CN107835014A - A kind of rf broadband frequency agility frequency source - Google Patents
A kind of rf broadband frequency agility frequency source Download PDFInfo
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- CN107835014A CN107835014A CN201711013425.6A CN201711013425A CN107835014A CN 107835014 A CN107835014 A CN 107835014A CN 201711013425 A CN201711013425 A CN 201711013425A CN 107835014 A CN107835014 A CN 107835014A
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- 238000013519 translation Methods 0.000 claims abstract description 30
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- 239000011229 interlayer Substances 0.000 claims description 24
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- 230000005540 biological transmission Effects 0.000 claims description 8
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
- H03L7/183—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number
- H03L7/187—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number using means for coarse tuning the voltage controlled oscillator of the loop
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Abstract
This application discloses a kind of rf broadband frequency agility frequency source, includes frequency reference module, baseband module, local oscillator module, frequency translation module；The frequency reference module, for exporting 1000MHz reference signals to the baseband module, exporting 1000MHz pumping signals to the local oscillator module；The baseband module, for exporting 200MHz~400MHz baseband signals to the frequency translation module；The local oscillator module, for being 10GHz~20GHz to the frequency translation module reference frequency output and six point-frequency signals that frequency interval is 2GHz；The frequency translation module, for 200MHz~400MHz baseband signals to be carried out into frequency expansion, output signal frequency is set to cover 1.25 20GHz.The solution of the present invention is more preferable than legacy frequencies source index, and physical dimension is smaller.
Description
Technical field
The application is related to microwave technical field, more particularly to a kind of rf frequency source.
Background technology
Important component of the frequency source as electronic system, in communication, electronic warfare, radar detection, guidance and control, leads
Boat and positioning, measure and be used widely with testing etc. in technical field, in addition to ground installation, its application environment cover guided missile,
Numerous particular applications such as satellite, aircraft, space.With various new and high technologies such as micro-nano satellite, light-duty unmanned plane, miniature block
The continuous development of the advanced technologies such as bullet, high-effect space equipment is cut, the miniaturization to frequency source, which is even miniaturized, requires increasingly prominent
Go out, its volume, weight, power consumption etc. have turned into limits the bottleneck that technology of new generation plays one's part to the full, it is necessary to technological innovation is carried out,
With the payload proportion of the armament systems such as effective lifting of missile, satellite, aircraft, space equipment.
Traditional circuit design and technique implementation, had difficulty in taking a step when carrying out Miniaturization Design, it is tight in size requirement
Severe occasion, it has to using sacrifice circuit performance as cost.But frequency source is the heart of the electronic systems such as radar, communication, instrument,
The function of many modern electronic equipments and system realizes the performance for all depending directly on frequency source used, therefore in the same of miniaturization
When to have high performance requirement concurrently.
The content of the invention
To solve rf broadband frequency agility frequency source with miniaturization, high performance problem, the present invention proposes a kind of new
Rf broadband frequency agility frequency source.
The embodiment of the present invention provides a kind of rf broadband frequency agility frequency source, includes frequency reference module, baseband module, sheet
Shake module, frequency translation module；The frequency reference module, for the baseband module export 1000MHz reference signals, to
The local oscillator module exports 1000MHz pumping signals；The baseband module, for the frequency translation module output 200~
400MHz baseband signals；The local oscillator module, for sent to the frequency translation module frequency of low phase noise 10~
In the range of 20GHz and frequency interval be 2GHz 6 point-frequency signals in any one as local oscillation signal；The frequency transformation
Module, for baseband signal to be carried out into frequency expansion, output signal frequency is set to be in the range of 1.25~20GHz.
Further, the embodiment of the present invention also provides a kind of rf broadband frequency agility frequency source, comprising output module, is used for
The output signal of the frequency translation module is filtered, amplified, is decayed, arteries and veins is adjusted.The reality further optimized as the present invention
Apply example, the output module further comprising second switch wave filter group, the second amplifier, electrically controlled attenuator, numerical-control attenuator,
Arteries and veins adjusts device；The frequency translation module output signal adjusts decay by the second switch wave filter group, the second amplifier, electricity
Device, numerical-control attenuator, arteries and veins adjust device processing；The second switch wave filter group is used to remove harmonic wave；The electrically controlled attenuator sum
Control attenuator is respectively used to carry out fine tuning and coarse adjustment to signal power；The arteries and veins adjusts device to carry out impulse modulation to output signal.
