with the third resistor, the positive input end of the second optical coupling isolation circuit is connected with the main controller, and the negative input end of the second optical coupling isolation circuit is grounded.
Drawings
Fig. 1 is a schematic structural diagram of a MOSFET digital output circuit according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another MOSFET digital output circuit according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a MOSFET digital output circuit according to an embodiment of the present invention.
Description of reference numerals:
10-MOSFET；
20-a monitoring circuit;
30-a main controller;
40-load;
50-a first opto-isolator circuit;
60-a second opto-isolator circuit;
70-drive circuit.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
At present, the MOSFET is adopted as a digital output circuit of a switching element, and an output state feedback detection circuit is not provided, so that whether the MOSFET is normally switched on or switched off cannot be judged, whether the digital output normally works cannot be judged, and the digital output state cannot be protected in real time.
In view of the above technical problems, embodiments of the present invention provide a MOSFET digital output circuit, which mainly monitors an output state of a MOSFET in real time by adding a monitoring circuit to the MOSFET digital output circuit, determines whether the MOSFET is normally turned on or off, and monitors and protects the digital output state in real time.
The technical scheme of the invention is described in detail in the following with reference to the accompanying drawings. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
Fig. 1 is a schematic structural diagram of a MOSFET digital output circuit according to an embodiment of the present invention, and as shown in fig. 1, the MOSFET digital output circuit according to the embodiment includes: MOSFET10 and monitoring circuit 20; the MOSFET10 is respectively connected with the main controller 30 and the load 40, and the MOSFET10 is used for controlling the on-off of the load 40 according to a digital output signal output by the main controller 30; the monitoring circuit 20 is respectively connected with the MOSFET10 and the main controller 30, and the monitoring circuit 20 is used for monitoring the on-off signal of the MOSFET10 and feeding back a digital quantity output state feedback signal to the main controller 30 according to the on-off signal of the MOSFET 10.
Specifically, the digital output signal output by the main controller 30 includes an on signal and an off signal, and the MOSFET10 can turn on the load 40 according to the on signal and turn off the load 40 according to the off signal. The on signal may be, for example, a high level signal, and the off signal may be, for example, a low level signal.
The MOSFET10 may be an N-channel MOSFET or a P-channel MOSFET.
The on/off signal of the MOSFET10 includes an on signal generated when the MOSFET10 is turned on and an off signal generated when the MOSFET10 is turned off.
The monitoring circuit 20 may feed back a digital output status feedback signal to the main controller 30 when the on signal of the MOSFET10 is monitored; a digital output state feedback signal can also be fed back to the main controller 30 when the turn-off signal of the MOSFET10 is monitored; when the on-off signal of the MOSFET10 is not detected, the digital output state feedback signal may not be fed back to the main controller 30.
The digital output state feedback signals fed back twice by the monitoring circuit 20 may be the same or different.
After the main controller 30 outputs the digital output signal, it can determine whether the MOSFET10 is normally turned on or off according to whether the digital output state feedback signal fed back by the monitoring circuit 20 is received, and further determine whether the digital output is normally operated.
For example: after the main controller 30 outputs the conducting signal, if a digital quantity output state feedback signal fed back by the monitoring circuit 20 is received, it indicates that the monitoring circuit 20 monitors the conducting signal of the MOSFET10, and the main controller 30 determines that the MOSFET10 is normally turned on, and accordingly determines that the digital quantity output normally works; if the digital output state feedback signal fed back by the monitoring circuit 20 is not received, which indicates that the monitoring circuit 20 does not monitor the on signal of the MOSFET10, the main controller 30 determines that the MOSFET10 is turned on abnormally, and thus determines that the digital output operation is abnormal, at this time, the main controller 30 may perform abnormal protection measures, such as: cutting off the power supply, outputting an alarm signal and the like.
Similarly, after the main controller 30 outputs the shutdown signal, if a digital output state feedback signal fed back by the monitoring circuit 20 is received, it is determined that the digital output is normally operated; if the digital output state feedback signal fed back by the monitoring circuit 20 is not received, it is determined that the digital output operation is abnormal.
