CN107846137B - Current limiting method and device for semiconductor switch component - Google Patents
Current limiting method and device for semiconductor switch component Download PDFInfo
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- CN107846137B CN107846137B CN201610831899.0A CN201610831899A CN107846137B CN 107846137 B CN107846137 B CN 107846137B CN 201610831899 A CN201610831899 A CN 201610831899A CN 107846137 B CN107846137 B CN 107846137B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Abstract
A method and equipment for limiting current of semiconductor switch element features that the first reference level in normal wave generating state is lower than the second reference level in wave-by-wave current limiting state, and the action point of normal wave generating state in wave-by-wave current limiting state is advanced to prevent the actual current from exceeding the maximum current required by specification.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a current limiting method and device for a semiconductor switch component.
Background
In practical applications of semiconductor switching devices such as IGBTs (Insulated Gate Bipolar transistors), it is an important problem to prevent overcurrent damage. The prior art often adopts the wave-by-wave current limiting control added in the driving circuit to prevent the occurrence of the overcurrent condition.
The wave-by-wave current limiting control is realized by a wave-by-wave current limiting circuit, the wave-by-wave current limiting circuit detects a current signal flowing through a semiconductor switch component, converts the current signal into a detection voltage through a Hall element and an operational amplifier, and compares the detection voltage with a reference level (which can be set according to the maximum current required by the specification of the semiconductor switch component). When an overcurrent signal (the detection voltage is higher than the reference level) occurs, the drive signal of the semiconductor switch component is immediately blocked, and the semiconductor switch component enters a wave-by-wave current limiting state; when the overcurrent disappears and the driving signal rises again, the driving signal returns to a normal wave-generating state and the circuit outputs a normal driving signal.
However, there is a delay in the conversion of the current signal by the hall element and the operational amplifier, and the larger the increment of the current signal, the longer the delay; therefore, when the driving circuit enters the wave-by-wave current limiting state from the normal wave generating state, the initial value of the current is low, the increment is large, so that the conversion delay of the current signal is long, and the action point (the time point when the detection voltage is equal to the reference level) of the driving circuit entering the wave-by-wave current limiting state is delayed seriously, so that the actual current flowing through the semiconductor switch component at the action point greatly exceeds the maximum current required by the specification, and the semiconductor switch component is easy to be damaged by overcurrent. For example, taking a driving circuit of an IGBT as an example, assuming that the maximum current required by the specification of the IGBT is 110 amperes, when a reference level is set to 110R (the resistance value of the set resistor R is set according to actual conditions) volts according to the maximum current required by the specification, when it is determined that the detected voltage is equal to the reference level, the actual current flowing through the IGBT has reached 141 amperes, and the IGBT is easily over-current damaged.
Disclosure of Invention
The embodiment of the invention provides a current limiting method and device for a semiconductor switch component, which are used for solving the problem that the semiconductor switch component is easy to overcurrent and damage due to the fact that the action point of a driving circuit entering a wave-by-wave current limiting state from a normal wave generating state is seriously lagged in the existing wave-by-wave current limiting method.
The embodiment of the invention provides a current limiting method of a semiconductor switch component, which comprises the following steps:
acquiring detection voltage for reflecting the magnitude of current flowing through a semiconductor switch component aiming at any switching period;
comparing the acquired detection voltage with a reference level, and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component and setting the reference level to be a second set level; or the like, or, alternatively,
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
Correspondingly, an embodiment of the present invention further provides an apparatus, including:
the detection unit is used for acquiring detection voltage for reflecting the magnitude of current flowing through the semiconductor switch component aiming at any switching period;
a control unit for comparing the acquired detection voltage with a reference level and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component and setting the reference level to be a second set level; or the like, or, alternatively,
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
The invention has the following beneficial effects:
the embodiment of the invention provides a current limiting method and device of a semiconductor switch component, which can obtain detection voltage for reflecting the magnitude of current flowing through the semiconductor switch component aiming at any switching period; and comparing the acquired detection voltage with a reference level, and performing the following operations: if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component; or, when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking the normal driving signal provided to the semiconductor switch component and setting the reference level to be a second set level; or if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping to block the normal driving signal provided for the semiconductor switch component; or when the reference level is determined to be a second set level and the detection voltage is less than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level; wherein the first set level is less than the second set level. That is to say, the first set level of the reference level of the normal wave sending state is set to be smaller than the second set level of the reference level of the wave-by-wave current limiting state, and the action point of the normal wave sending state entering the wave-by-wave current limiting state is advanced, so that the situation that the semiconductor switch component is damaged due to overcurrent caused by the fact that the actual current flowing through the semiconductor switch component at the action point exceeds the maximum current required by the specification can be avoided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without inventive efforts.