Further optimally, in rf broadband frequency agility frequency source of the invention, the frequency reference module includes crystal
Oscillator, 10 frequency multipliers, the first frequency mixer, the first loop filter, sound surface wave pressure control oscillator；The crystal oscillator is used
In producing 100MHz signals, 1000MHz signals are generated after 10 frequency multipliers, the first frequency mixer is delivered to and surface acoustic wave is voltage-controlled shakes
The 1000MHz signals for swinging device output carry out phase demodulation, then form voltage-controlled voltage by the first loop filter, act on the sound table
Face wave pressure controlled oscillator.
Further optimally, in rf broadband frequency agility frequency source of the invention, the baseband module include 3 frequency multipliers,
DDS chips；The reference signal is after 3 frequency multipliers, after the processing of DDS chips, generates the baseband signal.
Further optimally, in rf broadband frequency agility frequency source of the invention, the local oscillator module include 2 frequency multipliers,
Harmonic oscillator, bandpass filter, the first amplifier, first switch wave filter group；The 1000MHz pumping signals pass through 2 times
After frequency device, 2000MHz signals are generated, via harmonic oscillator generation frequency in the range of 10~20GHz, at intervals of the 6 of 2GHz
Any one in individual point-frequency signal, described is generated after bandpass filter, the first amplifier, first switch wave filter group
Shake signal.
Further optimally, in rf broadband frequency agility frequency source of the invention, the frequency translation module further wraps
Containing phase discriminator, the second loop filter, voltage controlled oscillator, power splitter, the second frequency mixer, variable frequency divider；Second mixing
Device, for the output signal of the local oscillation signal and the voltage controlled oscillator to be mixed；The phase discriminator, for by described in
Signal and the baseband signal after mixing carry out phase demodulation, deliver to the second loop filter and form voltage-controlled voltage；Second loop is filtered
Ripple device includes that voltage is preset and clamp circuit, for limiting the scope of voltage-controlled voltage；Second loop filter output voltage
For controlling the stable 10~20GHz signals of the voltage controlled oscillator output, the output signal of voltage controlled oscillator is again by variable
Frequency divider 1/2/4/8 is in the range of 1.25~20GHz after dividing.
Further optimally, rf broadband frequency agility frequency source described in any one embodiment of the present invention, makes full use of more
Layer solid space, realize the high-density circuit of three-dimensional structure.Totally four layers of the frequency source structure, wherein radiofrequency signal passes through
SMP connectors carry out interlayer transmission, baseband signal carries out interlayer transmission by button cable, and power supply and control signal pass through glass
Interlayer transmission is carried out to plug-in unit between insulator and plate.
Preferably, in rf broadband frequency agility frequency source described in any one embodiment of the present invention, passive device film
Technique is made, and the passive device includes at least one of following device：First switch wave filter group, second switch wave filter
Group, bandpass filter, power splitter.
At least one embodiment that the embodiment of the present application uses can reach following beneficial effect：
The present invention is based on phase-locked Frequency Synthesis Technique Controlled, direct digital frequency synthesis technology and Direct Digital Frequency Synthesizer Technology
For auxiliary, the ultra wide band of frequency source is realized, subdivision is distinguished, Low phase noise, low spurious and the advantages that quick agile.Corresponding to the present invention
Frequency source reference frequency output 1.25GHz~20GHz, frequency resolution are better than 0.001Hz, and frequency agility speed is less than 1us, miscellaneous
Dissipate index and be better than 60dBc, in carrier frequency 20GHz, its phase noise specifications：- 100dBc/Hz@1kHz, -105dBc/Hz@
10kHz, -110dBc/Hz@10kHz.It is more preferable to contrast traditional frequency source index level.
The present invention breaks through conventional thought, makes full use of layer stereo space, realizes the high-density circuit of three-dimensional structure.
