CN107820363A - Circuit structure preparation method and circuit structure - Google Patents
Circuit structure preparation method and circuit structure Download PDFInfo
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- CN107820363A CN107820363A CN201711210215.6A CN201711210215A CN107820363A CN 107820363 A CN107820363 A CN 107820363A CN 201711210215 A CN201711210215 A CN 201711210215A CN 107820363 A CN107820363 A CN 107820363A
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- glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
Abstract
The present invention proposes that a kind of circuit structure preparation method and circuit structure, this method comprise the following steps：S1：One inorganic material substrate is provided；S2：An at least surface for the inorganic material substrate is polished；S3：Electromagnetic irradiation is carried out to the polished surface of the inorganic material substrate according to circuit shape to be formed, the figure formed after irradiation；S4：Activate the polished surface for comprising at least the figure after irradiating of the inorganic material substrate；S5：Electroplated on figure after the irradiation of activation or change the plating coat of metal, form circuit.The circuit structure preparation method and circuit structure of the present invention, without using metallic compound or metallic media, yield is high, and link performance is good.
Description
Technical field
The present invention relates to electronic circuit technology field, more particularly to a kind of circuit structure preparation method and circuit knot
Structure.
Background technology
Current stereo circuit preparation method, main flow be laser direct organization (LDS) and common plasticses laser activation after
Change plating.Applicable substrate more limits to, typically plastic base, is not suitable for the inorganic material such as ceramics, glass.
Industrial glass is high attractive in appearance also in electric terminal equipment is widely used in due to hardness.Likewise, ceramics are also just
Gradually it is applied in electric terminal equipment, such as phone housing.Industrial ceramic is with aluminum oxide, magnesia, zirconium oxide, oxidation
The synthetic compounds such as lead, titanium oxide, carborundum, boron carbide, silicon nitride, boron nitride are raw material, using traditional or special side
Method is crushed, shaped, being formed through high-temperature firing.
In order to reach lightweight and improve radio-frequency performance, antenna traces, which are made on the shell of terminal device, can save sky
Between and parts.However, current circuit production technique has some limitations.
1. in the Publication No. CN1518850A of Patent Office of the People's Republic of China patent application document, one is disclosed completely not
The method that circuit is directly made on conductive loading material is laser direct organization (LDS), that is, uses and contain certain metallic compound
Non-conductive loading material shaped article, metal crystal nuclei is then discharged by electromagnetic radiation, then metallized.Shortcoming is 1)
Due to needing to add metallic compound, the physical property of non-conductive loading material certainly will be influenceed, as added metal oxidation in plastics
It thing, can decline its impact resistance；2) ceramics are more sensitive to the species and ratio of impurity, and LDS is added with metallic compound
Agent can influence the crystal structure and color of ceramic material, so as to influence product mechanical performance and outward appearance as impurity；3) additive
Extra cost can be increased.
2. in the Application No. CN201180033366.3 of Patent Office of the People's Republic of China patent application document, disclose it is a kind of into
The manufacture method of type circuit block, forming step include：Shaping synthetic resin carries out laser roughening and surface as matrix, matrix
It is modified, then ionic catalysis is carried out, ionic catalyst is reduced to metal, then progress plating forms circuit part.Shortcoming is this side
Case is directed to synthetic resin, and the inorganic material such as ceramics has very big difference with synthetic resin in molecular composition, material composition, can not
The selective metallization of inorganic material is completed according to this scheme.
3. in the Application No. CN201310333483.2 of Patent Office of the People's Republic of China patent application document, a kind of electricity is disclosed
The manufacture method of sub-circuit, manufacturing step include：Prepare the circuit carrier of nonmetallic materials, electromagnetic irradiation, chemical surface adjustment
Processing, change plating.The shortcomings that this scheme is that the product surface that nonmetallic materials are formed is due to coarse, after electromagnetic irradiation, irradiates table
Face can not form big difference with not irradiating surface nature, so as to increase the difficulty of chemical surface adjustment processing, easily produce excessive
Plating.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of circuit structure preparation method and circuit structure, without using
Metallic compound or metallic media, yield is high, and link performance is good.
To solve the above problems, the present invention proposes a kind of circuit structure preparation method, comprise the following steps：
S1：One inorganic material substrate is provided；
S2：An at least surface for the inorganic material substrate is polished；
S3：Electromagnetic irradiation is carried out to the polished surface of the inorganic material substrate according to circuit shape to be formed, is formed and shone
Figure after penetrating；
S4：Activate the polished surface for comprising at least the figure after irradiating of the inorganic material substrate；
S5：Electroplated on figure after the irradiation of activation or change the plating coat of metal, form circuit.
According to one embodiment of present invention, step S21 is also included between the step S2 and step S3：
The inorganic material substrate is cleaned by washing process, to remove the metal ion of polished surface.Its benefit is to keep away
Exempt from plating of being overflow caused by metal ion.
