CN107863577B - BBU capacity repair method and system in memory system - Google Patents
BBU capacity repair method and system in memory system Download PDFInfo
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- CN107863577B CN107863577B CN201711065179.9A CN201711065179A CN107863577B CN 107863577 B CN107863577 B CN 107863577B CN 201711065179 A CN201711065179 A CN 201711065179A CN 107863577 B CN107863577 B CN 107863577B
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000007599 discharging Methods 0.000 claims abstract description 35
- 230000000694 effects Effects 0.000 claims abstract description 21
- 230000000284 resting effect Effects 0.000 claims description 5
- 238000005457 optimization Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/44—Methods for charging or discharging
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0068—Battery or charger load switching, e.g. concurrent charging and load supply
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The application discloses a BBU capacity repair method in a storage system, which comprises the following steps: charging the BBU until the BBU is in a cut-off state to obtain the charged BBU; standing the charged BBU until the battery core activity of the BBU reaches a stable state to obtain a first standing BBU; discharging the BBU subjected to the first standing at a constant current of 800mA until the discharge current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging; standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process; and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU. By the method, the BBU capacity can not jump when the system is powered down, and further, the loss of a user caused by data dump failure when the system is powered down can be avoided. Correspondingly, the BBU capacity repair system in the memory system disclosed by the invention also has the beneficial effects.
Description
Technical Field
The invention relates to the field of computer communication, in particular to a BBU capacity repairing method and system in a storage system.
Background
In the field of data storage, a BBU (Battery Back-up Unit) is often used as a backup power supply of a system, so as to ensure that data in the storage system can be timely dumped onto a hard disk in the power failure process of the system, and further ensure that the data in the system is not lost.
The BBU is composed of lithium batteries and an electronic control circuit, the service life of the lithium batteries depends on the aging degree of the lithium batteries, and the capacity of the BBU often generates a jump phenomenon along with the increase of the service time of the BBU, wherein the phenomenon is caused by high-power discharge of the BBU in the process of using the BBU or power consumption of a chip inside the BBU. Therefore, in the process of actually using the BBU, it appears that the relative charge state of the BBU is not equal to the absolute charge state of the BBU. However, in the prior art, this phenomenon is not adjusted, so that a problem of data storage failure caused by insufficient power supply of the BBU occurs in the use process of the BBU, and how to avoid this problem is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method and a system for BBU capacity repair in a memory system, so as to solve the problem of data dump failure caused by a jump in BBU capacity in the memory system. The specific scheme is as follows:
a BBU capacity repair method in a memory system comprises the following steps:
charging the BBU until the BBU is in a cut-off state to obtain the charged BBU;
standing the charged BBU until the battery core activity of the charged BBU reaches a stable state to obtain a first standing BBU;
discharging the BBU subjected to the first standing at a constant current of 800mA until the discharge current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging;
standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process;
and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU.
Preferably, the process of charging the BBU includes:
writing a control tool I2CCTL of an I2C bus by using C language to obtain an I2CCTL text; wherein, the I2C bus is a way for a memory system to communicate with the BBU;
compiling the I2CCTL text by using a GCC compiler to obtain an executable file I2 CCTL;
and utilizing the executable file I2CCTL and compiling a shell script language to charge the BBU.
Preferably, the process of standing the charged BBU includes:
and standing the charged BBU for 2-5 h.
Preferably, the process of standing the BBU after discharge includes:
and standing the BBU after discharging for 2-5 h.
Preferably, when the read power reading of the BBU after the second standing is the power rating of the BBU, stopping the process of standing the BBU after the second standing, including:
and stopping the BBU standing after the second standing when the electric quantity reading of the BBU after the second standing is read to be 4000 mAh.
Preferably, when the read electric quantity reading of the BBU after the second standing is the electric quantity rating of the BBU, stopping the standing of the BBU after the second standing, and after the process of obtaining the repaired BBU, the method further includes:
and charging the repaired BBU again until the activity of the battery core of the repaired BBU reaches a stable state.
Correspondingly, the invention also discloses a BBU capacity repair system in the memory system, which comprises:
the BBU charging module is used for charging the BBU until the BBU is in a cut-off state, and obtaining the charged BBU;
the first standing module is used for standing the charged BBU until the battery cell activity of the charged BBU reaches a stable state to obtain a first standing BBU;
the BBU discharging module is used for discharging the BBU subjected to the first standing at a constant current of 800mA until the discharging current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging;
the second standing module is used for standing the BBU after discharging to obtain a second standing BBU, and reading the electric quantity reading of the BBU after the second standing in the standing process;
and the BBU repairing module is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, so as to obtain the repaired BBU.