In limited height space, structural box is divided into four layers and is designed, designed compared to more conventional double-layer structure, physical dimension
It is reduced to 1/2.
The present invention utilizes thin-film technique, significantly reduces the volume of passive device, is substantially reduced frequency source structure.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding of the present application, forms the part of the application, this Shen
Schematic description and description please is used to explain the application, does not form the improper restriction to the application.In the accompanying drawings：
Fig. 1 is the schematic diagram of rf broadband frequency agility frequency source embodiment of the present invention；
Fig. 2 is frequency reference module embodiments schematic diagram；
Fig. 3 is baseband module embodiment schematic diagram；
Fig. 4 is local oscillator module embodiments schematic diagram；
Fig. 5 is frequency translation module embodiment schematic diagram；
Fig. 6 is that voltage is preset and clamp circuit embodiment schematic diagram；
Fig. 7 is output module embodiment schematic diagram；
Fig. 8 is frequency source structure longitudinal direction schematic layout pattern.
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described corresponding accompanying drawing.Obviously, described embodiment is only the application one
Section Example, rather than whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out under the premise of creative work the every other embodiment obtained, belong to the scope of the application protection.
With the fast development of micro-system integrated technology, technology and design realization level are all greatly improved.
The multi-layered high-density distribution of chip technology and three-dimensional structure based on passive device, using advanced circuit structure design come real
The miniaturization of existing rf broadband frequency agility frequency source, while the important indicators such as broadband, Low phase noise, low spurious are ensured, weight
Point breaks through the limitation of the indexs such as cost, volume, weight, power consumption, it will existing RF/Microwave/millimetre-wave circuit structure is produced
Significant impact, and trigger subversiveness to reform.Accordingly, it is desirable to provide a kind of miniaturization, high performance rf broadband frequency agility frequency
Source.
Passive device chip technology and sandwich construction scheme proposed by the present invention, it is small not only to have effectively achieved frequency source
Type, while a kind of new approaches, new technology also are provided for existing RF/Microwave/millimetre-wave circuit structure design, by the present invention
In the limited height expanded out, four layers of structure point, even six layers schemes of more layers, can be the weights that following miniaturized structure designs
Want method.
Below in conjunction with accompanying drawing, the technical scheme that each embodiment of the application provides is described in detail.
Fig. 1 is the schematic diagram of rf broadband frequency agility frequency source embodiment of the present invention.A kind of rf broadband frequency agility frequency
Source, include frequency reference module 1, baseband module 2, local oscillator module 3, frequency translation module 4；The frequency reference module, is used for
1000MHz pumping signals are exported to baseband module output 1000MHz reference signals, to the local oscillator module；The base band
Module, for exporting 200~400MHz baseband signals to the frequency translation module；The local oscillator module, for the frequency
In 6 point-frequency signals that the adjusting range that rate conversion module sends low phase noise is 10~20GHz and frequency interval is 2GHz
Any one (can be selected) as local oscillation signal；The frequency translation module, for baseband signal to be carried out into frequency expansion, make
Output signal frequency range of choice is in 1.25~20GHz.
The embodiment further optimized, the rf broadband frequency agility frequency source, also comprising output module 5, for by institute
The output signal for stating frequency translation module is filtered, amplified, decaying, arteries and veins is adjusted etc..
Fig. 2 is frequency reference module embodiments schematic diagram.The frequency reference module includes crystal oscillator 11,10 frequencys multiplication
Device 12, the first frequency mixer 13, the first loop filter 14, sound surface wave pressure control oscillator 15；The crystal oscillator is used to produce
Raw 100MHz signals, 1000MHz signals are generated after 10 frequency multipliers, deliver to the first frequency mixer and sound surface wave pressure control oscillator
The 1000MHz signals of output carry out phase demodulation, then form voltage-controlled voltage by the first loop filter, act on the surface acoustic wave
Voltage controlled oscillator.
Phase discriminator is made using passive device frequency mixer, breaches limitation of the conventional active digital phase discriminator to noise floor,
So as to ensure that the low noise voice output of frequency reference module, while phase demodulation is carried out by the way of phase-locked loop reference signal frequency multiplication,
The traditional approach of phaselocked loop voltage controlled oscillator signal frequency split phase demodulation is changed, phase discrimination signal is to output signal after avoiding frequency divider
The influence of the purity of frequency spectrum, improve the spuious level of reference signal.