According to one embodiment of present invention, step S22 is also included between the step S2 and step S3：
Organic film or hydrophobic film layer are formed in the polished surface of the inorganic material substrate；Or in the inorganic material
Expect that the polished surface of substrate forms inorganic film more smooth than inorganic material substrate and finer and close；
In step s3, the organic film of the figure after irradiation or hydrophobic film layer or inorganic film are removed, rather than
The organic film or hydrophobic film layer or inorganic film in electromagnetic irradiation region retain.Its benefit is further to avoid plating of overflowing, and can be with
Widening plates window, and due to being not concerned about plating of overflowing, liquid medicine field of activity can suitably relax.
According to one embodiment of present invention, step S6 is also included after the step S5：
The metal coating surface is polished.
According to one embodiment of present invention, before the step S3 or after the step S5, in addition to step
Rapid S7：
Macromolecule membranous layer or enhancing harden structure are formed on one or more surfaces of the inorganic material substrate.
According to one embodiment of present invention, the inorganic material substrate is glass material plate, or ceramic material plate, or
The substrate that person is formed in metal plate or high polymer material plate body surface enamel or low firing enamel.
According to one embodiment of present invention, the glass material plate includes chalcogenide glass, halide glass, glassy silicate
Glass, borate glass, phosphate glass, quartz glass, vagcor, soda-lime glass, lead silicate glass, alumino-silicate glass
Glass, borosilicate glass, phosphate glass.
According to one embodiment of present invention, the saw lumber of the ceramic material plate is zirconium oxide, aluminum oxide, silicon nitride, carbon
A kind of material or several mixing materials in SiClx, boron nitride, tin oxide, silica, magnesia.
According to one embodiment of present invention, the saw lumber of the ceramic material plate is nano ceramics or ceramic base composite wood
Material.
According to one embodiment of present invention, the dielectric constant of the inorganic material substrate is under 1MHz to 10GHz frequency ranges
For 3.6~100.
According to one embodiment of present invention, the coat of metal is layers of copper, or, the layers of copper and silver successively plated successively
Layer, or, the layers of copper and nickel dam successively plated successively, or, layers of copper, nickel dam and the layer gold successively plated successively, or, successively successively
Nickel dam, layers of copper and the nickel dam of plating, or, nickel dam, layers of copper and the silver layer successively plated successively, or, nickel dam, the copper successively plated successively
Layer and nickel dam, or, nickel dam, layers of copper, nickel dam and the layer gold successively plated successively.
According to one embodiment of present invention, the energy range that polished surface carries out electromagnetic irradiation is 10W~500W, electromagnetism
Velocity interval 50mm/ seconds~6000mm/ seconds are irradiated, frequency range is 10KHz~100KHz；Figure after irradiation is shone by electromagnetism
Once or more is penetrated to be formed.
According to one embodiment of present invention, the inorganic material substrate is connected as one with an at least sheet of metallic material
Plate.
The present invention also provides a kind of circuit structure, including：Inorganic material substrate with an at least polished surface；The nothing
Pass through radium-shine formation formed with line pattern, the line pattern on the polished surface of machine material substrate；And formed described
The coat of metal on line pattern.
According to one embodiment of present invention, the inorganic material substrate polished surface logicalnot circuit graphics field shape
Into organic film or hydrophobic film layer；Or the logicalnot circuit graphics field of the polished surface in the inorganic material substrate forms ratio
The more smooth and finer and close inorganic film of inorganic material substrate.
According to one embodiment of present invention, in the one or more of the inorganic material substrate formed with the coat of metal
Macromolecule membranous layer or enhancing harden structure are formed on individual surface.
According to one embodiment of present invention, the inorganic material substrate is glass material plate, or ceramic material plate, or
The substrate that person is formed in metal plate or high polymer material plate body surface enamel or low firing enamel.
According to one embodiment of present invention, the glass material plate includes chalcogenide glass, halide glass, glassy silicate
Glass, borate glass, phosphate glass, quartz glass, vagcor, soda-lime glass, lead silicate glass, alumino-silicate glass
Glass, borosilicate glass, phosphate glass.
According to one embodiment of present invention, the saw lumber of the ceramic material plate is zirconium oxide, aluminum oxide, silicon nitride, carbon
A kind of material or several mixing materials in SiClx, boron nitride, tin oxide, silica, magnesia.
According to one embodiment of present invention, the saw lumber of the ceramic material plate is nano ceramics or ceramic base composite wood
Material.
According to one embodiment of present invention, the dielectric constant of the inorganic material substrate is under 1MHz to 10GHz frequency ranges
For 3.6~100.