Fig. 1 is a flowchart illustrating a method for limiting a current of a semiconductor switching device according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a current limiting device of a semiconductor switching device according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the embodiment of the invention provides a current limiting method of a semiconductor switch component, which is characterized in that two reference levels are set on the basis of the existing wave-by-wave current limiting method, and the reference level in a normal wave-emitting state is smaller than the reference level in a wave-by-wave current limiting state, so that the problem that the semiconductor switch component is easy to overcurrent and damage due to the serious delay of an action point of a driving circuit from the normal wave-emitting state to the wave-by-wave current limiting state is solved. Specifically, as shown in fig. 1, which is a flowchart illustrating steps of the method according to the first embodiment of the present invention, the method may include the following steps:
step 101: acquiring detection voltage for reflecting the magnitude of current flowing through a semiconductor switch component aiming at any switching period;
step 102: comparing the acquired detection voltage with a reference level, and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping to provide a normal driving signal for the semiconductor switch component, namely keeping a normal wave generation state; or the like, or, alternatively,
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component (optionally, a low level can be provided for the semiconductor switch component), namely, entering a wave-by-wave current limiting state, and setting the reference level to be a second set level; or the like, or, alternatively,
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component, namely keeping a wave-by-wave current limiting state; or the like, or, alternatively,
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal to the semiconductor switch component, namely entering a normal wave generation state, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
That is to say, the first set level of the reference level in the normal wave generating state is set to be smaller than the second set level of the reference level in the wave-by-wave current limiting state, and the action point of the driving circuit of the semiconductor switch component entering the wave-by-wave current limiting state from the normal wave generating state is advanced, so that the situation that the actual current flowing through the semiconductor switch component at the action point exceeds the maximum current required by the specification to cause overcurrent damage of the semiconductor switch component can be avoided.
Alternatively, for any switching cycle, the operations of steps 101 to 102 may be performed only within a set operating period of the switching cycle. For example, for the drive circuit of the IGBT, the operations in step 101 to step 102 may be performed only when the drive signal has a rising edge and the IGBT is in an operating state, and details thereof are not repeated here.
Optionally, the setting the reference level as a first setting level may specifically include controlling the digital signal processor to output a first square wave signal with a frequency of a first setting frequency, an amplitude of a first setting amplitude, and a duty ratio of a first setting duty ratio; correspondingly, setting the reference level to be a second set level may specifically include controlling the digital signal processor to output a second square wave signal with a second set frequency, a second set amplitude and a second set duty cycle; and the level signal obtained by filtering the output signal of the digital signal processor is a reference level.
That is, the reference level can be generated (set) by controlling the digital signal processor and the filter, specifically, the signal modulator function of the digital signal processor can be used to generate a square wave signal with a set frequency, a set amplitude and a set duty ratio, and the square wave signal is filtered by the filter to generate a level signal with a stable amplitude as the reference level. The amplitude of the level signal is equal to the product of the set amplitude and the set duty ratio of the square wave signal, so that the first set frequency and the second set frequency can be equal or different, and preferably the first set frequency is equal to the second set frequency; the first set amplitude and the second set amplitude may be equal to or different from each other, the first set duty cycle and the second set duty cycle may be equal to or different from each other, and only the product of the first set amplitude and the first set duty cycle is equal to the first set level, and the product of the second set amplitude and the second set duty cycle is equal to the second set level.