Fig. 3 is baseband module embodiment schematic diagram.The baseband module includes 3 frequency multipliers 21, DDS chips 22；It is described
1000MHz reference signals generate 3000MHz signals after 3 frequency multipliers, after the processing of DDS chips, generation described 200~
400MHz baseband signals.Fig. 4 is local oscillator module embodiments schematic diagram.The local oscillator module includes 2 frequency multipliers 31, harmonic oscillator
32nd, bandpass filter 33, the first amplifier 34, first switch wave filter group 35；The 1000MHz pumping signals pass through 2 frequencys multiplication
After device, 2000MHz signals are generated, the scope that frequency adjustment is produced via harmonic oscillator is 10~20GHz, at intervals of 2GHz's
Any one in 6 point-frequency signals, after bandpass filter, the first amplifier, first switch wave filter group described in generation
Local oscillation signal.In embodiments of the present invention, the first switch wave filter group, for selecting 1 conduct in 6 point-frequency signals
The local oscillation signal.
Fig. 5 is frequency translation module embodiment schematic diagram.The frequency translation module further includes phase discriminator 41, second
Loop filter 42, voltage controlled oscillator 43, power splitter 44, the second frequency mixer 45, variable frequency divider 46；Second frequency mixer,
For the output signal of the local oscillation signal and the voltage controlled oscillator to be mixed；The phase discriminator, for that described will mix
Signal and the baseband signal after frequency carry out phase demodulation, deliver to the second loop filter and form voltage-controlled voltage；Second loop filtering
Device includes that voltage is preset and clamp circuit, for the limitation of voltage-controlled voltage within the specific limits, is prevented losing lock and it is wrong lock, lead to simultaneously
Cross accurate preset, realize quick lock in function；Second loop filter output voltage is used to control the voltage controlled oscillator
The signal in stable 10~20GHz band limits is exported, the output signal of voltage controlled oscillator passes through variable frequency divider 1/2/ again
Extended to after 4/8 frequency dividing in the range of 1.25~20GHz；It should be noted that in embodiments of the present invention, the first switch filter
Ripple device group is controlled to be used as local oscillation signal in 6 any 1 of point-frequency signals selections；The controlled selection of variable frequency divider realizes 1,2,
4 or 8 frequency dividings.
Frequency transformation is carried out using the phase-lock mode of hybrid, frequency dividing ratio is reduced, the miscellaneous of output signal can be effectively improved
Dissipate index.The spuious predominantly second harmonic of output signal distal end, can be filtered out by switch filter group in output module,
Near-end is spuious mainly to be determined by baseband module DDS chips, DDS 3GHz clock, the point gone out near 200MHz~400MHz, choosing
Select suitable power output, proximal inhibition is up to more than 75dBc, and using the phase-lock mode of hybrid, it is only 14dB that loop, which deteriorates,
Therefore near-end spurious reduction can be to more than 60dBc.
Frequency transformation is carried out using the phase-lock mode of hybrid, the index of mutually making an uproar of loop will be contributed mainly by local oscillation signal,
Phase discriminator is avoided mutually to make an uproar to output signal the limitation of index, the high local oscillator of simultaneous selection is mixed, and further reduces frequency dividing ratio,
To mutually making an uproar and spuious index all has clear improvement, for conventional phase locked loops, mutually make an uproar at least improves 6dB with spuious index.
In order to improve hybrid lock phase velocity, loop losing lock or wrong lock are avoided, the present invention is using voltage is preset and clamp
The limitation of VCO voltage-controlled voltages within the specific limits, preset quick lock in is realized by accurate by method.
