CN107799445A - Pumping system for technological cavities of semiconductor - Google Patents

Pumping system for technological cavities of semiconductor Download PDF

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Publication number
CN107799445A
CN107799445A CN201711054254.1A CN201711054254A CN107799445A CN 107799445 A CN107799445 A CN 107799445A CN 201711054254 A CN201711054254 A CN 201711054254A CN 107799445 A CN107799445 A CN 107799445A
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CN
China
Prior art keywords
pump
pumps
pumping system
exhaust
channel
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CN201711054254.1A
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Chinese (zh)
Inventor
李国强
林宗贤
吴龙江
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Huaian Imaging Device Manufacturer Corp
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Huaian Imaging Device Manufacturer Corp
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Priority to CN201711054254.1A priority Critical patent/CN107799445A/en
Publication of CN107799445A publication Critical patent/CN107799445A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)

Abstract

This disclosure relates to a kind of pumping system for technological cavities of semiconductor, it includes:Two or more pumps, described two or more parallel connection of pumps configurations, and each pump includes inlet end and exhaust end, and the pump to the process cavity for being evacuated;Intake channel, wherein the inlet end of each in described two or more pumps is individually coupled by the intake channel with the process cavity;Exhaust channel, wherein the exhaust end of each in described two or more pumps is coupled to the exhaust channel;And with each corresponding cutoff device in described two or more pumps, corresponding intake channel or exhaust channel are turned off, wherein when any one in two or more described pumps breaks down, corresponding intake channel or exhaust channel are turned off, and other pumps are to technique chamber pumping.

Description

Pumping system for technological cavities of semiconductor
Technical field
This disclosure relates to the pumping system for pumping, it particularly relates to the pumping system for technological cavities of semiconductor.
Background technology
In semiconductor fabrication process, generally wafer is placed in process cavity and handled, for example, carry out film forming, etching, Cleaning etc..The various semiconductor technologies carried out in process cavity usually require process cavity and are maintained at certain gas pressure or certain In gas pressure range.In addition, during various semiconductor technologies are carried out, waste gas may be produced, in process cavity Wafer pollutes, and influences its performance.
Need to propose a kind of new technology to solve above-mentioned one or more problems of the prior art.
The content of the invention
One purpose of the disclosure is to provide a kind of improved pumping system for technological cavities of semiconductor.
According to an aspect of this disclosure, there is provided a kind of pumping system for technological cavities of semiconductor, it is characterised in that institute Stating pumping system includes:Two or more pumps, described two or more parallel connection of pumps configurations, and each pump includes air inlet End and exhaust end, the pump are used to be evacuated the process cavity;Intake channel, wherein in described two or more pumps The inlet end of each is individually coupled by the intake channel with the process cavity;Exhaust channel, wherein described two The exhaust end of each in individual or more pump is coupled to the exhaust channel;And with described two or more pumps In each corresponding cutoff device, corresponding intake channel or exhaust channel are turned off, wherein when two or more When any one in the individual pump breaks down, corresponding intake channel or exhaust channel are turned off, and other pumps pair Technique chamber pumping.
According to the disclosure embodiment, the pumping system also includes failure determination device, and the failure determines dress Put whether each for determining in described two or more pumps breaks down, and it is determined that in described two or more pumps One send alarm signal when breaking down.
According to the disclosure embodiment, in normal work, at the part in described two or more pumps In opening, and when pump breaks down, with the pump quantity identical pump automatic start to break down.
According to the disclosure embodiment, the pumping system also includes control device, the control device in response to The alarm signal and start one or more of described two or more pumps.
According to the disclosure embodiment, in normal work, described two or more pumps are in opening state State.
According to the disclosure embodiment, the cutoff device is anti-recoil mechanism, and the anti-recoil mechanism includes The valve corresponding with each pump, and the valve is closed when the corresponding pump breaks down.
According to the disclosure embodiment, when the pump breaks down, the pressure of the corresponding valve both sides Power difference changes, and the valve response is automatically turned on or closed in the pressure differential change of its both sides.
According to the disclosure embodiment, the failure determination device is in response in described two or more pumps The revolution electric current of one pump determines the pump and broken down less than predetermined threshold current.
According to the disclosure embodiment, the failure determination device is in response in described two or more pumps The rotating speed of one pump exceedes predetermined threshold rotation rate and determines the pump and break down.