Preferably, the first set amplitude is equal to the second set amplitude, a product of the first set amplitude and the first set duty ratio is equal to the first set level, and a product of the second set amplitude and the second set duty ratio is equal to the second set level. It should be noted that the reference level may be generated by using the above-mentioned Modulation and demodulation method of PWM (Pulse width Modulation), or may be generated by using Modulation and demodulation methods of AM (Amplitude Modulation) and FM (Frequency Modulation), which are not described herein again.
Further alternatively, a resistance weighting circuit may be employed, and the reference level is generated (set) by changing a port voltage of the resistance weighting circuit. Specifically, a set number (for example, 3) of I/O ports of the digital signal processor may be respectively connected to a set number of resistors (the resistance values of the resistors may be flexibly set according to actual needs), a node obtained by connecting the other ends of the resistors may be used as a port of the resistor weighting circuit, a port voltage may be used as a reference level, and the amplitude of the port voltage of the resistor weighting circuit may be controlled by controlling the amplitude of the output signal of each I/O port; therefore, the reference level can be set by controlling the output signal of each I/O port, the realization cost of the method is low, and the generation speed of the reference level is high.
In addition, the reference level may also be generated (set) by directly adopting a digital-to-analog conversion manner, for example, the digital signal processor may be controlled to output a digital signal corresponding to the first set level, and then the digital signal is converted into a level signal with the same amplitude as the first set level as the reference level by the digital-to-analog conversion circuit. The reference level generated by the method has high precision and high generation speed, and compared with a resistance weighting circuit, the reference level can flexibly generate level signals of various amplitudes.
Optionally, the method may further comprise:
and determining the initial reference level of the semiconductor switch component as a first set level.
That is, when the driving circuit of the semiconductor switching device starts to operate, the current signal flowing through the semiconductor switching device will increase from a very small initial value (e.g., 0 a), which will cause the delay of the operating point of the driving circuit from the normal wave generating state to the wave-by-wave current limiting state to be the most serious; therefore, before the driving circuit works, the initial reference level of the semiconductor switching element is set as the first set level, and the action point of the driving circuit entering the wave-by-wave current limiting state from the normal wave generating state for the first time is advanced, so that the overcurrent damage of the semiconductor switching element is further prevented. For example, taking the PWM modulation and demodulation method as an example to generate the reference level, before the driving circuit operates, the digital signal processor may be first controlled to output the first square wave signal with the first set frequency, the first set amplitude and the first set duty ratio, so that the amplitude of the level signal output by the filter is equal to the amplitude of the first set level.
Optionally, the obtaining a detection voltage for reflecting the magnitude of the current flowing through the semiconductor switching element may specifically include:
detecting a current signal flowing through the semiconductor switching element;
and converting the current signal into a detection voltage through a Hall element and an operational amplifier.
Further optionally, the second set level is equal to a product of a maximum current required by specifications of the semiconductor switch component and a set resistance value (which can be flexibly set according to actual conditions);
the first setting level is equal to the difference between the second setting level and a first setting voltage value (which can be flexibly set according to actual conditions).
The method provided in this embodiment is to avoid that the current value of the current signal flowing through the semiconductor switching device is much larger than the maximum current required by the specification of the semiconductor switching device, so that the detection voltage is substantially used to represent the magnitude of the current signal flowing through the semiconductor switching device, and the magnitude of the second setting level can be determined by the maximum current required by the specification of the semiconductor switching device; further, when the drive circuit is in the wave-by-wave current limiting state, the detection voltage is compared with the second set level, and the current signal flowing through the semiconductor switching element is substantially compared with the maximum current required by the specification of the semiconductor switching element, so as to ensure that the current signal flowing through the semiconductor switching element is not greater than the maximum current required by the specification of the semiconductor switching element, similarly to the prior art.
However, when the driving circuit is in a normal wave-generating state, because the switching delay of the hall element and the operational amplifier to the current signal is large, when the current signal flowing through the semiconductor switch element is increased to the maximum current required by the specification of the semiconductor switch element, the detection voltage is not increased to the second set level yet, and the action point of the driving circuit entering the wave-by-wave current-limiting state is delayed seriously. Therefore, when the driving circuit is in a normal wave generation state, the reference level can be set to be a first set level which is smaller than the second set level, and the magnitude of the first set level can be an appropriate level value determined according to a plurality of test results, so that the action point of the normal wave generation state entering the wave-by-wave current limiting state is advanced, and overcurrent damage of semiconductor switch components is avoided.