According to one embodiment of present invention, the coat of metal is layers of copper, or, the layers of copper and silver successively plated successively
Layer, or, the layers of copper and nickel dam successively plated successively, or, layers of copper, nickel dam and the layer gold successively plated successively, or, successively successively
Nickel dam, layers of copper and the nickel dam of plating, or, nickel dam, layers of copper and the silver layer successively plated successively, or, nickel dam, the copper successively plated successively
Layer and nickel dam, or, nickel dam, layers of copper, nickel dam and the layer gold successively plated successively.
According to one embodiment of present invention, the inorganic material substrate and it is connected to become one with an at least sheet of metallic material
Body plate.
After adopting the above technical scheme, the present invention has the advantages that compared with prior art：
The present invention makes circuit thereon using inorganic material as substrate, by being polished place to inorganic material substrate
Reason, its surface roughness is set to be reduced to 1 micron or less than 1 micron, the surface after polishing is not easy deposition or adsorbing metal ions,
And when subsequently electromagnetic irradiation performs, the graphics field after irradiation can be modified, and surface roughness greatly increases, therefore non-electromagnetism shines
The roughness for penetrating region and the graphics field after laser irradiation forms very big difference so that activation and change plating operation afterwards
Window is bigger, thus yield is high, cost-effective without frequently detection replacing liquid medicine, also, the non-electromagnetism irradiation area of polished surface
It can only be plated due to not depositing substantially or adsorbing metal ions, during upper plating in figure after irradiation, be not in the asking of plating of overflowing
Topic, and by activation, activated metal layer can be formed on figure pointedly after irradiation, electroplate thereon or changing plating metal
Extremely it is liable to stick to the patterned surface after irradiation and forms the coat of metal, without sets metallic compound in inorganic material substrate
Or metallic media helps to plate, impurity is reduced to the crystal structure of product and the influence of outward appearance, is particularly suitable as electronics
The shell of equipment so that be furnished with circuit simultaneously on shell, while ensure the radio-frequency performance of circuit.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the circuit structure preparation method of one embodiment of the invention；
Fig. 2 is the schematic flow sheet of the circuit structure preparation method of another embodiment of the present invention；
Fig. 3 is the schematic flow sheet of the circuit structure preparation method of further embodiment of this invention；
Fig. 4 is the structural representation of the inorganic material substrate of one embodiment of the invention；
Fig. 5 a are the structural representation formed with line pattern on the inorganic material substrate of one embodiment of the invention；
Fig. 5 b are the cross-sectional view formed with line pattern on the inorganic material substrate of one embodiment of the invention；
Fig. 6 a are the structural representation of the circuit structure of one embodiment of the invention；
Fig. 6 b are the cross-sectional view of the circuit structure of one embodiment of the invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Many details are elaborated in the following description in order to fully understand the present invention.But the present invention can be with
Much it is different from other manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not limited to the specific embodiments disclosed below.
Referring to Fig. 1, in one embodiment, circuit structure preparation method comprises the following steps：
S1：One inorganic material substrate is provided；
S2：An at least surface for the inorganic material substrate is polished；Because inorganic material is hard with respect to organic material
Degree is high, and easily polishing forms the face of low roughness, and so as to improve the difference of surface and burnishing surface after electromagnetic radiation, it is difficult to reduce activation
Degree, reduce plating of overflowing.
S3：Electromagnetic irradiation is carried out to the polished surface of the inorganic material substrate according to circuit shape to be formed, is formed and shone
Figure after penetrating；
S4：Activate the polished surface for comprising at least the figure after irradiating of the inorganic material substrate；
S5：Electroplated on figure after the irradiation of activation or change the plating coat of metal, form circuit.
The circuit structure preparation method of the embodiment of the present invention is carried out with reference to Fig. 1,4,5a, 5b, 6a and 6b more specific
Description, but should not be as limit.
Step S1 is first carried out, referring to Fig. 1 and Fig. 4, there is provided an inorganic material substrate 1, the inorganic material substrate 1 have one
Fixed stereochemical structure, thus gas, liquid inorganic material are clearly to be not suitable for that substrate is made, in other words the present embodiment is inorganic
Material substrate 1 is made up of solid inorganic material.
Then step S2 is performed, an at least surface for inorganic material substrate 1 is polished, such as the nothing shown in Fig. 4
Machine material substrate 1, it is processed by shot blasting in the upper surface of inorganic material substrate, naturally it is also possible to also together polish other surfaces
Processing.Polishing can be physics polishing or chemical polishing, and specific glossing is unlimited, as long as can be by the inorganic material of cooperation
Expect substrate surface polishing, reduce surface roughness.The surface roughness of polished surface preferably can be at 1 micron or 1 micron
Hereinafter, the polished surface under the surface roughness is not easy deposition or adsorbing metal ions.