Fig. 6 is that voltage is preset and clamp circuit embodiment schematic diagram.First order amplifier is ± 3V using voltage, final pressure
Control voltage is set to 1/2V loops, leaves voltage-controlled voltage ± 1.5V mobility scale for, ensures every time in pull-in range, so as to eliminate
Losing lock.In VCO front ends and a single-pole single-throw switch (SPST) is connect, its switch time only has 18ns, and response speed is exceedingly fast, in switching frequency range
During, first Vc ends are grounded, then the voltage of preset corresponding frequency, is set to 0V by V loops when preset, ensures preset voltage not
It is disturbed.The effect same with multiple VCO can be so realized, the time less than 200ns can be spent more on the time, by accurate pre-
Put, it can be ensured that the frequency transformation time is within 1us.
By the way of voltage shown in Fig. 6 is preset and clamp circuit replaces traditional clamp diode, ensureing fast switching speed
On the premise of simplify circuit design, reduce circuit volume.
Fig. 7 is output module embodiment schematic diagram.The output module is further comprising second switch wave filter group 52, the
Two amplifiers 53, electrically controlled attenuator 54, numerical-control attenuator 55, arteries and veins adjust device 56；The frequency translation module output signal passes through institute
State second switch wave filter group, the second amplifier, electrically controlled attenuator, numerical-control attenuator, arteries and veins and adjust device processing；The second switch filter
Ripple device group is used to remove harmonic wave, and in one embodiment of the invention, the second switch wave filter group is controllably 1.25
~20GHz frequency range internal gating signals, the frequency of gating and the frequency divider, the work(of the controlled realization of first switch wave filter
Can be corresponding；The electrically controlled attenuator and numerical-control attenuator are respectively used to carry out fine tuning and coarse adjustment to signal power；The arteries and veins is adjusted
Device carries out impulse modulation to output signal.
Fig. 8 is board structure of circuit schematic diagram.Any one embodiment shown in the application Fig. 1~6, using layer stereo structure
It is made, the frequency translation module, local oscillator module, baseband module, frequency reference module, output module are distributed in four-layer structure.
At least two in the frequency translation module, local oscillator module, frequency synthesizing module, frequency reference module are distributed in different layers
It is interior.Radiofrequency signal carries out interlayer transmission by SMP connectors between each module, baseband signal carries out layer by button cable
Between transmit, power supply and control signal to plug-in unit between glass insulator and plate by carrying out interlayer transmission.
It is further preferred that radio circuit needs more debugging, first layer and the 4th layer are positioned over；Power supply processing, numeral
Circuit is positioned over the second layer and third layer.
For example, the frequency translation module and the output module are located at the first layer of the frequency source structure；Described
Module of shaking is located at the 4th layer of the frequency source structure, and completing signal by SMP connectors transmits；The baseband module is located at institute
The third layer of frequency source structure is stated, baseband signal caused by the baseband module passes through frequency described in button cable connection to first layer
Rate conversion module；The frequency reference module is located at the 4th layer of the frequency source structure, caused by the frequency reference module
Reference signal passes through baseband module described in button cable connection to third layer.
The present embodiment further includes power supply and control module, positioned at the second layer and third layer of the frequency source structure,
The power supply and control module are the frequency reference module, the baseband module, the local oscillator module, the frequency transformation mould
Block, the output module provide required voltage, electric current and control signal.The embodiment further optimized as the present invention, institute
Power supply and control module are stated, for output frequency divider control signal, first switch wave filter group control signal, second switch filtering
Device group control signal, it is respectively used to control variable frequency divider 46, first switch wave filter group 35, second switch wave filter group 52.
The power supply and control module are connected by being interconnected between plate to plug-in unit by glass insulator and other layers.
The Multi-layer circuit board structure is encapsulated in box body, and Fig. 7 represents the cross section of sandwich construction, from top to bottom successively
For lid, first layer, the first interlayer, the second layer, third layer, the second interlayer, the 4th layer, box body lower cover on box body.
There is space between lid and first layer on box body；It is close to the first interlayer in first layer lower surface；First interlayer and the second layer
Between have space；There is space between the second layer and third layer；There is space between third layer and the second interlayer；4th layer of upper surface is tight
Paste the second interlayer；4th layer has space between box body lower cover.
