CN107822650B - Back scattering model generation method, method for removing back scattering artifacts and imaging system - Google Patents
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Abstract
The invention provides a back powderThe method for generating the back scattering model comprises the following steps: presetting shooting parameters, and respectively shooting, imaging and processing an object to be imaged by adopting a first flat panel detector under different X-ray generation voltages to obtain a first correction image group; presetting the same shooting parameters as the step S1, and respectively shooting, imaging and processing the object to be imaged by adopting a second flat panel detector under the same X-ray generation voltage as the synchronization step S1 to obtain a second correction image group; according to the formula
And obtaining the backscattering distribution corresponding to each X-ray generation voltage, thereby obtaining a backscattering model consisting of a plurality of backscattering distributions. By the backscatter model generation method, the method for removing the backscatter artifact and the imaging system, the problems that an existing flat panel detector capable of removing the backscatter artifact is high in manufacturing cost and heavy in weight and is not beneficial to achieving portability are solved.
Description
Technical Field
The invention belongs to the field of X-ray flat panel detectors, and particularly relates to a back scattering model generation method, a back scattering artifact removal method and an imaging system.
Background
The flat panel detector is an imaging device for radiation imaging, and the structure of the flat panel detector comprises a scintillator, a TFT photosensitive panel, a PCBA (signal reading and transmission circuit) and a mechanical structure, and the flat panel detector is mainly applied to radiation diagnosis imaging in clinic. The imaging principle of the flat panel detector is as follows: the X-ray penetrates through the detected object and then enters the surface of the detector, the scintillator converts the X-ray into visible light, the TFT photosensitive panel absorbs the visible light and converts the visible light into photoelectric charge, the photoelectric charge is converted into a level signal through the TFT switch array and the integral operational amplifier circuit, the level signal is converted into a digital signal through the AD circuit and transmitted to the upper computer, and digital image display is achieved.
Since the scintillator cannot completely absorb the X-rays, for example, a CsI with a thickness of 400um, under the energy spectrum radiation of 70kV X-rays, the absorption rate of the scintillator to the X-rays is about 85%, and as the energy of the X-rays increases, the absorption rate to the X-rays will decrease continuously. Therefore, part of the X-rays are not absorbed by the scintillator, and the part of the X-rays directly penetrate through the TFT photosensitive panel, the PCBA and the mechanical structural parts of the flat panel detector after penetrating through the scintillator.
In the prior art, for example, in U.S. Pat. No. US20140042331a1, a layer of uniform and flat lead rubber is added between a TFT photosensitive panel and a PCBA to prevent back scattering, so as to remove the back scattering artifact of an image; however, the addition of a layer of lead rubber in the flat panel detector not only increases the manufacturing cost of the flat panel detector, but also increases the weight of the flat panel detector, thereby limiting the portability of the flat panel detector.
Therefore, it is necessary to design a new method for generating a backscatter model, a method for removing a backscatter artifact, and an imaging system to solve the above technical problems.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a method for generating a backscatter model, a method for removing a backscatter artifact, and an imaging system, which are used to solve the problems of high manufacturing cost, heavy weight, and inconvenience for portability of the conventional flat panel detector capable of removing a backscatter artifact.
To achieve the above and other related objects, the present invention provides a method for generating a backscatter model, the method comprising:
step S1: presetting shooting parameters, and respectively shooting, imaging and processing an object to be imaged by adopting a first flat panel detector under different X-ray generation voltages to obtain a first correction image group, wherein the first correction image group comprises a plurality of first correction images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S2: presetting the same shooting parameters as in the step S1, and respectively shooting, imaging and processing the object to be imaged by using a second flat panel detector under the same X-ray generation voltage as in the step S1 to obtain a second correction image group, wherein the second correction image group comprises a plurality of second correction images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S3: according to the formula
Obtaining the backscattering distribution corresponding to each X-ray generation voltage, thereby obtaining a backscattering model consisting of a plurality of backscattering distributions; wherein Psn is a backscatter distribution corresponding to an X-ray generation voltage, P1n is a first correction image with a backscatter artifact corresponding to the X-ray generation voltage in the first correction image group, and P2n is a second correction image without a backscatter artifact corresponding to the X-ray generation voltage in the second correction image group.
