CN107833827B - Etching method of array substrate - Google Patents

Etching method of array substrate Download PDF

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Publication number
CN107833827B
CN107833827B CN201711005865.7A CN201711005865A CN107833827B CN 107833827 B CN107833827 B CN 107833827B CN 201711005865 A CN201711005865 A CN 201711005865A CN 107833827 B CN107833827 B CN 107833827B
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etching
array substrate
bubbles
etched
metal layer
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CN107833827A (en
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徐元权
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

The invention provides an etching method of an array substrate, which comprises the following steps: generating bubbles in the etching liquid through an ultrasonic device to obtain the etching liquid containing the bubbles, and etching the array substrate to be etched by using the etching liquid containing the bubbles, wherein the array substrate to be etched comprises a bearing substrate, a metal layer and a light resistor which are sequentially stacked. The etching method of the array substrate provided by the invention can ensure that the Taper angle of the metal layer is reduced as much as possible on the premise of not increasing the line width deviation, thereby ensuring that the risk of film layer fracture does not exist on the etched metal layer in the subsequent coating.

Description

Etching method of array substrate
Technical Field
The invention relates to the technical field of display, in particular to an etching method of an array substrate.
Background
In the manufacturing process of the array substrate, the structure of a TFT (Thin Film Transistor) mainly includes: the array substrate comprises a Gate metal layer 1 '(i.e., a Gate metal layer, GE for short), a Gate insulating layer 2' (i.e., a GI layer), an Active layer 3 '(i.e., an Active layer), an SD metal layer 4' (i.e., an S/D electrode, i.e., a metal layer for preparing a source and a drain), a PV insulating layer 5 ', an ITO (indium tin oxide) layer 6', and film layers, wherein the process, the manufacturing process and the structure of each film layer are shown in fig. 1, the array substrate manufactured is shown in fig. 2, and the array substrate comprises an effective display area (i.e., an AA. One layer of film is formed through coating film, coating photoresist, exposing, developing, and etching, wherein the etching process is as shown in fig. 3, and reference numeral 7 'in fig. 3, 4, and 6 is a metal layer, and reference numeral 8' is a photoresist. Wherein the metal layer 8 ' includes the gate metal layer 1 ' or the SD metal layer 4 '. Etching of the metal layer 8 ' needs to be performed by using an etching solution (referred to as an etching solution for short), and after exposure and development, a photoresist 7 ' is protected above a portion to be etched on the metal layer 8 ', so that an edge portion of the photoresist 7 ' has a certain blocking effect on the etching solution, and the edge of the photoresist 7 ' is shown in fig. 4. The chemical liquid is difficult to penetrate into the upper end of the metal layer 8 ' due to the surface tension of the photoresist 7 ', and contacts with the upper end of the metal layer 8 ', so that the etching of the upper end of the metal layer 8 ' is less, as shown in fig. 5a, so that the Taper angle (i.e., the slope angle) formed on the metal layer 8 ' is relatively large, and if the Taper angle is relatively large, the film layer subsequently plated on the metal layer 8 ' is broken, the Taper angle T shown in fig. 5a is 60.11 degrees, and the line width deviation x of the metal layer 8 ' is 0.224 micrometers. As can be seen from the results of some tests (generally, Al (i.e. aluminum) etching), when etching is performed, as shown in fig. 5b, the edge portion (e.g. the portion in the circle in fig. 5 b) of a portion of the photoresist 7 ' may be tilted upward, which may make the adhesion of the photoresist 7 ' to the etching solution smaller, so that the etching solution may easily contact with the upper end of the metal layer 8 ', which may make the Taper angle formed after etching the metal layer smaller, and is beneficial for the subsequent processes, the Taper angle of the metal layer shown in fig. 5b is about 45 degrees, and the line width deviation x of the metal layer is 0.1786 microns.
In the process of Al etching, the etching liquid medicine contains nitric acid, nitrogen oxide gas can be generated after Al and nitric acid react, the gas is discharged in the liquid medicine to generate micro bubbles, the micro bubbles are broken when touching the edge of the photoresistance 7 'and generate certain impact force, the edge photoresistance 7' slightly tilts upwards by the impact force, the etching liquid medicine can be easily contacted with the upper end of the metal layer 8 ', the upper end of the metal layer 8' is etched, and finally the Taper angle is reduced.
In the conventional process, an etching solution manufacturer adjusts the amount and frequency of generated bubbles by adjusting the concentration of nitric acid, but the adjustment method is greatly limited because the concentration of nitric acid in the etching solution affects the etching rate and the processing time, and meanwhile, if the material of the metal layer 8 'is other metal oxide, gas cannot be generated in the etching process, so that the edge of the photoresist 7' cannot be tilted, which causes a great obstacle to formation and modification of the Taper angle of the metal layer 8 ', and if the reaction time is prolonged to obtain a smaller Taper angle, the metal or metal oxide under the photoresist 7' is excessively etched, so that the line width deviation (CD Bias) becomes large, as shown in fig. 6, so that a product with high resolution cannot be made.
Disclosure of Invention
In order to solve the technical problem, the invention provides an etching method of an array substrate, which can ensure that the Taper angle of a metal layer is reduced as much as possible on the premise of not increasing the line width deviation, thereby ensuring that no risk of film layer fracture exists on the etched metal layer in the subsequent coating.