The main controller 30 is a main control part of a circuit where the MOSFET digital output circuit is located, and may be a single chip, a central processing unit, or a device with processing capability such as a microcomputer.
The MOSFET digital quantity output circuit provided by the embodiment is characterized in that a monitoring circuit is connected between the MOSFET and the main controller, the monitoring circuit can monitor the on-off signal of the MOSFET and feed back the digital quantity output state feedback signal to the main controller according to the on-off signal of the MOSFET, so that the main controller can realize the real-time monitoring of the output state of the MOSFET through the monitoring circuit, and further can realize the real-time monitoring and protection of the digital quantity output state.
Fig. 2 is a schematic structural diagram of another MOSFET digital output circuit according to an embodiment of the present invention, which is a further optimized addition to the embodiment shown in fig. 1. The MOSFET digital output circuit provided by this embodiment further includes: the input end of the first optical coupling isolation circuit 50 is connected with the monitoring circuit 20, and the output end of the first optical coupling isolation circuit 50 is connected with the main controller 30.
Specifically, the first optical coupler and isolator circuit 50 can be implemented by a common transistor output optical coupler, and of course, can also be implemented by other types of optical couplers, and the specific implementation form of this embodiment is not particularly limited as long as the optical coupler and isolator function can be implemented.
The monitoring circuit 20 transmits signals with the main controller 30 through the first optical coupler isolation circuit 50, so that electromagnetic interference existing when digital output state feedback signals are transmitted between the main controller 30 and the MOSFET digital output circuit can be isolated, and the anti-interference performance of the circuit is improved.
Similarly, in order to further improve the anti-interference performance of the circuit, the MOSFET digital output circuit may further include: and the input end of the second optical coupling isolation circuit 60 is connected with the main controller 30, and the output end of the second optical coupling isolation circuit 60 is connected with the MOSFET 10.
The circuit structure and the working principle of the second optical coupler isolation circuit 60 and the first optical coupler isolation circuit 50 are similar, and the difference is that the second optical coupler isolation circuit 60 is used for isolating electromagnetic interference existing when a digital output signal is transmitted between the main controller 30 and the MOSFET digital output circuit.
In order to reduce the number of components in the circuit and reduce the circuit complexity, in this embodiment, the first optical coupler isolation circuit 50 and the second optical coupler isolation circuit 60 are integrated in one bidirectional input optical coupler.
Wherein, the two-way input opto-coupler can select for use various types of two-way input opto-coupler chips, for example: LH1529 and the like, and the specific type thereof is not particularly limited in this embodiment.
In addition, the input end of the bidirectional input optocoupler is not divided into positive and negative, so that the bidirectional input optocoupler can be used for facilitating the connection of circuits.
In this embodiment, for better driving the MOSFET10, the MOSFET digital output circuit may further include: and an input end of the driving circuit 70 is connected with an output end of the second optical coupler isolation circuit 60, and an output end of the driving circuit 70 is connected with the MOSFET 10.
Specifically, the driving circuit 70 may output a driving signal to the MOSFET10 to drive the MOSFET10 to turn on or off according to the digital output signal output from the main controller 30.
The specific circuit structure of the driving circuit 70 can be referred to the driving circuit structure of the conventional MOSFET10, and this embodiment is not particularly limited thereto.
The MOSFET digital quantity output circuit provided by the embodiment can isolate electromagnetic interference between the main controller and the MOSFET digital quantity output circuit and improve the anti-interference performance of the circuit by connecting the first optical coupling isolation circuit between the monitoring circuit and the main controller and connecting the second optical coupling isolation circuit between the MOSFET and the main controller.
Fig. 3 is a schematic circuit diagram of a MOSFET digital output circuit according to an embodiment of the present invention, and as shown in fig. 3, in the MOSFET digital output circuit according to the embodiment, the monitoring circuit 20 includes: the circuit comprises a first capacitor C1, a first resistor R1 and a second resistor R2, wherein one end of the first capacitor C1 is connected with the positive input end of the first optical coupler isolation circuit 50 and one end of the first resistor R1 respectively, and the other end of the first resistor R1 is connected with the negative input end of the first optical coupler isolation circuit 50 and the drain (D pole) of a MOSFET10(Q1) respectively; one end of the second resistor R2 is connected to the other end of the first capacitor C1, and the other end of the second resistor R2 is connected to the source (S-pole) of the MOSFET10 (Q1); the positive output end of the first optical coupling isolation circuit 50 is connected with the main controller 30, and the negative output end of the first optical coupling isolation circuit 50 is grounded.