Optionally, the method may further comprise:
acquiring the voltage of a direct current end of the semiconductor switch component;
and if the direct-current voltage is determined to be not smaller than a second set voltage value within the set time, determining the difference value between the first set level and a third set voltage value as a new first set level, and/or determining the difference value between the second set level and a fourth set voltage value as a new second set level.
That is, the reference level can be appropriately corrected in consideration of fluctuations in the bus voltage (i.e., the dc voltage of the semiconductor switching element). When the bus voltage is increased, the amplitude of the first set level and/or the second set level can be properly reduced so as to improve the safety factor of the semiconductor switch component; when the bus voltage is decreased, the amplitude of the first setting level and/or the second setting level can be properly increased to ensure the normal operation of the semiconductor switch device, which is not described herein again.
The method will be described in detail below by taking the driving circuit of the IGBT as an example. Assuming that the maximum current required by the specification of the IGBT is 110 a, the second set level may be set to 110R (the resistance value of the set resistor R is set according to actual conditions) volts, and the first set level may be set to 60R volts, and the detailed steps of the current limiting method may be as follows:
step 1: setting the initial reference level of the IGBT to be 60R volts;
step 2: acquiring detection voltage for reflecting the magnitude of current flowing through the IGBT;
and step 3: comparing the acquired detection voltage with a reference level, and performing the following operations:
if the reference level is determined to be 60R volts and the detection voltage is less than 60R volts, providing a normal driving signal for the IGBT and keeping a normal wave generation state; or the like, or, alternatively,
when the reference level is determined to be 60R volts and the detection voltage is not less than 60R volts, blocking the normal driving signal provided for the IGBT, entering a wave-by-wave current limiting state, and setting the reference level to be 110R volts; or the like, or, alternatively,
if the reference level is determined to be 110R volts and the detection voltage is not less than 110R volts, blocking the normal driving signal provided for the IGBT and keeping the wave-by-wave current limiting state; or the like, or, alternatively,
when the reference level is determined to be 110R volts and the detection voltage is less than 110R volts, providing a normal driving signal for the IGBT, entering a normal wave generation state and setting the reference level to be 60R volts;
and 4, step 4: when the rising edge of the driving signal comes, jump to step 2.
The result of the actual operation shows that by performing the above steps, the maximum value of the actual current flowing through the IGBT can be controlled to 111 amperes; in the prior art, a reference level is set to be 110R, and the maximum value of the actual current flowing through the IGBT is 141A; namely, by adopting the current limiting method provided by the embodiment of the invention, the maximum value of the actual current flowing through the IGBT is reduced by 30 amperes, so that the risk of overcurrent damage of the IGBT can be reduced by the method provided by the embodiment of the invention.
In summary, the current limiting method for the semiconductor switching device according to the embodiment of the present invention can obtain the detection voltage for reflecting the magnitude of the current flowing through the semiconductor switching device for any switching period; and comparing the acquired detection voltage with a reference level, and performing the following operations: if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component; or, when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking the normal driving signal provided to the semiconductor switch component and setting the reference level to be a second set level; or if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping to block the normal driving signal provided for the semiconductor switch component; or when the reference level is determined to be a second set level and the detection voltage is less than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level; wherein the first set level is less than the second set level. That is, the first setting level of the reference level of the normal wave-sending state) is set to be smaller than the second setting level of the reference level of the wave-by-wave current-limiting state, so that the action point of the normal wave-sending state entering the wave-by-wave current-limiting state is advanced, and the condition that the semiconductor switch component is over-current damaged due to the fact that the actual current flowing through the semiconductor switch component at the action point exceeds the maximum current required by the specification can be avoided.