Preferably, the BBU charging module includes:
the text writing unit is used for writing a control tool I2CCTL of the I2C bus by using C language to obtain an I2CCTL text; wherein, the I2C bus is a way for a memory system to communicate with the BBU;
the text compiling unit is used for compiling the I2CCTL text by utilizing a GCC compiler to obtain an executable file I2 CCTL;
and the BBU charging unit is used for utilizing the executable file I2CCTL and compiling a shell script language to charge the BBU.
Preferably, the first resting module comprises:
and the first standing unit is used for standing the charged BBU for 2-5 h.
Preferably, the method further comprises the following steps:
and the BBU optimization module is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, and charging the repaired BBU again after the process of obtaining the repaired BBU is completed until the battery core activity of the repaired BBU reaches a stable state.
In the invention, a BBU capacity repair method in a memory system comprises the following steps: charging the BBU until the BBU is in a cut-off state to obtain the charged BBU; standing the charged BBU until the battery core activity of the charged BBU reaches a stable state to obtain a first standing BBU; discharging the BBU subjected to the first standing at a constant current of 800mA until the discharge current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging; standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process; and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU.
In the invention, the characteristic of the BBU is fully utilized, and the electrode can be fully soaked in the electrolyte and fully activated by charging, discharging and standing the BBU, so that the charging capacity of the BBU can reach the full state again after the battery activity of the BBU is activated, thereby ensuring that the capacity of the BBU does not jump in the power failure process of the system, and further avoiding the loss of a user caused by data dump failure when the system is powered down. Correspondingly, the BBU capacity repair system in the memory system disclosed by the invention also has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a BBU capacity repair method in a memory system according to an embodiment of the present invention;
fig. 2 is a flowchart of a BBU capacity repair method in a memory system according to a second embodiment of the present invention;
fig. 3 is a structural diagram of a BBU capacity repair system in a memory system according to a third embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a BBU capacity repair method in a storage system, as shown in FIG. 1, the method comprises:
step S11: and charging the BBU until the BBU is in a cut-off state to obtain the charged BBU.
Step S12: and standing the charged BBU until the activity of the battery core of the BBU reaches a stable state to obtain a first standing BBU.
In this embodiment, the shell scripting language is used to charge the BBU first until the BBU is in a cut-off state, that is, when the charging current is zero, the BBU is stopped from being charged, and this step is to ensure that the capacity of the BBU is in a full-specification state when the BBU is in a discharging state. And (2) after the BBU is charged, obtaining the charged BBU, and then standing the charged BBU, wherein the purpose of the step is to adjust the charged BBU according to the activity of the battery of the BBU so as to enable internal parameters of the BBU to reach a balanced and stable state, and the standing time of the charged BBU is not limited, and all practical BBU standing can reach a stable state.
Step S13: and discharging the BBU after the first standing at a constant current of 800mA until the discharge current of the BBU after the first standing is zero to obtain the BBU after discharging.
It is understood that the discharging of the BBU after the first still is performed to excite the activity of the battery cell, and it should be noted that the discharging of the BBU after the first still at a constant current of 800mA is performed here because of the parameters of the BBU itself.
Step S14: and standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process.
Step S15: and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU.
It can be understood that the battery charging and discharging and self-adjusting processes are not processes in place in one step, so that the BBU needs to be placed still in the process, so that the BBU is adjusted and tends to be stable, and in the process of placing the BBU after the second standing, the electric quantity reading of the BBU after the second standing in the placing process is read, and when the electric quantity reading of the BBU after the second standing is the electric quantity rated value of the BBU, the placing of the BBU after the second standing is stopped, so as to obtain the repaired BBU.
In the invention, the characteristic of the BBU is fully utilized, and the electrode can be fully soaked in the electrolyte and fully activated by charging, discharging and standing the BBU, so that the charging capacity of the BBU can reach the full state again after the battery activity of the BBU is activated, thereby ensuring that the capacity of the BBU does not jump in the power failure process of the system, and further avoiding the loss of a user caused by data dump failure when the system is powered down.