Physical dimension embodiment is：1mm is covered on box body；It is close to the first interlayer, circuit thickness of slab in the first layer circuit board lower surface
It is 2.8mm to spend the space between lid on 0.2mm, with box body, and the first compartment thickness is 2mm；Second layer circuit board thickness is
Space height is 0.2mm between 0.8mm, with the first interlayer；Third layer circuit plate thickness is 0.8mm, empty with the second layer circuit board
Gap space height highly between 5mm, with the second interlayer is 0.7mm, and the second compartment thickness is 1mm；Four-layer circuit board upper table
The second interlayer is close in face, and space height of the circuit plate thickness between 0.5mm, with box body lower cover is 4mm.
Further, taken into full account frequency source be compressed in volume, quality etc. caused by electricity, magnetic, heat, power
Etc. many problems.By it is each it is laminated reason setting structure crossbeam position, to realize signal shielding, isolation, mechanical support
Etc. function；Heat dissipation design is done in structure side wall, to avoid device overheat can not normal work.
In the present embodiment, also comprising box side wall；First interlayer, the second interlayer are connected with box side wall；Described
One interlayer, the second interlayer, lid, box body lower cover, the material of box side wall are identical on box body, such as metal.
In the present embodiment, further, frequency source structural box is divided into upper and lower two parts to design, first layer and the second layer
For a construction unit, third layer and the 4th layer are a construction unit, and upper and lower two construction units are fixed by screws in one
Rise.
It is further preferred that the application Fig. 1~7 any one rf broadband frequency agility frequency source embodiment, passive device
Part carries out chip design using thin-film technique.The passive device includes following device：First switch wave filter group, second open
Close wave filter group, bandpass filter, power splitter.The microcircuit comprising resistance, wire is made by precision photolithography in thin film circuit,
Compare conventional microstrip circuit, and size significantly reduces.
It should be noted that the present embodiment uses phase-locked Frequency Synthesis Technique Controlled as main body, direct digital frequency synthesis technology
Frequency synthesis technique with Direct Digital Frequency Synthesizer Technology for auxiliary, realize the ultra wide band of frequency source, subdivision is distinguished, Low phase noise and low
The advantages that spuious.The miniaturization of frequency source is realized using advanced circuit structure design simultaneously, compared to more traditional frequency source,
The frequency source physical dimension proposed in the present embodiment can be contracted to 1/2.
It should also be noted that, in structure design, the present invention breaks through conventional thought, makes full use of layer stereo space,
Realize the high-density circuit of three-dimensional structure.
It should also be noted that, the present invention realizes the work(of the frequency source modules using advanced circuit structure design
Energy, the chip of all passive devices in the frequency source is realized based on thin-film technique.
It should also be noted that, term " comprising ", "comprising" or its any other variant are intended to nonexcludability
Comprising so that process, method, commodity or equipment including a series of elements not only include those key elements, but also wrapping
Include the other element being not expressly set out, or also include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that wanted including described
Other identical element also be present in the process of element, method, commodity or equipment.
Embodiments herein is the foregoing is only, is not limited to the application.For those skilled in the art
For, the application can have various modifications and variations.All any modifications made within spirit herein and principle, it is equal
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (10)
1. a kind of rf broadband frequency agility frequency source, include frequency reference module, baseband module, local oscillator module, frequency transformation mould
Block, it is characterised in that
The frequency reference module, for exporting 1000MHz reference signals to the baseband module, being exported to the local oscillator module
1000MHz pumping signals；
The baseband module, for exporting 200~400MHz baseband signals to the frequency translation module；
The local oscillator module, for the frequency translation module output frequency in the range of 10~20GHz, frequency interval be
Any one in 2GHz 6 point-frequency signals is as local oscillation signal；
The frequency translation module, for by the baseband signal carry out frequency expansion, make output signal frequency be in 1.25~
In the range of 20GHz.
2. rf broadband frequency agility frequency source as claimed in claim 1, it is characterised in that
Output module is also included, for being filtered, amplifying, decaying by the output signal of the frequency translation module, arteries and veins adjusts.
3. rf broadband frequency agility frequency source as claimed in claim 1, it is characterised in that
The frequency reference module includes crystal oscillator, 10 frequency multipliers, the first frequency mixer, the first loop filter, sound surface
Wave pressure controlled oscillator；
The crystal oscillator is used to produce 100MHz signals, and 1000MHz signals are generated after 10 frequency multipliers, and it is mixed to deliver to first
Frequency device and the 1000MHz signals of sound surface wave pressure control oscillator output carry out phase demodulation, then are formed and pressed by the first loop filter
Voltage is controlled, acts on the sound surface wave pressure control oscillator.