Preferably, the method of obtaining the first corrected image group includes:
step S11: when no X-ray radiation exists, the first flat panel detector collects images to obtain a first dark field image;
step S12: under different X-ray generation voltages, a first flat panel detector is adopted to respectively shoot and image an object to be imaged to obtain a first original image group, wherein the first original image group comprises a plurality of first original images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S13: according to the formula P1 n-P1 yn-offset _ map1, a first corrected image with backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a first corrected image group consisting of a plurality of first corrected images, wherein P1n is the first corrected image corresponding to one X-ray generation voltage, P1yn is the first original image corresponding to the X-ray generation voltage in the first original image group, and offset _ map1 is the first dark field image.
Preferably, the method for obtaining the second correction image group comprises:
step S21: when no X-ray radiation exists, the second flat panel detector collects images to obtain a second dark field image;
step S22: under the same X-ray generation voltage in the synchronization step S1, shooting and imaging the object to be imaged respectively by using a second flat panel detector to obtain a second original image group, wherein the second original image group comprises a plurality of second original images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S23: according to the formula P2 n-P2 yn-offset _ map2, a second correction image without backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a second correction image group consisting of a plurality of second correction images, wherein P2n is the second correction image corresponding to one X-ray generation voltage, P2yn is the second original image corresponding to the X-ray generation voltage in the second original image group, and offset _ map2 is the second dark field image.
Preferably, the voltage range of the different X-ray generating voltages is 40kV to 150kV, and the interval between two adjacent X-ray generating voltages is 1 kV.
Preferably, the different X-ray generating voltages have a voltage range of 60kV to 150kV, and the interval between two adjacent X-ray generating voltages is 10 kV.
Preferably, an anti-back scattering layer is arranged between the TFT photosensitive panel and the PCBA of the second flat panel detector, wherein the material of the anti-back scattering layer is lead rubber.
Preferably, an anti-back scattering layer is additionally arranged between the TFT photosensitive panel and the PCBA of the first flat panel detector to form the second flat panel detector; wherein, the material of the back scattering prevention layer is lead rubber.
The present invention also provides an imaging system comprising:
a first flat panel detector;
the upper computer is connected with the first flat panel detector;
wherein a backscatter model generated by the generation method according to any one of the above methods is prestored in the first flat panel detector or the upper computer.
The invention also provides a method for removing backscattering artifacts using an imaging system as described above, the method comprising:
step 1) presetting shooting parameters, and under the condition of presetting X-ray generation voltage, adopting a first flat detector to shoot, image and process an object to be imaged to obtain an image to be processed with a back scattering artifact;
step 2) calling back scattering distribution corresponding to the preset X-ray generation voltage from a back scattering model according to the preset X-ray generation voltage;
and 3) processing the backscattering artifact of the image to be processed according to a formula Px (Px 1X) (1-Psn ') to obtain a final image without the backscattering artifact, wherein Px is the final image, Px1 is the image to be processed, and Psn' is backscattering distribution corresponding to the preset X-ray generation voltage in the backscattering model.
Preferably, the method for obtaining the image to be processed includes:
step 11) shooting and imaging an object to be imaged by adopting a first flat panel detector under a preset X-ray generating voltage to obtain an original image with a back scattering artifact;
step 12) obtaining an image to be processed according to a formula Px 1-Pxy-offset _ map1, where Px1 is the image to be processed, Pxy is the original image, and offset _ map1 is the first dark field image.
As described above, the method for generating a back scattering model, the method for removing a back scattering artifact, and the imaging system of the present invention have the following advantages: the system and the method of the invention remove the back scattering artifacts, do not need to improve the structure of the flat panel detector, not only reduce the manufacturing cost of the flat panel detector, but also reduce the weight of the flat panel detector, and greatly increase the portability of the flat panel detector.
Drawings
Fig. 1 is a flowchart illustrating a method for generating a backscatter model according to an embodiment.
Fig. 2 is a block diagram of an imaging system according to a second embodiment.
Fig. 3 is a flowchart of the method for removing backscattering artifacts according to the third embodiment.