According to the disclosure embodiment, each cutoff device is communicatively coupled with the failure determination device, And each cutoff device determines that the pump corresponding with the cutoff device is sent out in response to the failure determination device Give birth to failure and turn off corresponding intake channel or exhaust channel.
According to the disclosure embodiment, the cutoff device is arranged in the exhaust end of the pump, and described Corresponding exhaust channel is turned off when pump breaks down.
According to the disclosure embodiment, the pumping system also includes the purification dress coupled with the exhaust end of the pump Put, for purifying the gas from pump discharge.
According to the disclosure embodiment, the ratio between pump speed between any two in described two or more pumps For 1 to 1.4.
An advantage in accordance with an embodiment of the present disclosure is that it is possible to provide appropriate Ring for technological cavities of semiconductor Border.
Another advantage in accordance with an embodiment of the present disclosure is that it is possible to prevent the waste gas adverse current when pumping system breaks down Into technological cavities of semiconductor.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the further feature of the disclosure and its Advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description Release the principle of the disclosure.
Referring to the drawings, according to following detailed description, the disclosure can be more clearly understood, wherein:
Fig. 1 is the diagram for the pumping system for showing the exemplary embodiment according to the disclosure.
Fig. 2 is the diagram for the pumping system including two or more pumps for showing the exemplary embodiment according to the disclosure.
Fig. 3 A are the diagrams for the pumping system for showing the exemplary embodiment according to the disclosure.
Fig. 3 B are the diagrams of the signal stream for the pumping system for showing the exemplary embodiment according to the disclosure.
Fig. 4 is the exemplary embodiment for the cutoff device for showing the pumping system for the exemplary embodiment according to the disclosure Diagram.
Fig. 5 is the another exemplary implementation for the cutoff device for showing the pumping system for the exemplary embodiment according to the disclosure The diagram of example.
Pay attention to, in embodiments described below, be used in conjunction with same reference between different accompanying drawings sometimes Come the part for representing same section or there is identical function, and omit its repeat specification.In this manual, using similar mark Number and letter represent similar terms, therefore, once be defined in a certain Xiang Yi accompanying drawing, then in subsequent accompanying drawing do not need pair It is further discussed.
In order to make it easy to understand, position, size and scope of each structure shown in accompanying drawing etc. etc. does not indicate that reality sometimes Position, size and scope etc..Therefore, disclosed invention is not limited to position, size and scope disclosed in accompanying drawing etc. etc..
Embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to accompanying drawing.It should be noted that:Unless have in addition Body illustrates that the unlimited system of part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally Scope of disclosure.
The description only actually at least one exemplary embodiment is illustrative to be never used as to the disclosure below And its application or any restrictions that use.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable In the case of, the technology, method and apparatus should be considered as authorizing part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Fig. 1 is the diagram for showing the pumping system 1000 according to the exemplary embodiment of the disclosure.
As shown in figure 1, semiconductor technology is carried out in technological cavities of semiconductor 1100.Pumping system 1000 can include pump 1200.Pump 1200 is used to discharge gas from process cavity 1100, so as to help so that be maintained inside process cavity 1100 it is desired Pressure or pressure limit, and prevent that caused waste gas pollutes to wafer in semiconductor processes.Pump 1200 includes Inlet end 1320 and exhaust end 1340.In normal work, pump 1200 sucks gas from inlet end 1320, and by gas from row Discharge at gas end 1340.Pumping system 1000 also includes intake channel 1420 and exhaust channel 1440.One end coupling of intake channel 1420 The inlet end 1320 of pump 1200 is connected to, the other end is couple to process cavity 1100.One end of exhaust channel 1440 is couple to pump 1200 Exhaust end 1340.
According to the exemplary embodiment of the disclosure, in 1000 normal work of pumping system, the gas warp in process cavity 1100 Extracted out by pump 1200 by intake channel 1420, and be discharged via exhaust channel 1440.According to the exemplary implementation of the disclosure Example, pumping system 1000 can cause process cavity 1100 to be able to maintain that in desired pressure or pressure limit, and prevent from partly leading Caused waste gas pollutes to wafer during body technology, so as to be advantageous to entering for the semiconductor technology in process cavity 1100 OK.