Then step S3 is performed, referring to Fig. 1,5a and 5b, after polishing, according to circuit shape to be formed to inorganic material
The polished surface of substrate 1 carries out electromagnetic irradiation, and the figure formed after irradiation, the figure after irradiation can be with the shape of line pattern 11
Formula is present.Electromagnetic irradiation can be realized using existing electromagnetic irradiation device, the figure after irradiation is according to circuit shape to be formed
Depending on, depend on the needs, it is specific unlimited.Polished surface is corrupted such that electromagnetic irradiation region and non-electromagnetism after electromagnetic irradiation
The roughness of irradiation area forms very big difference, and in other words, the roughness in electromagnetic irradiation region is compared to polished surface meeting
Greatly increase.
Then step S4, the polished surface for comprising at least the figure after irradiating of activation inorganic material substrate 1, purpose are performed
It is that the figure after irradiation is activated.Whole inorganic material substrate activating process can be subjected to, only table can also be will polished
Face carries out activating process, provided of course that being activated for radiating pattern, thus is not necessarily required to carry out whole polished surface
Activating process.Activating process can be the technique that chemical activation is carried out using activator, for example with palladium activator to inorganic material
Expect that substrate 1 carries out palladium activation so that in the figure of Metal Palladium attachment after irradiation, form a palladium metal layer, be also not necessarily limited to certainly
This, if can it is activated after irradiate after figure in formed one layer of activated metal layer.Although the area that activation process is directed to
The region that the figure after penetrating is contrasted in domain is big, still, because the surface roughness of polished surface is significantly smaller than the figure after irradiation
Surface roughness, thus substantially only have the figure after irradiating to be activated, activated metal layer is formed in the figure after only irradiating,
Do not deposited substantially on the non-electromagnetism irradiation area of polished surface or adsorbing metal ions.
Preferably, the energy range that polished surface carries out electromagnetic irradiation is 10W~500W, electromagnetic irradiation velocity interval
50mm/ seconds~6000mm/ seconds, frequency range are 10KHz~100KHz；Figure after irradiation by electromagnetic irradiation once or once
It is formed above.It can make it that the line pattern structure that electromagnetic irradiation is formed is more regular, ensure that circuit is more regular smooth, lift circuit
Radio-frequency performance.
Then step S5 is performed, is electroplated referring to Fig. 1,6a and 6b, on the figure after the irradiation of activation or changes plating metal-plated
Layer 2, circuit is formed, that is, electroplated on line pattern or change plating metal and form the coat of metal 2.Due to the activation gold after activation
Category layer can be only deposited in figure after irradiation, and then can thereon electroplated based on activated metal layer or changed plating metal
Extremely it is liable to stick to the patterned surface after irradiation and forms the coat of metal, upper plating is very easy to, without in inorganic material substrate 1
Metallic compound or metallic media is set to help to plate.
Preferably, the coat of metal 2 is layers of copper, or, the layers of copper and silver layer successively plated successively, or, successively plate successively
Layers of copper and nickel dam, or, layers of copper, nickel dam and the layer gold successively plated successively, or, nickel dam, layers of copper and the nickel dam successively plated successively,
Or nickel dam, layers of copper and the silver layer successively plated successively, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, successively first
Nickel dam, layers of copper, nickel dam and the layer gold plated afterwards.Metal coating surface need not carry out ink for screen printing layer and carry out protective coating, by layers of copper,
Nickel dam etc. is played a protective role, and structure and technique are simplified.
The present invention makes circuit thereon using inorganic material as substrate, by being polished to inorganic material substrate 1
Processing, its surface roughness is reduced to 1 micron or less than 1 micron, the surface after polishing be not easy to deposit or adsorbing metal from
Son, and during follow-up electromagnetic irradiation execution, the graphics field after irradiation can be modified, and surface roughness greatly increases, therefore non-electrical
Magnetic irradiation area and the roughness of the graphics field after laser irradiation form very big difference so that activation and change plating afterwards
Action pane is bigger, thus yield is high, cost-effective without frequently detection replacing liquid medicine, also, the non-electromagnetic irradiation of polished surface
Region can be only plated due to not depositing substantially or adsorbing metal ions, during upper plating in figure after irradiation, be not in excessive plating
The problem of, and by activation, activated metal layer can be formed on figure pointedly after irradiation, electroplate thereon or changing plating
Metal is extremely liable to stick to the patterned surface after irradiation and forms the coat of metal, without setting metal in inorganic material substrate 1
Compound or metallic media help to plate, and reduce impurity to the crystal structure of product and the influence of outward appearance, are especially suitable for making
For the shell of electronic equipment so that be furnished with circuit simultaneously on shell, while ensure the radio-frequency performance of circuit.
In another embodiment, referring to Fig. 2, step S6 is also included after step s 5：The surface of the coat of metal 2 is carried out
Polishing.The surface of the coat of metal 2 reduces surface roughness by chemical polishing or physics polishing, removes metallic bur power and surface is residual
Metallic dust is stayed, lifts radio-frequency performance.The other guide of the present embodiment may refer to the description in previous embodiment, herein no longer
Repeat.