The invention provides an etching method of an array substrate, which comprises the following steps:
generating bubbles in the etching liquid through an ultrasonic device to obtain the etching liquid containing the bubbles, and etching the array substrate to be etched by using the etching liquid containing the bubbles, wherein the array substrate to be etched comprises a bearing substrate, a metal layer and a light resistor which are sequentially stacked.
Further, generating bubbles in the etching solution by an ultrasonic device comprises the following steps:
generating ultrasonic waves in the etching liquid through the ultrasonic device to generate bubbles in the etching liquid;
etching the array substrate to be etched by using etching liquid containing bubbles, and when the edge of the light resistor is not tilted, improving the frequency of the ultrasonic wave generated by the ultrasonic wave device so as to increase the quantity and frequency of the bubbles generated in the etching liquid.
Further, generating bubbles in the etching solution by an ultrasonic device, further comprising the steps of:
when the photoresist begins to separate from the metal layer, the frequency of the ultrasonic wave generated by the ultrasonic wave device is reduced so as to reduce the quantity and the frequency of bubbles generated in the etching liquid.
Further, generating bubbles in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and etching the array substrate to be etched by using the etching solution containing the bubbles, wherein the method comprises the following steps:
filling etching liquid into the soaking tank;
sending the array substrate to be etched into the soaking groove, so that the array substrate to be etched is soaked by the etching solution;
collecting the position information of the array substrate to be etched, and controlling the ultrasonic device arranged in the soaking tank to generate ultrasonic waves in the etching liquid according to a set frequency when the array substrate to be etched reaches a set position so as to generate bubbles in the etching liquid.
Further, generating bubbles in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and etching the array substrate to be etched by using the etching solution containing the bubbles, wherein the method further comprises the following steps:
and when the array substrate to be etched leaves the set position, controlling the ultrasonic device to stop generating ultrasonic waves.
Further, generating bubbles in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and etching the array substrate to be etched by using the etching solution containing the bubbles, wherein the method comprises the following steps:
generating ultrasonic waves in the etching liquid according to a set frequency by using an ultrasonic device in a container filled with the etching liquid so as to generate bubbles in the etching liquid;
sending the array substrate to be etched into a spraying groove;
and conveying the etching liquid containing the air bubbles to a nozzle above the spraying groove, and spraying the etching liquid containing the air bubbles to the array substrate to be etched through the nozzle so as to etch the array substrate to be etched.
Further, the etching liquid is used for etching the metal layer, and the etching liquid contains at least one of nitric acid, acetic acid and phosphoric acid.
Further, the method also comprises the following steps:
forming the metal layer on the carrier substrate;
forming the photoresist on the metal layer;
and patterning the light resistor to obtain the array substrate to be etched.
The implementation of the invention has the following beneficial effects: produce the bubble through ultrasonic device in the etching solution, use the etching solution that contains the bubble to carry out the sculpture to metal level 2 on the array substrate, can make 3 marginal perks of photoresistance on the metal level 2, the etching solution is carried out the sculpture to the upper end of metal level 2 more easily, and can not prolong the time of sculpture, therefore can guarantee on the prerequisite that the linewidth deviation of metal level 2 can not grow, make the Taper angle of metal level 2 diminish, thereby make on the metal level 2 of accomplishing the sculpture, follow-up coating film does not have the cracked risk of rete.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a process for manufacturing an array substrate according to the background art.
Fig. 2 is a schematic structural diagram of an array substrate in the background art provided by the present invention.
Fig. 3 is a schematic diagram illustrating etching of a metal layer on an array substrate in the background art provided by the present invention.
FIG. 4 is a schematic diagram of a photoresist edge provided by the present invention.
Fig. 5a is an electron microscope image of the etched metal layer corresponding to the etching solution of the background art provided by the present invention, which does not contain bubbles.
FIG. 5b is an electron microscope image of the etched metal layer corresponding to the edge lift of the photoresist above the metal layer during the etching process provided by the present invention.
Fig. 6 is a schematic diagram illustrating that an etching time is increased in an etching process of a metal layer on an array substrate in the background art provided by the present invention.
Fig. 7 is a flowchart of an etching method of an array substrate provided by the present invention.
Fig. 8 is a schematic structural diagram of an array substrate to be etched according to the present invention.
Fig. 9 is an etching schematic diagram corresponding to bubbles generated in an etching solution when the array substrate is etched according to the present invention.
Detailed Description
The invention provides an etching method of an array substrate, as shown in fig. 7, the method comprises the following steps:
generating bubbles in the etching liquid through an ultrasonic device to obtain the etching liquid containing the bubbles, and etching the array substrate to be etched by using the etching liquid containing the bubbles; as shown in fig. 8, the array substrate to be etched includes a carrier substrate 1, a metal layer 2 and a photoresist 3, which are sequentially stacked. Here, the carrier substrate 1 is generally a glass substrate, and the metal layer may include a gate metal layer or an SD metal layer (i.e., a metal layer for preparing a source electrode and a drain electrode). As shown in fig. 9, there are bubbles around the metal layer 2 during the etching process, and after the etching process is completed, compared with the technical solution in the background art, the line width deviation of the metal layer 2 will not become large, and the Taper angle will be reduced.
Further, generating bubbles in the etching solution by an ultrasonic device comprises the following steps:
in the etching process, adding an ultrasonic device in the etching groove, and generating ultrasonic waves in the etching liquid through the ultrasonic device so as to generate bubbles in the etching liquid;
etching the array substrate to be etched by using the etching liquid containing bubbles, and when the edge of the photoresist 3 is not tilted, improving the frequency of ultrasonic waves generated by the ultrasonic device so as to increase the quantity and frequency of bubbles generated in the etching liquid. Here, the etching tank may be a soaking tank or a spraying tank.
The ultrasonic wave propagates in the etching liquid and vibrates to produce the bubble, the bubble has certain impact to 3 edges of photoresistance, makes 3 edge perks of photoresistance, therefore in the sculpture, the etching liquid contacts the upper end of metal level 2 more easily, makes metal level 2 upper end easily by the sculpture, can reduce the Tpaer angle (being the slope angle) of metal level 2.
Further, generating bubbles in the etching solution by an ultrasonic device, further comprising the steps of:
when the photoresist 3 begins to be separated from the metal layer 2, the frequency of ultrasonic wave generated by the ultrasonic wave device is reduced so as to reduce the quantity and frequency of bubbles generated in the etching solution.
The number and the frequency of bubbles caused by ultrasonic waves in the etching liquid are controlled by adjusting the frequency of the ultrasonic waves generated by the ultrasonic device, and the optimal ultrasonic generation frequency is determined by debugging, so that the edge of the photoresist 3 can be prevented from tilting, and the photoresist 3 can be prevented from separating from the metal layer 2.
Further, generating bubbles in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and etching the array substrate to be etched by using the etching solution containing the bubbles, wherein the method comprises the following steps:
filling etching liquid into the soaking tank;
sending the array substrate to be etched into a soaking groove, so that the array substrate to be etched is soaked by the etching solution, and controlling the soaking groove to swing;
the method comprises the steps of collecting position information of an array substrate to be etched, judging the position of the array substrate to be etched according to the position information of the array substrate to be etched, and controlling an ultrasonic device arranged in a soaking tank to generate ultrasonic waves in etching liquid according to set frequency when the array substrate to be etched reaches a set position so as to generate bubbles in the etching liquid.
Further, generating bubbles in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and etching the array substrate to be etched by using the etching solution containing the bubbles, wherein the method further comprises the following steps:
and when the array substrate to be etched leaves the set position, controlling the ultrasonic device to stop generating ultrasonic waves, so as to stop generating bubbles in the etching liquid.
In another embodiment, bubbles are generated in the etching solution through an ultrasonic device to obtain the etching solution containing the bubbles, and the array substrate to be etched is etched by using the etching solution containing the bubbles, which comprises the following steps:
generating ultrasonic waves in the etching liquid according to a set frequency by using an ultrasonic device in a container filled with the etching liquid so as to generate bubbles in the etching liquid;
sending the array substrate to be etched into a spraying groove;
and conveying the etching liquid containing the air bubbles to a nozzle above the spraying groove, and spraying the etching liquid containing the air bubbles to the array substrate to be etched through the nozzle so as to etch the array substrate to be etched.
Further, the etching solution is used for etching the metal layer 2, and the etching solution contains at least one of nitric acid, acetic acid and phosphoric acid. Preferably, the etching liquid is a mixed solution of nitric acid, acetic acid and phosphoric acid.
Further, the method also comprises the following steps:
forming a metal layer 2 on a carrier substrate 1;
forming a photoresist 3 on the metal layer 2;
and patterning the light resistance 3 to obtain the array substrate to be etched. The patterned photoresist 3 is formed by exposing and developing the photoresist 3 to prepare a specific pattern of the photoresist 3.
In summary, according to the etching method of the array substrate provided by the invention, bubbles are generated in the etching solution through the ultrasonic device, and the etching solution containing the bubbles is used for etching the metal layer 2 on the array substrate, so that the edge of the photoresist 3 on the metal layer 2 is tilted, the etching solution can more easily etch the upper end of the metal layer 2, and the etching time is not prolonged, thereby ensuring that the Taper angle of the metal layer 2 is reduced as much as possible on the premise that the line width deviation of the metal layer 2 is not increased, so that the risk of film fracture is avoided in the subsequent coating on the etched metal layer 2.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (7)

