CN107799624A - One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures - Google Patents
One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures Download PDFInfo
- Publication number
- CN107799624A CN107799624A CN201710802973.0A CN201710802973A CN107799624A CN 107799624 A CN107799624 A CN 107799624A CN 201710802973 A CN201710802973 A CN 201710802973A CN 107799624 A CN107799624 A CN 107799624A
- Authority
- CN
- China
- Prior art keywords
- nio
- algan
- layers
- nano
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 14
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 12
- 230000004298 light response Effects 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 4
- 239000002135 nanosheet Substances 0.000 claims description 4
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical class [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical class [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XMOKRCSXICGIDD-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O XMOKRCSXICGIDD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- -1 quickly stir Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
One kind is based on the inversion type rapid ultraviolet photoresponse device of nano NiO/AlGaN heterojunction structures, and its basalis is Sapphire Substrate；Nano NiO/AlGaN hetero structure layers include AlN high temperature buffer layers, AlGaN film layers, NiO inculating crystal layers and nano NiO laminated structure layer；Transparent contact electrode layer is the glass substrate layer for having 0.1cm raceway grooves and being coated with ito transparent electrode.And in the nano NiO/AlGaN hetero structure layers, heterojunction structure is the nano NiO laminated structure layer in the growth of n AlGaN film surfaces.Grown using low-pressure MOCVD method, first in n AlGaN superficial growth NiO inculating crystal layers, then grow NiO flaky nanometer structure layers.Finally the glass substrate of NiO flaky nanometer structures and transparency electrode is fitted and builds simple ultraviolet light response device.The product of the present invention has extraordinary photoresponse to ultraviolet light, and preparation does not need catalyst, and growth temperature is low, reproducible, simple to operate, and manufacturing cost is low.
Description
Technical field
The present invention relates to a kind of semi-conducting material and preparation method.
Background technology
As a kind of important semiconductor material with wide forbidden band, NiO materials have excellent optically and electrically characteristic, while it
With nontoxic, the cost of raw material is low, and growing method is simple.It has many unique properties, especially in electrically conducting transparent, gas
The fields such as quick, ultraviolet detection, electrochromism show its wide application prospect active material, have good application potential.
The characteristics of responsiveness is high although the ultraviolet detector that NiO nano materials make has, and property is stable, such current ultraviolet light
Sensitive detection parts, the more vertical surfaces of its direction of growth, and heterojunction structure is built with ZnO material more, one side ZnO material is difficult to bear
Acid and alkali corrosion, adverse circumstances are not suitable for it.Its surface of the ultraviolet detector of NiO nano materials is additionally based on to touch with electrode portion tap
It is few, it also have impact on detector sensitivity and stability.
The AlGaN semiconductor material of another important making ultraviolet detector, it has superior physical chemistry special
Property, ripe Material growth technology and the direct band gap that day blind ultra-violet (UV) band can be covered, and make the reason of ultraviolet detector
Think material.But AlGaN films ultraviolet detector then has lasting photoconductive phenomenon, this causes the ultraviolet spy based on AlGaN
Device is surveyed after light irradiation is stopped, there is the longer response time, leverage its photoresponse time.
Therefore, based on one-dimensional NiO nanomaterials and AlGaN ultraviolet detectors performance all up for further improving, mesh
It is preceding not yet to be had been reported that for the ultraviolet detector based on nano NiO/AlGaN heterojunction structures.