Description of the element reference numerals
10 imaging system
20 first flat panel detector
30 upper computer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 1, the present embodiment provides a backscatter model generation method, where the generation method includes:
step S1: presetting shooting parameters, and respectively shooting, imaging and processing an object to be imaged by adopting a first flat panel detector under different X-ray generation voltages to obtain a first correction image group, wherein the first correction image group comprises a plurality of first correction images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S2: presetting the same shooting parameters as in the step S1, and respectively shooting, imaging and processing the object to be imaged by using a second flat panel detector under the same X-ray generation voltage as in the step S1 to obtain a second correction image group, wherein the second correction image group comprises a plurality of second correction images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S3: according to the formula
Obtaining the back scattering distribution corresponding to each X-ray generation voltage, thereby obtaining a plurality of back lightsA back scattering model consisting of scattering distributions; wherein Psn is a backscatter distribution corresponding to an X-ray generation voltage, P1n is a first correction image with a backscatter artifact corresponding to the X-ray generation voltage in the first correction image group, and P2n is a second correction image without a backscatter artifact corresponding to the X-ray generation voltage in the second correction image group.
It should be noted that the shooting parameters include a gray scale value, wherein the setting of the gray scale value is generally suitable for half of a saturated gray scale value of the flat panel detector.
As an example, the voltage range of different X-ray generation voltages is 40kV to 150kV, and the interval between two adjacent X-ray generation voltages is 1 kV.
Preferably, in the embodiment, the voltage range of the different X-ray generation voltages is 60kV to 150kV, and the interval between two adjacent X-ray generation voltages is 10 kV; that is, in the present embodiment, the X-ray generating voltage includes 60kV, 70kV, 80kV, 90kV, 100kV, 110kV, 120kV, 130kV, 140kV and 150 kV.
As an example, the method of obtaining the first corrected image group includes:
step S11: when no X-ray is radiated, the first flat panel detector collects images to obtain a first dark field image;
step S12: under different X-ray generation voltages, a first flat panel detector is adopted to respectively shoot and image an object to be imaged to obtain a first original image group, wherein the first original image group comprises a plurality of first original images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S13: according to the formula P1 n-P1 yn-offset _ map1, a first corrected image with backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a first corrected image group consisting of a plurality of first corrected images, wherein P1n is the first corrected image corresponding to one X-ray generation voltage, P1yn is the first original image corresponding to the X-ray generation voltage in the first original image group, and offset _ map1 is the first dark field image.
It should be noted that, the first flat panel detector described in this embodiment refers to any existing flat panel detector without removing the backscattering artifact.
It should be noted that the first dark field image is generated by noise of the first flat panel detector, so that the first original image is corrected by using the first dark field image, and the accuracy of the image can be greatly improved.
It should be further noted that, since the dark-field image is caused by the flat panel detector itself, the dark-field image of each flat panel detector may be different for a plurality of different flat panel detectors.
As an example, the method of obtaining the second correction image group includes:
step S21: when no X-ray is radiated, the second flat panel detector collects images to obtain a second dark field image;
step S22: under the same X-ray generation voltage in the synchronization step S1, shooting and imaging the object to be imaged respectively by using a second flat panel detector to obtain a second original image group, wherein the second original image group comprises a plurality of second original images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S23: according to the formula P2 n-P2 yn-offset _ map2, a second correction image without backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a second correction image group consisting of a plurality of second correction images, wherein P2n is the second correction image corresponding to one X-ray generation voltage, P2yn is the second original image corresponding to the X-ray generation voltage in the second original image group, and offset _ map2 is the second dark field image.
It should be noted that, the second flat panel detector in this embodiment is a conventional flat panel detector that adds an anti-backscattering layer between a TFT (thin film transistor) photosensitive panel and a PCBA, where the material of the anti-backscattering layer is lead rubber.
It should be further noted that, in order to accurately obtain the scattering model of this embodiment, a back scattering prevention layer is additionally provided between the TFT photosensitive panel and the PCBA of the first flat panel detector to form the second flat panel detector; wherein, the material of the back scattering prevention layer is lead rubber.
It should be noted that the second dark field image is generated by noise of the second flat panel detector, so that the second original image is corrected by using the second dark field image, and the accuracy of the image can be greatly improved.