However, when pump 1200 breaks down, pump 1200 is stopped or its pump speed reduces, and loses to process cavity 1100 It is evacuated power.This may cause the gas pressure in intake channel 1420 and exhaust channel 1440 to be higher than the pressure in process cavity 1100 Power, the waste gas adverse current in intake channel 1420 and exhaust channel 1440 is caused to enter in process cavity 1100.In addition, other factorses (for example, some exceptions occur in process cavity 1100) may also cause pump 1200 to be stopped so that intake channel 1420 and row The pressure of gas path 1440 is more than the pressure in process cavity 1100, the waste gas adverse current in intake channel 1420 and exhaust channel 1440 Into in process cavity 1100.
Because the waste gas to be discharged contains a large amount of impurity particles in intake channel 1420 and exhaust channel 1440, therefore, enter Waste gas adverse current in gas path 1420 and exhaust channel 1440 is when entering process cavity 1100, and these impurity particles may also can be with Waste gas adverse current enters process cavity 1100.This wafer being likely to result in process cavity 1100 is contaminated even to be scrapped.
Therefore, the disclosure further provides a kind of improved pumping system, to prevent waste gas adverse current from entering process cavity.
Fig. 2 is the pumping system 2000 including two or more pumps for showing the further embodiment according to the disclosure Diagram.
As shown in Fig. 2 semiconductor technology is carried out in technological cavities of semiconductor 2100.Pumping system 2000 can include two or More pumps 2201,2202,2203 are until 220N.Two or more pumps 2201,2202,2203 are up to 220N is respectively from technique Chamber 2100 discharges gas, so as to help to maintain the desired pressure or pressure limit inside process cavity 2100, and prevents half Caused waste gas pollutes to wafer during semiconductor process.
As shown in Fig. 2 two or more pumps 2201,2202,2203 are until each in 220N includes inlet end 2321st, 2322,2323 up to 232N and exhaust end 2341,2342,2343 are until 234N.In normal work, two or more Individual pump 2201,2202,2203 until 220N respectively from its corresponding inlet end 2321,2322,2323 until 232N suction gas, And from its corresponding exhaust end 2341,2342,2343 up to 234N discharges gas.
As shown in Fig. 2 pumping system 2000 is also included with two or more pumps 2201,2202,2203 until in 220N Each corresponding multiple intake channel 2421,2422,2423 is until 242N and multiple exhaust channels 2441,2442,2443 Until 244N.Each intake channel 2421,2422,2423 until 242N one end be couple to corresponding inlet end 2321,2322, 2323 until 232N, its other end are separately couple to process cavity 2100.Each exhaust channel 2441,2442,2443 is straight Corresponding exhaust end 2341,2342,2343 is couple to 244N one end until 234N.According to the exemplary implementation of the disclosure Example, two or more pumps 2201,2202,2203 until 220N respectively by corresponding multiple intake channels 2421,2422, 2423 until 242N is individually coupled to process cavity 2100, for being evacuated from process cavity 2100.
As shown in Fig. 2 pumping system 2000 is also included with two or more pumps 2201,2202,2203 until in 220N Each corresponding cutoff device 2501,2502,2503 is until 250N.Cutoff device 2501,2502,2503 is until 250N is used In in pump 2201,2202,2203 until when corresponding one or more breaks down in 220N by intake channel 2421,2422, 2423 until 242N or exhaust channel 2441,2442,2443 until the air inlet corresponding with the pump to break down in 244N Path or exhaust channel shut-off, so as to avoid waste gas and impurity particle adverse current from entering process cavity 2100.In order to obtain preferable pass Disconnected effect, cutoff device 2501,2502,2503 is until 250N is preferably that to be arranged in exhaust channel 2441,2442,2443 straight To 244N, for turning off corresponding exhaust channel 2441,2442,2443 until 244N.In certain embodiments, cutoff device 2501st, 2502,2503 until 250N can also be arranged in intake channel 2421,2422,2423 until 242N on, for closing Corresponding intake channel 2421,2422,2423 break until 242N.