The content of the invention
It is an object of the invention to provide a kind of preparation technology is simple, cost is low, stable performance and high sensitivity based on
The inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures.The present invention structure sheaf be with
Sapphire Substrate growth AlGaN films are n-layer, and it uses low-pressure MOCVD method to grow, and using sapphire as substrate, AlN is height
Warm cushion, with trimethyl gallium (TMGa) and trimethyl aluminium (TMAl) for gallium source and Al sources, N sources, n-type dopant are used as using NH3
Using SiH4, wherein AlGaN epitaxy layer thickness is 500nm.The NiO flaky nanometer structures layer of the present invention be then using nickel nitrate and
Hexamethylenetetramine is raw material, then uses water at low temperature again in AlGaN superficial growth NiO inculating crystal layers using low-temperature aqueous solution first
Hot method grows NiO flaky nanometer structures.AlGaN film surfaces are finally grown into NiO flaky nanometer structures and there is 0.1cm ditches
Road is simultaneously coated with the glass substrate of ito transparent electrode and fitted, and constructs simple ultraviolet light response device.
First, inversion type rapid ultraviolet photoresponse device (the following letter based on nano NiO/AlGaN heterojunction structures of the invention
Referred to as ultraviolet light response device), including basalis, nano NiO/AlGaN hetero structure layers and transparent electrode layer.Wherein, substrate
Layer is Sapphire Substrate；It is thin that nano NiO/AlGaN hetero structure layers include the AlN high temperature buffer layer adjacent with basalis, AlGaN
Film layer, NiO inculating crystal layers and nano NiO laminated structure layer；Transparent contact electrode layer is by the ITO conduction glass with 0.1cm raceway grooves
Glass forms.In the nano NiO/AlGaN hetero structure layers, heterojunction structure is the nano NiO sheet in the growth of AlGaN film surfaces
Structure sheaf, other AlN high temperature buffer layers and NiO inculating crystal layers are the auxiliary layers that preparation procedure needs.
2nd, the preparation method of above-mentioned ultraviolet light response device is specific as follows：
1. using low pressure organic chemical vapor deposition method (MOCVD), and used in equipment equipped with reflection monitor in situ
To monitor film growth rates.Growth course is as follows：, as substrate, reaction chamber temperature is raised first using (0001) crystal orientation sapphire
To 1200 DEG C, hydrogen treat is passed through 10 minutes, to remove surface contamination.Reaction chamber temperature is then down to 900 DEG C, given birth to successively
Long AlN high temperature buffer layers, thickness 200nm, and n-AlGaN film layers, its thickness are 500nm.With trimethyl gallium (TMGa) and
Trimethyl aluminium (TMAl) is gallium source and silicon source, with NH3As nitrogen source, n-type dopant uses silane (SiH4), growth temperature is
1000℃.
2. 50mM nickel acetates are dissolved in into ethanol, seed crystal solution is made；The n-AlGaN substrates of growth are placed on spin coater,
The seed crystal solution prepared is dripped in surface, 5 minutes is stood according to 2500 revs/min of rotating speeds and carries out spin coatings, spin-coating time 5min,
The substrate that growth has seed crystal is then placed in quick warm table, it is then naturally cold after quickly being heated 15 minutes under the conditions of 200 DEG C
But room temperature is arrived；
3. 0.85g nickel nitrates and 0.70g hexamethylenetetramines are dissolved in into 100ml water, quickly stir, it is molten that reaction is made
Liquid；
4. the n-AlGaN film linings egative film that 2. step is grown NiO inculating crystal layers immerses step 3. in mixed solution, in 90
DEG C thermotonus 5 hours, reaction terminate to take out the n-AlGaN film linings for having NiO flaky nanometer structure layers in the growth of NiO inculating crystal layers
Egative film, and be washed with water, dry；
5. with 0.1cm raceway grooves and the glass substrate of ito transparent electrode will be coated with, step 4. gained NiO nanometer sheets are affixed on
Shape structure layer surface, and fixed.
The present invention has the following advantages that compared with prior art：
1st, product of the invention has extraordinary photoresponse to ultraviolet light (UV-A wave bands).
2nd, preparation method of the invention does not need catalyst, and growth temperature is low, reproducible, simple to operate, manufacturing cost
It is low.