In yet another embodiment, before the step S3 or after the step S5, in addition to step S7：
Macromolecule membranous layer or enhancing harden structure are formed on one or more surfaces of the inorganic material substrate 1.Referring to Fig. 3, step
Perform, can also perform after step s 5 after the step 6 that S7 can be in the aforementioned embodiment.In the table of inorganic material substrate 1
Face sets macromolecule membranous layer or enhancing harden structure, can increase the impact strength of inorganic material substrate 1 so that it is as electronics
The housing of equipment or other when, impact resistance is higher, and mechanical performance is stronger.The other guide of the present embodiment may refer to foregoing
Description in embodiment, will not be repeated here.The macromolecule membranous layer or enhancing harden structure of formation can avoid the figure after irradiation
Region.The macromolecule membranous layer such as protective paint sprayed, enhancing plate can be the high polymer material or fiberboard being glued.
In one embodiment, step S21 is also included between step S2 and step S3：Cleaned by washing process inorganic
Material substrate 1, to remove the metal ion of polished surface.Avoid the generation of later stage excessive plating.Inorganic material substrate 1 after polishing
Surface roughness is low, and remaining superincumbent metal ion can be easy to remove totally by washing, and avoids to follow-up upper plating
Influence.The technique such as can be ultrasonic wave water washing is washed, it is specific unlimited.
In one embodiment, step S22 is also included between the step S2 and step S3：In the inorganic material
The polished surface of substrate 1 forms organic film or hydrophobic film layer；Or form ratio in the polished surface of the inorganic material substrate
The more smooth and finer and close inorganic film of inorganic material substrate 1.In the present embodiment, in then step S3 is performed, after irradiation
Figure the organic film or hydrophobic film layer or inorganic film be removed, rather than the organic film in electromagnetic irradiation region or dredge
Water film or inorganic film retain.During being irradiated in laser and electromagnetic, electromagnetic irradiation region organic film or hydrophobic membrane
Layer or inorganic film will be removed clean, and not influence the figure subsequently absorption to metal ion after irradiation, rather than electromagnetism shines
Penetrate organic film or hydrophobic film layer or the inorganic film reservation in region, it is possible to reduce or avoid adsorption of metal ions from being shone in non-electromagnetism
Penetrate region.Hydrophobic film layer material can use poly- fluorocarbons and organic siliconresin.
Preferably, inorganic material substrate 1 can be glass material plate, either ceramic material plate or in metal plate or
The substrate that high polymer material plate body surface enamel or low firing enamel are formed.Ceramics and glass product, due to ceramics and glass product
Surface higher molecular compound is hard, and is adapted to polishing, is more suitable for making the terminal enclosure for having circuit.
The saw lumber of glass material plate can be nonoxide glass or oxide glass.Specifically, nonoxide glass product
Kind and negligible amounts, chalcogenide glass, halide glass can be included.Oxide glass can include silicate glass, borate
Glass, phosphate glass, quartz glass, vagcor, soda-lime glass, lead silicate glass, alumina silicate glass, borosilicic acid
Salt glass, phosphate glass.It is certainly not limited to this.
Preferably, the saw lumber of ceramic material plate is zirconium oxide, aluminum oxide, silicon nitride, carborundum, boron nitride, tin oxide, oxygen
A kind of material or several mixing materials in SiClx, magnesia.
Preferably, the saw lumber of ceramic material plate is nano ceramics or ceramic matric composite.Material is more careful, is more easy to throw
Light, more solid, appearance consistency is higher.Ceramic matric composite can be several formation of the saw lumber of above-mentioned ceramic material plate
Composite construction, but it is also not necessarily limited to this.
Preferably, the dielectric constant of inorganic material substrate 1 is 3.6~100 under 1MHz to 10GHz frequency ranges.
In one embodiment, inorganic material substrate 1 and it is connected as one plate with an at least sheet of metallic material.With nothing
Machine material substrate 1 is exemplified by ceramic material, sheet of metallic material and ceramic material substrate can be sintered together, and can also use glue
Water can also make metal by together with sheet of metallic material and ceramic material substrate bonding in four corners of ceramic material substrate
Material structure (size is unlimited), improve impact resistance.Integral plate is more suitable for antenna traces being made in terminal thereon
Device housings, space and parts can be saved.
Referring to Fig. 4,5a, 5b, 6a and 6b, in one embodiment, circuit structure includes：With an at least polished surface
Inorganic material substrate；Pass through electromagnetism formed with line pattern, the line pattern on the polished surface of the inorganic material substrate
Irradiation is formed；And form the coat of metal on the line pattern.Circuit of the coat of metal as circuit structure.