In certain embodiments, cutoff device 2501,2502,2503 is until 250N can be configured as sensing pump 2201st, 2202,2203 until one or more of 220N break down and automatically by intake channel 2421,2422, 2423 until 242N or exhaust channel 2441,2442,2443 until corresponding with the one or more pumps to break down in 244N Intake channel or exhaust channel shut-off.In certain embodiments, cutoff device 2501,2502,2503 is until 250N can be by It is configured in response to receiving instruction pump 2201,2202,2203 until the control that corresponding one or more breaks down in 220N Signal processed and by intake channel 2421,2422,2423 until 242N or exhaust channel 2441,2442,2443 are until in 244N Intake channel or exhaust channel shut-off corresponding with the one or more pumps to break down.For example, event occurs in pump 2201,2202 During barrier, be arranged in cutoff device 2501,2502 on exhaust channel 2441,2442 can respectively by exhaust channel 2441, 2442 shut-offs.
In certain embodiments, in 2000 normal work of pumping system, pump 2201,2202,2203 is up to one in 220N It is partially in opening.In the case, when one or more of the pump in opening pump breaks down, with hair The corresponding one or more cutoff devices of one or more pumps of raw failure will corresponding one or more intake channels or One or more exhaust channel shut-offs.Meanwhile in one or more pumps in the state of closing down with the pump quantity that breaks down Identical pump automatic start, is evacuated from process cavity 2100.For example, one sharing six pumps in system, three are in running order, three Individual be in closes down state.It is corresponding with two pumps to break down when two pumps (for example, pump 2201,2202) break down Two cutoff devices (for example, cutoff device 2501,2502) by corresponding intake channel or exhaust channel (for example, exhaust is logical Road 2441,2442) turn off.Meanwhile two pump automatic starts in three pumps in the state of closing down, taken out from process cavity 2100 Gas.
In certain embodiments, in 2000 normal work of pumping system, pump 2201,2202,2203 is until 220N is in Opening, it is evacuated jointly from process cavity 2100.In the case, when one or more of the pump in opening pump is sent out , will be corresponding one or more with one or more cutoff devices that the one or more pumps to break down are corresponding during raw failure Intake channel or the shut-off of one or more exhaust channels.Meanwhile other pumps still keep being evacuated from process cavity 2100.For example, When two pumps (for example, pump 2201,2202) are broken down, the two cutoff device (examples corresponding with two pumps to break down Such as, cutoff device 2501,2502) corresponding intake channel or exhaust channel (for example, exhaust channel 2441,2442) can be closed It is disconnected.Meanwhile other pumps still keep being evacuated from process cavity 2100.
Should incorporation engineering practice properly select two or more pumps 2201,2202,2203 until 220N pump speed, So as to meet the demand of semiconductor technology carried out in process cavity 2100, while production cost was unlikely to It is high.In certain embodiments, in normal work, two or more pumps 2201,2202,2203 are until in unlatching in 220N The pump speed for the pump 1200 that the pump speed sum of all pumps of state is more than or equal in the embodiment shown in Fig. 1.In some embodiments In, two or more pumps 2201,2202,2203 are until 220N pump speed is chosen between any two of which pump The ratio between pump speed is within the specific limits.Preferably, two or more pumps 2201,2202,2203 are up to any two in 220N The ratio between pump speed between pump is 1 to 1.4.As described herein, term " pump speed " refers to what pump was extracted out within the unit interval The volume of gas.For example, as described herein, the unit of pump speed can be L/min.
Fig. 3 A are the diagrams for showing the pumping system 3000 according to the exemplary embodiment of the disclosure.Fig. 3 B are shown according to this The diagram of the signal stream of the pumping system of disclosed exemplary embodiment.
As shown in Figure 3A, semiconductor technology is carried out in technological cavities of semiconductor 3100.Pumping system 3000 can include pump 3201st, 3202 until 320N, intake channel 3421,3422 is until 342N, and exhaust channel 3441,3442 is until 344N, Yi Jiguan Disconnected device 3501,3502 is until 350N.Pump 3201,3202 until 320N respectively include inlet end 3321,3322 until 332N and Exhaust end 3341,3342 is until 334N.Intake channel 3421,3422 until 342N one end be respectively coupled to inlet end 3321, 3322 until 332N, its other end are separately couple to process cavity 3100.Exhaust channel 3441,3442 until 344N one End is respectively coupled to exhaust end 3341,3342 until 334N.Pump 3201,3202 until 320N respectively by intake channel 3421, 3422 until 342N is individually coupled to process cavity 3100, and is evacuated from process cavity 3100.