The monitoring circuit 20 further includes a first diac VR1, and the second resistor R2 is connected to the S-pole of the MOSFET10(Q1) through the first diac VR 1.
The drive circuit 70 includes: one end of the third resistor R3 is connected with the second light-coupling isolation circuit 60, the other end of the third resistor R3 is connected with one end of the fourth resistor R4 and a grid (G pole) of the IGBT respectively, and the other end of the fourth resistor R4 is connected with a D pole of the MOSFET10 (Q1).
The second diode VR2 and the second capacitor C2 are connected in parallel to two ends of the fourth resistor R4.
The MOSFET10(Q1) is an N-channel MOSFET10(Q1), the S pole of the MOSFET10(Q1) is connected with the negative electrode-BAT of a power supply, the D pole of the MOSFET10(Q1) is connected with one end of a Load 40(Load), and the other end of the Load 40(Load) is connected with the positive electrode + BAT of the power supply; the positive output end of the second optical coupling isolation circuit 60 is connected with the positive electrode + BAT of the power supply, the negative output end of the second optical coupling isolation circuit 60 is connected with the third resistor R3, the positive input end of the second optical coupling isolation circuit 60 is connected with the main controller 30, and the negative input end of the second optical coupling isolation circuit 60 is grounded.
The first optical coupler isolation circuit 50 and the second optical coupler isolation circuit 60 are specifically realized by an integrated chip bidirectional input optical coupler D1(LH1529), the input end of the first optical coupler isolation circuit 50 is the 5 and 6 ends of the bidirectional input optical coupler D1, the positive output end is the 3 end of the bidirectional input optical coupler D1, and the negative output end is the 4 end of the bidirectional input optical coupler D1; the input end of the second optical coupler isolation circuit 60 is the 1 and 2 ends of the bidirectional input optical coupler D1, the positive output end is the 8 end of the bidirectional input optical coupler D1, and the negative output end is the 7 end of the bidirectional input optical coupler D1.
Specifically, when the whole circuit is powered on, the voltage between the positive electrode + BAT of the power supply and the negative electrode-BAT of the power supply charges the first capacitor C1 through the Load 40(Load), the first resistor R1, the second resistor R2 and the first bidirectional trigger diode VR1, at the moment, the circuit is powered on just, the charging current is small, the voltage between the 5 end and the 6 end of the bidirectional input optocoupler D1 is low, and the 5 end and the 6 end of the bidirectional input optocoupler D1 are not conducted.
When the digital output signal DO output by the main controller 30 is an on signal (high level signal), the 7 terminal and the 8 terminal of the bidirectional input optocoupler D1 are turned on, and after the voltage between the positive terminal + BAT of the power supply and the negative terminal-BAT of the power supply is divided by the third resistor R3 and the fourth resistor R4, the voltage of the G-pole of the MOSFET10(Q1) is higher than the voltage of the S-pole, so that the MOSFET10(Q1) is turned on. The first capacitor C1, the ends 6 and 5 of the bidirectional input optocoupler D1, the pole D and the pole S of the MOSFET10(Q1), the first diac VR1 and the second resistor R2 form a loop, the first capacitor C1 discharges through the ends 6 and 5 of the bidirectional input optocoupler D1, the pole D and the pole S of the MOSFET10(Q1), the first diac VR1 and the second resistor R2, the ends 6 and 5 of the bidirectional input optocoupler D1 are connected, the main controller 30 receives the digital quantity output state feedback signal LO, and determines that the MOSFET10(Q1) is connected. The pulse width of the digital quantity output state feedback signal LO is positively correlated with the discharge time of the first capacitor C1, and when the discharge of the first capacitor C1 is completed, the 5 end and the 6 end of the bidirectional input optocoupler D1 are disconnected.