4. rf broadband frequency agility frequency source described in claim 1, it is characterised in that
The baseband module is further comprising 3 frequency multipliers, DDS chips；The reference signal is by 3 frequency multiplier, DDS chips
After processing, the baseband signal is generated.
5. rf broadband frequency agility frequency source as claimed in claim 1, it is characterised in that
The local oscillator module includes 2 frequency multipliers, harmonic oscillator, bandpass filter, the first amplifier, first switch wave filter
Group；
The 1000MHz pumping signals generate 2000MHz signals after 2 frequency multipliers, and producing frequency via harmonic oscillator exists
In the range of 10~20GHz, at intervals of any one in 2GHz 6 point-frequency signals, by bandpass filter, the first amplification
The local oscillation signal is generated after device, first switch wave filter group.
6. rf broadband frequency agility frequency source as claimed in claim 1, it is characterised in that
The frequency translation module further mixes comprising phase discriminator, the second loop filter, voltage controlled oscillator, power splitter, second
Frequency device, variable frequency divider；
Second frequency mixer, for the output signal of the local oscillation signal and the voltage controlled oscillator to be mixed；
The phase discriminator, for the signal after the mixing and the baseband signal to be carried out into phase demodulation, deliver to the second loop filtering
Device forms voltage-controlled voltage；
Second loop filter includes that voltage is preset and clamp circuit, for limiting the scope of voltage-controlled voltage；
Second loop filter output voltage is used for the 10~20GHz signals for controlling the voltage controlled oscillator output stable,
The output signal of voltage controlled oscillator is again after the frequency dividing of variable frequency divider 1/2/4/8 in the range of 1.25~20GHz.
7. rf broadband frequency agility frequency source as claimed in claim 2, it is characterised in that
The output module further comprising second switch wave filter group, the second amplifier, electrically controlled attenuator, numerical-control attenuator,
Arteries and veins adjusts device；
The frequency translation module output signal is by the second switch wave filter group, the second amplifier, electrically controlled attenuator, number
Control attenuator, arteries and veins adjusts device processing；
The second switch wave filter group is used to remove harmonic wave；
The electrically controlled attenuator and numerical-control attenuator are respectively used to carry out fine tuning and coarse adjustment to signal power；
The arteries and veins adjusts device to carry out impulse modulation to output signal.
8. the rf broadband frequency agility frequency source as described in claim 1~7 any one, it is characterised in that
Totally four layers of the frequency source structure；
At least two in the frequency translation module, local oscillator module, frequency synthesizing module, frequency reference module are distributed in difference
In layer；
Radiofrequency signal carries out interlayer transmission by SMP connectors, baseband signal carries out interlayer transmission by button cable, power supply and
Control signal to plug-in unit between glass insulator and plate by carrying out interlayer transmission.
9. the rf broadband frequency agility frequency source as described in claim 5~7 any one, it is characterised in that
Passive device is made of thin-film technique, and the passive device includes at least one of following device：First switch wave filter
Group, second switch wave filter group, bandpass filter, power splitter.
10. rf broadband frequency agility frequency source as claimed in claim 8, it is characterised in that
The frequency translation module and the output module are located at the first layer of the frequency source structure；
The local oscillator module is located at the 4th layer of the frequency source structure, and completing signal by SMP connectors transmits；
The baseband module is located at the third layer of the frequency source structure, and baseband signal caused by the baseband module passes through button
Frequency translation module described in cable connection to first layer；
The frequency reference module is located at the 4th layer of the frequency source structure, reference signal caused by the frequency reference module
Pass through baseband module described in button cable connection to third layer.
The Multi-layer circuit board structure is encapsulated in box body, is followed successively by lid on box body, first layer, the first interlayer, from top to bottom
Two layers, third layer, the second interlayer, the 4th layer, box body lower cover.
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| CN107835014B (en) | 2021-02-26 |
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