Example two:
based on the same inventive concept, the second embodiment of the present invention provides a current limiting device for a semiconductor switching device, which can be integrated in a driving circuit of the semiconductor switching device. Specifically, as shown in fig. 2, which is a schematic structural diagram of the apparatus in the second embodiment of the present invention, the apparatus may include:
a detection unit 201, configured to acquire a detection voltage for reflecting a magnitude of a current flowing through the semiconductor switching element for any switching period;
a control unit 202 for comparing the acquired detection voltage with a reference level, and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component and setting the reference level to be a second set level; or the like, or, alternatively,
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component; or the like, or, alternatively,
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
That is to say, the current limiting device for a semiconductor switching element provided in the embodiment of the present invention can advance the action point of the normal wave generation state entering the wave-by-wave current limiting state by setting the first set level of the reference level of the normal wave generation state to be less than the second set level of the reference level of the wave-by-wave current limiting state, so as to avoid the occurrence of overcurrent damage of the semiconductor switching element due to the fact that the actual current flowing through the semiconductor switching element at the action point already exceeds the maximum current required by the specification.
Optionally, the control unit 202 may be configured to set the reference level to the first setting level by: controlling the digital signal processor to output a first square wave signal with a first set frequency, a first set amplitude and a first set duty ratio; accordingly, the control unit 202 is further configured to set the reference level to the second setting level by: controlling the digital signal processor to output a second square wave signal with a second set frequency, a second set amplitude and a second set duty ratio; and the level signal obtained by filtering the output signal of the digital signal processor is a reference level.
Optionally, the control unit 202 may be further configured to determine that the initial reference level of the semiconductor switch device is a first set level.
That is, when the driving circuit of the semiconductor switching device starts to operate, the current signal flowing through the semiconductor switching device will increase from a very small initial value (e.g., 0 a), which will cause the delay of the operating point of the driving circuit from the normal wave generating state to the wave-by-wave current limiting state to be the most serious; therefore, before the driving circuit works, the initial reference level of the semiconductor switching element is set as the first set level, and the action point of the driving circuit entering the wave-by-wave current limiting state from the normal wave generating state for the first time is advanced, so that the overcurrent damage of the semiconductor switching element is further prevented.
Optionally, the detection unit 201 may be specifically configured to detect a current signal flowing through the semiconductor switching element; and converting the current signal into a detection voltage through a Hall element and an operational amplifier.
Further optionally, the second set level is equal to a product of a maximum current required by specifications of the semiconductor switch component and a set resistance value (which can be flexibly set according to actual conditions); and
the first setting level is equal to the difference between the second setting level and a first setting voltage value (which can be flexibly set according to actual conditions).
Optionally, the apparatus may further include a regulating unit (not shown in fig. 2) for obtaining a dc terminal voltage of the semiconductor switching device; and if the direct-current voltage is determined to be not smaller than a second set voltage value within the set time, determining the difference value between the first set level and a third set voltage value as a new first set level, and/or determining the difference value between the second set level and a fourth set voltage value as a new second set level.
Furthermore, it is to be understood that any number of elements in the figures and descriptions are to be regarded as illustrative rather than restrictive, and that any nomenclature is used for distinction and not intended to be limiting.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus (device), or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention has been described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (devices) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method of limiting current in a semiconductor switching device, the method comprising:
acquiring detection voltage for reflecting the magnitude of current flowing through a semiconductor switch component aiming at any switching period;
comparing the acquired detection voltage with a reference level, and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component;
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component and setting the reference level to be a second set level;
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component;
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
2. The method of claim 1,
the setting reference level is a first setting level and comprises a first square wave signal for controlling the output frequency of the digital signal processor to be a first setting frequency, the amplitude to be a first setting amplitude and the duty ratio to be a first setting duty ratio;
setting the reference level as a second set level, wherein the setting comprises controlling the digital signal processor to output a second square wave signal with a second set frequency, a second set amplitude and a second set duty ratio;
and the level signal obtained by filtering the output signal of the digital signal processor is a reference level.
3. The method of claim 1, wherein the method further comprises:
and determining the initial reference level of the semiconductor switch component as a first set level.