The second embodiment of the invention discloses a specific BBU capacity repair method in a storage system, and compared with the first embodiment, the second embodiment of the invention further describes and optimizes the technical scheme. As shown in fig. 2, specifically:
step S21: charging the BBU until the BBU is in a cut-off state to obtain the charged BBU;
specifically, step S21 includes step S211, step S212, and step S213;
step S211: writing a control tool I2CCTL of an I2C bus by using C language to obtain an I2CCTL text; the I2C bus is the way that the memory system communicates with the BBU.
Step S212: and compiling the I2CCTL text by using a GCC compiler to obtain an executable file I2 CCTL.
Step S213: and charging the BBU by using the executable file I2CCTL and compiling a shell script language.
In this embodiment, the BBU is charged by using a shell script language, the shell script language is run in a Linux system environment, a communication mode between the system and the BBU is an I2C bus, and an I2C bus control tool I2CCTL generated by C language compilation is used to control data transmission and reception. And charging the BBU to a cut-off state, and stopping charging the BBU, wherein the purpose of the step is to ensure that the capacity of the BBU is in a full state when the BBU is in a discharge state.
Step S22: and standing the charged BBU until the activity of the battery core of the BBU reaches a stable state to obtain a first standing BBU.
It is understood that the purpose of step S22 is to make the BBU after charging adjust according to the activity of its own battery, specifically, in this embodiment, the BBU after charging is left to stand for 2 h-5 h, and the time for which the BBU after charging is left to stand is determined by the actual situation, and is not limited herein.
Step S23: and discharging the BBU after the first standing at a constant current of 800mA until the discharge current of the BBU after the first standing is zero to obtain the BBU after discharging.
Step S24: and standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process.
It is understood that the purpose of step S24 is to make the BBU adjust according to the activity of its own battery, specifically, in this embodiment, the BBU is left to stand for 2 h-5 h, and the time for which the BBU is left to stand is determined by the actual situation, and is not limited herein. In the process, the electric quantity reading of the BBU after the second standing in the standing process is read, so that the parameter change condition of the BBU after the second standing in the standing process can be mastered in real time.
Step S25: and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU.
Specifically, when the electric quantity reading of the BBU after the second standing is read to be 4000mAh, the BBU after the second standing is stopped to stand. It should be noted that, here, only the rated electric quantity value of the BBU in this embodiment is 4000mAh, and certainly, in practical applications, there may be other parameter types of BBUs, and the rated electric quantity parameter of the BBU is not limited here.
Step S26: and charging the repaired BBU again until the activity of the battery core of the repaired BBU reaches a stable state.
It is understood that the purpose of recharging the repaired BBU is to further optimize the charge capacity of the repaired BBU. Of course, the BBU may be charged and discharged many times after the repair, so as to achieve better electric capacity of the BBU, and all that is to achieve the purpose of practical application, and the present disclosure is not limited herein.
Correspondingly, the present invention also discloses a BBU capacity repair system in a memory system, as shown in fig. 3, the system includes:
and the BBU charging module 31 is used for charging the BBU until the BBU is in a cut-off state, so as to obtain the charged BBU.
And the first standing module 32 is used for standing the charged BBU until the activity of the battery cell of the BBU reaches a stable state, so as to obtain a first standing BBU.
And the BBU discharging module 33 is used for discharging the BBU subjected to the first standing at a constant current of 800mA until the discharging current of the BBU subjected to the first standing is zero, so as to obtain the BBU subjected to discharging.
And the second standing module 34 is configured to stand the BBU after discharge to obtain a BBU after the second standing, and read an electric quantity reading of the BBU after the second standing in the standing process.
And the BBU repairing module 35 is configured to stop standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rating of the BBU, so as to obtain the repaired BBU.
Preferably, the BBU charging module 31 includes:
the text writing unit is used for writing a control tool I2CCTL of the I2C bus by using C language to obtain an I2CCTL text; the I2C bus is the way that the memory system communicates with the BBU.
And the text compiling unit is used for compiling the I2CCTL text by utilizing the GCC compiler to obtain an executable file I2 CCTL.
And the BBU charging unit is used for charging the BBU by utilizing the executable file I2CCTL and compiling a shell script language.
Preferably, the first resting module 32 comprises:
and the first standing unit is used for standing the charged BBU for 2-5 h.
Preferably, the second resting module 34 comprises:
and the second standing unit is used for standing the BBU after discharging for 2-5 h.