It should be further noted that, since the dark-field image is caused by the flat panel detector itself, the dark-field image of each flat panel detector may be different for a plurality of different flat panel detectors.
Example two
As shown in fig. 2, the present embodiment provides an imaging system, the imaging system 10 including:
a first flat panel detector 20;
an upper computer 30 connected to the first flat panel detector 20;
the first flat panel detector 20 or the upper computer 30 has a backscatter model pre-stored therein, which is generated by the generation method according to the first embodiment.
It should be noted that, the first flat panel detector described in this embodiment refers to any existing flat panel detector without removing the backscattering artifact.
EXAMPLE III
As shown in fig. 3, the present embodiment provides a method for removing backscattering artifacts by using the imaging system according to the second embodiment, where the method includes:
step 1) presetting shooting parameters, and under the condition of presetting X-ray generation voltage, adopting a first flat detector to shoot, image and process an object to be imaged to obtain an image to be processed with a back scattering artifact;
step 2) calling back scattering distribution corresponding to the preset X-ray generation voltage from a back scattering model according to the preset X-ray generation voltage;
and 3) processing the backscattering artifact of the image to be processed according to a formula Px (Px 1X) (1-Psn ') to obtain a final image without the backscattering artifact, wherein Px is the final image, Px1 is the image to be processed, and Psn' is backscattering distribution corresponding to the preset X-ray generation voltage in the backscattering model.
It should be noted that the shooting parameters include a gray scale value, wherein the setting of the gray scale value is generally suitable for half of a saturated gray scale value of the flat panel detector.
As an example, the method for obtaining the image to be processed includes:
step 11) shooting and imaging an object to be imaged by adopting a first flat panel detector under a preset X-ray generating voltage to obtain an original image with a back scattering artifact;
step 12) obtaining an image to be processed according to a formula Px 1-Pxy-offset _ map1, where Px1 is the image to be processed, Pxy is the original image, and offset _ map1 is the first dark field image.
It should be noted that the first dark field image is generated by noise of the first flat panel detector, so that the first original image is corrected by using the first dark field image, and the accuracy of the image can be greatly improved.
It should be further noted that, since the dark-field image is caused by the flat panel detector itself, the dark-field image of each flat panel detector may be different for a plurality of different flat panel detectors.
In summary, the method for generating a backscattering model, the method for removing backscattering artifacts and the imaging system of the present invention have the following advantages: the system and the method of the invention remove the back scattering artifacts, do not need to improve the structure of the flat panel detector, not only reduce the manufacturing cost of the flat panel detector, but also reduce the weight of the flat panel detector, and greatly increase the portability of the flat panel detector. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method of generating a backscatter model, the method comprising:
step S1: presetting shooting parameters, and respectively shooting, imaging and processing an object to be imaged by adopting a first flat panel detector under different X-ray generation voltages to obtain a first correction image group, wherein the first correction image group comprises a plurality of first correction images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S2: presetting the same shooting parameters as in the step S1, and respectively shooting, imaging and processing the object to be imaged by using a second flat panel detector under the same X-ray generation voltage as in the step S1 to obtain a second correction image group, wherein the second correction image group comprises a plurality of second correction images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S3: according to the formula
Obtaining the backscattering distribution corresponding to each X-ray generation voltage, thereby obtaining a backscattering model consisting of a plurality of backscattering distributions; wherein Psn is a backscatter distribution corresponding to an X-ray generation voltage, P1n is a first correction image with a backscatter artifact corresponding to the X-ray generation voltage in the first correction image group, and P2n is a second correction image without a backscatter artifact corresponding to the X-ray generation voltage in the second correction image group.
2. The backscatter model generation method of claim 1, wherein the method of obtaining the first set of calibration images comprises:
step S11: when no X-ray radiation exists, the first flat panel detector carries out image acquisition to obtain a first dark field image;
step S12: under different X-ray generation voltages, a first flat panel detector is adopted to respectively shoot and image an object to be imaged to obtain a first original image group, wherein the first original image group comprises a plurality of first original images with backscattering artifacts, which correspond to the different X-ray generation voltages;
step S13: according to the formula P1 n-P1 yn-offset _ map1, a first corrected image with backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a first corrected image group consisting of a plurality of first corrected images, wherein P1n is the first corrected image corresponding to one X-ray generation voltage, P1yn is the first original image corresponding to the X-ray generation voltage in the first original image group, and offset _ map1 is the first dark field image.