The inorganic material substrate 1 has certain stereochemical structure, thus gas, liquid inorganic material are clearly to be not suitable for system
Into substrate, in other words the inorganic material substrate 1 of the present embodiment is made up of solid inorganic material.
The polished surface of inorganic material substrate 1 can be formed by glossing.Such as the inorganic material base shown in Fig. 4
Plate 1, it is processed by shot blasting in the upper surface of inorganic material substrate 1, naturally it is also possible to by other surfaces also together polishing.Throw
Light processing can be physics polishing or chemical polishing, and specific glossing is unlimited, as long as can be by the inorganic material substrate 1 of cooperation
Surface polishes, and reduces surface roughness.The surface roughness of polished surface preferably can be at 1 micron or less than 1 micron, should
Polished surface under surface roughness is not easy deposition or adsorbing metal ions.
Electromagnetic irradiation technique is existing process, electromagnetic irradiation can be realized using existing electromagnetic irradiation device, after irradiation
Figure depending on circuit shape to be formed, depend on the needs, it is specific unlimited.
Polished surface is corrupted such that the roughness shape of electromagnetic irradiation region and non-electromagnetism irradiation area after electromagnetic irradiation
Into very big difference, in other words, the roughness in electromagnetic irradiation region can greatly increase compared to polished surface, be advantageous to circuit
The upper plating of the coat of metal 2 in figure 11, the impurity that plates is reduced on helping to the crystal structure of product and the influence of outward appearance, especially
It is suitable as the shell of electronic equipment so that be furnished with circuit simultaneously on shell, while ensure the radio-frequency performance of circuit；And polishing
Do not deposited substantially on the non-electromagnetism irradiation area on surface or adsorbing metal ions, avoid plating problem of overflowing, yield is improved, without frequent
It is cost-effective that liquid medicine is changed in detection.
Organic film or hydrophobic film layer are formed in the logicalnot circuit graphics field of the polished surface of the inorganic material substrate 1；
Or the inorganic material substrate 1 polished surface logicalnot circuit graphics field formed it is more smooth than inorganic material substrate 1 and
Finer and close inorganic film.During being irradiated in laser and electromagnetic, electromagnetic irradiation region organic film or hydrophobic film layer or
Inorganic film will be removed clean, and not influence the figure subsequently absorption to metal ion after irradiation, rather than electromagnetic irradiation area
The organic film or hydrophobic film layer or inorganic film in domain retain, it is possible to reduce or adsorption of metal ions is avoided in non-electromagnetism irradiated region
Domain.
In one embodiment, on one or more surfaces of the inorganic material substrate 1 formed with the coat of metal 2
Upper formation macromolecule membranous layer or enhancing harden structure (not shown).The surface of inorganic material substrate 1 set macromolecule membranous layer or
Strengthen harden structure, the impact strength of inorganic material substrate can be increased so that it is as the housing of electronic equipment or other knots
During structure, impact resistance is higher, and mechanical performance is stronger.Macromolecule membranous layer or enhancing harden structure can be formed in organic film or dredged
On water film or inorganic film and the coat of metal, it can also be formed on polished surface and the coat of metal.
Preferably, inorganic material substrate 1 can be glass material plate, either ceramic material plate or in metal plate or
The substrate that high polymer material plate body surface enamel or low firing enamel are formed.Ceramics and glass product, due to ceramics and glass product
Surface higher molecular compound is hard, and is adapted to polishing, is more suitable for making the terminal enclosure for having circuit.
The saw lumber of glass material plate can be nonoxide glass or oxide glass.Specifically, nonoxide glass product
Kind and negligible amounts, chalcogenide glass, halide glass can be included.Oxide glass can include silicate glass, borate
Glass, phosphate glass, quartz glass, vagcor, soda-lime glass, lead silicate glass, alumina silicate glass, borosilicic acid
Salt glass, phosphate glass.It is certainly not limited to this.
Preferably, the saw lumber of ceramic material plate is zirconium oxide, aluminum oxide, silicon nitride, carborundum, boron nitride, tin oxide, oxygen
A kind of material or several mixing materials in SiClx, magnesia.
Preferably, the saw lumber of ceramic material plate is nano ceramics or ceramic matric composite.Material is more careful, is more easy to throw
Light, more solid, appearance consistency is higher.Ceramic matric composite can be several formation of the saw lumber of above-mentioned ceramic material plate
Composite construction, but it is also not necessarily limited to this.
Preferably, the dielectric constant of inorganic material substrate 1 is 3.6~100.
Preferably, the coat of metal is layers of copper, or, the layers of copper and silver layer successively plated successively, or, the copper successively plated successively
Layer and nickel dam, or, layers of copper, nickel dam and the layer gold successively plated successively, or, nickel dam, layers of copper and the nickel dam successively plated successively, or
Person, nickel dam, layers of copper and the silver layer successively plated successively, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, successively successively
Nickel dam, layers of copper, nickel dam and the layer gold of plating.Metal coating surface need not carry out ink for screen printing layer and carry out protective coating, pass through layers of copper, nickel
Layer etc. is played a protective role, and structure and technique are simplified.