If the MOSFET10(Q1) is abnormal and is not turned on after the main controller 30 outputs the on signal, the terminals 6 and 5 of the bidirectional input optocoupler D1 continue to be kept in the off state, and the main controller 30 does not receive the digital output state feedback signal LO, thereby determining that the MOSFET10(Q1) is abnormal in turn-on.
When the digital output signal DO output by the main controller 30 is an off signal (low level signal), the terminals 7 and 8 of the bidirectional input optocoupler D1 are not turned on, the G-voltage and the S-voltage of the MOSFET10(Q1) are both 0, and the MOSFET10(Q1) is turned off. The voltage between the positive electrode of the power supply + BAT and the negative electrode of the power supply-BAT charges a first capacitor C1 through a Load 40(Load), a second resistor R2, a first bidirectional trigger diode VR1 and 5 ends and 6 ends of a bidirectional input optocoupler D1, the 5 ends and 6 ends of the bidirectional input optocoupler D1 are conducted, and the main controller 30 receives a digital quantity output state feedback signal LO and judges that the MOSFET10(Q1) is turned off. The pulse width of the digital quantity output state feedback signal LO is positively correlated with the charging time of the first capacitor C1, and when the first capacitor C1 is charged, the 5 end and the 6 end of the bidirectional input optocoupler D1 are disconnected.
If the MOSFET10(Q1) is abnormal and not turned off after the main controller 30 outputs the turn-off signal, the terminals 6 and 5 of the bidirectional input optocoupler D1 continue to keep the off state, and the main controller 30 does not receive the digital output state feedback signal LO, thereby determining that the MOSFET10(Q1) is abnormal in turn-off.
The first resistor R1 and the second resistor R2 may play a role in limiting current, and the first diac VR1 may play a role in stabilizing and monitoring the voltage of the circuit 20, so as to improve the stability of the circuit; the third resistor R3 and the fourth resistor R4 are voltage dividing resistors and have the function of voltage division; the second bidirectional trigger diode VR2 can stabilize the voltage between the G pole and the S pole of the MOSFET10(Q1), thereby improving the stability of the circuit; the second capacitor C2 can play a role in filtering, thereby improving the anti-interference performance of the circuit.
In addition, the first diac VR1 and the second diac VR2 may also be replaced by a voltage regulator, which is not particularly limited in this embodiment as long as the voltage regulation function can be achieved.
In the above circuit, the MOSFET10(Q1) is exemplified as an N-channel MOSFET, the MOSFET10(Q1) may be a P-channel MOSFET, and the connection relationship between the components may be slightly changed.
In addition, it should be noted that the circuit structure is only an example, and the circuit may further include other devices for improving circuit performance, which is not particularly limited in this embodiment.
The MOSFET digital output circuit provided by the embodiment can realize real-time monitoring of the output state of the MOSFET through the monitoring circuit, and further can realize real-time monitoring and protection of the digital output state, and has a simple circuit structure.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
In addition, in the present invention, unless otherwise explicitly specified or limited, the terms "connected", and the like are to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection; the terms may be directly connected or indirectly connected through an intermediate, and may be used for communicating between two elements or for interacting between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A MOSFET digital output circuit, comprising: a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a monitoring circuit;
the MOSFET is respectively connected with a main controller and a load, and is used for controlling the on-off of the load according to a digital quantity output signal output by the main controller;
the monitoring circuit is respectively connected with the MOSFET and the main controller, and is used for monitoring the on-off signal of the MOSFET and feeding back a digital quantity output state feedback signal to the main controller according to the on-off signal of the MOSFET;
the MOSFET digital output circuit further comprises: the input end of the first optical coupling isolation circuit is connected with the monitoring circuit, and the output end of the first optical coupling isolation circuit is connected with the main controller;
the monitoring circuit includes: one end of the first capacitor is connected with the positive input end of the first optical coupling isolation circuit and one end of the first resistor respectively, and the other end of the first resistor is connected with the negative input end of the first optical coupling isolation circuit and the drain electrode of the MOSFET respectively; one end of the second resistor is connected with the other end of the first capacitor, and the other end of the second resistor is connected with the source electrode of the MOSFET; the positive output end of the first optical coupling isolation circuit is connected with the main controller, and the negative output end of the first optical coupling isolation circuit is grounded.