As shown in Figure 3A, cutoff device 3501,3502 until 350N respectively with two or more pumps 3201,3202 until 320N is corresponding, in pump 3201,3202 until by intake channel when corresponding one or more breaks down in 320N 3421st, 3422 until 342N or exhaust channel 3441,3442 until the air inlet corresponding with the pump to break down in 344N Path or exhaust channel shut-off, so as to avoid waste gas and impurity particle adverse current from entering process cavity 3100.In order to obtain preferable pass Disconnected effect, cutoff device 3501,3502 until 350N is preferably to be arranged in exhaust channel 3441,3442 until on 344N, For turning off corresponding exhaust channel 3441,3442 until 344N.In certain embodiments, cutoff device 3501,3502 until 350N can also be arranged in intake channel 3421,3422 until 342N on, for turn off corresponding intake channel 3421, 3422 until 342N.
In certain embodiments, pumping system 3000 can also include purifier 3600.Purifier 3600 can be used for Purify the waste gas discharged from process cavity 3100.Purifier 3600 can be with exhaust channel 3441,3442 until 344N one end Coupling, for until the gases discharged from process cavity 3100 of 320N purify, being then discharged out waste gas by pump 3201,3202. In some embodiments, purifier 3600 can be configured according to the demand of the semiconductor technology carried out in process cavity 3100.
In certain embodiments, pumping system 3000 can also include failure determination device 3700.Failure determination device 3700 Pump 3201,3202 can be determined until whether each in 320N breaks down.In certain embodiments, as shown in Figure 3 B, Failure determination device 3700 can detect pump 3201,3202 up to one or more operational factor (examples of each pump in 320N Such as, revolution electric current or rotating speed).In certain embodiments, failure determination device 3700 can be straight by the pump 3201,3202 detected To 320N operational factor compared with predetermined threshold value, and determine therefrom that whether corresponding pump breaks down.For example, In some embodiments, failure determination device 3700 can detect pump 3201,3202 until 320N in each pump revolution electric current, And by the revolution electric current detected compared with predetermined current threshold, if the revolution electric current detected is less than predetermined threshold It is worth electric current, it is determined that corresponding pump breaks down.In certain embodiments, failure determination device 3700 can detect pump 3201, 3202 up to the rotating speed of each pump in 320N, and by the rotating speed detected compared with predetermined rotary speed threshold value, if inspection The rotating speed measured is higher than predetermined threshold rotation rate, it is determined that corresponding pump breaks down.
In certain embodiments, failure determination device 3700 can also detect in pumping system 3000 with pump 3201,3202 Until the related other parameters of the operation conditions of each pump are (for example, intake channel 3421,3422 is until 342N or row in 320N Gas path 3441,3442 is up to the air pressure in 344N), and determine whether corresponding pump breaks down using the parameter. In other embodiments, failure determination device 3700 can also determine pump 3201,3202 until in 320N using other manner Whether each breaks down.
In certain embodiments, failure determination device 3700 determines pump 3201,3202 until one or more of 320N When breaking down, alarm signal can be sent to user and/or other devices.In certain embodiments, failure determination device 3700 can issue the user with alarm signal, allow users to learn pump 3201,3202 up to 320N failure situation, and enter And the pump to break down suitably can be repaired or changed.In certain embodiments, user can also be further The alarm signal is handled and/or stored for further analysis.In certain embodiments, as shown in Figure 3 B, failure determines Device 3700 can send alarm signal to control device 3800, and control device 3800 is carried out in response to the alarm signal Further processing.
In certain embodiments, pumping system 3000 can also include control device 3800.As shown in Figure 3 B, control device 3800 can receive the alarm signal sent by failure determination device 3700, and to pump 3201,3202 until 320N is controlled System.For example, in certain embodiments, in 3000 normal work of pumping system, pump 3201,3202 is at the part in 320N In opening, then control device 3800 can be in response to receiving the instruction one or more sent by failure determination device 3700 Alarm signal that individual pump breaks down and the pump quantity identical pump for starting and breaking down.For example, control device 3800 can be with The report to be broken down in response to receiving two pumps of instruction (for example, pump 3201,3202) sent by failure determination device 3700 Warn signal and start two pumps in state of closing down.
The cutoff device in pumping system is further described below.