In one embodiment, inorganic material substrate 1 and it is connected as one plate with an at least sheet of metallic material.With nothing
Machine material substrate is exemplified by ceramic material, sheet of metallic material and ceramic material substrate can be sintered together, and can also use glue
Water can also make metal by together with sheet of metallic material and ceramic material substrate bonding in four corners of ceramic material substrate
Material structure (size is unlimited), improve impact resistance.Integral plate is more suitable for antenna traces being made in terminal thereon
Device housings, space and parts can be saved.
Particular content on the circuit structure of the embodiment of the present invention may refer to aforementioned circuit construction manufacturing method part
Detailed description, circuit structure can be fabricated by the circuit structure preparation method of previous embodiment, herein no longer
Repeat.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting claim, any this area
Technical staff without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the present invention
Protection domain should be defined by the scope that the claims in the present invention are defined.
Claims (23)
1. a kind of circuit structure preparation method, it is characterised in that comprise the following steps：
S1：One inorganic material substrate is provided；
S2：An at least surface for the inorganic material substrate is polished；
S3：Electromagnetic irradiation is carried out to the polished surface of the inorganic material substrate according to circuit shape to be formed, after forming irradiation
Figure；
S4：Activate the polished surface for comprising at least the figure after irradiating of the inorganic material substrate；
S5：Electroplated on figure after the irradiation of activation or change the plating coat of metal, form circuit.
2. circuit structure preparation method as claimed in claim 1, it is characterised in that between the step S2 and step S3 also
Including step S21：
The inorganic material substrate is cleaned by washing process, to remove the metal ion of polished surface.
3. circuit structure preparation method as claimed in claim 1, it is characterised in that between the step S2 and step S3 also
Including step S22：
Organic film or hydrophobic film layer are formed in the polished surface of the inorganic material substrate；Or in the inorganic material base
The polished surface of plate forms inorganic film more smooth than inorganic material substrate and finer and close；
In step s3, the organic film of the figure after irradiation or hydrophobic film layer or inorganic film are removed, rather than electromagnetism
The organic film or hydrophobic film layer or inorganic film of irradiation area retain.
4. circuit structure preparation method as claimed in claim 1, it is characterised in that also include step after the step S5
S6：
The metal coating surface is polished.
5. circuit structure preparation method as claimed in claim 1, it is characterised in that before the step S3 or described
After step S5, in addition to step S7：
Macromolecule membranous layer or enhancing harden structure are formed on one or more surfaces of the inorganic material substrate.
6. the circuit structure preparation method as described in any one in claim 1-5, it is characterised in that the inorganic material base
Plate is glass material plate, either ceramic material plate or is warded off in metal plate or high polymer material plate body surface enamel or low temperature
The substrate that porcelain is formed.
7. circuit structure preparation method as claimed in claim 6, it is characterised in that the glass material plate includes sulphur system glass
Glass, halide glass, silicate glass, borate glass, phosphate glass, quartz glass, vagcor, soda-lime glass,
Lead silicate glass, alumina silicate glass, borosilicate glass, phosphate glass.
8. circuit structure preparation method as claimed in claim 6, it is characterised in that the saw lumber of the ceramic material plate is oxidation
A kind of material or several mixing materials in zirconium, aluminum oxide, silicon nitride, carborundum, boron nitride, tin oxide, silica, magnesia
Material.
9. circuit structure preparation method as claimed in claim 6, it is characterised in that the saw lumber of the ceramic material plate is nanometer
Ceramics or ceramic matric composite.
10. the circuit structure preparation method as described in any one in claim 1-5, it is characterised in that the inorganic material
The dielectric constant of substrate is 3.6~100 under 1MHz to 10GHz frequency ranges.
11. the circuit structure preparation method as described in any one in claim 1-5, it is characterised in that the coat of metal
For layers of copper, or, the layers of copper and silver layer of successively plating successively, or, the layers of copper and nickel dam of successively plating successively, or, successively successively
Layers of copper, nickel dam and the layer gold of plating, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, nickel dam, the copper successively plated successively
Layer and silver layer, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, nickel dam, layers of copper, nickel dam and the gold successively plated successively
Layer.
12. the circuit structure preparation method as described in any one in claim 1-5, it is characterised in that polished surface is carried out
The energy range of electromagnetic irradiation is 10W~500W, and the electromagnetic irradiation velocity interval 50mm/ seconds~6000mm/ seconds, frequency range is
10KHz~100KHz；Figure after irradiation is formed by electromagnetic irradiation once or more.