4. The method of claim 1,
the second set level is equal to the product of the maximum current required by the specification of the semiconductor switch component and the set resistance value of the resistor;
the first setting level is equal to the difference between the second setting level and a first setting voltage value.
5. The method of claim 1, wherein the method further comprises:
acquiring the voltage of a direct current end of the semiconductor switch component;
and if the direct-current voltage is determined to be not smaller than a second set voltage value within the set time, determining the difference value between the first set level and a third set voltage value as a new first set level, and/or determining the difference value between the second set level and a fourth set voltage value as a new second set level.
6. A current limiting apparatus for a semiconductor switching device, the apparatus comprising:
the detection unit is used for acquiring detection voltage for reflecting the magnitude of current flowing through the semiconductor switch component aiming at any switching period;
a control unit for comparing the acquired detection voltage with a reference level and performing the following operations:
if the reference level is determined to be a first set level and the detection voltage is less than the first set level, keeping providing a normal driving signal for the semiconductor switch component;
when the reference level is determined to be a first set level and the detection voltage is not less than the first set level, blocking a normal driving signal provided for the semiconductor switch component and setting the reference level to be a second set level;
if the reference level is determined to be a second set level and the detection voltage is not less than the second set level, keeping blocking the normal driving signal provided for the semiconductor switch component;
when the reference level is determined to be a second set level and the detection voltage is smaller than the second set level, providing a normal driving signal for the semiconductor switch component, and setting the reference level to be a first set level;
wherein the first set level is less than the second set level.
7. The apparatus of claim 6,
the control unit is used for setting the reference level as a first set level by the following method: controlling the digital signal processor to output a first square wave signal with a first set frequency, a first set amplitude and a first set duty ratio;
the control unit is further configured to set the reference level to a second set level by: controlling the digital signal processor to output a second square wave signal with a second set frequency, a second set amplitude and a second set duty ratio;
and the level signal obtained by filtering the output signal of the digital signal processor is a reference level.
8. The apparatus of claim 6,
the control unit is further used for determining that the initial reference level of the semiconductor switch component is a first set level.
9. The apparatus of claim 6,
the second set level is equal to the product of the maximum current required by the specification of the semiconductor switch component and the set resistance value of the resistor;
the first setting level is equal to the difference between the second setting level and a first setting voltage value.
10. The apparatus according to claim 6, further comprising a regulating unit for obtaining a dc terminal voltage of the semiconductor switching device; and if the direct-current voltage is determined to be not smaller than a second set voltage value within the set time, determining the difference value between the first set level and a third set voltage value as a new first set level, and/or determining the difference value between the second set level and a fourth set voltage value as a new second set level.
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| US5629610A (en) * | 1994-05-06 | 1997-05-13 | Sgs-Thomson Microelectronics S.R.L. | Dual threshold current mode digital PWM controller |
| CN102364856B (en) * | 2011-06-30 | 2013-10-16 | 成都芯源系统有限公司 | Switching power supply and no-load control circuit and control method thereof |
| CN103618437A (en) * | 2013-11-26 | 2014-03-05 | 苏州贝克微电子有限公司 | Control circuit enabling switch voltage stabilization circuit to keep high efficiency within wide current range |
| WO2015146041A1 (en) * | 2014-03-27 | 2015-10-01 | 株式会社デンソー | Drive device |
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| US10270337B2 (en) * | 2015-05-25 | 2019-04-23 | Apple Inc. | Dynamic integration based current limiting for power converters |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629610A (en) * | 1994-05-06 | 1997-05-13 | Sgs-Thomson Microelectronics S.R.L. | Dual threshold current mode digital PWM controller |
| CN102364856B (en) * | 2011-06-30 | 2013-10-16 | 成都芯源系统有限公司 | Switching power supply and no-load control circuit and control method thereof |
| CN103618437A (en) * | 2013-11-26 | 2014-03-05 | 苏州贝克微电子有限公司 | Control circuit enabling switch voltage stabilization circuit to keep high efficiency within wide current range |
| WO2015146041A1 (en) * | 2014-03-27 | 2015-10-01 | 株式会社デンソー | Drive device |
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