Fig. 4 is the exemplary embodiment for the cutoff device for showing the pumping system for the exemplary embodiment according to the disclosure Diagram.
In the embodiment shown in fig. 4, pumping system include two pumps (i.e. pump 4201,4202) and corresponding thereto two Individual cutoff device (i.e. anti-recoil mechanism 4521,4522).But it will be understood by those skilled in the art that following description can be fitted correspondingly Include the situation of more pumps for pumping system.
As shown in figure 4, cutoff device can be anti-recoil mechanism.As shown in figure 4, anti-recoil mechanism 4521,4522 is distinguished It is arranged in exhaust channel 4441,4442.In other embodiments, anti-recoil mechanism 4521,4522 can also be arranged in In intake channel 4421,4422.As shown in figure 4, anti-recoil mechanism 4521,4522 includes valve 4541,4542.Pump 4201, During 4202 normal work, valve 4541,4542 is opened, so that corresponding exhaust channel 4441,4442 (or intake channel 4421st, it is 4422) open-minded;And one in pump 4201,4202 is when breaking down, in valve 4541,4542 corresponding one from It is dynamic to close, so that a corresponding shut-off in exhaust channel 4441,4442 (or intake channel 4421,4422).For example, in pump 4201 when being broken down, and valve 4541 is closed automatically, so that corresponding exhaust channel 4441 turns off.
In the embodiment shown in fig. 4, valve 4541,4542 to away from corresponding pump 4201,4202 exhaust end one Uniaxially open side.In other words, valve 4541,4542 is uniaxially opened to gas from the direction that process cavity 4100 is discharged, so as to Ensure that gas can be discharged by pump 4201,4202 from process cavity 4100.In normal work, pump 4201,4202 is from process cavity 4100 pumpings, and the gas of extraction is discharged by exhaust channel 4441,4442.Now, the close pump of valve 4541,4542 4201st, side of the air pressure of the side of 4202 exhaust end higher than the exhaust end of the remote pump 4201,4202 of valve 4541,4542 Air pressure, thus valve 4541,4542 to away from pump 4201,4202 exhaust end side open.And in pump 4201,4202 One the pump to break down normally can not be evacuated from process cavity 4100 when breaking down, now, corresponding exhaust channel 4441st, the air pressure in 4442 is of a relatively high, and the air pressure in process cavity 4100 is relatively low.This causes corresponding valve 4541st, the air pressure of the side of the exhaust end of 4542 remote pump 4201,4202 higher than valve 4541,4542 close pump 4201, The air pressure of the side of 4202 exhaust end, thus one-way cock 4541,4542 is closed, so as to prevent corresponding exhaust channel 4441st, the back flow of gas in 4442 enters process cavity 4100.
As described above, anti-recoil mechanism 4521,4522 automatically opens up in pump 4201,4202 normal work, so that phase The exhaust channel 4441,4442 or intake channel 4421,4422 answered are open-minded, and one in pump 4201,4202 breaks down Shi Zidong is closed, so that a corresponding shut-off in exhaust channel 4441,4442 or intake channel 4421,4422.In Fig. 4 institutes In the embodiment shown, anti-recoil mechanism 4521,4522 need not send control signal to be controlled by other devices.
Fig. 5 be the cutoff device that shows the pumping system for the exemplary embodiment according to the disclosure another is exemplary The diagram of embodiment.
In the embodiment shown in fig. 5, pumping system include two pumps (i.e. pump 5201,5202) and corresponding thereto two Individual cutoff device (i.e. cutoff device 5501,5502).But it will be understood by those skilled in the art that following description can be correspondingly applicable Include the situation of more pumps in pumping system.
As shown in figure 5, cutoff device 5501,5502 can incite somebody to action accordingly in response to the control signal that other devices are sent Exhaust channel 5441,5442 or intake channel 5421,5422 turn off, so as to prevent back flow of gas from entering process cavity 5100.Such as Fig. 5 Shown, cutoff device 5501,5502 is arranged in exhaust channel 5441,5442.In other embodiments, cutoff device 5501st, 5502 can also be arranged in intake channel 5421,5422.