1. An etching method of an array substrate is characterized by comprising the following steps:
generating ultrasonic waves in the etching liquid through an ultrasonic device to generate bubbles in the etching liquid to obtain the etching liquid containing the bubbles, and etching the array substrate to be etched by using the etching liquid containing the bubbles, wherein the array substrate to be etched comprises a bearing substrate, a metal layer and a light resistor which are sequentially laminated; when the edge of the light resistance is not tilted, the frequency of the ultrasonic wave generated by the ultrasonic wave device is increased so as to increase the quantity and the frequency of bubbles generated in the etching liquid.
2. The method for etching the array substrate according to claim 1, wherein bubbles are generated in the etching solution by an ultrasonic device, further comprising the steps of:
when the photoresist begins to separate from the metal layer, the frequency of the ultrasonic wave generated by the ultrasonic wave device is reduced so as to reduce the quantity and the frequency of bubbles generated in the etching liquid.
3. The etching method of the array substrate according to claim 1, wherein bubbles are generated in the etching solution by an ultrasonic device to obtain the etching solution containing the bubbles, and the array substrate to be etched is etched by using the etching solution containing the bubbles, comprising the steps of:
filling etching liquid into the soaking tank;
sending the array substrate to be etched into the soaking groove, so that the array substrate to be etched is soaked by the etching solution;
collecting the position information of the array substrate to be etched, and controlling the ultrasonic device arranged in the soaking tank to generate ultrasonic waves in the etching liquid according to a set frequency when the array substrate to be etched reaches a set position so as to generate bubbles in the etching liquid.
4. The etching method of the array substrate according to claim 3, wherein bubbles are generated in the etching solution by an ultrasonic device to obtain the etching solution containing the bubbles, and the array substrate to be etched is etched by using the etching solution containing the bubbles, further comprising the steps of:
and when the array substrate to be etched leaves the set position, controlling the ultrasonic device to stop generating ultrasonic waves.
5. The etching method of the array substrate according to claim 1, wherein bubbles are generated in the etching solution by an ultrasonic device to obtain the etching solution containing the bubbles, and the array substrate to be etched is etched by using the etching solution containing the bubbles, comprising the steps of:
generating ultrasonic waves in the etching liquid according to a set frequency by using an ultrasonic device in a container filled with the etching liquid so as to generate bubbles in the etching liquid;
sending the array substrate to be etched into a spraying groove;
and conveying the etching liquid containing the air bubbles to a nozzle above the spraying groove, and spraying the etching liquid containing the air bubbles to the array substrate to be etched through the nozzle so as to etch the array substrate to be etched.
6. The method for etching the array substrate according to claim 1, wherein an etching solution is used for etching the metal layer, and the etching solution comprises at least one of nitric acid, acetic acid and phosphoric acid.
7. The etching method of the array substrate according to claim 1, further comprising the steps of:
forming the metal layer on the carrier substrate;
forming the photoresist on the metal layer;
and patterning the light resistor to obtain the array substrate to be etched.
CN201711005865.7A 2017-10-25 2017-10-25 Etching method of array substrate Active CN107833827B (en)