13. the circuit structure preparation method as described in any one in claim 1-5, it is characterised in that the inorganic material
Substrate is connected as one plate with an at least sheet of metallic material.
A kind of 14. circuit structure, it is characterised in that including：Inorganic material substrate with an at least polished surface；It is described inorganic
Pass through radium-shine formation formed with line pattern, the line pattern on the polished surface of material substrate；And formed in the line
The coat of metal on the figure of road.
15. circuit structure as claimed in claim 14, it is characterised in that the inorganic material substrate polished surface it is non-
Line pattern region forms organic film or hydrophobic film layer；Or the logicalnot circuit of the polished surface in the inorganic material substrate
Graphics field forms inorganic film more smooth than inorganic material substrate and finer and close.
16. circuit structure as claimed in claim 14, it is characterised in that in the inorganic material base formed with the coat of metal
Macromolecule membranous layer or enhancing harden structure are formed on one or more surfaces of plate.
17. the circuit structure as described in any one in claim 14-16, it is characterised in that the inorganic material substrate is
Glass material plate, either ceramic material plate or in metal plate or high polymer material plate body surface enamel or low firing enamel shape
Into substrate.
18. circuit structure as claimed in claim 17, it is characterised in that the glass material plate includes chalcogenide glass, halogenation
Thing glass, silicate glass, borate glass, phosphate glass, quartz glass, vagcor, soda-lime glass, lead silicate
Glass, alumina silicate glass, borosilicate glass, phosphate glass.
19. circuit structure as claimed in claim 17, it is characterised in that the saw lumber of the ceramic material plate is zirconium oxide, oxygen
Change aluminium, silicon nitride, carborundum, boron nitride, tin oxide, silica, a kind of material in magnesia or several mixing materials.
20. circuit structure as claimed in claim 17, it is characterised in that the saw lumber of the ceramic material plate be nano ceramics or
Ceramic matric composite.
21. the circuit structure as described in any one in claim 14-16, it is characterised in that the inorganic material substrate
Dielectric constant is 3.6~100 under 1MHz to 10GHz frequency ranges.
22. the circuit structure as described in any one in claim 14-16, it is characterised in that the coat of metal is layers of copper,
Or successively successively plating layers of copper and silver layer, or, successively successively plating layers of copper and nickel dam, or, successively successively plating copper
Layer, nickel dam and layer gold, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, nickel dam, layers of copper and the silver successively plated successively
Layer, or, nickel dam, layers of copper and the nickel dam successively plated successively, or, nickel dam, layers of copper, nickel dam and the layer gold successively plated successively.
23. the circuit structure as described in any one in claim 14-16, it is characterised in that the inorganic material substrate and
Plate is connected as one with an at least sheet of metallic material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711210215.6A CN107820363A (en) | 2017-11-27 | 2017-11-27 | Circuit structure preparation method and circuit structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711210215.6A CN107820363A (en) | 2017-11-27 | 2017-11-27 | Circuit structure preparation method and circuit structure |
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Family
ID=61610483
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| CN201711210215.6A Pending CN107820363A (en) | 2017-11-27 | 2017-11-27 | Circuit structure preparation method and circuit structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109803499A (en) * | 2019-03-29 | 2019-05-24 | 上海安费诺永亿通讯电子有限公司 | A method of preparing electronic circuit on substrate |
| CN115058746A (en) * | 2022-07-07 | 2022-09-16 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
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|---|---|---|---|---|
| US5298685A (en) * | 1990-10-30 | 1994-03-29 | International Business Machines Corporation | Interconnection method and structure for organic circuit boards |
| CN103124470A (en) * | 2011-11-18 | 2013-05-29 | 胡泉凌 | Method for manufacturing plastic metallized three-dimensional circuit |
| CN105101656A (en) * | 2015-07-31 | 2015-11-25 | 歌尔声学股份有限公司 | Conductor line and manufacture method thereof |
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2017
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298685A (en) * | 1990-10-30 | 1994-03-29 | International Business Machines Corporation | Interconnection method and structure for organic circuit boards |
| CN103124470A (en) * | 2011-11-18 | 2013-05-29 | 胡泉凌 | Method for manufacturing plastic metallized three-dimensional circuit |
| CN105101656A (en) * | 2015-07-31 | 2015-11-25 | 歌尔声学股份有限公司 | Conductor line and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109803499A (en) * | 2019-03-29 | 2019-05-24 | 上海安费诺永亿通讯电子有限公司 | A method of preparing electronic circuit on substrate |
| CN109803499B (en) * | 2019-03-29 | 2021-10-22 | 上海安费诺永亿通讯电子有限公司 | Method for preparing electronic circuit on substrate |
| CN115058746A (en) * | 2022-07-07 | 2022-09-16 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
| CN115058746B (en) * | 2022-07-07 | 2024-04-12 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
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