Preferably, the BBU repair module 35 includes:
and the BBU repairing unit is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be 4000 mAh.
Preferably, the BBU capacity repair system in the memory system further includes:
and the BBU optimization module is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, and charging the repaired BBU again after the process of obtaining the repaired BBU is completed until the battery core activity of the repaired BBU reaches a stable state.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The method and the system for BBU capacity repair in a memory system provided by the present invention are described in detail above, and a specific example is applied in the present disclosure to explain the principle and the implementation of the present invention, and the description of the above embodiment is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A BBU capacity repair method in a memory system is characterized by comprising the following steps:
charging the BBU until the BBU is in a cut-off state to obtain the charged BBU;
standing the charged BBU until the battery core activity of the charged BBU reaches a stable state to obtain a first standing BBU;
discharging the BBU subjected to the first standing at a constant current of 800mA until the discharge current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging;
standing the discharged BBU to obtain a second standing BBU, and reading the electric quantity reading of the second standing BBU in the standing process;
and when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, stopping standing the BBU after the second standing to obtain the repaired BBU.
2. The method of claim 1, wherein the process of charging the BBU comprises:
writing a control tool I2CCTL of an I2C bus by using C language to obtain an I2CCTL text; wherein, the I2C bus is a way for a memory system to communicate with the BBU;
compiling the I2CCTL text by using a GCC compiler to obtain an executable file I2 CCTL;
and utilizing the executable file I2CCTL and compiling a shell script language to charge the BBU.
3. The method of claim 1, wherein the process of resting the charged BBU comprises:
and standing the charged BBU for 2-5 h.
4. The method of claim 1, wherein the process of standing the BBU after discharge comprises:
and standing the BBU after discharging for 2-5 h.
5. The method of claim 1, wherein the process of stopping the standing of the second post-static BBU when the charge reading of the second post-static BBU is the charge rating of the BBU comprises:
and stopping the BBU standing after the second standing when the electric quantity reading of the BBU after the second standing is read to be 4000 mAh.
6. The method according to any one of claims 1 to 5, wherein the step of stopping the standing of the second post-standing BBU when the power reading of the second post-standing BBU is the power rating of the BBU is read, and after the step of obtaining the repaired BBU, further comprises:
and charging the repaired BBU again until the activity of the battery core of the repaired BBU reaches a stable state.
7. A BBU capacity repair system in a memory system, comprising:
the BBU charging module is used for charging the BBU until the BBU is in a cut-off state, and obtaining the charged BBU;
the first standing module is used for standing the charged BBU until the battery cell activity of the charged BBU reaches a stable state to obtain a first standing BBU;
the BBU discharging module is used for discharging the BBU subjected to the first standing at a constant current of 800mA until the discharging current of the BBU subjected to the first standing is zero to obtain a BBU subjected to discharging;
the second standing module is used for standing the BBU after discharging to obtain a second standing BBU, and reading the electric quantity reading of the BBU after the second standing in the standing process;
and the BBU repairing module is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, so as to obtain the repaired BBU.
8. The system of claim 7, wherein the BBU charging module comprises:
the text writing unit is used for writing a control tool I2CCTL of the I2C bus by using C language to obtain an I2CCTL text; wherein, the I2C bus is a way for a memory system to communicate with the BBU;
the text compiling unit is used for compiling the I2CCTL text by utilizing a GCC compiler to obtain an executable file I2 CCTL;
and the BBU charging unit is used for utilizing the executable file I2CCTL and compiling a shell script language to charge the BBU.
9. The system of claim 7, wherein the first resting module comprises:
and the first standing unit is used for standing the charged BBU for 2-5 h.
10. The system of any one of claims 7 to 9, further comprising:
and the BBU optimization module is used for stopping standing the BBU after the second standing when the electric quantity reading of the BBU after the second standing is read to be the electric quantity rated value of the BBU, and charging the repaired BBU again after the process of obtaining the repaired BBU is completed until the battery core activity of the repaired BBU reaches a stable state.
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| CN103579690B (en) * | 2012-07-24 | 2015-10-07 | 南京捷翔能源科技有限公司 | A kind of accumulator repairing system and restorative procedure thereof that can realize Long-distance Control |
| CN105811487B (en) * | 2014-12-31 | 2020-09-29 | 中兴通讯股份有限公司 | Battery pack, and automatic battery pack capacity calibration learning method and system |
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