CN107809230A - 隔离型振荡解调式igbt驱动电路 - Google Patents

隔离型振荡解调式igbt驱动电路 Download PDF

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Publication number
CN107809230A
CN107809230A CN201711211930.1A CN201711211930A CN107809230A CN 107809230 A CN107809230 A CN 107809230A CN 201711211930 A CN201711211930 A CN 201711211930A CN 107809230 A CN107809230 A CN 107809230A
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igbt
pulse transformer
control
additional inductor
square wave
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陈定
陈一定
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08116Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

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Abstract

隔离型振荡解调式IGBT驱动电路由脉冲变压器(T)和附加电感(L)以及IGBT组成,本发明将控制互补功率方波经兆赫级的载波调制后加于脉冲变压器(T)的初级线圈;由脉冲变压器(T)的次级线圈和附加电感(L)以及IGBT的栅极(g)‑发射极(e)组成回路;当次级回路中的等效电感量和IGBT的输入电容量匹配时,经脉冲变压器(T)传递到次级的调制波在次级回路产生振荡,在IGBT的栅极(g)‑发射极(e)上就可以解调出控制互补功率方波,从而控制IGBT的开通、断开动作。

Description

隔离型振荡解调式IGBT驱动电路
技术领域:本发明属于 MOSFET,IGBT驱动电路。
背景技术:MOSFET,IGBT都属于电容型栅极的电子器件。其驱动技术是由方波信号驱动,正驱动信号使器件导通,零(或负值)信号使器件关断。但是由于栅极的电容性,在方波施加时电压不能突变而电流会突变,故电流冲击极大,需要在栅极回路串联限流电阻。IGBT是高电压、大电流器件,而其栅极是用低电压驱动的弱电控制系统。在一个系统里可能有几个IGBT器件同时工作,若一个IGBT器件损坏,就会引起其驱动回路的损坏,进而导致整个控制系统的损坏,因此需要控制系统与驱动栅极电路的隔离。隔离较简单的方式是用变压器传递控制方波,然而控制方波的频率不高,传递变压器的体积要求较大,而且控制方波经过变压器传递到次级后会变形。因而目前的隔离型IGBT驱动电路不过是在隔离变压器的初级加载控制方波信号,而在次级再设置控制方波的整形和功率放大电路对控制方波进行功率放大,这样就需要在次级设置隔离的电源,因而次级回路很复杂。
发明内容:针对现有技术存在的缺点,本发明用兆赫级的载波对控制互补功率方波进行调制,然后将调制波加到脉冲变压器(T)的初级线圈。脉冲变压器(T)的次级线圈和附加电感(L)与IGBT的栅极(g)-发射极(e)组成回路。由于在栅极(g)和发射极(e)之间存在IGBT的输入电容,在次级就形成了LRC串联回路,传递到次级的调制波在次级回路产生振荡,当次级回路的等效电感量和IGBT的输入电容量匹配时,就能在IGBT的栅极(g)-发射极(e)上将控制互补功率方波解调出来,从而达到用控制互补功率方波控制IGBT开通、关断的目的。
本发明利用兆赫级的载波对控制互补功率方波进行调制,因而可以用很小的变压器(T)体积就可以传递较大的功率方波,而将功率放大交给了变压器的初级电路去完成,这就省掉了在次级设置所谓的“隔离的电源”,也使得次级电路极大的简化,也可以让控制系统的安全性得到提升。
本发明充分利用IGBT器件栅极(g)-发射极(e)的电容性,将栅极(g)-发射极(e)和变压器(T)的次级线圈、附加电感(L)组成LRC串联振荡电路,既限制了栅极(g)-发射极(e)的冲击电流,又将控制互补功率方波传递到栅极(g)-发射极(e)上。没有了冲击电流,只需要很小的功率就可以很好的驱动IGBT器件。
附图说明
图1是标准的隔离型振荡式解调IGBT驱动电路,图中的Zener为IGBT的栅极过电压保护二极管,R为IGBT的保护电阻,是IGBT的标准配置;图2为两路互补控制的隔离型振荡式解调IGBT驱动电路;图3为四路互补控制的隔离型振荡式解调IGBT驱动电路。
具体实施方式
1、图1为标准的隔离型振荡式解调IGBT驱动电路,它可以只输出一路控制互补功率方波控制一个IGBT器件。
2、图2为两路互补控制的隔离型振荡式解调IGBT驱动电路,它可以输出两路控制互补功率方波控制两个IGBT器件。
3、图3为四路互补控制的隔离型振荡式解调IGBT驱动电路,它可以输出四路控制互补功率方波控制四个IGBT器件。
4、本发明可以组成任意组的互补控制的隔离型振荡式解调IGBT驱动电路,输出任意组的控制互补功率方波控制任意个IGBT器件。

Claims (2)

1.隔离型振荡解调式IGBT驱动电路由脉冲变压器(T)、附加电感(L)和IGBT组成,变压器(T)的初级线圈由兆赫级载波调制的控制互补功率方波推动;脉冲变压器(T)次级线圈相应相位端和附加电感(L)的一端相连,附加电感(L)的另一端与IGBT的栅极(g)相连,IGBT的发射极(e)与脉冲变压器(T)次级线圈的另一端相连,组成次级回路;当次级回路的等效电感量和IGBT的输入电容量匹配时,由变压器初级传递到次级的调制波就会在次级回路中产生振荡,在IGBT的栅极(g)-发射极(e)上就可以解调出控制互补功率方波,从而控制IGBT的开通、断开动作。
2.脉冲变压器(T)只有一个初级线圈,但可以有任意个次级线圈,这些次级线圈可以和对应的IGBT以及对应的附加电感(L)组成任意个次级回路,当脉冲变压器(T)的功率和调制波的功率都满足要求时可以控制任意个互补工作的IGBT。
CN201711211930.1A 2017-11-28 2017-11-28 隔离型振荡解调式igbt驱动电路 Pending CN107809230A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103368363A (zh) * 2013-06-08 2013-10-23 南京劳伦斯电子科技有限公司 一种新型高频高压开关电源用igbt驱动电路
CN103595386A (zh) * 2013-11-27 2014-02-19 苏州铜威激光有限公司 氢闸流管控制栅极的驱动源
CN106026721A (zh) * 2016-07-19 2016-10-12 东南大学 一种采用SiC功率管的ZCS全桥变换器的栅驱动电路
US20160322968A1 (en) * 2013-02-27 2016-11-03 Powerest LLC High Efficiency Resonant Power Converters and Resonant Gate Drivers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160322968A1 (en) * 2013-02-27 2016-11-03 Powerest LLC High Efficiency Resonant Power Converters and Resonant Gate Drivers
CN103368363A (zh) * 2013-06-08 2013-10-23 南京劳伦斯电子科技有限公司 一种新型高频高压开关电源用igbt驱动电路
CN103595386A (zh) * 2013-11-27 2014-02-19 苏州铜威激光有限公司 氢闸流管控制栅极的驱动源
CN106026721A (zh) * 2016-07-19 2016-10-12 东南大学 一种采用SiC功率管的ZCS全桥变换器的栅驱动电路

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