In the embodiment shown in fig. 5, pumping system includes failure determination device 5700, and cutoff device 5501,5502 It is communicatively coupled with failure determination device 5700.As shown in figure 5, when failure determination device 5700 determines one in pump 5201,5202 It is individual when breaking down, can into cutoff device 5501,5502 corresponding one send control signal.Corresponding cutoff device rings Ying Yu receives the control signal, by a corresponding pass in exhaust channel 5441,5442 (or intake channel 5421,5422) It is disconnected.For example, when failure determination device 5700 determines that pump 5201 breaks down, control letter is sent to corresponding cutoff device 5501 Number.Cutoff device 5501 turns off corresponding exhaust channel 5441 in response to receiving the control signal.
As shown in figure 5, failure determination device 5700 can detect the one or more of each pump in pump 5201,5202 Operational factor (for example, revolution electric current or rotating speed) with determine in pump 5201,5202 each whether break down.It is alternative Ground, failure determination device 5700 can also detect the other ginsengs related to the operation conditions of each pump in pump 5201,5202 Number with determine in pump 5201,5202 each whether break down.
As used in this, word " exemplary " means " being used as example, example or explanation ", not as will be by " model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description Preferable or favourable.Moreover, the disclosure is not by above-mentioned technical field, background technology, the content of the invention or embodiment Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance Any small change caused by difference, environment influence and/or other factorses.Word " substantially " also allows by ghost effect, made an uproar Caused by sound and the other actual Considerations being likely to be present in actual implementation with perfect or preferable situation Between difference.
Foregoing description can indicate to be " connected " or " coupled " element or node or feature together.As used herein , unless otherwise expressly noted, " connection " means an element/node/feature with another element/node/feature in electricity Above, mechanically, in logic or otherwise it is directly connected (or direct communication).Similarly, unless otherwise expressly noted, " coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine On tool, electrically, in logic or otherwise link to allow to interact, even if the two features may be not direct Connection is also such.That is, " coupling " is intended to encompass the direct link of element or further feature and linked indirectly, including profit With the connection of one or more intermediary elements.
It should also be understood that the word of "comprises/comprising" one is as used herein, illustrate pointed feature, entirety, step be present Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or the one or more of the other feature of increase, entirety, step, behaviour Work, unit and/or component and/or combinations thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the border between aforesaid operations is merely illustrative.Multiple operations Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings It should be counted as illustrative and not restrictive.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this area Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with A variety of modifications are carried out to embodiment without departing from the scope of the present disclosure and spirit.The scope of the present disclosure is limited by appended claims It is fixed.
According to an aspect of this disclosure, there is provided a kind of pumping system for technological cavities of semiconductor, it is characterised in that institute Stating pumping system includes:Two or more pumps, described two or more parallel connection of pumps configurations, and each pump includes air inlet End and exhaust end, the pump are used to be evacuated the process cavity;Intake channel, wherein in described two or more pumps The inlet end of each is individually coupled by the intake channel with the process cavity;Exhaust channel, wherein described two The exhaust end of each in individual or more pump is coupled to the exhaust channel;And with described two or more pumps In each corresponding cutoff device, corresponding intake channel or exhaust channel are turned off, wherein when two or more When any one in the individual pump breaks down, corresponding intake channel or exhaust channel are turned off, and other pumps pair Technique chamber pumping.
According to the disclosure embodiment, the pumping system also includes failure determination device, and the failure determines dress Put whether each for determining in described two or more pumps breaks down, and it is determined that in described two or more pumps One send alarm signal when breaking down.
According to the disclosure embodiment, in normal work, at the part in described two or more pumps In opening, and when pump breaks down, with the pump quantity identical pump automatic start to break down.
According to the disclosure embodiment, the pumping system also includes control device, the control device in response to The alarm signal and start one or more of described two or more pumps.
According to the disclosure embodiment, in normal work, described two or more pumps are in opening state State.
According to the disclosure embodiment, the cutoff device is anti-recoil mechanism, and the anti-recoil mechanism includes The valve corresponding with each pump, and the valve is closed when the corresponding pump breaks down.
According to the disclosure embodiment, when the pump breaks down, the pressure of the corresponding valve both sides Power difference changes, and the valve response is automatically turned on or closed in the pressure differential change of its both sides.
According to the disclosure embodiment, the failure determination device is in response in described two or more pumps The revolution electric current of one pump determines the pump and broken down less than predetermined threshold current.
According to the disclosure embodiment, the failure determination device is in response in described two or more pumps The rotating speed of one pump exceedes predetermined threshold rotation rate and determines the pump and break down.