Brief description of the drawings
Fig. 1 is ultraviolet light response device architecture of the present invention and test schematic diagram；
Fig. 2 is low to be grown in the NiO flaky nanometer structure ESEMs of n-AlGaN film surfaces in embodiment of the present invention
Times shape appearance figure；
Fig. 3 is the NiO flaky nanometer structures ESEM height that n-AlGaN film surfaces are grown in embodiment of the present invention
Times shape appearance figure；
Fig. 4 is the inversion type rapid ultraviolet photoresponse that nano NiO/AlGaN heterojunction structures are based in embodiment of the present invention
I-V curve figure under device dark-state and ultraviolet lighting；
Fig. 5 is the inversion type rapid ultraviolet photoresponse that nano NiO/AlGaN heterojunction structures are based in embodiment of the present invention
Electric current is with spectral response figure under device illumination；
Fig. 6 is the inversion type rapid ultraviolet photoresponse that nano NiO/AlGaN heterojunction structures are based in embodiment of the present invention
Electric current changes over time figure under device illumination；
Fig. 7 is that ultraviolet light response device current changes over time signal period figure in the embodiment of the present invention；
Fig. 8 is that ultraviolet light response device current rises figure with uviol lamp firing current in the embodiment of the present invention；
Fig. 9 is that ultraviolet light response device current closes electric current decline figure with uviol lamp in the embodiment of the present invention.
To the explanation of accompanying drawing above
It is based on from Fig. 1 in nano NiO/AlGaN heterojunction structure ultraviolet light response device architectures and test model schematic diagram, can
To find out that simple be provided between Sapphire Substrate 1 and the evaporation transparent contact electrode 6 of glass surface 7 of the device architecture is based on
NiO/AlGaN hetero structure layers.Wherein, transparent contact electrode is the ITO electro-conductive glass for being carved with 0.1cm raceway grooves；Based on NiO/
AlGaN hetero structure layers are from top to bottom AlN cushions 2 successively, AlGaN epitaxial layers 3, NiO inculating crystal layers 4, are grown on NiO seed crystals
The NiO nano-sheets layer 5 of layer surface.The photoresponse mechanism for testing being connected to form by 3V power supplys 8 and ammeter 9 its two contact electrode
End is separately fixed on two transparent contact electrodes of sample.
From figures 2 and 3, it will be seen that n-AlGaN epitaxial films surface is uniformly coated by NiO nano-sheets.
From fig. 4, it can be seen that nano NiO/AlGaN ultraviolet detectors obtained by the embodiment of the present invention are to ultraviolet light
(365nm) has an extraordinary photoresponse, and under ultra violet lamp, its photoelectric current is significantly increased.
From fig. 5, it can be seen that nano NiO/AlGaN ultraviolet detectors obtained by the embodiment of the present invention are to ultraviolet region
UV-A wave bands (315-400nm) have extraordinary response characteristics to light, and photoelectric current is notable with the increase of applying bias
Increase.
From fig. 6, it can be seen that nano NiO/AlGaN ultraviolet detectors obtained by the embodiment of the present invention have well surely
Qualitative, photoelectric current periodically responds as the cycle switch of uviol lamp is presented.
From Fig. 7,8,9 as can be seen that nano NiO/AlGaN ultraviolet detectors obtained by embodiment of the present invention are at one
It is especially rapid to photocurrent response in test period, rising (uviol lamp unlatching) and decline (uviol lamp closing) mistake from amplification
Journey, which can be seen that device, has very fast ultraviolet response characteristic, and its photoelectric current rising and falling time is both less than 0.2 second.
Embodiment
Following non-limiting examples can make one of ordinary skill in the art be more fully understood the present invention, but not with
Any mode limits the present invention.
Test method described in following embodiments, it is conventional method unless otherwise specified；The reagent and material, such as
Without specified otherwise, commercially obtain.