2. The MOSFET digital output circuit according to claim 1, further comprising: and the input end of the second optical coupling isolation circuit is connected with the main controller, and the output end of the second optical coupling isolation circuit is connected with the MOSFET.
3. The MOSFET digital output circuit according to claim 2, further comprising: and the input end of the driving circuit is connected with the output end of the second optical coupling isolation circuit, and the output end of the driving circuit is connected with the MOSFET.
4. A MOSFET digital quantity output circuit according to claim 2, characterized in that said first optical coupler isolator circuit and said second optical coupler isolator circuit are integrated in one bidirectional input optical coupler.
5. The MOSFET digital output circuit according to claim 1, wherein the monitoring circuit further comprises a first bidirectional trigger diode, and the second resistor is connected to the source of the MOSFET through the first bidirectional trigger diode.
6. The MOSFET digital output circuit according to claim 3, wherein the driving circuit comprises: the IGBT driving circuit comprises a third resistor and a fourth resistor, wherein one end of the third resistor is connected with the second optical coupling isolation circuit, the other end of the third resistor is connected with one end of the fourth resistor and the grid electrode of the IGBT respectively, and the other end of the fourth resistor is connected with the drain electrode of the MOSFET.
7. The MOSFET digital output circuit according to claim 6, wherein a second bidirectional trigger diode and a second capacitor are connected in parallel to both ends of the fourth resistor.
8. The MOSFET digital quantity output circuit according to claim 6 or 7, wherein the MOSFET is an N-channel MOSFET, the source of the MOSFET is connected with the negative electrode of a power supply, the drain of the MOSFET is connected with one end of the load, and the other end of the load is connected with the positive electrode of the power supply; the positive output end of the second optical coupling isolation circuit is connected with the positive pole of a power supply, the negative output end of the second optical coupling isolation circuit is connected with the third resistor, the positive input end of the second optical coupling isolation circuit is connected with the main controller, and the negative input end of the second optical coupling isolation circuit is grounded.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711282985.1A CN107863957B (en) | 2017-12-07 | 2017-12-07 | MOSFET digital quantity output circuit |
| PCT/CN2018/091989 WO2019109623A1 (en) | 2017-12-07 | 2018-06-20 | Mosfet digital-value output circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711282985.1A CN107863957B (en) | 2017-12-07 | 2017-12-07 | MOSFET digital quantity output circuit |
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| CN107863957A CN107863957A (en) | 2018-03-30 |
| CN107863957B true CN107863957B (en) | 2019-12-31 |
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| CN115001585B (en) * | 2022-08-02 | 2022-10-25 | 广东东菱电源科技有限公司 | Transmit-receive integrated isolated communication circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324920A (en) * | 2011-04-13 | 2012-01-18 | 北京卫星制造厂 | Fault isolation electronic switch applicable to direct current power supply system of spacecraft |
| CN103094875A (en) * | 2012-12-26 | 2013-05-08 | 中国航天时代电子公司 | Solid state power controller based on microcontroller |
| CN203504845U (en) * | 2013-10-21 | 2014-03-26 | 上海欧切斯实业有限公司 | Control device capable of realizing AC phase cut by MOSFET |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207265645U (en) * | 2017-10-23 | 2018-04-20 | 北京车和家信息技术有限公司 | A kind of short-circuit protection circuit of driving load |
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2017
- 2017-12-07 CN CN201711282985.1A patent/CN107863957B/en active Active
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2018
- 2018-06-20 WO PCT/CN2018/091989 patent/WO2019109623A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324920A (en) * | 2011-04-13 | 2012-01-18 | 北京卫星制造厂 | Fault isolation electronic switch applicable to direct current power supply system of spacecraft |
| CN103094875A (en) * | 2012-12-26 | 2013-05-08 | 中国航天时代电子公司 | Solid state power controller based on microcontroller |
| CN203504845U (en) * | 2013-10-21 | 2014-03-26 | 上海欧切斯实业有限公司 | Control device capable of realizing AC phase cut by MOSFET |
Also Published As
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|---|---|
| CN107863957A (en) | 2018-03-30 |
| WO2019109623A1 (en) | 2019-06-13 |
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