CN107799640A - 一种高光效P型非极性AlN薄膜及其制备方法 - Google Patents
一种高光效P型非极性AlN薄膜及其制备方法 Download PDFInfo
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- CN107799640A CN107799640A CN201711066453.4A CN201711066453A CN107799640A CN 107799640 A CN107799640 A CN 107799640A CN 201711066453 A CN201711066453 A CN 201711066453A CN 107799640 A CN107799640 A CN 107799640A
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- aln
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- nano
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000002105 nanoparticle Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- 230000012010 growth Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 48
- 239000013078 crystal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012567 medical material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711066453.4A CN107799640B (zh) | 2017-11-02 | 2017-11-02 | 一种高光效P型非极性AlN薄膜及其制备方法 |
Applications Claiming Priority (1)
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CN201711066453.4A CN107799640B (zh) | 2017-11-02 | 2017-11-02 | 一种高光效P型非极性AlN薄膜及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN107799640A true CN107799640A (zh) | 2018-03-13 |
CN107799640B CN107799640B (zh) | 2023-12-29 |
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CN201711066453.4A Active CN107799640B (zh) | 2017-11-02 | 2017-11-02 | 一种高光效P型非极性AlN薄膜及其制备方法 |
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CN (1) | CN107799640B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807609A (zh) * | 2018-05-03 | 2018-11-13 | 五邑大学 | 金属纳米粒子修饰的图形化衬底led的制备方法 |
CN108807631A (zh) * | 2018-05-03 | 2018-11-13 | 五邑大学 | 一种双镜面结构的led外延片及其制备方法 |
CN113471060A (zh) * | 2021-05-27 | 2021-10-01 | 南昌大学 | 一种减少硅衬底上AlN薄膜微孔洞的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003174153A (ja) * | 2001-07-16 | 2003-06-20 | Semiconductor Energy Lab Co Ltd | 剥離方法および半導体装置の作製方法、および半導体装置 |
CN1665043A (zh) * | 2004-03-05 | 2005-09-07 | Tdk株式会社 | 电子元件及其制造方法 |
CN101322258A (zh) * | 2003-01-22 | 2008-12-10 | 独立行政法人产业技术综合研究所 | 压电元件及其制造方法 |
CN207474486U (zh) * | 2017-11-02 | 2018-06-08 | 五邑大学 | 一种高光效P型非极性AlN薄膜 |
-
2017
- 2017-11-02 CN CN201711066453.4A patent/CN107799640B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003174153A (ja) * | 2001-07-16 | 2003-06-20 | Semiconductor Energy Lab Co Ltd | 剥離方法および半導体装置の作製方法、および半導体装置 |
CN101322258A (zh) * | 2003-01-22 | 2008-12-10 | 独立行政法人产业技术综合研究所 | 压电元件及其制造方法 |
CN1665043A (zh) * | 2004-03-05 | 2005-09-07 | Tdk株式会社 | 电子元件及其制造方法 |
CN207474486U (zh) * | 2017-11-02 | 2018-06-08 | 五邑大学 | 一种高光效P型非极性AlN薄膜 |
Non-Patent Citations (1)
Title |
---|
S.G.ZHANG等: "optimization of elecfroluminescence from n-zno/aln/p-gan light-emitting diodes by tailoring ag localized surface plasmon" * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807609A (zh) * | 2018-05-03 | 2018-11-13 | 五邑大学 | 金属纳米粒子修饰的图形化衬底led的制备方法 |
CN108807631A (zh) * | 2018-05-03 | 2018-11-13 | 五邑大学 | 一种双镜面结构的led外延片及其制备方法 |
CN108807609B (zh) * | 2018-05-03 | 2020-07-14 | 五邑大学 | 金属纳米粒子修饰的图形化衬底led的制备方法 |
CN113471060A (zh) * | 2021-05-27 | 2021-10-01 | 南昌大学 | 一种减少硅衬底上AlN薄膜微孔洞的制备方法 |
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Publication number | Publication date |
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CN107799640B (zh) | 2023-12-29 |
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Effective date of registration: 20231129 Address after: 221000 Plant 6, Precision Manufacturing Park, Suining Economic Development Zone, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Chuandu Optoelectronic Technology Co.,Ltd. Address before: 511455 No. 106 Fengze East Road, Nansha District, Guangzhou City, Guangdong Province (self designated Building 1) X1301-A4848 (cluster registration) (JM) Applicant before: Guangzhou Zhiyou Intellectual Property Operation Co.,Ltd. Effective date of registration: 20231129 Address after: 511455 No. 106 Fengze East Road, Nansha District, Guangzhou City, Guangdong Province (self designated Building 1) X1301-A4848 (cluster registration) (JM) Applicant after: Guangzhou Zhiyou Intellectual Property Operation Co.,Ltd. Address before: 529020, No. 22, Dongcheng village, Pengjiang District, Guangdong, Jiangmen Applicant before: WUYI University |
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