Embodiment
First to utilize low pressure organic chemical vapor deposition method (MOCVD), equipped with reflectance spectrum monitor in situ, to right
Epitaxial growth speed is monitored.The substrate of epitaxial growth is the Sapphire Substrate of 2 inches (0001) crystal orientation.Growth course is such as
Under：Reaction chamber temperature is heated to 1200 DEG C first, and is passed through hydrogen, to remove the residual contamination of substrate surface.Then will
System temperature is down to 900 DEG C of growing AIN high temperature buffer layers successively, using TMAl as Al sources, with NH3As N sources.Chamber pressure
For 100 millibars.Wherein TMAl's and NH3Flow is respectively 20 ml/mins and 4500 ml/mins.Growth thickness is 200nm.With
N-AlGaN epitaxial layers are grown afterwards, and its thickness is 500nm.Using TMGa and TMAl as Ga sources and Al sources, with NH3As N sources, n-type is mixed
Miscellaneous dose uses SiH4, growth temperature is 1000 DEG C.Wherein TMAl's and TMGa flows be respectively 15 ml/mins and 10 ml/mins,
SiH4And NH3Flow is respectively 4 ml/mins and 2500 ml/mins.Chamber pressure is 200 millibars.Then by 50mM acetic acid
Nickel is dissolved in ethanol, and seed crystal solution is made；The n-AlGaN substrates of growth are placed on spin coater, seed crystal solution is dripped in surface, it is quiet
Put 5 minutes and carry out spin coating according to 2500 revs/min of rotating speeds, spin-coating time 5min, be then placed in the substrate that growth has seed crystal soon
Fast warm table, after quickly being heated 15 minutes under the conditions of 200 DEG C, then naturally cool to room temperature；By 0.85g nickel nitrates and
0.70g hexamethylenetetramines are dissolved in 100mL water, quickly stir, and mixed solution is made；To be that growth has seed crystal after heat treatment
N-AlGaN epitaxial wafer substrates, immerse close solution in, in 90 DEG C react 5 hours.Reaction terminates taking-up gained glass substrate and is used in combination
Water washing, dry.The ito glass of 0.1cm raceway grooves will be carved with, be affixed on gained NiO/AlGaN structural materials surface, and consolidated
Fixed, ultraviolet light response device between transparent contact electrode 6 is deposited in Sapphire Substrate 1 and glass surface 7 as shown in figure 1, be provided with
Based on NiO/AlGaN hetero structure layers.Wherein, transparent contact electrode is the ITO electro-conductive glass for being carved with 0.1cm raceway grooves；Based on
NiO/AlGaN hetero structure layers are from top to bottom AlN cushions 2 successively, n-AlGaN epitaxial layers 3, NiO inculating crystal layers 4, are grown on
The NiO nano-sheets layer 5 of NiO seed crystal surfaces.
Claims (4)
1. one kind is based on the inversion type rapid ultraviolet photoresponse device of nano NiO/AlGaN heterojunction structures, it is characterised in that:It is wrapped
Include process for sapphire-based bottom, nano NiO/AlGaN hetero structure layers and transparent electrode layer.
2. the inversion type rapid ultraviolet photoresponse device according to claim 1 based on nano NiO/AlGaN heterojunction structures,
It is characterized in that:Basalis is Sapphire Substrate；Nano NiO/AlGaN hetero structure layers include AlN high temperature buffer layers, n-
AlGaN film layers, NiO inculating crystal layers and nano NiO laminated structure layer；Transparent contact electrode layer is with 0.1cm raceway grooves and is coated with
The glass substrate layer of ito transparent electrode.
3. the inversion type ultraviolet light response device according to claim 1 based on nano NiO/AlGaN heterojunction structures, it is special
Sign is:In the nano NiO/AlGaN hetero structure layers, heterojunction structure is the nano NiO piece in the growth of n-AlGaN film surfaces
Shape structure sheaf.