3. The method of generating a backscatter model according to claim 1, wherein the step of obtaining the second set of correction images comprises:
step S21: when no X-ray radiation exists, the second flat panel detector carries out image acquisition to obtain a second dark field image;
step S22: under the same X-ray generation voltage in the synchronization step S1, shooting and imaging the object to be imaged respectively by using a second flat panel detector to obtain a second original image group, wherein the second original image group comprises a plurality of second original images which are not provided with backscattering artifacts and correspond to different X-ray generation voltages;
step S23: according to the formula P2 n-P2 yn-offset _ map2, a second correction image without backscattering artifact corresponding to each X-ray generation voltage is obtained, so as to obtain a second correction image group consisting of a plurality of second correction images, wherein P2n is the second correction image corresponding to one X-ray generation voltage, P2yn is the second original image corresponding to the X-ray generation voltage in the second original image group, and offset _ map2 is the second dark field image.
4. The backscatter model generation method of claim 1, 2 or 3 wherein the voltage range of the different X-ray generation voltages is 40kV to 150kV and the interval between two adjacent X-ray generation voltages is 1 kV.
5. The backscatter model generation method of claim 4, wherein the voltage range of the different X-ray generation voltages is 60kV to 150kV and the interval between two adjacent X-ray generation voltages is 10 kV.
6. A method as claimed in claim 1 or 3, wherein an anti-back-scattering layer is provided between the TFT photo-sensitive panel and the PCBA of the second flat panel detector, wherein the material of the anti-back-scattering layer is lead rubber.
7. The method of claim 6, wherein a back-scattering prevention layer is added between the TFT photo-sensitive panel and the PCBA of the first flat panel detector to form the second flat panel detector; wherein, the material of the back scattering prevention layer is lead rubber.
8. An imaging system, characterized in that the imaging system comprises:
a first flat panel detector;
the upper computer is connected with the first flat panel detector;
wherein a backscatter model generated by the generation method according to any one of claims 1 to 6 is prestored in the first flat panel detector or the upper computer.
9. A method for removing backscattering artifacts using the imaging system of claim 8, the method comprising:
step 1) presetting shooting parameters, and under the condition of presetting X-ray generation voltage, adopting a first flat detector to shoot, image and process an object to be imaged to obtain an image to be processed with a back scattering artifact;
step 2) calling back scattering distribution corresponding to the preset X-ray generation voltage from a back scattering model according to the preset X-ray generation voltage;
and 3) processing the backscattering artifact of the image to be processed according to a formula Px (Px 1X) (1-Psn ') to obtain a final image without the backscattering artifact, wherein Px is the final image, Px1 is the image to be processed, and Psn' is backscattering distribution corresponding to the preset X-ray generation voltage in the backscattering model.
10. The method of removing backscattering artifacts of claim 9, wherein obtaining the image to be processed comprises:
step 11) shooting and imaging an object to be imaged by adopting a first flat panel detector under a preset X-ray generating voltage to obtain an original image with a back scattering artifact;
step 12) obtaining an image to be processed according to a formula Px 1-Pxy-offset _ map1, where Px1 is the image to be processed, Pxy is the original image, and offset _ map1 is the first dark field image.
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| CN101254108A (en) * | 2007-03-02 | 2008-09-03 | 通用电气公司 | Light firm digital X ray detector |
| CN102232839A (en) * | 2010-04-30 | 2011-11-09 | 富士胶片株式会社 | Movable radiation image detection device |
| US20120312997A1 (en) * | 2011-06-07 | 2012-12-13 | Fujifilm Corporation | Radiation image detecting device |
| US20130329862A1 (en) * | 2012-06-12 | 2013-12-12 | University Of Rochester | Backscatter reduction device (bsr) |
| CN104508514A (en) * | 2012-08-08 | 2015-04-08 | 通用电气公司 | Digital X-ray detector assembly with elastomeric backscatter shield |
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| CN107822650A (en) | 2018-03-23 |
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