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Citations (4)

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JP2004146545A (en) * 2002-10-24 2004-05-20 Univ Shizuoka Etching method and etching device for silicon substrate
CN101154581A (en) * 2006-09-26 2008-04-02 冲电气工业株式会社 Apparatus for manufacturing semiconductor device, wet etching process device and wet etching process method
US20110017707A1 (en) * 2007-11-20 2011-01-27 Francis Baillet Method and device for selective etching
CN104658905A (en) * 2015-02-27 2015-05-27 深圳市华星光电技术有限公司 Etching method and substrate

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JPS5789228A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Manufacture of semiconductor device
JPH0790628A (en) * 1993-09-24 1995-04-04 Toray Ind Inc Etching device and etching method for thin film
JP4187819B2 (en) * 1997-03-14 2008-11-26 シャープ株式会社 Method for manufacturing thin film device
JP3883706B2 (en) * 1998-07-31 2007-02-21 シャープ株式会社 Etching method and method of manufacturing thin film transistor matrix substrate
FR2945663B1 (en) * 2009-05-18 2012-02-17 Inst Polytechnique Grenoble METHOD FOR ETCHING A MATERIAL IN THE PRESENCE OF SOLID PARTICLES
FR2945662B1 (en) * 2009-05-18 2012-02-17 Inst Polytechnique Grenoble METHOD FOR ETCHING A MATERIAL IN THE PRESENCE OF A GAS
CN102803562B (en) * 2009-06-25 2015-09-30 3M创新有限公司 The method of Wet-type etching self-assembled monolayer patterned substrate and metal pattern goods
JP6135999B2 (en) * 2012-04-10 2017-05-31 三菱瓦斯化学株式会社 Liquid composition used for etching multilayer film containing copper and molybdenum, and etching method using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146545A (en) * 2002-10-24 2004-05-20 Univ Shizuoka Etching method and etching device for silicon substrate
CN101154581A (en) * 2006-09-26 2008-04-02 冲电气工业株式会社 Apparatus for manufacturing semiconductor device, wet etching process device and wet etching process method
US20110017707A1 (en) * 2007-11-20 2011-01-27 Francis Baillet Method and device for selective etching
CN104658905A (en) * 2015-02-27 2015-05-27 深圳市华星光电技术有限公司 Etching method and substrate

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