4. the preparation method of the inversion type ultraviolet light response device based on nano NiO/AlGaN heterojunction structures of claim 1, its
It is characterised by：
1. low pressure organic chemical vapor deposition method is used, and equipped with reflection monitor in situ in equipment, with (0001) crystal orientation
Sapphire is substrate, and reaction chamber temperature is increased into 1200 DEG C first, is passed through hydrogen treat 10 minutes, then by reaction chamber temperature
900 DEG C are down to, successively growing AIN high temperature buffer layer, thickness is 200nm and n-AlGaN film layers, and its thickness is 500nm, with three
Methyl gallium (TMGa) and trimethyl aluminium (TMAl) are gallium source and silicon source, with NH3As nitrogen source, n-type dopant uses silane
(SiH4), growth temperature is 1000 DEG C；
2. 50mM nickel acetates are dissolved in into ethanol, seed crystal solution is made；The n-AlGaN substrates of growth are placed on spin coater, will be matched somebody with somebody
The seed crystal solution put is dripped in surface, is stood 5 minutes according to 2500 revs/min of rotating speeds and is carried out spin coatings, spin-coating time 5min, then
The substrate that growth has seed crystal is placed in quick warm table, after quickly being heated 15 minutes under the conditions of 200 DEG C, then naturally cooled to
Room temperature；
3. 0.85g nickel nitrates and 0.70g hexamethylenetetramines are dissolved in into 100mL water, quickly stir, reaction solution is made；
4. the n-AlGaN film linings egative film that 2. step is grown NiO inculating crystal layers immerses step 3. in mixed solution, in 90 DEG C of temperature
Degree reaction 5 hours, reaction terminate to take out the AlGaN film lining egative films for having NiO flaky nanometer structure layers in the growth of NiO inculating crystal layers,
And it is washed with water, dries；
5. with 0.1cm raceway grooves and the glass substrate of ito transparent electrode will be coated with, step 4. gained NiO nano-sheet knots are affixed on
Structure layer surface, and fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710802973.0A CN107799624A (en) | 2017-09-08 | 2017-09-08 | One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710802973.0A CN107799624A (en) | 2017-09-08 | 2017-09-08 | One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107799624A true CN107799624A (en) | 2018-03-13 |
Family
ID=61531788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710802973.0A Pending CN107799624A (en) | 2017-09-08 | 2017-09-08 | One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107799624A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493290A (en) * | 2018-04-28 | 2018-09-04 | 大连民族大学 | One kind is based on MgO nano materials/A surface gallium nitride structure ultraviolet light response devices and preparation method thereof |
| CN109166936A (en) * | 2018-08-09 | 2019-01-08 | 镇江镓芯光电科技有限公司 | A kind of high resistant AlGaN base photoconductive switching device and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133579A (en) * | 2001-07-21 | 2003-05-09 | Matto Sciencetech Co Ltd | Ultraviolet sensing element, manufacturing method therefor and ultraviolet sensing system |
| CN104009112A (en) * | 2014-06-18 | 2014-08-27 | 清华大学 | Nano-composite structure materials based on ZnO and NiO and preparing and application method of nano-composite structure materials |
| US20150287871A1 (en) * | 2012-11-05 | 2015-10-08 | University Of Florida Research Foundation, Inc. | Solution-processed ultraviolet light detector based on p-n junctions of metal oxides |
| CN205582956U (en) * | 2016-04-21 | 2016-09-14 | 常熟理工学院 | PIN structure ultraviolet photoelectric detector |
| CN106784124A (en) * | 2016-12-23 | 2017-05-31 | 浙江大学 | One kind is based on P NiO/N ZnO:Ultraviolet detector of Al heterojunction structures and preparation method thereof |
-
2017
- 2017-09-08 CN CN201710802973.0A patent/CN107799624A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133579A (en) * | 2001-07-21 | 2003-05-09 | Matto Sciencetech Co Ltd | Ultraviolet sensing element, manufacturing method therefor and ultraviolet sensing system |