According to the disclosure embodiment, each cutoff device is communicatively coupled with the failure determination device, And each cutoff device determines that the pump corresponding with the cutoff device is sent out in response to the failure determination device Give birth to failure and turn off corresponding intake channel or exhaust channel.
According to the disclosure embodiment, the cutoff device is arranged in the exhaust end of the pump, and described Corresponding exhaust channel is turned off when pump breaks down.
According to the disclosure embodiment, the pumping system also includes the purification dress coupled with the exhaust end of the pump Put, for purifying the gas from pump discharge.
According to the disclosure embodiment, the ratio between pump speed between any two in described two or more pumps For 1 to 1.4.

Claims (10)

1. a kind of pumping system for technological cavities of semiconductor, it is characterised in that the pumping system includes:
Two or more pumps, described two or more parallel connection of pumps configurations, and each pump includes inlet end and exhaust End, the pump are used to be evacuated the process cavity;
Intake channel, wherein the inlet end of each in described two or more pumps is independent by the intake channel Ground couples with the process cavity;
Exhaust channel, wherein the exhaust end of each in described two or more pumps is coupled to the exhaust channel; And
It is with each corresponding cutoff device in described two or more pumps, corresponding intake channel or exhaust is logical Road turns off,
It is wherein when any one in two or more described pumps breaks down, corresponding intake channel or exhaust is logical Road turns off, and other pumps are to technique chamber pumping.
2. pumping system according to claim 1, it is characterised in that the pumping system also includes failure determination device, described Failure determination device determine in described two or more pumps each whether break down, and it is determined that it is described two or One in more pumps sends alarm signal when breaking down.
3. pumping system according to claim 2, it is characterised in that in normal work, in described two or more pumps A part be in opening, and when pump breaks down, with the pump quantity identical pump automatic start to break down.
4. pumping system according to claim 3, it is characterised in that the pumping system also includes control device, the control Device starts one or more of described two or more pumps in response to the alarm signal.
5. pumping system according to claim 1, it is characterised in that in normal work, described two or more pumps are equal In opening.
6. pumping system according to claim 1, it is characterised in that the cutoff device is anti-recoil mechanism, the counnter attack Punch mechanism includes the valve corresponding with each pump, and the valve is closed when the corresponding pump breaks down.
7. pumping system according to claim 6, it is characterised in that when the pump breaks down, the corresponding valve The pressure differential of door both sides changes, and the valve response is automatically turned on or closed in the pressure differential change of its both sides.
8. pumping system according to claim 2, it is characterised in that the failure determination device is in response to described two or more The revolution electric current of a pump in multiple pumps determines the pump and broken down less than predetermined threshold current.
9. pumping system according to claim 2, it is characterised in that the failure determination device is in response to described two or more The rotating speed of a pump in multiple pumps exceedes predetermined threshold rotation rate and determines the pump and break down.
10. pumping system according to claim 2, it is characterised in that each cutoff device determines to fill with the failure Communicative couplings are put, and each cutoff device is corresponding with the cutoff device in response to failure determination device determination The pump break down and turn off corresponding intake channel or exhaust channel.
CN201711054254.1A 2017-11-01 2017-11-01 Pumping system for technological cavities of semiconductor Pending CN107799445A (en)

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Application Number Priority Date Filing Date Title
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102953958A (en) * 2012-12-03 2013-03-06 上海集成电路研发中心有限公司 Dual cryogenic pump system and control method thereof
CN103228914A (en) * 2010-12-22 2013-07-31 株式会社爱发科 Evacuation device, vacuum processing device, and evacuation method
CN107110162A (en) * 2015-01-06 2017-08-29 爱德华兹有限公司 Vacuum discharge system and the passage switching valve used in the vacuum discharge system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103228914A (en) * 2010-12-22 2013-07-31 株式会社爱发科 Evacuation device, vacuum processing device, and evacuation method
CN102953958A (en) * 2012-12-03 2013-03-06 上海集成电路研发中心有限公司 Dual cryogenic pump system and control method thereof
CN107110162A (en) * 2015-01-06 2017-08-29 爱德华兹有限公司 Vacuum discharge system and the passage switching valve used in the vacuum discharge system

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Application publication date: 20180313