| US20150287871A1 (en) * | 2012-11-05 | 2015-10-08 | University Of Florida Research Foundation, Inc. | Solution-processed ultraviolet light detector based on p-n junctions of metal oxides |
| CN104009112A (en) * | 2014-06-18 | 2014-08-27 | 清华大学 | Nano-composite structure materials based on ZnO and NiO and preparing and application method of nano-composite structure materials |
| CN205582956U (en) * | 2016-04-21 | 2016-09-14 | 常熟理工学院 | PIN structure ultraviolet photoelectric detector |
| CN106784124A (en) * | 2016-12-23 | 2017-05-31 | 浙江大学 | One kind is based on P NiO/N ZnO:Ultraviolet detector of Al heterojunction structures and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| LE THUY HOA: ""A highly sensitive UV sensor composed of 2D NiO nanosheets and 1D ZnO nanorods fabricated by a hydrothermal process"", 《SENSORS AND ACTUATORS A: PHYSICAL》 * |
| LIUAN LI: ""NiO/GaN heterojunction diode deposited through magnetron reactive sputtering"", 《JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493290A (en) * | 2018-04-28 | 2018-09-04 | 大连民族大学 | One kind is based on MgO nano materials/A surface gallium nitride structure ultraviolet light response devices and preparation method thereof |
| CN108493290B (en) * | 2018-04-28 | 2020-04-14 | 大连民族大学 | Ultraviolet light response device and preparation method thereof |
| CN109166936A (en) * | 2018-08-09 | 2019-01-08 | 镇江镓芯光电科技有限公司 | A kind of high resistant AlGaN base photoconductive switching device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Ultrahigh deep-UV sensitivity in graphene-gated β-Ga2O3 phototransistors | |
| Lee et al. | High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films | |
| Pavesi et al. | ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors | |
| de Melo et al. | Semi-transparent p-Cu2O/n-ZnO nanoscale-film heterojunctions for photodetection and photovoltaic applications | |
| Dutta et al. | Effect of sol concentration on the properties of ZnO thin films prepared by sol–gel technique | |
| Gu et al. | Effect of annealing temperature on the performance of photoconductive ultraviolet detectors based on ZnO thin films | |
| CN107819045B (en) | UV photodetector and preparation method thereof based on gallium oxide heterojunction structure | |
| Khayatian et al. | Diameter-controlled synthesis of ZnO nanorods on Fe-doped ZnO seed layer and enhanced photodetection performance | |
| CN100428502C (en) | Method for preparation of a-b orientated ZnO nanometer linear array | |
| Ma et al. | High-performance solar blind ultraviolet photodetector based on single crystal orientation Mg-alloyed Ga2O3 film grown by a nonequilibrium MOCVD scheme | |
| CN108767028B (en) | Flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure and preparation method thereof | |
| CN110416334A (en) | One kind being based on hetero-epitaxy Ga2O3The preparation method of film deep ultraviolet light electric explorer | |
| Chen et al. | Ta-doped Ga2O3 epitaxial films on porous p-GaN substrates: structure and self-powered solar-blind photodetectors | |
| CN109841703B (en) | All-inorganic perovskite photoelectric detector and preparation method thereof | |
| Yang et al. | Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing | |
| CN103077963A (en) | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode | |
| Tuzemen et al. | Structural and electrical properties of nitrogen-doped ZnO thin films | |
| Cao et al. | Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector | |
| CN107799624A (en) | One kind is based on the inversion type rapid ultraviolet photoresponse device and preparation method of nano NiO/AlGaN heterojunction structures | |
| Chabane et al. | Opto-capacitive study of n-ZnO/p-Si heterojunctions elaborated by reactive sputtering method: Solar cell applications | |
| CN103500776A (en) | Preparation method of silica-based CdZnTe film ultraviolet light detector | |
| CN110416333B (en) | Ultraviolet photoelectric detector and preparation method thereof | |
| Xu et al. | The dependence of the optical properties of ZnO nanorod arrays on their growth time | |
| CN110364582A (en) | One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof | |
| Water et al. | Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180313 |